JP7681106B2 - 有機蒸気によるフォトレジストの現像 - Google Patents

有機蒸気によるフォトレジストの現像 Download PDF

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Publication number
JP7681106B2
JP7681106B2 JP2023533602A JP2023533602A JP7681106B2 JP 7681106 B2 JP7681106 B2 JP 7681106B2 JP 2023533602 A JP2023533602 A JP 2023533602A JP 2023533602 A JP2023533602 A JP 2023533602A JP 7681106 B2 JP7681106 B2 JP 7681106B2
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Prior art keywords
resist
metal
dry
chamber
euv
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Japanese (ja)
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JP2023551893A (ja
JP2023551893A5 (https=
Inventor
ディクタス・ドライズ
ウー・チェンガオ
ハンセン・エリック・カルヴィン
ウエイドマン・ティモシー・ウィリアム
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Lam Research Corp
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Lam Research Corp
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Priority to JP2025073845A priority Critical patent/JP2025107246A/ja
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/36—Imagewise removal not covered by groups G03F7/30 - G03F7/34, e.g. using gas streams, using plasma
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/06—Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0042—Photosensitive materials with inorganic or organometallic light-sensitive compounds not otherwise provided for, e.g. inorganic resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/167—Coating processes; Apparatus therefor from the gas phase, by plasma deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/408—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes
    • H10P76/4085—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes characterised by the processes involved to create the masks

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  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Inorganic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Materials For Photolithography (AREA)
JP2023533602A 2020-12-08 2021-12-03 有機蒸気によるフォトレジストの現像 Active JP7681106B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2025073845A JP2025107246A (ja) 2020-12-08 2025-04-28 有機蒸気によるフォトレジストの現像

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US202063199129P 2020-12-08 2020-12-08
US63/199,129 2020-12-08
PCT/US2021/061751 WO2022125388A1 (en) 2020-12-08 2021-12-03 Photoresist development with organic vapor

Related Child Applications (1)

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JP2025073845A Division JP2025107246A (ja) 2020-12-08 2025-04-28 有機蒸気によるフォトレジストの現像

Publications (3)

Publication Number Publication Date
JP2023551893A JP2023551893A (ja) 2023-12-13
JP2023551893A5 JP2023551893A5 (https=) 2024-12-10
JP7681106B2 true JP7681106B2 (ja) 2025-05-21

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JP2023533602A Active JP7681106B2 (ja) 2020-12-08 2021-12-03 有機蒸気によるフォトレジストの現像
JP2025073845A Pending JP2025107246A (ja) 2020-12-08 2025-04-28 有機蒸気によるフォトレジストの現像

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US (2) US12577466B2 (https=)
JP (2) JP7681106B2 (https=)
KR (2) KR102883286B1 (https=)
TW (2) TW202239942A (https=)
WO (1) WO2022125388A1 (https=)

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SG11202108851RA (en) 2020-01-15 2021-09-29 Lam Res Corp Underlayer for photoresist adhesion and dose reduction
US12416863B2 (en) 2020-07-01 2025-09-16 Applied Materials, Inc. Dry develop process of photoresist
EP4078292A4 (en) 2020-07-07 2023-11-22 Lam Research Corporation Integrated dry processes for patterning radiation photoresist patterning
US20230107357A1 (en) 2020-11-13 2023-04-06 Lam Research Corporation Process tool for dry removal of photoresist
US11079682B1 (en) 2020-11-13 2021-08-03 Tokyo Electron Limited Methods for extreme ultraviolet (EUV) resist patterning development
JP7681106B2 (ja) 2020-12-08 2025-05-21 ラム リサーチ コーポレーション 有機蒸気によるフォトレジストの現像
TW202314405A (zh) * 2021-06-15 2023-04-01 美商蘭姆研究公司 用於晶圓中的乾式顯影副產物揮發的乾式顯影設備及方法
WO2024002578A1 (en) * 2022-06-27 2024-01-04 Asml Netherlands B.V. Material, method and apparatus for forming a patterned layer of 2d material
KR102725782B1 (ko) 2022-07-01 2024-11-05 램 리써치 코포레이션 에칭 정지 억제 (etch stop deterrence) 를 위한 금속 옥사이드 기반 포토레지스트의 순환적 현상
CN117476544A (zh) * 2022-07-21 2024-01-30 长鑫存储技术有限公司 半导体结构及其形成方法
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US12474640B2 (en) 2023-03-17 2025-11-18 Lam Research Corporation Integration of dry development and etch processes for EUV patterning in a single process chamber
KR20250009842A (ko) * 2023-07-11 2025-01-20 광주과학기술원 건식 현상이 가능한 포토레지스트 조성물
US20250028248A1 (en) * 2023-07-21 2025-01-23 Applied Materials, Inc. Dry development for metal-oxide photoresists
JP7852072B2 (ja) 2023-07-27 2026-04-27 ラム リサーチ コーポレーション 金属含有フォトレジストのためのオールインワン乾式現像
WO2025216867A1 (en) * 2024-04-10 2025-10-16 Applied Materials, Inc. Methods for euv dry development
US20260061243A1 (en) * 2024-09-04 2026-03-05 Tokyo Electron Limited Halogen decontamination from metal-containing materials using chemical modification
US20260099096A1 (en) * 2024-10-07 2026-04-09 Applied Materials, Inc. Batch processing tool for dry develop of extreme ultra violet (euv) resist layer

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