CN114830323B - 作为牺牲覆盖层的自组装单层 - Google Patents

作为牺牲覆盖层的自组装单层

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Publication number
CN114830323B
CN114830323B CN202080085825.1A CN202080085825A CN114830323B CN 114830323 B CN114830323 B CN 114830323B CN 202080085825 A CN202080085825 A CN 202080085825A CN 114830323 B CN114830323 B CN 114830323B
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CN
China
Prior art keywords
substrate
metal surface
group
capping layer
metal
Prior art date
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Active
Application number
CN202080085825.1A
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English (en)
Chinese (zh)
Other versions
CN114830323A (zh
Inventor
艾恩华·罗莫内格雷拉
河野有美子
迪纳·特约索
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
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Tokyo Electron Ltd
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Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of CN114830323A publication Critical patent/CN114830323A/zh
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Publication of CN114830323B publication Critical patent/CN114830323B/zh
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/074—Manufacture or treatment of dielectric parts thereof of dielectric parts comprising thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
    • H10W20/077—Manufacture or treatment of dielectric parts thereof of dielectric parts comprising thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers on sidewalls or on top surfaces of conductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/61—Formation of materials, e.g. in the shape of layers or pillars of insulating materials using masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6342—Liquid deposition, e.g. spin-coating, sol-gel techniques or spray coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6502—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials
    • H10P14/6504—In-situ cleaning
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/69215—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0448—Apparatus for applying a liquid, a resin, an ink or the like
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7618—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating carrousel
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/056—Manufacture or treatment of conductive parts of the interconnections by filling conductive material into holes, grooves or trenches
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/074—Manufacture or treatment of dielectric parts thereof of dielectric parts comprising thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
CN202080085825.1A 2019-12-10 2020-12-08 作为牺牲覆盖层的自组装单层 Active CN114830323B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201962946243P 2019-12-10 2019-12-10
US62/946,243 2019-12-10
PCT/US2020/063770 WO2021118993A1 (en) 2019-12-10 2020-12-08 Self-assembled monolayers as sacrificial capping layers

Publications (2)

Publication Number Publication Date
CN114830323A CN114830323A (zh) 2022-07-29
CN114830323B true CN114830323B (zh) 2026-03-20

Family

ID=76210619

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202080085825.1A Active CN114830323B (zh) 2019-12-10 2020-12-08 作为牺牲覆盖层的自组装单层

Country Status (6)

Country Link
US (1) US11915973B2 (https=)
JP (1) JP7627432B2 (https=)
KR (1) KR102889307B1 (https=)
CN (1) CN114830323B (https=)
TW (1) TWI865682B (https=)
WO (1) WO2021118993A1 (https=)

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JP2024523510A (ja) 2021-07-06 2024-06-28 東京エレクトロン株式会社 自己組織化単分子層を使用する選択的な膜形成
US11990369B2 (en) * 2021-08-20 2024-05-21 Applied Materials, Inc. Selective patterning with molecular layer deposition
JP2023182324A (ja) * 2022-06-14 2023-12-26 東京エレクトロン株式会社 成膜方法及び成膜装置
JP2024049188A (ja) * 2022-09-28 2024-04-09 東京エレクトロン株式会社 膜形成方法及び基板処理装置
JP2024081396A (ja) * 2022-12-06 2024-06-18 東京エレクトロン株式会社 成膜方法及び成膜装置
US12604685B2 (en) * 2023-07-19 2026-04-14 Tokyo Electron Limited Methods for controlling spin-on self-assembled monolayer (SAM) selectivity
JP2025087989A (ja) * 2023-11-30 2025-06-11 東京エレクトロン株式会社 成膜方法及び成膜装置
US20260053045A1 (en) * 2024-08-16 2026-02-19 Applied Materials, Inc. Integrated encapsulation deposition with metal recovery and passivation

