JP2020501373A5 - - Google Patents
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- JP2020501373A5 JP2020501373A5 JP2019530792A JP2019530792A JP2020501373A5 JP 2020501373 A5 JP2020501373 A5 JP 2020501373A5 JP 2019530792 A JP2019530792 A JP 2019530792A JP 2019530792 A JP2019530792 A JP 2019530792A JP 2020501373 A5 JP2020501373 A5 JP 2020501373A5
- Authority
- JP
- Japan
- Prior art keywords
- reactant
- halide
- substrate
- gas phase
- etching
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 239000000376 reactant Substances 0.000 claims 78
- 238000000034 method Methods 0.000 claims 64
- 150000004820 halides Chemical class 0.000 claims 59
- 239000012071 phase Substances 0.000 claims 53
- 239000007789 gas Substances 0.000 claims 44
- 239000000758 substrate Substances 0.000 claims 43
- 238000005530 etching Methods 0.000 claims 30
- 238000006243 chemical reaction Methods 0.000 claims 11
- 239000010408 film Substances 0.000 claims 11
- 239000003446 ligand Substances 0.000 claims 8
- 239000012528 membrane Substances 0.000 claims 7
- 229910052751 metal Inorganic materials 0.000 claims 7
- 239000002184 metal Substances 0.000 claims 7
- 239000007795 chemical reaction product Substances 0.000 claims 6
- -1 halogen Halide Chemical class 0.000 claims 6
- 239000000463 material Substances 0.000 claims 6
- 229910052760 oxygen Inorganic materials 0.000 claims 5
- 239000012808 vapor phase Substances 0.000 claims 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 4
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 claims 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims 4
- 229910052739 hydrogen Inorganic materials 0.000 claims 4
- 239000001257 hydrogen Substances 0.000 claims 4
- 229910052698 phosphorus Inorganic materials 0.000 claims 4
- 239000011574 phosphorus Substances 0.000 claims 4
- 239000000126 substance Substances 0.000 claims 4
- 229910052717 sulfur Inorganic materials 0.000 claims 4
- 229910052718 tin Inorganic materials 0.000 claims 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical group [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 3
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 3
- 229910052799 carbon Inorganic materials 0.000 claims 3
- 238000010574 gas phase reaction Methods 0.000 claims 3
- 150000005309 metal halides Chemical class 0.000 claims 3
- MWUXSHHQAYIFBG-UHFFFAOYSA-N nitrogen oxide Inorganic materials O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 claims 3
- 239000001301 oxygen Substances 0.000 claims 3
- 239000011593 sulfur Substances 0.000 claims 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims 2
- 229910017090 AlO 2 Inorganic materials 0.000 claims 2
- BDAGIHXWWSANSR-UHFFFAOYSA-N Formic acid Chemical compound OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 claims 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 2
- 229910004166 TaN Inorganic materials 0.000 claims 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims 2
- GEIAQOFPUVMAGM-UHFFFAOYSA-N ZrO Inorganic materials [Zr]=O GEIAQOFPUVMAGM-UHFFFAOYSA-N 0.000 claims 2
- 150000001266 acyl halides Chemical class 0.000 claims 2
- 230000015572 biosynthetic process Effects 0.000 claims 2
- 229910052796 boron Inorganic materials 0.000 claims 2
- 235000019253 formic acid Nutrition 0.000 claims 2
- 150000002431 hydrogen Chemical class 0.000 claims 2
