JP3610900B2 - Heat treatment equipment - Google Patents

Heat treatment equipment Download PDF

Info

Publication number
JP3610900B2
JP3610900B2 JP2000364959A JP2000364959A JP3610900B2 JP 3610900 B2 JP3610900 B2 JP 3610900B2 JP 2000364959 A JP2000364959 A JP 2000364959A JP 2000364959 A JP2000364959 A JP 2000364959A JP 3610900 B2 JP3610900 B2 JP 3610900B2
Authority
JP
Japan
Prior art keywords
box
gas
heat treatment
space
main body
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2000364959A
Other languages
Japanese (ja)
Other versions
JP2002170781A (en
Inventor
康夫 八木
勲 萩野
健一 佐藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to JP2000364959A priority Critical patent/JP3610900B2/en
Publication of JP2002170781A publication Critical patent/JP2002170781A/en
Application granted granted Critical
Publication of JP3610900B2 publication Critical patent/JP3610900B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Landscapes

  • Ventilation (AREA)
  • Chemical Vapour Deposition (AREA)

Description

【０００１】
【発明の属する技術分野】
本発明は、半導体ウエハなどの被処理体に成膜処理などの熱処理を施す熱処理装置に関する。
【０００２】
【従来の技術】
一般に、半導体集積回路を形成するには、半導体ウエハ等の被処理体に対して、成膜処理、酸化拡散処理、アニール処理、エッチング処理等の各種の処理を繰り返し行なうが、このような熱処理を行なう熱処理装置の内、一度に多数枚の半導体ウエハに対して処理を行なうことができる、いわゆるバッチ式の縦型の熱処理装置が多く用いられている。
図８は真空排気系を有しない従来のバッチ式の縦型熱処理装置の一例を示す概略斜視図、図９は図８に示す装置の平面図、図１０は真空排気系を有する従来のバッチ式の縦型熱処理装置の一例を示す概略斜視図、図１１は図１０に示す装置の平面図である。
【０００３】
この熱処理装置２は、装置本体４と、ガスボックス６と、電気系ボックス８とにより主に構成される。上記装置本体４は全体が筐体１２に囲まれており、この中には周囲に加熱ヒータを配置して、内部で一度に多数枚の半導体ウエハに対して所定の熱処理を施す縦型の処理容器１４が設けられると共に、その前面側には、半導体ウエハを収容したキャリア（図示せず）を搬入・搬出させる搬出入ポート１６が形成されている。この搬出入ポート１６側が操作面側となり、その反対側が裏面側となる。更に、図示されていないが、この筐体１２内には、カセットを載置するカセットストッカや、ウエハ搬送機、ボートエレベータ等の種々の機構及び部材が設けられている。
【０００４】
上記ガスボックス６と上記電気系ボックス８とは、ガスボックス６を上段にして上下に積み重ねられている。そして、このガスボックス６と電気系ボックス８は、装置本体４の裏面側にメンテナンス空間１８を隔てて設けられており、上記ガスボックス６の内部には拡散処理等の熱処理に必要な処理ガスを清浄化するフィルタや開閉弁やマスフローコントローラのような流量制御器等を内蔵するガス制御ユニット２０が収容されている。このガスボックス６の全体はガスボックス筐体２２により覆われて、その前面にはガス操作表示パネル２２Ａが設けられる。上記ガスボックス６には、複数、図示例では３本のガス供給ライン２４Ａ、２４Ｂ、２４Ｃが接続されており、これらの各ガス供給ライン２４Ａ〜２４Ｃは下方へ引き回されて、必要なガスを床下に配設されている集中ガス源より導入するようになっている。また、このガスボックス６からはボックス排気ライン２６が下方に向けて延びており、床下に設けた排気設備によりガスボックス６内を吸引排気するようになっている。また、上記電気系ボックス８は、必要な電気系部品を収容したものである。尚、電源トランス等は、これが設置されるクリーンルームの床下などに設置される。
【０００５】
そして、装置本体４とガスボックス６との間は、配線用ダクト２８で連結されており、この下部に種々のガス配管３０を通して、上記ガスボックス６から処理容器１４内側へ各種の処理ガスを供給し得るようになっている。このダクト２８内には、必要な配線ケーブルが収容される。そして、装置本体４側のガス取り込み部には上記ガス配管３０に接続されるバルブボックス３２が設けられており、このバルブボックス３２内に最終段の開閉弁やフィルタを内蔵させて、配管の引き回しに起因する流量制御の精度劣化等を防止している。
上記熱処理装置２は、大気圧で、或いは大気圧近傍で拡散処理やアニール処理を行う装置であるが、ＣＶＤ成膜処理等を行うには大がかりな真空排気系が必要であり、この場合には、図１０及び図１１に示すように、上記ガスボックス６と電気系ボックス８の一体化物に背中合わせとなるように排気ボックス３４を併設している。尚、この場合、ガスボックス６と電気系ボックス８は図８及び図９に示す場合とは反対側に向けて、操作を行うようになっている。この排気ボックス３４内には、排気管３８に介設して開閉弁、圧力制御弁、トラップ機構等（図示せず）が設けられるが、この排気ボックス３４の排気管３８と上記装置本体４の処理容器１４との間は大口径の真空排気管３６により接続され、この排気管３８を床下に設けた真空ポンプ（図示せず）に接続して処理容器１４内を真空引きするようになっている。
【０００６】
【発明が解決しようとする課題】
ところで、この種の熱処理装置が設置されるクリーンルームは、単位面積当たりの維持コストが非常に高いことから、装置自体の占有スペースを減少させることは勿論必要であるが、更に、この熱処理装置全体をメンテナンスするために確保すべきスペースを極力減少させることが求められている。
しかしながら、クリーンルームの多くは、装置の階下にガス供給ラインや排気ラインを設けているため、上記した従来の熱処理装置２にあっては、ガスボックス６と電気系ボックス８との一体化物と装置本体４との間にメンテナンス空間１８を設ける必要があるばかりか、その一体化物の裏面側には、ガス供給ライン２４Ａ〜２４Ｃやボックス排気ライン２６を配設するための配管スペース４０も必要となり、全体としての必要スペースが非常に大きくなってしまうという問題があった。また、図１０及び図１１に示す従来装置例の場合には、一体化物のガス操作パネル２２Ａ側に、上記配管スペース４０よりも面積の大きな、メンテナンス空間４２を設けなければならない、という問題があった。
【０００７】
特に、ウエハサイズが２０ｃｍ（８インチ）から３０ｃｍ（１２インチ）へ大きくなるに従って、装置自体も格段に大きくなり、上記した問題点の早期解決が望まれている。
本発明は、以上のような問題点に着目し、これを有効に解決すべく創案されたものである。本発明の目的は、装置の占有スペースのみならず、このメンテナンス空間も含めた必要なスペースを大幅に削減することが可能な熱処理装置を提供することにある。
【０００８】
【課題を解決するための手段】
請求項１に係る発明は、複数の被処理体に対して処理ガスにより所定の処理を施すための処理容器を収容する装置本体と、前記処理ガスの供給を制御するガス制御ユニットを収容するガスボックスと、電気部品を収容する電気系ボックスとを有する熱処理装置において、前記装置本体の裏面にメンテナンスドアを設け、前記ガスボックスと前記電気系ボックスとを、前記ガスボックスを下方にした状態でフレーム筐体で上下に接合して一体化物とすると共に、この一体化物の側面を前記装置本体の裏面に、前記メンテナンスドアを避けて連結するように構成したものである。
これにより、ガスボックスを電気系ボックスの下段に位置させ、しかも上記両ボックスの一体化物を装置本体の裏面側へ接合するようにしたので、従来必要とされた配管スペースが不要となり、また、一体化物も装置本体のメンテナンス空間の一部に配置されることになるので、装置占有スペースと装置のメンテナンス空間とを含む全体としての必要スペースを大幅に削減することが可能となる。
【０００９】
この場合、例えば請求項２に規定するように、前記ガスボックスのガス操作パネルと、前記電気系ボックスの電気操作パネルとは、前記メンテナンスドアの後方に位置するメンテナンス空間に臨ませて配置される。
また、例えば請求項３に規定するように、前記処理容器内の真空引きを制御するための排気ユニットを収容する排気ボックスを、前記メンテナンス空間を挟んで前記一体化物に対向させて前記装置本体の裏面に接合する。
これによれば、処理容器内の真空引きを行う排気ボックスも装置本体の裏面に直接接合しているので、全体としての必要スペースを一層削減することが可能となる。
【００１０】
この場合、例えば請求項４に規定するように、前記一体化物のメンテナンスを行う一体化物メンテナンス空間と、前記排気ボックスのメンテナンスを行う排気メンテナンス空間と、前記装置本体のメンテナンス空間とを共用する。
【００１１】
【発明の実施の形態】
以下に、本発明に係る熱処理装置の一実施例を添付図面に基づいて詳述する。
図１は本発明の熱処理装置の第１実施例の裏面側を示す斜視図、図２は図１に示す装置の平面図、図３は図１に示す装置の側面図、図４は本発明装置の第１実施例の必要スペースの削減効果を説明するための説明図である。尚、ここでは先に説明した従来装置と同一構成部分については同一符号を付して説明する。
この熱処理装置５０は、大気圧、或いは大気圧近傍で拡散処理等の熱処理を行う装置であり、後述するようにここでは真空排気系を設けていない。
【００１２】
まず、この熱処理装置５０は、装置本体４と、ガスボックス６と、電気系ボックス８とにより主に構成される。上記装置本体４は全体が筐体１２に囲まれており、この中には周囲に加熱ヒータを配置して、内部で一度に多数枚の半導体ウエハに対して熱拡散等の所定の熱処理を施す縦型の処理容器１４が設けられると共に、その前面側には、半導体ウエハを収容したキャリア（図示せず）を搬入・搬出させる搬出入ポート１６及び本体操作パネル１７（図２参照）が形成されている。この搬出入ポート１６側が操作面側となり、その反対側が裏面側となる。
更に、図示されていないが、この筐体１２内には、カセットを載置するカセットストッカや、ウエハ搬送機、ボートエレベータ等の種々の機構及び部材が設けられている。また、上記筐体１２の裏面側には上記処理容器１４を搬出入したり、この装置本体４内をメンテナンスする際に、開閉されるメンテナンスドア５２が開閉可能に設けられる。
【００１３】
上記ガスボックス６と上記電気系ボックス８とは、ガスボックス６を下段にして上下に積み重ねられている。そして、このガスボックス６と電気系ボックス８は、フレームを用いて縦長の直方体状に組み立てられたフレーム筐体５４により上下に接合されており、一体化物５６として構成されている。そして、この一体化物５６の幅の狭い側面を、上記装置本体４の裏面の一側に連結するように接合させている。この場合、勿論のこととして、上記メンテナンスドア５２を避けるように上記一体化物５６を接合している。
【００１４】
上記ガスボックス６の内部には拡散処理等の熱処理に必要な処理ガスを清浄化するフィルタや開閉弁やマスフローコントローラのような流量制御器等を内蔵するガス制御ユニット（図示せず）が収容されている。このガスボックス６の全体はプレート５８により覆われて、その前面の一部にはガス操作表示パネル２２Ａが設けられ、また、前面のパネル５８も開閉可能になされている。そして、このガスボックス６の上部には複数、図示例では３つのガス出口６０Ａ、６０Ｂ、６０Ｃが設けられる。また、上記電気ボックス８は、必要な電気部品やガス検出器等が収容されており、この前面にはガス指示計や表示ランプや操作ボタン等の電気系操作表示パネル８Ａが設けられる。そして、これらの各パネル８Ａ、２２Ａは、装置本体４の裏面側である装置本体４のメンテナンス空間６２に臨ませて設けられている。
【００１５】
そして、図３に示すように、この熱処理装置５０を設置するクリーンルームの床は、上床６４と下床６６とよりなる２重構造になされており、この上床６４と下床６６との間に形成されたユティリティ空間６８内に、必要ガスを供給するガス通路７０Ａ、７０Ｂ、７０Ｃ、略常圧での排気を行う常圧排気管７２、必要な装置毎に真空ポンプ７４を設けた真空排気管７６、各種の配線コード７８等が設けられている。尚、本実施例では常圧処理を行うことから、真空ポンプ７４や真空排気管７６は用いられない。更に、このユティリティ空間６８内には、電源トランス等も設置される。
そして、上記各ガス通路７０Ａ〜７０Ｃは、上記ガスボックス６よりその下方へ直接的に延びる各ガス供給管２４Ａ、２４Ｂ、２４Ｃへ接続され、このガスボックス６の上部に設けた各ガス出口６０Ａ、６０Ｂ、６０Ｃと上記処理容器１４とを連絡するようにガス管８０Ａ、８０Ｂ、８０Ｃを接続し、必要なガスを流量制御しつつ処理容器１４内へ供給し得るようになっている。
【００１６】
また、ガスボックス６の下端部には、このガスボックス６内の雰囲気を吸引排気するための複数（図示例では３つ）のボックス排気口８０Ａ、８０Ｂ、８０Ｃが設けられており、各ボックス排気口８０Ａ〜８０Ｃを選択的に使用し得るようになっている。図３に示す場合には、中央に位置するボックス排気口８０Ｂを用いており、これに常圧排気管７２を接続している。このように複数のボックス排気口８０Ａ〜８０Ｃを設けて選択的に利用できるようにした理由は、上記ユティリティ空間６８内に設けた床梁（図示せず）等の障害物によって特定のボックス排気口が利用できなくなる場合を考慮したものである。
また、このガスボックス６の一側を上下方向に貫通させるようにして、上記電気系ボックス８に連絡する配線コード７８を配設している。
【００１７】
このようになされた本発明装置は、一般的には、複数台が隣同士を接して並設されることになる。この本発明装置によれば、ガスボックス６を電気系ボックス８の下段に位置させた状態で両ボックスを接合して一体化物５６とし、この一体化物５６を装置本体４の裏面側にメンテナンスドア５２を避けるようにして取り付けるようにしているので、ガスボックス６からのガス供給管２４Ａ〜２４Ｃは、この一体化物５６の外側を引き回すことなく下方に直接延ばして床下のユティリティ空間６８に配設されている各ガス通路７０Ａ〜７０Ｃに直接連結でき、従来装置で必要とされた配管引き回し用のスペース（図９参照）をなくすことが可能となる。
また、上記したようにガスボックス６と電気系ボックス８との一体化物５６を、装置本体４の裏面側のメンテナンス空間６２の一部に配置させるようになっており、そして、この装置本体４のメンテナンス空間６２と上記一体化物５６をメンテナンスするための一体化物メンテナンス空間とを共用させるようにしている。従って、以上の理由より、装置の占有スペースと装置のメンテナンス空間とを含む全体としての必要スペースを大幅に削減することができる。
【００１８】
このように、本発明装置の第１実施例の省スペース化の効率について、図４を参照して従来装置の場合と比較して説明する。図４（Ａ）は従来装置の配置の場合（図９に対応）を示し、図４（Ｂ）は本発明装置の配置の場合を示し、図中、斜線部分はメンテナンス空間（配管スペースを含む）を示す。図４（Ａ）に従来装置の場合には、装置本体４とガス電気系ボックス６、８の両裏面側にそれぞれメンテナンス空間１８と配管スペース４０を必要としている。この場合、ウエハサイズにもよるが、装置本体４の長さＨ１は１９００ｍｍ程度、メンテナンス空間１８の長さＨ２は１２００ｍｍ程度、ガスボックス６と電気系ボックス８の長さＨ３は６００ｍｍ程度、配管スペース４０の長さＨ４は６００ｍｍ程度である。
尚、このメンテナンス空間１８は、処理容器ヒータを搬出入するヒータ通路も兼ねている。
【００１９】
これに対して、図４（Ｂ）に示す本発明装置の第１実施例の場合には、装置本体４の長さＨ１が同じく１９００ｍｍ程度、一体化物５６の置かれているメンテナンス空間６２の長さＨ５は１０００ｍｍ程度、更にその背面側に必要とされるヒータ通路８０の長さＨ６は８５０ｍｍ程度であり、本発明装置の方が遥かに省スペース化に寄与させることができる。
また、本発明装置の場合には、ガスボックス６から処理容器１４に至るガス管８０Ａ〜８０Ｃ（図３参照）の長さが非常に短いので、従来装置で必要とされたバルブボックス３２（図９参照）を省略することができる。
【００２０】
上記実施例の熱処理装置５０は、大気圧で、或いは大気圧近傍で拡散処理やアニール処理を行う熱処理装置を例にとって説明したが、真空雰囲気下にてＣＶＤ成膜等を行う熱処理装置についても本発明を適用することができる。この真空雰囲気下にてＣＶＤ成膜処理等を行うには大がかりな真空排気系が必要であり、この場合には、図５及び図６に示すように、上記ガスボックス６と電気系ボックス８の一体化物５６に対向するようにメンテナンス空間６２を挟んで排気ボックス３４を装置本体４の裏面に接合させている。この排気ボックス３４は、全体がパネル８２により覆われており、メンテナンス空間６２側は開閉可能になっている（図５中においては一部のパネルを取った状態を示す）。この排気ボックス３４内には開閉弁８４、トラップ機構８６、圧力制御弁８８等が設けられるが、この排気ボックス３４の排気管３８の上端は直接的に処理容器１４へ接続され、この排気管３８の下端は床下に設けた真空ポンプ７４（図３参照）に接続して処理容器１４内を真空引きするようになっている。
【００２１】
この実施例の場合には、先に説明した実施例の作用効果に加えて、装置本体４のメンテナンス空間６２と、一体化物５６をメンテナンスする一体化物メンテナンス空間と、排気ボックス３４をメンテナンスする排気メンテナンス空間とを共用させるようにしているので、全体として必要スペースを更に少なくして省スペース化に寄与することが可能となる。尚、この場合、排気ボックス３４を設置した領域だけメンテナンス空間６２が狭くなるが、上記各部材をメンテナンスするには十分な広さである。
【００２２】
このように、本発明装置の第２実施例の省スペース化の効率について、図７を参照して従来装置の場合と比較して説明する。図７（Ａ）は従来装置の配置の場合（図１１に対応）を示し、図７（Ｂ）は本発明装置の配置の場合を示し、図中斜線部分はメンテナンス空間（配管スペースを含む）を示す。図７（Ａ）に従来装置の場合には、装置本体４とガス電気系ボックス６、８の両裏面側にそれぞれメンテナンス空間１８と配管スペース４０を必要としている。また、排気ボックス３４のメンテナンス空間は、装置本体４のメンテナンス空間を共用している。この場合、ウエハサイズにもよるが、装置本体４の長さＨ１は１９００ｍｍ程度、メンテナンス空間１８の長さＨ２は１２００ｍｍ程度、排気ボックス３４の長さＨ８は６００ｍｍ程度、ガスボックス６と電気系ボックス８の長さＨ３は６００ｍｍ程度、配管スペース４０の長さＨ４は６００ｍｍ程度である。
尚、このメンテナンス空間１８は、処理容器ヒータを搬出入するヒータ通路も兼ねている。
【００２３】
これに対して、図７（Ｂ）に示す本発明装置の第２実施例の場合には、装置本体４の長さＨ１が同じく１９００ｍｍ程度、一体化物５６及び排気ボックス３４の置かれているメンテナンス空間６２の長さＨ５は１０００ｍｍ程度、更にその背面側に必要とされるヒータ通路８０の長さＨ６は８５０ｍｍ程度であり、本発明装置の方が遥かに省スペース化に寄与させることができる。
尚、以上の各数値例は、比較のために単に一例を示したに過ぎず、これらに限定されないのは勿論である。
また、ここでは被処理体として半導体ウエハに対して熱処理する場合を例にとって説明したが、これに限定されず、ＬＣＤ基板、ガラス基板等に熱処理する場合にも、本発明を適用できるのは勿論である。
【００２４】
【発明の効果】
以上説明したように、本発明の熱処理装置によれば、次のように優れた作用効果を発揮することができる。
請求項１、２に係る発明によれば、ガスボックスを電気系ボックスの下段に位置させ、しかも上記両ボックスの一体化物を装置本体の裏面側へ接合するようにしたので、従来必要とされた配管スペースが不要となり、また、一体化物も装置本体のメンテナンス空間の一部に配置されることになるので、装置占有スペースと装置のメンテナンス空間とを含む全体としての必要スペースを大幅に削減することができる。
請求項３、４に係る発明によれば、処理容器内の真空引きを行う排気ボックスも装置本体の裏面に直接接合しているので、全体としての必要スペースを一層削減することができる。
【図面の簡単な説明】
【図１】本発明の熱処理装置の第１実施例の裏面側を示す斜視図である。
【図２】図１に示す装置の平面図である。
【図３】図１に示す装置の側面図である。
【図４】本発明装置の第１実施例の必要スペースの削減効果を説明するための説明図である。
【図５】本発明の熱処理装置の第２実施例の裏面側を示す斜視図である。
【図６】図５に示す装置の平面図である。
【図７】本発明装置の第２実施例の必要スペースの削減効果を説明するための説明図である。
【図８】真空排気系を有しない従来のバッチ式の縦型熱処理装置の一例を示す概略斜視図である。
【図９】図８に示す装置の平面図である。
【図１０】真空排気系を有する従来のバッチ式の縦型熱処理装置の一例を示す概略斜視図である。
【図１１】図１０に示す装置の平面図である。
【符号の説明】
４ 装置本体
６ ガスボックス
８ 電気系ボックス
１４ 処理容器
３４ 排気ボックス
５０ 熱処理装置
５２ メンテナンスドア
５４ フレーム筐体
５６ 一体化物
６０Ａ〜６０Ｃ ガス出口
６２ メンテナンス空間
７０Ａ〜７０Ｃ ガス通路
７２ 常圧排気管
７４ 真空ポンプ
７６ 真空排気管[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a heat treatment apparatus for performing a heat treatment such as a film forming process on an object to be processed such as a semiconductor wafer.
[0002]
[Prior art]
In general, a semiconductor integrated circuit is formed by repeatedly performing various processes such as a film forming process, an oxidation diffusion process, an annealing process, and an etching process on an object to be processed such as a semiconductor wafer. Among the heat treatment apparatuses to be performed, a so-called batch type vertical heat treatment apparatus capable of performing treatment on a large number of semiconductor wafers at a time is often used.
8 is a schematic perspective view showing an example of a conventional batch type vertical heat treatment apparatus having no vacuum exhaust system, FIG. 9 is a plan view of the apparatus shown in FIG. 8, and FIG. 10 is a conventional batch type having a vacuum exhaust system. FIG. 11 is a plan view of the apparatus shown in FIG. 10.
[0003]
The heat treatment apparatus 2 is mainly composed of an apparatus main body 4, a gas box 6, and an electric system box 8. The apparatus main body 4 is entirely surrounded by a casing 12, in which a heater is disposed around the apparatus main body 4 so as to perform a predetermined heat treatment on a large number of semiconductor wafers at once inside. A container 14 is provided, and on the front side thereof, a loading / unloading port 16 for loading / unloading a carrier (not shown) containing a semiconductor wafer is formed. The carry-in / out port 16 side is the operation surface side, and the opposite side is the back surface side. Further, although not shown in the figure, the housing 12 is provided with various mechanisms and members such as a cassette stocker for placing a cassette, a wafer transfer machine, and a boat elevator.
