JP4783306B2 - 発光素子を備えた光源 - Google Patents

発光素子を備えた光源 Download PDF

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Publication number
JP4783306B2
JP4783306B2 JP2007023598A JP2007023598A JP4783306B2 JP 4783306 B2 JP4783306 B2 JP 4783306B2 JP 2007023598 A JP2007023598 A JP 2007023598A JP 2007023598 A JP2007023598 A JP 2007023598A JP 4783306 B2 JP4783306 B2 JP 4783306B2
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Prior art keywords
light source
phosphor
light
source according
led
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JP2007023598A
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JP2007189239A5 (ja
JP2007189239A (ja
Inventor
タッシュ、シュテファン
パハラー、ペーター
ロート、グンドゥラ
テウス、ヴァルター
ケンプフェルト、ヴォルフガング
シュタリック、デトレフ
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Toyoda Gosei Co Ltd
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Toyoda Gosei Co Ltd
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
    • C09K11/7783—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing two or more rare earth metals one of which being europium
    • C09K11/7795—Phosphates
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • C—CHEMISTRY; METALLURGY
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    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
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    • C09K11/7734—Aluminates
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    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
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    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
    • H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B20/00—Energy efficient lighting technologies, e.g. halogen lamps or gas discharge lamps

Description

本発明は、発光素子と、蛍光体とを備え、発光素子が第１のスペクトル範囲、特に光スペクトルの青色および／または紫外線範囲で発光し、蛍光体がアルカリ土類金属オルト珪酸塩（Ｅｒｄａｌｋａｌｉｏｒｔｈｏｓｉｌｉｋａｔｅ）の群に由来するか又はこの発光物質群の少なくとも１つの成分を含み、発光素子の発光の一部を吸収し、別のスペクトル範囲、特に黄緑色、黄色又はオレンジ色の範囲で発光する光源に関する。選択された蛍光体はこの群の他の蛍光体および／またはこの群に属していない別の発光物質と混合されて使用される。
発光素子は特に無機ＬＥＤであるが、有機ＬＥＤ、レーザーダイオード、無機厚膜エレクトロルミネセンスシートまたは無機薄膜エレクトロルミネセンス部品であってもよい。
無機ＬＥＤはとりわけ、長寿命、省スペース、耐震性、さらにスペクトル狭帯域での発光という点で優れている。
多数の発光色、特にスペクトル広帯域の多数の発光色は、ＬＥＤ内の活性半導体材料の内部発光によって実現できないか又は非効率にしか実現することができない。とりわけこのことは白色光を得る場合にあてはまる。
従来の技術によれば、半導体を用いて内部で実現することができない発光色は色変換によって得られる。
この色変換の技術は主として、少なくとも１つの蛍光体をＬＥＤダイ上に配置する原理に基づいている。その蛍光体は、このダイから発光された放射の一部を吸収し、ホトルミネセンスへ励起される。光源の発光色すなわち光色はダイの伝送された放射と発光物質の発光された放射との混合によって生じる。
蛍光体としては基本的に有機系ならびに無機系を使用することもできる。無機顔料の主要な利点は有機系に比べて高い化学的な温度および放射安定性にある。無機ＬＥＤの長寿命に関連して、長寿命の無機蛍光体は２つの構成要素から構成される光源の高い色位置安定性を保証する。
青色発光ＬＥＤから放出された放射が白色光に変換されるべき場合、青色光（４５０〜４９０ｎｍ）を有効に吸収し高効率で大部分黄色のルミネセンス放射に変換する発光物質が必要とされる。当然、少数の無機蛍光体しかこの要求を満たすことができない。現時点では多くの場合、ＹＡＧ発光物質クラスの材料が青色ＬＥＤに対する色変換顔料として使用されている（国際公開第９８／０５０７８号、第９８／１２７５７号パンフレット参照）。しかしながら、この材料には、該材料が５６０ｎｍ以下の発光最大値の場合にしか充分に高い効率を示さないという欠点がある。このような理由から青色ダイオード（４５０〜４９０ｎｍ）と組み合わされたＹＡＧ顔料を用いて、６０００〜８０００Ｋの色温度および比較的低い演色（演色評価数Ｒａの標準的な値は７０〜７５である）を有する冷たい感じの白色の光色のみを実現することができる。これにより用途範囲が非常に強く制限される。一方では、全般照明に白色光源を適用すると通常は照明手段の演色に高い要求が出され、他方では、とりわけ欧州および北米における顧客からは２７００〜５０００Ｋの色温度を持つ温かい光色が好まれている。
さらに国際公開第００／３３３８９号パンフレットから、青色ＬＥＤの光を変換するための蛍光体としてとりわけＢａ２ＳｉＯ４：Ｅｕ２＋を使用することが公知である。発光物質Ｂａ２ＳｉＯ４：Ｅｕ２＋の発光最大値は５０５ｎｍにあり、それゆえこのような組合わせを用いると確実に白色光を発生することができない。
Ｓ．Ｈ．Ｍ． Ｐｏｏｒｔ等による論文、“Ｏｐｔｉｃａｌ ｐｒｏｐｅｒｔｉｅｓ ｏｆ Ｅｕ２＋−ａｋｔｉｖａｔｅｄ ｏｒｔｈｏｓｉｌｉｃａｔｅｓ ａｎｄ ｏｒｔｈｏｐｈｏｓｐａｔｅｓ”（刊行物「Ｊｏｒｎａｌ ｏｆ Ａｌｌｏｙｓ ａｎｄ Ｃｏｍｐｏｕｎｄｓ 」２６０巻、１９９７年発行、第９３〜９７頁）では、Ｅｕで活性化されたＢａ２ＳｉＯ４ならびにリン酸塩（例えばＫＢａＰＯ４、ＫＳｒＰＯ４）の性質が研究されている。また同文献では、Ｂａ２ＳｉＯ４の発光が５０５ｎｍにあることが確認されている。
国際公開第００／３３３８９号パンフレット
本発明の課題は、冒頭に記載した種類の光源を、高い効率および高い演色を同時に得ると共に高温の色温度を持つ白光色、特に国際照明委員会（ＣＩＥ）から全般照明用に決定された公差楕円内に位置する色位置を発生できるように変更することにある。
本発明は、上記課題を解決するための、
４４０〜４７５ｎｍの波長の青色光を出射するためのＬＥＤ素子と、
前記ＬＥＤ素子の発光の一部を吸収し、別のスペクトル範囲で発光する蛍光体と、を含む白色を発生する光源において、
前記蛍光体は、組成Ａ：
（２−ｘ−ｙ）ＳｒＯ・ｘ（Ｂａｕ，Ｃａｖ）Ｏ・（１−ａ−ｂ−ｃ−ｄ）ＳｉＯ２・ａ
Ｐ２Ｏ５ ｂＡｌ２Ｏ３ ｃＢ２Ｏ３ ｄＧｅＯ２：ｙＥｕ２＋
（但し、０＜ｘ＜１．６
０．００５＜ｙ＜０．５
ｘ＋ｙ≦１．６
０≦ａ、ｂ、ｃ、ｄ＜０．５
ｕ＋ｖ＝１である）
または組成Ｂ：
（２−ｘ−ｙ）ＢａＯ・ｘ（Ｓｒｕ，Ｃａｖ）Ｏ・（１−ａ−ｂ−ｃ−ｄ）ＳｉＯ２・ａ
Ｐ２Ｏ５ ｂＡｌ２Ｏ３ ｃＢ２Ｏ３ ｄＧｅＯ２：ｙＥｕ２＋
（但し、０．０１＜ｘ＜１．６
０．００５＜ｙ＜０．５
０≦ａ、ｂ、ｃ、ｄ＜０．５
ｕ＋ｖ＝１
ｘ×ｕ≧０．４である）
で示される２価のユウロピウムで活性化されたアルカリ土類金属オルト珪酸塩であり、ｘ
、ｙ、ｕ、ｖ、ａ、ｂ、ｃ及びｄの各パラメータに依存して黄緑色、黄色又はオレンジ色
の範囲で発光し、
発生される白色の色温度及び演色評価数が、黄緑色、黄色又はオレンジ色の範囲におけ
る前記各パラメータの選択により調整されることを特徴とする光源を提供する。
良好な演色および高い光効率を有する白色光は、青色ＬＥＤと上述の組成を有しユウロピウムで活性化された本発明によるアルカリ土類金属オルト珪酸塩の群から選択された蛍光体との組合わせによって実現できることが見出された。純粋なバリウムオルト珪酸塩をベースにし青緑色光を放射する蛍光体に対して、バリウム−ストロンチウムオルト珪酸塩混合結晶によって黄緑色、黄色から黄オレンジ色までのルミネセンス光が発生され、カルシウムをオルト珪酸塩格子内へ組み込むことによって完全にオレンジ色のルミネセンス光が発生され、それゆえ青色ＬＥＤの伝送された光と選択された蛍光体の発光されたルミネセンス光との混合によって、高い演色および高い効率を有する白色光が発生される。オルト珪酸塩においてＢａをＳｒによって置換することによる発光色のシフトは、上述したＰｏｏｒｔ等の論文によって従来では硬いＵＶ放射（２５４ｎｍの励起）を用いた励起に対してのみ知られていた。それに対して、この作用が４４０〜４７５ｎｍの範囲の青色光を照射すると増強されて発生することは、その論文には記載されていない。Ｂａ−Ｓｒ−Ｃａオルト珪酸塩混合結晶および長波長のＵＶ放射または青色光で励起された際のその強い発光能力は従来では全く知られていなかった。
選択された蛍光体はこの群の他の蛍光体および／またはこの群に属していない付加的な発光物質と混合して使用することもできる。後者の発光物質には、２価のユウロピウムおよび／またはマンガンで活性化された例えば青色光を発するアルカリ土類金属アルミン酸塩、ならびにＹ（Ｖ，Ｐ，Ｓｉ）Ｏ４：Ｅｕ，Ｂｉ、Ｙ２Ｏ２Ｓ：Ｅｕ，Ｂｉまたは式Ｍｅ（３−ｘ−ｙ）ＭｇＳｉ２Ｏ８：ｘＥｕ，ｙＭｎ（但し、０．００５＜ｘ＜０．５、０．００５＜ｙ＜０．５、ＭｅはＢａ、Ｓｒ、Ｃａの少なくとも１つから成る）で示されるユウロピウムおよびマンガンで活性化されたアルカリ土類金属−マグネシウム−二珪酸塩：Ｅｕ２＋，Ｍｎ２＋の群から成る赤色光を発する蛍光体が属する。
以下において詳細に説明される実施例に示されているように、本発明による混合結晶性蛍光体のＳｒ成分は、白色光を発生し得るために、少なすぎてはならない。
Ｐ２Ｏ５、Ａｌ２Ｏ３および／またはＢ２Ｏ３をオルト珪酸塩格子内に付加的に組み込むこと、および珪素の一部をゲルマニウムによって置換することはそれぞれの蛍光体の発光スペクトルへの相当の影響を有し、それゆえこれはそれぞれの用途例のために有利にさらに変えることができることが見出された。Ｓｉ（ＩＶ）としての小さなイオンは一般的に長波長範囲側への発光最大値のシフトを惹き起し、一方大きなイオンは発光重心点を短波長側へシフトさせる。さらに、例えばハロゲン化物および／またはアルカリ金属イオンのような１価のイオンの少量が蛍光体格子内へ追加的に組み込まれることは、結晶化度、発光能力にとって、特に本発明による蛍光体の安定性にとって有利であることが判明している。
本発明の他の実施態様によれば、光源が少なくとも２つの異なる蛍光体を有し、少なくとも１つの蛍光体がアルカリ土類金属オルト珪酸塩発光物質である。このようにしてそれぞれの用途に要求された白の色調が特に正確に生じ、特に８０以上のＲａ値を達成できる。本発明の他の有利な実施態様は、スペクトルの紫外線範囲、例えば３７０ｎｍ〜３９０の範囲で発光するＬＥＤと、少なくとも１つの発光物質が本発明によるアルカリ土類金属オルト珪酸塩発光物質である少なくとも３つの発光物質との組合わせである。相応の発光物質混合物において、付加的な発光物質として、ユウロピウムおよび／またはマンガンで活性化され青色光を発するアルカリ土類金属アルミン酸塩、および／またはＹ（Ｖ，Ｐ，Ｓｉ）Ｏ４：Ｅｕ，Ｂｉ、Ｙ２Ｏ２Ｓ：Ｅｕ，Ｂｉの群またはユウロピウムおよびマンガンで活性化されたアルカリ土類金属−マグネシウム−二珪酸塩の群から成り赤色光を発する蛍光体を使用できる。
本発明による光源の機械的構成に対しては多数の可能性が存在する。１つの実施態様によれば、１つまたは複数のＬＥＤチップが反射鏡内のプリント板上に配置され、蛍光体が、反射鏡上に配置されている透光板内に分散されている。
しかし、１つまたは複数のＬＥＤチップが反射鏡内のプリント板上に配置され、蛍光体が反射鏡に被着されていることも可能である。
ＬＥＤチップがドーム状の形状を有する透明な注型材料で注型されていると有利である。一方ではこの注型材料は機械的な保護を形成し、他方では注型材料は光学的特性を改善する（ＬＥＤダイからの光出射の改善）。
蛍光体は注型材料中に分散されていてもよく、この注型材料によって、できるだけガスが閉込められることなしに、プリント板上に配置されたＬＥＤチップとポリマーレンズとが結合され、ポリマーレンズと注型材料とは最大で０．１だけ異なる屈折率を有する。この注型材料によってＬＥＤダイが直接閉じ込められていてもよいし、しかしながらＬＥＤダイが透明な注型材料で注型されている（すなわちその場合には透明な注型材料と蛍光体を含有する注型材料とが存在している）ことも可能である。屈折率が近似していることによって、境界面での反射による損失がほとんどない。
ポリマーレンズが球形もしくは楕円形の窪みを有し、この窪みが注型材料を充填され、ＬＥＤアレイがポリマーレンズから僅かな距離で固定されていると有利である。このようにして、機械的な構造の高さを減少させることができる。
蛍光体の均一な分布を達成するために、蛍光体が特に無機のマトリックス中に懸濁されていると有利である。
少なくとも２つの蛍光体を使用する場合、少なくとも２つの蛍光体が個々にマトリックス中に分散され、これらのマトリックスが光の伝搬方向に相前後して配置されていると有利である。これによって蛍光体の濃度は、異なる蛍光体を一様に分散させた場合に比べて減少させることができる。
次に、本発明の優れた実施態様における蛍光体を製造するための重要な工程を説明する。
アルカリ土類金属オルト珪酸塩蛍光体の製造のために、選択した組成に応じて、化学量論的な量の出発物質のアルカリ土類金属炭酸塩、二酸化珪素ならびに酸化ユウロピウムを完全に混合し、発光物質の製造にとって通常に行われている固体反応において還元性雰囲気下でかつ１１００℃〜１４００℃の温度で所望の蛍光体に変換する。この場合、結晶化度にとっては、反応混合物に少ない割合で、特に０．２モル未満の割合で塩化アンモニウムまたは他のハロゲン化物を添加すると有利である。本発明においては、珪素の一部をゲルマニウム、ホウ素、アルミニウム、リンで置換することもでき、このことは熱により酸化物に分解する上記元素の化合物の相応量の添加によって行なわれる。同様に、少量のアルカリ金属イオンをそれぞれの格子内へ組み込むことが達成される。
得られた本発明によるオルト珪酸塩蛍光体は、約５１０ｎｍ〜６００ｎｍの波長で発光し、１１０ｎｍまでの半値幅を有する。
反応パラメータの相応の形成および例えば１価のハロゲン化物および／またはアルカリ金属イオンの特定の添加によって、蛍光体を傷付けやすい機械的な粉砕プロセスを実施することなく、本発明による蛍光体の粒度分布がそれぞれの用途の要求に最適に整合する。このようにして、約２μｍ〜２０μｍの平均粒度を有する狭帯域および広帯域の粒度分布が生じる。
［図面の簡単な説明］
本発明の他の利点を以下において実施例および図面に基づいて詳細に説明する。
図１〜６は本発明による種々のＬＥＤ光源のスペクトル（波長に依存する相対強度）を示し、図７〜１０は本発明によるＬＥＤ光源の種々の実施例を示す。
［発明の最良の実施例］
図１は、４６４ｎｍの重心波長を有する第１のスペクトル範囲において発光する青色ＬＥＤと、５９６ｎｍの最大値を有する第２のスペクトル範囲において発光する組成（Ｓｒ１．４Ｃａ０．６ＳｉＯ４：Ｅｕ２＋）の本発明による蛍光体との組合わせによって形成されている２７００Ｋの色温度を有する白色ＬＥＤの発光スペクトルを示す。
４６４ｎｍで発光するＬＥＤと、本発明によるオルト珪酸塩蛍光体のそれぞれ１つとの組合わせの他の例が図２および図３に示されている。組成Ｓｒ１．９０Ｂａ０．０８Ｃａ０．０２ＳｉＯ４：Ｅｕ２＋を持ち黄色光を発する蛍光体が色変換のために使用されると、４１００Ｋの色温度を有する白光色が生じ、一方蛍光体Ｓｒ１．８４Ｂａ０．１６ＳｉＯ４：Ｅｕ２＋を使用すると例えば６５００Ｋの色温度を有する白色光源が製造される。
４６４ｎｍＬＥＤと、本発明による２つのオルト珪酸塩蛍光体との組合わせの標準的なスペクトルが図４に示されている。使用された発光物質は組成Ｓｒ１．４Ｃａ０．６ＳｉＯ４：Ｅｕ２＋およびＳｒ１．００Ｂａ１．００ＳｉＯ４：Ｅｕ２＋を有している。図４に示された具体的なスペクトルのために５０８８Ｋの色温度と８２の演色評価数Ｒａとが保たれている。当然、全ての色温度は蛍光体の選定された量比率に応じて約３５００Ｋ〜７５００Ｋの範囲で実現されており、本発明による２つのアルカリ土類金属オルト珪酸塩蛍光体から成るこの種の混合物の大きな利点はとりわけ８０以上のＲａ値が同時に得られることにある。
この一例が図５に示されている。図示されているスペクトルは、４６４ｎｍＬＥＤと、２つの蛍光体Ｓｒ１．６Ｃａ０．４Ｓｉ０．９８Ｇａ０．０２Ｏ４：Ｅｕ２＋およびＳｒ１．１０Ｂａ０．９０ＳｉＯ４：Ｅｕ２＋から成る混合物との組合わせを示し、５０００Ｋの色温度で８２のＲａ値を提供する。
