JP5425404B2 - アモルファスカーボン膜の処理方法およびそれを用いた半導体装置の製造方法 - Google Patents
アモルファスカーボン膜の処理方法およびそれを用いた半導体装置の製造方法 Download PDFInfo
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- JP5425404B2 JP5425404B2 JP2008009504A JP2008009504A JP5425404B2 JP 5425404 B2 JP5425404 B2 JP 5425404B2 JP 2008009504 A JP2008009504 A JP 2008009504A JP 2008009504 A JP2008009504 A JP 2008009504A JP 5425404 B2 JP5425404 B2 JP 5425404B2
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- amorphous carbon
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- 229910003481 amorphous carbon Inorganic materials 0.000 title claims description 95
- 238000000034 method Methods 0.000 title claims description 65
- 238000012545 processing Methods 0.000 title claims description 39
- 239000004065 semiconductor Substances 0.000 title claims description 26
- 238000004519 manufacturing process Methods 0.000 title claims description 12
- 230000008569 process Effects 0.000 claims description 47
- 239000010410 layer Substances 0.000 claims description 31
- 238000004140 cleaning Methods 0.000 claims description 22
- 230000004048 modification Effects 0.000 claims description 22
- 238000012986 modification Methods 0.000 claims description 22
- 239000011229 interlayer Substances 0.000 claims description 18
- 238000001312 dry etching Methods 0.000 claims description 12
- 239000000758 substrate Substances 0.000 claims description 10
- 230000004888 barrier function Effects 0.000 claims description 9
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 8
- 238000003860 storage Methods 0.000 claims description 8
- 229910052990 silicon hydride Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000007789 gas Substances 0.000 description 47
- 238000006884 silylation reaction Methods 0.000 description 20
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 15
- 239000010949 copper Substances 0.000 description 13
- 239000003795 chemical substances by application Substances 0.000 description 11
- 238000005530 etching Methods 0.000 description 11
- 238000003672 processing method Methods 0.000 description 7
- 238000004380 ashing Methods 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 6
- 230000007246 mechanism Effects 0.000 description 5
- KAKZBPTYRLMSJV-UHFFFAOYSA-N Butadiene Chemical compound C=CC=C KAKZBPTYRLMSJV-UHFFFAOYSA-N 0.000 description 4
- 239000004215 Carbon black (E152) Substances 0.000 description 4
- 229930195733 hydrocarbon Natural products 0.000 description 4
- 150000002430 hydrocarbons Chemical class 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 3
- KZFNONVXCZVHRD-UHFFFAOYSA-N dimethylamino(dimethyl)silicon Chemical compound CN(C)[Si](C)C KZFNONVXCZVHRD-UHFFFAOYSA-N 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- XNMQEEKYCVKGBD-UHFFFAOYSA-N 2-butyne Chemical compound CC#CC XNMQEEKYCVKGBD-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- XCOBLONWWXQEBS-KPKJPENVSA-N N,O-bis(trimethylsilyl)trifluoroacetamide Chemical compound C[Si](C)(C)O\C(C(F)(F)F)=N\[Si](C)(C)C XCOBLONWWXQEBS-KPKJPENVSA-N 0.000 description 2
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 2
- 229910018540 Si C Inorganic materials 0.000 description 2
- GJWAPAVRQYYSTK-UHFFFAOYSA-N [(dimethyl-$l^{3}-silanyl)amino]-dimethylsilicon Chemical compound C[Si](C)N[Si](C)C GJWAPAVRQYYSTK-UHFFFAOYSA-N 0.000 description 2