[0004]
The gas box 6 and the electric system box 8 are stacked one above the other with the gas box 6 as an upper stage. The gas box 6 and the electric system box 8 are provided on the back side of the apparatus body 4 with a maintenance space 18 therebetween, and a processing gas necessary for heat treatment such as diffusion treatment is placed inside the gas box 6. A gas control unit 20 containing a filter to be cleaned, an on-off valve, a flow rate controller such as a mass flow controller, and the like is housed. The entire gas box 6 is covered with a gas box housing 22, and a gas operation display panel 22A is provided on the front surface thereof. A plurality of gas supply lines 24A, 24B, and 24C in the illustrated example are connected to the gas box 6, and each of these gas supply lines 24A to 24C is routed downward to supply necessary gas. It introduce | transduces from the concentrated gas source arrange | positioned under the floor. A box exhaust line 26 extends downward from the gas box 6 so that the inside of the gas box 6 is sucked and exhausted by an exhaust facility provided under the floor. The electric system box 8 contains necessary electric parts. A power transformer or the like is installed below the floor of a clean room where the power transformer is installed.
[0005]
The apparatus main body 4 and the gas box 6 are connected by a wiring duct 28, and various processing gases are supplied from the gas box 6 to the inside of the processing container 14 through various gas pipes 30 in the lower part. It has come to be able to do. Necessary wiring cables are accommodated in the duct 28. A valve box 32 connected to the gas pipe 30 is provided in the gas intake section on the apparatus main body 4 side. A final opening / closing valve and a filter are built in the valve box 32 to route the pipe. This prevents the deterioration of the flow control accuracy caused by this.
The heat treatment apparatus 2 is an apparatus that performs a diffusion process or an annealing process at or near atmospheric pressure. However, a large-scale vacuum exhaust system is required to perform a CVD film forming process. As shown in FIGS. 10 and 11, an exhaust box 34 is provided side by side on the integrated product of the gas box 6 and the electric system box 8. In this case, the gas box 6 and the electric system box 8 are operated toward the opposite side to the case shown in FIGS. In the exhaust box 34, an open / close valve, a pressure control valve, a trap mechanism and the like (not shown) are provided via an exhaust pipe 38. The exhaust pipe 38 of the exhaust box 34 and the apparatus main body 4 are connected to each other. The processing vessel 14 is connected by a large-diameter vacuum exhaust pipe 36, and the exhaust pipe 38 is connected to a vacuum pump (not shown) provided under the floor so that the inside of the processing container 14 is evacuated. Yes.
[0006]
[Problems to be solved by the invention]
By the way, a clean room in which this type of heat treatment apparatus is installed has a very high maintenance cost per unit area, so it is of course necessary to reduce the space occupied by the apparatus itself. It is required to reduce the space to be secured for maintenance as much as possible.
However, since many of the clean rooms are provided with a gas supply line and an exhaust line below the apparatus, in the above-described conventional heat treatment apparatus 2, the integrated body of the gas box 6 and the electric system box 8 and the apparatus main body are provided. In addition to the need for providing a maintenance space 18 between the gas supply lines 24 and 4, a piping space 40 for arranging the gas supply lines 24 </ b> A to 24 </ b> C and the box exhaust line 26 is also required on the back side of the integrated product. There was a problem that the required space would become very large. 10 and 11, there is a problem that a maintenance space 42 having a larger area than the piping space 40 must be provided on the gas operation panel 22A side of the integrated product. It was.
[0007]
In particular, as the wafer size increases from 20 cm (8 inches) to 30 cm (12 inches), the apparatus itself becomes much larger, and an early solution of the above-described problems is desired.
The present invention has been devised to pay attention to the above problems and to effectively solve them. An object of the present invention is to provide a heat treatment apparatus capable of greatly reducing not only the space occupied by the apparatus but also the necessary space including this maintenance space.
[0008]
[Means for Solving the Problems]
According to the first aspect of the present invention, there is provided an apparatus main body for storing a processing container for performing a predetermined process with a processing gas on a plurality of objects to be processed, and a gas for storing a gas control unit for controlling the supply of the processing gas. In a heat treatment apparatus having a box and an electric system box that houses an electric component , a maintenance door is provided on the back surface of the apparatus main body, and the gas box and the electric system box are framed with the gas box facing downward. with the integrated product by joining up and down in the housing, the side surface of the integrated product on the back of the device body, which is constituted so as to couple to avoid the maintenance door.
As a result, the gas box is positioned at the lower stage of the electric system box, and the integrated product of the two boxes is joined to the back side of the main body of the apparatus. Since the chemicals are also arranged in a part of the maintenance space of the apparatus main body, it is possible to greatly reduce the necessary space as a whole including the apparatus occupation space and the maintenance space of the apparatus.
[0009]
In this case, for example, as defined in claim 2, the gas operation panel of the gas box and the electric operation panel of the electric system box are arranged facing a maintenance space located behind the maintenance door. .
Further, for example, as defined in claim 3, an exhaust box for accommodating an exhaust unit for controlling evacuation in the processing container is opposed to the integrated object with the maintenance space interposed therebetween, and Join to the back side.
According to this, since the exhaust box for evacuating the processing container is also directly bonded to the back surface of the apparatus main body, the necessary space as a whole can be further reduced.
[0010]
In this case, for example, as defined in claim 4, an integrated object maintenance space for maintaining the integrated object, an exhaust maintenance space for maintaining the exhaust box, and a maintenance space for the apparatus main body are shared.
[0011]
DETAILED DESCRIPTION OF THE INVENTION
Hereinafter, an embodiment of a heat treatment apparatus according to the present invention will be described in detail with reference to the accompanying drawings.
1 is a perspective view showing the back side of a first embodiment of the heat treatment apparatus of the present invention, FIG. 2 is a plan view of the apparatus shown in FIG. 1, FIG. 3 is a side view of the apparatus shown in FIG. It is explanatory drawing for demonstrating the reduction effect of the required space of 1st Example of an apparatus. In the following description, the same components as those of the conventional device described above are denoted by the same reference numerals.
The heat treatment apparatus 50 is an apparatus that performs heat treatment such as diffusion treatment at or near atmospheric pressure, and does not include a vacuum exhaust system here, as will be described later.
[0012]
First, the heat treatment apparatus 50 is mainly composed of the apparatus main body 4, the gas box 6, and the electric system box 8. The apparatus main body 4 is entirely surrounded by a casing 12, in which a heater is disposed around the apparatus body 4, and a predetermined heat treatment such as thermal diffusion is performed on a large number of semiconductor wafers at a time. A vertical processing container 14 is provided, and on the front side thereof, a loading / unloading port 16 for carrying in / out a carrier (not shown) containing a semiconductor wafer and a main body operation panel 17 (see FIG. 2) are formed. ing. The carry-in / out port 16 side is the operation surface side, and the opposite side is the back surface side.
Further, although not shown in the figure, the housing 12 is provided with various mechanisms and members such as a cassette stocker for placing a cassette, a wafer transfer machine, and a boat elevator. In addition, a maintenance door 52 that can be opened and closed when the processing container 14 is carried in and out or when the inside of the apparatus main body 4 is maintained is provided on the back side of the casing 12 so as to be opened and closed.
[0013]
The gas box 6 and the electric system box 8 are stacked one above the other with the gas box 6 at the bottom. The gas box 6 and the electric system box 8 are joined up and down by a frame housing 54 assembled in a vertically long rectangular parallelepiped shape using a frame, and are configured as an integrated object 56. Then, the narrow side surface of the integrated object 56 is joined to be connected to one side of the back surface of the apparatus body 4. In this case, as a matter of course, the integrated object 56 is joined so as to avoid the maintenance door 52.
[0014]
The gas box 6 contains a gas control unit (not shown) containing a filter for purifying a processing gas necessary for heat treatment such as diffusion treatment, a flow controller such as an on-off valve and a mass flow controller. ing. The entire gas box 6 is covered with a plate 58, a gas operation display panel 22A is provided on a part of the front surface thereof, and the front panel 58 can be opened and closed. A plurality of, in the illustrated example, three gas outlets 60A, 60B, and 60C are provided in the upper portion of the gas box 6. The electrical box 8 contains necessary electrical components, gas detectors, and the like, and an electric system operation display panel 8A such as a gas indicator, a display lamp, and operation buttons is provided on the front surface thereof. The panels 8A and 22A are provided facing the maintenance space 62 of the apparatus main body 4 on the back side of the apparatus main body 4.
[0015]
As shown in FIG. 3, the floor of the clean room where the heat treatment apparatus 50 is installed has a double structure including an upper floor 64 and a lower floor 66, and is formed between the upper floor 64 and the lower floor 66. Gas passages 70A, 70B, 70C for supplying necessary gas, a normal pressure exhaust pipe 72 for exhausting at a substantially normal pressure, a vacuum exhaust pipe 76 provided with a vacuum pump 74 for each required device, Various wiring cords 78 and the like are provided. In this embodiment, since the normal pressure process is performed, the vacuum pump 74 and the vacuum exhaust pipe 76 are not used. Further, in this utility space 68, a power transformer or the like is also installed.