- 229910001507 metal halide Inorganic materials 0.000 claims 2
- 229910052750 molybdenum Inorganic materials 0.000 claims 2
- 229910052757 nitrogen Inorganic materials 0.000 claims 2
- 229910052702 rhenium Inorganic materials 0.000 claims 2
- 229910052710 silicon Inorganic materials 0.000 claims 2
- 229910052715 tantalum Inorganic materials 0.000 claims 2
- VOITXYVAKOUIBA-UHFFFAOYSA-N triethylaluminium Chemical compound CC[Al](CC)CC VOITXYVAKOUIBA-UHFFFAOYSA-N 0.000 claims 2
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 claims 2
- 229910052720 vanadium Inorganic materials 0.000 claims 2
- KNAVTGAJQKHZAS-UHFFFAOYSA-N 2-chloroethoxy(pentafluoro)-$l^{6}-sulfane Chemical compound FS(F)(F)(F)(F)OCCCl KNAVTGAJQKHZAS-UHFFFAOYSA-N 0.000 claims 1
- 229910017083 AlN Inorganic materials 0.000 claims 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims 1
- 239000004215 Carbon black (E152) Substances 0.000 claims 1
- 229910018503 SF6 Inorganic materials 0.000 claims 1
- 229910004541 SiN Inorganic materials 0.000 claims 1
- 229910010413 TiO 2 Inorganic materials 0.000 claims 1
- 150000001350 alkyl halides Chemical class 0.000 claims 1
- 229910052787 antimony Inorganic materials 0.000 claims 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims 1
- WRJWRGBVPUUDLA-UHFFFAOYSA-N chlorosulfonyl isocyanate Chemical compound ClS(=O)(=O)N=C=O WRJWRGBVPUUDLA-UHFFFAOYSA-N 0.000 claims 1
- 150000001875 compounds Chemical class 0.000 claims 1
- 229910052802 copper Inorganic materials 0.000 claims 1
- UQSQSQZYBQSBJZ-UHFFFAOYSA-N fluorosulfonic acid Chemical group OS(F)(=O)=O UQSQSQZYBQSBJZ-UHFFFAOYSA-N 0.000 claims 1
- 229910052732 germanium Inorganic materials 0.000 claims 1
- 229910052736 halogen Inorganic materials 0.000 claims 1
- 125000005843 halogen group Chemical group 0.000 claims 1
- 229930195733 hydrocarbon Natural products 0.000 claims 1
- 150000002430 hydrocarbons Chemical class 0.000 claims 1
- 229910044991 metal oxide Inorganic materials 0.000 claims 1
- 150000004706 metal oxides Chemical class 0.000 claims 1
- 229910052752 metalloid Inorganic materials 0.000 claims 1
- 150000002739 metals Chemical class 0.000 claims 1
- JFCHSQDLLFJHOA-UHFFFAOYSA-N n,n-dimethylsulfamoyl chloride Chemical compound CN(C)S(Cl)(=O)=O JFCHSQDLLFJHOA-UHFFFAOYSA-N 0.000 claims 1
- 229910052758 niobium Inorganic materials 0.000 claims 1
- 150000004767 nitrides Chemical class 0.000 claims 1
- 229910052755 nonmetal Inorganic materials 0.000 claims 1
- 239000013110 organic ligand Substances 0.000 claims 1
- 150000003461 sulfonyl halides Chemical class 0.000 claims 1
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 claims 1
- 229960000909 sulfur hexafluoride Drugs 0.000 claims 1
- 239000010409 thin film Substances 0.000 claims 1
- 229910052723 transition metal Inorganic materials 0.000 claims 1
- 150000003624 transition metals Chemical class 0.000 claims 1
- ITMCEJHCFYSIIV-UHFFFAOYSA-N triflic acid Chemical compound OS(=O)(=O)C(F)(F)F ITMCEJHCFYSIIV-UHFFFAOYSA-N 0.000 claims 1
- GVZFDPPAJXHNGL-UHFFFAOYSA-N trifluoromethyl trifluoromethanesulfonate Chemical compound FC(F)(F)OS(=O)(=O)C(F)(F)F GVZFDPPAJXHNGL-UHFFFAOYSA-N 0.000 claims 1
- 229910052721 tungsten Inorganic materials 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2021214437A JP7161024B2 (ja) | 2016-12-09 | 2021-12-28 | 熱原子層エッチングプロセス |
