JP6517678B2 - 電子デバイスの製造方法 - Google Patents
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- 238000004519 manufacturing process Methods 0.000 title claims description 38
- 239000001257 hydrogen Substances 0.000 claims description 85
- 229910052739 hydrogen Inorganic materials 0.000 claims description 85
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 84
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 52
- 229910052799 carbon Inorganic materials 0.000 claims description 52
- 238000000034 method Methods 0.000 claims description 51
- 230000008569 process Effects 0.000 claims description 42
- 238000000137 annealing Methods 0.000 claims description 11
- 239000007789 gas Substances 0.000 claims description 9
- 229910003460 diamond Inorganic materials 0.000 claims description 8
- 239000010432 diamond Substances 0.000 claims description 8
- 230000008016 vaporization Effects 0.000 claims description 7
- 238000004544 sputter deposition Methods 0.000 claims description 5
- 238000005229 chemical vapour deposition Methods 0.000 claims description 4
- 230000008859 change Effects 0.000 claims description 3
- 239000007787 solid Substances 0.000 description 10
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 7
- 239000004642 Polyimide Substances 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 229920001721 polyimide Polymers 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 description 2
- 229920002457 flexible plastic Polymers 0.000 description 2
- -1 hydrogen ions Chemical class 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 239000002985 plastic film Substances 0.000 description 2
- 229920005575 poly(amic acid) Polymers 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 229910003481 amorphous carbon Inorganic materials 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- XKRFYHLGVUSROY-UHFFFAOYSA-N argon Substances [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
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- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/7806—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices involving the separation of the active layers from a substrate
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02115—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material being carbon, e.g. alpha-C, diamond or hydrogen doped carbon
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02527—Carbon, e.g. diamond-like carbon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68318—Auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
- H01L2221/68386—Separation by peeling
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/35—Mechanical effects
- H01L2924/351—Thermal stress
- H01L2924/3512—Cracking
- H01L2924/35121—Peeling or delaminating
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- Engineering & Computer Science (AREA)
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electroluminescent Light Sources (AREA)
- Chemical Vapour Deposition (AREA)
- Formation Of Insulating Films (AREA)
- Physical Vapour Deposition (AREA)
Description
<1.1 電子デバイス製造処理の全体の流れ>
図1〜図4は、電子デバイス130を製造する過程を模式的に示す側面図である。以下では、各図を参照しつつ、電子デバイス130を製造する際の全体の流れについて説明する。
上述したように、DLC層は、その層中の水素成分が気化されることにより基層110から電子デバイス130を剥離する剥離層として機能する。
図6は、第1処理例に係るDLC層120の膜厚と水素含有率との関係を示すグラフである。
図7は、第2処理例に係るDLC層120の膜厚と水素含有率との関係を示すグラフである。
図8は、第3処理例に係るDLC層120の膜厚と水素含有率との関係を示すグラフである。
図9は、第4処理例に係るDLC層120の膜厚と水素含有率との関係を示すグラフである。
図10は、第5処理例に係るDLC層120の膜厚と水素含有率との関係を示すグラフである。
以上、本発明の実施の形態について説明したが、この発明はその趣旨を逸脱しない限りにおいて上述したもの以外に種々の変更を行うことが可能である。
120 DLC層
121 第1領域
122 第2領域
123 第3領域
123A 部分領域
129 固形物
130 電子デバイス
131 支持層
132 バリア層
133 TFT回路層
200 積層体
Claims (7)
- チャンバー内に水素を含むガスを供給しながら、前記チャンバー内で基層の一方向側にダイヤモンドライクカーボン層を形成するダイヤモンドライクカーボン層形成工程と、
前記ダイヤモンドライクカーボン層の前記一方向側に電子デバイスを形成して、前記基層と前記ダイヤモンドライクカーボン層と前記電子デバイスとを有する積層体を得る電子デバイス形成工程と、
前記ダイヤモンドライクカーボン層中の水素成分を気化させて前記基層から前記電子デバイスを剥離する剥離工程と、
を備え、
前記ダイヤモンドライクカーボン層形成工程では、前記基層の前記一方向側に供給する炭素の供給量に対する前記水素の供給量の比率が調整され、
前記ダイヤモンドライクカーボン層形成工程では、前記比率が経時的に変化するように調整され、
前記ダイヤモンドライクカーボン層形成工程は、
前記ダイヤモンドライクカーボン層のうちの厚さ方向における前記基層側に位置する第1領域を形成する前期工程と、
