CN108063176A - 一种蓝光led灯及其制造工艺和应用 - Google Patents
一种蓝光led灯及其制造工艺和应用 Download PDFInfo
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Abstract
本发明涉及LED灯技术领域,具体涉及一种蓝光LED灯及其制造工艺和应用,蓝光LED芯片结构包括了支架、设于支架内的蓝光LED芯片,支架上设有与外电路电连接的金属导电体,蓝光LED芯片通过金线与所述金属导电体连接,蓝光LED芯片的外表面封装有红绿荧光封装胶;蓝光LED芯片包括下往上依次层叠金属反射层、蓝宝石衬底、n‑GaN层、MOW层、P‑GaN层和ITO层,ITO层上设置P电极,P‑GaN层上设置N电极,所述红绿荧光封装胶由红绿荧光粉与环氧树脂混合而成,该蓝光LED灯具有防有害蓝光的效果,其制造工艺具有易于操作的优点,该蓝光LED灯可在电视背光源中应用。
Description
技术领域
本发明涉及LED灯技术领域,具体涉及一种蓝光LED灯及其制造工艺和应用。
背景技术
随着液晶显示技术的不断发展,液晶电视特别是彩色液晶电视的应用领域也在不断拓宽,液晶电视所涉及的一个重要部份是背光源。目前液晶电视行业上采用的TV背光灯条产品是普通波长为415nm~455nm区间的LED灯,该波长范围的可见光包括大量对人体有害的蓝紫光。根据研究,蓝光波长越短,其对视网膜细胞的伤害最大,会造成人眼细胞生存力下降、细胞坏死、细胞凋亡的问题。因而,需要减少液晶电视或液晶显示的有害蓝光,以保护用户视力。
发明内容
针对现有技术存在上述技术问题,本发明目的之一在于提供一种能够减少短波长的蓝光LED灯,该蓝光LED灯具有结构简单、防蓝光伤害视网膜的优点。
本发明的目的之二在于提供一种能够制出有上述优点蓝光LED灯的制造工艺,该制造工艺具有工艺简单的优点。
本发明的目的之三在于提供上述蓝光LED灯的应用。
为实现上述目的之一,本发明提供以下技术方案:
提供一种蓝光LED灯,包括支架、设于所述支架内的蓝光LED芯片,所述支架上设有与外电路电连接的金属导电体,所述蓝光LED芯片通过金线与所述金属导电体连接,所述蓝光LED芯片的外表面封装有红绿荧光封装胶;所述蓝光LED芯片包括由下往上依次层叠的金属反射层、蓝宝石衬底、n-GaN层、MOW层、P-GaN层和ITO层,所述ITO层上设置P电极,所述P-GaN层上设置N电极;其中,所述红绿荧光封装胶包括红绿荧光粉和环氧树脂。
其中,所述金属反射层的厚度为100~200nm、所述蓝宝石衬底的厚度为100~200μm、所述n-GaN层的厚度为1~5μm、所述MOW层的厚度为40~60nm、所述P-GaN层厚度为 500~700nm和所述ITO层的厚度为150~300nm。
其中,所述金属反射层的厚度为150nm、所述蓝宝石衬底的厚度为150μm、所述n-GaN 层的厚度为3μm、所述MOW层的厚度为50nm、所述P-GaN层厚度为600nm和所述ITO 层的厚度为230nm。
其中,所述支架设有腔体,所述金属导电体固定于所述腔体的内底部并伸出所述支架外部,所述蓝光LED芯片固定在所述腔体底部且通过金线与位于腔体内的金属导电体连接。
其中,所述红绿荧光封装胶填满所述支架的腔体。
为实现上述目的之二,本发明提供以下技术方案:
提供上述一种蓝光LED灯的制造工艺,包括以下制备步骤:
提供一种蓝光LED灯的制造工艺,包括以下制备步骤:
第一步、蓝光LED芯片的制备
把蓝宝石衬底送入外延炉,在所述蓝宝石衬底上依次生长n-GaN层、MOV层、P-GaN层、ITO层,冷却外延炉,然后在ITO层上固定P电极以及在P-GaN层上连接有N电极,再在蓝宝石衬底的底面粘贴金属反射层,制得蓝光LED芯片;
第二步、LED封装
步骤一、固晶:使用固晶胶把所制得的蓝光LED芯片固定于支架内,然后烘烤固晶胶,完成固晶;
步骤二、焊线:使用金线把蓝光LED芯片的P电极和N电极分别与所述金属导电体连接;
步骤三、封胶
1、配胶:把红绿荧光粉与LED封装胶混合搅拌;
2、点胶:将所制得的红绿荧光封装胶点胶在所述蓝光LED芯片上,使得LED蓝光芯片的外表面封装红绿荧光封装胶且所述红绿荧光封装胶填充于所述支架的腔体内,再将点胶的蓝光LED芯片进行点胶烘烤,完成LED封装。