Applications Claiming Priority (9)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201662432318P | 2016-12-09 | 2016-12-09 | |
| US62/432,318 | 2016-12-09 | ||
| US201762449945P | 2017-01-24 | 2017-01-24 | |
| US62/449,945 | 2017-01-24 | ||
| US201762455989P | 2017-02-07 | 2017-02-07 | |
| US62/455,989 | 2017-02-07 | ||
| US201762485330P | 2017-04-13 | 2017-04-13 | |
| US62/485,330 | 2017-04-13 | ||
| PCT/US2017/065170 WO2018106955A1 (en) | 2016-12-09 | 2017-12-07 | Thermal atomic layer etching processes |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2021214437A Division JP7161024B2 (ja) | 2016-12-09 | 2021-12-28 | 熱原子層エッチングプロセス |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2020501373A JP2020501373A (ja) | 2020-01-16 |
| JP2020501373A5 true JP2020501373A5 (https=) | 2021-01-21 |
| JP7062658B2 JP7062658B2 (ja) | 2022-05-06 |
Family
ID=62488576
Family Applications (5)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2019530792A Active JP7062658B2 (ja) | 2016-12-09 | 2017-12-07 | 熱原子層エッチングプロセス |
| JP2021214437A Active JP7161024B2 (ja) | 2016-12-09 | 2021-12-28 | 熱原子層エッチングプロセス |
| JP2022163420A Active JP7470763B2 (ja) | 2016-12-09 | 2022-10-11 | 熱原子層エッチングプロセス |
| JP2023134806A Pending JP2023159315A (ja) | 2016-12-09 | 2023-08-22 | 熱原子層エッチングプロセス |
| JP2025061057A Pending JP2025106363A (ja) | 2016-12-09 | 2025-04-02 | 熱原子層エッチングプロセス |
Family Applications After (4)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2021214437A Active JP7161024B2 (ja) | 2016-12-09 | 2021-12-28 | 熱原子層エッチングプロセス |
| JP2022163420A Active JP7470763B2 (ja) | 2016-12-09 | 2022-10-11 | 熱原子層エッチングプロセス |
| JP2023134806A Pending JP2023159315A (ja) | 2016-12-09 | 2023-08-22 | 熱原子層エッチングプロセス |
| JP2025061057A Pending JP2025106363A (ja) | 2016-12-09 | 2025-04-02 | 熱原子層エッチングプロセス |
Country Status (6)
| Country | Link |
|---|---|
| US (11) | US10280519B2 (https=) |
| JP (5) | JP7062658B2 (https=) |
| KR (7) | KR102292077B1 (https=) |
| CN (2) | CN110050331B (https=) |
| TW (7) | TWI734874B (https=) |
| WO (1) | WO2018106955A1 (https=) |
Families Citing this family (68)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10115601B2 (en) * | 2016-02-03 | 2018-10-30 | Tokyo Electron Limited | Selective film formation for raised and recessed features using deposition and etching processes |
| US10280519B2 (en) | 2016-12-09 | 2019-05-07 | Asm Ip Holding B.V. | Thermal atomic layer etching processes |
| US10283319B2 (en) | 2016-12-22 | 2019-05-07 | Asm Ip Holding B.V. | Atomic layer etching processes |
| JP6980406B2 (ja) * | 2017-04-25 | 2021-12-15 | 株式会社日立ハイテク | 半導体製造装置及び半導体装置の製造方法 |
| JP7356909B2 (ja) | 2017-05-05 | 2023-10-05 | クアンタム－エスアイ インコーポレイテッド | 生物学的反応における表面反応性と防汚特性が改変された基板 |
| JP6936700B2 (ja) | 2017-10-31 | 2021-09-22 | 株式会社日立ハイテク | 半導体製造装置及び半導体装置の製造方法 |
| KR102016927B1 (ko) * | 2017-11-01 | 2019-10-21 | 한국기초과학지원연구원 | 원자층 연마 방법 및 이를 위한 연마 장치 |
| US10622221B2 (en) * | 2017-12-14 | 2020-04-14 | Applied Materials, Inc. | Methods of etching metal oxides with less etch residue |
| US11205700B2 (en) * | 2018-07-16 | 2021-12-21 | Taiwan Semiconductor Manufacturing Co., Ltd. | Air gap spacer and related methods |
| KR102902002B1 (ko) * | 2018-09-13 | 2025-12-18 | 샌트랄 글래스 컴퍼니 리미티드 | 실리콘 산화물의 에칭 방법 및 에칭 장치 |
| US11387112B2 (en) * | 2018-10-04 | 2022-07-12 | Tokyo Electron Limited | Surface processing method and processing system |
