JP7279024B2 - 化学エッチングによる選択的堆積の欠陥除去 - Google Patents
化学エッチングによる選択的堆積の欠陥除去 Download PDFInfo
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- JP7279024B2 JP7279024B2 JP2020515725A JP2020515725A JP7279024B2 JP 7279024 B2 JP7279024 B2 JP 7279024B2 JP 2020515725 A JP2020515725 A JP 2020515725A JP 2020515725 A JP2020515725 A JP 2020515725A JP 7279024 B2 JP7279024 B2 JP 7279024B2
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
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- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02334—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment in-situ cleaning after layer formation, e.g. removing process residues
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- H01L21/02107—Forming insulating materials on a substrate
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- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
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- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
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- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
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- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/32—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers using masks
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- Engineering & Computer Science (AREA)
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- Condensed Matter Physics & Semiconductors (AREA)
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- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Inorganic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Vapour Deposition (AREA)
- Formation Of Insulating Films (AREA)
- Weting (AREA)
- Drying Of Semiconductors (AREA)
Description
いくつかの実施形態では、連結基は分岐していてもよい。いくつかの実施形態では、連結基は置換されていてもよい。いくつかの実施形態では、連結基は不飽和であってもよい。いくつかの実施形態では、連結基は、シクロアルキル基またはアリール基を含んでもよい。
Claims (14)
- 半導体デバイスを製造するために、自己組織化単層を使用して金属酸化物を選択的に堆積する方法であって、
第1の表面を有する第1の材料と、第2の表面を有する第2の材料とを有する、基板を提供すること、
前記第2の表面に対して前記第1の表面上に選択的にブロッキング層を堆積させるために、少なくとも1つのブロッキング分子を含むブロッキング化合物に、前記基板を曝露すること、
前記第1の表面に対して前記第2の表面上に選択的に金属酸化物層を形成すると共に、前記金属酸化物層を含む金属酸化物欠陥を、前記第1の表面上に生成すること、および
前記第1の表面上の前記ブロッキング層から、前記金属酸化物欠陥を除去すること
を含む、方法。 - 前記第1の表面から前記金属酸化物欠陥を除去することが、前記基板を所定の時間、金属-ハロゲン前駆体に曝露することを含む、請求項1に記載の方法。
- 前記金属-ハロゲン前駆体が、WClx、HfClx、NbClx、またはRuClxのうちの1つ以上を含み、xは1から6である、請求項2に記載の方法。
- 前記金属-ハロゲン前駆体が金属オキシハロゲン化物を含む、請求項2に記載の方法。
- 前記金属-ハロゲン前駆体が実質的にフッ素原子を含まない、請求項2に記載の方法。
- 前記金属酸化物欠陥を除去することが熱処理を含む、請求項2に記載の方法。
- 前記第1の材料が金属酸化物または誘電体材料を含み、前記第2の材料が金属またはシリコンを含む、請求項1に記載の方法。
- 前記第1の材料が本質的に酸化ケイ素からなる、請求項6に記載の方法。
- 前記第2の材料が金属酸化物または誘電体材料を含み、前記第1の材料が金属またはシリコンを含む、請求項1に記載の方法。
- 前記第2の表面が本質的に酸化ケイ素からなる、請求項8に記載の方法。
- 前記金属酸化物層が、エッチング停止層またはマスク層である、請求項1に記載の方法。
- 前記ブロッキング分子が1つよりも多い反応性部分を含む、請求項1に記載の方法。
- 前記反応性部分が、直鎖状または分岐状に配置される、請求項12に記載の方法。
- 前記ブロッキング化合物が、少なくとも2つの異なるブロッキング分子を含む、請求項1に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201762557734P | 2017-09-12 | 2017-09-12 | |
US62/557,734 | 2017-09-12 | ||
PCT/US2018/050655 WO2019055508A1 (en) | 2017-09-12 | 2018-09-12 | SELECTIVE REMOVAL OF CHEMICAL ENGRAVING DEPOSITION DEFECTS |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2020533808A JP2020533808A (ja) | 2020-11-19 |
JP7279024B2 true JP7279024B2 (ja) | 2023-05-22 |
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US11319449B2 (en) * | 2019-12-20 | 2022-05-03 | L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude | Area selective deposition of metal containing films |
JP7227122B2 (ja) | 2019-12-27 | 2023-02-21 | 株式会社Kokusai Electric | 基板処理方法、半導体装置の製造方法、基板処理装置、およびプログラム |
JP7072012B2 (ja) | 2020-02-27 | 2022-05-19 | 株式会社Kokusai Electric | 基板処理方法、半導体装置の製造方法、基板処理装置、及びプログラム |
JP7204718B2 (ja) * | 2020-09-29 | 2023-01-16 | 株式会社Kokusai Electric | 半導体装置の製造方法、基板処理方法、基板処理装置、およびプログラム |
US11810817B2 (en) * | 2020-10-14 | 2023-11-07 | Taiwan Semiconductor Manufacturing Co., Ltd. | In-situ CMP self-assembled monolayer for enhancing metal-dielectric adhesion and preventing metal diffusion |
JP2022091523A (ja) * | 2020-12-09 | 2022-06-21 | 東京エレクトロン株式会社 | 成膜方法 |
JP2023117045A (ja) * | 2022-02-10 | 2023-08-23 | 東京エレクトロン株式会社 | 基板処理方法 |
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KR20200041829A (ko) | 2020-04-22 |
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US20190080904A1 (en) | 2019-03-14 |
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