The gas passages 70A to 70C are connected to the gas supply pipes 24A, 24B, 24C extending directly downward from the gas box 6, and the gas outlets 60A provided at the upper part of the gas box 6 The gas pipes 80A, 80B, 80C are connected so as to connect the 60B, 60C and the processing container 14 so that necessary gas can be supplied into the processing container 14 while controlling the flow rate.
[0016]
In addition, a plurality of (three in the illustrated example) box exhaust ports 80A, 80B, and 80C for sucking and exhausting the atmosphere in the gas box 6 are provided at the lower end of the gas box 6, and each box exhaust is exhausted. The mouths 80A to 80C can be selectively used. In the case shown in FIG. 3, a box exhaust port 80B located in the center is used, and a normal pressure exhaust pipe 72 is connected thereto. The reason why the plurality of box exhaust openings 80A to 80C are provided so as to be selectively used is that a specific box exhaust opening is provided by an obstacle such as a floor beam (not shown) provided in the utility space 68. This is for the case where is no longer available.
Further, a wiring cord 78 connected to the electric system box 8 is disposed so as to penetrate one side of the gas box 6 in the vertical direction.
[0017]
In general, the device of the present invention made in this way is arranged in parallel with a plurality of devices in contact with each other. According to the apparatus of the present invention, the two boxes are joined to form an integrated object 56 with the gas box 6 positioned at the lower stage of the electric system box 8, and the integrated object 56 is connected to the maintenance door 52 on the back side of the apparatus main body 4. Therefore, the gas supply pipes 24A to 24C from the gas box 6 are arranged directly in the utility space 68 under the floor by directly extending downward without routing the outside of the integrated body 56. It is possible to directly connect to the gas passages 70A to 70C, and it is possible to eliminate the space for pipe routing (see FIG. 9) required in the conventional apparatus.
Further, as described above, the integrated object 56 of the gas box 6 and the electric system box 8 is arranged in a part of the maintenance space 62 on the back side of the apparatus main body 4. The maintenance space 62 and the integrated object maintenance space for maintaining the integrated object 56 are shared. Therefore, the necessary space as a whole including the occupation space of the apparatus and the maintenance space of the apparatus can be greatly reduced for the above reasons.
[0018]
Thus, the efficiency of space saving in the first embodiment of the apparatus of the present invention will be described with reference to FIG. 4 in comparison with the conventional apparatus. 4A shows the case of the arrangement of the conventional apparatus (corresponding to FIG. 9), FIG. 4B shows the case of the arrangement of the apparatus of the present invention, and the hatched portion in the figure indicates the maintenance space (including the piping space). ). In the case of the conventional apparatus shown in FIG. 4A, a maintenance space 18 and a piping space 40 are required on both the back surfaces of the apparatus main body 4 and the gas electric system boxes 6 and 8, respectively. In this case, although depending on the wafer size, the length H1 of the apparatus main body 4 is about 1900 mm, the length H2 of the maintenance space 18 is about 1200 mm, the length H3 of the gas box 6 and the electric system box 8 is about 600 mm, and the piping space The length H4 of 40 is about 600 mm.
The maintenance space 18 also serves as a heater passage for carrying in and out the processing container heater.
[0019]
On the other hand, in the case of the first embodiment of the apparatus of the present invention shown in FIG. 4B, the length H1 of the apparatus body 4 is also about 1900 mm, and the length of the maintenance space 62 in which the integrated object 56 is placed. The length H5 is about 1000 mm, and the length H6 of the heater passage 80 required on the back side thereof is about 850 mm, so that the apparatus of the present invention can contribute to much space saving.
In the case of the apparatus of the present invention, the length of the gas pipes 80A to 80C (see FIG. 3) from the gas box 6 to the processing container 14 is very short, so that the valve box 32 (see FIG. 9) can be omitted.
[0020]
The heat treatment apparatus 50 of the above embodiment has been described by taking a heat treatment apparatus that performs a diffusion process or an annealing process at or near atmospheric pressure as an example, but the present invention is also applicable to a heat treatment apparatus that performs CVD film formation in a vacuum atmosphere. The invention can be applied. In order to perform the CVD film forming process or the like in this vacuum atmosphere, a large-scale evacuation system is required. In this case, as shown in FIGS. The exhaust box 34 is joined to the back surface of the apparatus main body 4 with the maintenance space 62 interposed therebetween so as to face the integrated object 56. The exhaust box 34 is entirely covered with a panel 82, and the maintenance space 62 side can be opened and closed (in FIG. 5, a part of the panel is shown). An open / close valve 84, a trap mechanism 86, a pressure control valve 88, and the like are provided in the exhaust box 34. The upper end of the exhaust pipe 38 of the exhaust box 34 is directly connected to the processing container 14, and the exhaust pipe 38 Is connected to a vacuum pump 74 (see FIG. 3) provided under the floor to evacuate the inside of the processing vessel 14.
[0021]
In the case of this embodiment, in addition to the functions and effects of the above-described embodiment, the maintenance space 62 of the apparatus body 4, the integrated object maintenance space for maintaining the integrated object 56, and the exhaust maintenance for maintaining the exhaust box 34 are provided. Since the space is shared, it is possible to contribute to space saving by further reducing the necessary space as a whole. In this case, the maintenance space 62 is narrowed only in the area where the exhaust box 34 is installed, but it is wide enough to maintain the above-mentioned members.
[0022]
Thus, the space saving efficiency of the second embodiment of the apparatus of the present invention will be described with reference to FIG. 7 in comparison with the conventional apparatus. 7A shows the case of the arrangement of the conventional apparatus (corresponding to FIG. 11), FIG. 7B shows the case of the arrangement of the apparatus of the present invention, and the hatched portion in the figure indicates the maintenance space (including the piping space). Indicates. In the case of the conventional apparatus shown in FIG. 7A, a maintenance space 18 and a piping space 40 are required on both back sides of the apparatus main body 4 and the gas electric system boxes 6 and 8, respectively. In addition, the maintenance space of the exhaust box 34 shares the maintenance space of the apparatus body 4. In this case, although depending on the wafer size, the length H1 of the apparatus main body 4 is about 1900 mm, the length H2 of the maintenance space 18 is about 1200 mm, the length H8 of the exhaust box 34 is about 600 mm, the gas box 6 and the electric system box. The length H3 of 8 is about 600 mm, and the length H4 of the piping space 40 is about 600 mm.
The maintenance space 18 also serves as a heater passage for carrying in and out the processing container heater.
[0023]
On the other hand, in the case of the second embodiment of the device of the present invention shown in FIG. 7B, the length H1 of the device body 4 is also about 1900 mm, and the integrated object 56 and the exhaust box 34 are placed. The length H5 of the space 62 is about 1000 mm, and the length H6 of the heater passage 80 required on the back side thereof is about 850 mm, so that the apparatus of the present invention can contribute to further space saving.
It should be noted that the above numerical examples are merely examples for comparison and are of course not limited thereto.
Although the case where a semiconductor wafer is heat-treated as an object to be processed has been described as an example here, the present invention is not limited to this, and the present invention can be applied to a case where heat treatment is performed on an LCD substrate, a glass substrate, or the like. It is.
[0024]
【The invention's effect】
As described above, according to the heat treatment apparatus of the present invention, the following excellent effects can be achieved.
According to the first and second aspects of the invention, the gas box is positioned at the lower stage of the electric system box, and the integrated product of the two boxes is joined to the back side of the apparatus main body. Piping space is not required, and the integrated product is also located in a part of the maintenance space of the equipment body, greatly reducing the overall required space including the equipment occupation space and equipment maintenance space. Can do.
According to the third and fourth aspects of the invention, since the exhaust box for evacuating the processing container is also directly joined to the back surface of the apparatus main body, the necessary space as a whole can be further reduced.
[Brief description of the drawings]
FIG. 1 is a perspective view showing the back side of a first embodiment of a heat treatment apparatus of the present invention.
FIG. 2 is a plan view of the apparatus shown in FIG.
FIG. 3 is a side view of the apparatus shown in FIG. 1;
FIG. 4 is an explanatory diagram for explaining the effect of reducing the required space of the first embodiment of the device of the present invention;
FIG. 5 is a perspective view showing the back side of a second embodiment of the heat treatment apparatus of the present invention.
6 is a plan view of the apparatus shown in FIG.
FIG. 7 is an explanatory diagram for explaining the effect of reducing the required space of the second embodiment of the apparatus of the present invention.
FIG. 8 is a schematic perspective view showing an example of a conventional batch type vertical heat treatment apparatus that does not have an evacuation system.
9 is a plan view of the apparatus shown in FIG.
FIG. 10 is a schematic perspective view showing an example of a conventional batch type vertical heat treatment apparatus having an evacuation system.
11 is a plan view of the apparatus shown in FIG.
[Explanation of symbols]
4 apparatus main body 6 gas box 8 electric system box 14 processing container 34 exhaust box 50 heat treatment apparatus 52 maintenance door 54 frame housing 56 integrated object 60A-60C gas outlet 62 maintenance space 70A-70C gas passage 72 atmospheric pressure exhaust pipe 74 vacuum pump 76 Vacuum exhaust pipe