| KR102774836B1 (ko) * | 2019-01-15 | 2025-02-27 | 램 리써치 코포레이션 | 금속-프리 리간드들을 사용하는 금속 원자 층 에칭 및 증착 장치들과 프로세스들 |
| CN111771262B (zh) * | 2019-02-01 | 2023-12-08 | 株式会社日立高新技术 | 蚀刻方法以及等离子处理装置 |
| JP6905149B2 (ja) | 2019-02-14 | 2021-07-21 | 株式会社日立ハイテク | 半導体製造装置 |
| JP2020136602A (ja) * | 2019-02-25 | 2020-08-31 | 株式会社Adeka | エッチング方法 |
| JP7193731B2 (ja) * | 2019-03-29 | 2022-12-21 | 東京エレクトロン株式会社 | エッチング方法及びエッチング装置 |
| KR102860928B1 (ko) * | 2019-05-15 | 2025-09-17 | 가부시끼가이샤 레조낙 | 금속 제거 방법, 드라이 에칭 방법, 및 반도체 소자의 제조 방법 |
| CN121358194A (zh) * | 2019-06-11 | 2026-01-16 | 应用材料公司 | 使用氟及金属卤化物来蚀刻金属氧化物 |
| JP7737789B2 (ja) | 2019-07-18 | 2025-09-11 | エーエスエム・アイピー・ホールディング・ベー・フェー | 半導体処理システム用シャワーヘッドデバイス |
| JP7548740B2 (ja) * | 2019-07-18 | 2024-09-10 | エーエスエム・アイピー・ホールディング・ベー・フェー | 中間チャンバーを備える半導体気相エッチング装置 |
| KR20220079943A (ko) * | 2019-10-11 | 2022-06-14 | 퀀텀-에스아이 인코포레이티드 | 증기 상에서의 표면 개질 |
| US11574813B2 (en) | 2019-12-10 | 2023-02-07 | Asm Ip Holding B.V. | Atomic layer etching |
| KR102882113B1 (ko) * | 2019-12-12 | 2025-11-05 | 도쿄엘렉트론가부시키가이샤 | 기판 처리 방법 및 기판 처리 장치 |
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| US12142479B2 (en) * | 2020-01-17 | 2024-11-12 | Asm Ip Holding B.V. | Formation of SiOCN thin films |
| JP7096279B2 (ja) | 2020-03-25 | 2022-07-05 | 株式会社Kokusai Electric | 半導体装置の製造方法、基板処理装置、プログラム、および基板処理方法 |
| TWI888525B (zh) | 2020-04-08 | 2025-07-01 | 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 | 用於選擇性蝕刻氧化矽膜之設備及方法 |
| TWI907414B (zh) | 2020-04-24 | 2025-12-11 | 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 | 用於填充半導體基板上之三維結構中的間隙之方法 |
| JP7472634B2 (ja) | 2020-04-28 | 2024-04-23 | 東京エレクトロン株式会社 | エッチング方法及びエッチング装置 |
| KR102900076B1 (ko) * | 2020-05-29 | 2025-12-16 | 가부시끼가이샤 레조낙 | 드라이 에칭 방법, 반도체 소자의 제조 방법, 및 클리닝 방법 |
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| US11621172B2 (en) * | 2020-07-01 | 2023-04-04 | Applied Materials, Inc. | Vapor phase thermal etch solutions for metal oxo photoresists |
| US11545397B2 (en) | 2020-07-15 | 2023-01-03 | Taiwan Semiconductor Manufacturing Co., Ltd. | Spacer structure for semiconductor device and method for forming the same |
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| JP7683343B2 (ja) * | 2020-08-28 | 2025-05-27 | 東京エレクトロン株式会社 | エッチング方法及びエッチング装置 |
| WO2022050099A1 (ja) * | 2020-09-01 | 2022-03-10 | 株式会社Adeka | エッチング方法 |
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| KR102737905B1 (ko) * | 2021-12-13 | 2024-12-04 | 한양대학교 에리카산학협력단 | 촉매 반응 기반 원자층 식각 방법 |
| KR102737901B1 (ko) * | 2021-12-13 | 2024-12-04 | 한양대학교 에리카산학협력단 | 고유전율 박막의 원자층 식각 방법 및 원자층 식각 장치 |
| US12295163B2 (en) | 2021-12-16 | 2025-05-06 | Asm Ip Holding B.V. | Formation of gate stacks comprising a threshold voltage tuning layer |
| TW202335068A (zh) * | 2021-12-17 | 2023-09-01 | 德商馬克專利公司 | 鋯及鉿之氧化物的各向同性熱原子層蝕刻 |
| TW202338158A (zh) * | 2022-02-03 | 2023-10-01 | 德商馬克專利公司 | 使用新穎共反應物作為鹵化劑之金屬原子層蝕刻 |
| KR102815089B1 (ko) * | 2022-04-28 | 2025-06-04 | 주식회사 히타치하이테크 | 에칭 방법 |
| WO2024123579A1 (en) * | 2022-12-07 | 2024-06-13 | Lam Research Corporation | Semiconductor processing chamber with metal or metalloid fluoride process exposed coating |
| TWI895928B (zh) * | 2023-03-22 | 2025-09-01 | 日商國際電氣股份有限公司 | 蝕刻方法、半導體裝置之製造方法、程式及處理裝置 |
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