発光素子として、３７０〜３９０ｎｍの最大値を有する第１のスペクトル範囲において発光するＵＶ−ＬＥＤが使用される場合、そのＬＥＤと、図４に示された本発明による蛍光体および同時に青緑色光を発するバリウム−マグネシウムアルミン酸塩発光物質：Ｅｕ，Ｍｎの特定の成分を含んでいる発光物質混合物との組合わせによって、９０以上のＲａ値が実現される。図６は６５００Ｋの色温度で９１のＲａを有する白色光源の発光スペクトルを示す。
他の例は次の一覧表に記載されている。使用された無機ＬＥＤの発光波長および本発明による蛍光体のそれぞれの組成のほかに、生じた色温度およびＲａ値ならびに光源の色位置が示されている。
Ｔ＝２７７８Ｋ（４６４ｎｍ＋Ｓｒ１．４Ｃａ０．６ＳｉＯ４：Ｅｕ２＋）；
ｘ＝０．４６１９、ｙ＝０．４２４７、Ｒａ＝７２、
Ｔ＝２９５０Ｋ（４６４ｎｍ＋Ｓｒ１．４Ｃａ０．６ＳｉＯ４：Ｅｕ２＋）；
ｘ＝０．４３８０、ｙ＝０．４００４、Ｒａ＝７３、
Ｔ＝３４９７Ｋ（４６４ｎｍ＋Ｓｒ１．６Ｂａ０．４ＳｉＯ４：Ｅｕ２＋）；
ｘ＝０．４０８６、ｙ＝０．３９９６、Ｒａ＝７４、
Ｔ＝４１８３Ｋ（４６４ｎｍ＋Ｓｒ１．９Ｂａ０．０８Ｃａ０．０２ＳｉＯ４：Ｅｕ２＋）；
ｘ＝０．３７６２、ｙ＝０．３８７３、Ｒａ＝７５、
Ｔ＝６６２４Ｋ（４６４ｎｍ＋Ｓｒ１．９Ｂａ０．０２Ｃａ０．０８ＳｉＯ４：Ｅｕ２＋）；
ｘ＝０．３１０１、ｙ＝０．３３０６、Ｒａ＝７６、
Ｔ＝６３８５Ｋ（４６４ｎｍ＋Ｓｒ１．６Ｃａ０．４ＳｉＯ４：Ｅｕ２＋＋Ｓｒ０．４Ｂａ１．６ＳｉＯ４：Ｅｕ２＋）；
ｘ＝０．３１３５、ｙ＝０．３３９７、Ｒａ＝８２、
Ｔ＝４２１６Ｋ（４６４ｎｍ＋Ｓｒ１．９Ｂａ０．０８Ｃａ０．０２ＳｉＯ４：Ｅｕ２＋））；
ｘ＝０．３７１０、ｙ＝０．３６９６、Ｒａ＝８２、
Ｔ＝３９５４Ｋ（４６４ｎｍ＋Ｓｒ１．６Ｂａ０．４ＳｉＯ４：Ｅｕ２＋＋Ｓｒ０．４Ｂａ１．６ＳｉＯ４：Ｅｕ２＋＋ＹＶＯ４：Ｅｕ３＋）；
ｘ＝０．３７５６、ｙ＝０．３８１６、Ｒａ＝８４、
Ｔ＝６４８９Ｋ（ＵＶ−ＬＥＤ＋Ｓｒ１．６Ｃａ０．４ＳｉＯ４：Ｅｕ２＋＋Ｓｒ０．４Ｂａ１．６ＳｉＯ４：Ｅｕ２＋＋バリウム−マグネシウムアルミン酸塩：Ｅｕ２＋）；
ｘ＝０．３１１５、ｙ＝０．３３９０、Ｒａ＝８６、
Ｔ＝５０９７Ｋ（４６４ｎｍ＋Ｓｒ１．６Ｂａ０．４（Ｓｉ０．９８Ｂ０．０２）Ｏ４：Ｅｕ２＋＋Ｓｒ０．６Ｂａ１．４ＳｉＯ４：Ｅｕ２＋）；
ｘ＝０．３４２３、ｙ＝０．３４８５、Ｒａ＝８２、
Ｔ＝５０８４Ｋ（ＵＶ−ＬＥＤ＋Ｓｒ１．６Ｃａ０．４（Ｓｉ０．９９Ｂ０．０１）Ｏ４：Ｅｕ２＋＋Ｓｒ０．６Ｂａ１．４ＳｉＯ４：Ｅｕ２＋＋ストロンチウム−マグネシウムアルミン酸塩：Ｅｕ２＋）；
ｘ＝０．３４３０、ｙ＝０．３５３１、Ｒａ＝８３、
Ｔ＝３３６９Ｋ（４６４ｎｍ＋Ｓｒ１．４Ｃａ０．６Ｓｉ０．９５Ｇｅ０．０５Ｏ４：Ｅｕ２＋）；
ｘ＝０．４１３４、ｙ＝０．３９５９、Ｒａ＝７４、
Ｔ＝２７８７Ｋ（４６６ｎｍ＋Ｓｒ１．４Ｃａ０．６Ｓｉ０．９８Ｐ０．０２Ｏ４．０１：Ｅｕ２＋）；
ｘ＝０．４６３０、ｙ＝０．４２８０、Ｒａ＝７２、
Ｔ＝２９１３Ｋ（４６４ｎｍ＋Ｓｒ１．４Ｃａ０．６Ｓｉ０．９８Ａｌ０．０２Ｏ４：Ｅｕ２＋）；
ｘ＝０．４４２５、ｙ＝０．４０５０、Ｒａ＝７３
Ｔ＝４２０１Ｋ。
本発明の有利な実施例において、色変換は次のとおり実施される。
１つ又は複数のＬＥＤチップ１（図７参照）をプリント板２上で組み立てる。ＬＥＤ上に直接、（一方ではＬＥＤチップの保護のために、他方ではＬＥＤチップ内で発生した光をより良好に出射させることができるようにするために）封止材料（カプセル化材料）３を半球もしくは半楕円の形で配置する。この封止材料３は、各ダイを個々に包含することもできるし、封止材料が全てのＬＥＤのための共通の１個の形であってもよい。このようにして実装したプリント板２を反射鏡４内に設置するか、またはこの反射鏡４をＬＥＤチップ１の上にかぶせる。
反射鏡４に透光板５を設置する。一方ではこの透光板５は装置の保護のために使用され、他方ではこの透光板５中に蛍光体６が混入されている。透光板５を透過する青色光（もしくは紫外放射）は、その透過の際に部分的に蛍光体６によって第２のスペクトル範囲へ変換され、その結果全体的に白色の色印象が得られる。平面平行な板の間で生じるような導波作用による損失は、該透光板の不透明性および散乱特性によって減少される。さらに反射鏡４によって、すでに調整された光のみが透光板５に入射するようにされ、その結果全反射作用が始めから減少される。
図８に示されているように、蛍光体６を反射鏡４に被着することも可能である。この場合には透光板は必要とされない。
これとは別に、各ＬＥＤチップ１上に反射鏡４´がかぶせられていてもよく、この反射鏡４´は封止材料（カプセル化材料）３´をドーム形に注型され、透光板５が各反射鏡４´上につまりこの装置全体の上に配置されている（図９参照）。
照明光源を製造するために、個別ＬＥＤの代りにＬＥＤアレイを使用すると有利である。本発明の優れた変形例において、色変換は、ＬＥＤチップ１が直接プリント板２上に組み立てられているＬＥＤアレイ１´（図１０参照）で次のように実施される。
ＬＥＤアレイ１´を注型材料（例えばエポキシ樹脂）３を用いて、別の材料（例えばＰＭＭＡ）からなる透明なポリマーレンズ７に接着する。ポリマーレンズ７および注型材料３の材料は、できるだけ近似する屈折率を有するように、すなわち位相整合されているように選択される。注型材料３は、ポリマーレンズ７の最大で球形または楕円形の窪みの中に存在する。この窪みの形状は、注型材料３中に色変換物質が分散されているという点で重要であり、従ってこの形状付与によって、角度に関係しない発光色が得られることが保証される。これとは別に前記アレイは、最初に透明な注型材料で注型され、引き続いて色変換物質を含有している注型材料を用いてポリマーレンズに接着されていてもよい。
少なくとも２つの異なる蛍光体が使用されている特に良好な演色を有する白色ＬＥＤを製造するために、これらの蛍光体を一緒に１つのマトリックス中に分散させるのではなく、これら蛍光体を別々に分散させて設けると有利である。これは、最終的な光色が複数段の色変換プロセスによって得られる組合せに特に該当する。すなわち、最長波の発光色が１つの発光プロセスによって生成されることであり、この発光プロセスは次のとおり、すなわち、ＬＥＤの発光を第１の蛍光体が吸収する―第１の蛍光体が発光する―第１の蛍光体の発光を第２の蛍光体が吸収する―第２の蛍光体が発光する、というように進行する。特に、この種のプロセスにとって、個々の蛍光体を光の伝搬方向に相前後して配置すると有利である。というのは、それによって、種々の材料を一様に分散させた場合よりも材料の濃度を減少させることができるからである。
本発明は上述の実施例に限定されない。蛍光体はポリマーレンズ（または別の光学部品）中に組み込まれていてもよい。蛍光体をＬＥＤダイ上に直接配置することもできるし、透明な注型材料の表面上に配置することもできる。また蛍光体を散乱粒子と共に１つのマトリックス中に組み込むこともできる。このことによって、マトリックス中での沈降が防止され、均一な光出射が保証される。
本発明によるＬＥＤ光源のスペクトル（波長に依存する相対強度）を示す図 本発明によるＬＥＤ光源のスペクトル（波長に依存する相対強度）を示す図 本発明によるＬＥＤ光源のスペクトル（波長に依存する相対強度）を示す図 本発明によるＬＥＤ光源のスペクトル（波長に依存する相対強度）を示す図 本発明によるＬＥＤ光源のスペクトル（波長に依存する相対強度）を示す図 本発明によるＬＥＤ光源のスペクトル（波長に依存する相対強度）を示す図 本発明によるＬＥＤ光源の第１実施例の概略断面図 本発明によるＬＥＤ光源の第２実施例の概略断面図 本発明によるＬＥＤ光源の第３実施例の概略断面図 本発明によるＬＥＤ光源の第４実施例の概略断面図
符号の説明
１ ＬＥＤチップ
１´ ＬＥＤアレイ
２ プリント板
３、３´ 封止材料
４、４´ 反射鏡
５ 透光板
６ 蛍光体
７ ポリマーレンズ

Claims (15)

  1. ４４０〜４７５ｎｍの波長の青色光を出射するためのＬＥＤ素子と、
    前記ＬＥＤ素子の発光の一部を吸収し、別のスペクトル範囲で発光する蛍光体と、を含む白色を発生する光源において、
    前記蛍光体は、組成Ａ：
    （２−ｘ−ｙ）ＳｒＯ・ｘ（Ｂａｕ，Ｃａｖ）Ｏ・（１−ａ−ｂ−ｃ−ｄ）ＳｉＯ２・ａ
    Ｐ２Ｏ５ ｂＡｌ２Ｏ３ ｃＢ２Ｏ３ ｄＧｅＯ２：ｙＥｕ２＋
    （但し、０＜ｘ＜１．６
    ０．００５＜ｙ＜０．５
    ｘ＋ｙ≦１．６
    ０≦ａ、ｂ、ｃ、ｄ＜０．５
    ｕ＋ｖ＝１である）
    または組成Ｂ：
    （２−ｘ−ｙ）ＢａＯ・ｘ（Ｓｒｕ，Ｃａｖ）Ｏ・（１−ａ−ｂ−ｃ−ｄ）ＳｉＯ２・ａ
    Ｐ２Ｏ５ ｂＡｌ２Ｏ３ ｃＢ２Ｏ３ ｄＧｅＯ２：ｙＥｕ２＋
    （但し、０．０１＜ｘ＜１．６
    ０．００５＜ｙ＜０．５
    ０≦ａ、ｂ、ｃ、ｄ＜０．５
    ｕ＋ｖ＝１
    ｘ×ｕ≧０．４である）
    で示される２価のユウロピウムで活性化されたアルカリ土類金属オルト珪酸塩であり、ｘ
    、ｙ、ｕ、ｖ、ａ、ｂ、ｃ及びｄの各パラメータに依存して黄緑色、黄色又はオレンジ色
    の範囲で発光し、
    発生される白色の色温度及び演色評価数が、黄緑色、黄色又はオレンジ色の範囲におけ
    る前記各パラメータの選択により調整されることを特徴とする光源。
  2. 前記蛍光体の前記組成において、ａ、ｂ、ｃ、ｄの値のうちの少なくとも１つが０．０
    １より大きいことを特徴とする請求項１に記載の光源。
  3. 前記蛍光体において珪素の一部がガリウムによって置換されていることを特徴とする請
    求項１または２に記載の光源。
  4. 光源が、２価のユウロピウムおよび／またはマンガンで活性化されたアルカリ土類金属
    アルミン酸塩の群から成る付加的な蛍光体、および／または、Ｙ（Ｖ，Ｐ，Ｓｉ）Ｏ４：
    Ｅｕ，Ｂｉ、Ｙ２Ｏ２Ｓ：Ｅｕ，Ｂｉまたは式Ｍｅ（３−ｘ−ｙ）ＭｇＳｉ２Ｏ８：ｘＥ
    ｕ，ｙＭｎ（但し、０．００５＜ｘ＜０．５、０．００５＜ｙ＜０．５、ＭｅはＢａ、Ｓ
    ｒ、Ｃａの少なくとも１つから成る）で示されるアルカリ土類金属−マグネシウム−二珪
    酸塩：Ｅｕ２＋，Ｍｎ２＋の群から成り赤色光を発する付加的な他の蛍光体を含んでいる
    ことを特徴とする請求項１又は２記載の光源。
  5. １価のイオンが蛍光体格子の中に組み込まれていることを特徴とする請求項１から４の
    いずれか１項に記載の光源。
  6. 前記１価のイオンは、ハロゲン化物および／またはアルカリ金属であることを特徴とす
    る請求項５に記載の光源。
  7. 前記蛍光体は４３０ｎｍ〜６５０ｎｍのスペクトル範囲で発光し、
    光源がＲａ値＞７０を有する白色光を放射することを特徴とする請求項１から６のいず
    れか１項に記載の光源。
  8. １つまたは複数のＬＥＤチップ（１）が反射鏡（４）内のプリント板（２）上に配置さ
    れ、蛍光体（６）が、反射鏡（４）上に配置されている透光板（５）内に分散されている
    ことを特徴とする請求項１から７のいずれか１項に記載の光源。
  9. １つまたは複数のＬＥＤチップ（１）が反射鏡（４）内のプリント板（２）上に配置さ
    れ、蛍光体（６）が反射鏡（４）に被着されていることを特徴とする請求項１から７のい
    ずれか１項に記載の光源。
  10. ＬＥＤチップ（１）がドーム状の形状を有する透明な注型材料（３，３´）で注型され
    ていることを特徴とする請求項８または９に記載の光源。
  11. 蛍光体が注型材料（３）中に分散され、この注型材料（３）によって、ガスが閉込めら
    れることなしに、プリント板（２）上に配置されたＬＥＤチップ（１）とポリマーレンズ
    （７）とが結合され、ポリマーレンズ（７）と注型材料（３）とが最大で０．１だけ異な
    る屈折率を有することを特徴とする請求項１から７のいずれか１項に記載の光源。
  12. ポリマーレンズ（７）が球形もしくは楕円形の窪みを有し、この窪みが注型材料（３）
    を充填されて、ＬＥＤアレイ（１´）がポリマーレンズ（７）から僅かな距離で固定され
    ていることを特徴とする請求項１１に記載の光源。
  13. 蛍光体が特に無機のマトリックス中に懸濁されていることを特徴とする請求項１から１
    ２のいずれか１項に記載の光源。
  14. 少なくとも２つの蛍光体が個々にマトリックス中に分散され、これらのマトリックスが
    光の伝搬方向に相前後して配置されていることを特徴とする請求項４又は１３に記載の光
    源。
  15. 体積分布の平均粒度ｄ５０が２μｍ〜２０μｍであることを特徴とする請求項１から１
    ４のいずれか１項に記載の光源。
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Families Citing this family (540)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1439586B1 (de) 1996-06-26 2014-03-12 OSRAM Opto Semiconductors GmbH Licht abstrahlendes Halbleiterbauelement mit Lumineszenzkonversionselement
AT410266B (de) * 2000-12-28 2003-03-25 Tridonic Optoelectronics Gmbh Lichtquelle mit einem lichtemittierenden element
JP2002232013A (ja) * 2001-02-02 2002-08-16 Rohm Co Ltd 半導体発光素子
JP4161603B2 (ja) * 2001-03-28 2008-10-08 日亜化学工業株式会社 窒化物半導体素子
TW541722B (en) * 2001-04-20 2003-07-11 Nichia Corp Light emitting device
US7091656B2 (en) * 2001-04-20 2006-08-15 Nichia Corporation Light emitting device
DE10131698A1 (de) * 2001-06-29 2003-01-30 Osram Opto Semiconductors Gmbh Oberflächenmontierbares strahlungsemittierendes Bauelement und Verfahren zu dessen Herstellung
US20030015708A1 (en) 2001-07-23 2003-01-23 Primit Parikh Gallium nitride based diodes with low forward voltage and low reverse current operation
JP3749243B2 (ja) 2001-09-03 2006-02-22 松下電器産業株式会社 半導体発光デバイス，発光装置及び半導体発光デバイスの製造方法
US7800121B2 (en) * 2002-08-30 2010-09-21 Lumination Llc Light emitting diode component
US7224000B2 (en) 2002-08-30 2007-05-29 Lumination, Llc Light emitting diode component
US10340424B2 (en) 2002-08-30 2019-07-02 GE Lighting Solutions, LLC Light emitting diode component
US7775685B2 (en) 2003-05-27 2010-08-17 Cree, Inc. Power surface mount light emitting die package
US7244965B2 (en) 2002-09-04 2007-07-17 Cree Inc, Power surface mount light emitting die package
JP4263453B2 (ja) 2002-09-25 2009-05-13 パナソニック株式会社 無機酸化物及びこれを用いた発光装置
JP2004127988A (ja) * 2002-09-30 2004-04-22 Toyoda Gosei Co Ltd 白色発光装置
MXPA05005658A (es) 2002-12-02 2005-08-16 3M Innovative Properties Co Sistema de iluminacion que utiliza una pluralidad de fuentes luminosas.
DE10259946A1 (de) * 2002-12-20 2004-07-15 Tews, Walter, Dipl.-Chem. Dr.rer.nat.habil. Leuchtstoffe zur Konversion der ultravioletten oder blauen Emission eines lichtemittierenden Elementes in sichtbare weiße Strahlung mit sehr hoher Farbwiedergabe
TW577184B (en) * 2002-12-26 2004-02-21 Epistar Corp Light emitting layer having voltage/resistance interdependent layer
DE10261908B4 (de) * 2002-12-27 2010-12-30 Osa Opto Light Gmbh Verfahren zur Herstellung eines konversionslichtemittierenden Elementes auf der Basis von Halbleiterlichtquellen
TWI351548B (en) * 2003-01-15 2011-11-01 Semiconductor Energy Lab Manufacturing method of liquid crystal display dev
