JP6936700B2 - 半導体製造装置及び半導体装置の製造方法 - Google Patents
半導体製造装置及び半導体装置の製造方法 Download PDFInfo
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- JP6936700B2 JP6936700B2 JP2017209918A JP2017209918A JP6936700B2 JP 6936700 B2 JP6936700 B2 JP 6936700B2 JP 2017209918 A JP2017209918 A JP 2017209918A JP 2017209918 A JP2017209918 A JP 2017209918A JP 6936700 B2 JP6936700 B2 JP 6936700B2
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
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Description
Claims (15)
- 処理室が設けられる容器と、
前記処理室の内部に設けられ、ケイ酸塩を含む高誘電率絶縁膜を有する半導体基板を保持するステージと、
前記処理室に反応性ガスを供給する第1の系統及び前記処理室に触媒性ガスを供給する第2の系統を有するガス供給ラインとを有し、
前記反応性ガスとして、前記高誘電率絶縁膜に含まれる金属元素と反応して揮発性の第1の有機金属錯体を形成する錯体化材料ガスと前記第1の有機金属錯体の安定性を高める錯体安定化材料ガスとを含む混合ガスを供給し、
前記触媒性ガスとして、前記高誘電率絶縁膜を変性し、前記第1の有機金属錯体の形成反応を促進する第2の有機金属錯体を原料とする触媒性ガスを供給し、
前記錯体安定化材料ガスの原料物質は、分子骨格内に不対電子を有する元素を2個以上持ち、かつ水素原子およびフッ素原子を除いて5個以上の原子を持つ有機化合物である半導体製造装置。
- 請求項1において、
前記高誘電率絶縁膜に含まれる金属元素は、周期表において第5周期およびそれ以後に分類される金属元素であり、
前記高誘電率絶縁膜は前記金属元素のケイ酸塩を含む半導体製造装置。 - 請求項1において、
前記高誘電率絶縁膜に含まれる金属元素は、希土類元素であり、
前記高誘電率絶縁膜は前記希土類元素のケイ酸塩を含む半導体製造装置。 - 請求項1において、
前記第1の系統は第1の気化器を有し、
前記第2の系統は第2の気化器を有し、
前記第1の気化器は、前記錯体化材料ガスの原料薬液と前記錯体安定化材料ガスの原料薬液との混合薬液を所定の温度、圧力条件下で気化させ、
前記第2の気化器は、前記第2の有機金属錯体を原料とする原料薬液を所定の温度、圧力条件下で気化させる半導体製造装置。 - ケイ酸塩を含む高誘電率絶縁膜上に所定のパターン形状を有するマスク層が形成された半導体基板を処理室に載置し、
前記半導体基板の表面に吸着されている気体や異物を脱離させ、
触媒性ガスを減圧加熱下で供給し、
前記触媒性ガスの供給停止後、前記半導体基板を冷却し、前記半導体基板の温度が所定の温度を下回った状態で、前記処理室に反応性ガスを供給し、
前記反応性ガスの供給を停止して、前記処理室内を減圧加熱し、
前記高誘電率絶縁膜に含まれる金属元素と反応して生じる第1の有機金属錯体を気化させて前記処理室より排気する半導体装置の製造方法。 - 請求項5において、
前記触媒性ガスは、前記高誘電率絶縁膜を変性し、前記第1の有機金属錯体の形成反応を促進する第2の有機金属錯体を原料とする触媒性ガスであり、
前記反応性ガスは、前記高誘電率絶縁膜に含まれる金属元素と反応して前記第1の有機金属錯体を形成する錯体化材料ガスと前記第1の有機金属錯体の安定性を高める錯体安定化材料ガスとを含む混合ガスであり、
前記錯体安定化材料ガスの原料物質は、分子骨格内に不対電子を有する元素を2個以上持ち、かつ水素原子およびフッ素原子を除いて5個以上の原子を持つ有機化合物である半導体装置の製造方法。
- 請求項5において、
前記高誘電率絶縁膜に含まれる金属元素は、周期表において第5周期およびそれ以後に分類される金属元素であり、
前記高誘電率絶縁膜は前記金属元素のケイ酸塩を含む半導体装置の製造方法。 - 請求項5において、
前記高誘電率絶縁膜に含まれる金属元素は、希土類元素であり、
前記高誘電率絶縁膜は前記希土類元素のケイ酸塩を含む半導体装置の製造方法。 - 請求項6において、
前記錯体化材料ガスの原料物質は、遷移金属原子に対して少なくとも2座以上の配位結合を形成し得る有機化合物、いわゆる多座配位子分子である半導体装置の製造方法。 - 請求項9において、
前記錯体化材料ガスの原料物質は、フッ素原子を含むジケトン類である半導体装置の製造方法。 - 請求項6において、
前記錯体安定化材料ガスの原料物質である有機化合物は、前記不対電子を有する元素として、酸素原子、窒素原子または硫黄原子を持つ半導体装置の製造方法。
- 請求項11において、
前記錯体安定化材料ガスの原料物質は、エーテル類である半導体装置の製造方法。 - 請求項6において、
前記第2の有機金属錯体は鉄族元素を含む有機金属錯体である半導体装置の製造方法。 - 請求項13において、
前記第2の有機金属錯体はコバルトを含む有機金属錯体である半導体装置の製造方法。 - 請求項13において、
前記第2の有機金属錯体はフッ素原子を含まない有機金属錯体である半導体装置の製造方法。
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US11037779B2 (en) * | 2017-12-19 | 2021-06-15 | Micron Technology, Inc. | Gas residue removal |
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WO2021192210A1 (ja) * | 2020-03-27 | 2021-09-30 | 株式会社日立ハイテク | 半導体製造方法 |
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