KR102313335B1 - Gas supply manifold and method of supplying gases to chamber using same - Google Patents
Gas supply manifold and method of supplying gases to chamber using same Download PDFInfo
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- KR102313335B1 KR102313335B1 KR1020150025314A KR20150025314A KR102313335B1 KR 102313335 B1 KR102313335 B1 KR 102313335B1 KR 1020150025314 A KR1020150025314 A KR 1020150025314A KR 20150025314 A KR20150025314 A KR 20150025314A KR 102313335 B1 KR102313335 B1 KR 102313335B1
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- gas
- manifold conduit
- tubular
- supply
- injection ports
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
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- C—CHEMISTRY; METALLURGY
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45512—Premixing before introduction in the reaction chamber
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
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- C—CHEMISTRY; METALLURGY
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45561—Gas plumbing upstream of the reaction chamber
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45574—Nozzles for more than one gas
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45582—Expansion of gas before it reaches the substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
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- H—ELECTRICITY
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- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/54—Providing fillings in containers, e.g. gas fillings
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
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Abstract
웨이퍼 프로세싱 반응기를 위한 가스 주입구 시스템이, 웨이퍼 프로세싱 반응기의 가스 주입구 포트에 연결되도록 된 튜브형 가스 매니폴드 도관; 및 제 1 가스를 상기 튜브형 가스 매니폴드 도관 안으로 공급하기 위한 제 1 공급부 및 제 2 가스를 상기 튜브형 가스 매니폴드 도관 안으로 공급하기 위한 제 2 공급부를 포함한 가스 공급부들을 구비한다. 각각의 공급부는 튜브형 가스 매니폴드 도관의 제 1 축 방향 포지션에서 튜브형 가스 매니폴드 도관에 연결된 둘 이상의 주입 포트들을 가지고, 가스 공급부들 중 각각의 가스 공급부의 주입 포트들은 제 1 축 방향 포지션에서 튜브형 가스 매니폴드 도관을 따라 균일하게 분포된다.A gas inlet system for a wafer processing reactor comprising: a tubular gas manifold conduit adapted to be connected to a gas inlet port of the wafer processing reactor; and gas supplies including a first supply for supplying a first gas into the tubular gas manifold conduit and a second supply for supplying a second gas into the tubular gas manifold conduit. each supply having two or more injection ports connected to the tubular gas manifold conduit at a first axial position of the tubular gas manifold conduit, the injection ports of each of the gas supplies having the tubular gas in the first axial position Evenly distributed along the manifold conduit.
Description
본 발명은 대체로 가스 공급 매니폴드 및 가스들을 공급하는 방법에 관한 것이고, 특히 다수의 가스들을 프로세싱 챔버로 균일하게 공급하기 위한 가스 공급 매니폴드 (manifold) 및 가스들을 공급하는 방법에 관한 것이다.FIELD OF THE INVENTION The present invention relates generally to a gas supply manifold and a method of supplying gases, and more particularly to a gas supply manifold for uniformly supplying a plurality of gases to a processing chamber and a method of supplying gases.
반도체 웨이퍼과 같은 기판 상에 필름을 증착 (deposit) 하는 방법으로서, 플라즈마 강화 ALD (plasma-enhanced ALD; PEALD) 와 열적 ALD와 같은 원자 층 증착 (atomic layer deposition; ALD) 이 잘 알려져 있다. ALD에서, 다수의 가스들이 종종 사용되므로, 분리된 가스 라인들이 ALD 반응기를 위한 공정 가스들을 전달하기 위해 요구된다. 각각의 가스 라인은 매니폴드 튜브를 통해 반응기 챔버 (reactor chamber; RC) 에 연결된다. 그러나, 이들 분리된 가스 라인들은 웨이퍼 전체에 걸쳐 나쁜 균일성을 초래하는데, 가스들이 반응기 챔버에 들어갈 때 충분히 혼합되지 않기 때문이다. 반응 챔버 상류의 가스들의 균일성은 웨이퍼 상의 필름의 평면 내 (in-plane) 균일성에 영향을 미친다. 비록 현재 300-mm 반응기 (즉, 300-mm 웨이퍼를 프로세싱하는 반응기) 가 일반적으로 사용되지만, 450-mm 반응기의 사용은 높은 스루풋과 생산성을 위해 시작되었다. 그러나, 균일성은 450-mm 반응기에서 악화되고 있다.As a method of depositing a film on a substrate such as a semiconductor wafer, atomic layer deposition (ALD) such as plasma-enhanced ALD (PEALD) and thermal ALD is well known. In ALD, multiple gases are often used, so separate gas lines are required to deliver the process gases for the ALD reactor. Each gas line is connected to a reactor chamber (RC) through a manifold tube. However, these separate gas lines lead to poor uniformity across the wafer, since the gases are not sufficiently mixed as they enter the reactor chamber. The uniformity of the gases upstream of the reaction chamber affects the in-plane uniformity of the film on the wafer. Although current 300-mm reactors (ie, reactors processing 300-mm wafers) are commonly used, the use of 450-mm reactors has begun for high throughput and productivity. However, the uniformity is deteriorating in the 450-mm reactor.
관련 기술에 관련된 문제들 및 해결책들의 임의의 논의가 본 발명에 대한 전후관계 (context) 를 제공할 목적으로만 본 개시물에 포함되고, 그 논의 중 임의의 것 또는 모두는 본 발명이 만들어졌던 때에는 알려졌었다는 것의 시인으로서 취해지지 않아야 한다.Any discussion of problems and solutions related to the related art is included in this disclosure solely for the purpose of providing context for the present invention, any or all of which discussion was made at the time the present invention was made. Not to be taken as a poet of what was known.
일부 실시형태들에 따른 목적은 반응 챔버 안으로 진입하기 전에 다수의 가스들의 혼합을 개선하는 가스 혼합 시스템을 제공하는 것이다. 일부 실시형태들에서, 각각의 가스를 위한 다수의 주입 포트들이 반응 챔버의 상류에 제공된 튜브형 가스 매니폴드 도관 내에 제공되는데, 다수의 주입 포트들은 튜브형 가스 매니폴드 도관의 축을 따라 동일한 높이에서 튜브형 가스 매니폴드 도관에 연결되고, 각각의 가스는 다수의 주입 포트들 안으로 나누어지고 튜브형 가스 매니폴드 도관 내부에서 동일한 높이로 분포된다. 다수의 주입 포트들은 가스의 확산을 위한 시간 규모 (time scale) 를 줄이며, 이에 의해 가스들의 혼합을 개선할 수 있다.It is an object according to some embodiments to provide a gas mixing system that improves the mixing of a plurality of gases prior to entry into a reaction chamber. In some embodiments, multiple injection ports for each gas are provided in a tubular gas manifold conduit provided upstream of the reaction chamber, wherein the multiple injection ports are at the same height along the axis of the tubular gas manifold conduit. Connected to a fold conduit, each gas is divided into a plurality of injection ports and distributed flush within the tubular gas manifold conduit. Multiple injection ports reduce the time scale for diffusion of gas, thereby improving mixing of gases.
일부 실시형태들에서, 각각의 가스를 위한 다수의 주입 포트들이 반응 챔버의 상류에 제공된 튜브형 가스 매니폴드 도관 내에 제공되며, 다수의 주입 포트들은 튜브형 가스 매니폴드 도관의 축에 대해 어떤 각도에서 튜브형 가스 매니폴드 도관에 연결되는데, 그 각도는 튜브형 가스 매니폴드 도관 내부의 가스들의 농도 프로파일들을 맞추기 위해서 공정 조건들에 의존하여 설정되며, 이에 의해 가스들의 혼합을 개선한다. 예를 들어, 가스들이 반응기의 일측에서부터 반응기의 타측으로 수평으로 흐르는 450-mm 반응기를 위한 공정 조건들에 대해, 가스들은 제 1 소스 가스에 대해 약 20°± 5°에서 그리고 제 2 소스 가스에 대해 약 0°에서 튜브형 가스 매니폴드 도관 안으로 주입될 수도 있고, 가스들이 반응기의 상단에서부터 주변부 쪽으로 수직으로 및 방사상으로 흐르는 450-mm 반응기를 위한 공정 조건들에 대해, 가스들은 약 90°에서 튜브형 가스 매니폴드 도관 안으로 주입될 수도 있다.In some embodiments, a plurality of injection ports for each gas are provided in a tubular gas manifold conduit provided upstream of the reaction chamber, wherein the plurality of injection ports are provided at an angle relative to the axis of the tubular gas manifold conduit for the tubular gas connected to the manifold conduit, the angle of which is set depending on the process conditions to match the concentration profiles of the gases inside the tubular gas manifold conduit, thereby improving the mixing of the gases. For example, for process conditions for a 450-mm reactor in which gases flow horizontally from one side of the reactor to the other side of the reactor, the gases are at about 20°±5° to the first source gas and to the second source gas. For process conditions for a 450-mm reactor in which gases may be injected into the tubular gas manifold conduit at about 0° to the periphery and vertically from the top of the reactor to the periphery, the gases are introduced into the tubular gas at about 90°. It may also be injected into the manifold conduit.
일부 실시형태들에서, 각각의 가스를 위한 다수의 주입 포트들이 반응 챔버의 상류에 제공된 튜브형 가스 매니폴드 도관 내에 제공되는데, 제 1 가스를 위한 다수의 주입 포트들과 제 2 가스를 위한 다수의 주입 포트들은 튜브형 가스 매니폴드 도관의 축을 따라 상이한 높이들에서 튜브형 가스 매니폴드 도관에 연결되며, 상부 주입 포트들은 포트들의 각도, 포트들의 지름 등의 측면에서 하부 주입 포트들과는 상이하게 설정되며, 이에 의해 가스들의 혼합을 개선한다.In some embodiments, multiple injection ports for each gas are provided in a tubular gas manifold conduit provided upstream of the reaction chamber, with multiple injection ports for a first gas and multiple injection ports for a second gas. The ports are connected to the tubular gas manifold conduit at different heights along the axis of the tubular gas manifold conduit, wherein the upper injection ports are set differently from the lower injection ports in terms of angles of ports, diameters of ports, etc., whereby gas improve their mixing.
일부 실시형태들에서, 각각의 가스를 위한 다수의 주입 포트들이 반응 챔버의 상류에 제공된 튜브형 가스 매니폴드 도관 내에 제공되며, 다수의 주입 포트들은 반응기로부터 어떤 거리로 떨어져서 튜브형 가스 매니폴드 도관에 연결되는데, 그 거리는 양호한 혼합을 위해 충분히 길다. 예를 들어, 450-mm 반응기의 경우, 주입 포트들이 제공되는 포인트와 튜브형 가스 매니폴드 도관의 하부 말단 사이의 최소 길이는 약 115 mm일 수도 있다.In some embodiments, a plurality of injection ports for each gas are provided in a tubular gas manifold conduit provided upstream of the reaction chamber, the plurality of injection ports being connected to the tubular gas manifold conduit at a distance from the reactor. , the distance is long enough for good mixing. For example, for a 450-mm reactor, the minimum length between the point where the injection ports are provided and the lower end of the tubular gas manifold conduit may be about 115 mm.
일부 실시형태들에서, 각각의 가스를 위한 다수의 주입 포트들은 반응 챔버의 상류에 제공된 튜브형 가스 매니폴드 도관 내에 제공되며, 상단 주입 포트가 튜브형 가스 매니폴드 도관의 상단에 추가로 제공되는데, 상단 주입 포트로부터의 가스 흐름이 제어되며, 이에 의해 가스들의 혼합을 개선한다.In some embodiments, a plurality of injection ports for each gas are provided in a tubular gas manifold conduit provided upstream of the reaction chamber, and a top injection port is further provided at the top of the tubular gas manifold conduit, the top injection The gas flow from the port is controlled, thereby improving the mixing of the gases.
관련 기술을 넘어서게 달성되는 본 발명의 양태들 및 장점들을 요약하기 위해, 본 발명의 특정한 목적들 및 장점들이 본 개시물에서 설명되고 있다. 물론, 반드시 모든 이러한 목적들 또는 장점들이 본 발명의 임의의 특정 실시형태에 따라 달성될 수도 있다는 것이 아님은 이해되어야 한다. 따라서, 예를 들어, 당업자들은 본원에서 교시 또는 제안될 수도 있는 다른 목적들 또는 장점들을 반드시 달성하지 않고서도 본 발명이 본원에서 교시된 바와 같은 하나의 장점 또는 장점들의 그룹을 달성하거나 또는 최적화하는 방식으로 실시되거나 또는 수행될 수도 있다는 것을 인식할 것이다.In order to summarize aspects and advantages of the invention that are achieved beyond the related art, certain objects and advantages of the invention are set forth in this disclosure. Of course, it should be understood that not necessarily all such objects or advantages may be achieved in accordance with any particular embodiment of the present invention. Thus, for example, a person skilled in the art will be skilled in the art how the present invention achieves or optimizes one advantage or group of advantages as taught herein without necessarily achieving other objects or advantages that may be taught or suggested herein. It will be appreciated that, or may be implemented as
본 발명의 추가의 양태들, 특징들 및 장점들이 뒤따르는 상세한 설명으로부터 명확하게 될 것이다.Additional aspects, features and advantages of the present invention will become apparent from the detailed description that follows.
특허 또는 출원 파일은 컬러로 만들어진 적어도 하나의 도면을 포함한다. 컬러 도면(들)을 갖는 이 특허 또는 특허 출원공개의 사본들이 요청 및 필요한 요금의 납부에 의거하여 관청에 의해 제공될 것이다.
본 발명의 이들 및 다른 특징들이 본 발명을 예시하는 의도이고 제한하는 의도는 아닌 바람직한 실시형태들의 도면들을 참조하여 이제 설명될 것이다. 도면들은 예시적 목적들을 위해 대단히 단순화되고 일정한 축척대로일 필요는 없다.
도 1은 본 발명의 일 실시형태에 따른 가스 혼합 시스템을 도시하는 개략도이다.
도 2는 본 발명의 다른 실시형태에 따른 가스 혼합 시스템을 도시하는 개략도이다.
도 3은 본 발명의 또 다른 실시형태에 따른 가스 혼합 시스템을 도시하는 개략도이다.
도 4는 본 발명의 일 실시형태에 따른, 도 3에 예시된 가스 혼합 시스템의 가스 주입 포트들을 도시하는 개략도이다.
도 5는 본 발명의 일 실시형태에 따른 도 3에 예시된 가스 혼합 시스템의 벽들 상의 가스 농도들을 표현하는 전산 유체 동역학 (computational fluid dynamics; CFD) 시뮬레이션 (ANSYS Fluent) 을 사용하여 획득된 이미지를 도시하는데, 그 컬러들은 공정 가스 종 (species) 의 농도를 해석하는 공정 가스 몰 분율 (mole fraction) 들의 범위들을 표현하며, 청색 내지 적색의 스케일에서, 청색은 가스 종이 없다는 것을 나타내는 반면 적색은 가스 종의 높은 농도를 나타낸다.
도 6a는 3 개의 가스 주입 포트들이 동일한 높이에 배치된 제 1 및 제 2 공급부들 각각에 대해 20°의 각도로 제공되는 본 발명의 일 실시형태에 따른 튜브형 매니폴드 도관의 하부 말단에서 취해진 튜브형 매니폴드 도관의 단면 상의 가스 농도들을 나타내는, 전산 유체 동역학 (CFD) 시뮬레이션을 사용하여 획득된 이미지를 도시한다.
도 6b는 5 개의 가스 주입 포트들이 동일한 높이에 배치된 제 1 및 제 2 공급부들 각각에 대해 20°의 각도로 제공되는 본 발명의 다른 실시형태에 따른 튜브형 매니폴드 도관의 하부 말단에서 취해진 튜브형 매니폴드 도관의 단면 상의 가스 농도들을 나타내는, 전산 유체 동역학 (CFD) 시뮬레이션을 사용하여 획득된 이미지를 도시한다.
도 7a는 5 개의 가스 주입 포트들이 동일한 높이에 배치된 제 1 및 제 2 공급부들 각각에 대해 25°의 각도로 제공되는 본 발명의 일 실시형태에 따른 튜브형 매니폴드 도관의 하부 말단에서 취해진 튜브형 매니폴드 도관의 단면 상의 가스 농도들을 나타내는, 전산 유체 동역학 (CFD) 시뮬레이션을 사용하여 획득된 이미지를 도시한다.
도 7b는 5 개의 가스 주입 포트들이 동일한 높이에 배치된 제 1 및 제 2 공급부들 각각에 대해 15°의 각도로 제공되는 본 발명의 또 다른 실시형태에 따른 튜브형 매니폴드 도관의 하부 말단에서 취해진 튜브형 매니폴드 도관의 단면 상의 가스 농도들을 나타내는, 전산 유체 동역학 (CFD) 시뮬레이션을 사용하여 획득된 이미지를 도시한다.