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- KAHVZNKZQFSBFW-UHFFFAOYSA-N n-methyl-n-trimethylsilylmethanamine Chemical compound CN(C)[Si](C)(C)C KAHVZNKZQFSBFW-UHFFFAOYSA-N 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 230000009257 reactivity Effects 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 239000006200 vaporizer Substances 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 1
- 229910003849 O-Si Inorganic materials 0.000 description 1
- 229910003872 O—Si Inorganic materials 0.000 description 1
- 229910007991 Si-N Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910006294 Si—N Inorganic materials 0.000 description 1
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000001273 butane Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- NEXSMEBSBIABKL-UHFFFAOYSA-N hexamethyldisilane Chemical compound C[Si](C)(C)[Si](C)(C)C NEXSMEBSBIABKL-UHFFFAOYSA-N 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 1
- 238000005984 hydrogenation reaction Methods 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- QULMGWCCKILBTO-UHFFFAOYSA-N n-[dimethylamino(dimethyl)silyl]-n-methylmethanamine Chemical compound CN(C)[Si](C)(C)N(C)C QULMGWCCKILBTO-UHFFFAOYSA-N 0.000 description 1
- IJDNQMDRQITEOD-UHFFFAOYSA-N n-butane Chemical compound CCCC IJDNQMDRQITEOD-UHFFFAOYSA-N 0.000 description 1
- OFBQJSOFQDEBGM-UHFFFAOYSA-N n-pentane Natural products CCCCC OFBQJSOFQDEBGM-UHFFFAOYSA-N 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 239000001294 propane Substances 0.000 description 1
- QQONPFPTGQHPMA-UHFFFAOYSA-N propylene Natural products CC=C QQONPFPTGQHPMA-UHFFFAOYSA-N 0.000 description 1
- 125000004805 propylene group Chemical group [H]C([H])([H])C([H])([*:1])C([H])([H])[*:2] 0.000 description 1
- MWWATHDPGQKSAR-UHFFFAOYSA-N propyne Chemical compound CC#C MWWATHDPGQKSAR-UHFFFAOYSA-N 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 125000003808 silyl group Chemical group [H][Si]([H])([H])[*] 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 125000000383 tetramethylene group Chemical group [H]C([H])([*:1])C([H])([H])C([H])([H])C([H])([H])[*:2] 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 125000000026 trimethylsilyl group Chemical group [H]C([H])([H])[Si]([*])(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
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Description
また、特許文献1には、アモルファスカーボン膜を、多層レジストの下層のレジスト膜の代わりや、反射防止層等の種々の用途へ適用することが開示されている。
図1は本実施形態に係るアモルファスカーボン膜の処理方法を含む半導体装置の製造方法の一連の手順を示すフローチャート、図2および図3はその工程断面図である。
HMDS(Hexamethyldisilan)、
DMSDMA(Dimethylsilyldimethylamine)、
TMSDMA(Dimethylaminotrimethylsilane)、
TMDS(1,1,3,3-Tetramethyldisilazane)、
TMSPyrole(1-Trimethylsilylpyrole)、
BSTFA(N,O-Bis(trimethylsilyl)trifluoroacetamide)、
BDMADMS(Bis(dimethylamino)dimethylsilane)
等を用いることが可能である。これらの化学構造を以下に示す。
SiH4 + HO−C− → H2O + H3Si−C
22;サセプタ
25;ヒータ
30;シャワーヘッド
34,50;ガス供給機構
36;高周波電源
42;装置コントローラ
51;チャンバ
52;ホットプレート
52a;ヒータ
53;気化器
57;排気口
60;装置コントローラ
101;シリコン基板
102;アモルファスカーボン膜
103;ホール
104;トレンチ
105;ダメージ層
106;自然酸化膜
107;変質層
108;表面改質層
110;バリア膜
111;Cu配線層
112;銅拡散バリア膜
120;低誘電率膜
201;アモルファスカーボン膜成膜装置
202;ドライエッチング装置
203;アッシング装置
204;ウエット洗浄処理装置
205;自然酸化膜除去装置
206;シリル化処理装置
211;プロセスコントローラ
212;ユーザーインターフェース
213;記憶部
W;半導体ウエハ
Claims (5)
- 基板上に成膜され、ドライエッチング後にウエット洗浄処理が施されたアモルファスカーボン膜の処理方法であって、
ウエット洗浄処理後、上層の形成前に、アモルファスカーボン膜にシリコン水素化ガスを接触させてアモルファスカーボン膜の表面改質処理を行うことを特徴とするアモルファスカーボン膜の処理方法。 - 前記ウエット洗浄処理の後、前記表面改質処理の前に、前記アモルファスカーボン膜の表面酸化膜を除去する処理を行うことを特徴とする請求項1に記載のアモルファスカーボン膜の処理方法。
