JP6817752B2 - エッチング方法およびエッチング装置 - Google Patents
エッチング方法およびエッチング装置 Download PDFInfo
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- H01L21/3105—After-treatment
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Description
表面の少なくとも一部に窒化チタン膜を有する基材に,水素およびフッ素を含む反応種を供給する第一工程と,
前記基材を真空加熱して,前記第一工程で前記窒化チタン膜の表面に生成された表面反応層を除去する第二工程と,を有することを特徴とするエッチング方法とする。
処理室と,
前記処理室内に設けられ,表面の少なくとも一部に窒化チタン膜を有する被処理体と,
前記被処理体を戴置するステージと,
前記処理室に水素およびフッ素を含むラジカルを供給するためのプラズマ源と,
前記処理室を減圧するための真空ポンプと,
前記水素およびフッ素を含むラジカルにより前記窒化チタン膜の表面に形成された表面反応層を除去するために前記被処理体を加熱するための加熱手段と,を有することを特徴とするエッチング装置とする。
具体的には,まずエッチングすべき窒化チタン膜が形成されたウェハ318が,図示しないウェハ搬送装置によってウェハ搬送口119から搬入されて,ウェハステージ102上に戴置される(図10及び図8のステップS101参照)。この時,ウェハステージ102の温度は,熱電モジュール195によって−20℃に制御されており,ウェハ温度は−20℃に冷却される。その後,ウェハ搬送口119が閉じられて処理室101が気密に維持された状態で,処理室101が真空ポンプ108によって可変コンダクタンスバルブ107を介して排気される(図10参照)。
Claims (15)
- 窒化チタン膜をエッチングするエッチング方法において,
表面の少なくとも一部に窒化チタン膜を有する基材に,水素およびフッ素を含む反応種を供給する第一工程と,
前記基材を真空加熱して,前記第一工程で前記窒化チタン膜の表面に生成された表面反応層を除去する第二工程と,を有することを特徴とするエッチング方法。 - 請求項1に記載のエッチング方法において,
前記第一工程と前記第二工程との組合せを1サイクルとして複数サイクル繰り返すことを特徴とするエッチング方法。 - 請求項1又は2に記載のエッチング方法において,
前記反応種が,水素を構成要素とする物質とフッ素を構成要素とする物質を含む処理ガスのプラズマにより生成されることを特徴とするエッチング方法。 - 表面の少なくとも一部に窒化チタン膜を有する基材に,水素,酸素,およびフッ素を含む反応種を供給する第一工程と,前記基材を真空加熱して,前記第一工程で前記窒化チタン膜の表面に生成された表面反応層を除去する第二工程との組合せを1サイクルとして複数サイクル繰り返すことにより,前記窒化チタン膜をエッチングすることを特徴とするエッチング方法。
- 請求項4に記載のエッチング方法において,
前記反応種が,水素を構成要素とする物質と酸素を構成要素とする物質とフッ素を構成要素とする物質を含む処理ガスのプラズマにより生成されることを特徴とするエッチング方法。 - 請求項1乃至5のいずれか一項に記載のエッチング方法において,
前記反応種が,塩素を構成要素とする物質を含まない処理ガスのプラズマにより生成されることを特徴とするエッチング方法。 - 請求項1乃至6のいずれか一項に記載のエッチング方法において,
前記反応種が,窒素を構成要素とする物質を含まない処理ガスのプラズマにより生成されることを特徴とするエッチング方法。 - 請求項1乃至7のいずれか一項に記載のエッチング方法において,
前記表面反応層が,水素と結合した窒素,およびフッ素と結合したチタンを主として含有することを特徴とするエッチング方法。 - 請求項1乃至8のいずれか一項に記載のエッチング方法において,
前記表面反応層が,チタン弗化アンモニウムを主たる成分とすることを特徴とするエッチング方法。 - 請求項1乃至9のいずれか一項に記載のエッチング方法において,
前記基材の真空加熱時の温度が100℃以上であることを特徴とするエッチング方法。 - 請求項1乃至9のいずれか一項に記載のエッチング方法において,
前記基材の真空加熱時の真空度が100Pa以下であることを特徴とするエッチング方法。 - 請求項1乃至11のいずれか一項に記載のエッチング方法において,
前記表面反応層の生成量が,前記第一工程の処理時間に対して飽和性を持つことを特徴とするエッチング方法。 - 窒化チタン膜をエッチングするエッチング装置において,
処理室と,
前記処理室内に設けられ,表面の少なくとも一部に窒化チタン膜を有する被処理体と,
前記被処理体を戴置するステージと,
前記処理室に水素およびフッ素を含むラジカルを供給するためのプラズマ源と,
前記処理室を減圧するための真空ポンプと,
前記水素およびフッ素を含むラジカルにより前記窒化チタン膜の表面に形成された表面反応層を除去するために前記被処理体を加熱するための加熱手段と,を有し、
前記被処理体を加熱するための加熱手段が,赤外線ランプであることを特徴とするエッチング装置。 - 請求項13に記載のエッチング装置において,
前記ラジカルは酸素ラジカルを含み,塩素ラジカルおよび窒素ラジカルを含まないことを特徴とするエッチング装置。 - 窒化チタン膜をエッチングするエッチング装置において,
処理室と,
前記処理室内に設けられ,表面の少なくとも一部に窒化チタン膜を有する被処理体と,
前記被処理体を戴置するステージと,
前記処理室に水素およびフッ素を含むラジカルを供給するためのプラズマ源と,
前記処理室を減圧するための真空ポンプと,
前記水素およびフッ素を含むラジカルにより前記窒化チタン膜の表面に形成された表面反応層を除去するために前記被処理体を加熱するための加熱手段と,を有し、
