JP4836112B2 - 半導体処理装置のクリーニング方法およびシリコン基板のエッチング方法 - Google Patents
半導体処理装置のクリーニング方法およびシリコン基板のエッチング方法 Download PDFInfo
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- 238000005530 etching Methods 0.000 title claims description 60
- 238000000034 method Methods 0.000 title claims description 56
- 239000000758 substrate Substances 0.000 title claims description 47
- 229910052710 silicon Inorganic materials 0.000 title claims description 39
- 238000004140 cleaning Methods 0.000 title claims description 38
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims description 36
- 239000010703 silicon Substances 0.000 title claims description 36
- 239000004065 semiconductor Substances 0.000 title claims description 30
- 239000007789 gas Substances 0.000 claims description 101
- 229910052760 oxygen Inorganic materials 0.000 claims description 27
- 239000001301 oxygen Substances 0.000 claims description 24
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 23
- 238000010438 heat treatment Methods 0.000 claims description 9
- 238000009832 plasma treatment Methods 0.000 claims description 9
- 230000003213 activating effect Effects 0.000 claims 1
- 239000010408 film Substances 0.000 description 38
- 229910052736 halogen Inorganic materials 0.000 description 14
- 150000002367 halogens Chemical class 0.000 description 14
- 230000001590 oxidative effect Effects 0.000 description 14
- 125000004430 oxygen atom Chemical group O* 0.000 description 12
- 238000000151 deposition Methods 0.000 description 8
- 238000000231 atomic layer deposition Methods 0.000 description 7
- 238000005229 chemical vapour deposition Methods 0.000 description 7
- 150000001875 compounds Chemical class 0.000 description 6
- 230000008021 deposition Effects 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 229910052731 fluorine Inorganic materials 0.000 description 3
- 239000011737 fluorine Substances 0.000 description 3
- 229910052735 hafnium Inorganic materials 0.000 description 3
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
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- -1 HfO z Chemical compound 0.000 description 2
- 229910003691 SiBr Inorganic materials 0.000 description 2
- 229910003902 SiCl 4 Inorganic materials 0.000 description 2
- 229910007880 ZrAl Inorganic materials 0.000 description 2
- 229910006249 ZrSi Inorganic materials 0.000 description 2
- 230000001464 adherent effect Effects 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
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- 238000002474 experimental method Methods 0.000 description 2
- 150000004820 halides Chemical class 0.000 description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 2
- 150000002902 organometallic compounds Chemical class 0.000 description 2
- BSYNRYMUTXBXSQ-UHFFFAOYSA-N Aspirin Chemical compound CC(=O)OC1=CC=CC=C1C(O)=O BSYNRYMUTXBXSQ-UHFFFAOYSA-N 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 229910007926 ZrCl Inorganic materials 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 229910021482 group 13 metal Inorganic materials 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910001510 metal chloride Inorganic materials 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
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- 239000002245 particle Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000001603 reducing effect Effects 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- 239000003039 volatile agent Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
- H01L21/31122—Etching inorganic layers by chemical means by dry-etching of layers not containing Si, e.g. PZT, Al2O3
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32853—Hygiene
- H01J37/32862—In situ cleaning of vessels and/or internal parts
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