JP2004273798A (ja) * 2003-03-10 2004-09-30 Toyoda Gosei Co Ltd 発光デバイス
US7465961B2 (en) 2003-03-25 2008-12-16 Sharp Kabushiki Kaisha Electronic equipment, backlight structure and keypad for electronic equipment
KR101148332B1 (ko) 2003-04-30 2012-05-25 크리, 인코포레이티드 콤팩트 광학 특성을 지닌 높은 전력의 발광 소자 패키지
US7777235B2 (en) 2003-05-05 2010-08-17 Lighting Science Group Corporation Light emitting diodes with improved light collimation
US7157745B2 (en) * 2004-04-09 2007-01-02 Blonder Greg E Illumination devices comprising white light emitting diodes and diode arrays and method and apparatus for making them
US7633093B2 (en) * 2003-05-05 2009-12-15 Lighting Science Group Corporation Method of making optical light engines with elevated LEDs and resulting product
US7528421B2 (en) * 2003-05-05 2009-05-05 Lamina Lighting, Inc. Surface mountable light emitting diode assemblies packaged for high temperature operation
US6982045B2 (en) * 2003-05-17 2006-01-03 Phosphortech Corporation Light emitting device having silicate fluorescent phosphor
AT412928B (de) * 2003-06-18 2005-08-25 Guenther Dipl Ing Dr Leising Verfahren zur herstellung einer weissen led sowie weisse led-lichtquelle
CN100511732C (zh) * 2003-06-18 2009-07-08 丰田合成株式会社 发光器件
US7145125B2 (en) 2003-06-23 2006-12-05 Advanced Optical Technologies, Llc Integrating chamber cone light using LED sources
US7521667B2 (en) 2003-06-23 2009-04-21 Advanced Optical Technologies, Llc Intelligent solid state lighting
DE10331076B4 (de) * 2003-07-09 2011-04-07 Airbus Operations Gmbh Leuchtelement mit einer Leuchtdiode
KR101034055B1 (ko) 2003-07-18 2011-05-12 엘지이노텍 주식회사 발광 다이오드 및 그 제조방법
JP2005073227A (ja) * 2003-08-04 2005-03-17 Sharp Corp 撮像装置
JP2005064047A (ja) * 2003-08-13 2005-03-10 Citizen Electronics Co Ltd 発光ダイオード
US7502392B2 (en) * 2003-09-12 2009-03-10 Semiconductor Energy Laboratory Co., Ltd. Laser oscillator
WO2005027231A1 (en) * 2003-09-15 2005-03-24 Koninklijke Philips Electronics N.V. White light emitting lighting system
US7723740B2 (en) * 2003-09-18 2010-05-25 Nichia Corporation Light emitting device
DE10354936B4 (de) * 2003-09-30 2012-02-16 Osram Opto Semiconductors Gmbh Strahlungemittierendes Halbleiterbauelement
US6995402B2 (en) * 2003-10-03 2006-02-07 Lumileds Lighting, U.S., Llc Integrated reflector cup for a light emitting device mount
JP2005142311A (ja) * 2003-11-06 2005-06-02 Tzu-Chi Cheng 発光装置
US20050110401A1 (en) * 2003-11-25 2005-05-26 Lin Jung K. Light emitting diode package structure
US20050116235A1 (en) * 2003-12-02 2005-06-02 Schultz John C. Illumination assembly
US7403680B2 (en) * 2003-12-02 2008-07-22 3M Innovative Properties Company Reflective light coupler
US7329887B2 (en) * 2003-12-02 2008-02-12 3M Innovative Properties Company Solid state light device
US20050116635A1 (en) * 2003-12-02 2005-06-02 Walson James E. Multiple LED source and method for assembling same
US7456805B2 (en) 2003-12-18 2008-11-25 3M Innovative Properties Company Display including a solid state light device and method using same
US7573072B2 (en) * 2004-03-10 2009-08-11 Lumination Llc Phosphor and blends thereof for use in LEDs
US7009285B2 (en) * 2004-03-19 2006-03-07 Lite-On Technology Corporation Optoelectronic semiconductor component
JP4516337B2 (ja) * 2004-03-25 2010-08-04 シチズン電子株式会社 半導体発光装置
US7868343B2 (en) * 2004-04-06 2011-01-11 Cree, Inc. Light-emitting devices having multiple encapsulation layers with at least one of the encapsulation layers including nanoparticles and methods of forming the same
KR100605211B1 (ko) * 2004-04-07 2006-07-31 엘지이노텍 주식회사 형광체 및 이를 이용한 백색 발광다이오드
KR100605212B1 (ko) * 2004-04-07 2006-07-31 엘지이노텍 주식회사 형광체 및 이를 이용한 백색 발광다이오드
JP5172329B2 (ja) * 2004-04-15 2013-03-27 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 電気的に制御可能な色変換セル
FR2869159B1 (fr) * 2004-04-16 2006-06-16 Rhodia Chimie Sa Diode electroluminescente emettant une lumiere blanche
KR100887489B1 (ko) * 2004-04-27 2009-03-10 파나소닉 주식회사 형광체 조성물과 그 제조 방법, 및 그 형광체 조성물을이용한 발광 장치
DE102005020695B4 (de) * 2004-04-30 2006-06-22 Optotransmitter-Umweltschutz-Technologie E.V. Vorrichtung zur Emission von Strahlung mit einstellbarer Spektraleigenschaft
KR100655894B1 (ko) 2004-05-06 2006-12-08 서울옵토디바이스주식회사 색온도 및 연색성이 우수한 파장변환 발광장치
KR100658700B1 (ko) 2004-05-13 2006-12-15 서울옵토디바이스주식회사 Ｒｇｂ 발광소자와 형광체를 조합한 발광장치
US7781789B2 (en) * 2006-11-15 2010-08-24 The Regents Of The University Of California Transparent mirrorless light emitting diode
US20100289043A1 (en) * 2006-11-15 2010-11-18 The Regents Of The University Of California High light extraction efficiency light emitting diode (led) through multiple extractors
US8308980B2 (en) 2004-06-10 2012-11-13 Seoul Semiconductor Co., Ltd. Light emitting device
KR100665299B1 (ko) 2004-06-10 2007-01-04 서울반도체 주식회사 발광물질
KR100665298B1 (ko) 2004-06-10 2007-01-04 서울반도체 주식회사 발광장치
TWI308397B (en) * 2004-06-28 2009-04-01 Epistar Corp Flip-chip light emitting diode and fabricating method thereof
JP4996463B2 (ja) * 2004-06-30 2012-08-08 クリー インコーポレイテッド 発光デバイスをパッケージするためのチップスケール方法およびチップスケールにパッケージされた発光デバイス
US7534633B2 (en) 2004-07-02 2009-05-19 Cree, Inc. LED with substrate modifications for enhanced light extraction and method of making same
EP1769050B1 (en) * 2004-07-06 2013-01-16 Lightscape Materials Inc. Efficient, green-emitting phosphors, and combinations with red-emitting phosphors
TW200614548A (en) * 2004-07-09 2006-05-01 Matsushita Electric Ind Co Ltd Light-emitting device
US7575697B2 (en) * 2004-08-04 2009-08-18 Intematix Corporation Silicate-based green phosphors
DE602005004297T2 (de) 2004-08-06 2008-12-24 Philips Intellectual Property & Standards Gmbh Hochleistungs-led-lampen-system
US20060044782A1 (en) * 2004-08-31 2006-03-02 Robin Hsu Light-storing safety device
JP4747726B2 (ja) * 2004-09-09 2011-08-17 豊田合成株式会社 発光装置
JP2006086300A (ja) * 2004-09-15 2006-03-30 Sanken Electric Co Ltd 保護素子を有する半導体発光装置及びその製造方法
US7745832B2 (en) * 2004-09-24 2010-06-29 Epistar Corporation Semiconductor light-emitting element assembly with a composite substrate
KR100668609B1 (ko) * 2004-09-24 2007-01-16 엘지전자 주식회사 백색광원소자
JP2006114637A (ja) * 2004-10-13 2006-04-27 Toshiba Corp 半導体発光装置
JP4880892B2 (ja) 2004-10-18 2012-02-22 株式会社東芝 蛍光体，蛍光体の製造方法およびこれを用いた発光装置
JP4534717B2 (ja) * 2004-10-29 2010-09-01 豊田合成株式会社 発光装置
US7772609B2 (en) 2004-10-29 2010-08-10 Ledengin, Inc. (Cayman) LED package with structure and materials for high heat dissipation
US8816369B2 (en) 2004-10-29 2014-08-26 Led Engin, Inc. LED packages with mushroom shaped lenses and methods of manufacturing LED light-emitting devices
US7670872B2 (en) 2004-10-29 2010-03-02 LED Engin, Inc. (Cayman) Method of manufacturing ceramic LED packages
US9929326B2 (en) 2004-10-29 2018-03-27 Ledengin, Inc. LED package having mushroom-shaped lens with volume diffuser
US8134292B2 (en) * 2004-10-29 2012-03-13 Ledengin, Inc. Light emitting device with a thermal insulating and refractive index matching material
US8324641B2 (en) * 2007-06-29 2012-12-04 Ledengin, Inc. Matrix material including an embedded dispersion of beads for a light-emitting device
US7419839B2 (en) 2004-11-12 2008-09-02 Philips Lumileds Lighting Company, Llc Bonding an optical element to a light emitting device
US7462502B2 (en) * 2004-11-12 2008-12-09 Philips Lumileds Lighting Company, Llc Color control by alteration of wavelength converting element
JP2008523169A (ja) * 2004-12-07 2008-07-03 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 放射線源とルミネッセンス材料を含む照明システム
DE112005003841B4 (de) * 2004-12-14 2016-03-03 Seoul Viosys Co., Ltd. Licht emittierendes Bauelement mit einer Mehrzahl Licht emittierender Zellen
RU2359362C2 (ru) * 2004-12-22 2009-06-20 Сеул Семикондактор Ко., Лтд. Светоизлучающее устройство
US20060138443A1 (en) * 2004-12-23 2006-06-29 Iii-N Technology, Inc. Encapsulation and packaging of ultraviolet and deep-ultraviolet light emitting diodes
US20060139335A1 (en) * 2004-12-23 2006-06-29 International Business Machines Corporation Assembly and device for a display having a perimeter touch guard seal
MX2007007939A (es) 2004-12-27 2007-11-07 Quantum Paper Inc Dispositivo de representacion visual emisivo direccionable e imprimible.