前記ラジカルは酸素ラジカルを含み,塩素ラジカルおよび窒素ラジカルを含まないことを特徴とするエッチング装置。
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JP2016176198A JP6817752B2 (ja) | 2016-09-09 | 2016-09-09 | エッチング方法およびエッチング装置 |
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TW106129551A TWI648786B (zh) | 2016-09-09 | 2017-08-30 | 蝕刻方法及蝕刻裝置 |
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JP6980406B2 (ja) * | 2017-04-25 | 2021-12-15 | 株式会社日立ハイテク | 半導体製造装置及び半導体装置の製造方法 |
JP6936700B2 (ja) | 2017-10-31 | 2021-09-22 | 株式会社日立ハイテク | 半導体製造装置及び半導体装置の製造方法 |
WO2019199922A1 (en) * | 2018-04-13 | 2019-10-17 | Mattson Technology, Inc. | Processing of workpieces with reactive species generated using alkyl halide |
WO2020100227A1 (ja) * | 2018-11-14 | 2020-05-22 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置及びそれを用いた被処理試料の処理方法 |
WO2020165990A1 (ja) | 2019-02-14 | 2020-08-20 | 株式会社日立ハイテクノロジーズ | 半導体製造装置 |
CN114342046A (zh) * | 2019-09-19 | 2022-04-12 | 株式会社国际电气 | 半导体装置的制造方法、记录介质和基板处理装置 |
JP7114554B2 (ja) * | 2019-11-22 | 2022-08-08 | 株式会社Kokusai Electric | 基板処理方法、半導体装置の製造方法、基板処理装置、およびプログラム |
WO2021202229A1 (en) * | 2020-03-31 | 2021-10-07 | Mattson Technology, Inc. | Processing of workpieces using fluorocarbon plasma |
CN113785382B (zh) * | 2020-04-10 | 2023-10-27 | 株式会社日立高新技术 | 蚀刻方法 |
US11626271B2 (en) | 2020-06-18 | 2023-04-11 | Tokyo Electron Limited | Surface fluorination remediation for aluminium oxide electrostatic chucks |
CN114097064A (zh) | 2020-06-25 | 2022-02-25 | 株式会社日立高新技术 | 真空处理方法 |
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US20230010978A1 (en) * | 2021-07-12 | 2023-01-12 | Applied Materials, Inc. | Selective removal of transition metal nitride materials |
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US6004884A (en) * | 1996-02-15 | 1999-12-21 | Lam Research Corporation | Methods and apparatus for etching semiconductor wafers |
US6531404B1 (en) * | 2000-08-04 | 2003-03-11 | Applied Materials Inc. | Method of etching titanium nitride |
US20060016783A1 (en) | 2004-07-22 | 2006-01-26 | Dingjun Wu | Process for titanium nitride removal |
JP2006120983A (ja) * | 2004-10-25 | 2006-05-11 | Hitachi High-Technologies Corp | プラズマエッチング方法 |
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JP6342670B2 (ja) | 2014-02-17 | 2018-06-13 | 株式会社日立国際電気 | クリーニング方法、半導体装置の製造方法、基板処理装置及びプログラム |
JP2015185594A (ja) * | 2014-03-20 | 2015-10-22 | 株式会社日立ハイテクノロジーズ | エッチング装置 |
US9589979B2 (en) * | 2014-11-19 | 2017-03-07 | Macronix International Co., Ltd. | Vertical and 3D memory devices and methods of manufacturing the same |
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