Claims (4)

複数の被処理体に対して処理ガスにより所定の処理を施すための処理容器を収容する装置本体と、前記処理ガスの供給を制御するガス制御ユニットを収容するガスボックスと、電気部品を収容する電気系ボックスとを有する熱処理装置において、前記装置本体の裏面にメンテナンスドアを設け、前記ガスボックスと前記電気系ボックスとを、前記ガスボックスを下方にした状態でフレーム筐体で上下に接合して一体化物とすると共に、この一体化物の側面を前記装置本体の裏面に、前記メンテナンスドアを避けて連結するように構成したことを特徴とする熱処理装置。An apparatus main body for storing a processing container for performing a predetermined process with a processing gas on a plurality of objects to be processed, a gas box for storing a gas control unit for controlling the supply of the processing gas, and an electrical component are stored. In the heat treatment apparatus having an electric system box, a maintenance door is provided on the back surface of the apparatus main body, and the gas box and the electric system box are joined up and down with a frame casing in a state where the gas box is positioned downward. with the integrated product, a heat treatment apparatus, wherein a side surface of the integrated product on the back surface of the apparatus main body, and configured to connect to avoid the maintenance door. 前記ガスボックスのガス操作パネルと、前記電気系ボックスの電気操作パネルとは、前記メンテナンスドアの後方に位置するメンテナンス空間に臨ませて配置されることを特徴とする請求項１記載の熱処理装置。2. The heat treatment apparatus according to claim 1, wherein the gas operation panel of the gas box and the electric operation panel of the electric system box are arranged facing a maintenance space located behind the maintenance door. 前記処理容器内の真空引きを制御するための排気ユニットを収容する排気ボックスを、前記メンテナンス空間を挟んで前記一体化物に対向させて前記装置本体の裏面に接合するようにしたことを特徴とする請求項２記載の熱処理装置。An exhaust box for accommodating an exhaust unit for controlling the evacuation in the processing container is joined to the back surface of the apparatus main body so as to face the integrated object with the maintenance space interposed therebetween. The heat treatment apparatus according to claim 2. 前記一体化物のメンテナンスを行う一体化物メンテナンス空間と、前記排気ボックスのメンテナンスを行う排気メンテナンス空間と、前記装置本体のメンテナンス空間とを共用するようにしたことを特徴とする請求項３記載の熱処理装置。4. The heat treatment apparatus according to claim 3, wherein an integrated object maintenance space for maintaining the integrated object, an exhaust maintenance space for maintaining the exhaust box, and a maintenance space for the apparatus main body are shared. .
JP2000364959A 2000-11-30 2000-11-30 Heat treatment equipment Expired - Fee Related JP3610900B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2000364959A JP3610900B2 (en) 2000-11-30 2000-11-30 Heat treatment equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000364959A JP3610900B2 (en) 2000-11-30 2000-11-30 Heat treatment equipment

Publications (2)

Publication Number Publication Date
JP2002170781A JP2002170781A (en) 2002-06-14
JP3610900B2 true JP3610900B2 (en) 2005-01-19

Family

ID=18835814

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000364959A Expired - Fee Related JP3610900B2 (en) 2000-11-30 2000-11-30 Heat treatment equipment

Country Status (1)

Country Link
JP (1) JP3610900B2 (en)