US7821023B2 (en) * 2005-01-10 2010-10-26 Cree, Inc. Solid state lighting component
US9070850B2 (en) 2007-10-31 2015-06-30 Cree, Inc. Light emitting diode package and method for fabricating same
US9793247B2 (en) 2005-01-10 2017-10-17 Cree, Inc. Solid state lighting component
TWI303111B (en) * 2005-01-19 2008-11-11 Advanced Optoelectronic Tech Light emitting diode device and manufacturing method thereof
TWM286903U (en) * 2005-01-25 2006-02-01 Shu-Shiung Guo Jewelry lamp
US7525248B1 (en) 2005-01-26 2009-04-28 Ac Led Lighting, L.L.C. Light emitting diode lamp
EP1694047B1 (de) * 2005-02-16 2020-03-18 X-Rite Switzerland GmbH Beleuchtungseinrichtung für ein Farbmessgerät
US20060189013A1 (en) * 2005-02-24 2006-08-24 3M Innovative Properties Company Method of making LED encapsulant with undulating surface
WO2006095949A1 (en) 2005-03-11 2006-09-14 Seoul Semiconductor Co., Ltd. Led package having an array of light emitting cells coupled in series
US7274045B2 (en) * 2005-03-17 2007-09-25 Lumination Llc Borate phosphor materials for use in lighting applications
JP2006261540A (ja) * 2005-03-18 2006-09-28 Stanley Electric Co Ltd 発光デバイス
US7276183B2 (en) * 2005-03-25 2007-10-02 Sarnoff Corporation Metal silicate-silica-based polymorphous phosphors and lighting devices
KR100799839B1 (ko) * 2005-03-30 2008-01-31 삼성전기주식회사 파장변환용 형광체 혼합물과 이를 이용한 백색 발광장치
KR101142519B1 (ko) * 2005-03-31 2012-05-08 서울반도체 주식회사 적색 형광체 및 녹색 형광체를 갖는 백색 발광다이오드를채택한 백라이트 패널
US7791561B2 (en) 2005-04-01 2010-09-07 Prysm, Inc. Display systems having screens with optical fluorescent materials
WO2006107032A1 (ja) * 2005-04-01 2006-10-12 Sony Corporation 情報処理システムおよび方法、並びにプログラム
US7474286B2 (en) * 2005-04-01 2009-01-06 Spudnik, Inc. Laser displays using UV-excitable phosphors emitting visible colored light
US7733310B2 (en) 2005-04-01 2010-06-08 Prysm, Inc. Display screens having optical fluorescent materials
US7994702B2 (en) 2005-04-27 2011-08-09 Prysm, Inc. Scanning beams displays based on light-emitting screens having phosphors
US8089425B2 (en) 2006-03-03 2012-01-03 Prysm, Inc. Optical designs for scanning beam display systems using fluorescent screens
US8000005B2 (en) 2006-03-31 2011-08-16 Prysm, Inc. Multilayered fluorescent screens for scanning beam display systems
US7690167B2 (en) * 2005-04-28 2010-04-06 Antonic James P Structural support framing assembly
KR100704492B1 (ko) * 2005-05-02 2007-04-09 한국화학연구원 형광체를 이용한 백색 발광 다이오드의 제조 방법
KR100666189B1 (ko) 2005-06-30 2007-01-09 서울반도체 주식회사 발광 소자
US8088302B2 (en) * 2005-05-24 2012-01-03 Seoul Semiconductor Co., Ltd. Green phosphor of thiogallate, red phosphor of alkaline earth sulfide and white light emitting device thereof
US8272758B2 (en) 2005-06-07 2012-09-25 Oree, Inc. Illumination apparatus and methods of forming the same
US8128272B2 (en) 2005-06-07 2012-03-06 Oree, Inc. Illumination apparatus
US8215815B2 (en) 2005-06-07 2012-07-10 Oree, Inc. Illumination apparatus and methods of forming the same
US7980743B2 (en) 2005-06-14 2011-07-19 Cree, Inc. LED backlighting for displays
TWI422044B (zh) * 2005-06-30 2014-01-01 Cree Inc 封裝發光裝置之晶片尺度方法及經晶片尺度封裝之發光裝置
KR101161383B1 (ko) * 2005-07-04 2012-07-02 서울반도체 주식회사 발광 다이오드 및 이를 제조하기 위한 방법
DE102005038698A1 (de) 2005-07-08 2007-01-18 Tridonic Optoelectronics Gmbh Optoelektronische Bauelemente mit Haftvermittler
KR100670478B1 (ko) * 2005-07-26 2007-01-16 엘지이노텍 주식회사 발광소자
JP4907121B2 (ja) 2005-07-28 2012-03-28 昭和電工株式会社 発光ダイオード及び発光ダイオードランプ
EP1750309A3 (en) * 2005-08-03 2009-07-29 Samsung Electro-mechanics Co., Ltd Light emitting device having protection element
DE602006011168D1 (de) * 2005-08-04 2010-01-28 Nichia Corp Leuchtstoff und leuchtvorrichtung
WO2007018098A1 (ja) * 2005-08-05 2007-02-15 Olympus Medical Systems Corp. 発光ユニット
US7329907B2 (en) * 2005-08-12 2008-02-12 Avago Technologies, Ecbu Ip Pte Ltd Phosphor-converted LED devices having improved light distribution uniformity
US7501753B2 (en) * 2005-08-31 2009-03-10 Lumination Llc Phosphor and blends thereof for use in LEDs
KR100724591B1 (ko) * 2005-09-30 2007-06-04 서울반도체 주식회사 발광 소자 및 이를 포함한 ｌｅｄ 백라이트
US7765792B2 (en) 2005-10-21 2010-08-03 Honeywell International Inc. System for particulate matter sensor signal processing
KR101258397B1 (ko) 2005-11-11 2013-04-30 서울반도체 주식회사 구리 알칼리토 실리케이트 혼성 결정 형광체
JP4899433B2 (ja) * 2005-11-15 2012-03-21 三菱化学株式会社 蛍光体、並びにそれを用いた発光装置、画像表示装置及び照明装置
US7914173B2 (en) * 2005-11-17 2011-03-29 Koninlijke Philips Electronics N.V. Lamp assembly
US7926300B2 (en) 2005-11-18 2011-04-19 Cree, Inc. Adaptive adjustment of light output of solid state lighting panels
US7959325B2 (en) * 2005-11-18 2011-06-14 Cree, Inc. Solid state lighting units and methods of forming solid state lighting units
WO2007061811A1 (en) * 2005-11-18 2007-05-31 Cree, Inc. Solid state lighting panels with variable voltage boost current sources
US8514210B2 (en) 2005-11-18 2013-08-20 Cree, Inc. Systems and methods for calibrating solid state lighting panels using combined light output measurements
US7943946B2 (en) * 2005-11-21 2011-05-17 Sharp Kabushiki Kaisha Light emitting device
US20070125984A1 (en) * 2005-12-01 2007-06-07 Sarnoff Corporation Phosphors protected against moisture and LED lighting devices
US8906262B2 (en) * 2005-12-02 2014-12-09 Lightscape Materials, Inc. Metal silicate halide phosphors and LED lighting devices using the same
US20070133204A1 (en) * 2005-12-13 2007-06-14 Ilight Technologies, Inc. Illumination device with hue transformation
KR101055772B1 (ko) 2005-12-15 2011-08-11 서울반도체 주식회사 발광장치
TWI421438B (zh) 2005-12-21 2014-01-01 克里公司 照明裝置
US20070145879A1 (en) * 2005-12-22 2007-06-28 Abramov Vladimir S Light emitting halogen-silicate photophosphor compositions and systems
JP2009527071A (ja) 2005-12-22 2009-07-23 クリー エル イー ディー ライティング ソリューションズ インコーポレイテッド 照明装置
KR20080106402A (ko) 2006-01-05 2008-12-05 일루미텍스, 인크. Ｌｅｄ로부터 광을 유도하기 위한 개별 광학 디바이스
DE102006001195A1 (de) 2006-01-10 2007-07-12 Sms Demag Ag Verfahren zum Gieß-Walzen mit erhöhter Gießgeschwindigkeit und daran anschließendem Warmwalzen von relativ dünnen Metall-,insbesondere Stahlwerkstoff-Strängen,und Gieß-Walz-Einrichtung
US8044412B2 (en) 2006-01-20 2011-10-25 Taiwan Semiconductor Manufacturing Company, Ltd Package for a light emitting element
US8441179B2 (en) 2006-01-20 2013-05-14 Cree, Inc. Lighting devices having remote lumiphors that are excited by lumiphor-converted semiconductor excitation sources
KR101408622B1 (ko) * 2006-01-20 2014-06-17 크리, 인코포레이티드 루미포르 필름의 공간적 분리에 의한 고체 상태 발광기의 스펙트럼 컨텐츠 시프팅
KR101283182B1 (ko) * 2006-01-26 2013-07-05 엘지이노텍 주식회사 발광 다이오드 패키지 및 그 제조 방법
JP2007231250A (ja) * 2006-02-02 2007-09-13 Nichia Chem Ind Ltd 蛍光体及びそれを用いた発光装置
DE102006005042A1 (de) * 2006-02-03 2007-08-09 Tridonic Optoelectronics Gmbh Licht emittierende Vorrichtung mit nicht-aktiviertem Leuchtstoff
TWI317756B (en) * 2006-02-07 2009-12-01 Coretronic Corp Phosphor, fluorescent gel, and light emitting diode device
CN101379164B (zh) * 2006-02-10 2012-11-21 三菱化学株式会社 荧光体及其制造方法、含荧光体的组合物、发光装置、图像显示装置和照明装置
US8451195B2 (en) 2006-02-15 2013-05-28 Prysm, Inc. Servo-assisted scanning beam display systems using fluorescent screens
US7884816B2 (en) 2006-02-15 2011-02-08 Prysm, Inc. Correcting pyramidal error of polygon scanner in scanning beam display systems
US7928462B2 (en) 2006-02-16 2011-04-19 Lg Electronics Inc. Light emitting device having vertical structure, package thereof and method for manufacturing the same
KR100746338B1 (ko) * 2006-02-20 2007-08-03 한국과학기술원 백색 발광장치용 형광체, 이의 제조방법 및 형광체를이용한 백색 발광장치
US20070210282A1 (en) * 2006-03-13 2007-09-13 Association Suisse Pour La Recherche Horlogere (Asrh) Phosphorescent compounds
US8323529B2 (en) * 2006-03-16 2012-12-04 Seoul Semiconductor Co., Ltd. Fluorescent material and light emitting diode using the same
CN100590173C (zh) 2006-03-24 2010-02-17 北京有色金属研究总院 一种荧光粉及其制造方法和所制成的电光源
US7285791B2 (en) * 2006-03-24 2007-10-23 Goldeneye, Inc. Wavelength conversion chip for use in solid-state lighting and method for making same
JP5032043B2 (ja) 2006-03-27 2012-09-26 豊田合成株式会社 フェラスメタルアルカリ土類金属ケイ酸塩混合結晶蛍光体およびこれを用いた発光装置
US7675145B2 (en) * 2006-03-28 2010-03-09 Cree Hong Kong Limited Apparatus, system and method for use in mounting electronic elements
WO2007111355A1 (ja) * 2006-03-28 2007-10-04 Kyocera Corporation 発光装置
KR100875443B1 (ko) 2006-03-31 2008-12-23 서울반도체 주식회사 발광 장치
JP5091421B2 (ja) * 2006-04-07 2012-12-05 株式会社東芝 半導体発光装置
US8373195B2 (en) 2006-04-12 2013-02-12 SemiLEDs Optoelectronics Co., Ltd. Light-emitting diode lamp with low thermal resistance
US7863639B2 (en) * 2006-04-12 2011-01-04 Semileds Optoelectronics Co. Ltd. Light-emitting diode lamp with low thermal resistance
US9335006B2 (en) 2006-04-18 2016-05-10 Cree, Inc. Saturated yellow phosphor converted LED and blue converted red LED
TW200807104A (en) 2006-04-19 2008-02-01 Mitsubishi Chem Corp Color image display device
CN102437152A (zh) 2006-04-24 2012-05-02 克利公司 侧视表面安装式白光led
WO2007125453A2 (en) * 2006-04-27 2007-11-08 Philips Intellectual Property & Standards Gmbh Illumination system comprising a radiation source and a luminescent material
US7722220B2 (en) 2006-05-05 2010-05-25 Cree Led Lighting Solutions, Inc. Lighting device
US7755282B2 (en) * 2006-05-12 2010-07-13 Edison Opto Corporation LED structure and fabricating method for the same
CN101077973B (zh) * 2006-05-26 2010-09-29 大连路明发光科技股份有限公司 硅酸盐荧光材料及其制造方法以及使用其的发光装置
WO2007139894A2 (en) 2006-05-26 2007-12-06 Cree Led Lighting Solutions, Inc. Solid state light emitting device and method of making same
EP2035745B1 (en) * 2006-05-31 2020-04-29 IDEAL Industries Lighting LLC Lighting device with color control, and method of lighting
JP4973011B2 (ja) * 2006-05-31 2012-07-11 豊田合成株式会社 Ｌｅｄ装置
WO2007141688A1 (en) * 2006-06-02 2007-12-13 Philips Intellectual Property & Standards Gmbh Colored and white light generating lighting device
US7661840B1 (en) 2006-06-21 2010-02-16 Ilight Technologies, Inc. Lighting device with illuminated front panel
KR100939936B1 (ko) * 2006-06-21 2010-02-04 대주전자재료 주식회사 툴리움을 포함하는 백색 발광다이오드용 형광체 및 그제조방법
KR101258229B1 (ko) * 2006-06-30 2013-04-25 서울반도체 주식회사 발광 소자
TWI321857B (en) * 2006-07-21 2010-03-11 Epistar Corp A light emitting device
CN100590172C (zh) 2006-07-26 2010-02-17 北京有色金属研究总院 一种含硅的led荧光粉及其制造方法和所制成的发光器件
US7804147B2 (en) 2006-07-31 2010-09-28 Cree, Inc. Light emitting diode package element with internal meniscus for bubble free lens placement
KR100887068B1 (ko) * 2006-08-04 2009-03-04 삼성전기주식회사 발광 다이오드 모듈 및 이의 제조 방법
JP5205724B2 (ja) * 2006-08-04 2013-06-05 日亜化学工業株式会社 発光装置
WO2008022552A1 (fr) * 2006-08-15 2008-02-28 Luming Science And Technology Group Co., Ltd. Matériau luminescent à base de silicate avec pic multi-émission, son procédé de fabrication et son utilisation dans un dispositif d'éclairage
EP2060155A2 (en) * 2006-08-23 2009-05-20 Cree Led Lighting Solutions, Inc. Lighting device and lighting method
KR20080018620A (ko) * 2006-08-25 2008-02-28 서울반도체 주식회사 발광 소자
KR101258227B1 (ko) 2006-08-29 2013-04-25 서울반도체 주식회사 발광 소자
US20080123023A1 (en) * 2006-08-30 2008-05-29 Trung Doan White light unit, backlight unit and liquid crystal display device using the same
JP2008060344A (ja) * 2006-08-31 2008-03-13 Toshiba Corp 半導体発光装置
US7910938B2 (en) * 2006-09-01 2011-03-22 Cree, Inc. Encapsulant profile for light emitting diodes
US8425271B2 (en) * 2006-09-01 2013-04-23 Cree, Inc. Phosphor position in light emitting diodes
US7842960B2 (en) * 2006-09-06 2010-11-30 Lumination Llc Light emitting packages and methods of making same