도 8a는 공정 가스가 튜브형 가스 매니폴드 도관의 하부 축 방향 포지션에 배치된 가스 주입 포트들로부터 도입되는 본 발명의 일 실시형태에 따른 도 3에 예시된 것과 유사한 가스 혼합 시스템의 벽들 상의 가스 농도들을 나타내는, 전산 유체 동역학 (CFD) 을 사용하여 획득된 이미지를 도시한다.
도 8b는 도 8a에 예시된 실시형태에 따른 튜브형 매니폴드 도관의 하부 말단에서 취해진 튜브형 매니폴드 도관의 단면 상의 가스 농도들을 나타내는, 전산 유체 동역학 (CFD) 시뮬레이션을 사용하여 획득된 이미지를 도시한다.
도 9a는 공정 가스가 튜브형 가스 매니폴드 도관의 상부 축 방향 포지션에 배치된 가스 주입 포트들로부터 도입되는 본 발명의 일 실시형태에 따른 도 3에 예시된 것과 유사한 가스 혼합 시스템의 벽들 상의 가스 농도들을 나타내는, 전산 유체 동역학 (CFD) 을 사용하여 획득된 이미지를 도시한다.
도 9b는 도 9a에 예시된 실시형태에 따른 튜브형 매니폴드 도관의 하부 말단에서 취해진 튜브형 매니폴드 도관의 단면 상의 가스 농도들을 나타내는, 전산 유체 동역학 (CFD) 시뮬레이션을 사용하여 획득된 이미지를 도시한다.
도 10은 도 9a에 예시된 실시형태에 따른 튜브형 매니폴드 도관의 중간 (middle) 에서 취해진 튜브형 매니폴드 도관의 단면 상의 가스 농도들을 나타내는, 전산 유체 동역학 (CFD) 시뮬레이션을 사용하여 획득된 이미지를 도시한다.
도 11a는 공정 가스가 튜브형 가스 매니폴드 도관의 하부 축 방향 포지션에 배치된 가스 주입 포트들로부터 도입되는 본 발명의 일 실시형태에 따른 나선형 (helix) 설계를 갖는 유사한 가스 혼합 시스템의 벽들 상의 가스 농도들을 나타내는, 전산 유체 동역학 (CFD) 을 사용하여 획득된 이미지를 도시한다.
도 11b는 도 11a에 예시된 실시형태에 따른 튜브형 매니폴드 도관의 하부 말단에서 취해진 튜브형 매니폴드 도관의 단면 상의 가스 농도들을 나타내는, 전산 유체 동역학 (CFD) 시뮬레이션을 사용하여 획득된 이미지를 도시한다.
도 12a 및 도 12b는, 건조 가스가 튜브형 가스 매니폴드 도관의 축 방향에서 상부 주입 포트들로부터 0.24 slm (도 12a) 및 0.72 slm (도 12b) 으로 튜브형 가스 매니폴드 도관 안으로 배출되는, 본 발명의 일 실시형태에 따른 튜브형 매니폴드 도관의 하부 말단에서 취해진, 도 3에 예시된 것과 유사한 튜브형 매니폴드 도관의 단면 상의 가스 농도들을 나타내는, 전산 유체 동역학 (CFD) 시뮬레이션을 사용하여 획득된 이미지들을 도시한다.
도 13은, 건조 가스가 하부 포트들로부터 0.54 slm으로 튜브형 가스 매니폴드 도관 안으로 배출되는, 본 발명의 일 실시형태에 따른 튜브형 매니폴드 도관의 하부 말단에서 취해진, 도 3에 예시된 것과 유사한 튜브형 매니폴드 도관의 단면 상의 가스 농도들을 나타내는, 전산 유체 동역학 (CFD) 시뮬레이션을 사용하여 획득된 이미지를 도시한다.
도 14는 450-mm 단일 웨이퍼 프로세싱 반응기를 위한 기존의 샤워 헤드의 벽들 상의 가스 농도들을 나타내는 전산 유체 동역학 (CFD) 시뮬레이션을 사용하여 획득된 이미지를 도시한다.
도 15는 (A) 주입 포트들이 내부 벽을 따라 위치되는 경우, (B) 주입 포트들이 중앙과 내부 벽 사이의 중간에 위치되는 경우, 및 (C) 주입 포트들이 중앙에 위치되는 경우의 주입 포트들로부터 확산 포인트들까지의 거리들을 개략적으로 예시하는 튜브형 매니폴드 도관의 단면도들을 도시한다.
도 16은 일 실시형태에 따른 튜브형 가스 매니폴드 도관이 장치의 공정 챔버의 중앙 가스 포트에 부착되도록 되는 플라즈마-지원형 증착 장치의 개략도이다.
도 17은 일 실시형태에 따른 튜브형 가스 매니폴드 도관이 장치의 공정 챔버의 측면 가스 포트에 부착되도록 되는 UV-지원형 증착 장치의 개략도이다.A patent or application file contains at least one drawing made in color. Copies of this patent or patent application publication with color drawing(s) will be provided by the Office upon request and payment of the necessary fees.
These and other features of the invention will now be described with reference to the drawings of preferred embodiments, which are intended to be illustrative and not limiting of the invention. The drawings are oversimplified for illustrative purposes and need not be to scale.
1 is a schematic diagram illustrating a gas mixing system according to an embodiment of the present invention.
2 is a schematic diagram illustrating a gas mixing system according to another embodiment of the present invention.
3 is a schematic diagram illustrating a gas mixing system according to another embodiment of the present invention.
FIG. 4 is a schematic diagram illustrating gas injection ports of the gas mixing system illustrated in FIG. 3 , in accordance with an embodiment of the present invention;
5 shows an image obtained using a computational fluid dynamics (CFD) simulation (ANSYS Fluent) representing gas concentrations on the walls of the gas mixing system illustrated in FIG. 3 according to an embodiment of the present invention; The colors represent ranges of process gas mole fractions that interpret the concentration of the process gas species, on a scale of blue to red, where blue represents no gas species while red represents gas species. shows a high concentration.
6A is a tubular manifold taken at the lower end of a tubular manifold conduit according to an embodiment of the present invention in which three gas injection ports are provided at an angle of 20° with respect to each of the first and second feeds arranged at the same height; Shows an image obtained using computational fluid dynamics (CFD) simulation, representing gas concentrations on a cross-section of a fold conduit.
6b is a tubular manifold taken at the lower end of a tubular manifold conduit according to another embodiment of the present invention in which five gas injection ports are provided at an angle of 20° with respect to each of the first and second feeds arranged at the same height; Shows an image obtained using computational fluid dynamics (CFD) simulation, representing gas concentrations on a cross-section of a fold conduit.
7A is a tubular manifold taken at the lower end of a tubular manifold conduit according to an embodiment of the present invention in which five gas injection ports are provided at an angle of 25° with respect to each of first and second co-planar feeds; Shows an image obtained using computational fluid dynamics (CFD) simulation, representing gas concentrations on a cross-section of a fold conduit.
7b is a tubular taken at the lower end of a tubular manifold conduit according to another embodiment of the present invention in which five gas injection ports are provided at an angle of 15° with respect to each of the first and second co-planar feeds; Shows an image obtained using computational fluid dynamics (CFD) simulation, representing gas concentrations on a cross-section of a manifold conduit.
8A shows gas concentrations on the walls of a gas mixing system similar to that illustrated in FIG. 3 in accordance with one embodiment of the present invention in which process gas is introduced from gas injection ports disposed in a lower axial position of a tubular gas manifold conduit; shows the images acquired using computational fluid dynamics (CFD).
8B shows an image obtained using computational fluid dynamics (CFD) simulation, showing gas concentrations on a cross-section of the tubular manifold conduit taken at the lower end of the tubular manifold conduit according to the embodiment illustrated in FIG. 8A .
9A illustrates gas concentrations on the walls of a gas mixing system similar to that illustrated in FIG. 3 in accordance with an embodiment of the present invention in which process gas is introduced from gas injection ports disposed in an upper axial position of a tubular gas manifold conduit; shows the images acquired using computational fluid dynamics (CFD).
9B shows an image obtained using computational fluid dynamics (CFD) simulations showing gas concentrations on a cross-section of a tubular manifold conduit taken at the lower end of the tubular manifold conduit according to the embodiment illustrated in FIG. 9A .
10 shows an image obtained using computational fluid dynamics (CFD) simulation, showing gas concentrations on a cross-section of a tubular manifold conduit taken from the middle of the tubular manifold conduit according to the embodiment illustrated in FIG. 9A; do.
11A is a gas concentration on the walls of a similar gas mixing system having a helix design according to an embodiment of the present invention in which process gas is introduced from gas injection ports disposed in a lower axial position of a tubular gas manifold conduit; shows an image acquired using computational fluid dynamics (CFD), representing
11B shows an image obtained using computational fluid dynamics (CFD) simulation, showing gas concentrations on a cross-section of the tubular manifold conduit taken at the lower end of the tubular manifold conduit according to the embodiment illustrated in FIG. 11A .
12A and 12B are of the present invention wherein dry gas is discharged into the tubular gas manifold conduit at 0.24 slm ( FIG. 12A ) and 0.72 slm ( FIG. 12B ) from the upper injection ports in the axial direction of the tubular gas manifold conduit. Shows images obtained using computational fluid dynamics (CFD) simulations showing gas concentrations on a cross-section of a tubular manifold conduit similar to that illustrated in FIG. 3 , taken at the lower end of the tubular manifold conduit according to one embodiment. .
13 is a tubular manifold similar to that illustrated in FIG. 3 , taken at the lower end of the tubular manifold conduit in accordance with one embodiment of the present invention, wherein drying gas is discharged from the lower ports at 0.54 slm into the tubular gas manifold conduit; Shows an image obtained using computational fluid dynamics (CFD) simulation, representing gas concentrations on a cross-section of a fold conduit.
14 shows an image obtained using computational fluid dynamics (CFD) simulation showing gas concentrations on the walls of a conventional shower head for a 450-mm single wafer processing reactor.
15 shows (A) the injection ports when they are located along the inner wall, (B) when the injection ports are located halfway between the center and the inner wall, and (C) when the injection ports are located centrally; Shows cross-sectional views of a tubular manifold conduit schematically illustrating distances from s to diffusion points.
16 is a schematic diagram of a plasma-assisted deposition apparatus in which a tubular gas manifold conduit is attached to a central gas port of a process chamber of the apparatus according to one embodiment;
17 is a schematic diagram of a UV-assisted deposition apparatus in which a tubular gas manifold conduit is attached to a side gas port of a process chamber of the apparatus according to one embodiment;
본 개시물에서, "가스"는 기화된 (vaporized) 고체 및/또는 액체를 포함할 수도 있고 단일 가스 또는 가스들의 혼합물에 의해 구성될 수도 있다. 비슷하게, 관사 "a" 또는 "an"의 사용에 해당하는 국어 표현은 종 (species) 또는 다수의 종들을 포함하는 속 (genus) 을 말한다. 본 개시물에서, 튜브형 가스 매니폴드 도관을 통해 반응 챔버로 도입된 가스가, 선구물질 (precursor) 들, 반응물 (reactant) 가스들, 및 첨가물 (additive) 가스들 (예컨대, NH3, TiCl4, O3) 로 이루어진 그룹으로부터 선택된 적어도 하나의 반응 가스인 공정 가스와, 희석 가스들, 퍼지 (purge) 가스들, 및 캐리어 가스들 (예컨대, Ar, He, Ne, Kr, 또는 Xe와 같은 희유 (rare) 가스, N2, H2, O2와 같은 다른 불활성 가스) 로 이루어진 그룹으로부터 선택된 적어도 하나의 불활성 가스인 건조 가스를 포함할 수도 있거나, 그러한 가스들로 기본적으로 구성될 수도 있거나, 또는 구성될 수도 있다. 첨가물 가스는 반응 챔버에서의 선구물질을 산화, 탄화, 및/또는 질화하기 위한 가스를 포함한다. 선구물질은 캐리어 가스로 도입될 수 있다. 공정 가스 및 건조 가스 이외의 가스, 즉, 튜브형 가스 매니폴드 도관을 통과하는 일 없이 도입된 가스가, 예컨대, 반응 공간을 봉지하기 위해 사용될 수도 있는데, 그 도입된 가스는 봉지 (seal) 가스를 포함한다. 희석 가스, 퍼지 (purge) 가스, 캐리어 가스, 및 봉지 가스는 독립적으로 선택될 수 있다. 건조 가스와 공정 가스는 반응기 상류의 튜브형 가스 매니폴드 도관 내에서 혼합되어서, 건조 가스와 공정 가스는 튜브형 가스 매니폴드 도관 내에서 반응성이거나 또는 미미하게 반응성 (반응이 최소임) 이다. 예를 들어, O3는 분해되지만, 특정한 조건들 하에서, 분해율은 낮고 그것의 수명은 반응기 섹션에 도달할 만큼 충분히 길어서, O3는 공정 가스로서 사용될 수 있다. 게다가, 본 개시물에서는, 작업가능 범위가 일상적인 작업에 기초하여 결정될 수 있을 때 변수의 임의의 2 개의 수들이 그 변수의 작업가능 범위를 구성할 수 있고 표시된 임의의 범위들은 끝점 (endpoint) 들을 포함하거나 또는 배제할 수도 있다. 덧붙여, 표시된 변수들의 임의의 값들은 정확한 값들 또는 근사 값들을 지칭하고 동등물들을 포함할 수도 있고, 일부 실시형태들에서는 평균, 중간, 대표, 과반수 (majority) 등을 지칭할 수도 있다. 게다가, 본 개시물에서, 반응 챔버는 단일 챔버와 듀얼 챔버, 그리고 전형적으로는 특히 450-mm 웨이퍼를 프로세싱하기 위한 단일-웨이퍼 프로세싱 챔버를 포함하나 그것들로 제한되지는 않는다. 또한, 디바이스 치수들을 규모축소하기 위해, 개시된 구성들 또는 그 개조예들은 300-mm 웨이퍼를 프로세싱하기 위한 단일-웨이퍼 프로세싱 챔버 또는 임의의 다른 적합한 챔버들에 적용될 수 있다.In this disclosure, "gas" may include vaporized solids and/or liquids and may be constituted by a single gas or mixture of gases. Similarly, the Korean expression corresponding to the use of the articles "a" or "an" refers to a species or a genus containing multiple species. In the present disclosure, the gas introduced into the reaction chamber through the tubular gas manifold conduit includes precursors, reactant gases, and additive gases (eg, NH 3 , TiCl 4 , O 3 ) a process gas, which is at least one reactant gas selected from the group consisting of, diluent gases, purge gases, and carrier gases (eg, rare (such as Ar, He, Ne, Kr, or Xe) a dry gas which is at least one inert gas selected from the group consisting of rare) gases, N 2 , H 2 , other inert gases such as O 2 ), or may consist essentially of, or consist of could be The additive gas includes a gas for oxidizing, carbonizing, and/or nitriding the precursor in the reaction chamber. The precursor may be introduced as a carrier gas. A gas other than the process gas and the drying gas, i.e., a gas introduced without passing through a tubular gas manifold conduit, may be used, for example, to seal the reaction space, the introduced gas comprising a seal gas do. The dilution gas, purge gas, carrier gas, and encapsulation gas may be independently selected. The drying gas and process gas are mixed in a tubular gas manifold conduit upstream of the reactor such that the drying gas and process gas are reactive or marginally reactive (with minimal reaction) in the tubular gas manifold conduit. For example, O 3 decomposes, but under certain conditions the rate of decomposition is low and its lifetime is long enough to reach the reactor section, so that O 3 can be used as a process gas. Furthermore, in the present disclosure, when the operable range can be determined based on routine operation, any two numbers of a variable can constitute the operable range of the variable and any ranges indicated are endpoints. may be included or excluded. In addition, any values of the variables indicated refer to exact or approximate values and may include equivalents, and in some embodiments may refer to average, median, representative, majority, and the like. Furthermore, in the present disclosure, reaction chambers include, but are not limited to, single and dual chambers, and typically single-wafer processing chambers, particularly for processing 450-mm wafers. Further, to scale down device dimensions, the disclosed configurations or modifications thereof may be applied to a single-wafer processing chamber or any other suitable chambers for processing a 300-mm wafer.
조건들 및/또는 구조들이 특정되지 않은 본 개시물에서, 당업계에서 숙련된 자들은 일상적인 실험 상 본 개시물의 관점에서, 이러한 조건들 및/또는 구조들을 쉽사리 제공할 수 있다.In the present disclosure in which conditions and/or structures are not specified, those skilled in the art can readily provide such conditions and/or structures in light of the present disclosure in routine experimentation.