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US6530380B1 (en) * 1999-11-19 2003-03-11 Chartered Semiconductor Manufacturing Ltd. Method for selective oxide etching in pre-metal deposition
US7468105B2 (en) * 2001-10-16 2008-12-23 Micron Technology, Inc. CMP cleaning composition with microbial inhibitor
US7387362B2 (en) * 2005-03-18 2008-06-17 Hewlett-Packard Development Company, L.P. Methods and architecture for applying self-assembled monolayer(s)
CN101903990B (zh) * 2007-12-18 2013-11-06 杨秉春 嵌入式互连系统的形成方法、双重嵌入式互连系统的形成方法及集成电路装置的形成方法
US7875519B2 (en) * 2008-05-21 2011-01-25 Intel Corporation Metal gate structure and method of manufacturing same
WO2010032616A1 (ja) 2008-09-19 2010-03-25 三菱瓦斯化学株式会社 銅配線表面保護液および半導体回路の製造方法
AU2010310750B2 (en) * 2009-10-23 2015-02-26 President And Fellows Of Harvard College Self-aligned barrier and capping layers for interconnects
CN102270607B (zh) * 2010-06-03 2014-01-29 中国科学院微电子研究所 栅极堆叠的制造方法和半导体器件
US8728720B2 (en) * 2010-06-08 2014-05-20 The Regents Of The University Of California Arbitrary pattern direct nanostructure fabrication methods and system
EP2674996A1 (en) * 2012-06-15 2013-12-18 Imec VZW Method for growing nanostructures in recessed structures
JP6552009B2 (ja) 2013-12-17 2019-07-31 東京エレクトロン株式会社 基板への周期的オルガノシリケートまたは自己組織化モノレイヤのスピンオンコーティングのためのシステムおよび方法
CN107406977A (zh) 2015-02-26 2017-11-28 应用材料公司 使用自组装单层的选择性电介质沉积的方法
US10316406B2 (en) 2015-10-21 2019-06-11 Ultratech, Inc. Methods of forming an ALD-inhibiting layer using a self-assembled monolayer
WO2017189135A1 (en) 2016-04-25 2017-11-02 Applied Materials, Inc. Chemical delivery chamber for self-assembled monolayer processes
JP2017222928A (ja) * 2016-05-31 2017-12-21 東京エレクトロン株式会社 表面処理による選択的堆積
US10068764B2 (en) 2016-09-13 2018-09-04 Tokyo Electron Limited Selective metal oxide deposition using a self-assembled monolayer surface pretreatment
TWI739984B (zh) * 2017-01-31 2021-09-21 美商應用材料股份有限公司 就圖案化應用進行選擇性沉積之方案
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KR102709865B1 (ko) 2017-05-05 2024-09-26 퀀텀-에스아이 인코포레이티드 생물학적 반응에 있어서 개질된 표면 반응성 및 오손방지 특성을 갖는 기재
TWI762194B (zh) 2017-07-18 2022-04-21 美商應用材料股份有限公司 在金屬材料表面上沉積阻擋層的方法
US10586734B2 (en) * 2017-11-20 2020-03-10 Tokyo Electron Limited Method of selective film deposition for forming fully self-aligned vias
US10782613B2 (en) 2018-04-19 2020-09-22 International Business Machines Corporation Polymerizable self-assembled monolayers for use in atomic layer deposition
US10655217B2 (en) * 2018-05-01 2020-05-19 Spts Technologies Limited Method of forming a passivation layer on a substrate

Also Published As

Publication number Publication date
JP2023505992A (ja) 2023-02-14
TW202135135A (zh) 2021-09-16
CN114830323A (zh) 2022-07-29
WO2021118993A1 (en) 2021-06-17
US20210175118A1 (en) 2021-06-10
US11915973B2 (en) 2024-02-27
KR20220113444A (ko) 2022-08-12
TWI865682B (zh) 2024-12-11
JP7627432B2 (ja) 2025-02-06
KR102889307B1 (ko) 2025-11-20

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