DE102007020782A1 (de) * 2006-09-27 2008-04-03 Osram Opto Semiconductors Gmbh Strahlungsemittierende Vorrichtung
EP2070123A2 (en) 2006-10-02 2009-06-17 Illumitex, Inc. Led system and method
CN101605867B (zh) * 2006-10-03 2013-05-08 渲染材料公司 金属硅酸盐卤化物磷光体以及使用它们的led照明器件
WO2008044759A1 (en) * 2006-10-12 2008-04-17 Panasonic Corporation Light-emitting device and method for manufacturing the same
WO2008052318A1 (en) * 2006-10-31 2008-05-08 Tir Technology Lp Light source comprising a light-excitable medium
US10295147B2 (en) 2006-11-09 2019-05-21 Cree, Inc. LED array and method for fabricating same
US7648650B2 (en) * 2006-11-10 2010-01-19 Intematix Corporation Aluminum-silicate based orange-red phosphors with mixed divalent and trivalent cations
JP5372766B2 (ja) * 2006-11-15 2013-12-18 ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア 光取り出し効率の高い球形ｌｅｄ
US7813400B2 (en) 2006-11-15 2010-10-12 Cree, Inc. Group-III nitride based laser diode and method for fabricating same
WO2008060586A2 (en) 2006-11-15 2008-05-22 The Regents Of The University Of California Textured phosphor conversion layer light emitting diode
US7769066B2 (en) 2006-11-15 2010-08-03 Cree, Inc. Laser diode and method for fabricating same
US20090121250A1 (en) * 2006-11-15 2009-05-14 Denbaars Steven P High light extraction efficiency light emitting diode (led) using glass packaging
US8045595B2 (en) * 2006-11-15 2011-10-25 Cree, Inc. Self aligned diode fabrication method and self aligned laser diode
KR100687417B1 (ko) * 2006-11-17 2007-02-27 엘지이노텍 주식회사 형광체의 제조방법
US7692263B2 (en) 2006-11-21 2010-04-06 Cree, Inc. High voltage GaN transistors
WO2008070604A1 (en) 2006-12-04 2008-06-12 Cree Led Lighting Solutions, Inc. Lighting device and lighting method
WO2008070607A1 (en) 2006-12-04 2008-06-12 Cree Led Lighting Solutions, Inc. Lighting assembly and lighting method
JP2010512662A (ja) 2006-12-11 2010-04-22 ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア 透明発光ダイオード
US8013506B2 (en) 2006-12-12 2011-09-06 Prysm, Inc. Organic compounds for adjusting phosphor chromaticity
US7686478B1 (en) 2007-01-12 2010-03-30 Ilight Technologies, Inc. Bulb for light-emitting diode with color-converting insert
US8109656B1 (en) 2007-01-12 2012-02-07 Ilight Technologies, Inc. Bulb for light-emitting diode with modified inner cavity
US20080169746A1 (en) * 2007-01-12 2008-07-17 Ilight Technologies, Inc. Bulb for light-emitting diode
US7834367B2 (en) 2007-01-19 2010-11-16 Cree, Inc. Low voltage diode with reduced parasitic resistance and method for fabricating
US7968900B2 (en) * 2007-01-19 2011-06-28 Cree, Inc. High performance LED package
US9711703B2 (en) * 2007-02-12 2017-07-18 Cree Huizhou Opto Limited Apparatus, system and method for use in mounting electronic elements
US8456388B2 (en) * 2007-02-14 2013-06-04 Cree, Inc. Systems and methods for split processor control in a solid state lighting panel
CN101247043B (zh) * 2007-02-15 2010-05-26 葳天科技股份有限公司 发光二极管电路组件
US20080198572A1 (en) 2007-02-21 2008-08-21 Medendorp Nicholas W LED lighting systems including luminescent layers on remote reflectors
GB2460802B (en) 2007-03-20 2012-09-05 Prysm Inc Delivering and displaying advertisment or other application data to display systems
US7864381B2 (en) * 2007-03-20 2011-01-04 Xerox Corporation Document illuminator with LED-driven phosphor
DE102007016229A1 (de) 2007-04-04 2008-10-09 Litec Lll Gmbh Verfahren zur Herstellung von Leuchtstoffen basierend auf Orthosilikaten für pcLEDs
DE102007016228A1 (de) 2007-04-04 2008-10-09 Litec Lll Gmbh Verfahren zur Herstellung von Leuchtstoffen basierend auf Orthosilikaten für pcLEDs
JP5222600B2 (ja) 2007-04-05 2013-06-26 株式会社小糸製作所 蛍光体
US8169454B1 (en) 2007-04-06 2012-05-01 Prysm, Inc. Patterning a surface using pre-objective and post-objective raster scanning systems
US7697183B2 (en) 2007-04-06 2010-04-13 Prysm, Inc. Post-objective scanning beam systems
JP4903179B2 (ja) * 2007-04-23 2012-03-28 サムソン エルイーディー カンパニーリミテッド． 発光装置及びその製造方法
EP1987762A1 (de) * 2007-05-03 2008-11-05 F.Hoffmann-La Roche Ag Oximeter
US7781779B2 (en) * 2007-05-08 2010-08-24 Luminus Devices, Inc. Light emitting devices including wavelength converting material
RU2442197C2 (ru) 2007-05-17 2012-02-10 Призм, Инк. Многослойные экраны со светоизлучающими полосками для систем отображения со сканирующим лучом
US7712917B2 (en) * 2007-05-21 2010-05-11 Cree, Inc. Solid state lighting panels with limited color gamut and methods of limiting color gamut in solid state lighting panels
US8809126B2 (en) 2007-05-31 2014-08-19 Nthdegree Technologies Worldwide Inc Printable composition of a liquid or gel suspension of diodes
US8674593B2 (en) 2007-05-31 2014-03-18 Nthdegree Technologies Worldwide Inc Diode for a printable composition
US8456392B2 (en) 2007-05-31 2013-06-04 Nthdegree Technologies Worldwide Inc Method of manufacturing a light emitting, photovoltaic or other electronic apparatus and system
US8846457B2 (en) 2007-05-31 2014-09-30 Nthdegree Technologies Worldwide Inc Printable composition of a liquid or gel suspension of diodes
US9343593B2 (en) 2007-05-31 2016-05-17 Nthdegree Technologies Worldwide Inc Printable composition of a liquid or gel suspension of diodes
US8133768B2 (en) 2007-05-31 2012-03-13 Nthdegree Technologies Worldwide Inc Method of manufacturing a light emitting, photovoltaic or other electronic apparatus and system
US8415879B2 (en) 2007-05-31 2013-04-09 Nthdegree Technologies Worldwide Inc Diode for a printable composition
US8889216B2 (en) 2007-05-31 2014-11-18 Nthdegree Technologies Worldwide Inc Method of manufacturing addressable and static electronic displays
US9534772B2 (en) 2007-05-31 2017-01-03 Nthdegree Technologies Worldwide Inc Apparatus with light emitting diodes
US9018833B2 (en) 2007-05-31 2015-04-28 Nthdegree Technologies Worldwide Inc Apparatus with light emitting or absorbing diodes
US8877101B2 (en) 2007-05-31 2014-11-04 Nthdegree Technologies Worldwide Inc Method of manufacturing a light emitting, power generating or other electronic apparatus
US8852467B2 (en) 2007-05-31 2014-10-07 Nthdegree Technologies Worldwide Inc Method of manufacturing a printable composition of a liquid or gel suspension of diodes
US9425357B2 (en) 2007-05-31 2016-08-23 Nthdegree Technologies Worldwide Inc. Diode for a printable composition
US9419179B2 (en) 2007-05-31 2016-08-16 Nthdegree Technologies Worldwide Inc Diode for a printable composition
US7999283B2 (en) 2007-06-14 2011-08-16 Cree, Inc. Encapsulant with scatterer to tailor spatial emission pattern and color uniformity in light emitting diodes
US7878657B2 (en) 2007-06-27 2011-02-01 Prysm, Inc. Servo feedback control based on invisible scanning servo beam in scanning beam display systems with light-emitting screens
US8556430B2 (en) 2007-06-27 2013-10-15 Prysm, Inc. Servo feedback control based on designated scanning servo beam in scanning beam display systems with light-emitting screens
US7682525B2 (en) * 2007-06-27 2010-03-23 National Central University Material composition for producing blue phosphor by excitation of UV light and method for making the same
US7682524B2 (en) * 2007-06-27 2010-03-23 National Central University Phosphor for producing white light under excitation of UV light and method for making the same
KR100919461B1 (ko) * 2007-07-09 2009-09-28 심현섭 색온도가 변환되는 조명기기용 광원장치
EP2171502B1 (en) * 2007-07-17 2016-09-14 Cree, Inc. Optical elements with internal optical features and methods of fabricating same
EP2172983B1 (en) * 2007-07-19 2014-11-19 Sharp Kabushiki Kaisha Light emitting device
US8791631B2 (en) * 2007-07-19 2014-07-29 Quarkstar Llc Light emitting device
US7663315B1 (en) 2007-07-24 2010-02-16 Ilight Technologies, Inc. Spherical bulb for light-emitting diode with spherical inner cavity
RU2420930C1 (ru) * 2007-07-27 2011-06-10 Шарп Кабусики Кайся Осветительное устройство и устройство жидкокристаллического дисплея
US20090033612A1 (en) * 2007-07-31 2009-02-05 Roberts John K Correction of temperature induced color drift in solid state lighting displays
TWI342628B (en) * 2007-08-02 2011-05-21 Lextar Electronics Corp Light emitting diode package, direct type back light module and side type backlight module
US7863635B2 (en) * 2007-08-07 2011-01-04 Cree, Inc. Semiconductor light emitting devices with applied wavelength conversion materials
US8829820B2 (en) * 2007-08-10 2014-09-09 Cree, Inc. Systems and methods for protecting display components from adverse operating conditions
RU2467051C2 (ru) 2007-08-22 2012-11-20 Сеул Семикондактор Ко., Лтд. Люминофоры на основе нестехиометрических тетрагональных силикатов меди и щелочноземельного металла и способ их получения
US20090050912A1 (en) * 2007-08-24 2009-02-26 Foxsemicon Integrated Technology, Inc. Light emitting diode and outdoor illumination device having the same
US11114594B2 (en) 2007-08-24 2021-09-07 Creeled, Inc. Light emitting device packages using light scattering particles of different size
US7968899B2 (en) * 2007-08-27 2011-06-28 Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. LED light source having improved resistance to thermal cycling
KR101055769B1 (ko) 2007-08-28 2011-08-11 서울반도체 주식회사 비화학양론적 정방정계 알칼리 토류 실리케이트 형광체를채택한 발광 장치
WO2009028818A2 (en) 2007-08-28 2009-03-05 Seoul Semiconductor Co., Ltd. Light emitting device employing non-stoichiometric tetragonal alkaline earth silicate phosphors
DE202007019100U1 (de) 2007-09-12 2010-09-02 Lumitech Produktion Und Entwicklung Gmbh LED-Modul, LED-Leuchtmittel und LED-Leuchte für die energieeffiziente Wiedergabe von weißem Licht
DE102007043903A1 (de) * 2007-09-14 2009-03-26 Osram Gesellschaft mit beschränkter Haftung Leucht-Vorrichtung
CN101388161A (zh) * 2007-09-14 2009-03-18 科锐香港有限公司 Led表面安装装置和并入有此装置的led显示器
US8519437B2 (en) * 2007-09-14 2013-08-27 Cree, Inc. Polarization doping in nitride based diodes
DE102007043904A1 (de) * 2007-09-14 2009-03-19 Osram Gesellschaft mit beschränkter Haftung Leucht-Vorrichtung
JP5333226B2 (ja) * 2007-09-26 2013-11-06 日亜化学工業株式会社 発光素子及びそれを用いた発光装置
DE102007049799A1 (de) 2007-09-28 2009-04-02 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement
US9012937B2 (en) * 2007-10-10 2015-04-21 Cree, Inc. Multiple conversion material light emitting diode package and method of fabricating same
WO2009055079A1 (en) * 2007-10-26 2009-04-30 Cree Led Lighting Solutions, Inc. Illumination device having one or more lumiphors, and methods of fabricating same
US10256385B2 (en) 2007-10-31 2019-04-09 Cree, Inc. Light emitting die (LED) packages and related methods
US8866169B2 (en) 2007-10-31 2014-10-21 Cree, Inc. LED package with increased feature sizes
US8018139B2 (en) * 2007-11-05 2011-09-13 Enertron, Inc. Light source and method of controlling light spectrum of an LED light engine
US20120037886A1 (en) 2007-11-13 2012-02-16 Epistar Corporation Light-emitting diode device
US9634191B2 (en) * 2007-11-14 2017-04-25 Cree, Inc. Wire bond free wafer level LED
US8119028B2 (en) 2007-11-14 2012-02-21 Cree, Inc. Cerium and europium doped single crystal phosphors
US7923925B2 (en) * 2007-11-20 2011-04-12 Group Iv Semiconductor, Inc. Light emitting device with a stopper layer structure
US8866410B2 (en) * 2007-11-28 2014-10-21 Cree, Inc. Solid state lighting devices and methods of manufacturing the same
JP2010074117A (ja) * 2007-12-07 2010-04-02 Panasonic Electric Works Co Ltd 発光装置
US9431589B2 (en) * 2007-12-14 2016-08-30 Cree, Inc. Textured encapsulant surface in LED packages