其中,所述红绿荧光粉与所述LED封装胶的重量比为1:1~2,制得红绿荧光封装胶。
其中,所述第二步中,所述烘烤固晶胶的温度为100~200℃。
其中,所述第二步中,所述点胶烘烤的温度为100~200℃。
为实现上述目的之三,本发明提供以下技术方案:
提供一种蓝光LED灯的应用,采用上述防蓝光LED灯在电视机背光源灯条中的应用。
本发明的有益效果:
(1)本发明的一种蓝光LED灯,本发明的一种蓝光LED灯,由于蓝光LED芯片发出的蓝光波长为主要波长且存在于光源中,在蓝光LED芯片上封装了红绿荧光封装胶后,红绿荧光对蓝光波长有效干涉,降低蓝光出光比例,尤其是红绿荧光封装胶由红绿荧光粉和环氧树脂混合而成,红绿荧光封装胶均匀沉淀在蓝光LED芯片外表面上,所形成的荧光层能有效降低蓝光溢出,从而减少了蓝光,进而减少对视网膜有害的短波长蓝光;另外,本发明的蓝光LED芯片的结构层中减去P-AlGaN层,从而减少了Al组分,可避免发光效率过高而造成有害光伤害视网膜;此外,蓝光LED芯片还增加了ITO层即铟锡氧化物半导体透明导电膜,该ITO层具有较好的导电性和透明性且可切断有害的电子辐射、减少有害短波长的蓝光;而且,蓝光LED芯片中还增加了金属反射层,金属反射层把晶片射出的光线较好地反射出来,即,提高对视网膜伤害较少的光线强度;结合上述结构,本发明的蓝光LED灯将波长432nm以下藍光減少80%,将波长446nm以下蓝光減少 60%,能有效减少有害蓝光对人眼細胞生存力下降、細胞壞死、細胞凋亡的影响。
(2)本发明的一种蓝光LED灯的制造工艺,能制出具有上述优点的蓝光LED灯,且具有生产工艺简单、易于操作的优点。
(3)本发明的一种蓝光LED灯的应用,将其应用于电视机背光源灯条,从而减少了电视机显示屏对人眼的伤害。
附图说明
图1为本发明一种蓝光LED灯的结构示意图;
图2为蓝光LED芯片的结构示意图。
附图标记:
支架——1;蓝光LED芯片——2、金属反射层——21、蓝宝石衬底——22、n-GaN层——23、MOW层——24、P-GaN层——25、ITO层——26、P电极——27、N电极——28;金属导电体——3;金线——4;红绿荧光封装胶——5;固晶胶——6。
具体实施方式
以下结合具体实施例及附图对本发明进行详细说明。
实施例1。
本实施例的蓝光LED灯如图1和图2所示,设有支架1,支架1设有腔体,腔体的内底部固定有金属导电体3,该金属导电体3伸出支架1外部从而与外电路电连接。支架1 的腔体内置了蓝光LED芯片2,蓝光LED芯片2用固晶胶6固定在腔体内,其通过金线4 与连接金属导电体3,当然,金属导电体还可另外的设置方式,只要能与外部电路电连接即可。蓝光LED芯片2的外表面封装了红绿荧光封装胶5,红绿荧光封装胶5由红绿荧光粉和环氧树脂组成,红绿荧光封装胶5还可以是其他结构的封装体,且,红绿荧光封装胶 5填满支架1的腔体,从而保证充足的红绿荧光量。另外,蓝光LED芯片2的具体结构包括:由下往上依次层叠的金属反射层21、蓝宝石衬底22、n-GaN层23、MOW层24、P-GaN 层25和ITO层26,ITO层26上设置P电极27,P-GaN层25上设置N电极28。另外,金属反射层的厚度为100~200nm、所述蓝宝石衬底的厚度为100~200μm、所述n-GaN层的厚度为1~5μm、所述MOW层的厚度为40~60nm、所述P-GaN层厚度为500~700nm和所述ITO层的厚度为150~300nm。优选地为,金属反射层21的厚度为150nm、蓝宝石衬底22的厚度为150μm、n-GaN层23的厚度为3μm、MOW层24的厚度为50nm、P-GaN 层25厚度为600nm和ITO层26的厚度为23,蓝光LED芯片各层的厚度精心设计,这样能有效地控制蓝光产生量。该防蓝光LED灯可在电视机背光源灯条中的应用。
实施例2。
一种蓝光LED灯的制造工艺,包括以下制备步骤:
第一步、蓝光LED芯片的制备
把蓝宝石衬底送入外延炉,在所述蓝宝石衬底上依次生产以下结构层:在900~1100℃生长n-GaN层、600~700℃生长MOV层、在600~700℃生长P-GaN层、在300~500℃生长 ITO层,冷却外延炉,然后在ITO层上固定p-pad层以及在P-GaN层上连接有n-pad层,再在蓝宝石衬底的底面粘贴金属反射层,制得蓝光LED芯片,精心研究得出了较好生长 LED芯片的温度,以制备出符合要求的蓝光LED芯片;