개시된 실시형태들의 모두에서, 일 실시형태에서 사용되는 임의의 엘리먼트가, 의도된 목적들을 위해, 그것과 동등한, 명시적으로, 반드시, 또는 본질적으로 본원에서 개시된 것들을 포함한 임의의 엘리먼트들로 교체될 수 있다. 게다가, 본 발명은 장치들 및 방법들에 동일하게 적용될 수 있다.In all of the disclosed embodiments, any element used in one embodiment may be replaced, for the intended purposes, with any element, including those disclosed herein, that is equivalent, explicitly, necessarily, or essentially equivalent thereto. have. Moreover, the present invention is equally applicable to apparatuses and methods.
본 개시물에서, 임의의 정의된 의미들은 일부 실시형태들에서 일반적인 및 관습적인 의미들을 반드시 배제하지는 않는다.In this disclosure, any defined meanings do not necessarily exclude common and customary meanings in some embodiments.
실시형태들은 바람직한 실시형태들에 관하여 설명될 것이다. 그러나, 본 발명은 바람직한 실시형태들로 제한되지 않는다.Embodiments will be described with respect to preferred embodiments. However, the present invention is not limited to the preferred embodiments.
일부 실시형태들에서, 웨이퍼 프로세싱 반응기를 위한 가스 주입구 시스템은, (i) 튜브형 가스 매니폴드 도관에서 혼합된 가스를 웨이퍼 프로세싱 반응기로 공급하기 위해 웨이퍼 프로세싱 반응기의 가스 주입구 포트에 연결되도록 된 튜브형 가스 매니폴드 도관; 및 (ii) 제 1 가스를 튜브형 가스 매니폴드 도관 안으로 공급하기 위한 제 1 공급부와 제 2 가스를 튜브형 가스 매니폴드 도관 안으로 공급하기 위한 제 2 공급부를 포함하는 가스 공급부들로서, 각각의 가스 공급부는 튜브형 가스 매니폴드 도관의 제 1 축 방향 포지션에서 튜브형 가스 매니폴드 도관에 연결된 둘 이상의 주입 포트들을 갖는 가스 공급부들을 포함하며, 가스 공급부들 중 각각의 가스 공급부의 주입 포트들은 제 1 축 방향 포지션에서 튜브형 가스 매니폴드 도관의 둘레 (circumference) 를 따라 균일하게 분포된다. 용어 "균일하게 분포된다 (evenly distributed)"는 둘레를 따라 실질적으로 동일한 간격으로 분포된 것 또는 둘레를 따라 반복적인 패턴의 분포를 사용하여 분포된다는 것을 뜻한다. 튜브형 가스 매니폴드 도관은 축을 가지고, 축 방향 포지션은, 튜브형 가스 매니폴드 도관의 하부 말단으로부터 그 축을 따라 축 방향 포인트까지의 거리에 의해 정의되고, 축 방향 포인트를 통과하는 평면 상에 있는 그리고 튜브형 가스 매니폴드 도관의 축에 수직인 임의의 포인트들을 포함한다. 제 1 축 방향 포지션에서의 튜브형 가스 매니폴드 도관의 둘레는 튜브형 가스 매니폴드 도관의 내부에 노출된 둘레이다. 가스 공급부들 중 각각의 가스 공급부의 주입 포트들은 제 1 축 방향 포지션에서 둘레를 따라 균일하게 분포되며, 즉, 각각의 가스 공급부의 포트들의 중심들은 제 1 축 방향 포지션에서 둘레를 따라 실질적으로 동일한 간격으로 배치된다. 가스 공급부는 가스 라인에 의해 정의되며, 즉, 제 1 가스 공급부 및 제 2 가스 공급부는, 독립적으로 또는 상이하게 각각 제어될 수 있는 상이하고 별개인 가스 라인들에 연결된다. 일부 실시형태들에서, 튜브형 가스 매니폴드 도관은, 웨이퍼 프로세싱 반응기의 가스 주입구 포트에 직접 연결되도록, 즉, 자동 압력 조정기 또는 질량 유량 제어기와 같은 임의의 흐름 제어 디바이스 없이 연결되도록 된다. 일부 실시형태들에서, 주입 포트들은 튜브형 가스 매니폴드 도관에 직접 고정되게 연결된다.In some embodiments, a gas inlet system for a wafer processing reactor comprises: (i) a tubular gas manifold adapted to be connected to a gas inlet port of the wafer processing reactor for supplying a gas mixed in the tubular gas manifold conduit to the wafer processing reactor fold conduit; and (ii) a first supply for supplying a first gas into the tubular gas manifold conduit and a second supply for supplying a second gas into the tubular gas manifold conduit, wherein each gas supply is tubular. gas supplies having two or more injection ports connected to the tubular gas manifold conduit in a first axial position of the gas manifold conduit, wherein the injection ports of each of the gas supplies are tubular in the first axial position Evenly distributed along the circumference of the gas manifold conduit. The term "evenly distributed" means substantially equally spaced along the perimeter or distributed using a repeating pattern of distributions along the perimeter. The tubular gas manifold conduit has an axis, and the axial position is defined by the distance from the lower end of the tubular gas manifold conduit to the axial point along the axis and is on a plane passing through the axial point and the tubular gas including any points perpendicular to the axis of the manifold conduit. The perimeter of the tubular gas manifold conduit in the first axial position is the exposed perimeter of the interior of the tubular gas manifold conduit. The injection ports of each of the gas supplies are uniformly distributed along the circumference in the first axial position, ie, the centers of the ports of each gas supply are substantially equally spaced along the circumference in the first axial position. is placed as The gas supply is defined by a gas line, ie the first gas supply and the second gas supply are connected to different and separate gas lines which can each be controlled independently or differently. In some embodiments, the tubular gas manifold conduit is adapted to connect directly to the gas inlet port of the wafer processing reactor, ie, without any flow control device such as an automatic pressure regulator or mass flow controller. In some embodiments, the injection ports are fixedly connected directly to the tubular gas manifold conduit.
일부 실시형태들에서, 제 1 공급부의 주입 포트들의 수와 제 2 공급부의 주입 포트들의 수는 동일하고, 제 1 공급부의 주입 포트들과 제 2 공급부의 주입 포트들은 튜브형 가스 매니폴드 도관의 둘레를 따라 번갈아 배치된다. 대안으로, 제 1 공급부의 주입 포트들의 수와 제 2 공급부의 주입 포트들의 수는 상이하다. 바람직하게는, 모든 주입 포트들은 둘레를 따라 실질적으로 동일한 간격으로 배치된다. 일부 실시형태들에서, 각각의 공급부의 주입 포트들의 수는 2 내지 10, 바람직하게는 4 내지 8이다.In some embodiments, the number of injection ports of the first supply and the number of injection ports of the second supply are the same, and the injection ports of the first supply and injection ports of the second supply run around the perimeter of the tubular gas manifold conduit. are placed alternately. Alternatively, the number of injection ports of the first supply and the number of injection ports of the second supply are different. Preferably, all injection ports are substantially equally spaced along the perimeter. In some embodiments, the number of injection ports of each feed is between 2 and 10, preferably between 4 and 8.
제 1 공급부는 제 1 가스의 유입을 위한 유입구와 제 1 공급부의 둘 이상의 주입 포트들에 각각 연결된 제 1 가스의 유출을 위한 다수의 유출구들을 갖는 C-자형 공통 채널을 더 구비하고, 제 2 공급부는 제 2 가스의 유입을 위한 유입구와 제 2 공급부의 둘 이상의 주입 포트들에 각각 연결된 제 2 가스의 유출을 위한 다수의 유출구들을 갖는 C-자형 공통 채널을 더 구비한다. C-자형 공통 채널은 튜브형 가스 매니폴드 도관을 둘러싼다. 일부 실시형태들에서, 제 1 공급부의 C-자형 공통 채널 및 제 2 공급부의 C-자형 공통 채널은 튜브형 가스 매니폴드 도관의 축에 수직인 동일한 평면 상에 동심적으로 (concentrically) 배치되며, 제 1 공급부의 C-자형 공통 채널은 제 2 공급부의 C-자형 공통 채널보다 큰 지름을 가지며, 제 1 공급부의 C-자형 공통 채널의 다수의 유출구들은 C-자형 공통 채널의 내부 주변부에 연결되는 한편, 제 2 공급부의 C-자형 공통 채널의 다수의 유출구들은 C-자형 공통 채널의 외부 주변부에 연결되어서, 제 1 및 제 2 공급부들 양쪽 모두를 위한 다수의 유출구들은 동일한 길이를 가질 수 있고 튜브형 가스 매니폴드 도관의 축에 대해 동일한 각도에서 튜브형 가스 매니폴드 도관에 연결될 수 있다.The first supply further comprises a C-shaped common channel having an inlet for the inlet of the first gas and a plurality of outlets for the outflow of the first gas respectively connected to the two or more injection ports of the first supply, the second supply The section further includes a C-shaped common channel having an inlet for the inlet of the second gas and a plurality of outlets for the outlet of the second gas each connected to the two or more injection ports of the second supply. A C-shaped common channel surrounds the tubular gas manifold conduit. In some embodiments, the C-shaped common channel of the first supply and the C-shaped common channel of the second supply are concentrically disposed on the same plane perpendicular to the axis of the tubular gas manifold conduit, The C-shaped common channel of the first supply has a larger diameter than the C-shaped common channel of the second supply, and a plurality of outlets of the C-shaped common channel of the first supply are connected to the inner periphery of the C-shaped common channel while , the plurality of outlets of the C-shaped common channel of the second supply are connected to the outer periphery of the C-shaped common channel so that the plurality of outlets for both the first and second feeds can have the same length and the tubular gas It may be connected to the tubular gas manifold conduit at the same angle relative to the axis of the manifold conduit.
대안으로, C-형상은 튜브형 가스 매니폴드 도관을 둘러싸는 완전한 원형 형상일 수 있다.Alternatively, the C-shape may be a complete circular shape surrounding the tubular gas manifold conduit.
일부 실시형태들에서, 각각의 공급부의 주입 포트들은 튜브형 가스 매니폴드 도관의 축에 대해 약 0° 내지 약 90°, 바람직하게는 0° 내지 약 45°의 각도에서 튜브형 가스 매니폴드 도관에 연결된다. 일부 실시형태들에서, 각각의 공급부의주입 포트들은 튜브형 가스 매니폴드 도관의 축에 대해 약 90°의 각도에서 튜브형 가스 매니폴드 도관에 연결된다. 그 각도는 반응 챔버의 유형, 예컨대, 샤워헤드 형 (가스가 웨이퍼의 외부 주변부에 방사상으로 흐름) 또는 크로스-플로 (cross-flow) 형 (가스가 웨이퍼의 일측에서부터 웨이퍼의 반대측으로 흐름) 에 의존하고, 또한 공정 조건들, 포트들의 지름, 및 매니폴드의 지름에 의존하고, 추가로는 상단 주입 포트가 제공되는지의 여부에 의존한다. 예를 들어, 그 각도는 450-mm 웨이퍼를 위한 샤워헤드 형 반응기 (예컨대, ALD를 위한 것이고 반응기의 상단에 배치된 원격 플라즈마에 연결된 비교적 작은 샤워헤드를 갖는 EmerALD®) 에 대해 약 15° 내지 약 25°, 그리고, 예를 들어, 450-mm 웨이퍼를 위한 다른 샤워헤드 형 반응기 (예컨대, 플라즈마-강화 ALD를 위한 것이고 다수의 독립 챔버들을 갖는 Eagle®) 에 대해 약 90°일 수도 있다.In some embodiments, the injection ports of each supply are connected to the tubular gas manifold conduit at an angle of from about 0° to about 90°, preferably from 0° to about 45°, with respect to the axis of the tubular gas manifold conduit. . In some embodiments, the injection ports of each supply are connected to the tubular gas manifold conduit at an angle of about 90° with respect to the axis of the tubular gas manifold conduit. The angle depends on the type of reaction chamber, eg showerhead type (gas flows radially to the outer periphery of the wafer) or cross-flow type (gas flows from one side of the wafer to the opposite side of the wafer). and also depends on the process conditions, the diameter of the ports, and the diameter of the manifold, and further on whether or not a top injection port is provided. For example, the angle is between about 15° and about for a showerhead type reactor for a 450-mm wafer (eg, EmerALD® for ALD and having a relatively small showerhead connected to a remote plasma disposed on top of the reactor). 25°, and, for example, about 90° for other showerhead type reactors for 450-mm wafers (eg, Eagle® for plasma-enhanced ALD and has multiple independent chambers).
일부 실시형태들에서, 튜브형 가스 매니폴드 도관은 제 1 축 방향 포지션의 하류에서의 제 1 지름, 및 제 1 축 방향 포지션에서의 제 2 지름을 가지며, 상기 제 2 지름은 제 1 지름보다 작아서, 주입 포트들은, 예를 들어, 튜브형 가스 매니폴드 도관의 축에 대해 약 0° 내지 약 45°의 각도에서 튜브형 가스 매니폴드 도관에 연결될 수 있다. 일부 실시형태들에서, 제 1 지름 (내부 지름) 은 약 14 mm ±50%이고, 제 2 지름 (내부 지름) 은 약 10 mm ±50%이다. 일부 실시형태들에서, 각각의 주입 포트의 내부 지름 (이는 통상 다수의 유출구들의 내부 지름과 같음) 은 약 3 mm ±50%이다.In some embodiments, the tubular gas manifold conduit has a first diameter downstream of a first axial position, and a second diameter at the first axial position, wherein the second diameter is less than the first diameter; The injection ports may be connected to the tubular gas manifold conduit, for example, at an angle from about 0° to about 45° with respect to the axis of the tubular gas manifold conduit. In some embodiments, the first diameter (inside diameter) is about 14 mm±50% and the second diameter (inside diameter) is about 10 mm±50%. In some embodiments, the inner diameter of each injection port (which is usually equal to the inner diameter of the plurality of outlets) is about 3 mm ± 50%.
일부 실시형태들에서, 제 1 공급부는 공정 가스 (예컨대, 금속 (metallo) -유기 화합물) 와 같은 반응 가스를 제공하는 가스 소스에 연결되고, 제 2 공급부는 희유 가스와 같은 건조 가스를 제공하는 가스 소스에 연결된다.In some embodiments, the first supply is connected to a gas source that provides a reactant gas, such as a process gas (eg, metallo-organic compound), and the second supply is a gas that provides a dry gas, such as a rare gas. connected to the source.
일부 실시형태들에서, 가스 공급부들은 하부 가스 공급부들로서 역할을 하고, 가스 주입구 시스템은, 상부 가스 공급부들을 더 포함하며, 상부 가스 공급부들은 제 3 가스를 튜브형 가스 매니폴드 도관 안으로 공급하기 위한 제 3 공급부 및 제 4 가스를 튜브형 가스 매니폴드 도관 안으로 공급하기 위한 제 4 공급부를 포함하며, 상부 가스 공급부들의 각각은 튜브형 가스 매니폴드 도관의 제 2 축 방향 포지션에서 튜브형 가스 매니폴드 도관에 연결된 둘 이상의 주입 포트들을 가지며, 제 2 축 방향 포지션은 제 1 축 방향 포지션의 상류에 위치된다.In some embodiments, the gas supplies serve as bottom gas supplies, and the gas inlet system further includes top gas supplies, the top gas supplies being a third for supplying a third gas into the tubular gas manifold conduit. a supply and a fourth supply for supplying a fourth gas into the tubular gas manifold conduit, wherein each of the upper gas supplies is at least two connected to the tubular gas manifold conduit in a second axial position of the tubular gas manifold conduit having injection ports, wherein the second axial position is located upstream of the first axial position.
일부 실시형태들에서, 튜브형 가스 매니폴드 도관은 제 1 축 방향 포지션의 하류에서의 제 1 지름, 제 1 축 방향 포지션에서의 제 2 지름, 및 제 2 축 방향 포지션에서의 제 3 지름을 가지며, 상기 제 3 지름은 제 1 지름보다 작은 제 2 지름보다 작아서, 제 3 및 제 4 공급부들의 주입 포트들은, 예를 들어, 튜브형 가스 매니폴드 도관의 축에 대해 약 0° 내지 약 45°의 각도에서 튜브형 가스 매니폴드 도관에 연결될 수 있다. 일부 실시형태들에서, 제 3 지름 (내부 지름) 은 약 6 mm ±50%이다.In some embodiments, the tubular gas manifold conduit has a first diameter downstream of the first axial position, a second diameter at the first axial position, and a third diameter at the second axial position, The third diameter is less than a second diameter, which is smaller than the first diameter, such that the injection ports of the third and fourth feeds are, for example, at an angle of from about 0° to about 45° with respect to the axis of the tubular gas manifold conduit. may be connected to a tubular gas manifold conduit in the In some embodiments, the third diameter (inner diameter) is about 6 mm ± 50%.
일부 실시형태들에서, 제 3 및 제 4 공급부들 각각의 주입 포트들은 튜브형 가스 매니폴드 도관의 축에 대해 약 0° 내지 약 90°, 바람직하게는 0° 내지 약 45°의 각도에서 튜브형 가스 매니폴드 도관에 연결된다. 제 3 및 제 4 공급부들 각각의 주입 포트들은 튜브형 가스 매니폴드 도관의 축에 대략 평행하게 (약 0° 내지 약 5°의 각도에서) 튜브형 가스 매니폴드 도관에 연결되고, 제 1 및 제 2 공급부들 각각의 주입 포트들은 튜브형 가스 매니폴드 도관의 축에 대해 약 15° 내지 약 25°의 각도에서 튜브형 가스 매니폴드 도관에 연결된다. 일부 실시형태들에서, 제 3 및 제 4 공급부들의 주입 포트들의 수는 2 내지 10, 바람직하게는 4 내지 8이다. 일부 실시형태들에서, 제 3 및 제 4 공급부들 각각의 주입 포트들의 수는 제 1 및 제 2 공급부들 각각의 주입 포트들의 수 이하이다. 일부 실시형태들에서, 제 1 축 방향 포지션과 제 2 축 방향 포지션 사이의 거리는 약 30 mm ±50%이다. 일부 실시형태들에서, 튜브형 가스 매니폴드 도관의 제 1 축 방향 포지션과 하부 말단 사이의 길이는 튜브형 가스 매니폴드 도관의 약 115 mm ±50%이다.In some embodiments, the injection ports of each of the third and fourth feeds are at an angle from about 0° to about 90°, preferably from 0° to about 45° relative to the axis of the tubular gas manifold conduit to the tubular gas manifold. connected to the fold conduit. The injection ports of each of the third and fourth feeds are connected to the tubular gas manifold conduit approximately parallel to the axis of the tubular gas manifold conduit (at an angle of about 0° to about 5°), the first and second feeds being connected to the tubular gas manifold conduit. The injection ports of each of the sections are connected to the tubular gas manifold conduit at an angle of about 15° to about 25° relative to the axis of the tubular gas manifold conduit. In some embodiments, the number of injection ports of the third and fourth feeds is between 2 and 10, preferably between 4 and 8. In some embodiments, the number of injection ports of each of the third and fourth supplies is less than or equal to the number of injection ports of each of the first and second supplies. In some embodiments, the distance between the first axial position and the second axial position is about 30 mm ± 50%. In some embodiments, the length between the first axial position of the tubular gas manifold conduit and the lower end is about 115 mm ± 50% of the tubular gas manifold conduit.
일부 실시형태들에서, 제 3 공급부는 제 3 가스의 유입을 위한 유입구와 제 3 공급부의 둘 이상의 주입 포트들에 각각 연결된 제 3 가스의 유출을 위한 다수의 유출구들을 갖는 C-자형 공통 채널을 더 구비하고, 제 4 공급부는 제 4 가스의 유입을 위한 유입구와 제 4 공급부의 둘 이상의 주입 포트들에 각각 연결된 제 4 가스의 유출을 위한 다수의 유출구들을 갖는 C-자형 공통 채널을 더 구비한다. C-자형 공통 채널은 튜브형 가스 매니폴드 도관을 둘러싼다. 대안으로, C-형상은 튜브형 가스 매니폴드 도관을 둘러싸는 완전한 원형 형상일 수 있다.In some embodiments, the third supply further comprises a C-shaped common channel having an inlet for the inlet of the third gas and a plurality of outlets for the outlet of the third gas each connected to the two or more injection ports of the third supply. and the fourth supply portion further includes a C-shaped common channel having an inlet for the inflow of the fourth gas and a plurality of outlets for the outflow of the fourth gas respectively connected to the two or more injection ports of the fourth supply. A C-shaped common channel surrounds the tubular gas manifold conduit. Alternatively, the C-shape may be a complete circular shape surrounding the tubular gas manifold conduit.
일부 실시형태들에서, 가수 주입구 시스템은, 보조 가스를 튜브형 가스 매니폴드 도관 안으로 공급하기 위한 상단 공급부를 더 포함하며, 상단 공급부는 튜브형 가스 매니폴드 도관의 상류 말단에서 튜브형 가스 매니폴드 도관에 연결된 주입 포트를 갖는다. 일부 실시형태들에서, 상단 공급부는 건조 가스를 제공하는 가스 소스에 연결된다. 일부 실시형태들에서, 상단 공급부의 주입 포트의 내부 지름은 약 6 mm ±50%인데, 이는 다른 공급부들의 주입 포트의 내부 지름보다 크다. 튜브형 가스 매니폴드 도관, 주입 포트들 등은 알루미늄 합금, 스테인레스 강철 등과 같은 임의의 적합한 재료로 만들어질 수도 있다.In some embodiments, the singer inlet system further comprises a top supply for supplying auxiliary gas into the tubular gas manifold conduit, the top supply being an injection connected to the tubular gas manifold conduit at an upstream end of the tubular gas manifold conduit. have a port In some embodiments, the top supply is connected to a gas source that provides drying gas. In some embodiments, the inner diameter of the infusion port of the top feed is about 6 mm ± 50%, which is greater than the inner diameter of the infusion port of the other feeds. The tubular gas manifold conduit, injection ports, etc. may be made of any suitable material, such as aluminum alloy, stainless steel, or the like.
일부 실시형태들에서, 웨이퍼 프로세싱 반응기는 원자 층 증착 (ALD) 을 위한 반응기 또는 화학 기상 증착 (CVD) 을 위한 반응기이고, 튜브형 가스 매니폴드 도관은 ALD 또는 CVD를 위해 반응기의 가스 주입구 포트에 연결된다. 게다가, 반응기는 에칭, 어닐링 등을 위한 반응기일 수 있다. 예를 들어, 본원에서 개시된 가스 혼합 시스템을 사용하여, ALD의 경우, 건조 가스 및 공정 가스의 혼합이 수행될 수도 있고, CVD의 경우, 상이한 공정 가스들 및 상이한 건조 가스들의 혼합이 수행될 수도 있다.In some embodiments, the wafer processing reactor is a reactor for atomic layer deposition (ALD) or a reactor for chemical vapor deposition (CVD), and the tubular gas manifold conduit is connected to the gas inlet port of the reactor for ALD or CVD . Furthermore, the reactor may be a reactor for etching, annealing, and the like. For example, using the gas mixing system disclosed herein, for ALD, mixing of dry gas and process gas may be performed, and for CVD, mixing of different process gases and different dry gases may be performed. .
일부 실시형태들에서, 튜브형 가스 매니폴드 도관은 가스 주입구 포트를 샤워헤드 형인 웨이퍼 프로세싱 반응기의 웨이퍼 수용 영역 위쪽에서 중앙에 배치하도록 된다.In some embodiments, the tubular gas manifold conduit is adapted to center the gas inlet port above the wafer receiving area of a wafer processing reactor that is showerhead type.
본 발명의 다른 양태에서, 본원에서 개시된 가스 주입구 시스템을 사용하여 혼합된 가스를 웨이퍼 프로세싱 반응기로 공급하는 방법이, (a) 제 1 가스를 제 1 공급부의 주입 포트들을 통해 튜브형 가스 매니폴드 도관으로 공급하는 한편, 제 2 가스를 제 2 공급부의 주입 포트들을 통해 튜브형 가스 매니폴드 도관으로 공급하며, 이로 인해 제 1 가스 및 제 2 가스가 튜브형 가스 매니폴드 도관 내부에서 혼합되게 하는 것; 및 (b) 웨이퍼 프로세싱 반응기에 로드된 기판 상에 필름을 증착하기 위해 혼합된 가스를 가스 주입구 시스템을 통해 웨이퍼 프로세싱 반응기로 공급하는 것을 포함한다.In another aspect of the present invention, a method of supplying a mixed gas to a wafer processing reactor using a gas inlet system disclosed herein comprises: (a) a first gas through the inlet ports of the first supply into a tubular gas manifold conduit while supplying the second gas to the tubular gas manifold conduit through the injection ports of the second supply portion, thereby causing the first gas and the second gas to mix within the tubular gas manifold conduit; and (b) supplying the mixed gas to the wafer processing reactor through a gas inlet system to deposit a film on the substrate loaded into the wafer processing reactor.
일부 실시형태들에서, 튜브형 가스 매니폴드 도관은 튜브형 가스 매니폴드 도관의 상류 말단에서 튜브형 가스 매니폴드 도관에 연결된 주입 포트를 갖는 상단 공급부를 더 포함하며, 그 방법은 불활성 가스를 상단 공급부의 주입 포트를 통해 튜브형 가스 매니폴드 도관으로 공급하면서 튜브형 가스 매니폴드 도관에 제 1 및 제 2 가스들을 공급하는 것을 더 포함하며, 제 1 및 제 2 가스들 중 하나는 공정 가스이다.In some embodiments, the tubular gas manifold conduit further comprises a top supply having an injection port connected to the tubular gas manifold conduit at an upstream end of the tubular gas manifold conduit, the method comprising: introducing an inert gas to the injection port of the top supply supplying the first and second gases to the tubular gas manifold conduit while supplying to the tubular gas manifold conduit via
일부 실시형태들에서, 그 필름은 제 1 조건들 하에서 증착되고, 그 방법은 제 1 조건들 하에서 증착된 필름의 균일도에 비해 필름의 개선된 균일도를 갖는 필름을 기판 상에 증착하기 위해서, 상단 공급부로부터의 불활성 가스의 흐름 율을 변경하면서 불활성 가스의 흐름 율을 제외한 제 1 조건들을 유지하는 것을 더 포함한다.In some embodiments, the film is deposited under first conditions, the method comprising: a top feed to deposit a film on a substrate having improved uniformity of the film compared to the uniformity of the film deposited under the first conditions; and maintaining the first conditions except for the flow rate of the inert gas while changing the flow rate of the inert gas from the
일부 실시형태들에서, 가스 공급부들은 하부 가스 공급부들로서 역할을 하고, 가스 주입구 시스템은 제 3 공급부 및 제 4 공급부를 포함하는 상부 가스 공급부들을 더 포함하며, 상부 가스 공급부들의 각각은 튜브형 가스 매니폴드 도관의 제 2 축 방향 포지션에서 튜브형 가스 매니폴드 도관에 연결된 둘 이상의 주입 포트들을 갖고, 제 2 축 방향 포지션은 제 1 축 방향 포지션의 상류에 위치되며, 그 방법은 제 3 가스 및 제 4 가스를 각각 제 3 공급부 및 제 4 공급부의 주입 포트들을 통해 튜브형 가스 매니폴드 도관으로 공급하면서 튜브형 가스 매니폴드 도관으로 제 1 및 제 2 가스들 중 하나를 공급하는 것을 더 포함하며, 제 1 및 제 2 가스들 중 하나는 공정 가스이다.In some embodiments, the gas supplies serve as bottom gas supplies, and the gas inlet system further includes top gas supplies including a third and a fourth supply, each of the top gas supplies being a tubular gas manifold having two or more injection ports connected to the tubular gas manifold conduit at a second axial position of the fold conduit, the second axial position being located upstream of the first axial position, the method comprising: a third gas and a fourth gas supplying one of the first and second gases to the tubular gas manifold conduit while supplying the first and second gases to the tubular gas manifold conduit through the injection ports of the third and fourth supply units, respectively; One of the gases is a process gas.
일부 실시형태들에서, 제 1 공급부의 전체 흐름 율은 약 0.1 slm 내지 약 5.0 slm이며, 제 2 공급부의 전체 흐름 율은 약 0.1 slm 내지 약 5.0 slm이며, 제 3 공급부의 전체 흐름 율은 약 0.1 slm 내지 약 5.0 slm이고, 제 4 공급부의 전체 흐름 율은 약 0.1 slm 내지 약 5.0 slm이다.In some embodiments, the total flow rate of the first feed is between about 0.1 slm and about 5.0 slm, the total flow rate of the second feed is between about 0.1 slm and about 5.0 slm, and the total flow rate of the third feed is about 0.1 slm to about 5.0 slm, and the total flow rate of the fourth feed is from about 0.1 slm to about 5.0 slm.
일부 실시형태들에서, 증착의 유형에 의존하여, 제 1 및 제 2 공급부들은, 예컨대, 펄스 식으로 공급되는 반면, 제 3 및 제 4 공급부들은 지속적으로 공급된다. 공정 온도가 24℃ 내지 약 500℃의 범위에 있을 수도 있는 ALD의 경우, 하나의 사이클의 지속기간은 약 0.01 초 내지 약 10.0 초 (예컨대, 약 0.5 초 내지 약 2.0 초) 의 범위에 있을 수도 있다.In some embodiments, depending on the type of deposition, the first and second feeds are fed, eg, pulsed, while the third and fourth feeds are fed continuously. For ALD, where the process temperature may range from 24° C. to about 500° C., the duration of one cycle may range from about 0.01 seconds to about 10.0 seconds (eg, about 0.5 seconds to about 2.0 seconds). .
본 발명은 본 발명을 제한하려고 의도되지 않은 도면들을 참조하여 상세히 설명될 것이다.The invention will be described in detail with reference to the drawings, which are not intended to limit the invention.
도 3은 본 발명의 일 실시형태에 따른 가스 혼합 시스템을 도시하는 개략도이다. 도 4는 본 발명의 일 실시형태에 따른, 도 3에 예시된 가스 혼합 시스템의 가스 주입 포트들을 도시하는 개략도이다. 가스 주입구 시스템 (31) 은 웨이퍼 프로세싱 반응기의 가스 주입구 포트에 연결되도록 된 튜브형 가스 매니폴드 도관 (32); 제 1 가스를 공급하기 위한 제 1 공급부 (33); 제 2 가스를 공급하기 위한 제 2 공급부 (34); 제 3 가스를 공급하기 위한 제 3 공급부 (35); 제 4 가스를 공급하기 위한 제 4 공급부 (36); 및 제 5 가스를 공급하기 위한 상단 공급부 (37) 를 포함한다. 제 1 공급부 (33) 는 제 1 유입구 (33a), 제 1 유입구 (33a) 가 연결되는 제 1 C-자형 유통 채널 (46), 그리고 제 1 C-자형 유통 채널 (46) 로부터 각각 연결 포인트들 (47a, 47b, 및 47e) (연결 포인트들 (47c 및 47d) 은 튜브형 가스 매니폴드 도관 (32) 뒤에 있음) 을 통해 연장하고 제 1 축 방향 포지션 (51) 에서 튜브형 가스 매니폴드 도관 (32) 에 연결된 개별 제 1 다수의 유출구들 (40a 내지 40e) 의 하부 말단들인 개별 제 1 주입 포트들을 통해 튜브형 가스 매니폴드 도관 (32) 에 연결된 제 1 다수의 유출구들 (40a, 40b, 및 40e) (유출구들 (40c 및 40d) 이 튜브형 가스 매니폴드 도관 (32) 뒤에 있음) 을 포함한다.3 is a schematic diagram illustrating a gas mixing system according to an embodiment of the present invention. FIG. 4 is a schematic diagram illustrating gas injection ports of the gas mixing system illustrated in FIG. 3 , in accordance with an embodiment of the present invention; The
제 2 공급부 (34) 는 제 2 유입구 (34a), 제 2 유입구 (34a) 가 연결되는 제 2 C-자형 유통 채널 (38), 그리고 제 2 C-자형 유통 채널 (38) 로부터 각각 연결 포인트들 (48a 및 48e) (연결 포인트들 (48b, 48c, 및 48d) 은 튜브형 가스 매니폴드 도관 (32) 뒤에 있음) 을 통해 연장하고 제 1 축 방향 포지션 (51) 에서 튜브형 가스 매니폴드 도관 (32) 에 연결된 개별 제 2 다수의 유출구들 (41a 내지 41e) 의 하부 말단들인 개별 제 2 주입 포트들을 통해 튜브형 가스 매니폴드 도관 (32) 에 연결된 제 2 다수의 유출구들 (41a 및 41e) (유출구들 (41b, 41c, 및 41d) 이 튜브형 가스 매니폴드 도관 (32) 뒤에 있음) 을 포함한다.The
제 1 다수의 유출구들 (40a 내지 40e) 과 제 2 다수의 유출구들 (41a 내지 41e) 은 튜브형 가스 매니폴드 도관 (32) 의 축 주위에서 동일한 간격으로 번갈아 배치되며, 즉, 제 1 주입 포트들과 제 2 주입 포트들은 제 1 축 방향 포지션 (51) 에서 튜브형 가스 매니폴드 도관 (32) 의 둘레를 따라 번갈아 그리고 균일하게 분포된다. 제 1 및 제 2 C-자형 분배 채널들 (46, 38) 이 사용되므로, 제 1 다수의 유출구들 (40a 내지 40e) 과 제 2 다수의 유출구들 (41a 내지 41e) 은 튜브형 가스 매니폴드 도관 (32) 의 축에 대해 동일한 각도 (대략 20°) 에서 튜브형 가스 매니폴드 도관 (32) 에 연결된다.The first plurality of
제 3 공급부 (35) 는 제 3 유입구 (35a), 제 3 유입구 (35a) 가 연결되는 제 3 C-자형 유통 채널 (44), 그리고 제 3 C-자형 유통 채널 (44) 로부터 각각 연장하고 제 2 축 방향 포지션 (52) 에서 튜브형 가스 매니폴드 도관 (32) 에 연결된 개별 제 3 다수의 유출구들 (42a 내지 42e) 의 하부 말단들인 개별 제 3 주입 포트들을 통해 튜브형 가스 매니폴드 도관 (32) 에 연결된 제 3 다수의 유출구들 (42a 및 42e) (유출구들 (42b, 42c, 및 42d) 은 튜브형 가스 매니폴드 도관 (32) 뒤에 있음) 을 포함한다.The
제 4 공급부 (36) 는 제 4 유입구 (36a), 제 4 유입구 (36a) 가 연결되는 제 4 C-자형 유통 채널 (39), 그리고 제 4 C-자형 유통 채널 (39) 로부터 각각 연장하고 제 2 축 방향 포지션 (52) 에서 튜브형 가스 매니폴드 도관 (32) 에 연결된 개별 제 4 다수의 유출구들 (43a 내지 43e) 의 하부 말단들인 개별 제 4 주입 포트들을 통해 튜브형 가스 매니폴드 도관 (32) 에 연결된 제 4 다수의 유출구들 (43a, 43b, 및 43e) (유출구들 (43c 및 43d) 은 튜브형 가스 매니폴드 도관 (32) 뒤에 있음) 을 포함한다.The
제 3 다수의 유출구들 (42a 내지 42e) 과 제 4 다수의 유출구들 (43a 내지 43e) 은 튜브형 가스 매니폴드 도관 (32) 의 축 주위에서 동일한 간격으로 번갈아 배치되며, 즉, 제 3 주입 포트들과 제 4 주입 포트들은 제 2 축 방향 포지션 (52) 에서 튜브형 가스 매니폴드 도관 (32) 의 둘레를 따라 번갈아 그리고 균일하게 분포된다. 제 3 및 제 4 C-자형 분배 채널들 (44, 39) 이 상이한 축 방향 포지션들에 배치되므로, 제 3 다수의 유출구들 (42a 내지 42e) 과 제 4 다수의 유출구들 (43a 내지 43e) 은 튜브형 가스 매니폴드 도관 (32) 에 동일한 각도로, 즉, 튜브형 가스 매니폴드 도관 (32) 의 축에 대략 평행하게 연결된다.The third plurality of
상단 주입 포트 (37) 는 튜브형 가스 매니폴드 도관 (32) 의 상단에 연결된다.The
상단 주입 포트 (37) 의 내부 지름은 약 6 mm이며, 제 1 내지 제 4 주입 포트들의 내부 지름은 약 3 mm이고, 제 1 축 방향 포지션 (51) 하류의 튜브형 가스 매니폴드 도관의 내부 지름은 약 14 mm이다. 튜브형 가스 매니폴드 도관의 제 1 축 방향 포지션에서부터 하부 말단까지의 길이는 약 115 mm이다.The inner diameter of the
도 5는 본 발명의 일 실시형태에 따른 도 3에 예시된 가스 혼합 시스템의 내부 벽들 상의 가스 농도들을 표현하는 전산 유체 동역학 (computational fluid dynamics; CFD) 시뮬레이션 (ANSYS Fluent) 을 사용하여 획득된 이미지를 도시하는데, 그 컬러들은 공정 가스 종 (species) 의 농도를 해석하는 공정 가스 몰 분율들의 범위들을 표현하며, 청색 내지 적색의 스케일에서, 청색은 가스 종이 없다는 것을 나타내는 반면 적색은 가스 종의 높은 농도를 나타낸다. 이 실시형태에서, 제 1 공급부 (33), 제 3 공급부 (35), 제 4 공급부 (36), 및 상단 공급부 (37) 는 Ar을 공급하는 반면, 제 2 공급부 (34) 는 공정 가스를 공급하는데, 적색의 영역은 공정 가스 중 높은 농도의 가스 종을 보여주며, 청색의 영역은 공정 가스 중 무 (no) 농도의 가스 종을 보여주고, 녹색의 영역은 공정 가스 중 중간 농도의 가스 종을 보여준다. 도 5로부터 알 수 있듯이, 공정 가스 중 높은 농도의 가스 종을 갖는 가스는 제 2 C-자형 유통 채널을 포함한 제 2 공급부 (34) 의 벽 상에 존재한다. 그러나, 하나의 축 방향 흐름 (상단 공급부 (37)) 과 Ar 가스의 3 개의 둘레상 (circumferential) 흐름들 (제 1, 제 3, 및 제 4 공급부들 (33, 35, 36)) 과 공정 가스의 하나의 둘레상 흐름 (제 2 공급부 (34)) 의 조합 때문에, 가스들은 제 1 축 방향 포지션의 하류에서 즉시 잘 혼합되고, 그러면 잘 혼합된 희석된 공정 가스가 튜브형 가스 매니폴드 도관 (32) 의 하부 말단을 통해 웨이퍼 프로세싱 반응기의 가스 주입구 포트에 공급된다.5 is an image obtained using a computational fluid dynamics (CFD) simulation (ANSYS Fluent) representing gas concentrations on interior walls of the gas mixing system illustrated in FIG. 3 in accordance with an embodiment of the present invention; shown, where the colors represent ranges of process gas mole fractions that interpret the concentration of the process gas species, on a scale of blue to red, where blue represents no gas species while red represents a high concentration of gas species. indicates. In this embodiment, the
도 6a는 본 발명의 실시형태에 따른 튜브형 매니폴드 도관의 하부 말단 (즉, 반응기 섹션의 유입구) 에서 취해진 튜브형 매니폴드 도관의 단면 상의 가스 농도들을 나타내는, 전산 유체 동역학 (CFD) 시뮬레이션을 사용하여 획득된 이미지를 도시한다. 이 실시형태에서, 가스 혼합 시스템은, 3 개의 가스 주입 포트들이 제 1 축 방향 포지션에서 각각의 제 1 및 제 2 공급부들에 그리고 제 2 축 방향 포지션에서 각각의 제 3 및 제 4 공급부들에 제공된다는 것을 제외하면 도 3 및 도 4에 예시된 구성을 갖는다. 가스들은 도 5에서와 동일한 방식으로 공급된다. 도 6a로부터 알 수 있듯이, 공정 가스의 가스 종의 농도는 중앙에서 그리고 중앙에서부터 제 2 공급부에 대한 주입 포트들의 로케이션들에 대응하는 3 개의 방사 방향들에서 내부 벽 쪽으로 높아서, 각각의 공급부에 대해 3 개의 주입 포트들의 구성이 더 긴 시간 규모의 가스 확산을 필요로 할 수도 있다는 것을 나타낸다. 도 6a의 분포도로부터 계산된 가스 혼합의 불-균일도 (non-uniformity) 는 36.0 %이다. 불-균일도 (UN) 는 다음과 같이 계산된다: NU = 100 x [1 - ((최대 신호 - 최소 신호) / (신호의 평균 값))]6A is obtained using computational fluid dynamics (CFD) simulation, showing gas concentrations on a cross-section of a tubular manifold conduit taken at the lower end of the tubular manifold conduit (ie, the inlet of the reactor section) in accordance with an embodiment of the present invention; shows the image. In this embodiment, the gas mixing system provides three gas injection ports to respective first and second feeds in a first axial position and to respective third and fourth feeds in a second axial position. It has the configuration illustrated in FIGS. 3 and 4 except that it is The gases are supplied in the same manner as in FIG. 5 . As can be seen from Figure 6a, the concentration of the gas species of the process gas is high towards the inner wall at the center and in three radial directions corresponding to the locations of the injection ports for the second feed from the center, so that for each feed 3 indicates that the configuration of the injection ports may require longer time scale gas diffusion. The non-uniformity of the gas mixture calculated from the distribution diagram of FIG. 6A is 36.0%. The non-uniformity (UN) is calculated as: NU = 100 x [1 - ((maximum signal - minimum signal) / (average value of signal))]
도 6b는 본 발명의 실시형태에 따른 튜브형 매니폴드 도관의 하부 말단 (즉, 반응기 섹션의 유입구) 에서 취해진 튜브형 매니폴드 도관의 단면 상의 가스 농도들을 나타내는, 전산 유체 동역학 (CFD) 시뮬레이션을 사용하여 획득된 이미지를 도시한다. 이 실시형태에서, 가스 혼합 시스템은 도 3 및 도 4에 예시된 구성을 갖는다 (5 개의 가스 주입 포트들이 제 1 축 방향 포지션에서 각각의 제 1 및 제 2 공급부들에 그리고 제 2 축 방향 포지션에서 각각의 제 3 및 제 4 공급부들에 제공된다). 가스들은 도 5에서와 동일한 방식으로 공급된다. 도 6b로부터 알 수 있듯이, 공정 가스의 가스 종의 농도는 중앙 근처에서만 높아서, 각각의 공급부에 대한 5 개의 주입 포트들의 구성이 가스 확산의 시간 규모를 상당히 감소시킬 수 있다는 것을 나타낸다. 도 6b의 분포도로부터 계산된 가스 혼합물의 불-균일도는 3.4 %이다. 도 6a 및 도 6b로부터 이해될 수 있듯이, 다수의 주입 포트들은 가스 확산의 시간 규모를 감소시키며, 이에 의해 혼합을 개선한다.6B is obtained using a computational fluid dynamics (CFD) simulation, showing gas concentrations on a cross-section of a tubular manifold conduit taken at the lower end of the tubular manifold conduit (ie, the inlet of the reactor section) in accordance with an embodiment of the present invention; shows the image. In this embodiment, the gas mixing system has the configuration illustrated in FIGS. 3 and 4 (five gas injection ports in a first axial position to respective first and second feeds in a first axial position and in a second axial position. each of the third and fourth feeds). The gases are supplied in the same manner as in FIG. 5 . As can be seen from Figure 6b, the concentration of gas species in the process gas is only high near the center, indicating that the configuration of five injection ports for each feed can significantly reduce the time scale of gas diffusion. The non-uniformity of the gas mixture calculated from the distribution diagram of FIG. 6B is 3.4%. As can be appreciated from FIGS. 6A and 6B , multiple injection ports reduce the time scale of gas diffusion, thereby improving mixing.
도 7a는 본 발명의 일 실시형태에 따른 튜브형 매니폴드 도관의 하부 말단에서 취해진 튜브형 매니폴드 도관의 단면 상의 가스 농도들을 나타내는, 전산 유체 동역학 (CFD) 시뮬레이션을 사용하여 획득된 이미지를 도시한다. 이 실시형태에서, 가스 혼합 시스템은, 5 개의 가스 주입 포트들이 제 1 축 방향 포지션에서 제 1 및 제 2 공급부들 각각에 대해 (튜브형 가스 매니폴드 도관의 축에 대하여) 25°의 각도로 제공된다는 것을 제외하면 도 3 및 도 4에 예시된 구성을 갖는다. 가스들은 도 5에서와 동일한 방식으로 공급된다. 도 7a로부터 알 수 있듯이, 공정 가스의 가스 종의 농도는 중앙에서 높은 반면 공정 가스의 가스 종의 농도는 내부 벽을 따라 낮아서, 각각의 공급부에 대해 25°의 각도로 설정된 5 개의 주입 포트들의 구성은 가스 확산의 시간 규모를 적당히 감소시킬 수 있다는 것을 나타낸다. 도 7a의 분포도로부터 계산된 가스 혼합의 불-균일도는 10%이다.7A shows an image obtained using computational fluid dynamics (CFD) simulations showing gas concentrations on a cross-section of a tubular manifold conduit taken at the lower end of the tubular manifold conduit in accordance with an embodiment of the present invention. In this embodiment, the gas mixing system provides that five gas injection ports are provided at an angle of 25° (relative to the axis of the tubular gas manifold conduit) relative to each of the first and second feeds in a first axial position. Except for that, it has the configuration illustrated in FIGS. 3 and 4 . The gases are supplied in the same manner as in FIG. 5 . As can be seen from Figure 7a, the concentration of gas species in the process gas is centrally high while the concentration of gas species in the process gas is low along the inner wall, so the configuration of five injection ports set at an angle of 25° to each feed. indicates that it is possible to moderately reduce the time scale of gas diffusion. The non-uniformity of the gas mixture calculated from the distribution diagram of FIG. 7A is 10%.
3 개의 가스 주입 포트들이 제 1 축 방향 포지션에서 각각의 제 1 및 제 2 공급부들에 대해 20°의 각도로 제공되는 도 3 및 도 4에 예시된 구성을 가스 혼합 시스템이 갖는 일 실시형태를 도시하는 도 6b로 되돌아가면, 주입 포트들의 각도가 20° (가스 혼합의 불-균일도가 3.4%) 인 경우, 가스 확산은 도 7a에 예시된 바와 같이 주입 포트들의 각도가 25°인 경우 (가스 혼합의 불-균일도는 10%임) 보다 더 많이 진행한다.Shows one embodiment in which the gas mixing system has the configuration illustrated in FIGS. 3 and 4 in which three gas injection ports are provided at an angle of 20° with respect to the respective first and second feeds in a first axial position. 6B, when the angle of the injection ports is 20° (the non-uniformity of the gas mixing is 3.4%), gas diffusion occurs when the angle of the injection ports is 25° as illustrated in FIG. of non-uniformity is 10%).
도 7b는 본 발명의 일 실시형태에 따른 튜브형 매니폴드 도관의 하부 말단에서 취해진 튜브형 매니폴드 도관의 단면 상의 가스 농도들을 나타내는, 전산 유체 동역학 (CFD) 시뮬레이션을 사용하여 획득된 이미지를 도시한다. 이 실시형태에서, 가스 혼합 시스템은, 5 개의 가스 주입 포트들이 제 1 축 방향 포지션에서 제 1 및 제 2 공급부들 각각에 대해 (튜브형 가스 매니폴드 도관의 축에 대하여) 15°의 각도로 제공된다는 것을 제외하면 도 3 및 도 4에 예시된 구성을 갖는다. 가스들은 도 5에서와 동일한 방식으로 공급된다. 도 7b로부터 알 수 있듯이, 공정 가스의 가스 종의 농도는 특히 주입 포트들의 로케이션들에 실질적으로 대응하는 5 개의 스폿들에서 내부 벽을 따라 높은 반면 공정 가스의 가스 종의 농도는 중앙에서 낮아서, 각각의 공급부에 대해 15°의 각도로 설정된 5 개의 주입 포트들의 구성은 가스 확산의 시간 규모를 적당히 감소시킬 수 있다는 것을 나타낸다. 도 7b의 분포도로부터 계산된 가스 혼합의 불-균일도는 9.7%이다.7B shows an image obtained using computational fluid dynamics (CFD) simulation showing gas concentrations on a cross-section of a tubular manifold conduit taken at the lower end of the tubular manifold conduit according to an embodiment of the present invention. In this embodiment, the gas mixing system is such that five gas injection ports are provided at an angle of 15° (relative to the axis of the tubular gas manifold conduit) relative to each of the first and second feeds in a first axial position. Except for that, it has the configuration illustrated in FIGS. 3 and 4 . The gases are supplied in the same manner as in FIG. 5 . As can be seen from FIG. 7b , the concentration of the gas species of the process gas is high along the inner wall, in particular at five spots substantially corresponding to the locations of the injection ports, whereas the concentration of the gas species of the process gas is centrally low, each It is shown that the configuration of the five injection ports set at an angle of 15° with respect to the supply of The non-uniformity of the gas mixture calculated from the distribution diagram of FIG. 7B is 9.7%.
도 7a, 도 6b, 및 도 7b로부터 이해될 수도 있듯이, 주입 포트들의 배향 또는 각도는 주입 포트들의 부근에서 혼합에 대량으로 영향을 미칠 수 있고, 따라서, 농도 프로파일은 중앙에서의 더 높은/더 낮은 농도가 상이한 각도들에 의해 설정될 수 있게 조정될 수 있고, 혼합이 개선되기 위한 최적 각도가 주어진 공정 조건들에 대해 존재한다.As may be understood from FIGS. 7A , 6B, and 7B , the orientation or angle of the injection ports can significantly affect the mixing in the vicinity of the injection ports, and thus the concentration profile is higher/lower in the center. The concentration can be adjusted so that it can be set by different angles, and there is an optimal angle for mixing to be improved for given process conditions.
가스들의 혼합은 주로 가스 확산에 의해 달성되고, 그러므로 확산이 일어나는 거리를 최소화하는 것이 필요하다. 이것이 매니폴드의 둘레 전체에 걸쳐 균일하게 분포된 다수의 주입 포트들이 효과적인 이유이며, 이에 의해 둘레상 거리를 최소화한다. 덧붙여서, 가스들을 효율적으로 혼합하기 위해, 확산이 일어나는 방사상 거리를 최소하는 것이 필요하다. 도 15는 (A) 주입 포트들이 내부 벽을 따라 위치되는 경우, (B) 주입 포트들이 중앙과 내부 벽 사이의 중간에 위치되는 경우, 및 (C) 주입 포트들이 중앙에 위치되는 경우의 주입 포트들로부터 확산 포인트들까지의 거리들을 개략적으로 예시하는 튜브형 매니폴드 도관의 단면도들을 도시한다. 도면들에서의 굵은 점들 (151) 은 튜브형 가스 매니폴드 도관의 둘레를 나타내는 원 (152) 에 대한 주입 포트들의 진입 포인트들을 나타낸다. (A), (B), 및 (C) 에서의 확산의 방사상 거리는 각각 R (반지름), R/2, 및 R이다. 또한, (A), (B), 및 (C) 에서의 확산의 최대 거리는 각각 R, , 및 R이다. 주입 포트들의 진입 포인트들이 이들 도면들에서 중앙과 내부 벽 사이의 중간인 경우, 확산의 거리는 최소이며, 이에 의해 가스들의 혼합을 개선한다. 적합한 방사상 거리는 가스가 매니폴드에 들어가는 경우의 가스의 속도 (이 가스 속도는 가스의 흐름 율, 압력, 온도, 유형 등과 같은 공정 조건들에 의해 결정됨), 주입 포트들의 내부 지름, 매니폴드의 축에 대한 주입 포트들의 배향, 매니폴드의 지름 등에 의존한다. 예를 들어, 샤워헤드 형 반응기들과 비교하여, 공정 조건들, 포트들의 지름, 및 매니폴드의 지름은 상이하고 (예컨대, 샤워헤드 형 반응기: 운반 가스 He, 압력 700 Pa, 포트들의 지름 5 mm, 매니폴드의 지름 20 mm; 다른 샤워헤드 형 반응기: 운반 가스 Ar, 압력 422 Pa, 포트들의 지름 3 mm, 매니폴드의 지름 14 mm), 결과적으로 포트들의 배향은 상이하게 설정된다. 예를 들어, 주입 포트들의 각도가 바람직하게는 450-mm 웨이퍼를 위한 샤워헤드 형 반응기 (예컨대, EmerALD®) 에 대해 약 15° 내지 약 25°이고, 450-mm 웨이퍼를 위한 다른 샤워헤드 형 반응기 (예컨대, Eagle®) 에 대해 약 90°이다.The mixing of gases is mainly achieved by gas diffusion, and therefore it is necessary to minimize the distance over which diffusion occurs. This is why multiple injection ports evenly distributed throughout the perimeter of the manifold are effective, thereby minimizing the perimeter distance. In addition, in order to efficiently mix gases, it is necessary to minimize the radial distance over which diffusion occurs. 15 shows (A) the injection ports when they are located along the inner wall, (B) when the injection ports are located halfway between the center and the inner wall, and (C) when the injection ports are located centrally; Shows cross-sectional views of a tubular manifold conduit schematically illustrating distances from s to diffusion points.
도 8a는 공정 가스가 튜브형 가스 매니폴드 도관의 하부 축 방향 포지션에서 20°의 각도로 배치된 가스 주입 포트들로부터 도입되는 본 발명의 일 실시형태에 따른 가스 혼합 시스템의 벽들 상의 가스 농도들을 나타내는, 전산 유체 동역학 (CFD) 을 사용하여 획득된 이미지를 도시한다. 도 8b는 도 8a에 예시된 실시형태에 따른 튜브형 매니폴드 도관의 하부 말단에서 취해진 튜브형 매니폴드 도관의 단면 상의 가스 농도들을 나타내는, 전산 유체 동역학 (CFD) 시뮬레이션을 사용하여 획득된 이미지를 도시한다. 이 실시형태에서, 가스 혼합 시스템은 도 3 및 도 4에 예시된 것과 유사한 구성을 갖는다 (C-자형 분배 채널들이 생략된다). 가스들은 도 5에서와 동일한 방식으로 공급된다. 도 8a 및 도 8b로부터 알 수 있듯이, 공정 가스의 가스 종의 농도는 매니폴드의 중앙과 둘레 사이에서 높은 반면, 공정 가스의 가스 종의 농도는 중앙의 작은 영역에서 낮아서, 이 구성은 가스 확산의 시간 규모를 효과적으로 감소시켜, 가스들의 혼합을 개선할 수 있다는 것을 나타낸다. 도 8b의 분포도로부터 계산된 가스 혼합의 불-균일도는 3.5%이다.8A shows gas concentrations on the walls of a gas mixing system according to an embodiment of the present invention in which process gas is introduced from gas injection ports disposed at an angle of 20° in a lower axial position of a tubular gas manifold conduit; Images obtained using computational fluid dynamics (CFD) are shown. 8B shows an image obtained using computational fluid dynamics (CFD) simulation, showing gas concentrations on a cross-section of the tubular manifold conduit taken at the lower end of the tubular manifold conduit according to the embodiment illustrated in FIG. 8A . In this embodiment, the gas mixing system has a configuration similar to that illustrated in FIGS. 3 and 4 (C-shaped distribution channels are omitted). The gases are supplied in the same manner as in FIG. 5 . As can be seen from Figures 8a and 8b, the concentration of gas species in the process gas is high between the center and the perimeter of the manifold, whereas the concentration of gas species in the process gas is low in a small area in the center, so that this configuration is a factor of gas diffusion. It effectively reduces the time scale, indicating that the mixing of gases can be improved. The non-uniformity of the gas mixture calculated from the distribution diagram of FIG. 8B is 3.5%.
도 9a는 공정 가스가 튜브형 가스 매니폴드 도관의 상부 축 방향 포지션에서 0°의 각도로 배치된 가스 주입 포트들로부터 도입되는 본 발명의 일 실시형태에 따른 가스 혼합 시스템의 벽들 상의 가스 농도들을 나타내는, 전산 유체 동역학 (CFD) 을 사용하여 획득된 이미지를 도시한다. 도 9b는 도 9a에 예시된 실시형태에 따른 튜브형 매니폴드 도관의 하부 말단에서 취해진 튜브형 매니폴드 도관의 단면 상의 가스 농도들을 나타내는, 전산 유체 동역학 (CFD) 시뮬레이션을 사용하여 획득된 이미지를 도시한다. 이 실시형태에서, 가스 혼합 시스템은 도 8a에서와 동일한 구성을 갖지만, 공정 가스는 상부 축 방향 포지션에서 0°의 각도로 공급된다. 도 9a 및 도 9b로부터 알 수 있듯이, 공정 가스의 가스 종의 농도는 매니폴드의 중앙과 둘레 사이에서 높은 반면, 공정 가스의 가스 종의 농도는 중앙의 작은 영역에서 낮아서, 이 구성은 가스 확산의 시간 규모를 효과적으로 감소시켜, 가스들의 혼합을 개선할 수 있다는 것을 나타낸다. 도 9b의 분포도로부터 계산된 가스 혼합의 불-균일도는 2.1%이다.9A shows gas concentrations on the walls of a gas mixing system according to an embodiment of the present invention in which process gas is introduced from gas injection ports disposed at an angle of 0° in an upper axial position of a tubular gas manifold conduit; Images obtained using computational fluid dynamics (CFD) are shown. 9B shows an image obtained using computational fluid dynamics (CFD) simulations showing gas concentrations on a cross-section of a tubular manifold conduit taken at the lower end of the tubular manifold conduit according to the embodiment illustrated in FIG. 9A . In this embodiment, the gas mixing system has the same configuration as in FIG. 8A, but the process gas is supplied at an angle of 0° in the upper axial position. As can be seen from Figures 9a and 9b, the concentration of gas species in the process gas is high between the center and periphery of the manifold, whereas the concentration of gas species in the process gas is low in a small central region, so that this configuration is a factor in gas diffusion. It effectively reduces the time scale, indicating that the mixing of gases can be improved. The non-uniformity of the gas mixture calculated from the distribution diagram of FIG. 9B is 2.1%.
더 많은 가스 라인들이 요구되는 경우, 이는 쉬운 제조를 위해 튜브형 가스 매니폴드 도관의 상이한 높이들 (2, 3 또는 더 많은 축 방향 포지션들) 에 주입 포트들을 배치함으로써 수용될 수 있다. 도 8a 내지 도 9b로부터 이해될 수 있듯이, 주입 포트들의 구성들은 축 방향 포지션에 의존하여 상이하게 최적화될 수 있다 (예컨대, 상부 축 방향 포지션에서의 주입 포트들의 각도 및 지름과 하부 축 방향 포지션에서의 그것들은 상이하게 또는 별개로 최적화될 수 있다).If more gas lines are required, this can be accommodated by placing the injection ports at different heights (2, 3 or more axial positions) of the tubular gas manifold conduit for easy manufacturing. As can be understood from FIGS. 8A-9B , the configurations of the injection ports can be optimized differently depending on the axial position (eg, the angle and diameter of the injection ports in the upper axial position and the angle and diameter of the injection ports in the lower axial position. they can be optimized differently or separately).
도 10은 도 9a에 예시된 실시형태에 따른 튜브형 매니폴드 도관의 중간에서 취해진 튜브형 매니폴드 도관의 단면 상의 가스 농도들을 나타내는, 전산 유체 동역학 (CFD) 시뮬레이션을 사용하여 획득된 이미지를 도시한다. 중간 포인트는 하부 주입 포트들과 튜브형 가스 매니폴드 도관의 하부 말단 사이의 길이가 115 mm인 경우 (제 1 축 방향 포지션에서) 하부 주입 포트들로부터 56 mm에 위치된다. 도 10로부터 알 수 있듯이, 공정 가스의 가스 종의 농도는 링들의 형태로 불연속적으로 변하여, 주입 포트들로부터 튜브형 가스 매니폴드 도관의 하단 (즉, 반응기의 유입구) 까지의 최소 길이가 가스들의 양호한 혼합을 위해 존재하고 56 mm는 도 9a 및 도 9b에 예시된 115 mm와 비교하여 충분하지 않다는 것을 나타낸다. 도 10의 분포도로부터 계산된 가스 혼합의 불-균일도는 14.8%이다. 최소 길이는 공정 조건들에 주로 의존한다.10 shows an image obtained using computational fluid dynamics (CFD) simulations showing gas concentrations on a cross-section of a tubular manifold conduit taken from the middle of the tubular manifold conduit according to the embodiment illustrated in FIG. 9A . The midpoint is located 56 mm from the lower injection ports (in the first axial position) when the length between the lower injection ports and the lower end of the tubular gas manifold conduit is 115 mm. As can be seen from Figure 10, the concentration of gas species in the process gas varies discontinuously in the form of rings so that the minimum length from the injection ports to the bottom of the tubular gas manifold conduit (ie the inlet of the reactor) is a good number of gases. It is present for mixing and 56 mm is not sufficient compared to the 115 mm illustrated in FIGS. 9A and 9B . The non-uniformity of the gas mixture calculated from the distribution diagram of FIG. 10 is 14.8%. The minimum length depends mainly on the process conditions.
도 11a는 공정 가스가 튜브형 가스 매니폴드 주입구의 하부 축 방향 포지션에 배치된 가스 주입 포트들로부터 도입되는 본 발명의 일 실시형태에 따른 나선형 유사 (helix-like) 설계를 갖는 가스 혼합 시스템의 벽들 상의 가스 농도들을 나타내는, 전산 유체 동역학 (CFD) 을 사용하여 획득된 이미지를 도시한다. 이 실시형태에서, 튜브형 가스 매니폴드 도관의 하부 주입 포트들로부터 하부 말단까지의 길이는 튜브형 가스 매니폴드 도관의 나선형 축을 따라 315 mm이고, 튜브형 가스 매니폴드 도관의 하부 말단으로부터의 하부 주입 포트들의 높이는 170 mm (일직선 거리임) 이다. 게다가, 주입 포트들은 90°의 각도로 설정된다. 도 11b는 도 11a에 예시된 실시형태에 따른 튜브형 매니폴드 도관의 하부 말단에서 취해진 튜브형 매니폴드 도관의 단면 상의 가스 농도들을 나타내는, 전산 유체 동역학 (CFD) 시뮬레이션을 사용하여 획득된 이미지를 도시한다. 도 11a 및 도 11b로부터 알 수 있듯이, 공정 가스의 가스 종의 농도는 튜브형 가스 매니폴드 도관의 일측에서 높고 튜브형 가스 매니폴드 도관의 타측에서 낮아서, 주입 포트들의 구성이 나선형 설계에서 혼합에 미미한 영향을 가진다는 것을 나타낸다. 도 11b의 분포도로부터 계산된 가스 혼합의 불-균일도는 5%이다. 비교적 양호한 균일도가 달성되는데, 주로 튜브형 가스 매니폴드 도관의 주입 포트들로부터 하부 말단 (반응기의 유입구) 까지의 거리가 길기 때문이다.11A shows on the walls of a gas mixing system having a helix-like design according to an embodiment of the present invention, wherein process gas is introduced from gas injection ports disposed in a lower axial position of a tubular gas manifold inlet; Shows an image obtained using computational fluid dynamics (CFD), representing gas concentrations. In this embodiment, the length from the lower injection ports to the lower end of the tubular gas manifold conduit is 315 mm along the helical axis of the tubular gas manifold conduit, and the height of the lower injection ports from the lower end of the tubular gas manifold conduit is 170 mm (which is a straight-line distance). In addition, the injection ports are set at an angle of 90°. 11B shows an image obtained using computational fluid dynamics (CFD) simulation, showing gas concentrations on a cross-section of the tubular manifold conduit taken at the lower end of the tubular manifold conduit according to the embodiment illustrated in FIG. 11A . 11A and 11B, the concentration of gas species in the process gas is high on one side of the tubular gas manifold conduit and low on the other side of the tubular gas manifold conduit, so that the configuration of the injection ports has negligible effect on mixing in the helical design. indicates that you have The non-uniformity of the gas mixture calculated from the distribution diagram of FIG. 11B is 5%. Relatively good uniformity is achieved, mainly due to the long distance from the injection ports of the tubular gas manifold conduit to the lower end (inlet of the reactor).
도 12a 및 도 12b는 본 발명의 실시형태에 따른 튜브형 매니폴드 도관의 하부 말단에서 취해진 도 3에 예시된 것과 유사한 튜브형 매니폴드 도관의 단면 상의 가스 농도들을 나타내는, 전산 유체 동역학 (CFD) 시뮬레이션을 사용하여 획득된 이미지들을 도시하는데, 건조 가스 (둘레상 건조 가스) 가 튜브형 가스 매니폴드 도관의 축 방향에서 상부 주입 포트들로부터, 0.6 slm (도 8a 및 도 8b) 대신에, 0.24 slm (도 12a) 및 0.72 slm (도 12b) 으로 튜브형 가스 매니폴드 도관 안으로 배출된다는 것을 제외하면, 그 공정 조건들은 도 8a 및 도 8b에서 예시된 이미지들을 위해 사용된 것들과 동일하다. 다시 말하면, 상부 둘레상 건조 가스 흐름은 도 8b에 대한 것과 비교하면 도 12a의 경우 60%만큼 감소되는 반면, 상부 둘레상 건조 가스 흐름은 도 8b에 대한 것과 비교하면 도 12b의 경우 20%만큼 증가된다. 도 12a 및 도 12b로부터 알 수 있듯이, 상부 둘레상 건조 가스가 증가되는 경우, 공정 가스의 가스 종의 농도는 튜브형 가스 매니폴드 도관의 중앙에서 높고 그 둘레를 따라 낮은 반면, 상부 둘레상 건조 가스가 감소되는 경우, 공정 가스의 가스 종의 농도의 분포는 거의 역전되며, 즉, 공정 가스의 가스 종의 농도는 튜브형 가스 매니폴드 도관의 중앙에서 낮고 그 둘레를 따라 특히 상부 주입 포트들의 로케이션들에 대응하는 5 개의 스폿들에서 높다. 도 8b의 3.5%와 비교하면, 도 12a의 분포도로부터 계산된 가스 혼합의 불-균일도는 9.1%이고, 도 12b의 그것은 10.9%이다. 상부 둘레상 건조 가스 흐름을 조절함으로써, 가스들의 혼합은 효과적으로 개선될 수 있다.12A and 12B use computational fluid dynamics (CFD) simulations showing gas concentrations on a cross section of a tubular manifold conduit similar to that illustrated in FIG. 3 taken at the lower end of the tubular manifold conduit in accordance with an embodiment of the present invention; In the axial direction of the tubular gas manifold conduit, dry gas (circumferential dry gas) flows from the upper injection ports, instead of 0.6 slm ( FIGS. 8A and 8B ), at 0.24 slm ( FIG. 12A ). and 0.72 slm ( FIG. 12B ) into the tubular gas manifold conduit, the process conditions are the same as those used for the images illustrated in FIGS. 8A and 8B . In other words, the dry gas flow over the upper perimeter decreases by 60% for FIG. 12A compared to that for FIG. 8B, while the dry gas flow over the upper perimeter increases by 20% for FIG. 12B as compared to that for FIG. 8B. do. 12A and 12B, when the dry gas on the upper perimeter is increased, the concentration of gas species in the process gas is high in the center of the tubular gas manifold conduit and low along the perimeter, while the dry gas on the upper perimeter is increased. When decreased, the distribution of the concentration of gas species in the process gas is almost reversed, ie, the concentration of gas species in the process gas is low in the center of the tubular gas manifold conduit and corresponds particularly to the locations of the upper injection ports along its perimeter. high in 5 spots that do. Compared with 3.5% in FIG. 8B, the non-uniformity of the gas mixture calculated from the distribution diagram in FIG. 12A is 9.1%, and that in FIG. 12B is 10.9%. By adjusting the dry gas flow over the upper perimeter, the mixing of gases can be effectively improved.
도 13은 본 발명의 실시형태에 따른 튜브형 매니폴드 도관의 하부 말단에서 취해진 도 3에 예시된 것과 유사한 튜브형 매니폴드 도관의 단면 상의 가스 농도들을 나타내는, 전산 유체 동역학 (CFD) 시뮬레이션을 사용하여 획득된 이미지들을 도시하는데, 건조 가스 (둘레상 건조 가스) 가 20°의 각도에서 하부 주입 포트들로부터, 0.39 slm (도 8a 및 도 8b) 대신에, 0.54 slm으로 튜브형 가스 매니폴드 도관 안으로 배출된다는 것을 제외하면, 그 공정 조건들은 도 8a 및 도 8b에서 예시된 이미지들을 위해 사용된 것들과 동일하다. 다시 말하면, 하부 둘레상 건조 가스 흐름은 도 8b의 그것과 비교하면 도 13의 경우 약 40%만큼 증가된다. 도 13으로부터 알 수 있듯이, 하부 둘레상 건조 가스가 증가되는 경우, 공정 가스의 가스 종의 농도의 분포는 도 8b에서의 그것과 유사하지만, 그 분포는 주입 포트들의 포지션들에 의해 더 많이 영향을 받는다 (높은 농도의 5 개의 스폿들이 있음). 도 8b의 3.5%와 비교하면, 도 13의 분포도로부터 계산된 가스 혼합의 불-균일도는 4.6%이다. 하부 둘레상 건조 가스 흐름을 조절함으로써, 가스들의 혼합은 개선될 수 있다.13 is obtained using computational fluid dynamics (CFD) simulations showing gas concentrations on a cross-section of a tubular manifold conduit similar to that illustrated in FIG. 3 taken at the lower end of the tubular manifold conduit in accordance with an embodiment of the present invention; The images are shown, except that dry gas (circumferential dry gas) is discharged from the lower injection ports at an angle of 20° into the tubular gas manifold conduit at 0.54 slm instead of 0.39 slm ( FIGS. 8A and 8B ). If so, the process conditions are the same as those used for the images illustrated in FIGS. 8A and 8B . In other words, the dry gas flow over the lower perimeter is increased by about 40% for FIG. 13 compared to that of FIG. 8B . As can be seen from FIG. 13 , when the dry gas on the lower perimeter is increased, the distribution of the concentration of gas species in the process gas is similar to that in FIG. 8B , but the distribution is more affected by the positions of the injection ports. Receive (there are 5 spots of high concentration). Compared with 3.5% in FIG. 8B, the non-uniformity of the gas mixture calculated from the distribution diagram in FIG. 13 is 4.6%. By adjusting the dry gas flow over the lower perimeter, the mixing of gases can be improved.
본원에서 개시된 튜브형 가스 매니폴드 도관은 반응 챔버 안으로의 가스들의 진입 전의 가스 종들의 혼합에 대단히 효과적이다. 가스들의 혼합은 샤워헤드 형 반응기에서 개선되지 않는다. 도 14는 450-mm 단일 웨이퍼 프로세싱 반응기를 위한 기존의 샤워 헤드의 벽들 상의 가스 농도들을 나타내는 전산 유체 동역학 (CFD) 시뮬레이션을 사용하여 획득된 이미지를 도시한다. 도 14로부터 알 수 있듯이, 샤워헤드 (152) 에서, '좌측'의 가스는 "우측'의 가스와 만나지 않고, 그러므로 가스들이 샤워헤드 (152) 의 상류에서 혼합되지 않고 가스 주입구 포트 (151) 를 통해 샤워헤드 (152) 에 들어가면, 가스들의 농도의 불균일한 분포는 샤워헤드에서 유지될 수도 있다.The tubular gas manifold conduit disclosed herein is highly effective at mixing gas species prior to entry of the gases into the reaction chamber. The mixing of gases is not improved in showerhead type reactors. 14 shows an image obtained using computational fluid dynamics (CFD) simulations representing gas concentrations on the walls of a conventional shower head for a 450-mm single wafer processing reactor. As can be seen from FIG. 14 , in the
상기에서, 튜브형 가스 매니폴드 도관은 2 개의 축 방향 포지션들에 배치된 주입 포트들과, 상단에 배치된 상단 주입 포트를 갖는다. 그러나, 튜브형 가스 매니폴드 도관은 단일 축 방향 포지션에만 배치된 적어도 2 개의 주입 포트들과 상단에 배치된 상단 주입 포트를 가질 수 있어, 하나의 가스 종이 축 방향 포지션에서 주입 포트들을 통해 주입되는 반면 제 2 가스 종이 상단 주입 포트를 통해 주입된다. 게다가, 주입 포트들은 주입 포트들의 수를 증가시키는 경우 2 개를 초과하는 축 방향 포지션들에서 배치될 수 있다.In the above, the tubular gas manifold conduit has injection ports disposed at two axial positions and a top injection port disposed at the top. However, the tubular gas manifold conduit may have at least two injection ports disposed only in a single axial position and a top injection port disposed on top, such that one gas species is injected through the injection ports in the axial position while the second 2 gas paper is injected through the top injection port. Moreover, the injection ports may be disposed in more than two axial positions when increasing the number of injection ports.
도 1은 본 발명의 일 실시형태에 따른 가스 혼합 시스템을 도시하는 개략도이다. 가스 혼합 시스템 (1) 은 튜브형 매니폴드 도관 (9), 튜브형 가스 매니폴드 도관의 상부 부분에서 튜브형 가스 매니폴드 도관 (9) 에 연결된 주입 포트들 (2, 3, 4, 5, 6, 및 7), 및 상단 주입 포트 (8) 를 포함한다. 주입 포트들 (2 내지 7) 은 동일한 축 방향 포지션에서 (튜브형 가스 매니폴드 도관의 축에 대해) 약 45°의 각도로 튜브형 가스 매니폴드 도관 (9) 의 둘레를 따라 동일한 간격으로 배치된다. 튜브형 가스 매니폴드 도관 (9) 은 반응기의 가스 주입구 포트에 연결되도록 구성되는 하부 말단 (10) 을 갖는다. 상단 주입 포트 (8) 는 튜브형 가스 매니폴드 도관 (9) 의 축에 평행하게 배치된다.1 is a schematic diagram illustrating a gas mixing system according to an embodiment of the present invention. The
건조 가스가 상단 주입 포트 (8) 에 그리고 또한 주입 포트들 (2, 7, 및 6) 에 공급되는 반면 공정 가스가 주입 포트들 (3, 4, 및 5) 에 공급되며 건조 가스가 3 개의 인접한 주입 포트들을 통과하고 공정 가스가 3 개의 인접한 주입 포트들을 통과하는 경우, 전산 유체 동역학 (CFD) 시뮬레이션을 사용하여 획득된 분포도로부터 튜브형 가스 매니폴드 도관의 하부 말단에서 계산된 가스 혼합의 불-균일도는 27%이다. 그 반면, 건조 가스가 상단 주입 포트 (8) 에 그리고 또한 주입 포트들 (2, 6, 및 4) 에 공급되는 반면 공정 가스가 주입 포트들 (7, 5, 및 3) 에 공급되며 건조 가스 및 공정 가스가 튜브형 가스 매니폴드 도관의 둘레를 따라 번갈아 주입 포트들을 통과하는 경우, 전산 유체 동역학 (CFD) 시뮬레이션을 사용하여 획득된 분포도로부터 튜브형 가스 매니폴드 도관의 하부 말단에서 계산된 가스 혼합의 불-균일도는 0.4%인데, 이는 건조 가스 및 공정 가스가 튜브형 가스 매니폴드 도관의 일측으로부터 공급되는 경우에 비해 현저히 낮다.Drying gas is supplied to the
도 2는 본 발명의 다른 실시형태에 따른 가스 혼합 시스템을 도시하는 개략도이다. 가스 혼합 시스템 (21) 은 튜브형 매니폴드 도관 (26) 과, 튜브형 가스 매니폴드 도관의 상부 부분에서 튜브형 가스 매니폴드 도관 (26) 에 연결된 주입 포트들 (22, 23, 24, 및 25) 을 포함한다. 주입 포트들 (22 내지 25) 은 동일한 축 방향 포지션에서 (튜브형 가스 매니폴드 도관의 축에 대해) 약 90°의 각도로 튜브형 가스 매니폴드 도관 (26) 의 둘레를 따라 동일한 간격으로 배치된다. 상단 주입 포트는 제공되지 않는다. 튜브형 가스 매니폴드 도관 (26) 은 반응기의 가스 주입구 포트에 연결되도록 구성되는 하부 말단을 갖는다.2 is a schematic diagram illustrating a gas mixing system according to another embodiment of the present invention. The
건조 가스가 주입 포트들 (25 및 24) 에 공급되는 반면 공정 가스가 주입 포트들 (23 및 22) 에 공급되며 건조 가스가 2 개의 인접한 주입 포트들을 통과하고 공정 가스가 2 개의 인접한 주입 포트들을 통과하는 경우, 전산 유체 동역학 (CFD) 시뮬레이션을 사용하여 획득된 분포도로부터 튜브형 가스 매니폴드 도관의 하부 말단에서 계산된 가스 혼합의 불-균일도는 6.2%이다. 그 반면, 건조 가스가 상단 주입 포트들 (24 및 22) 에 공급되는 반면 공정 가스가 주입 포트들 (25 및 23) 에 공급되며 건조 가스 및 공정 가스가 튜브형 가스 매니폴드 도관의 둘레를 따라 번갈아 주입 포트들을 통과하는 경우, 전산 유체 동역학 (CFD) 시뮬레이션을 사용하여 획득된 분포도로부터 튜브형 가스 매니폴드 도관의 하부 말단에서 계산된 가스 혼합의 불-균일도는 0.9%인데, 이는 건조 가스 및 공정 가스가 튜브형 가스 매니폴드 도관의 일측으로부터 공급되는 경우에 비해 현저히 낮다.Drying gas is supplied to
본원에서 개시된 가스 혼합 시스템은 반응 챔버 안으로의 가스들의 진입 전에 둘 이상의 가스들을 혼합하는 것을 필요로 하는 임의의 적합한 반응 챔버에 연결될 수 있다. 도 16은 일 실시형태에 따른 튜브형 가스 매니폴드 도관이 장치의 공정 챔버의 중앙 가스 포트에 부착되도록 되는 플라즈마-지원형 증착 장치의 개략도이다. 예를 들어, 이 샤워헤드 형 반응기는, 반응 챔버 (243) 의 내부 (251) 에서 서로 평행하고 마주하게 배치된 한 쌍의 전기 전도성 평판 전극들 (242, 244) (기판 (241) 이 하부 전극 (242) 의 상단에 배치됨) 을 구비한 반응 챔버 (243), 반응기 챔버 (243) 의 상단에 배치되어 튜브형 가스 매니폴드 도관을 수용하기 위한 가스 주입구 포트 (200), 및 반응기 챔버 (243) 의 내부 (251) 로부터 가스를 배출하기 위한 배기부 (246) 를 포함한다. 그 장치는 HRF 전력 및 LRF 전력을 상부 전극 (244) 에 각각 인가하기 위한 RF 전력 소스들 (245, 290) 을 더 포함한다. 상부 전극 (242) 은 전기적으로 접지 (252) 된다. 반응 챔버 (243) 의 내부 (251) 로 봉지 가스를 도입하기 위한 봉지 가스 흐름 제어기 (264) 가 또한 반응 챔버 (243) 에 제공된다. 상부 전극 (244) 은 샤워헤드로서도 역할을 한다. 본원에서 개시된 가스 혼합 시스템의 튜브형 가스 매니폴드 도관은 가스 주입구 포트 (200) 상에 탑재되고 상부 전극 (244) 에 연결되고, 균일하게 혼합된 공정 가스들이 튜브형 가스 매니폴드 주입구로부터 반응 챔버 (243) 안으로 도입된다.The gas mixing system disclosed herein may be coupled to any suitable reaction chamber requiring mixing of two or more gases prior to entry of the gases into the reaction chamber. 16 is a schematic diagram of a plasma-assisted deposition apparatus in which a tubular gas manifold conduit is attached to a central gas port of a process chamber of the apparatus according to one embodiment; For example, in this showerhead-type reactor, a pair of electrically
도 17은 일 실시형태에 따른 튜브형 가스 매니폴드 도관이 장치의 공정 챔버의 측면 가스 포트에 부착되도록 되는 UV-지원형 증착 장치의 개략도이다. 예를 들어, 이 크로스 플로 (cross-flow) 형 반응기는 공정 챔버 (179), 반응 챔버 (179) 의 하나의 측방향 측면에 제공된 주입기 플랜지 (171), 반응 챔버 (179) 의 다른 측방향 측면에 제공된 배기 플랜지 (172), 기판 (176) 이 배치되는 발열체 (susceptor; 177), 및 UV 광을 방출하는 하부 램프 어레이 (173), UV 광을 방출하는 상부 램프 어레이 (174), 내부 (180) 를 규정하기 위해 발열체 (177) 및 상부 램프 어레이 (174) 사이에 배치된 조사 (irradiation) 윈도우 그라스 (175), 및 본원에서 개시된 가스 혼합 시스템의 튜브형 가스 매니폴드 도관을 탑재하기 위해 주입기 플랜지 (171) 에 제공된 가스 주입구 포트 (178) 를 포함한다. 공정 가스들은 가스 혼합 시스템으로부터 주입기 플랜지 (171) 를 통해 공정 챔버 (179) 의 내부 (180) 안으로 도입되고 공정 챔버의 측 방향 (lateral direction) 으로 흐르고 배기 플랜지 (172) 를 통해 배출된다. 기판 (176) 은 하부 램프 어레이 (173) 및 상부 램프 어레이 (174) 로부터 방출된 UV 광으로 조사된다.17 is a schematic diagram of a UV-assisted deposition apparatus in which a tubular gas manifold conduit is attached to a side gas port of a process chamber of the apparatus according to one embodiment; For example, this cross-flow type reactor has a
상기에서, 그 장치는 본원의 다른 곳에서 설명되는 증착 및 반응기 세정 공정들이 수행되게 하도록 프로그램되거나 또는 그렇지 않으면 구성된 하나 이상의 제어기(들) (미도시) 를 구비한다는 것을 숙련자가 이해할 것이다. 그 제어기(들)는 숙련자에 의해 이해될 바와 같이, 반응기의 다양한 전력 소스들, 가열 시스템들, 펌프들, 로보틱스 및 가스 흐름 제어기들 또는 밸브들과 통신된다.From the above, it will be appreciated by those skilled in the art that the apparatus includes one or more controller(s) (not shown) programmed or otherwise configured to cause the deposition and reactor cleaning processes described elsewhere herein to be performed. The controller(s) are in communication with the reactor's various power sources, heating systems, pumps, robotics and gas flow controllers or valves, as will be understood by the skilled artisan.
수많은 및 다양한 수정들이 본 발명의 정신으로부터 벗어남 없이 만들어질 수 있다는 것은 당업자들에 의해 이해될 것이다. 그러므로, 본 발명의 형태들이 단지 예시적인 것이고 본 발명의 범위를 제한하고자 의도하지 않음이 이해되어야 한다.It will be understood by those skilled in the art that numerous and various modifications may be made without departing from the spirit of the present invention. Therefore, it should be understood that the forms of the present invention are illustrative only and are not intended to limit the scope of the present invention.
Claims (20)
튜브형 가스 매니폴드 도관으로서, 상기 튜브형 가스 매니폴드 도관에서 혼합된 가스를 상기 웨이퍼 프로세싱 반응기로 공급하기 위해 상기 웨이퍼 프로세싱 반응기의 가스 주입구 포트에 연결되도록 된, 상기 튜브형 가스 매니폴드 도관; 및
제 1 가스를 상기 튜브형 가스 매니폴드 도관 안으로 공급하기 위한 제 1 공급부와 제 2 가스를 상기 튜브형 가스 매니폴드 도관 안으로 공급하기 위한 제 2 공급부를 포함하는 가스 공급부들로서, 각각의 공급부는 상기 튜브형 가스 매니폴드 도관의 제 1 축 방향 포지션에서 상기 튜브형 가스 매니폴드 도관에 연결된 둘 이상의 주입 포트들을 갖는, 상기 가스 공급부들을 포함하며,
상기 가스 공급부들의 각각의 가스 공급부의 상기 주입 포트들은 상기 제 1 축 방향 포지션에서 상기 튜브형 가스 매니폴드 도관의 둘레를 따라 균일하게 분포되고,
상기 제 1 공급부는 상기 제 1 가스의 유입을 위한 유입구와 상기 제 1 공급부의 상기 둘 이상의 주입 포트들에 각각 연결된 상기 제 1 가스의 유출을 위한 다수의 유출구들을 갖는 C-자형 공통 채널을 더 구비하고,
상기 제 2 공급부는 상기 제 2 가스의 유입을 위한 유입구와 상기 제 2 공급부의 상기 둘 이상의 주입 포트들에 각각 연결된 상기 제 2 가스의 유출을 위한 다수의 유출구들을 갖는 C-자형 공통 채널을 더 구비하며,
상기 제 1 가스의 유출을 위한 다수의 유출구 및 상기 제 2 가스의 유출을 위한 다수의 유출구는 상기 튜브형 가스 매니폴드 도관의 축에 대해 수직을 이루는 각도를 밑도는 소정의 각도로 상기 튜브형 가스 매니폴드 도관에 연결되는, 웨이퍼 프로세싱 반응기를 위한 가스 주입구 시스템.A gas inlet system for a wafer processing reactor comprising:
a tubular gas manifold conduit adapted to be connected to a gas inlet port of the wafer processing reactor for supplying gas mixed in the tubular gas manifold conduit to the wafer processing reactor; and
gas supplies comprising a first supply for supplying a first gas into the tubular gas manifold conduit and a second supply for supplying a second gas into the tubular gas manifold conduit, each supply comprising the tubular gas manifold conduit the gas supplies having two or more injection ports connected to the tubular gas manifold conduit in a first axial position of the fold conduit;
the injection ports of each of the gas supplies are uniformly distributed along the perimeter of the tubular gas manifold conduit in the first axial position;
The first supply portion further comprises a C-shaped common channel having an inlet for the inlet of the first gas and a plurality of outlets for the outlet of the first gas respectively connected to the two or more injection ports of the first supply. do,
The second supply portion further comprises a C-shaped common channel having an inlet for the inlet of the second gas and a plurality of outlets for the outlet of the second gas respectively connected to the two or more injection ports of the second supply. and
The plurality of outlets for the outflow of the first gas and the plurality of outlets for the outflow of the second gas are at an angle less than an angle perpendicular to the axis of the tubular gas manifold conduit in the tubular gas manifold conduit. connected to a gas inlet system for a wafer processing reactor.
상기 제 1 공급부의 상기 주입 포트들의 수와 상기 제 2 공급부의 상기 주입 포트들의 수는 동일하고, 상기 제 1 공급부의 상기 주입 포트들과 상기 제 2 공급부의 상기 주입 포트들은 상기 튜브형 가스 매니폴드 도관의 상기 둘레를 따라 번갈아 배치되는, 웨이퍼 프로세싱 반응기를 위한 가스 주입구 시스템.The method of claim 1,
The number of injection ports of the first supply and the number of injection ports of the second supply are equal, the injection ports of the first supply and the injection ports of the second supply are the tubular gas manifold conduits alternately disposed along the perimeter of a gas inlet system for a wafer processing reactor.
각각의 공급부의 상기 주입 포트들은 상기 튜브형 가스 매니폴드 도관의 축에 대해 0° 내지 45°의 각도에서 상기 튜브형 가스 매니폴드 도관에 연결되는, 웨이퍼 프로세싱 반응기를 위한 가스 주입구 시스템.The method of claim 1,
wherein the injection ports of each supply are connected to the tubular gas manifold conduit at an angle of 0° to 45° with respect to the axis of the tubular gas manifold conduit.
상기 튜브형 가스 매니폴드 도관은 상기 제 1 축 방향 포지션의 하류에서의 제 1 지름, 및 상기 제 1 축 방향 포지션에서의 제 2 지름을 갖고,
상기 제 2 지름은 상기 제 1 지름보다 작은, 웨이퍼 프로세싱 반응기를 위한 가스 주입구 시스템.The method of claim 1,
wherein the tubular gas manifold conduit has a first diameter downstream of the first axial position and a second diameter at the first axial position;
and the second diameter is less than the first diameter.
상기 제 1 공급부는 반응 가스를 제공하는 가스 소스에 연결되고, 상기 제 2 공급부는 불활성 가스를 제공하는 가스 소스에 연결되는, 웨이퍼 프로세싱 반응기를 위한 가스 주입구 시스템.The method of claim 1,
wherein the first supply is connected to a gas source that provides a reactant gas and the second supply is connected to a gas source that provides an inert gas.
상기 가스 공급부들은 하부 가스 공급부들로서 역할을 하고,
상기 가스 주입구 시스템은, 상부 가스 공급부들을 더 포함하며,
상기 상부 가스 공급부들은 제 3 가스를 상기 튜브형 가스 매니폴드 도관 안으로 공급하기 위한 제 3 공급부 및 제 4 가스를 상기 튜브형 가스 매니폴드 도관 안으로 공급하기 위한 제 4 공급부를 포함하며,
상기 상부 가스 공급부들의 각각은 상기 튜브형 가스 매니폴드 도관의 제 2 축 방향 포지션에서 상기 튜브형 가스 매니폴드 도관에 연결된 둘 이상의 주입 포트들을 가지며,
제 2 축 방향 포지션은 상기 제 1 축 방향 포지션의 상류에 위치되는, 웨이퍼 프로세싱 반응기를 위한 가스 주입구 시스템.The method of claim 1,
the gas supplies serve as lower gas supplies,
The gas inlet system further includes upper gas supply parts,
the upper gas supplies include a third supply for supplying a third gas into the tubular gas manifold conduit and a fourth supply for supplying a fourth gas into the tubular gas manifold conduit;
each of the upper gas supplies having two or more injection ports connected to the tubular gas manifold conduit in a second axial position of the tubular gas manifold conduit;
and the second axial position is located upstream of the first axial position.
상기 튜브형 가스 매니폴드 도관은 상기 제 1 축 방향 포지션의 하류에서의 제 1 지름, 상기 제 1 축 방향 포지션에서의 제 2 지름, 및 상기 제 2 축 방향 포지션에서의 제 3 지름을 갖고,
상기 제 3 지름은 상기 제 1 지름보다 작은 상기 제 2 지름보다 작은, 웨이퍼 프로세싱 반응기를 위한 가스 주입구 시스템.7. The method of claim 6,
the tubular gas manifold conduit has a first diameter downstream of the first axial position, a second diameter at the first axial position, and a third diameter at the second axial position;
and the third diameter is less than the second diameter, which is smaller than the first diameter.
상기 제 3 공급부는 상기 제 3 가스의 유입을 위한 유입구와 상기 제 3 공급부의 상기 둘 이상의 주입 포트들에 각각 연결된 상기 제 3 가스의 유출을 위한 다수의 유출구들을 갖는 C-자형 공통 채널을 더 구비하고,
상기 제 4 공급부는 상기 제 4 가스의 유입을 위한 유입구와 상기 제 4 공급부의 상기 둘 이상의 주입 포트들에 각각 연결된 상기 제 4 가스의 유출을 위한 다수의 유출구들을 갖는 C-자형 공통 채널을 더 구비하는, 웨이퍼 프로세싱 반응기를 위한 가스 주입구 시스템.7. The method of claim 6,
The third supply portion further comprises a C-shaped common channel having an inlet for the inlet of the third gas and a plurality of outlets for the outlet of the third gas respectively connected to the two or more injection ports of the third supply. do,
The fourth supply portion further comprises a C-shaped common channel having an inlet for the inlet of the fourth gas and a plurality of outlets for the outlet of the fourth gas respectively connected to the two or more injection ports of the fourth supply. A gas inlet system for a wafer processing reactor.
상기 제 3 및 제 4 공급부들 각각의 상기 주입 포트들은 상기 튜브형 가스 매니폴드 도관의 축에 대해 0° 내지 45°의 각도에서 상기 튜브형 가스 매니폴드 도관에 연결되는, 웨이퍼 프로세싱 반응기를 위한 가스 주입구 시스템.7. The method of claim 6,
wherein the injection ports of each of the third and fourth supplies are connected to the tubular gas manifold conduit at an angle of 0° to 45° with respect to the axis of the tubular gas manifold conduit. .
상기 제 3 및 제 4 공급부들 각각의 상기 주입 포트들은 상기 튜브형 가스 매니폴드 도관의 축에 평행하게 상기 튜브형 가스 매니폴드 도관에 연결되고, 상기 제 1 및 제 2 공급부들 각각의 상기 주입 포트들은 상기 튜브형 가스 매니폴드 도관의 축에 대해 15° 내지 25°의 각도에서 상기 튜브형 가스 매니폴드 도관에 연결되는, 웨이퍼 프로세싱 반응기를 위한 가스 주입구 시스템.10. The method of claim 9,
The injection ports of each of the third and fourth feeds are connected to the tubular gas manifold conduit parallel to the axis of the tubular gas manifold conduit, and the injection ports of each of the first and second feeds are connected to the A gas inlet system for a wafer processing reactor connected to the tubular gas manifold conduit at an angle of 15° to 25° relative to the axis of the tubular gas manifold conduit.
보조 가스를 상기 튜브형 가스 매니폴드 도관 안으로 공급하기 위한 상단 공급부를 더 포함하며, 상기 상단 공급부는 상기 튜브형 가스 매니폴드 도관의 상류 말단에서 상기 튜브형 가스 매니폴드 도관에 연결된 주입 포트를 갖는, 웨이퍼 프로세싱 반응기를 위한 가스 주입구 시스템.The method of claim 1,
and a top supply for supplying auxiliary gas into the tubular gas manifold conduit, the top supply having an injection port connected to the tubular gas manifold conduit at an upstream end of the tubular gas manifold conduit. gas inlet system for
상단 공급부가 건조 가스를 제공하는 가스 소스에 연결되는, 웨이퍼 프로세싱 반응기를 위한 가스 주입구 시스템.12. The method of claim 11,
A gas inlet system for a wafer processing reactor, wherein the top supply is connected to a gas source providing drying gas.
상기 웨이퍼 프로세싱 반응기는 원자 층 증착 (ALD) 을 위한 반응기 또는 화학 기상 증착 (CVD) 을 위한 반응기이고, 상기 튜브형 가스 매니폴드 도관은 ALD 또는 CVD를 위해 상기 반응기의 가스 주입구 포트에 연결되는, 웨이퍼 프로세싱 반응기를 위한 가스 주입구 시스템.The method of claim 1,
wherein the wafer processing reactor is a reactor for atomic layer deposition (ALD) or a reactor for chemical vapor deposition (CVD), and the tubular gas manifold conduit is connected to a gas inlet port of the reactor for ALD or CVD. Gas inlet system for the reactor.
상기 튜브형 가스 매니폴드 도관은 상기 가스 주입구 포트를 상기 웨이퍼 프로세싱 반응기의 웨이퍼 수용 영역 위쪽에서 중앙에 배치하도록 되는, 웨이퍼 프로세싱 반응기를 위한 가스 주입구 시스템.14. The method of claim 13,
and the tubular gas manifold conduit is adapted to centrally position the gas inlet port above a wafer receiving area of the wafer processing reactor.
제 1 가스를 제 1 공급부의 주입 포트들을 통해 튜브형 가스 매니폴드 도관으로 공급하는 한편, 제 2 가스를 제 2 공급부의 상기 주입 포트들을 통해 상기 튜브형 가스 매니폴드 도관으로 공급하며, 이로 인해 상기 제 1 가스 및 상기 제 2 가스가 상기 튜브형 가스 매니폴드 도관 내부에서 혼합되는 단계; 및
상기 웨이퍼 프로세싱 반응기에 로드된 기판 상에 필름을 증착하기 위해 혼합된 상기 가스를 상기 가스 주입구 시스템을 통해 상기 웨이퍼 프로세싱 반응기로 공급하는 단계를 포함하는, 혼합된 가스를 웨이퍼 프로세싱 반응기로 공급하는 방법.A method of supplying a mixed gas to a wafer processing reactor using the gas inlet system of claim 1, comprising:
A first gas is supplied to the tubular gas manifold conduit through the injection ports of a first supply, while a second gas is supplied to the tubular gas manifold conduit through the injection ports of a second supply, whereby the first mixing gas and the second gas within the tubular gas manifold conduit; and
supplying the mixed gas to the wafer processing reactor through the gas inlet system to deposit a film on a substrate loaded into the wafer processing reactor.
상기 튜브형 가스 매니폴드 도관은 상기 튜브형 가스 매니폴드 도관의 상류 말단에서 상기 튜브형 가스 매니폴드 도관에 연결된 주입 포트를 갖는 상단 공급부를 더 포함하며,
상기 방법은, 불활성 가스를 상기 상단 공급부의 상기 주입 포트를 통해 상기 튜브형 가스 매니폴드 도관으로 공급하면서 상기 튜브형 가스 매니폴드 도관에 상기 제 1 및 제 2 가스들을 공급하는 단계를 더 포함하며, 상기 제 1 및 제 2 가스들 중 하나는 공정 가스인, 혼합된 가스를 웨이퍼 프로세싱 반응기로 공급하는 방법.16. The method of claim 15,
the tubular gas manifold conduit further comprises a top feed having an inlet port connected to the tubular gas manifold conduit at an upstream end of the tubular gas manifold conduit;
The method further comprises supplying the first and second gases to the tubular gas manifold conduit while supplying an inert gas to the tubular gas manifold conduit through the injection port of the top supply, wherein the first and second gases are supplied to the tubular gas manifold conduit. A method of supplying a mixed gas to a wafer processing reactor, wherein one of the first and second gases is a process gas.
상기 필름은 제 1 조건들 하에서 증착되고,
상기 방법은, 상기 제 1 조건들 하에서 증착된 상기 필름의 균일도에 비해 필름의 개선된 균일도를 갖는 필름을 기판 상에 증착하기 위해서, 상기 상단 공급부로부터의 상기 불활성 가스의 흐름 율을 변경하면서 상기 불활성 가스의 상기 흐름 율을 제외한 상기 제 1 조건들을 유지하는 단계를 더 포함하는, 혼합된 가스를 웨이퍼 프로세싱 반응기로 공급하는 방법.17. The method of claim 16,
the film is deposited under first conditions;
The method comprises changing the flow rate of the inert gas from the top supply to deposit a film on a substrate having an improved uniformity of a film compared to that of the film deposited under the first conditions. and maintaining the first conditions except for the flow rate of gas.
상기 가스 공급부들은 하부 가스 공급부들로서 역할을 하고,
상기 가스 주입구 시스템은 제 3 공급부 및 제 4 공급부를 포함하는 상부 가스 공급부들을 더 포함하며,
상기 상부 가스 공급부들의 각각은 상기 튜브형 가스 매니폴드 도관의 제 2 축 방향 포지션에서 상기 튜브형 가스 매니폴드 도관에 연결된 둘 이상의 주입 포트들을 갖고,
제 2 축 방향 포지션은 상기 제 1 축 방향 포지션의 상류에 위치되며,
상기 방법은, 제 3 가스 및 제 4 가스를 상기 제 3 공급부 및 상기 제 4 공급부의 상기 주입 포트들을 통해 각각 상기 튜브형 가스 매니폴드 도관으로 공급하면서 상기 튜브형 가스 매니폴드 도관으로 상기 제 1 및 제 2 가스들을 공급하는 단계를 더 포함하며, 상기 제 1 및 제 2 가스들 중 하나는 공정 가스인, 혼합된 가스를 웨이퍼 프로세싱 반응기로 공급하는 방법.16. The method of claim 15,
the gas supplies serve as lower gas supplies,
The gas inlet system further includes upper gas supply parts including a third supply part and a fourth supply part,
each of the upper gas supplies having two or more injection ports connected to the tubular gas manifold conduit in a second axial position of the tubular gas manifold conduit;
the second axial position is located upstream of the first axial position;
The method comprises: supplying a third gas and a fourth gas to the tubular gas manifold conduit through the injection ports of the third supply part and the fourth supply part to the tubular gas manifold conduit, respectively, while supplying the first and second gas to the tubular gas manifold conduit The method further comprising supplying gases, wherein one of the first and second gases is a process gas.
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US10683571B2 (en) | 2020-06-16 |
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