US8823630B2 (en) * 2007-12-18 2014-09-02 Cree, Inc. Systems and methods for providing color management control in a lighting panel
US8172447B2 (en) 2007-12-19 2012-05-08 Oree, Inc. Discrete lighting elements and planar assembly thereof
US7929816B2 (en) * 2007-12-19 2011-04-19 Oree, Inc. Waveguide sheet containing in-coupling, propagation, and out-coupling regions
CN101482247A (zh) * 2008-01-11 2009-07-15 富士迈半导体精密工业（上海）有限公司 照明装置
US20090309114A1 (en) * 2008-01-16 2009-12-17 Luminus Devices, Inc. Wavelength converting light-emitting devices and methods of making the same
US8337029B2 (en) * 2008-01-17 2012-12-25 Intematix Corporation Light emitting device with phosphor wavelength conversion
US8040070B2 (en) * 2008-01-23 2011-10-18 Cree, Inc. Frequency converted dimming signal generation
US10008637B2 (en) 2011-12-06 2018-06-26 Cree, Inc. Light emitter devices and methods with reduced dimensions and improved light output
EP2240968A1 (en) 2008-02-08 2010-10-20 Illumitex, Inc. System and method for emitter layer shaping
TWI362413B (en) * 2008-02-25 2012-04-21 Ind Tech Res Inst Borate phosphor and white light illumination device utilizing the same
JP5227613B2 (ja) * 2008-02-27 2013-07-03 スタンレー電気株式会社 半導体発光装置
EP2260341A2 (en) 2008-03-05 2010-12-15 Oree, Advanced Illumination Solutions INC. Illumination apparatus and methods of forming the same
KR100986359B1 (ko) * 2008-03-14 2010-10-08 엘지이노텍 주식회사 발광 장치 및 이를 구비한 표시 장치
TWI361829B (en) 2008-03-20 2012-04-11 Ind Tech Res Inst White light illumination device
JP5665160B2 (ja) * 2008-03-26 2015-02-04 パナソニックＩｐマネジメント株式会社 発光装置および照明器具
DE102009018603B9 (de) 2008-04-25 2021-01-14 Samsung Electronics Co., Ltd. Leuchtvorrichtung und Herstellungsverfahren derselben
US7888688B2 (en) * 2008-04-29 2011-02-15 Bridgelux, Inc. Thermal management for LED
DE102008021662A1 (de) 2008-04-30 2009-11-05 Ledon Lighting Jennersdorf Gmbh LED mit Mehrband-Leuchtstoffsystem
US9287469B2 (en) 2008-05-02 2016-03-15 Cree, Inc. Encapsulation for phosphor-converted white light emitting diode
TW201007091A (en) * 2008-05-08 2010-02-16 Lok F Gmbh Lamp device
US8127477B2 (en) 2008-05-13 2012-03-06 Nthdegree Technologies Worldwide Inc Illuminating display systems
US7992332B2 (en) 2008-05-13 2011-08-09 Nthdegree Technologies Worldwide Inc. Apparatuses for providing power for illumination of a display object
WO2009143283A1 (en) * 2008-05-20 2009-11-26 Lightscape Materials, Inc. Silicate-based phosphors and led lighting devices using the same
DE102008025864A1 (de) 2008-05-29 2009-12-03 Lumitech Produktion Und Entwicklung Gmbh LED Modul für die Allgemeinbeleuchtung
DE202008018269U1 (de) 2008-05-29 2012-06-26 Lumitech Produktion Und Entwicklung Gmbh LED Modul für die Allgemeinbeleuchtung
US7766509B1 (en) * 2008-06-13 2010-08-03 Lumec Inc. Orientable lens for an LED fixture
KR101438826B1 (ko) 2008-06-23 2014-09-05 엘지이노텍 주식회사 발광장치
EP2304312A4 (en) * 2008-06-25 2015-03-25 Mario W Cardullo UV LIGHT SOURCE FOR GENERATING VISIBLE LIGHT
US8240875B2 (en) 2008-06-25 2012-08-14 Cree, Inc. Solid state linear array modules for general illumination
DE102008031029B4 (de) * 2008-06-30 2012-10-31 Texas Instruments Deutschland Gmbh Elektronisches Bauelement mit einer Schutzschaltung für eine lichtemittierende Vorrichtung
TWI499076B (zh) * 2008-07-03 2015-09-01 Samsung Electronics Co Ltd 波長轉換之發光二極體晶片及包含該發光二極體晶片之發光裝置
US8301002B2 (en) 2008-07-10 2012-10-30 Oree, Inc. Slim waveguide coupling apparatus and method
US8297786B2 (en) 2008-07-10 2012-10-30 Oree, Inc. Slim waveguide coupling apparatus and method
US7869112B2 (en) 2008-07-25 2011-01-11 Prysm, Inc. Beam scanning based on two-dimensional polygon scanner for display and other applications
US8698193B2 (en) * 2008-07-29 2014-04-15 Sharp Kabushiki Kaisha Light emitting device and method for manufacturing the same
US8080827B2 (en) * 2008-07-31 2011-12-20 Bridgelux, Inc. Top contact LED thermal management
JP5284006B2 (ja) * 2008-08-25 2013-09-11 シチズン電子株式会社 発光装置
US20120181919A1 (en) * 2008-08-27 2012-07-19 Osram Sylvania Inc. Luminescent Ceramic Composite Converter and Method of Making the Same
US8579490B2 (en) 2008-08-29 2013-11-12 Sharp Kabushiki Kaisha Backlight device and display device provided with the same
US7859190B2 (en) * 2008-09-10 2010-12-28 Bridgelux, Inc. Phosphor layer arrangement for use with light emitting diodes
JP2010067903A (ja) * 2008-09-12 2010-03-25 Toshiba Corp 発光素子
US8174100B2 (en) * 2008-09-22 2012-05-08 Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. Light source using a light-emitting diode
CN102171843B (zh) * 2008-09-26 2014-03-26 徐镇 具有光调变功能之半导体发光组件及其制造方法
CN102171844A (zh) * 2008-10-01 2011-08-31 皇家飞利浦电子股份有限公司 用于增大的光提取和非黄色的断开状态颜色的在封装剂中具有颗粒的led
US8075165B2 (en) * 2008-10-14 2011-12-13 Ledengin, Inc. Total internal reflection lens and mechanical retention and locating device
US9425172B2 (en) 2008-10-24 2016-08-23 Cree, Inc. Light emitter array
US20100117106A1 (en) * 2008-11-07 2010-05-13 Ledengin, Inc. Led with light-conversion layer
US8791471B2 (en) * 2008-11-07 2014-07-29 Cree Hong Kong Limited Multi-chip light emitting diode modules
WO2010055831A1 (ja) * 2008-11-13 2010-05-20 国立大学法人名古屋大学 半導体発光装置
JP2010129583A (ja) * 2008-11-25 2010-06-10 Citizen Electronics Co Ltd 照明装置
TW201034256A (en) 2008-12-11 2010-09-16 Illumitex Inc Systems and methods for packaging light-emitting diode devices
DE202008017960U1 (de) 2008-12-17 2011-02-10 Poly-Tech Service Gmbh LED-basiertes Beleuchtungssystem
US8507300B2 (en) * 2008-12-24 2013-08-13 Ledengin, Inc. Light-emitting diode with light-conversion layer
TWI380483B (en) * 2008-12-29 2012-12-21 Everlight Electronics Co Ltd Led device and method of packaging the same
US8368112B2 (en) 2009-01-14 2013-02-05 Cree Huizhou Opto Limited Aligned multiple emitter package
US20110037083A1 (en) * 2009-01-14 2011-02-17 Alex Chi Keung Chan Led package with contrasting face
TWI376043B (en) * 2009-01-23 2012-11-01 Everlight Electronics Co Ltd Light emitting device package structure and manufacturing method thereof
US8183575B2 (en) * 2009-01-26 2012-05-22 Bridgelux, Inc. Method and apparatus for providing a patterned electrically conductive and optically transparent or semi-transparent layer over a lighting semiconductor device
KR20100093981A (ko) * 2009-02-17 2010-08-26 엘지이노텍 주식회사 라이트 유닛
US8952717B2 (en) * 2009-02-20 2015-02-10 Qmc Co., Ltd. LED chip testing device
US8624527B1 (en) 2009-03-27 2014-01-07 Oree, Inc. Independently controllable illumination device
US8384097B2 (en) 2009-04-08 2013-02-26 Ledengin, Inc. Package for multiple light emitting diodes
US7985000B2 (en) * 2009-04-08 2011-07-26 Ledengin, Inc. Lighting apparatus having multiple light-emitting diodes with individual light-conversion layers
US8598793B2 (en) 2011-05-12 2013-12-03 Ledengin, Inc. Tuning of emitter with multiple LEDs to a single color bin
KR101004713B1 (ko) * 2009-04-22 2011-01-04 주식회사 에피밸리 디스플레이의 디밍 제어방법
US8328406B2 (en) 2009-05-13 2012-12-11 Oree, Inc. Low-profile illumination device
US8337030B2 (en) 2009-05-13 2012-12-25 Cree, Inc. Solid state lighting devices having remote luminescent material-containing element, and lighting methods
US8921876B2 (en) 2009-06-02 2014-12-30 Cree, Inc. Lighting devices with discrete lumiphor-bearing regions within or on a surface of remote elements
US20100315325A1 (en) * 2009-06-16 2010-12-16 Samsung Electronics Co., Ltd. Light source unit and display apparatus including the same
WO2011004961A2 (en) * 2009-06-24 2011-01-13 Seoul Semiconductor Co., Ltd. Light emitting device employing luminescent substances with oxyorthosilicate luminophores
US8727597B2 (en) 2009-06-24 2014-05-20 Oree, Inc. Illumination apparatus with high conversion efficiency and methods of forming the same
DE102009030205A1 (de) 2009-06-24 2010-12-30 Litec-Lp Gmbh Leuchtstoffe mit Eu(II)-dotierten silikatischen Luminophore
KR101055762B1 (ko) 2009-09-01 2011-08-11 서울반도체 주식회사 옥시오소실리케이트 발광체를 갖는 발광 물질을 채택한 발광 장치
US8415692B2 (en) 2009-07-06 2013-04-09 Cree, Inc. LED packages with scattering particle regions
JP5192078B2 (ja) * 2009-07-06 2013-05-08 シャープ株式会社 照明装置、表示装置、及びテレビジョン受像器
DE102009036462B4 (de) * 2009-08-06 2016-10-27 Trw Automotive Electronics & Components Gmbh Abgleichen des Farbortes von Leuchten und beleuchteten Bedien- oder Anzeigeeinheiten in einer gemeinsamen Umgebung
JP2011040494A (ja) * 2009-08-07 2011-02-24 Koito Mfg Co Ltd 発光モジュール
US8084780B2 (en) * 2009-08-13 2011-12-27 Semileds Optoelectronics Co. Smart integrated semiconductor light emitting system including light emitting diodes and application specific integrated circuits (ASIC)
US8598809B2 (en) 2009-08-19 2013-12-03 Cree, Inc. White light color changing solid state lighting and methods
US8449128B2 (en) 2009-08-20 2013-05-28 Illumitex, Inc. System and method for a lens and phosphor layer
US8585253B2 (en) 2009-08-20 2013-11-19 Illumitex, Inc. System and method for color mixing lens array
TWI361216B (en) * 2009-09-01 2012-04-01 Ind Tech Res Inst Phosphors, fabricating method thereof, and light emitting device employing the same
TWI528604B (zh) * 2009-09-15 2016-04-01 無限科技全球公司 發光、光伏或其它電子裝置及系統
US8678618B2 (en) * 2009-09-25 2014-03-25 Toshiba Lighting & Technology Corporation Self-ballasted lamp having a light-transmissive member in contact with light emitting elements and lighting equipment incorporating the same
KR20120094477A (ko) 2009-09-25 2012-08-24 크리, 인코포레이티드 낮은 눈부심 및 높은 광도 균일성을 갖는 조명 장치
US8593040B2 (en) 2009-10-02 2013-11-26 Ge Lighting Solutions Llc LED lamp with surface area enhancing fins
TWI403003B (zh) * 2009-10-02 2013-07-21 Chi Mei Lighting Tech Corp 發光二極體及其製造方法
DE202009016962U1 (de) 2009-10-13 2010-05-12 Merck Patent Gmbh Leuchtstoffmischungen
US9157025B2 (en) 2009-10-13 2015-10-13 Merck Patent Gmbh Phosphor mixtures comprising europium-doped ortho-silicates
US9435493B2 (en) 2009-10-27 2016-09-06 Cree, Inc. Hybrid reflector system for lighting device
CN102668137A (zh) * 2009-12-04 2012-09-12 安纳托利·维斯耶维奇·维亚克夫 固态白色光源复合发光材料
US8466611B2 (en) 2009-12-14 2013-06-18 Cree, Inc. Lighting device with shaped remote phosphor
US8536615B1 (en) 2009-12-16 2013-09-17 Cree, Inc. Semiconductor device structures with modulated and delta doping and related methods
US8604461B2 (en) * 2009-12-16 2013-12-10 Cree, Inc. Semiconductor device structures with modulated doping and related methods
US8303141B2 (en) * 2009-12-17 2012-11-06 Ledengin, Inc. Total internal reflection lens with integrated lamp cover
US8511851B2 (en) 2009-12-21 2013-08-20 Cree, Inc. High CRI adjustable color temperature lighting devices
TWI461626B (zh) * 2009-12-28 2014-11-21 Chi Mei Comm Systems Inc 光源裝置及具有該光源裝置之可攜式電子裝置
WO2011096837A1 (ru) * 2010-02-05 2011-08-11 Общество с ограниченной ответственностью "ДиС ПЛЮС" Способ создания светоизлучающей поверхности и осветительное устройство для реализации способа
JP5257622B2 (ja) * 2010-02-26 2013-08-07 東芝ライテック株式会社 電球形ランプおよび照明器具
US9275979B2 (en) 2010-03-03 2016-03-01 Cree, Inc. Enhanced color rendering index emitter through phosphor separation
CN102192422B (zh) * 2010-03-12 2014-06-25 四川新力光源股份有限公司 白光led照明装置
CN102194970B (zh) * 2010-03-12 2014-06-25 四川新力光源股份有限公司 脉冲电流驱动的白光led照明装置
WO2011115515A1 (ru) 2010-03-16 2011-09-22 Общество с ограниченной ответственностью "ДиС ПЛЮС" Способ управления цветностью светового потока белого светодиода и устройство для его осуществления способа
WO2011123538A2 (en) 2010-03-31 2011-10-06 Osram Sylvania Inc. Phosphor and leds containing same
