JP6315694B2 - 半導体装置の製造方法、ならびに皮膜の形成方法および形成装置 - Google Patents
半導体装置の製造方法、ならびに皮膜の形成方法および形成装置 Download PDFInfo
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- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
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- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
- H01L21/76814—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics post-treatment or after-treatment, e.g. cleaning or removal of oxides on underlying conductors
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- H01L21/76822—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc.
- H01L21/76826—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc. by contacting the layer with gases, liquids or plasmas
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Description
図1は本発明の一実施形態に係る半導体装置の製造方法を示すフローチャート、図2はその主要部の工程断面図である。
次に、上記本発明の一実施形態に係る半導体装置の製造方法に好適な処理システムについて説明する。図3は本発明の一実施形態に係る半導体装置の製造方法に好適な処理システムを示す概略図である。
(第1の例)
図4は、皮膜形成装置21cの第1の例を示す断面図である。ここでは、枚様式の装置を例にとって説明する。
図5は、皮膜形成装置21cの第2の例を示す断面図である。ここでは、バッチ式の装置を例にとって説明する。
次に、本発明の効果を実験によって確認した結果について説明する。
ここでは、現象を単純化するために、Siの上にブランケットのLow−k膜を形成したサンプルにて実験を実施した。Low−k膜としてはSiOC系のものを用いた。実験は、図6に示すスキームにより行った。
なお、本発明は上記実施形態に限定されることなく種々変形可能である。例えば、上記実施形態では、エッチング後またはアッシング後に皮膜を形成し、その後にウエット洗浄により皮膜を除去したが、除去の手法はウエット洗浄に限るものではない。また、層間絶縁膜としてSiOCやSiOF等のSi含有Low−k膜を主たる例として示したが、SiO 2 膜等のSiを含有する他の層間絶縁膜であっても適用可能である。
2;処理部
3;搬入出部
4;制御部
21a;エッチング装置
21b;アッシング装置
21c;皮膜形成装置
22;真空搬送室
24;第1の搬送機構
102;層間絶縁膜
103;ハードマスク層
104;トレンチ
105;エッチング残渣
106;皮膜
W;半導体ウエハ
Claims (19)
- 層間絶縁膜を有する被処理基板を準備する工程と、
層間絶縁膜にマスク層を介してドライエッチングを施し、凹部を形成する工程と、
ドライエッチング後、前記層間絶縁膜の表面と反応して結合する第1の置換基と、親水性である第2の置換基とを、それぞれ一方の末端および他方の末端に有する分子構造の皮膜用化合物ガスを用いたガス処理により全面に皮膜を形成する工程と、
前記皮膜を除去する工程と、
前記凹部内に配線を形成する工程と
を有し、
前記層間絶縁膜はSiを含有し、前記皮膜用化合物の前記第1の置換基は、前記層間絶縁膜のSiと結合することを特徴とする半導体装置の製造方法。 - 前記層間絶縁膜はSi含有Low−k膜であることを特徴とする請求項1に記載の半導体装置の製造方法。
- 前記皮膜用化合物の前記第1の置換基はアルコキシシリル基であり、アルコキシシリル基が前記層間絶縁膜のSi−OHと反応してシロキサン結合を形成することを特徴とする請求項1または請求項2に記載の半導体装置の製造方法。
