JP7161024B2 - 熱原子層エッチングプロセス - Google Patents
熱原子層エッチングプロセス Download PDFInfo
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- JP7161024B2 JP7161024B2 JP2021214437A JP2021214437A JP7161024B2 JP 7161024 B2 JP7161024 B2 JP 7161024B2 JP 2021214437 A JP2021214437 A JP 2021214437A JP 2021214437 A JP2021214437 A JP 2021214437A JP 7161024 B2 JP7161024 B2 JP 7161024B2
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
- C23F4/02—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00 by evaporation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
- C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
- C09K13/10—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a boron compound
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/12—Gaseous compositions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
- H01L21/31122—Etching inorganic layers by chemical means by dry-etching of layers not containing Si, e.g. PZT, Al2O3
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31127—Etching organic layers
- H01L21/31133—Etching organic layers by chemical means
- H01L21/31138—Etching organic layers by chemical means by dry-etching
Description
本出願は、2016年12月9日出願の米国仮特許出願第62/432,318号、2017年1月24日出願の米国仮特許出願第62/449,945号、2017年2月7日出願の米国仮特許出願第62/455,989号、および2017年4月13日出願の米国仮特許出願第62/485,330号の優先権を主張するものである。
本出願は、エッチングプロセス、より具体的には、逐次反応を用いた熱原子層エッチングプロセスに関する。
いくつかの実施形態では、第一の気相ハロゲン化物反応物質は、金属ハロゲン化物を含む。いくつかの実施形態では、金属は、Nb、Ta、Mo、Sn、V、Re、W、または第5族または6族の遷移金属を含む。いくつかの実施形態では、第一の気相ハロゲン化物反応物質は、SbまたはTeを含む。いくつかの実施形態では、ハロゲン化物は、塩化物、フッ化物、臭化物、またはヨウ化物を含む。いくつかの実施形態では、第一の気相ハロゲン化物反応物質は、NbF5を含む。
Claims (3)
- 化学原子層エッチングによって反応チャンバー内の基材の表面上の遷移金属を含む膜をエッチングする方法であって、前記方法が、一つ以上のエッチングサイクルを含み、各サイクルが、
第一の気相反応物質が前記基材表面上の分子と反応して基材の表面上に反応物質種を形成するように、前記基材を前記第一の気相反応物質に曝すこと、および
続いて、前記反応物質種が揮発性反応生成物に変換され、前記膜の一部が前記基材表面から除去されるように、前記基材を第二の気相反応物質に曝露することであって、前記基材が前記エッチングサイクル中にプラズマ反応物質と接触しない、前記第一の気相反応物質がCSe2を含む、曝露すること、を含む、方法。 - 化学原子層エッチングによって反応チャンバー内の基材の表面上の遷移金属を含む膜をエッチングする方法であって、前記方法が、一つ以上のエッチングサイクルを含み、各サイクルが、
第一の気相反応物質が前記基材表面上の分子と反応して基材の表面上に反応物質種を形成するように、前記基材を前記第一の気相反応物質に曝すこと、および
続いて、前記反応物質種が揮発性反応生成物に変換され、前記膜の一部が前記基材表面から除去されるように、前記基材を第二の気相反応物質に曝露することであって、前記基材が前記エッチングサイクル中にプラズマ反応物質と接触しない、前記第一の気相反応物質が、S=R=S構造を有する化合物を含み、ここで、Rが炭素であり、またはC2-C8の炭化水素である、曝露すること、を含む、方法。 - 前記第一の気相反応物質はCS2を含む、請求項2に記載の方法。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2022163420A JP7470763B2 (ja) | 2016-12-09 | 2022-10-11 | 熱原子層エッチングプロセス |
JP2023134806A JP2023159315A (ja) | 2016-12-09 | 2023-08-22 | 熱原子層エッチングプロセス |
Applications Claiming Priority (10)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201662432318P | 2016-12-09 | 2016-12-09 | |
US62/432,318 | 2016-12-09 | ||
US201762449945P | 2017-01-24 | 2017-01-24 | |
US62/449,945 | 2017-01-24 | ||
US201762455989P | 2017-02-07 | 2017-02-07 | |
US62/455,989 | 2017-02-07 | ||
US201762485330P | 2017-04-13 | 2017-04-13 | |
US62/485,330 | 2017-04-13 | ||
PCT/US2017/065170 WO2018106955A1 (en) | 2016-12-09 | 2017-12-07 | Thermal atomic layer etching processes |