US9080729B2 (en) 2010-04-08 2015-07-14 Ledengin, Inc. Multiple-LED emitter for A-19 lamps
US8858022B2 (en) 2011-05-05 2014-10-14 Ledengin, Inc. Spot TIR lens system for small high-power emitter
US9345095B2 (en) 2010-04-08 2016-05-17 Ledengin, Inc. Tunable multi-LED emitter module
US8329482B2 (en) 2010-04-30 2012-12-11 Cree, Inc. White-emitting LED chips and method for making same
KR101298406B1 (ko) * 2010-05-17 2013-08-20 엘지이노텍 주식회사 발광소자
TWI422073B (zh) * 2010-05-26 2014-01-01 Interlight Optotech Corp 發光二極體封裝結構
US8684559B2 (en) 2010-06-04 2014-04-01 Cree, Inc. Solid state light source emitting warm light with high CRI
DE102010030473A1 (de) * 2010-06-24 2011-12-29 Osram Gesellschaft mit beschränkter Haftung Leuchtstoff und Lichtquelle mit derartigem Leuchtstoff
WO2011162634A1 (ru) * 2010-06-25 2011-12-29 Общество с ограниченной ответственностью "ДиС ПЛЮС" Светодиодная лампа
EP2402648A1 (en) * 2010-07-01 2012-01-04 Koninklijke Philips Electronics N.V. TL retrofit LED module outside sealed glass tube
DE102010026344A1 (de) * 2010-07-07 2012-01-12 Osram Opto Semiconductors Gmbh Leuchtdiode
US8835199B2 (en) * 2010-07-28 2014-09-16 GE Lighting Solutions, LLC Phosphor suspended in silicone, molded/formed and used in a remote phosphor configuration
WO2012018277A1 (ru) * 2010-08-04 2012-02-09 Общество с ограниченной ответственностью "ДиС ПЛЮС" Осветительное устройство
DE102010034322A1 (de) * 2010-08-14 2012-02-16 Litec-Lp Gmbh Oberflächenmodifizierter Silikatleuchtstoffe
RU2444676C1 (ru) * 2010-08-16 2012-03-10 Владимир Семенович Абрамов Светодиодный источник излучения
US8568009B2 (en) * 2010-08-20 2013-10-29 Dicon Fiberoptics Inc. Compact high brightness LED aquarium light apparatus, using an extended point source LED array with light emitting diodes
US8523385B2 (en) 2010-08-20 2013-09-03 DiCon Fibêroptics Inc. Compact high brightness LED grow light apparatus, using an extended point source LED array with light emitting diodes
JP5127965B2 (ja) 2010-09-02 2013-01-23 株式会社東芝 蛍光体およびそれを用いた発光装置
KR20120024104A (ko) * 2010-09-06 2012-03-14 서울옵토디바이스주식회사 발광 소자
DE102010041236A1 (de) * 2010-09-23 2012-03-29 Osram Ag Optoelektronisches Halbleiterbauelement
US9070851B2 (en) 2010-09-24 2015-06-30 Seoul Semiconductor Co., Ltd. Wafer-level light emitting diode package and method of fabricating the same
CN102130254B (zh) * 2010-09-29 2015-03-11 映瑞光电科技(上海)有限公司 发光装置及其制造方法
US8357553B2 (en) 2010-10-08 2013-01-22 Guardian Industries Corp. Light source with hybrid coating, device including light source with hybrid coating, and/or methods of making the same
EP2447338B1 (en) * 2010-10-26 2012-09-26 Leuchtstoffwerk Breitungen GmbH Borophosphate phosphor and light source
US9024341B2 (en) * 2010-10-27 2015-05-05 Taiwan Semiconductor Manufacturing Company, Ltd. Refractive index tuning of wafer level package LEDs
US9648673B2 (en) 2010-11-05 2017-05-09 Cree, Inc. Lighting device with spatially segregated primary and secondary emitters
EA029315B1 (ru) * 2010-11-08 2018-03-30 Август Геннадьевич КРАСНОВ Светодиод-лампа, светодиод с нормированной яркостью, мощный чип для светодиода
WO2012070565A1 (ja) * 2010-11-22 2012-05-31 宇部マテリアルズ株式会社 高い発光特性と耐湿性とを示すケイ酸塩蛍光体及び発光装置
DE102010055265A1 (de) * 2010-12-20 2012-06-21 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauteil
US9159885B2 (en) * 2010-12-29 2015-10-13 3M Innovative Properties Company Remote phosphor LED device with broadband output and controllable color
KR101719636B1 (ko) * 2011-01-28 2017-04-05 삼성전자 주식회사 반도체 장치 및 그 제조 방법
US9786811B2 (en) 2011-02-04 2017-10-10 Cree, Inc. Tilted emission LED array
CN102130282A (zh) * 2011-02-12 2011-07-20 西安神光安瑞光电科技有限公司 白光led封装结构及封装方法
US11251164B2 (en) 2011-02-16 2022-02-15 Creeled, Inc. Multi-layer conversion material for down conversion in solid state lighting
WO2012125585A1 (en) 2011-03-11 2012-09-20 Intematix Corporation Millisecond decay phosphors for ac led lighting applications
CN102683543B (zh) * 2011-03-15 2015-08-12 展晶科技(深圳)有限公司 Led封装结构
US8906264B2 (en) 2011-03-18 2014-12-09 Merck Patent Gmbh Silicate phosphors
DE102011016567B4 (de) * 2011-04-08 2023-05-11 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zum Herstellen eines optoelektronischen Bauelements und derart hergestelltes Bauelement
US8596815B2 (en) 2011-04-15 2013-12-03 Dicon Fiberoptics Inc. Multiple wavelength LED array illuminator for fluorescence microscopy
US8979316B2 (en) 2011-05-11 2015-03-17 Dicon Fiberoptics Inc. Zoom spotlight using LED array
US8513900B2 (en) 2011-05-12 2013-08-20 Ledengin, Inc. Apparatus for tuning of emitter with multiple LEDs to a single color bin
KR101793518B1 (ko) * 2011-05-19 2017-11-03 삼성전자주식회사 적색 형광체 및 이를 포함하는 발광장치
US8986842B2 (en) 2011-05-24 2015-03-24 Ecole Polytechnique Federale De Lausanne (Epfl) Color conversion films comprising polymer-substituted organic fluorescent dyes
JP5863291B2 (ja) * 2011-06-28 2016-02-16 株式会社小糸製作所 平面発光モジュール
JP5772292B2 (ja) * 2011-06-28 2015-09-02 セイコーエプソン株式会社 生体センサーおよび生体情報検出装置
TWM418399U (en) * 2011-07-04 2011-12-11 Azurewave Technologies Inc Upright Stacked Light-emitting 2 LED structure
US10842016B2 (en) 2011-07-06 2020-11-17 Cree, Inc. Compact optically efficient solid state light source with integrated thermal management
USD700584S1 (en) 2011-07-06 2014-03-04 Cree, Inc. LED component
DE102011107893A1 (de) * 2011-07-18 2013-01-24 Heraeus Noblelight Gmbh Optoelektronisches Modul mit verbesserter Optik
US10686107B2 (en) 2011-07-21 2020-06-16 Cree, Inc. Light emitter devices and components with improved chemical resistance and related methods
JP2014525146A (ja) 2011-07-21 2014-09-25 クリー インコーポレイテッド 発光デバイス、パッケージ、部品、ならびに改良された化学抵抗性のための方法および関連する方法
US10211380B2 (en) 2011-07-21 2019-02-19 Cree, Inc. Light emitting devices and components having improved chemical resistance and related methods
KR101772588B1 (ko) * 2011-08-22 2017-09-13 한국전자통신연구원 클리어 컴파운드 에폭시로 몰딩한 ｍｉｔ 소자 및 그것을 포함하는 화재 감지 장치
JP5634352B2 (ja) 2011-08-24 2014-12-03 株式会社東芝 蛍光体、発光装置および蛍光体の製造方法
US8410508B1 (en) * 2011-09-12 2013-04-02 SemiLEDs Optoelectronics Co., Ltd. Light emitting diode (LED) package having wavelength conversion member and wafer level fabrication method
CN103000794B (zh) * 2011-09-14 2015-06-10 展晶科技(深圳)有限公司 Led封装结构
JP5533827B2 (ja) * 2011-09-20 2014-06-25 豊田合成株式会社 線状光源装置
US9070831B2 (en) 2011-10-11 2015-06-30 Panasonic Intellectual Property Management Co., Ltd. Light-emitting device each having variable distances between pairs of electrode pads with respect to Zener diodes and lighting apparatus using the same
US20140347601A1 (en) * 2011-10-28 2014-11-27 Gary Gibson Luminescent layer with up-converting luminophores
US8591072B2 (en) 2011-11-16 2013-11-26 Oree, Inc. Illumination apparatus confining light by total internal reflection and methods of forming the same
JP2013110154A (ja) * 2011-11-17 2013-06-06 Sanken Electric Co Ltd 発光装置
KR101323246B1 (ko) * 2011-11-21 2013-10-30 헤레우스 머티어리얼즈 테크놀로지 게엠베하 운트 코 카게 반도체 소자용 본딩 와이어, 그 제조방법, 반도체 소자용 본딩 와이어를 포함하는 발광다이오드 패키지
CN104115290B (zh) 2011-11-23 2017-04-05 夸克星有限责任公司 提供光的不对称传播的发光装置
US9496466B2 (en) 2011-12-06 2016-11-15 Cree, Inc. Light emitter devices and methods, utilizing light emitting diodes (LEDs), for improved light extraction
KR101894040B1 (ko) * 2011-12-06 2018-10-05 서울반도체 주식회사 엘이디 조명장치
RU2503884C2 (ru) * 2011-12-15 2014-01-10 Общество с ограниченной ответственностью "ДиС ПЛЮС" Система стационарного освещения и светоизлучающее устройство для этой системы
RU2502917C2 (ru) * 2011-12-30 2013-12-27 Закрытое Акционерное Общество "Научно-Производственная Коммерческая Фирма "Элтан Лтд" Светодиодный источник белого света с комбинированным удаленным фотолюминесцентным конвертером
US20130178001A1 (en) * 2012-01-06 2013-07-11 Wen-Lung Chin Method for Making LED LAMP
WO2013112542A1 (en) * 2012-01-25 2013-08-01 Intematix Corporation Long decay phosphors for lighting applications
US8801213B2 (en) * 2012-01-26 2014-08-12 Panasonic Corporation Lighting device having first and second organic electroluminescence element modules
CN103242839B (zh) * 2012-02-08 2015-06-10 威士玻尔光电(苏州)有限公司 蓝光激发黄绿色铝酸盐荧光粉生产方法
US9240530B2 (en) * 2012-02-13 2016-01-19 Cree, Inc. Light emitter devices having improved chemical and physical resistance and related methods
US9343441B2 (en) 2012-02-13 2016-05-17 Cree, Inc. Light emitter devices having improved light output and related methods
US11032884B2 (en) 2012-03-02 2021-06-08 Ledengin, Inc. Method for making tunable multi-led emitter module
KR20150023225A (ko) 2012-03-06 2015-03-05 닛토덴코 가부시키가이샤 발광 디바이스들을 위한 세라믹 본체
US9897284B2 (en) 2012-03-28 2018-02-20 Ledengin, Inc. LED-based MR16 replacement lamp
EP2831932B1 (en) 2012-03-30 2020-09-30 Lumileds Holding B.V. Light emitting device with wavelength converting side coat
US9500355B2 (en) 2012-05-04 2016-11-22 GE Lighting Solutions, LLC Lamp with light emitting elements surrounding active cooling device
US9546319B2 (en) * 2012-05-22 2017-01-17 Koninklijke Philips N.V. Phosphors, such as new narrow-band red emitting phosphors for solid state lighting
CN102664230A (zh) * 2012-05-29 2012-09-12 邓崛 Led发光装置及其制造方法
CN103453333A (zh) * 2012-05-30 2013-12-18 致茂电子(苏州)有限公司 具有连续光谱的发光二极管光源
CN103511871A (zh) * 2012-06-29 2014-01-15 展晶科技(深圳)有限公司 发光二极管灯具
US9857519B2 (en) 2012-07-03 2018-01-02 Oree Advanced Illumination Solutions Ltd. Planar remote phosphor illumination apparatus
CN102757784B (zh) * 2012-07-20 2014-05-07 江苏博睿光电有限公司 一种硅酸盐红色荧光粉及其制备方法
JP5578739B2 (ja) 2012-07-30 2014-08-27 住友金属鉱山株式会社 アルカリ土類金属シリケート蛍光体及びその製造方法
US9305439B2 (en) * 2012-10-25 2016-04-05 Google Inc. Configurable indicator on computing device
CN103837945A (zh) * 2012-11-28 2014-06-04 浜松光子学株式会社 单芯光收发器
RU2628014C2 (ru) * 2012-12-06 2017-08-17 Евгений Михайлович Силкин Световой прибор
TWI578573B (zh) * 2013-01-28 2017-04-11 Harvatek Corp A plurality of blue light emitting diodes in white light
US9133990B2 (en) 2013-01-31 2015-09-15 Dicon Fiberoptics Inc. LED illuminator apparatus, using multiple luminescent materials dispensed onto an array of LEDs, for improved color rendering, color mixing, and color temperature control
US9235039B2 (en) 2013-02-15 2016-01-12 Dicon Fiberoptics Inc. Broad-spectrum illuminator for microscopy applications, using the emissions of luminescent materials
JP2014160772A (ja) * 2013-02-20 2014-09-04 Toshiba Lighting & Technology Corp 発光装置および照明装置
US9234801B2 (en) 2013-03-15 2016-01-12 Ledengin, Inc. Manufacturing method for LED emitter with high color consistency
CN103203470B (zh) * 2013-05-13 2015-04-01 兰州理工大学 镍基荧光粒子功能指示复合涂层及其制备方法
JP5861047B2 (ja) * 2013-05-14 2016-02-16 パナソニックＩｐマネジメント株式会社 蛍光体および当該蛍光体を用いた発光装置、ならびに当該発光装置を備える投影装置および車両
KR102096053B1 (ko) * 2013-07-25 2020-04-02 삼성디스플레이 주식회사 유기발광표시장치의 제조방법
KR20160061393A (ko) * 2013-09-26 2016-05-31 코닌클리케 필립스 엔.브이. 고체 상태 조명을 위한 새로운 니트리도알루모실리케이트 형광체
JP6323020B2 (ja) * 2014-01-20 2018-05-16 セイコーエプソン株式会社 光源装置およびプロジェクター
US9406654B2 (en) 2014-01-27 2016-08-02 Ledengin, Inc. Package for high-power LED devices
KR20150122360A (ko) * 2014-04-23 2015-11-02 (주)라이타이저코리아 발광 소자 패키지 및 그의 제조 방법
US9601670B2 (en) 2014-07-11 2017-03-21 Cree, Inc. Method to form primary optic with variable shapes and/or geometries without a substrate
US10622522B2 (en) 2014-09-05 2020-04-14 Theodore Lowes LED packages with chips having insulated surfaces
RU2648080C1 (ru) * 2014-09-11 2018-03-22 Филипс Лайтинг Холдинг Б.В. Сид-модуль с преобразованием люминофором с улучшенными передачей белого цвета и эффективностью преобразования