Families Citing this family (306)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10378106B2 (en) 2008-11-14 2019-08-13 Asm Ip Holding B.V. Method of forming insulation film by modified PEALD
US9394608B2 (en) 2009-04-06 2016-07-19 Asm America, Inc. Semiconductor processing reactor and components thereof
US8802201B2 (en) 2009-08-14 2014-08-12 Asm America, Inc. Systems and methods for thin-film deposition of metal oxides using excited nitrogen-oxygen species
US9312155B2 (en) 2011-06-06 2016-04-12 Asm Japan K.K. High-throughput semiconductor-processing apparatus equipped with multiple dual-chamber modules
US10854498B2 (en) 2011-07-15 2020-12-01 Asm Ip Holding B.V. Wafer-supporting device and method for producing same
US20130023129A1 (en) 2011-07-20 2013-01-24 Asm America, Inc. Pressure transmitter for a semiconductor processing environment
US9017481B1 (en) 2011-10-28 2015-04-28 Asm America, Inc. Process feed management for semiconductor substrate processing
US9659799B2 (en) 2012-08-28 2017-05-23 Asm Ip Holding B.V. Systems and methods for dynamic semiconductor process scheduling
US10714315B2 (en) 2012-10-12 2020-07-14 Asm Ip Holdings B.V. Semiconductor reaction chamber showerhead
US20160376700A1 (en) 2013-02-01 2016-12-29 Asm Ip Holding B.V. System for treatment of deposition reactor
US10683571B2 (en) 2014-02-25 2020-06-16 Asm Ip Holding B.V. Gas supply manifold and method of supplying gases to chamber using same
US10167557B2 (en) 2014-03-18 2019-01-01 Asm Ip Holding B.V. Gas distribution system, reactor including the system, and methods of using the same
US11015245B2 (en) 2014-03-19 2021-05-25 Asm Ip Holding B.V. Gas-phase reactor and system having exhaust plenum and components thereof
US10858737B2 (en) 2014-07-28 2020-12-08 Asm Ip Holding B.V. Showerhead assembly and components thereof
US9890456B2 (en) 2014-08-21 2018-02-13 Asm Ip Holding B.V. Method and system for in situ formation of gas-phase compounds
US9657845B2 (en) 2014-10-07 2017-05-23 Asm Ip Holding B.V. Variable conductance gas distribution apparatus and method
US10941490B2 (en) 2014-10-07 2021-03-09 Asm Ip Holding B.V. Multiple temperature range susceptor, assembly, reactor and system including the susceptor, and methods of using the same
KR102263121B1 (en) 2014-12-22 2021-06-09 에이에스엠 아이피 홀딩 비.브이. Semiconductor device and manufacuring method thereof
US10529542B2 (en) 2015-03-11 2020-01-07 Asm Ip Holdings B.V. Cross-flow reactor and method
US10276355B2 (en) 2015-03-12 2019-04-30 Asm Ip Holding B.V. Multi-zone reactor, system including the reactor, and method of using the same
US10458018B2 (en) 2015-06-26 2019-10-29 Asm Ip Holding B.V. Structures including metal carbide material, devices including the structures, and methods of forming same
US10600673B2 (en) 2015-07-07 2020-03-24 Asm Ip Holding B.V. Magnetic susceptor to baseplate seal
US9960072B2 (en) 2015-09-29 2018-05-01 Asm Ip Holding B.V. Variable adjustment for precise matching of multiple chamber cavity housings
US10211308B2 (en) 2015-10-21 2019-02-19 Asm Ip Holding B.V. NbMC layers
US11139308B2 (en) 2015-12-29 2021-10-05 Asm Ip Holding B.V. Atomic layer deposition of III-V compounds to form V-NAND devices
US10529554B2 (en) 2016-02-19 2020-01-07 Asm Ip Holding B.V. Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches
US10468251B2 (en) 2016-02-19 2019-11-05 Asm Ip Holding B.V. Method for forming spacers using silicon nitride film for spacer-defined multiple patterning
US10190213B2 (en) 2016-04-21 2019-01-29 Asm Ip Holding B.V. Deposition of metal borides
US10865475B2 (en) 2016-04-21 2020-12-15 Asm Ip Holding B.V. Deposition of metal borides and silicides
US10032628B2 (en) 2016-05-02 2018-07-24 Asm Ip Holding B.V. Source/drain performance through conformal solid state doping
US10367080B2 (en) 2016-05-02 2019-07-30 Asm Ip Holding B.V. Method of forming a germanium oxynitride film
US11453943B2 (en) 2016-05-25 2022-09-27 Asm Ip Holding B.V. Method for forming carbon-containing silicon/metal oxide or nitride film by ALD using silicon precursor and hydrocarbon precursor
US10388509B2 (en) 2016-06-28 2019-08-20 Asm Ip Holding B.V. Formation of epitaxial layers via dislocation filtering
KR20190045410A (en) 2016-06-30 2019-05-02 가부시키가이샤 코쿠사이 엘렉트릭 Substrate processing device, method for manufacturing semiconductor device, and recording medium
JP6891252B2 (en) * 2016-06-30 2021-06-18 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ Substrate processing equipment, semiconductor device manufacturing methods, programs and recording media
US9859151B1 (en) 2016-07-08 2018-01-02 Asm Ip Holding B.V. Selective film deposition method to form air gaps
US10612137B2 (en) 2016-07-08 2020-04-07 Asm Ip Holdings B.V. Organic reactants for atomic layer deposition
US10714385B2 (en) 2016-07-19 2020-07-14 Asm Ip Holding B.V. Selective deposition of tungsten
KR102532607B1 (en) 2016-07-28 2023-05-15 에이에스엠 아이피 홀딩 비.브이. Substrate processing apparatus and method of operating the same
US9887082B1 (en) 2016-07-28 2018-02-06 Asm Ip Holding B.V. Method and apparatus for filling a gap
US9812320B1 (en) 2016-07-28 2017-11-07 Asm Ip Holding B.V. Method and apparatus for filling a gap
US10395919B2 (en) 2016-07-28 2019-08-27 Asm Ip Holding B.V. Method and apparatus for filling a gap
US10410943B2 (en) 2016-10-13 2019-09-10 Asm Ip Holding B.V. Method for passivating a surface of a semiconductor and related systems
US10643826B2 (en) 2016-10-26 2020-05-05 Asm Ip Holdings B.V. Methods for thermally calibrating reaction chambers
US11532757B2 (en) 2016-10-27 2022-12-20 Asm Ip Holding B.V. Deposition of charge trapping layers
US10229833B2 (en) 2016-11-01 2019-03-12 Asm Ip Holding B.V. Methods for forming a transition metal nitride film on a substrate by atomic layer deposition and related semiconductor device structures
US10435790B2 (en) 2016-11-01 2019-10-08 Asm Ip Holding B.V. Method of subatmospheric plasma-enhanced ALD using capacitively coupled electrodes with narrow gap
US10714350B2 (en) 2016-11-01 2020-07-14 ASM IP Holdings, B.V. Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures
US10134757B2 (en) 2016-11-07 2018-11-20 Asm Ip Holding B.V. Method of processing a substrate and a device manufactured by using the method
KR102546317B1 (en) 2016-11-15 2023-06-21 에이에스엠 아이피 홀딩 비.브이. Gas supply unit and substrate processing apparatus including the same
US10340135B2 (en) 2016-11-28 2019-07-02 Asm Ip Holding B.V. Method of topologically restricted plasma-enhanced cyclic deposition of silicon or metal nitride
KR20180068582A (en) 2016-12-14 2018-06-22 에이에스엠 아이피 홀딩 비.브이. Substrate processing apparatus
US11447861B2 (en) 2016-12-15 2022-09-20 Asm Ip Holding B.V. Sequential infiltration synthesis apparatus and a method of forming a patterned structure
US11581186B2 (en) 2016-12-15 2023-02-14 Asm Ip Holding B.V. Sequential infiltration synthesis apparatus
KR102700194B1 (en) 2016-12-19 2024-08-28 에이에스엠 아이피 홀딩 비.브이. Substrate processing apparatus
US10269558B2 (en) 2016-12-22 2019-04-23 Asm Ip Holding B.V. Method of forming a structure on a substrate
US10867788B2 (en) 2016-12-28 2020-12-15 Asm Ip Holding B.V. Method of forming a structure on a substrate
US11390950B2 (en) 2017-01-10 2022-07-19 Asm Ip Holding B.V. Reactor system and method to reduce residue buildup during a film deposition process
US10655221B2 (en) 2017-02-09 2020-05-19 Asm Ip Holding B.V. Method for depositing oxide film by thermal ALD and PEALD
US10468261B2 (en) 2017-02-15 2019-11-05 Asm Ip Holding B.V. Methods for forming a metallic film on a substrate by cyclical deposition and related semiconductor device structures
US10529563B2 (en) 2017-03-29 2020-01-07 Asm Ip Holdings B.V. Method for forming doped metal oxide films on a substrate by cyclical deposition and related semiconductor device structures
KR102457289B1 (en) 2017-04-25 2022-10-21 에이에스엠 아이피 홀딩 비.브이. Method for depositing a thin film and manufacturing a semiconductor device
US10892156B2 (en) 2017-05-08 2021-01-12 Asm Ip Holding B.V. Methods for forming a silicon nitride film on a substrate and related semiconductor device structures
US10446393B2 (en) 2017-05-08 2019-10-15 Asm Ip Holding B.V. Methods for forming silicon-containing epitaxial layers and related semiconductor device structures
US10770286B2 (en) 2017-05-08 2020-09-08 Asm Ip Holdings B.V. Methods for selectively forming a silicon nitride film on a substrate and related semiconductor device structures
US10504742B2 (en) 2017-05-31 2019-12-10 Asm Ip Holding B.V. Method of atomic layer etching using hydrogen plasma
US10886123B2 (en) 2017-06-02 2021-01-05 Asm Ip Holding B.V. Methods for forming low temperature semiconductor layers and related semiconductor device structures
US12040200B2 (en) 2017-06-20 2024-07-16 Asm Ip Holding B.V. Semiconductor processing apparatus and methods for calibrating a semiconductor processing apparatus
US11306395B2 (en) 2017-06-28 2022-04-19 Asm Ip Holding B.V. Methods for depositing a transition metal nitride film on a substrate by atomic layer deposition and related deposition apparatus
US10685834B2 (en) 2017-07-05 2020-06-16 Asm Ip Holdings B.V. Methods for forming a silicon germanium tin layer and related semiconductor device structures
KR20190009245A (en) 2017-07-18 2019-01-28 에이에스엠 아이피 홀딩 비.브이. Methods for forming a semiconductor device structure and related semiconductor device structures
US11018002B2 (en) 2017-07-19 2021-05-25 Asm Ip Holding B.V. Method for selectively depositing a Group IV semiconductor and related semiconductor device structures
US11374112B2 (en) 2017-07-19 2022-06-28 Asm Ip Holding B.V. Method for depositing a group IV semiconductor and related semiconductor device structures
US10541333B2 (en) 2017-07-19 2020-01-21 Asm Ip Holding B.V. Method for depositing a group IV semiconductor and related semiconductor device structures
US10605530B2 (en) 2017-07-26 2020-03-31 Asm Ip Holding B.V. Assembly of a liner and a flange for a vertical furnace as well as the liner and the vertical furnace
US10590535B2 (en) 2017-07-26 2020-03-17 Asm Ip Holdings B.V. Chemical treatment, deposition and/or infiltration apparatus and method for using the same
US10692741B2 (en) 2017-08-08 2020-06-23 Asm Ip Holdings B.V. Radiation shield
US10770336B2 (en) 2017-08-08 2020-09-08 Asm Ip Holding B.V. Substrate lift mechanism and reactor including same
US11769682B2 (en) 2017-08-09 2023-09-26 Asm Ip Holding B.V. Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith
US11139191B2 (en) 2017-08-09 2021-10-05 Asm Ip Holding B.V. Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith
US10249524B2 (en) 2017-08-09 2019-04-02 Asm Ip Holding B.V. Cassette holder assembly for a substrate cassette and holding member for use in such assembly
USD900036S1 (en) 2017-08-24 2020-10-27 Asm Ip Holding B.V. Heater electrical connector and adapter
US11830730B2 (en) 2017-08-29 2023-11-28 Asm Ip Holding B.V. Layer forming method and apparatus
KR102491945B1 (en) 2017-08-30 2023-01-26 에이에스엠 아이피 홀딩 비.브이. Substrate processing apparatus
US11295980B2 (en) 2017-08-30 2022-04-05 Asm Ip Holding B.V. Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures
US11056344B2 (en) 2017-08-30 2021-07-06 Asm Ip Holding B.V. Layer forming method
KR102401446B1 (en) 2017-08-31 2022-05-24 에이에스엠 아이피 홀딩 비.브이. Substrate processing apparatus
US10607895B2 (en) 2017-09-18 2020-03-31 Asm Ip Holdings B.V. Method for forming a semiconductor device structure comprising a gate fill metal
KR102630301B1 (en) 2017-09-21 2024-01-29 에이에스엠 아이피 홀딩 비.브이. Method of sequential infiltration synthesis treatment of infiltrateable material and structures and devices formed using same
US10844484B2 (en) 2017-09-22 2020-11-24 Asm Ip Holding B.V. Apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods
US10658205B2 (en) 2017-09-28 2020-05-19 Asm Ip Holdings B.V. Chemical dispensing apparatus and methods for dispensing a chemical to a reaction chamber
US10403504B2 (en) 2017-10-05 2019-09-03 Asm Ip Holding B.V. Method for selectively depositing a metallic film on a substrate
US10319588B2 (en) 2017-10-10 2019-06-11 Asm Ip Holding B.V. Method for depositing a metal chalcogenide on a substrate by cyclical deposition
US10923344B2 (en) 2017-10-30 2021-02-16 Asm Ip Holding B.V. Methods for forming a semiconductor structure and related semiconductor structures
US10910262B2 (en) 2017-11-16 2021-02-02 Asm Ip Holding B.V. Method of selectively depositing a capping layer structure on a semiconductor device structure
KR102443047B1 (en) 2017-11-16 2022-09-14 에이에스엠 아이피 홀딩 비.브이. Method of processing a substrate and a device manufactured by the same
US11022879B2 (en) 2017-11-24 2021-06-01 Asm Ip Holding B.V. Method of forming an enhanced unexposed photoresist layer
WO2019103610A1 (en) 2017-11-27 2019-05-31 Asm Ip Holding B.V. Apparatus including a clean mini environment
JP7214724B2 (en) 2017-11-27 2023-01-30 エーエスエム アイピー ホールディング ビー．ブイ． Storage device for storing wafer cassettes used in batch furnaces
US10872771B2 (en) 2018-01-16 2020-12-22 Asm Ip Holding B. V. Method for depositing a material film on a substrate within a reaction chamber by a cyclical deposition process and related device structures
CN111630203A (en) 2018-01-19 2020-09-04 Asm Ip私人控股有限公司 Method for depositing gap filling layer by plasma auxiliary deposition