- 前記皮膜用化合物の前記第2の置換基はアミノ基であることを特徴とする請求項3に記載の半導体装置の製造方法。
- 前記皮膜用化合物は、N−フェニル−3−アミノプロピルトリメトキシシラン、(N−(2−アミノエチル)−3−アミノプロピルトリメトキシシラン、3−アミノプロピルトリメトキシシラン、3−アミノプロピルトリエトキシシランのいずれかであることを特徴とする請求項4に記載の半導体装置の製造方法。
- 前記ドライエッチングはプラズマエッチングであることを特徴とする請求項1から請求項5のいずれか1項に記載の半導体装置の製造方法。
- 前記ドライエッチング後の被処理基板にドライアッシングを施す工程をさらに有し、前記皮膜を形成する工程は、前記ドライアッシング後に行われることを特徴とする請求項1から請求項6のいずれか1項に記載の半導体装置の製造方法。
- 前記ドライアッシングはプラズマアッシングであることを特徴とする請求項7に記載の半導体装置の製造方法。
- 前記皮膜を除去する工程は、ウエット洗浄により行われることを特徴とする請求項1から請求項8のいずれか1項に記載の半導体装置の製造方法。
- 層間絶縁膜を有する被処理基板において、前記層間絶縁膜に配線形成のための凹部を形成するドライエッチングを施した後、またはその後さらにドライアッシングを施した後に、前記層間絶縁膜を保護するための皮膜を、その後の工程で除去可能に形成する皮膜の形成方法であって、
前記層間絶縁膜の表面と反応して結合する第1の置換基と、親水性である第2の置換基とを、それぞれ一方の末端および他方の末端に有する分子構造の皮膜用化合物ガスを用いたガス処理により前記層間絶縁膜により皮膜を形成し、
前記層間絶縁膜はSiを含有し、前記皮膜用化合物の前記第1の置換基は、前記層間絶縁膜のSiと結合することを特徴とする皮膜の形成方法。 - 前記層間絶縁膜はSi含有Low−k膜であることを特徴とする請求項10に記載の皮膜の形成方法。
- 前記皮膜用化合物の前記第1の置換基はアルコキシシリル基であり、アルコキシシリル基が前記層間絶縁膜のSi−OHと反応してシロキサン結合を形成することを特徴とする請求項10または請求項11に記載の皮膜の形成方法。
- 前記皮膜用化合物の前記第2の置換基はアミノ基であることを特徴とする請求項12に記載の皮膜の形成方法。
- 前記皮膜用化合物は、N−フェニル−3−アミノプロピルトリメトキシシラン、(N−(2−アミノエチル)−3−アミノプロピルトリメトキシシラン、3−アミノプロピルトリメトキシシラン、3−アミノプロピルトリエトキシシランのいずれかであることを特徴とする請求項13に記載の皮膜の形成方法。
- 層間絶縁膜を有する被処理基板において、前記層間絶縁膜に配線形成のための凹部を形成するドライエッチングを施した後、またはその後さらにドライアッシングを施した後に、前記層間絶縁膜を保護するための皮膜を、その後の工程で除去可能に形成する皮膜の形成装置であって、
前記層間絶縁膜に配線形成のための凹部を形成するドライエッチングを施した後の被処理基板を収容する処理容器と、
前記処理容器内を排気する排気手段と、
前記処理容器内を所定温度に加熱する加熱手段と、
前記処理容器内に、前記層間絶縁膜の表面と反応して結合する第1の置換基と、親水性である第2の置換基とを、それぞれ一方の末端および他方の末端に有する分子構造の皮膜用化合物ガスを供給するガス供給手段と
を有し、
前記層間絶縁膜はSiを含有し、前記皮膜用化合物の前記第1の置換基は、前記層間絶縁膜のSiと結合することを特徴とする皮膜の形成装置。 - 前記層間絶縁膜はSi含有Low−k膜であることを特徴とする請求項15に記載の皮膜の形成装置。
- 前記皮膜用化合物の前記第1の置換基はアルコキシシリル基であり、アルコキシシリル基が前記層間絶縁膜のSi−OHと反応してシロキサン結合を形成することを特徴とする請求項15または請求項16に記載の皮膜の形成装置。
- 前記皮膜用化合物の前記第2の置換基はアミノ基であることを特徴とする請求項17に記載の皮膜の形成装置。
- 前記皮膜用化合物は、N−フェニル−3−アミノプロピルトリメトキシシラン、(N−(2−アミノエチル)−3−アミノプロピルトリメトキシシラン、3−アミノプロピルトリメトキシシラン、3−アミノプロピルトリエトキシシランのいずれかであることを特徴とする請求項18に記載の皮膜の形成装置。
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