TWI865682B - 作為犧牲覆蓋層的自組裝單層 - Google Patents

作為犧牲覆蓋層的自組裝單層 Download PDF

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TWI865682B
TWI865682B TW109143590A TW109143590A TWI865682B TW I865682 B TWI865682 B TW I865682B TW 109143590 A TW109143590 A TW 109143590A TW 109143590 A TW109143590 A TW 109143590A TW I865682 B TWI865682 B TW I865682B
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Taiwan
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substrate
metal surface
group
processing method
sacrificial
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TW109143590A
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Chinese (zh)
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TW202135135A (zh
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阿伊諾阿 羅莫 尼格雷亞
河野有美子
蒂娜 特里優索
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日商東京威力科創股份有限公司
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/61—Formation of materials, e.g. in the shape of layers or pillars of insulating materials using masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/074—Manufacture or treatment of dielectric parts thereof of dielectric parts comprising thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
    • H10W20/077—Manufacture or treatment of dielectric parts thereof of dielectric parts comprising thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers on sidewalls or on top surfaces of conductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6342—Liquid deposition, e.g. spin-coating, sol-gel techniques or spray coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6502—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials
    • H10P14/6504—In-situ cleaning
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/69215—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7618—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating carrousel
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/056—Manufacture or treatment of conductive parts of the interconnections by filling conductive material into holes, grooves or trenches
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/074—Manufacture or treatment of dielectric parts thereof of dielectric parts comprising thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0448—Apparatus for applying a liquid, a resin, an ink or the like

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  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
TW109143590A 2019-12-10 2020-12-10 作為犧牲覆蓋層的自組裝單層 TWI865682B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201962946243P 2019-12-10 2019-12-10
US62/946,243 2019-12-10

Publications (2)

Publication Number Publication Date
TW202135135A TW202135135A (zh) 2021-09-16
TWI865682B true TWI865682B (zh) 2024-12-11

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TW109143590A TWI865682B (zh) 2019-12-10 2020-12-10 作為犧牲覆蓋層的自組裝單層

Country Status (6)

Country Link
US (1) US11915973B2 (https=)
JP (1) JP7627432B2 (https=)
KR (1) KR102889307B1 (https=)
CN (1) CN114830323B (https=)
TW (1) TWI865682B (https=)
WO (1) WO2021118993A1 (https=)

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JP2024523510A (ja) 2021-07-06 2024-06-28 東京エレクトロン株式会社 自己組織化単分子層を使用する選択的な膜形成
US11990369B2 (en) * 2021-08-20 2024-05-21 Applied Materials, Inc. Selective patterning with molecular layer deposition
JP2023182324A (ja) * 2022-06-14 2023-12-26 東京エレクトロン株式会社 成膜方法及び成膜装置
JP2024049188A (ja) * 2022-09-28 2024-04-09 東京エレクトロン株式会社 膜形成方法及び基板処理装置
JP2024081396A (ja) * 2022-12-06 2024-06-18 東京エレクトロン株式会社 成膜方法及び成膜装置
US12604685B2 (en) * 2023-07-19 2026-04-14 Tokyo Electron Limited Methods for controlling spin-on self-assembled monolayer (SAM) selectivity
JP2025087989A (ja) * 2023-11-30 2025-06-11 東京エレクトロン株式会社 成膜方法及び成膜装置
US20260053045A1 (en) * 2024-08-16 2026-02-19 Applied Materials, Inc. Integrated encapsulation deposition with metal recovery and passivation

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US20180218914A1 (en) * 2017-01-31 2018-08-02 Applied Materials, Inc. Schemes for Selective Deposition for Patterning Applications
US20180294157A1 (en) * 2017-04-07 2018-10-11 Applied Materials, Inc. Treatment approach to improve film roughness by improving nucleation/adhesion of silicon oxide

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US20180294157A1 (en) * 2017-04-07 2018-10-11 Applied Materials, Inc. Treatment approach to improve film roughness by improving nucleation/adhesion of silicon oxide

Also Published As

Publication number Publication date
JP2023505992A (ja) 2023-02-14
TW202135135A (zh) 2021-09-16
CN114830323B (zh) 2026-03-20
CN114830323A (zh) 2022-07-29
WO2021118993A1 (en) 2021-06-17
US20210175118A1 (en) 2021-06-10
US11915973B2 (en) 2024-02-27
KR20220113444A (ko) 2022-08-12
JP7627432B2 (ja) 2025-02-06
KR102889307B1 (ko) 2025-11-20

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