TWI799494B (en) 2018-01-19 2023-04-21 荷蘭商Ａｓｍ 智慧財產控股公司 Deposition method
USD903477S1 (en) 2018-01-24 2020-12-01 Asm Ip Holdings B.V. Metal clamp
US11018047B2 (en) 2018-01-25 2021-05-25 Asm Ip Holding B.V. Hybrid lift pin
US10535516B2 (en) 2018-02-01 2020-01-14 Asm Ip Holdings B.V. Method for depositing a semiconductor structure on a surface of a substrate and related semiconductor structures
USD880437S1 (en) 2018-02-01 2020-04-07 Asm Ip Holding B.V. Gas supply plate for semiconductor manufacturing apparatus
US11081345B2 (en) 2018-02-06 2021-08-03 Asm Ip Holding B.V. Method of post-deposition treatment for silicon oxide film
US10896820B2 (en) 2018-02-14 2021-01-19 Asm Ip Holding B.V. Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process
JP7124098B2 (en) 2018-02-14 2022-08-23 エーエスエム・アイピー・ホールディング・ベー・フェー Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process
US10731249B2 (en) 2018-02-15 2020-08-04 Asm Ip Holding B.V. Method of forming a transition metal containing film on a substrate by a cyclical deposition process, a method for supplying a transition metal halide compound to a reaction chamber, and related vapor deposition apparatus
US10658181B2 (en) 2018-02-20 2020-05-19 Asm Ip Holding B.V. Method of spacer-defined direct patterning in semiconductor fabrication
KR102636427B1 (en) 2018-02-20 2024-02-13 에이에스엠 아이피 홀딩 비.브이. Substrate processing method and apparatus
US10975470B2 (en) 2018-02-23 2021-04-13 Asm Ip Holding B.V. Apparatus for detecting or monitoring for a chemical precursor in a high temperature environment
US11473195B2 (en) 2018-03-01 2022-10-18 Asm Ip Holding B.V. Semiconductor processing apparatus and a method for processing a substrate
WO2019172274A1 (en) * 2018-03-06 2019-09-12 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ Processing device, exhaust system, and semiconductor device manufacturing method
US11629406B2 (en) 2018-03-09 2023-04-18 Asm Ip Holding B.V. Semiconductor processing apparatus comprising one or more pyrometers for measuring a temperature of a substrate during transfer of the substrate
US11114283B2 (en) 2018-03-16 2021-09-07 Asm Ip Holding B.V. Reactor, system including the reactor, and methods of manufacturing and using same
KR102646467B1 (en) 2018-03-27 2024-03-11 에이에스엠 아이피 홀딩 비.브이. Method of forming an electrode on a substrate and a semiconductor device structure including an electrode
US11088002B2 (en) 2018-03-29 2021-08-10 Asm Ip Holding B.V. Substrate rack and a substrate processing system and method
US10510536B2 (en) 2018-03-29 2019-12-17 Asm Ip Holding B.V. Method of depositing a co-doped polysilicon film on a surface of a substrate within a reaction chamber
US11230766B2 (en) 2018-03-29 2022-01-25 Asm Ip Holding B.V. Substrate processing apparatus and method
KR102501472B1 (en) 2018-03-30 2023-02-20 에이에스엠 아이피 홀딩 비.브이. Substrate processing method
US12025484B2 (en) 2018-05-08 2024-07-02 Asm Ip Holding B.V. Thin film forming method
TWI843623B (en) 2018-05-08 2024-05-21 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Methods for depositing an oxide film on a substrate by a cyclical deposition process and related device structures
KR20190129718A (en) 2018-05-11 2019-11-20 에이에스엠 아이피 홀딩 비.브이. Methods for forming a doped metal carbide film on a substrate and related semiconductor device structures
KR102596988B1 (en) 2018-05-28 2023-10-31 에이에스엠 아이피 홀딩 비.브이. Method of processing a substrate and a device manufactured by the same
US11718913B2 (en) 2018-06-04 2023-08-08 Asm Ip Holding B.V. Gas distribution system and reactor system including same
TWI840362B (en) 2018-06-04 2024-05-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Wafer handling chamber with moisture reduction
US11286562B2 (en) 2018-06-08 2022-03-29 Asm Ip Holding B.V. Gas-phase chemical reactor and method of using same
KR102568797B1 (en) 2018-06-21 2023-08-21 에이에스엠 아이피 홀딩 비.브이. Substrate processing system
US10797133B2 (en) 2018-06-21 2020-10-06 Asm Ip Holding B.V. Method for depositing a phosphorus doped silicon arsenide film and related semiconductor device structures
WO2020003000A1 (en) 2018-06-27 2020-01-02 Asm Ip Holding B.V. Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material
TW202409324A (en) 2018-06-27 2024-03-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Cyclic deposition processes for forming metal-containing material
KR102686758B1 (en) 2018-06-29 2024-07-18 에이에스엠 아이피 홀딩 비.브이. Method for depositing a thin film and manufacturing a semiconductor device
US10612136B2 (en) 2018-06-29 2020-04-07 ASM IP Holding, B.V. Temperature-controlled flange and reactor system including same
US10755922B2 (en) 2018-07-03 2020-08-25 Asm Ip Holding B.V. Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
US10388513B1 (en) 2018-07-03 2019-08-20 Asm Ip Holding B.V. Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
US10767789B2 (en) 2018-07-16 2020-09-08 Asm Ip Holding B.V. Diaphragm valves, valve components, and methods for forming valve components
US10483099B1 (en) 2018-07-26 2019-11-19 Asm Ip Holding B.V. Method for forming thermally stable organosilicon polymer film
US11053591B2 (en) 2018-08-06 2021-07-06 Asm Ip Holding B.V. Multi-port gas injection system and reactor system including same
US10883175B2 (en) 2018-08-09 2021-01-05 Asm Ip Holding B.V. Vertical furnace for processing substrates and a liner for use therein
US10829852B2 (en) 2018-08-16 2020-11-10 Asm Ip Holding B.V. Gas distribution device for a wafer processing apparatus
US11430674B2 (en) 2018-08-22 2022-08-30 Asm Ip Holding B.V. Sensor array, apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods
KR102707956B1 (en) 2018-09-11 2024-09-19 에이에스엠 아이피 홀딩 비.브이. Method for deposition of a thin film
US11024523B2 (en) 2018-09-11 2021-06-01 Asm Ip Holding B.V. Substrate processing apparatus and method
US11049751B2 (en) 2018-09-14 2021-06-29 Asm Ip Holding B.V. Cassette supply system to store and handle cassettes and processing apparatus equipped therewith
TWI844567B (en) 2018-10-01 2024-06-11 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Substrate retaining apparatus, system including the apparatus, and method of using same
US11232963B2 (en) 2018-10-03 2022-01-25 Asm Ip Holding B.V. Substrate processing apparatus and method
KR102592699B1 (en) 2018-10-08 2023-10-23 에이에스엠 아이피 홀딩 비.브이. Substrate support unit and apparatuses for depositing thin film and processing the substrate including the same
US10847365B2 (en) 2018-10-11 2020-11-24 Asm Ip Holding B.V. Method of forming conformal silicon carbide film by cyclic CVD
US10811256B2 (en) 2018-10-16 2020-10-20 Asm Ip Holding B.V. Method for etching a carbon-containing feature
KR102605121B1 (en) 2018-10-19 2023-11-23 에이에스엠 아이피 홀딩 비.브이. Substrate processing apparatus and substrate processing method
KR102546322B1 (en) 2018-10-19 2023-06-21 에이에스엠 아이피 홀딩 비.브이. Substrate processing apparatus and substrate processing method
USD948463S1 (en) 2018-10-24 2022-04-12 Asm Ip Holding B.V. Susceptor for semiconductor substrate supporting apparatus
US10381219B1 (en) 2018-10-25 2019-08-13 Asm Ip Holding B.V. Methods for forming a silicon nitride film
US11087997B2 (en) 2018-10-31 2021-08-10 Asm Ip Holding B.V. Substrate processing apparatus for processing substrates
KR20200051105A (en) 2018-11-02 2020-05-13 에이에스엠 아이피 홀딩 비.브이. Substrate support unit and substrate processing apparatus including the same
US11572620B2 (en) 2018-11-06 2023-02-07 Asm Ip Holding B.V. Methods for selectively depositing an amorphous silicon film on a substrate
US11031242B2 (en) 2018-11-07 2021-06-08 Asm Ip Holding B.V. Methods for depositing a boron doped silicon germanium film
US10818758B2 (en) 2018-11-16 2020-10-27 Asm Ip Holding B.V. Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures
US10847366B2 (en) 2018-11-16 2020-11-24 Asm Ip Holding B.V. Methods for depositing a transition metal chalcogenide film on a substrate by a cyclical deposition process
US10559458B1 (en) 2018-11-26 2020-02-11 Asm Ip Holding B.V. Method of forming oxynitride film
US12040199B2 (en) 2018-11-28 2024-07-16 Asm Ip Holding B.V. Substrate processing apparatus for processing substrates
US11217444B2 (en) 2018-11-30 2022-01-04 Asm Ip Holding B.V. Method for forming an ultraviolet radiation responsive metal oxide-containing film
KR102636428B1 (en) 2018-12-04 2024-02-13 에이에스엠 아이피 홀딩 비.브이. A method for cleaning a substrate processing apparatus
US11158513B2 (en) 2018-12-13 2021-10-26 Asm Ip Holding B.V. Methods for forming a rhenium-containing film on a substrate by a cyclical deposition process and related semiconductor device structures
JP7504584B2 (en) 2018-12-14 2024-06-24 エーエスエム・アイピー・ホールディング・ベー・フェー Method and system for forming device structures using selective deposition of gallium nitride - Patents.com
JP7105751B2 (en) 2019-01-10 2022-07-25 東京エレクトロン株式会社 processing equipment
TWI819180B (en) 2019-01-17 2023-10-21 荷蘭商Ａｓｍ 智慧財產控股公司 Methods of forming a transition metal containing film on a substrate by a cyclical deposition process
KR20200091543A (en) 2019-01-22 2020-07-31 에이에스엠 아이피 홀딩 비.브이. Semiconductor processing device
CN111524788B (en) 2019-02-01 2023-11-24 Asm Ip私人控股有限公司 Method for topologically selective film formation of silicon oxide
JP2020136678A (en) 2019-02-20 2020-08-31 エーエスエム・アイピー・ホールディング・ベー・フェー Method for filing concave part formed inside front surface of base material, and device
TWI845607B (en) 2019-02-20 2024-06-21 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Cyclical deposition method and apparatus for filling a recess formed within a substrate surface
KR102626263B1 (en) 2019-02-20 2024-01-16 에이에스엠 아이피 홀딩 비.브이. Cyclical deposition method including treatment step and apparatus for same
KR20200102357A (en) 2019-02-20 2020-08-31 에이에스엠 아이피 홀딩 비.브이. Apparatus and methods for plug fill deposition in 3-d nand applications
TWI842826B (en) 2019-02-22 2024-05-21 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Substrate processing apparatus and method for processing substrate
KR20200108242A (en) 2019-03-08 2020-09-17 에이에스엠 아이피 홀딩 비.브이. Method for Selective Deposition of Silicon Nitride Layer and Structure Including Selectively-Deposited Silicon Nitride Layer
KR20200108243A (en) 2019-03-08 2020-09-17 에이에스엠 아이피 홀딩 비.브이. Structure Including SiOC Layer and Method of Forming Same
US11742198B2 (en) 2019-03-08 2023-08-29 Asm Ip Holding B.V. Structure including SiOCN layer and method of forming same
JP6616917B2 (en) * 2019-03-27 2019-12-04 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ Substrate processing apparatus, semiconductor device manufacturing method, and recording medium
JP6591711B2 (en) * 2019-03-27 2019-10-16 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ Substrate processing apparatus, semiconductor device manufacturing method, and recording medium
JP6625256B2 (en) * 2019-03-27 2019-12-25 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ Substrate processing apparatus, semiconductor device manufacturing method, and recording medium
JP6591710B2 (en) * 2019-03-27 2019-10-16 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ Substrate processing apparatus, semiconductor device manufacturing method, and recording medium
JP6591712B2 (en) * 2019-03-27 2019-10-16 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ Substrate processing apparatus, semiconductor device manufacturing method, and recording medium
KR20200116033A (en) 2019-03-28 2020-10-08 에이에스엠 아이피 홀딩 비.브이. Door opener and substrate processing apparatus provided therewith
KR20200116855A (en) 2019-04-01 2020-10-13 에이에스엠 아이피 홀딩 비.브이. Method of manufacturing semiconductor device
KR20200123380A (en) 2019-04-19 2020-10-29 에이에스엠 아이피 홀딩 비.브이. Layer forming method and apparatus
KR20200125453A (en) 2019-04-24 2020-11-04 에이에스엠 아이피 홀딩 비.브이. Gas-phase reactor system and method of using same
KR20200130118A (en) 2019-05-07 2020-11-18 에이에스엠 아이피 홀딩 비.브이. Method for Reforming Amorphous Carbon Polymer Film
KR20200130121A (en) 2019-05-07 2020-11-18 에이에스엠 아이피 홀딩 비.브이. Chemical source vessel with dip tube
KR20200130652A (en) 2019-05-10 2020-11-19 에이에스엠 아이피 홀딩 비.브이. Method of depositing material onto a surface and structure formed according to the method
JP2020188254A (en) 2019-05-16 2020-11-19 エーエスエム アイピー ホールディング ビー．ブイ． Wafer boat handling device, vertical batch furnace, and method
JP2020188255A (en) 2019-05-16 2020-11-19 エーエスエム アイピー ホールディング ビー．ブイ． Wafer boat handling device, vertical batch furnace, and method
USD975665S1 (en) 2019-05-17 2023-01-17 Asm Ip Holding B.V. Susceptor shaft
USD947913S1 (en) 2019-05-17 2022-04-05 Asm Ip Holding B.V. Susceptor shaft
USD935572S1 (en) 2019-05-24 2021-11-09 Asm Ip Holding B.V. Gas channel plate
USD922229S1 (en) 2019-06-05 2021-06-15 Asm Ip Holding B.V. Device for controlling a temperature of a gas supply unit
KR20200141003A (en) 2019-06-06 2020-12-17 에이에스엠 아이피 홀딩 비.브이. Gas-phase reactor system including a gas detector
KR20200143254A (en) 2019-06-11 2020-12-23 에이에스엠 아이피 홀딩 비.브이. Method of forming an electronic structure using an reforming gas, system for performing the method, and structure formed using the method
USD944946S1 (en) 2019-06-14 2022-03-01 Asm Ip Holding B.V. Shower plate
USD931978S1 (en) 2019-06-27 2021-09-28 Asm Ip Holding B.V. Showerhead vacuum transport
KR20210005515A (en) 2019-07-03 2021-01-14 에이에스엠 아이피 홀딩 비.브이. Temperature control assembly for substrate processing apparatus and method of using same