JP2019530792A JP7062658B2 (ja) | 2016-12-09 | 2017-12-07 | 熱原子層エッチングプロセス |
Related Parent Applications (1)
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JP2019530792A Division JP7062658B2 (ja) | 2016-12-09 | 2017-12-07 | 熱原子層エッチングプロセス |
Related Child Applications (1)
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JP2022163420A Division JP7470763B2 (ja) | 2016-12-09 | 2022-10-11 | 熱原子層エッチングプロセス |
Publications (2)
Publication Number | Publication Date |
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JP2022043274A JP2022043274A (ja) | 2022-03-15 |
JP7161024B2 true JP7161024B2 (ja) | 2022-10-25 |
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Application Number | Title | Priority Date | Filing Date |
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JP2019530792A Active JP7062658B2 (ja) | 2016-12-09 | 2017-12-07 | 熱原子層エッチングプロセス |
JP2021214437A Active JP7161024B2 (ja) | 2016-12-09 | 2021-12-28 | 熱原子層エッチングプロセス |
JP2022163420A Active JP7470763B2 (ja) | 2016-12-09 | 2022-10-11 | 熱原子層エッチングプロセス |
JP2023134806A Pending JP2023159315A (ja) | 2016-12-09 | 2023-08-22 | 熱原子層エッチングプロセス |
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JP2019530792A Active JP7062658B2 (ja) | 2016-12-09 | 2017-12-07 | 熱原子層エッチングプロセス |
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Application Number | Title | Priority Date | Filing Date |
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JP2022163420A Active JP7470763B2 (ja) | 2016-12-09 | 2022-10-11 | 熱原子層エッチングプロセス |
JP2023134806A Pending JP2023159315A (ja) | 2016-12-09 | 2023-08-22 | 熱原子層エッチングプロセス |
Country Status (6)
Country | Link |
---|---|
US (10) | US10280519B2 (ja) |
JP (4) | JP7062658B2 (ja) |
KR (6) | KR102410571B1 (ja) |
CN (2) | CN110050331B (ja) |
TW (6) | TWI773405B (ja) |
WO (1) | WO2018106955A1 (ja) |
Families Citing this family (38)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10115601B2 (en) * | 2016-02-03 | 2018-10-30 | Tokyo Electron Limited | Selective film formation for raised and recessed features using deposition and etching processes |
CN110050331B (zh) | 2016-12-09 | 2023-07-25 | Asm Ip 控股有限公司 | 热原子层蚀刻工艺 |
US10283319B2 (en) | 2016-12-22 | 2019-05-07 | Asm Ip Holding B.V. | Atomic layer etching processes |
JP6980406B2 (ja) * | 2017-04-25 | 2021-12-15 | 株式会社日立ハイテク | 半導体製造装置及び半導体装置の製造方法 |
MX2019013111A (es) | 2017-05-05 | 2019-12-16 | Quantum Si Inc | Sustratos que tienen reactividad de superficie modificada y propiedades antiincrustantes en reacciones biologicas. |
JP6936700B2 (ja) * | 2017-10-31 | 2021-09-22 | 株式会社日立ハイテク | 半導体製造装置及び半導体装置の製造方法 |
KR102016927B1 (ko) * | 2017-11-01 | 2019-10-21 | 한국기초과학지원연구원 | 원자층 연마 방법 및 이를 위한 연마 장치 |
WO2019118684A1 (en) * | 2017-12-14 | 2019-06-20 | Applied Materials, Inc. | Methods of etching metal oxides with less etch residue |
US11205700B2 (en) * | 2018-07-16 | 2021-12-21 | Taiwan Semiconductor Manufacturing Co., Ltd. | Air gap spacer and related methods |
US11387112B2 (en) * | 2018-10-04 | 2022-07-12 | Tokyo Electron Limited | Surface processing method and processing system |