前記ダイヤモンドライクカーボン層のうちの前記厚さ方向における中央側に位置する第2領域を形成する中期工程と、
前記ダイヤモンドライクカーボン層のうちの前記厚さ方向における前記電子デバイス側に位置する第3領域を形成する後期工程と、
を有し、
前記ダイヤモンドライクカーボン層形成工程では、前記比率が前記中期工程よりも前記前期工程および前記後期工程のうち少なくとも一方の工程において高くなるよう調整されることを特徴とする電子デバイスの製造方法。 - 請求項1に記載の電子デバイスの製造方法であって、
前記ダイヤモンドライクカーボン層形成工程では、前記比率が前記中期工程よりも前記前期工程において高くなるよう調整されることを特徴とする電子デバイスの製造方法。 - 請求項1に記載の電子デバイスの製造方法であって、
前記ダイヤモンドライクカーボン層形成工程では、前記比率が前記中期工程よりも前記後期工程において高くなるよう調整されることを特徴とする電子デバイスの製造方法。 - 請求項1に記載の電子デバイスの製造方法であって、
前記ダイヤモンドライクカーボン層形成工程では、前記比率が前記中期工程よりも前記前期工程および前記後期工程において高くなるよう調整されることを特徴とする電子デバイスの製造方法。 - 請求項1ないし請求項4のいずれかに記載の電子デバイスの製造方法であって、
前記ダイヤモンドライクカーボン層形成工程では、前記チャンバー内でスパッター処理を行うことにより前記基層の前記一方向側に前記ダイヤモンドライクカーボン層を形成することを特徴とする電子デバイスの製造方法。 - 請求項1ないし請求項4のいずれかに記載の電子デバイスの製造方法であって、
前記ダイヤモンドライクカーボン層形成工程では、前記チャンバー内で化学蒸着処理を行うことにより前記基層の前記一方向側に前記ダイヤモンドライクカーボン層を形成することを特徴とする電子デバイスの製造方法。 - 請求項1ないし請求項6のいずれかに記載の電子デバイスの製造方法であって、
前記剥離工程では前記ダイヤモンドライクカーボン層に対して前記基層側からフラッシュランプアニールを実行することを特徴とする電子デバイスの製造方法。
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JP2015242074A JP6517678B2 (ja) | 2015-12-11 | 2015-12-11 | 電子デバイスの製造方法 |
CN201611020516.8A CN107039327B (zh) | 2015-12-11 | 2016-11-17 | 电子元件的制造方法及层叠体 |
KR1020160153289A KR101930140B1 (ko) | 2015-12-11 | 2016-11-17 | 전자 디바이스의 제조 방법 및 적층체 |
TW105137719A TWI705479B (zh) | 2015-12-11 | 2016-11-18 | 電子元件的製造方法及積層體 |
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JP6517678B2 true JP6517678B2 (ja) | 2019-05-22 |
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JP2018117060A (ja) * | 2017-01-19 | 2018-07-26 | 株式会社ブイ・テクノロジー | 剥離基板及びレーザリフトオフ方法 |
KR102497780B1 (ko) * | 2017-12-15 | 2023-02-08 | 삼성디스플레이 주식회사 | 투명 표시 장치의 제조 방법 |
KR20210076999A (ko) | 2018-11-14 | 2021-06-24 | 램 리써치 코포레이션 | 차세대 리소그래피에서 유용한 하드 마스크들을 제조하기 위한 방법들 |
WO2020183588A1 (ja) * | 2019-03-11 | 2020-09-17 | シャープ株式会社 | 電子デバイスの製造方法 |
WO2020194737A1 (ja) * | 2019-03-28 | 2020-10-01 | シャープ株式会社 | 電子デバイスの製造方法および電子デバイス |
KR102539806B1 (ko) * | 2020-01-15 | 2023-06-05 | 램 리써치 코포레이션 | 포토레지스트 부착 및 선량 감소를 위한 하부층 |
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TW366367B (en) * | 1995-01-26 | 1999-08-11 | Ibm | Sputter deposition of hydrogenated amorphous carbon film |
EP1758169A3 (en) * | 1996-08-27 | 2007-05-23 | Seiko Epson Corporation | Exfoliating method, transferring method of thin film device, and thin film device, thin film integrated circuit device, and liquid crystal display device produced by the same |
US5942317A (en) * | 1997-01-31 | 1999-08-24 | International Business Machines Corporation | Hydrogenated carbon thin films |
US6338901B1 (en) * | 1999-05-03 | 2002-01-15 | Guardian Industries Corporation | Hydrophobic coating including DLC on substrate |
JP4727024B2 (ja) * | 2000-07-17 | 2011-07-20 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
JP4869471B2 (ja) * | 2000-07-17 | 2012-02-08 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
JP4380377B2 (ja) * | 2004-03-18 | 2009-12-09 | トヨタ自動車株式会社 | カーボン系膜形成方法 |
JP2006245235A (ja) * | 2005-03-02 | 2006-09-14 | Toyota Central Res & Dev Lab Inc | 構造体、並びに、それを用いた半導体素子放熱部材及び半導体装置 |
JP5352045B2 (ja) * | 2005-06-03 | 2013-11-27 | 株式会社半導体エネルギー研究所 | 集積回路装置の作製方法 |
JP5276792B2 (ja) * | 2006-03-03 | 2013-08-28 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
JP5053595B2 (ja) * | 2006-08-18 | 2012-10-17 | 正義 梅野 | Dlc膜の形成方法及びdlc膜の製造装置 |
JP5147794B2 (ja) * | 2009-08-04 | 2013-02-20 | 株式会社半導体エネルギー研究所 | 表示装置の作製方法及び電子書籍の作製方法 |
CN102013414A (zh) * | 2009-09-08 | 2011-04-13 | 群康科技(深圳)有限公司 | 软性显示器组件的制作方法 |
JP2013239650A (ja) * | 2012-05-16 | 2013-11-28 | Tokyo Ohka Kogyo Co Ltd | 支持体分離方法および支持体分離装置 |
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- 2016-11-17 CN CN201611020516.8A patent/CN107039327B/zh not_active Expired - Fee Related
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TW201735102A (zh) | 2017-10-01 |
TWI705479B (zh) | 2020-09-21 |
KR20170069919A (ko) | 2017-06-21 |
JP2017108053A (ja) | 2017-06-15 |
CN107039327B (zh) | 2020-02-07 |
CN107039327A (zh) | 2017-08-11 |
KR101930140B1 (ko) | 2018-12-17 |
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