JP7019837B2 - 選択的原子層堆積方法 - Google Patents
選択的原子層堆積方法 Download PDFInfo
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- JP7019837B2 JP7019837B2 JP2020555229A JP2020555229A JP7019837B2 JP 7019837 B2 JP7019837 B2 JP 7019837B2 JP 2020555229 A JP2020555229 A JP 2020555229A JP 2020555229 A JP2020555229 A JP 2020555229A JP 7019837 B2 JP7019837 B2 JP 7019837B2
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- 125000004429 atom Chemical group 0.000 claims description 6
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- MNWRORMXBIWXCI-UHFFFAOYSA-N tetrakis(dimethylamido)titanium Chemical compound CN(C)[Ti](N(C)C)(N(C)C)N(C)C MNWRORMXBIWXCI-UHFFFAOYSA-N 0.000 claims description 3
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/32—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers using masks
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C—CHEMISTRY; METALLURGY
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
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- C23C16/405—Oxides of refractory metals or yttrium
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C16/45534—Use of auxiliary reactants other than used for contributing to the composition of the main film, e.g. catalysts, activators or scavengers
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45553—Atomic layer deposition [ALD] characterized by the use of precursors specially adapted for ALD
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
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- H—ELECTRICITY
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Description
式中、qは化学吸着の量、tは時間、αは化学吸着の初期速度(mmol/g・分)、βは脱離定数(g/mmol)である。したがって、時間の関数としてのブロッキング層の被覆率は、漸近的な傾向に従う。結果として、ALD堆積の選択性は、通常、同様の傾向に従う(すなわち、被覆率が増加すると、選択性も増加する)。
Claims (15)
- 選択的堆積方法であって、
基板に第1の表面と第2の表面とを提供すること;
該基板をブロッキング化合物に曝露して、第2の表面と比して第1の表面の少なくとも一部にブロッキング層を選択的に形成すること;及び
基板を金属前駆体及び反応物質に順次曝露して、ブロッキング層又は第1の表面と比して第2の表面に金属含有層を選択的に形成することであって、金属前駆体が、約21オングストローム以上の動的直径を有する、形成すること
を含む、方法。 - 第1の表面が導電性材料を含み、第2の表面が誘電体材料を含む、請求項1に記載の方法。
- ブロッキング化合物が、反応性ヘッド基及び炭素質テール基を有するブロッキング分子を含み、反応性ヘッド基が、(HO)2OP-、HS-、及びH3Si-からなる群より選択される、請求項2に記載の方法。
- 第1の表面が誘電体材料を含み、第2の表面が導電性材料を含む、請求項1に記載の方法。
- ブロッキング化合物が、反応性ヘッド基及び炭素質テール基を有するブロッキング分子を含み、反応性ヘッド基が、(R2N)3Si-、X3Si-、及び(RO)3Si-からなる群より選択され、ここで、各Rは、独立して、C1-C6アルキル、C1-C6シクロアルキル、及びC1-C6アリールから選択され、各Xは、独立してハロゲンから選択される、請求項4に記載の方法。
- 金属前駆体が第3周期金属を含み、金属前駆体が22オングストローム以上の動的直径を有する、請求項1に記載の方法。
- 金属前駆体が第4周期金属を含み、金属前駆体が24オングストローム以上の動的直径を有する、請求項1に記載の方法。
- 金属前駆体が第5周期金属を含み、金属前駆体が26オングストローム以上の動的直径を有する、請求項1に記載の方法。
- 金属前駆体が第6周期金属を含み、金属前駆体が28オングストローム以上の動的直径を有する、請求項1に記載の方法。
- 金属前駆体が、Al、Hf、Zr、Y、Ti、Ta、Si、Cu、Co、W、又はRuのうちの1つ以上を含む、請求項1に記載の方法。
- 金属前駆体が、トリ-tertブチルアルミニウム又はトリネオペンチルアルミニウムのうちの1つ以上を含む、請求項1に記載の方法。
- 金属前駆体が、テトラキス(ジメチルアミド)チタン又はテトラキス(ジエチルアミド)チタンのうちの1つ以上を含む、請求項1に記載の方法。
- 金属含有層が、金属原子と、酸素原子、窒素原子、炭素原子、又はそれらの組合せとを含む、請求項1に記載の方法。
- 金属含有層が純粋な金属膜を含む、請求項1に記載の方法。
- ブロッキング層で覆われた第1の表面の部分が、第1の表面の約90%以上である、請求項1に記載の方法。
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US11738366B2 (en) * | 2019-01-25 | 2023-08-29 | The Regents Of The University Of California | Method of coating an object |
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US11286556B2 (en) * | 2020-04-14 | 2022-03-29 | Applied Materials, Inc. | Selective deposition of titanium films |
US11621161B2 (en) | 2020-10-27 | 2023-04-04 | Applied Materials, Inc. | Selective deposition of a passivation film on a metal surface |
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US10580644B2 (en) * | 2016-07-11 | 2020-03-03 | Tokyo Electron Limited | Method and apparatus for selective film deposition using a cyclic treatment |
US10068764B2 (en) * | 2016-09-13 | 2018-09-04 | Tokyo Electron Limited | Selective metal oxide deposition using a self-assembled monolayer surface pretreatment |
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