ATE368756T1 - Verfahren zum aufbringen von silizium mit hoher rate bei niedrigen druck - Google Patents

Verfahren zum aufbringen von silizium mit hoher rate bei niedrigen druck

Info

Publication number
ATE368756T1
ATE368756T1 AT99949661T AT99949661T ATE368756T1 AT E368756 T1 ATE368756 T1 AT E368756T1 AT 99949661 T AT99949661 T AT 99949661T AT 99949661 T AT99949661 T AT 99949661T AT E368756 T1 ATE368756 T1 AT E368756T1
Authority
AT
Austria
Prior art keywords
rate
gas
substrate
deposition
combination
Prior art date
Application number
AT99949661T
Other languages
English (en)
Inventor
Robert Cook
Daniel Brors
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Application granted granted Critical
Publication of ATE368756T1 publication Critical patent/ATE368756T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45502—Flow conditions in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45572—Cooled nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)
  • Formation Of Insulating Films (AREA)
AT99949661T 1998-09-16 1999-09-15 Verfahren zum aufbringen von silizium mit hoher rate bei niedrigen druck ATE368756T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10059498P 1998-09-16 1998-09-16

Publications (1)

Publication Number Publication Date
ATE368756T1 true ATE368756T1 (de) 2007-08-15

Family

ID=22280545

Family Applications (1)

Application Number Title Priority Date Filing Date
AT99949661T ATE368756T1 (de) 1998-09-16 1999-09-15 Verfahren zum aufbringen von silizium mit hoher rate bei niedrigen druck

Country Status (5)

Country Link
EP (1) EP1123423B1 (de)
JP (1) JP2002525841A (de)
AT (1) ATE368756T1 (de)
DE (1) DE69936727D1 (de)
WO (1) WO2000015868A1 (de)

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US7622007B2 (en) 2003-08-07 2009-11-24 Hitachi Kokusai Electric Inc. Substrate processing apparatus and semiconductor device producing method
CN101684550B (zh) 2004-06-28 2012-04-11 剑桥纳米科技公司 设计为用于气相沉积系统中的阱
KR100573482B1 (ko) * 2004-06-29 2006-04-24 에스티마이크로일렉트로닉스 엔.브이. 반도체 소자의 폴리 실리콘막 형성방법
DE102004039443B4 (de) * 2004-08-13 2023-05-25 Beijing E-Town Semiconductor Technology, Co., Ltd. Verfahren zum thermischen Behandeln von scheibenförmigen Substraten
CN103901479B (zh) * 2014-03-18 2016-06-22 电子科技大学 三维声波近探头104通道的微弱信号同步采集与处理系统
US10796912B2 (en) 2017-05-16 2020-10-06 Lam Research Corporation Eliminating yield impact of stochastics in lithography
JP7653908B2 (ja) 2018-11-14 2025-03-31 ラム リサーチ コーポレーション 次世代リソグラフィにおいて有用なハードマスクを作製する方法
CN120762258A (zh) 2018-12-20 2025-10-10 朗姆研究公司 抗蚀剂的干式显影
TWI849083B (zh) 2019-03-18 2024-07-21 美商蘭姆研究公司 基板處理方法與設備
KR20210149893A (ko) 2019-04-30 2021-12-09 램 리써치 코포레이션 극자외선 리소그래피 레지스트 개선을 위한 원자 층 에칭 및 선택적인 증착 프로세스
TWI869221B (zh) 2019-06-26 2025-01-01 美商蘭姆研究公司 利用鹵化物化學品的光阻顯影
CN111048416A (zh) * 2019-12-25 2020-04-21 上海华力微电子有限公司 多晶硅薄膜的沉积方法
EP4651192A3 (de) 2020-01-15 2026-03-04 Lam Research Corporation Unterschicht für photoresisthaftung und dosisreduzierung
US12261044B2 (en) 2020-02-28 2025-03-25 Lam Research Corporation Multi-layer hardmask for defect reduction in EUV patterning
KR102601038B1 (ko) 2020-07-07 2023-11-09 램 리써치 코포레이션 방사선 포토레지스트 패터닝을 패터닝하기 위한 통합된 건식 프로세스
KR102673863B1 (ko) * 2020-11-13 2024-06-11 램 리써치 코포레이션 포토레지스트의 건식 제거를 위한 프로세스 툴
WO2022125388A1 (en) 2020-12-08 2022-06-16 Lam Research Corporation Photoresist development with organic vapor
TW202417971A (zh) 2022-07-01 2024-05-01 美商蘭姆研究公司 用於蝕刻停止阻遏之基於金屬氧化物的光阻之循環顯影
CN120958566A (zh) 2023-03-17 2025-11-14 朗姆研究公司 用于单一处理室中euv图案化的干法显影与蚀刻工艺的集成

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US4401687A (en) * 1981-11-12 1983-08-30 Advanced Semiconductor Materials America Plasma deposition of silicon
JPS6294922A (ja) * 1985-10-22 1987-05-01 Fuji Photo Film Co Ltd プラズマｃｖｄ法による製膜装置
JPS62230979A (ja) * 1986-03-31 1987-10-09 Canon Inc 堆積膜形成法
US4976996A (en) * 1987-02-17 1990-12-11 Lam Research Corporation Chemical vapor deposition reactor and method of use thereof
JPS63223178A (ja) * 1987-03-11 1988-09-16 Konica Corp アモルフアスシリコン系膜の製造方法
JPH0547673A (ja) * 1991-08-13 1993-02-26 Toshiba Corp 薄膜形成方法
JP3100702B2 (ja) * 1991-10-28 2000-10-23 株式会社東芝 減圧化学反応方法及びその装置
JPH08236458A (ja) * 1995-02-24 1996-09-13 Sumitomo Sitix Corp 半導体基板の製造方法
US5551985A (en) * 1995-08-18 1996-09-03 Torrex Equipment Corporation Method and apparatus for cold wall chemical vapor deposition

Also Published As

Publication number Publication date
JP2002525841A (ja) 2002-08-13
WO2000015868A1 (en) 2000-03-23
EP1123423A4 (de) 2005-05-11
EP1123423A1 (de) 2001-08-16
EP1123423B1 (de) 2007-08-01
DE69936727D1 (de) 2007-09-13

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