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- Chemical Kinetics & Catalysis (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Inorganic Chemistry (AREA)
- Plasma & Fusion (AREA)
- Health & Medical Sciences (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Analytical Chemistry (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Description
請求項1にかかる発明は、半導体処理装置のチャンバー内に生成した高誘電率酸化物からなる堆積物または付着物を除去する半導体処理装置のクリーニング方法であって、酸素と、BCl 3 とを混合させた混合ガスを、載置電極にバイアス電圧を印加しないプラズマ処理または加熱処理により活性化し、前記堆積物または付着物を除去することを特徴とする半導体処理装置のクリーニング方法である。
請求項4にかかる発明は、前記混合ガス中の酸素添加量が、1〜10%であることを特徴とする請求項8記載のシリコン基板のエッチング方法である。
本発明に係る半導体処理装置のクリーニング方法とは、半導体処理装置のチャンバー内に生成した高誘電率酸化物からなる堆積物または付着物を除去するものである。
本発明に係るシリコン基板のエッチング方法とは、酸素原子供与性ガスまたは酸化性ガスのいずれかと、ハロゲン系ガスとを混合させたガスを、プラズマ処理または加熱処理により活性化し、シリコン基板上に成膜した高誘電率酸化物をエッチングするものである。
図1に示した半導体処理装置を用いて、シリコン基板上に成膜した厚さ100nmのHfO2膜のエッチングを行った。プラズマを発生させるには、2.45GHzのマイクロ波と875Gの磁界を用いた。載置電極には、高周波電源から電力を供給せずに、シリコン基板をプラズマに暴露した。エッチングガスにはBCl3とO2との混合ガスを用い、O2の添加量を、0%、10%、20%と変化させた。エッチングの条件を表1に示す。プラズマ暴露前後のHfO2膜の膜厚の差を段差計で測定し、エッチング速度を求めた。混合ガス中の酸素添加量を変化させた時のHfO2膜のエッチング速度との関係を図2のグラフに示す。
混合ガス中の酸素添加量を0%または10%とし、チャンバー内の真空度を5、6、8、10、12mTorrと変化させた以外は、実験例1と同様にしてエッチングを行い、HfO2膜の膜厚の差を測定し、エッチング速度を求めた。エッチングの条件を表2に示す。混合ガス中の酸素添加量及び真空度を変化させた時のHfO2膜のエッチング速度との関係を図3のグラフに示す。
混合ガス中の酸素添加量を10%とし、チャンバー内の真空度を5、10、12mTorrに変化させた以外は、実験例2と同様にしてエッチングを行い、HfO2膜とシリコン基板の膜厚の差を測定し、エッチング速度を求めた。混合ガス中の真空度を変化させた時のHfO2膜及びシリコン基板のエッチング速度との関係を図4のグラフに示す。
8 シリコン基板
Claims (4)
- 半導体処理装置のチャンバー内に生成した高誘電率酸化物からなる堆積物または付着物を除去する半導体処理装置のクリーニング方法であって、
酸素と、BCl 3 とを混合させた混合ガスを、載置電極にバイアス電圧を印加しないプラズマ処理または加熱処理により活性化し、前記堆積物または付着物を除去することを特徴とする半導体処理装置のクリーニング方法。 - 前記混合ガス中の酸素添加量が、1〜10%であることを特徴とする請求項1記載の半導体処理装置のクリーニング方法。
- シリコン基板上に成膜した高誘電率酸化物をエッチングする方法であって、
酸素と、BCl 3 とを混合させた混合ガスを、載置電極にバイアス電圧を印加しないプラズマ処理または加熱処理により活性化し、前記高誘電率酸化物をエッチングすることを特徴とするシリコン基板のエッチング方法。 - 前記混合ガス中の酸素添加量が、1〜10%であることを特徴とする請求項3記載のシリコン基板のエッチング方法。
Priority Applications (6)
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JP2004374107A JP4836112B2 (ja) | 2004-12-24 | 2004-12-24 | 半導体処理装置のクリーニング方法およびシリコン基板のエッチング方法 |
EP05819632A EP1840946A1 (en) | 2004-12-24 | 2005-12-22 | Method for cleaning of semiconductor processing apparatus and method for ethching silicon substrate |
KR1020077015290A KR100876215B1 (ko) | 2004-12-24 | 2005-12-22 | 반도체 처리장치의 클리닝 방법 및 실리콘기판의 식각 방법 |
US11/793,423 US20080160777A1 (en) | 2004-12-24 | 2005-12-22 | Cleaning Method For Processing Chamber Of Semiconductor Substrates And Etching Method For Silicon Substrates Technical Field |
TW094145821A TWI381438B (zh) | 2004-12-24 | 2005-12-22 | 半導體處理裝置之清潔方法及矽基板之蝕刻方法 |
PCT/JP2005/023625 WO2006068235A1 (ja) | 2004-12-24 | 2005-12-22 | 半導体処理装置のクリーニング方法およびシリコン基板のエッチング方法 |
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JP2004374107A JP4836112B2 (ja) | 2004-12-24 | 2004-12-24 | 半導体処理装置のクリーニング方法およびシリコン基板のエッチング方法 |
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JP2006179834A JP2006179834A (ja) | 2006-07-06 |
JP4836112B2 true JP4836112B2 (ja) | 2011-12-14 |
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US (1) | US20080160777A1 (ja) |
EP (1) | EP1840946A1 (ja) |
JP (1) | JP4836112B2 (ja) |
KR (1) | KR100876215B1 (ja) |
TW (1) | TWI381438B (ja) |
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Families Citing this family (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008060171A (ja) * | 2006-08-29 | 2008-03-13 | Taiyo Nippon Sanso Corp | 半導体処理装置のクリーニング方法 |
US8183161B2 (en) * | 2006-09-12 | 2012-05-22 | Tokyo Electron Limited | Method and system for dry etching a hafnium containing material |
WO2008135948A1 (en) * | 2007-05-03 | 2008-11-13 | L'air Liquide-Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude | Method of cleaning stannane distribution system |
JP2008288281A (ja) * | 2007-05-15 | 2008-11-27 | Hitachi Kokusai Electric Inc | 半導体装置の製造方法および基板処理装置 |
