KR102883286B1 - 유기 증기를 사용한 포토레지스트 현상 - Google Patents

유기 증기를 사용한 포토레지스트 현상

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Publication number
KR102883286B1
KR102883286B1 KR1020237023253A KR20237023253A KR102883286B1 KR 102883286 B1 KR102883286 B1 KR 102883286B1 KR 1020237023253 A KR1020237023253 A KR 1020237023253A KR 20237023253 A KR20237023253 A KR 20237023253A KR 102883286 B1 KR102883286 B1 KR 102883286B1
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KR
South Korea
Prior art keywords
metal
process chamber
dry
resist
chamber
Prior art date
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Application number
KR1020237023253A
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English (en)
Korean (ko)
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KR20230113400A (ko
Inventor
드라이스 딕투스
챙하오 우
에릭 캘빈 한센
티모시 윌리엄 와이드먼
Original Assignee
램 리써치 코포레이션
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Priority to KR1020257032129A priority Critical patent/KR20250142946A/ko
Publication of KR20230113400A publication Critical patent/KR20230113400A/ko
Application granted granted Critical
Publication of KR102883286B1 publication Critical patent/KR102883286B1/ko
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Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/06—Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0042—Photosensitive materials with inorganic or organometallic light-sensitive compounds not otherwise provided for, e.g. inorganic resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/167—Coating processes; Apparatus therefor from the gas phase, by plasma deposition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/36—Imagewise removal not covered by groups G03F7/30 - G03F7/34, e.g. using gas streams, using plasma
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/408—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes
    • H10P76/4085—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes characterised by the processes involved to create the masks

Landscapes

  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Inorganic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Materials For Photolithography (AREA)
KR1020237023253A 2020-12-08 2021-12-03 유기 증기를 사용한 포토레지스트 현상 Active KR102883286B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020257032129A KR20250142946A (ko) 2020-12-08 2021-12-03 유기 증기를 사용한 포토레지스트 현상

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US202063199129P 2020-12-08 2020-12-08
US63/199,129 2020-12-08
PCT/US2021/061751 WO2022125388A1 (en) 2020-12-08 2021-12-03 Photoresist development with organic vapor

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020257032129A Division KR20250142946A (ko) 2020-12-08 2021-12-03 유기 증기를 사용한 포토레지스트 현상

Publications (2)

Publication Number Publication Date
KR20230113400A KR20230113400A (ko) 2023-07-28
KR102883286B1 true KR102883286B1 (ko) 2025-11-10

Family

ID=81974780

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020237023253A Active KR102883286B1 (ko) 2020-12-08 2021-12-03 유기 증기를 사용한 포토레지스트 현상
KR1020257032129A Pending KR20250142946A (ko) 2020-12-08 2021-12-03 유기 증기를 사용한 포토레지스트 현상

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020257032129A Pending KR20250142946A (ko) 2020-12-08 2021-12-03 유기 증기를 사용한 포토레지스트 현상

Country Status (5)

Country Link
US (2) US12577466B2 (https=)
JP (2) JP7681106B2 (https=)
KR (2) KR102883286B1 (https=)
TW (2) TW202239942A (https=)
WO (1) WO2022125388A1 (https=)

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US12416863B2 (en) 2020-07-01 2025-09-16 Applied Materials, Inc. Dry develop process of photoresist
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TW202314405A (zh) * 2021-06-15 2023-04-01 美商蘭姆研究公司 用於晶圓中的乾式顯影副產物揮發的乾式顯影設備及方法
WO2024002578A1 (en) * 2022-06-27 2024-01-04 Asml Netherlands B.V. Material, method and apparatus for forming a patterned layer of 2d material
KR102725782B1 (ko) 2022-07-01 2024-11-05 램 리써치 코포레이션 에칭 정지 억제 (etch stop deterrence) 를 위한 금속 옥사이드 기반 포토레지스트의 순환적 현상
CN117476544A (zh) * 2022-07-21 2024-01-30 长鑫存储技术有限公司 半导体结构及其形成方法
US12585185B2 (en) * 2022-07-22 2026-03-24 Tokyo Electron Limited Acid for reactive development of metal oxide resists
US12474640B2 (en) 2023-03-17 2025-11-18 Lam Research Corporation Integration of dry development and etch processes for EUV patterning in a single process chamber
KR20250009842A (ko) * 2023-07-11 2025-01-20 광주과학기술원 건식 현상이 가능한 포토레지스트 조성물
US20250028248A1 (en) * 2023-07-21 2025-01-23 Applied Materials, Inc. Dry development for metal-oxide photoresists
JP7852072B2 (ja) 2023-07-27 2026-04-27 ラム リサーチ コーポレーション 金属含有フォトレジストのためのオールインワン乾式現像
WO2025216867A1 (en) * 2024-04-10 2025-10-16 Applied Materials, Inc. Methods for euv dry development
US20260061243A1 (en) * 2024-09-04 2026-03-05 Tokyo Electron Limited Halogen decontamination from metal-containing materials using chemical modification
US20260099096A1 (en) * 2024-10-07 2026-04-09 Applied Materials, Inc. Batch processing tool for dry develop of extreme ultra violet (euv) resist layer

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