JP2022516772A (ja) * | 2019-01-15 | 2022-03-02 | ラム リサーチ コーポレーション | 金属原子層のエッチング堆積装置および金属フリー配位子による処理 |
KR20200096406A (ko) * | 2019-02-01 | 2020-08-12 | 주식회사 히타치하이테크 | 에칭 방법 및 플라스마 처리 장치 |
US11380523B2 (en) | 2019-02-14 | 2022-07-05 | Hitachi High-Tech Corporation | Semiconductor manufacturing apparatus |
JP2020136602A (ja) * | 2019-02-25 | 2020-08-31 | 株式会社Adeka | エッチング方法 |
JP7193731B2 (ja) * | 2019-03-29 | 2022-12-21 | 東京エレクトロン株式会社 | エッチング方法及びエッチング装置 |
CN113728126A (zh) * | 2019-05-15 | 2021-11-30 | 昭和电工株式会社 | 金属除去方法、干蚀刻方法和半导体元件的制造方法 |
TW202322215A (zh) * | 2019-06-11 | 2023-06-01 | 美商應用材料股份有限公司 | 使用氟及金屬鹵化物來蝕刻金屬氧化物 |
JP2021019201A (ja) | 2019-07-18 | 2021-02-15 | エーエスエム アイピー ホールディング ビー.ブイ. | 半導体処理システム用シャワーヘッドデバイス |
JP2022551523A (ja) * | 2019-10-11 | 2022-12-09 | クアンタム-エスアイ インコーポレイテッド | 気相における表面修飾 |
US11574813B2 (en) | 2019-12-10 | 2023-02-07 | Asm Ip Holding B.V. | Atomic layer etching |
US20210225633A1 (en) * | 2020-01-17 | 2021-07-22 | Asm Ip Holding B.V. | FORMATION OF SiOCN THIN FILMS |
JP7096279B2 (ja) | 2020-03-25 | 2022-07-05 | 株式会社Kokusai Electric | 半導体装置の製造方法、基板処理装置、プログラム、および基板処理方法 |
TW202208665A (zh) | 2020-04-24 | 2022-03-01 | 荷蘭商Asm Ip私人控股有限公司 | 用於填充半導體基板上之三維結構中的間隙之方法 |
CN114126731A (zh) * | 2020-05-29 | 2022-03-01 | 昭和电工株式会社 | 干蚀刻方法、半导体元件的制造方法和清洁方法 |
CN113838744A (zh) | 2020-06-24 | 2021-12-24 | Asm Ip私人控股有限公司 | 区域选择性有机材料去除 |
US11545397B2 (en) * | 2020-07-15 | 2023-01-03 | Taiwan Semiconductor Manufacturing Co., Ltd. | Spacer structure for semiconductor device and method for forming the same |
JP7174016B2 (ja) * | 2020-07-16 | 2022-11-17 | 株式会社Kokusai Electric | 基板処理方法、半導体装置の製造方法、基板処理装置、およびプログラム |
WO2022050099A1 (ja) * | 2020-09-01 | 2022-03-10 | 株式会社Adeka | エッチング方法 |
US20230335378A1 (en) * | 2020-09-18 | 2023-10-19 | Lam Research Corporation | Passivation chemistry for plasma etching |
US11488835B2 (en) * | 2020-11-20 | 2022-11-01 | Applied Materials, Inc. | Systems and methods for tungsten-containing film removal |
US20230027528A1 (en) * | 2020-12-10 | 2023-01-26 | Hitachi High-Tech Corporation | Semiconductor manufacturing method and semiconductor manufacturing apparatus |
JP2022129872A (ja) * | 2021-02-25 | 2022-09-06 | 株式会社Screenホールディングス | 基板処理方法および基板処理装置 |
EP4053879A1 (en) * | 2021-03-01 | 2022-09-07 | Imec VZW | Deposition of highly crystalline 2d materials |
US11462414B2 (en) * | 2021-03-08 | 2022-10-04 | Tokyo Electron Limited | Atomic layer etching of metal oxides |
CN112986482B (zh) * | 2021-03-11 | 2023-07-07 | 中国电子科技集团公司第四十六研究所 | 用于氮化铝单晶抛光片(0001)面的极性面区分方法 |
KR20220166786A (ko) * | 2021-06-09 | 2022-12-19 | 주식회사 히타치하이테크 | 반도체 제조 방법 및 반도체 제조 장치 |
WO2023107867A1 (en) * | 2021-12-08 | 2023-06-15 | Lam Research Corporation | Control of etch profiles in high aspect ratio holes via thermal atomic layer etching |
WO2023150520A1 (en) * | 2022-02-03 | 2023-08-10 | Merck Patent Gmbh | Atomic layer etching of metals using co-reactants as halogenating agents |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2015032597A (ja) | 2013-07-31 | 2015-02-16 | 日本ゼオン株式会社 | プラズマエッチング方法 |