- 半導体基板上にアモルファスカーボン膜を含む層間絶縁膜を形成する工程と、
前記層間絶縁膜にドライエッチングを施してホールまたはトレンチを形成する工程と、
前記ドライエッチングを施した層間絶縁膜にウエット洗浄処理を施す工程と、
ウエット洗浄処理後に、アモルファスカーボン膜にシリコン水素化ガスを接触させてアモルファスカーボン膜の表面改質処理を行う工程と、
表面改質処理後、アモルファスカーボン膜の上層としてバリア膜を形成する工程と、
前記ホールまたはトレンチに配線金属を埋め込む工程と
を含むことを特徴とする半導体装置の製造方法。 - 前記ウエット洗浄処理の後、前記表面改質処理の前に、前記アモルファスカーボン膜の表面酸化膜を除去する処理を行うことを特徴とする請求項3に記載の半導体装置の製造方法。
- コンピュータ上で動作し、処理装置を制御するプログラムが記憶された記憶媒体であって、
前記制御プログラムは、実行時に、請求項1または請求項2の方法が行われるようにコンピュータに処理装置を制御させることを特徴とするコンピュータ読取可能な記憶媒体。
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JP2008009504A JP5425404B2 (ja) | 2008-01-18 | 2008-01-18 | アモルファスカーボン膜の処理方法およびそれを用いた半導体装置の製造方法 |
CN2009801025501A CN101919031A (zh) | 2008-01-18 | 2009-01-09 | 非晶碳膜的处理方法以及使用其的半导体器件的制造方法 |
US12/863,362 US8461047B2 (en) | 2008-01-18 | 2009-01-09 | Method for processing amorphous carbon film, and semiconductor device manufacturing method using the method |
KR1020107015462A KR101130086B1 (ko) | 2008-01-18 | 2009-01-09 | 어모퍼스 카본막의 처리 방법, 그것을 이용한 반도체 장치의 제조 방법 및 그와 관련된 컴퓨터 판독 가능한 기억 매체 |
PCT/JP2009/050192 WO2009090912A1 (ja) | 2008-01-18 | 2009-01-09 | アモルファスカーボン膜の処理方法およびそれを用いた半導体装置の製造方法 |
TW098101552A TW200952077A (en) | 2008-01-18 | 2009-01-16 | Method for processing amorphous carbon film, and semiconductor device manufacturing method using the method |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11018017B2 (en) | 2016-09-26 | 2021-05-25 | SCREEN Holdings Co., Ltd. | Substrate treatment method |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20110125651A (ko) | 2009-03-10 | 2011-11-21 | 레르 리키드 쏘시에떼 아노님 뿌르 레드 에렉스뿔라따시옹 데 프로세데 조르즈 클로드 | 저 유전상수 실릴화를 위한 시클릭 아미노 화합물 |
JP5544893B2 (ja) * | 2010-01-20 | 2014-07-09 | 東京エレクトロン株式会社 | 基板処理方法及び記憶媒体 |
JP5411171B2 (ja) * | 2010-02-05 | 2014-02-12 | 東京エレクトロン株式会社 | アモルファスカーボン膜を含む積層構造を形成する方法 |
JP2012079785A (ja) * | 2010-09-30 | 2012-04-19 | Tokyo Electron Ltd | 絶縁膜の改質方法 |
US8524329B2 (en) * | 2011-12-13 | 2013-09-03 | Lam Research Corporation | Electroless copper deposition |
FR2984769B1 (fr) * | 2011-12-22 | 2014-03-07 | Total Sa | Procede de texturation de la surface d'un substrat de silicium, substrat structure et dispositif photovoltaique comportant un tel substrat structure |
KR101973077B1 (ko) * | 2012-01-18 | 2019-04-29 | 삼성디스플레이 주식회사 | 트렌치 형성 방법, 금속 배선 형성 방법, 및 박막 트랜지스터 표시판의 제조 방법 |
JP6225005B2 (ja) * | 2013-12-03 | 2017-11-01 | Sppテクノロジーズ株式会社 | 積層膜及びその製造方法 |
US9305771B2 (en) * | 2013-12-20 | 2016-04-05 | Intel Corporation | Prevention of metal loss in wafer processing |
CN107680497B (zh) * | 2017-11-03 | 2019-12-03 | 京东方科技集团股份有限公司 | 显示基板的制造方法、显示基板、显示面板和显示装置 |
Family Cites Families (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE68929282T2 (de) * | 1988-11-09 | 2001-06-07 | Nitto Denko Corp., Ibaraki | Leitersubstrat, Filmträger, Halbleiteranordnung mit dem Filmträger und Montagestruktur mit der Halbleiteranordnung |
US5139610A (en) * | 1989-04-20 | 1992-08-18 | Honeywell Inc. | Method of making a surface etched shadow mask |
US5468681A (en) * | 1989-08-28 | 1995-11-21 | Lsi Logic Corporation | Process for interconnecting conductive substrates using an interposer having conductive plastic filled vias |
US5207585A (en) * | 1990-10-31 | 1993-05-04 | International Business Machines Corporation | Thin interface pellicle for dense arrays of electrical interconnects |
JPH06510122A (ja) * | 1991-08-23 | 1994-11-10 | エヌチップ インコーポレイテッド | パッケージされていない集積回路のバーン・イン技術 |