JP6563495B2 (ja) 2014-11-26 2019-08-21 エルイーディエンジン・インコーポレーテッド 穏やかな調光及び色調整可能なランプ用のコンパクトなｌｅｄエミッタ
US9530943B2 (en) 2015-02-27 2016-12-27 Ledengin, Inc. LED emitter packages with high CRI
US10658552B2 (en) 2015-03-24 2020-05-19 Koninklijke Philips N.V. Blue emitting phosphor converted LED with blue pigment
DE202015103126U1 (de) * 2015-06-15 2016-09-19 Tridonic Jennersdorf Gmbh LED-Modul
US9735323B2 (en) * 2015-06-30 2017-08-15 Nichia Corporation Light emitting device having a triple phosphor fluorescent member
CN105087003B (zh) * 2015-09-02 2017-05-17 中国科学院长春应用化学研究所 一种橙黄光led荧光粉、其制备方法及其应用
US9478587B1 (en) 2015-12-22 2016-10-25 Dicon Fiberoptics Inc. Multi-layer circuit board for mounting multi-color LED chips into a uniform light emitter
CN108495898B (zh) 2016-01-14 2020-10-27 巴斯夫欧洲公司 具有刚性2，2’-联苯氧基桥接的苝双酰亚胺
RU2639554C2 (ru) * 2016-03-01 2017-12-21 Николай Евгеньевич Староверов Герметичный светодиодный кластер повышенной эффективности (варианты)
CN205944139U (zh) 2016-03-30 2017-02-08 首尔伟傲世有限公司 紫外线发光二极管封装件以及包含此的发光二极管模块
FR3053757B1 (fr) * 2016-07-05 2020-07-17 Valeo Vision Dispositif d'eclairage et/ou de signalisation pour vehicule automobile
DE102016116439A1 (de) * 2016-09-02 2018-03-08 Osram Opto Semiconductors Gmbh Anordnung mit einem Gehäuse mit einem strahlungsemittierenden optoelektronischen Bauelement
US11441036B2 (en) 2016-10-06 2022-09-13 Basf Se 2-phenylphenoxy-substituted perylene bisimide compounds and their use
JP6932910B2 (ja) 2016-10-27 2021-09-08 船井電機株式会社 表示装置
KR101831899B1 (ko) * 2016-11-02 2018-02-26 에스케이씨 주식회사 다층 광학 필름 및 이를 포함하는 표시장치
US10219345B2 (en) 2016-11-10 2019-02-26 Ledengin, Inc. Tunable LED emitter with continuous spectrum
JP6940764B2 (ja) 2017-09-28 2021-09-29 日亜化学工業株式会社 発光装置
CN108063176A (zh) * 2017-10-30 2018-05-22 东莞市豪顺精密科技有限公司 一种蓝光led灯及其制造工艺和应用
JP6645488B2 (ja) * 2017-11-09 2020-02-14 信越半導体株式会社 半導体型蛍光体
KR102428755B1 (ko) * 2017-11-24 2022-08-02 엘지디스플레이 주식회사 파장 변환이 가능한 광섬유 및 이를 사용하는 백라이트 유닛
KR20200100702A (ko) 2017-12-19 2020-08-26 바스프 에스이 시아노아릴 치환된 벤즈(오티)오크산텐 화합물
CN108198809B (zh) * 2018-01-02 2020-01-07 广东纬达斯电器有限公司 一种led照明装置
US10575374B2 (en) 2018-03-09 2020-02-25 Ledengin, Inc. Package for flip-chip LEDs with close spacing of LED chips
TWI821256B (zh) 2018-03-20 2023-11-11 德商巴地斯顏料化工廠 黃光發射裝置、其用途及提供黃光之方法
US11184967B2 (en) 2018-05-07 2021-11-23 Zane Coleman Angularly varying light emitting device with an imager
US10816939B1 (en) 2018-05-07 2020-10-27 Zane Coleman Method of illuminating an environment using an angularly varying light emitting device and an imager
KR102372498B1 (ko) * 2018-12-17 2022-03-10 박신애 발광장치를 구비하는 조립식 화장실용 패널
US11313671B2 (en) 2019-05-28 2022-04-26 Mitutoyo Corporation Chromatic confocal range sensing system with enhanced spectrum light source configuration
CN114026201B (zh) * 2019-06-28 2023-10-20 电化株式会社 荧光体板和使用该荧光体板的发光装置
US11112555B2 (en) 2019-09-30 2021-09-07 Nichia Corporation Light-emitting module with a plurality of light guide plates and a gap therein
US11561338B2 (en) 2019-09-30 2023-01-24 Nichia Corporation Light-emitting module
US11592166B2 (en) 2020-05-12 2023-02-28 Feit Electric Company, Inc. Light emitting device having improved illumination and manufacturing flexibility
US11876042B2 (en) 2020-08-03 2024-01-16 Feit Electric Company, Inc. Omnidirectional flexible light emitting device
KR102599819B1 (ko) 2022-01-20 2023-11-08 미쯔비시 케미컬 주식회사 형광체, 발광 장치, 조명 장치, 화상 표시 장치 및 차량용 표시등
EP4293732A1 (en) 2022-01-20 2023-12-20 Mitsubishi Chemical Corporation Phosphor, light-emitting device, lighting device, image display device, and indicator lamp for vehicles

Family Cites Families (78)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB544160A (en) * 1940-08-27 1942-03-31 Gen Electric Co Ltd Improvements in luminescent materials
US3505240A (en) * 1966-12-30 1970-04-07 Sylvania Electric Prod Phosphors and their preparation
US4088923A (en) * 1974-03-15 1978-05-09 U.S. Philips Corporation Fluorescent lamp with superimposed luminescent layers
JPS5241484A (en) * 1975-09-25 1977-03-31 Gen Electric Fluorescent lamp structure using two kinds of phospher
JPS5944337B2 (ja) 1978-03-08 1984-10-29 三菱電機株式会社 螢光体
JPS57160381A (en) * 1981-03-25 1982-10-02 Matsushita Electric Ind Co Ltd Speed controlling device of direct current motor
JPS59226088A (ja) 1983-06-07 1984-12-19 Toshiba Corp 緑色発光螢光体
JPS6013882A (ja) 1983-07-05 1985-01-24 Matsushita Electronics Corp 螢光体
US4661419A (en) * 1984-07-31 1987-04-28 Fuji Photo Film Co., Ltd. Phosphor and radiation image storage panel containing the same
JPS6244792A (ja) 1985-08-22 1987-02-26 三菱電機株式会社 Ｃｒｔデイスプレイ装置
JPS62277488A (ja) 1986-05-27 1987-12-02 Toshiba Corp 緑色発光螢光体
US5226053A (en) * 1991-12-27 1993-07-06 At&T Bell Laboratories Light emitting diode
EP0550937B1 (en) † 1992-01-07 1997-03-19 Koninklijke Philips Electronics N.V. Low-pressure mercury discharge lamp
JP3215722B2 (ja) * 1992-08-14 2001-10-09 エヌイーシー三菱電機ビジュアルシステムズ株式会社 計測波形判定方法
US6013199A (en) * 1997-03-04 2000-01-11 Symyx Technologies Phosphor materials
US5670798A (en) * 1995-03-29 1997-09-23 North Carolina State University Integrated heterostructures of Group III-V nitride semiconductor materials including epitaxial ohmic contact non-nitride buffer layer and methods of fabricating same
DE19629920B4 (de) * 1995-08-10 2006-02-02 LumiLeds Lighting, U.S., LLC, San Jose Licht-emittierende Diode mit einem nicht-absorbierenden verteilten Braggreflektor
JP3209096B2 (ja) * 1996-05-21 2001-09-17 豊田合成株式会社 ３族窒化物化合物半導体発光素子
JP3164016B2 (ja) * 1996-05-31 2001-05-08 住友電気工業株式会社 発光素子および発光素子用ウエハの製造方法
DE19638667C2 (de) 1996-09-20 2001-05-17 Osram Opto Semiconductors Gmbh Mischfarbiges Licht abstrahlendes Halbleiterbauelement mit Lumineszenzkonversionselement
EP1439586B1 (de) * 1996-06-26 2014-03-12 OSRAM Opto Semiconductors GmbH Licht abstrahlendes Halbleiterbauelement mit Lumineszenzkonversionselement
TW383508B (en) * 1996-07-29 2000-03-01 Nichia Kagaku Kogyo Kk Light emitting device and display
JPH1056236A (ja) * 1996-08-08 1998-02-24 Toyoda Gosei Co Ltd ３族窒化物半導体レーザ素子
JP3065258B2 (ja) 1996-09-30 2000-07-17 日亜化学工業株式会社 発光装置及びそれを用いた表示装置
JP4024892B2 (ja) * 1996-12-24 2007-12-19 化成オプトニクス株式会社 蓄光性発光素子
JP3706452B2 (ja) * 1996-12-24 2005-10-12 ローム株式会社 半導体発光素子
KR100491482B1 (ko) * 1997-01-09 2005-05-27 니치아 카가쿠 고교 가부시키가이샤 질화물반도체소자
CA2276335C (en) 1997-01-09 2006-04-11 Nichia Chemical Industries, Ltd. Nitride semiconductor device
US6274890B1 (en) * 1997-01-15 2001-08-14 Kabushiki Kaisha Toshiba Semiconductor light emitting device and its manufacturing method
JP2000509912A (ja) * 1997-03-03 2000-08-02 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 白色光発光ダイオード
JP3246386B2 (ja) 1997-03-05 2002-01-15 日亜化学工業株式会社 発光ダイオード及び発光ダイオード用の色変換モールド部材
JP3378465B2 (ja) * 1997-05-16 2003-02-17 株式会社東芝 発光装置
US5813753A (en) * 1997-05-27 1998-09-29 Philips Electronics North America Corporation UV/blue led-phosphor device with efficient conversion of UV/blues light to visible light
DE19730006A1 (de) * 1997-07-12 1999-01-14 Walter Dipl Chem Dr Rer N Tews Kompakte Energiesparlampe mit verbesserter Farbwiedergabe
US5847507A (en) † 1997-07-14 1998-12-08 Hewlett-Packard Company Fluorescent dye added to epoxy of light emitting diode lens
JP3257455B2 (ja) 1997-07-17 2002-02-18 松下電器産業株式会社 発光装置
US5982092A (en) * 1997-10-06 1999-11-09 Chen; Hsing Light Emitting Diode planar light source with blue light or ultraviolet ray-emitting luminescent crystal with optional UV filter
US6267911B1 (en) * 1997-11-07 2001-07-31 University Of Georgia Research Foundation, Inc. Phosphors with long-persistent green phosphorescence
JP3627478B2 (ja) * 1997-11-25 2005-03-09 松下電工株式会社 光源装置
CN1086727C (zh) * 1998-01-14 2002-06-26 中日合资无锡帕克斯装饰制品有限公司 细颗粒蓄光性荧光粉及其制备方法
JP2924961B1 (ja) 1998-01-16 1999-07-26 サンケン電気株式会社 半導体発光装置及びその製法
JP3612985B2 (ja) * 1998-02-02 2005-01-26 豊田合成株式会社 窒化ガリウム系化合物半導体素子及びその製造方法
US6252254B1 (en) * 1998-02-06 2001-06-26 General Electric Company Light emitting device with phosphor composition
US6255670B1 (en) * 1998-02-06 2001-07-03 General Electric Company Phosphors for light generation from light emitting semiconductors
DE19806213B4 (de) 1998-02-16 2005-12-01 Tews, Walter, Dipl.-Chem. Dr.rer.nat.habil. Kompakte Energiesparlampe
JPH11233832A (ja) 1998-02-17 1999-08-27 Nichia Chem Ind Ltd 発光ダイオードの形成方法
US6501091B1 (en) * 1998-04-01 2002-12-31 Massachusetts Institute Of Technology Quantum dot white and colored light emitting diodes
US6046465A (en) * 1998-04-17 2000-04-04 Hewlett-Packard Company Buried reflectors for light emitters in epitaxial material and method for producing same
JPH11354848A (ja) 1998-06-10 1999-12-24 Matsushita Electron Corp 半導体発光装置
JP2907286B1 (ja) * 1998-06-26 1999-06-21 サンケン電気株式会社 蛍光カバーを有する樹脂封止型半導体発光装置
JP2000029696A (ja) 1998-07-08 2000-01-28 Sony Corp プロセッサおよびパイプライン処理制御方法
JP3486345B2 (ja) * 1998-07-14 2004-01-13 東芝電子エンジニアリング株式会社 半導体発光装置
TW473429B (en) * 1998-07-22 2002-01-21 Novartis Ag Method for marking a laminated film material
JP3584163B2 (ja) * 1998-07-27 2004-11-04 サンケン電気株式会社 半導体発光装置の製造方法
US5959316A (en) * 1998-09-01 1999-09-28 Hewlett-Packard Company Multiple encapsulation of phosphor-LED devices
WO2000019546A1 (en) * 1998-09-28 2000-04-06 Koninklijke Philips Electronics N.V. Lighting system
US6153894A (en) 1998-11-12 2000-11-28 Showa Denko Kabushiki Kaisha Group-III nitride semiconductor light-emitting device
JP2000150966A (ja) 1998-11-16 2000-05-30 Matsushita Electronics Industry Corp 半導体発光装置及びその製造方法
US6429583B1 (en) 1998-11-30 2002-08-06 General Electric Company Light emitting device with ba2mgsi2o7:eu2+, ba2sio4:eu2+, or (srxcay ba1-x-y)(a1zga1-z)2sr:eu2+phosphors
JP3708730B2 (ja) 1998-12-01 2005-10-19 三菱電線工業株式会社 発光装置
US6656608B1 (en) * 1998-12-25 2003-12-02 Konica Corporation Electroluminescent material, electroluminescent element and color conversion filter
JP2000208822A (ja) * 1999-01-11 2000-07-28 Matsushita Electronics Industry Corp 半導体発光装置
US6351069B1 (en) * 1999-02-18 2002-02-26 Lumileds Lighting, U.S., Llc Red-deficiency-compensating phosphor LED
JP2000248280A (ja) 1999-02-26 2000-09-12 Yoshitaka Tateiwa 粗骨材の製造に関する土壌改良材及び製造する方法
JP3349111B2 (ja) 1999-03-15 2002-11-20 株式会社シチズン電子 表面実装型発光ダイオード及びその製造方法
JP2000284280A (ja) 1999-03-29 2000-10-13 Rohm Co Ltd 面状光源
EP1167872A4 (en) 1999-03-29 2002-07-31 Rohm Co Ltd PLANE LIGHT SOURCE
JP2000349345A (ja) 1999-06-04 2000-12-15 Matsushita Electronics Industry Corp 半導体発光装置
JP3337000B2 (ja) 1999-06-07 2002-10-21 サンケン電気株式会社 半導体発光装置
JP2000345152A (ja) * 1999-06-07 2000-12-12 Nichia Chem Ind Ltd 黄色発光残光性フォトルミネッセンス蛍光体
US6696703B2 (en) * 1999-09-27 2004-02-24 Lumileds Lighting U.S., Llc Thin film phosphor-converted light emitting diode device
EP1104799A1 (en) * 1999-11-30 2001-06-06 Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH Red emitting luminescent material
JP2001217461A (ja) * 2000-02-04 2001-08-10 Matsushita Electric Ind Co Ltd 複合発光素子
US6621211B1 (en) * 2000-05-15 2003-09-16 General Electric Company White light emitting phosphor blends for LED devices
US6577073B2 (en) * 2000-05-31 2003-06-10 Matsushita Electric Industrial Co., Ltd. Led lamp
DE10036940A1 (de) 2000-07-28 2002-02-07 Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh Lumineszenz-Konversions-LED
AT410266B (de) * 2000-12-28 2003-03-25 Tridonic Optoelectronics Gmbh Lichtquelle mit einem lichtemittierenden element
JP2003282744A (ja) 2002-03-22 2003-10-03 Seiko Epson Corp 不揮発性記憶装置

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