JP2015533029A (ja) | 2012-10-30 | 2015-11-16 | レール・リキード−ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード | 高アスペクト比酸化物エッチング用のフルオロカーボン分子 |
WO2016172740A3 (en) | 2015-11-10 | 2017-01-19 | L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude | Etching reactants and plasma-free oxide etching processes using the same |
Family Cites Families (69)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4255230A (en) * | 1980-02-22 | 1981-03-10 | Eaton Corporation | Plasma etching process |
JPH0387026A (ja) * | 1988-12-13 | 1991-04-11 | Fujitsu Ltd | 半導体装置の製造方法 |
JPH05206088A (ja) * | 1992-01-29 | 1993-08-13 | Fujikura Ltd | 半導体の加工方法 |
JP2682479B2 (ja) * | 1994-12-26 | 1997-11-26 | 日本電気株式会社 | ドライエッチング方法 |
KR970009860A (ko) | 1995-08-07 | 1997-03-27 | 장수영 | 압축에 의한 습기 제거 방법 |
US5626775A (en) * | 1996-05-13 | 1997-05-06 | Air Products And Chemicals, Inc. | Plasma etch with trifluoroacetic acid and derivatives |
US5998297A (en) * | 1996-10-23 | 1999-12-07 | Texas Instruments Incorporated | Method of etching copper or copper-doped aluminum |
JP3750231B2 (ja) | 1996-11-20 | 2006-03-01 | ソニー株式会社 | 積層配線の形成方法 |
WO2001012873A1 (en) | 1999-08-17 | 2001-02-22 | Tokyo Electron Limited | Pulsed plasma processing method and apparatus |
JP2004063633A (ja) * | 2002-07-26 | 2004-02-26 | Fujitsu Ltd | 半導体レーザの製造方法 |
US7601223B2 (en) | 2003-04-29 | 2009-10-13 | Asm International N.V. | Showerhead assembly and ALD methods |
US7537662B2 (en) | 2003-04-29 | 2009-05-26 | Asm International N.V. | Method and apparatus for depositing thin films on a surface |
US20050103265A1 (en) | 2003-11-19 | 2005-05-19 | Applied Materials, Inc., A Delaware Corporation | Gas distribution showerhead featuring exhaust apertures |
KR20060098522A (ko) | 2005-03-03 | 2006-09-19 | 삼성전자주식회사 | 유기 박막 트랜지스터 표시판 및 그 제조 방법 |
JP4506677B2 (ja) | 2005-03-11 | 2010-07-21 | 東京エレクトロン株式会社 | 成膜方法、成膜装置及び記憶媒体 |
US7211477B2 (en) | 2005-05-06 | 2007-05-01 | Freescale Semiconductor, Inc. | High voltage field effect device and method |
KR100707983B1 (ko) | 2005-11-28 | 2007-04-16 | 주식회사 에이이티 | 산화막의 원자층 에칭방법 |
JP4866898B2 (ja) | 2006-03-30 | 2012-02-01 | 三井造船株式会社 | 原子層成長装置 |
US7435484B2 (en) | 2006-09-01 | 2008-10-14 | Asm Japan K.K. | Ruthenium thin film-formed structure |
US20090088547A1 (en) | 2006-10-17 | 2009-04-02 | Rpo Pty Limited | Process for producing polysiloxanes and use of the same |
US7911001B2 (en) | 2007-07-15 | 2011-03-22 | Samsung Electronics Co., Ltd. | Methods for forming self-aligned dual stress liners for CMOS semiconductor devices |
DE102008037951B4 (de) * | 2008-08-14 | 2018-02-15 | Nawotec Gmbh | Verfahren und Vorrichtung zum elektronenstrahlinduzierten Ätzen von mit Gallium verunreinigten Schichten |
KR20110098355A (ko) * | 2010-02-26 | 2011-09-01 | 성균관대학교산학협력단 | 중성빔 식각 장치를 이용한 원자층 식각 방법 |
GB2480228B (en) | 2010-03-08 | 2015-05-20 | Gskolen I Buskerud Og Vestfold H | Speckle reduction |
US8869742B2 (en) | 2010-08-04 | 2014-10-28 | Lam Research Corporation | Plasma processing chamber with dual axial gas injection and exhaust |
US9184028B2 (en) | 2010-08-04 | 2015-11-10 | Lam Research Corporation | Dual plasma volume processing apparatus for neutral/ion flux control |
US20130312663A1 (en) | 2012-05-22 | 2013-11-28 | Applied Microstructures, Inc. | Vapor Delivery Apparatus |
JP6297269B2 (ja) | 2012-06-28 | 2018-03-20 | ローム アンド ハース エレクトロニック マテリアルズ エルエルシーRohm and Haas Electronic Materials LLC | ポリマー組成物、このポリマー組成物を含むフォトレジスト、およびこのフォトレジストを含むコーティングされた物品 |
US9132436B2 (en) | 2012-09-21 | 2015-09-15 | Applied Materials, Inc. | Chemical control features in wafer process equipment |
WO2014094103A1 (en) | 2012-12-18 | 2014-06-26 | Seastar Chemicals Inc. | Process and method for in-situ dry cleaning of thin film deposition reactors and thin film layers |
US8894870B2 (en) * | 2013-02-01 | 2014-11-25 | Asm Ip Holding B.V. | Multi-step method and apparatus for etching compounds containing a metal |
US9447497B2 (en) | 2013-03-13 | 2016-09-20 | Applied Materials, Inc. | Processing chamber gas delivery system with hot-swappable ampoule |
TWI591211B (zh) * | 2013-03-13 | 2017-07-11 | 應用材料股份有限公司 | 蝕刻包含過渡金屬的膜之方法 |
KR101465338B1 (ko) | 2013-06-07 | 2014-11-25 | 성균관대학교산학협력단 | 산화 알루미늄에 대한 저손상 원자층 식각 방법 |
TWI612182B (zh) * | 2013-09-09 | 2018-01-21 | 液態空氣喬治斯克勞帝方法研究開發股份有限公司 | 用蝕刻氣體蝕刻半導體結構的方法 |
TW201525173A (zh) | 2013-12-09 | 2015-07-01 | Applied Materials Inc | 選擇性層沉積之方法 |
WO2015160412A2 (en) | 2014-01-24 | 2015-10-22 | The Regents Of The University Of Colorado | Novel methods of preparing nanodevices |
WO2015142954A1 (en) | 2014-03-18 | 2015-09-24 | The Regents Of The University Of California | Metal-organic frameworks characterized by having a large number of adsorption sites per unit volume |
US9257638B2 (en) * | 2014-03-27 | 2016-02-09 | Lam Research Corporation | Method to etch non-volatile metal materials |
US9637823B2 (en) | 2014-03-31 | 2017-05-02 | Asm Ip Holding B.V. | Plasma atomic layer deposition |
WO2015153742A1 (en) | 2014-04-01 | 2015-10-08 | Montana State University | Process of converting natural plant oils to biofuels |
CN105448635B (zh) * | 2014-08-28 | 2018-01-09 | 北京北方华创微电子装备有限公司 | 原子层刻蚀装置及采用其的原子层刻蚀方法 |
US9624578B2 (en) | 2014-09-30 | 2017-04-18 | Lam Research Corporation | Method for RF compensation in plasma assisted atomic layer deposition |
WO2016100873A1 (en) * | 2014-12-18 | 2016-06-23 | The Regents Of The University Of Colorado, A Body Corporate | Novel methods of atomic layer etching (ale) using sequential, self-limiting thermal reactions |
US9425041B2 (en) | 2015-01-06 | 2016-08-23 | Lam Research Corporation | Isotropic atomic layer etch for silicon oxides using no activation |
US9396956B1 (en) | 2015-01-16 | 2016-07-19 | Asm Ip Holding B.V. | Method of plasma-enhanced atomic layer etching |
JP2016134569A (ja) | 2015-01-21 | 2016-07-25 | 株式会社東芝 | 半導体製造装置 |
JP6532066B2 (ja) | 2015-03-30 | 2019-06-19 | 東京エレクトロン株式会社 | 原子層をエッチングする方法 |
