JP5544893B2 - 基板処理方法及び記憶媒体 - Google Patents
基板処理方法及び記憶媒体 Download PDFInfo
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- 239000000758 substrate Substances 0.000 title claims description 44
- 238000003672 processing method Methods 0.000 title claims description 19
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- 239000007789 gas Substances 0.000 claims description 100
- 238000011084 recovery Methods 0.000 claims description 40
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- 229910052799 carbon Inorganic materials 0.000 claims description 24
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 22
- 238000005530 etching Methods 0.000 claims description 22
- 229910052760 oxygen Inorganic materials 0.000 claims description 21
- 229910052751 metal Inorganic materials 0.000 claims description 16
- 239000002184 metal Substances 0.000 claims description 16
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 14
- 239000001301 oxygen Substances 0.000 claims description 14
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- 229910052731 fluorine Inorganic materials 0.000 claims description 11
- 239000010703 silicon Substances 0.000 claims description 10
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- 238000004590 computer program Methods 0.000 claims description 4
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- 239000010410 layer Substances 0.000 description 56
- 239000011229 interlayer Substances 0.000 description 40
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 11
- 238000010438 heat treatment Methods 0.000 description 11
- 229920002120 photoresistant polymer Polymers 0.000 description 11
- 229910052814 silicon oxide Inorganic materials 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 239000010949 copper Substances 0.000 description 8
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 6
- KAHVZNKZQFSBFW-UHFFFAOYSA-N n-methyl-n-trimethylsilylmethanamine Chemical compound CN(C)[Si](C)(C)C KAHVZNKZQFSBFW-UHFFFAOYSA-N 0.000 description 6
- 239000000126 substance Substances 0.000 description 6
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 5
- 239000005751 Copper oxide Substances 0.000 description 5
- 229910021594 Copper(II) fluoride Inorganic materials 0.000 description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 5
- 238000004380 ashing Methods 0.000 description 5
- CURLTUGMZLYLDI-UHFFFAOYSA-N carbon dioxide Natural products O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 5
- 229910000431 copper oxide Inorganic materials 0.000 description 5
- GWFAVIIMQDUCRA-UHFFFAOYSA-L copper(ii) fluoride Chemical compound [F-].[F-].[Cu+2] GWFAVIIMQDUCRA-UHFFFAOYSA-L 0.000 description 5
- 229910052739 hydrogen Inorganic materials 0.000 description 5
- SCPYDCQAZCOKTP-UHFFFAOYSA-N silanol Chemical compound [SiH3]O SCPYDCQAZCOKTP-UHFFFAOYSA-N 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
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- 238000010586 diagram Methods 0.000 description 4
- 239000001257 hydrogen Substances 0.000 description 4
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 4
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 4
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- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 3
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- GJWAPAVRQYYSTK-UHFFFAOYSA-N [(dimethyl-$l^{3}-silanyl)amino]-dimethylsilicon Chemical compound C[Si](C)N[Si](C)C GJWAPAVRQYYSTK-UHFFFAOYSA-N 0.000 description 2
- YRKCREAYFQTBPV-UHFFFAOYSA-N acetylacetone Chemical compound CC(=O)CC(C)=O YRKCREAYFQTBPV-UHFFFAOYSA-N 0.000 description 2
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- 229910002092 carbon dioxide Inorganic materials 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
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- 244000132059 Carica parviflora Species 0.000 description 1
- 235000014653 Carica parviflora Nutrition 0.000 description 1
- 229910018557 Si O Inorganic materials 0.000 description 1
- 229910008051 Si-OH Inorganic materials 0.000 description 1
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- 229910006358 Si—OH Inorganic materials 0.000 description 1
- 239000005441 aurora Substances 0.000 description 1
- 229910002091 carbon monoxide Inorganic materials 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
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- RWRIWBAIICGTTQ-UHFFFAOYSA-N difluoromethane Chemical compound FCF RWRIWBAIICGTTQ-UHFFFAOYSA-N 0.000 description 1
- IEJIGPNLZYLLBP-UHFFFAOYSA-N dimethyl carbonate Chemical compound COC(=O)OC IEJIGPNLZYLLBP-UHFFFAOYSA-N 0.000 description 1
- KZFNONVXCZVHRD-UHFFFAOYSA-N dimethylamino(dimethyl)silicon Chemical compound CN(C)[Si](C)C KZFNONVXCZVHRD-UHFFFAOYSA-N 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
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- 239000007769 metal material Substances 0.000 description 1
- QULMGWCCKILBTO-UHFFFAOYSA-N n-[dimethylamino(dimethyl)silyl]-n-methylmethanamine Chemical compound CN(C)[Si](C)(C)N(C)C QULMGWCCKILBTO-UHFFFAOYSA-N 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229920003209 poly(hydridosilsesquioxane) Polymers 0.000 description 1
- 150000004819 silanols Chemical class 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Inorganic materials [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 125000004646 sulfenyl group Chemical group S(*)* 0.000 description 1
- 125000003639 thymyl group Chemical group C1(=CC(C)=CC=C1C(C)C)* 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
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- H01J37/32—Gas-filled discharge tubes
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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Description
特許文献3及び4には、前記配線層の還元を行う技術などが記載されているが、既述の課題については記載されていない。
半導体装置を製造するための基板を処理する方法において、
炭素及び酸素を含むと共に開口部が形成された低誘電率膜と、シリコンを含むストップ膜と、金属層とがこの順番で上層側から積層された基板を収納した処理容器内にて、酸素及びフッ素を含む処理ガスのプラズマにより、前記開口部を介して前記ストップ膜をエッチングして、前記金属層を露出させる工程と、
次いで、プラズマ処理を行う処理容器とは別の処理容器に前記基板を移載する工程と、
続いて、前記別の処理容器内に還元ガスを供給して、前記プラズマにより酸化された前記金属層の露出面における酸化物を気体状の前記還元ガスにより還元する工程と、
炭素を含む回復処理用のガスを前記基板に供給して、前記低誘電率膜の露出面を含む部位が前記プラズマに曝されることによって炭素が脱落したダメージ層の回復処理を行う工程と、を含み、
前記還元する工程及び前記回復処理を行う工程を共通の前記別の処理容器内において連続的に行うことを特徴とする。
炭素及び酸素を含む低誘電率膜と表面部が酸化された金属層とが露出し、低誘電率膜の露出面を含む部位に炭素の脱落したダメージ層が形成された基板に対して処理を行う基板処理装置に用いられるコンピュータプログラムを格納した記憶媒体において、
前記コンピュータプログラムは、前記基板処理方法を実施するようにステップが組まれていることを特徴とする。
本発明の実施の形態の基板処理方法を説明する前に、この基板処理方法により処理が行われる、半導体装置を製造するための基板である半導体ウエハ(以下「ウエハ」と言う)Wの一例について図1を参照して説明する。
この図1は、ウエハW上に形成された下層側(n番目)の回路層に上層側((n+1)番目)の回路層を積層する様子を示しており、ウエハWの断面の一部を拡大している。この下層側の回路層は、例えばシリコン、炭素、酸素及び水素を含むSiCOHからなる層間絶縁膜1内に、例えばCu(銅)などの金属である配線2が横並びに例えば2箇所に互いに離間して埋め込まれた構成となっている。この配線2(層間絶縁膜1)の上層側には、後述のホール21の深さ寸法をウエハWの面内に亘って均一な深さに形成するために、また当該ホール21内に埋め込まれる有機膜7による配線2の腐食を抑えるために、例えばSiCN(炭窒化シリコン)などのSiを含むストップ膜3が形成されている。尚、配線2は、当該配線2の下層側((n−1)番目)の回路層に埋め込まれた配線(図示せず)に接続されているが、図示を省略している。また、SiCOH膜1と配線2との間には、金属の拡散を抑えるためのバリア膜が形成されているが、図示を省略している。
続いて、前記ウエハWに対して行う処理の流れについて図2〜図5を参照して説明する。先ず、プラズマ処理を行う処理容器内において、例えばCF4ガス、O2(酸素)ガス及びAr(アルゴン)ガスを含む処理ガスをプラズマ化して、このプラズマをウエハWに供給する。このプラズマにより、図2(a)に示すように、フォトレジスト膜6をマスクとして層間絶縁膜4及び無機膜5がエッチングされて、ホール(開口部)21が形成される。このエッチングは、ストップ膜3に対する層間絶縁膜4のエッチング比が大きい(ストップ膜3のエッチング速度よりも層間絶縁膜4のエッチング速度が速い)条件にて行われる。従って、ホール21の深さ位置は、ウエハWの面内においてストップ膜3の上端位置で揃うことになる。
その後、一連の処理を行った基板処理装置からウエハWを外部に搬出し、薬液を用いた洗浄を行った後、例えばスパッタ法により凹部23に金属の拡散を防止するためのバリア膜を介して金属膜を埋め込む。
続いて、既述の処理を行うための基板処理装置の一例について、図6〜図8を参照して説明する。先ず、エッチング処理やアッシング処理などのプラズマ処理を行う平行平板型のプラズマ処理装置70について説明する。このプラズマ処理装置70は、プラズマ処理を行うための処理容器71と、この処理容器71内に設けられ、ウエハWを載置するための載置台30と、この載置台30上のウエハWに対向するように処理容器71の天井面に設けられたガスシャワーヘッドを兼用する上部電極40と、を備えている。
処理容器71の底面の排気口72から伸びる排気管73には、バタフライバルブなどの圧力調整手段74を介して真空ポンプ等を含む真空排気装置75が接続されている。処理容器71の壁面には、ゲートバルブGによって開閉されるウエハWの搬送口76が設けられている。尚、処理容器71は接地されている。
図6中37は、載置台30上のウエハWの温度を調整する温調媒体が通る温調流路であり、38は、載置台30上のウエハWに対して、下面側からHe(ヘリウム)ガス等の熱伝導性ガスをバックサイドガスとして供給するガス流路である。これらの温調流路37及びガス流路38により、プラズマ処理が行われている時のウエハWは、例えば20℃程度に調整される。
また、既述のように還元処理及び回復処理を共通の処理容器51内において行うことによって、夫々専用の処理容器を設けた場合よりも、装置のフットプリントを低減できる。
また、共通の熱処理装置50を用いて還元処理及び回復処理を行ったが、夫々別の熱処理装置50を用いて処理を行っても良い。
1 層間絶縁膜
2 配線
3 ストップ膜
4 層間絶縁膜
15 ダメージ層
16 酸フッ化膜
21 ホール
Claims (3)
- 半導体装置を製造するための基板を処理する方法において、
炭素及び酸素を含むと共に開口部が形成された低誘電率膜と、シリコンを含むストップ膜と、金属層とがこの順番で上層側から積層された基板を収納した処理容器内にて、酸素及びフッ素を含む処理ガスのプラズマにより、前記開口部を介して前記ストップ膜をエッチングして、前記金属層を露出させる工程と、
次いで、プラズマ処理を行う処理容器とは別の処理容器に前記基板を移載する工程と、
続いて、前記別の処理容器内に還元ガスを供給して、前記プラズマにより酸化された前記金属層の露出面における酸化物を気体状の前記還元ガスにより還元する工程と、
炭素を含む回復処理用のガスを前記基板に供給して、前記低誘電率膜の露出面を含む部位が前記プラズマに曝されることによって炭素が脱落したダメージ層の回復処理を行う工程と、を含み、
前記還元する工程及び前記回復処理を行う工程を共通の前記別の処理容器内において連続的に行うことを特徴とする基板処理方法。 - 前記回復処理用のガス及び前記低誘電率膜はシリコンを含み、
前記還元する工程は、回復処理を行う前に行うことを特徴とする請求項1に記載の基板処理方法。 - 炭素及び酸素を含む低誘電率膜と表面部が酸化された金属層とが露出し、低誘電率膜の露出面を含む部位に炭素の脱落したダメージ層が形成された基板に対して処理を行う基板処理装置に用いられるコンピュータプログラムを格納した記憶媒体において、
前記コンピュータプログラムは、請求項1または2に記載の基板処理方法を実施するようにステップが組まれていることを特徴とする記憶媒体。
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