第二步、LED封装
步骤一、固晶:使用固晶胶把所制得的蓝光LED芯片固定于支架内,然后烘烤固晶胶,完成固晶;
步骤二、焊线:使用金属线把蓝光LED芯片的P电极和N电极分别与所述金属导电体连接;
步骤三、封胶
1、配胶:把红绿荧光粉与LED封装胶混合搅拌,其中,所述红绿荧光粉与所述LED封装胶的重量比为1:1~2,使得红绿荧光封装胶有充足的红绿荧光色,且不影响封装胶的胶粘性,从而制得红绿荧光封装胶;
2、点胶:将所制得的红绿荧光封装胶点胶在所述蓝光LED芯片上,使得LED蓝光芯片的外表面封装红绿荧光封装胶且所述红绿荧光封装胶填充于所述支架的腔体内,再将点胶的蓝光LED芯片进行点胶烘烤,完成LED封装。
其中,所述烘烤固晶胶的温度为100~200℃,从而能使固晶固化,同时不影响支架的硬度。
其中,所述第二步中,所述点胶烘烤的温度为100~200℃,从而能使固晶固化,同时不影响支架的硬度。
最后应当说明的是,以上实施例仅用以说明本发明的技术方案,而非对本发明保护范围的限制,尽管参照较佳实施例对本发明作了详细地说明,本领域的普通技术人员应当理解,可以对本发明的技术方案进行修改或者等同替换,而不脱离本发明技术方案的实质和范围。
Claims (10)
1.一种蓝光LED灯,其特征是:包括支架、设于所述支架内的蓝光LED芯片,所述支架上设有与外电路电连接的金属导电体,所述蓝光LED芯片通过金线与所述金属导电体连接,所述蓝光LED芯片的外表面封装有红绿荧光封装胶;所述蓝光LED芯片包括由下往上依次层叠的金属反射层、蓝宝石衬底、n-GaN层、MOW层、P-GaN层和ITO层,所述ITO层上设置P电极,所述P-GaN层上设置N电极;其中,所述红绿荧光封装胶由红绿荧光粉与环氧树脂混合而成。
2.根据权利要求1所述的一种蓝光LED灯,其特征是:所述金属反射层的厚度为100~200nm、所述蓝宝石衬底的厚度为100~200μm、所述n-GaN层的厚度为1~5μm、所述MOW层的厚度为40~60nm、所述P-GaN层厚度为500~700nm和所述ITO层的厚度为150~300nm。
3.根据权利要求1所述的一种蓝光LED灯,其特征是:所述金属反射层的厚度为150nm、所述蓝宝石衬底的厚度为150μm、所述n-GaN层的厚度为3μm、所述MOW层的厚度为50nm、所述P-GaN层厚度为600nm和所述ITO层的厚度为230nm。
4.根据权利要求1所述的一种蓝光LED灯,其特征是:所述支架设有腔体,所述金属导电体固定于所述腔体的内底部并伸出所述支架外部,所述蓝光LED芯片固定在所述腔体底部且通过金线与位于腔体内的金属导电体连接。
5.根据权利要求4所述的一种蓝光LED灯,其特征是:所述红绿荧光封装胶填满所述支架的腔体。
6.权利要求1至5任一项所述的一种蓝光LED灯的制造工艺,其特征是:包括以下制备步骤:
第一步、蓝光LED芯片的制备
把蓝宝石衬底送入外延炉,在所述蓝宝石衬底上依次生长n-GaN层、MOV层、P-GaN层、ITO层,冷却外延炉,然后在ITO层上固定P电极以及在P-GaN层上连接有N电极,再在蓝宝石衬底的底面粘贴金属反射层,制得蓝光LED芯片;
第二步、LED封装
步骤一、固晶:使用固晶胶把所制得的蓝光LED芯片固定于支架内,然后烘烤固晶胶,完成固晶;
步骤二、焊线:使用金线把蓝光LED芯片的P电极和N电极分别与所述金属导电体连接;
步骤三、封胶
1、配胶:把红绿荧光粉与LED封装胶混合搅拌;
2、点胶:将所制得的红绿荧光封装胶点胶在所述蓝光LED芯片上,使得LED蓝光芯片的外表面封装红绿荧光封装胶且所述红绿荧光封装胶填充于所述支架的腔体内,再将点胶的蓝光LED芯片进行点胶烘烤,完成LED封装。
7.据权利要求6所述的一种蓝光LED灯的制造工艺,其特征是:所述红绿荧光粉与所述LED封装胶的重量比为1:1~2,制得红绿荧光封装胶。
8.据权利要求6所述的一种蓝光LED灯的制造工艺,其特征是:所述第二步中,所述烘烤固晶胶的100~200℃。
9.据权利要求6所述的一种蓝光LED灯的制造工艺,其特征是:所述第二步中,所述点胶烘烤的100~200℃。
10.一种蓝光LED灯的应用,其特征是:采用权利要求1~4任一项所述的防蓝光LED灯在电视机背光源灯条中的应用。
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