US9502238B2 (en) | 2015-04-03 | 2016-11-22 | Lam Research Corporation | Deposition of conformal films by atomic layer deposition and atomic layer etch |
US9806252B2 (en) * | 2015-04-20 | 2017-10-31 | Lam Research Corporation | Dry plasma etch method to pattern MRAM stack |
TW202336855A (zh) | 2015-06-05 | 2023-09-16 | 美商蘭姆研究公司 | GaN及其他Ⅲ-Ⅴ族材料之原子層蝕刻 |
WO2017099718A1 (en) | 2015-12-08 | 2017-06-15 | Intel Corporation | Atomic layer etching of transition metals by halogen surface oxidation |
US9735024B2 (en) | 2015-12-28 | 2017-08-15 | Asm Ip Holding B.V. | Method of atomic layer etching using functional group-containing fluorocarbon |
US10982336B2 (en) | 2016-04-01 | 2021-04-20 | Wayne State University | Method for etching a metal surface |
US20200313093A1 (en) | 2016-05-20 | 2020-10-01 | Brown University | Method for Manufacturing Perovskite Solar Cells and Multijunction Photovoltaics |
WO2017213842A2 (en) | 2016-05-23 | 2017-12-14 | The Regents Of The University Of Colorado, A Body Corporate | Enhancement of thermal atomic layer etching |
WO2017205658A1 (en) | 2016-05-25 | 2017-11-30 | The Regents Of The University Of Colorado, A Body Corporate | Atomic layer etching on microdevices and nanodevices |
US20170345665A1 (en) | 2016-05-26 | 2017-11-30 | Tokyo Electron Limited | Atomic layer etching systems and methods |
JP6766184B2 (ja) | 2016-06-03 | 2020-10-07 | インテグリス・インコーポレーテッド | ハフニア及びジルコニアの蒸気相エッチング |
US20180080124A1 (en) | 2016-09-19 | 2018-03-22 | Applied Materials, Inc. | Methods and systems for thermal ale and ald |
JP2020502360A (ja) | 2016-10-25 | 2020-01-23 | ビーエーエスエフ ソシエタス・ヨーロピアBasf Se | ケイ素含有薄膜の生成方法 |
CN110050331B (zh) | 2016-12-09 | 2023-07-25 | Asm Ip 控股有限公司 | 热原子层蚀刻工艺 |
US11581186B2 (en) | 2016-12-15 | 2023-02-14 | Asm Ip Holding B.V. | Sequential infiltration synthesis apparatus |
US10283319B2 (en) | 2016-12-22 | 2019-05-07 | Asm Ip Holding B.V. | Atomic layer etching processes |
WO2019034994A1 (en) | 2017-08-16 | 2019-02-21 | 3M Innovative Properties Company | POLYMER IONOMER SEPARATION MEMBRANES AND METHODS OF USE |
CN112840039A (zh) | 2018-10-05 | 2021-05-25 | 朗姆研究公司 | 处理室表面移除金属污染物 |
JP2021019201A (ja) | 2019-07-18 | 2021-02-15 | エーエスエム アイピー ホールディング ビー.ブイ. | 半導体処理システム用シャワーヘッドデバイス |
JP2021019202A (ja) | 2019-07-18 | 2021-02-15 | エーエスエム アイピー ホールディング ビー.ブイ. | 中間チャンバーを備える半導体気相エッチング装置 |
US11574813B2 (en) | 2019-12-10 | 2023-02-07 | Asm Ip Holding B.V. | Atomic layer etching |
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Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2015533029A (ja) | 2012-10-30 | 2015-11-16 | レール・リキード−ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード | 高アスペクト比酸化物エッチング用のフルオロカーボン分子 |
JP2015032597A (ja) | 2013-07-31 | 2015-02-16 | 日本ゼオン株式会社 | プラズマエッチング方法 |
WO2016172740A3 (en) | 2015-11-10 | 2017-01-19 | L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude | Etching reactants and plasma-free oxide etching processes using the same |
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