JP7499079B2 (en) 2019-07-09 2024-06-13 エーエスエム・アイピー・ホールディング・ベー・フェー Plasma device using coaxial waveguide and substrate processing method
CN112216646A (en) 2019-07-10 2021-01-12 Asm Ip私人控股有限公司 Substrate supporting assembly and substrate processing device comprising same
KR20210010307A (en) 2019-07-16 2021-01-27 에이에스엠 아이피 홀딩 비.브이. Substrate processing apparatus
KR20210010816A (en) 2019-07-17 2021-01-28 에이에스엠 아이피 홀딩 비.브이. Radical assist ignition plasma system and method
KR20210010820A (en) 2019-07-17 2021-01-28 에이에스엠 아이피 홀딩 비.브이. Methods of forming silicon germanium structures
US11643724B2 (en) 2019-07-18 2023-05-09 Asm Ip Holding B.V. Method of forming structures using a neutral beam
TWI839544B (en) 2019-07-19 2024-04-21 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Method of forming topology-controlled amorphous carbon polymer film
KR20210010817A (en) 2019-07-19 2021-01-28 에이에스엠 아이피 홀딩 비.브이. Method of Forming Topology-Controlled Amorphous Carbon Polymer Film
CN112309843A (en) 2019-07-29 2021-02-02 Asm Ip私人控股有限公司 Selective deposition method for achieving high dopant doping
CN112309900A (en) 2019-07-30 2021-02-02 Asm Ip私人控股有限公司 Substrate processing apparatus
CN112309899A (en) 2019-07-30 2021-02-02 Asm Ip私人控股有限公司 Substrate processing apparatus
US11587815B2 (en) 2019-07-31 2023-02-21 Asm Ip Holding B.V. Vertical batch furnace assembly
US11587814B2 (en) 2019-07-31 2023-02-21 Asm Ip Holding B.V. Vertical batch furnace assembly
US11227782B2 (en) 2019-07-31 2022-01-18 Asm Ip Holding B.V. Vertical batch furnace assembly
CN118422165A (en) 2019-08-05 2024-08-02 Asm Ip私人控股有限公司 Liquid level sensor for chemical source container
USD965524S1 (en) 2019-08-19 2022-10-04 Asm Ip Holding B.V. Susceptor support
USD965044S1 (en) 2019-08-19 2022-09-27 Asm Ip Holding B.V. Susceptor shaft
JP2021031769A (en) 2019-08-21 2021-03-01 エーエスエム アイピー ホールディング ビー．ブイ． Production apparatus of mixed gas of film deposition raw material and film deposition apparatus
USD979506S1 (en) 2019-08-22 2023-02-28 Asm Ip Holding B.V. Insulator
KR20210024423A (en) 2019-08-22 2021-03-05 에이에스엠 아이피 홀딩 비.브이. Method for forming a structure with a hole
USD930782S1 (en) 2019-08-22 2021-09-14 Asm Ip Holding B.V. Gas distributor
USD940837S1 (en) 2019-08-22 2022-01-11 Asm Ip Holding B.V. Electrode
USD949319S1 (en) 2019-08-22 2022-04-19 Asm Ip Holding B.V. Exhaust duct
KR20210024420A (en) 2019-08-23 2021-03-05 에이에스엠 아이피 홀딩 비.브이. Method for depositing silicon oxide film having improved quality by peald using bis(diethylamino)silane
US11286558B2 (en) 2019-08-23 2022-03-29 Asm Ip Holding B.V. Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film
KR20210029090A (en) 2019-09-04 2021-03-15 에이에스엠 아이피 홀딩 비.브이. Methods for selective deposition using a sacrificial capping layer
KR20210029663A (en) 2019-09-05 2021-03-16 에이에스엠 아이피 홀딩 비.브이. Substrate processing apparatus
US11562901B2 (en) 2019-09-25 2023-01-24 Asm Ip Holding B.V. Substrate processing method
CN112593212B (en) 2019-10-02 2023-12-22 Asm Ip私人控股有限公司 Method for forming topologically selective silicon oxide film by cyclic plasma enhanced deposition process
KR20210042810A (en) 2019-10-08 2021-04-20 에이에스엠 아이피 홀딩 비.브이. Reactor system including a gas distribution assembly for use with activated species and method of using same
TWI846953B (en) 2019-10-08 2024-07-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Substrate processing device
KR20210043460A (en) 2019-10-10 2021-04-21 에이에스엠 아이피 홀딩 비.브이. Method of forming a photoresist underlayer and structure including same
US12009241B2 (en) 2019-10-14 2024-06-11 Asm Ip Holding B.V. Vertical batch furnace assembly with detector to detect cassette
TWI834919B (en) 2019-10-16 2024-03-11 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Method of topology-selective film formation of silicon oxide
US11637014B2 (en) 2019-10-17 2023-04-25 Asm Ip Holding B.V. Methods for selective deposition of doped semiconductor material
KR20210047808A (en) 2019-10-21 2021-04-30 에이에스엠 아이피 홀딩 비.브이. Apparatus and methods for selectively etching films
KR20210050453A (en) 2019-10-25 2021-05-07 에이에스엠 아이피 홀딩 비.브이. Methods for filling a gap feature on a substrate surface and related semiconductor structures
US11646205B2 (en) 2019-10-29 2023-05-09 Asm Ip Holding B.V. Methods of selectively forming n-type doped material on a surface, systems for selectively forming n-type doped material, and structures formed using same
KR20210054983A (en) 2019-11-05 2021-05-14 에이에스엠 아이피 홀딩 비.브이. Structures with doped semiconductor layers and methods and systems for forming same
US11501968B2 (en) 2019-11-15 2022-11-15 Asm Ip Holding B.V. Method for providing a semiconductor device with silicon filled gaps
KR20210062561A (en) 2019-11-20 2021-05-31 에이에스엠 아이피 홀딩 비.브이. Method of depositing carbon-containing material on a surface of a substrate, structure formed using the method, and system for forming the structure
KR20210065848A (en) 2019-11-26 2021-06-04 에이에스엠 아이피 홀딩 비.브이. Methods for selectivley forming a target film on a substrate comprising a first dielectric surface and a second metallic surface
CN112951697A (en) 2019-11-26 2021-06-11 Asm Ip私人控股有限公司 Substrate processing apparatus
CN112885693A (en) 2019-11-29 2021-06-01 Asm Ip私人控股有限公司 Substrate processing apparatus
CN112885692A (en) 2019-11-29 2021-06-01 Asm Ip私人控股有限公司 Substrate processing apparatus
JP7527928B2 (en) 2019-12-02 2024-08-05 エーエスエム・アイピー・ホールディング・ベー・フェー Substrate processing apparatus and substrate processing method
KR20210070898A (en) 2019-12-04 2021-06-15 에이에스엠 아이피 홀딩 비.브이. Substrate processing apparatus
TW202125596A (en) 2019-12-17 2021-07-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Method of forming vanadium nitride layer and structure including the vanadium nitride layer
US11527403B2 (en) 2019-12-19 2022-12-13 Asm Ip Holding B.V. Methods for filling a gap feature on a substrate surface and related semiconductor structures
KR20210089079A (en) 2020-01-06 2021-07-15 에이에스엠 아이피 홀딩 비.브이. Channeled lift pin
TW202140135A (en) 2020-01-06 2021-11-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Gas supply assembly and valve plate assembly
US11993847B2 (en) 2020-01-08 2024-05-28 Asm Ip Holding B.V. Injector
KR102675856B1 (en) 2020-01-20 2024-06-17 에이에스엠 아이피 홀딩 비.브이. Method of forming thin film and method of modifying surface of thin film
TW202130846A (en) 2020-02-03 2021-08-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Method of forming structures including a vanadium or indium layer
TW202146882A (en) 2020-02-04 2021-12-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Method of verifying an article, apparatus for verifying an article, and system for verifying a reaction chamber
US11776846B2 (en) 2020-02-07 2023-10-03 Asm Ip Holding B.V. Methods for depositing gap filling fluids and related systems and devices
US11781243B2 (en) 2020-02-17 2023-10-10 Asm Ip Holding B.V. Method for depositing low temperature phosphorous-doped silicon
TW202203344A (en) 2020-02-28 2022-01-16 荷蘭商Ａｓｍ Ｉｐ控股公司 System dedicated for parts cleaning
KR20210116249A (en) 2020-03-11 2021-09-27 에이에스엠 아이피 홀딩 비.브이. lockout tagout assembly and system and method of using same
KR20210116240A (en) 2020-03-11 2021-09-27 에이에스엠 아이피 홀딩 비.브이. Substrate handling device with adjustable joints
CN113394086A (en) 2020-03-12 2021-09-14 Asm Ip私人控股有限公司 Method for producing a layer structure having a target topological profile
KR20210124042A (en) 2020-04-02 2021-10-14 에이에스엠 아이피 홀딩 비.브이. Thin film forming method
TW202146689A (en) 2020-04-03 2021-12-16 荷蘭商Ａｓｍ Ｉｐ控股公司 Method for forming barrier layer and method for manufacturing semiconductor device
TW202145344A (en) 2020-04-08 2021-12-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Apparatus and methods for selectively etching silcon oxide films
KR20210128343A (en) 2020-04-15 2021-10-26 에이에스엠 아이피 홀딩 비.브이. Method of forming chromium nitride layer and structure including the chromium nitride layer
US11821078B2 (en) 2020-04-15 2023-11-21 Asm Ip Holding B.V. Method for forming precoat film and method for forming silicon-containing film
US11996289B2 (en) 2020-04-16 2024-05-28 Asm Ip Holding B.V. Methods of forming structures including silicon germanium and silicon layers, devices formed using the methods, and systems for performing the methods
KR20210132600A (en) 2020-04-24 2021-11-04 에이에스엠 아이피 홀딩 비.브이. Methods and systems for depositing a layer comprising vanadium, nitrogen, and a further element
TW202146831A (en) 2020-04-24 2021-12-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Vertical batch furnace assembly, and method for cooling vertical batch furnace
JP2021172884A (en) 2020-04-24 2021-11-01 エーエスエム・アイピー・ホールディング・ベー・フェー Method of forming vanadium nitride-containing layer and structure comprising vanadium nitride-containing layer
KR20210134226A (en) 2020-04-29 2021-11-09 에이에스엠 아이피 홀딩 비.브이. Solid source precursor vessel
KR20210134869A (en) 2020-05-01 2021-11-11 에이에스엠 아이피 홀딩 비.브이. Fast FOUP swapping with a FOUP handler
KR20210141379A (en) 2020-05-13 2021-11-23 에이에스엠 아이피 홀딩 비.브이. Laser alignment fixture for a reactor system
TW202146699A (en) 2020-05-15 2021-12-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Method of forming a silicon germanium layer, semiconductor structure, semiconductor device, method of forming a deposition layer, and deposition system
KR20210143653A (en) 2020-05-19 2021-11-29 에이에스엠 아이피 홀딩 비.브이. Substrate processing apparatus
KR20210145078A (en) 2020-05-21 2021-12-01 에이에스엠 아이피 홀딩 비.브이. Structures including multiple carbon layers and methods of forming and using same
KR102702526B1 (en) 2020-05-22 2024-09-03 에이에스엠 아이피 홀딩 비.브이. Apparatus for depositing thin films using hydrogen peroxide
TW202201602A (en) 2020-05-29 2022-01-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Substrate processing device
TW202212620A (en) 2020-06-02 2022-04-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Apparatus for processing substrate, method of forming film, and method of controlling apparatus for processing substrate
TW202218133A (en) 2020-06-24 2022-05-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Method for forming a layer provided with silicon
TW202217953A (en) 2020-06-30 2022-05-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Substrate processing method
KR102707957B1 (en) 2020-07-08 2024-09-19 에이에스엠 아이피 홀딩 비.브이. Method for processing a substrate
TW202219628A (en) 2020-07-17 2022-05-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Structures and methods for use in photolithography
TW202204662A (en) 2020-07-20 2022-02-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Method and system for depositing molybdenum layers
US12040177B2 (en) 2020-08-18 2024-07-16 Asm Ip Holding B.V. Methods for forming a laminate film by cyclical plasma-enhanced deposition processes
KR20220027026A (en) 2020-08-26 2022-03-07 에이에스엠 아이피 홀딩 비.브이. Method and system for forming metal silicon oxide and metal silicon oxynitride
TW202229601A (en) 2020-08-27 2022-08-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Method of forming patterned structures, method of manipulating mechanical property, device structure, and substrate processing system
USD990534S1 (en) 2020-09-11 2023-06-27 Asm Ip Holding B.V. Weighted lift pin
USD1012873S1 (en) 2020-09-24 2024-01-30 Asm Ip Holding B.V. Electrode for semiconductor processing apparatus
US12009224B2 (en) 2020-09-29 2024-06-11 Asm Ip Holding B.V. Apparatus and method for etching metal nitrides
KR20220045900A (en) 2020-10-06 2022-04-13 에이에스엠 아이피 홀딩 비.브이. Deposition method and an apparatus for depositing a silicon-containing material
CN114293174A (en) 2020-10-07 2022-04-08 Asm Ip私人控股有限公司 Gas supply unit and substrate processing apparatus including the same
TW202229613A (en) 2020-10-14 2022-08-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Method of depositing material on stepped structure
KR20220053482A (en) 2020-10-22 2022-04-29 에이에스엠 아이피 홀딩 비.브이. Method of depositing vanadium metal, structure, device and a deposition assembly
TW202223136A (en) 2020-10-28 2022-06-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Method for forming layer on substrate, and semiconductor processing system
TW202235649A (en) 2020-11-24 2022-09-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Methods for filling a gap and related systems and devices
TW202235675A (en) 2020-11-30 2022-09-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Injector, and substrate processing apparatus
US11946137B2 (en) 2020-12-16 2024-04-02 Asm Ip Holding B.V. Runout and wobble measurement fixtures
TW202231903A (en) 2020-12-22 2022-08-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Transition metal deposition method, transition metal layer, and deposition assembly for depositing transition metal on substrate
CN113130288A (en) * 2021-03-23 2021-07-16 苏州华亚智能科技股份有限公司 Air box shell and processing technology thereof
USD981973S1 (en) 2021-05-11 2023-03-28 Asm Ip Holding B.V. Reactor wall for substrate processing apparatus
USD980813S1 (en) 2021-05-11 2023-03-14 Asm Ip Holding B.V. Gas flow control plate for substrate processing apparatus
USD980814S1 (en) 2021-05-11 2023-03-14 Asm Ip Holding B.V. Gas distributor for substrate processing apparatus
USD990441S1 (en) 2021-09-07 2023-06-27 Asm Ip Holding B.V. Gas flow control plate