US6072236A (en) * | 1996-03-07 | 2000-06-06 | Micron Technology, Inc. | Micromachined chip scale package |
US5889327A (en) * | 1996-10-04 | 1999-03-30 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device with a package having a plurality of bump electrodes and module with a plurality of semiconductor devices |
US5929521A (en) * | 1997-03-26 | 1999-07-27 | Micron Technology, Inc. | Projected contact structure for bumped semiconductor device and resulting articles and assemblies |
JP3627451B2 (ja) | 1997-06-04 | 2005-03-09 | 東京エレクトロン株式会社 | 表面処理方法及びその装置 |
US6448665B1 (en) * | 1997-10-15 | 2002-09-10 | Kabushiki Kaisha Toshiba | Semiconductor package and manufacturing method thereof |
US6426642B1 (en) * | 1999-02-16 | 2002-07-30 | Micron Technology, Inc. | Insert for seating a microelectronic device having a protrusion and a plurality of raised-contacts |
US6228687B1 (en) * | 1999-06-28 | 2001-05-08 | Micron Technology, Inc. | Wafer-level package and methods of fabricating |
JP4002704B2 (ja) * | 1999-12-14 | 2007-11-07 | 松下電器産業株式会社 | 半導体装置の製造方法 |
JP5121090B2 (ja) | 2000-02-17 | 2013-01-16 | アプライド マテリアルズ インコーポレイテッド | アモルファスカーボン層の堆積方法 |
US6513236B2 (en) * | 2000-02-18 | 2003-02-04 | Matsushita Electric Industrial Co., Ltd. | Method of manufacturing bump-component mounted body and device for manufacturing the same |
US6717245B1 (en) * | 2000-06-02 | 2004-04-06 | Micron Technology, Inc. | Chip scale packages performed by wafer level processing |
US6461881B1 (en) * | 2000-06-08 | 2002-10-08 | Micron Technology, Inc. | Stereolithographic method and apparatus for fabricating spacers for semiconductor devices and resulting structures |
US6525413B1 (en) * | 2000-07-12 | 2003-02-25 | Micron Technology, Inc. | Die to die connection method and assemblies and packages including dice so connected |
US6641978B1 (en) * | 2000-07-17 | 2003-11-04 | Creo Srl | Dry multilayer inorganic alloy thermal resist for lithographic processing and image creation |
US7394663B2 (en) * | 2003-02-18 | 2008-07-01 | Matsushita Electric Industrial Co., Ltd. | Electronic component built-in module and method of manufacturing the same |
KR100486087B1 (ko) | 2003-09-22 | 2005-04-28 | 동부아남반도체 주식회사 | 반도체 소자의 층간 절연막 형성 방법 |
US20050095835A1 (en) * | 2003-09-26 | 2005-05-05 | Tessera, Inc. | Structure and method of making capped chips having vertical interconnects |
EP1586674A1 (en) * | 2004-04-14 | 2005-10-19 | Nederlandse Organisatie voor Toegepast-Natuuurwetenschappelijk Onderzoek TNO | Coatings, and methods and devices for the manufacture thereof |
JP5057647B2 (ja) * | 2004-07-02 | 2012-10-24 | 東京エレクトロン株式会社 | 半導体装置の製造方法および半導体装置の製造装置 |
CN1981375A (zh) * | 2004-07-02 | 2007-06-13 | 东京毅力科创株式会社 | 半导体器件的制造方法 |
KR101091896B1 (ko) * | 2004-09-04 | 2011-12-08 | 삼성테크윈 주식회사 | 플립칩 반도체 패키지 및 그 제조방법 |
JP5019741B2 (ja) | 2005-11-30 | 2012-09-05 | 東京エレクトロン株式会社 | 半導体装置の製造方法および基板処理システム |
JP4247690B2 (ja) * | 2006-06-15 | 2009-04-02 | ソニー株式会社 | 電子部品及その製造方法 |
WO2008004584A1 (fr) * | 2006-07-05 | 2008-01-10 | Tokyo Electron Limited | Procédé de post-traitement destiné à un film de carbone amorphe |
US7892937B2 (en) * | 2008-10-16 | 2011-02-22 | Micron Technology, Inc. | Methods of forming capacitors |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11018017B2 (en) | 2016-09-26 | 2021-05-25 | SCREEN Holdings Co., Ltd. | Substrate treatment method |
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