JP2009021584A (ja) * | 2007-06-27 | 2009-01-29 | Applied Materials Inc | 高k材料ゲート構造の高温エッチング方法 |
JP5110987B2 (ja) * | 2007-07-05 | 2012-12-26 | 株式会社日立ハイテクノロジーズ | プラズマ処理方法およびコンピュータ読み取り可能な記録媒体 |
JP5297615B2 (ja) * | 2007-09-07 | 2013-09-25 | 株式会社日立ハイテクノロジーズ | ドライエッチング方法 |
WO2009037991A1 (ja) * | 2007-09-19 | 2009-03-26 | Hitachi Kokusai Electric Inc. | クリーニング方法及び基板処理装置 |
JP2009123795A (ja) * | 2007-11-13 | 2009-06-04 | Hitachi Kokusai Electric Inc | 半導体装置の製造方法及び基板処理装置 |
JP4994197B2 (ja) * | 2007-11-16 | 2012-08-08 | 株式会社日立国際電気 | 半導体装置の製造方法及び基板処理装置 |
JP5011148B2 (ja) * | 2008-02-06 | 2012-08-29 | 大陽日酸株式会社 | 半導体装置の製造方法、クリーニング方法及び基板処理装置 |
JP2009188257A (ja) * | 2008-02-07 | 2009-08-20 | Tokyo Electron Ltd | プラズマエッチング方法及びプラズマエッチング装置並びに記憶媒体 |
KR20100006009A (ko) * | 2008-07-08 | 2010-01-18 | 주성엔지니어링(주) | 반도체 제조 장치 |
US9093388B2 (en) | 2010-02-01 | 2015-07-28 | Central Glass Company, Limited | Dry etching agent and dry etching method using the same |
US8784676B2 (en) * | 2012-02-03 | 2014-07-22 | Lam Research Corporation | Waferless auto conditioning |
US9441290B2 (en) * | 2013-05-29 | 2016-09-13 | Varian Semiconductor Equipment Associates, Inc. | System and method of improving implant quality in a plasma-based implant system |
JP6422262B2 (ja) | 2013-10-24 | 2018-11-14 | 東京エレクトロン株式会社 | プラズマ処理方法及びプラズマ処理装置 |
CN104841662B (zh) * | 2014-02-19 | 2017-04-05 | 宇宙电路板设备(深圳)有限公司 | 一种湿制程设备清洗方法及装置 |
US10283319B2 (en) | 2016-12-22 | 2019-05-07 | Asm Ip Holding B.V. | Atomic layer etching processes |
US12076763B2 (en) * | 2017-06-05 | 2024-09-03 | Applied Materials, Inc. | Selective in-situ cleaning of high-k films from processing chamber using reactive gas precursor |
US20180347037A1 (en) * | 2017-06-05 | 2018-12-06 | Applied Materials, Inc. | Selective in-situ cleaning of high-k films from processing chamber using reactive gas precursor |
US20180350571A1 (en) * | 2017-06-05 | 2018-12-06 | Applied Materials, Inc. | Selective in-situ cleaning of high-k films from processing chamber using reactive gas precursor |
WO2019051364A1 (en) * | 2017-09-11 | 2019-03-14 | Applied Materials, Inc. | IN SITU SELECTIVE CLEANING OF HIGH K FILMS FROM A PROCESSING CHAMBER USING A REACTIVE GAS PRECURSOR |
EP4099365A4 (en) * | 2020-01-30 | 2023-08-16 | Resonac Corporation | ETCHING PROCESS |
US11572622B2 (en) | 2020-09-14 | 2023-02-07 | Applied Materials, Inc. | Systems and methods for cleaning low-k deposition chambers |
CN115083877B (zh) * | 2021-03-11 | 2024-08-23 | 中国科学院微电子研究所 | 改善多晶硅膜层干法刻蚀速率稳定性的方法及刻蚀腔室 |
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JP3367600B2 (ja) * | 1998-06-08 | 2003-01-14 | シャープ株式会社 | 誘電体薄膜素子の製造方法 |
JP4222707B2 (ja) * | 2000-03-24 | 2009-02-12 | 東京エレクトロン株式会社 | プラズマ処理装置及び方法、ガス供給リング及び誘電体 |
JP2002057149A (ja) * | 2000-08-08 | 2002-02-22 | Tokyo Electron Ltd | 処理装置及びそのクリーニング方法 |
EP1340838A1 (en) * | 2000-11-14 | 2003-09-03 | Sekisui Chemical Co., Ltd. | Method and device for atmospheric plasma processing |
US20040014327A1 (en) * | 2002-07-18 | 2004-01-22 | Bing Ji | Method for etching high dielectric constant materials and for cleaning deposition chambers for high dielectric constant materials |
US7357138B2 (en) * | 2002-07-18 | 2008-04-15 | Air Products And Chemicals, Inc. | Method for etching high dielectric constant materials and for cleaning deposition chambers for high dielectric constant materials |
JP4283017B2 (ja) * | 2003-03-25 | 2009-06-24 | 富士通マイクロエレクトロニクス株式会社 | 半導体装置の製造方法 |
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KR20070086917A (ko) | 2007-08-27 |
TW200625442A (en) | 2006-07-16 |
US20080160777A1 (en) | 2008-07-03 |
EP1840946A1 (en) | 2007-10-03 |
JP2006179834A (ja) | 2006-07-06 |
WO2006068235A1 (ja) | 2006-06-29 |
TWI381438B (zh) | 2013-01-01 |
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