Also Published As

Publication number Publication date
JP2002170781A (en) 2002-06-14

Similar Documents

Publication Publication Date Title
JP3610900B2 (en) Heat treatment equipment
TWI717034B (en) Side storage pod, electronic device processing systems, and methods of processing substrates
US6899507B2 (en) Semiconductor processing apparatus comprising chamber partitioned into reaction and transfer sections
JP2014093489A (en) Substrate processing device
WO2019177045A1 (en) Efem
US11302542B2 (en) Processing apparatus
JP5030410B2 (en) Vacuum processing equipment
JP5144207B2 (en) Substrate processing apparatus and semiconductor device manufacturing method
WO2014050464A1 (en) Substrate processing apparatus, substrate processing method, and semiconductor device manufacturing method
JP2002175999A (en) Substrate processor
US20090269937A1 (en) Substrate processing apparatus and method of manufacturing semiconductor device
TWI824093B (en) Processing device (1)
JPH11340301A (en) Equipment and method for processing substrate
JPH11204449A (en) Vertical heat treatment system
TWI821138B (en) Equipment front-end module (EFEM)
JPH07193115A (en) Vacuum processing apparatus
JP4502411B2 (en) Substrate processing equipment
KR20130109680A (en) Cluster apparatus for processing a substrate
JPH07283288A (en) Processing device
JP2014067797A (en) Substrate processing apparatus, substrate processing method and semiconductor device manufacturing method
JP4000174B2 (en) Processing system
JP2012114456A (en) Transfer vessel
JP2011044633A (en) Substrate processing apparatus
JPH1097962A (en) Treating device and treating system
JPH0888155A (en) Interface box in local cleaning and clean room therefor

Legal Events

Date Code Title Description
A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20040727

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20040819

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20040928

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20041011

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

Ref document number: 3610900

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20071029

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20101029

Year of fee payment: 6

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20101029

Year of fee payment: 6

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20131029

Year of fee payment: 9

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees