JP4583348B2 - 発光装置 - Google Patents
発光装置 Download PDFInfo
- Publication number
- JP4583348B2 JP4583348B2 JP2006222051A JP2006222051A JP4583348B2 JP 4583348 B2 JP4583348 B2 JP 4583348B2 JP 2006222051 A JP2006222051 A JP 2006222051A JP 2006222051 A JP2006222051 A JP 2006222051A JP 4583348 B2 JP4583348 B2 JP 4583348B2
- Authority
- JP
- Japan
- Prior art keywords
- light
- phosphor
- emitting device
- led element
- light emitting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 112
- 238000007789 sealing Methods 0.000 claims description 23
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- 150000001875 compounds Chemical class 0.000 claims description 20
- 229910052915 alkaline earth metal silicate Inorganic materials 0.000 claims description 14
- 239000003822 epoxy resin Substances 0.000 claims description 12
- 229920000647 polyepoxide Polymers 0.000 claims description 12
- 229910052693 Europium Inorganic materials 0.000 claims description 11
- OGPBJKLSAFTDLK-UHFFFAOYSA-N europium atom Chemical compound [Eu] OGPBJKLSAFTDLK-UHFFFAOYSA-N 0.000 claims description 11
- 239000003795 chemical substances by application Substances 0.000 claims description 8
- 229920002050 silicone resin Polymers 0.000 claims description 8
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- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims 1
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- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
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- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonia chloride Chemical compound [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 description 2
- 229910052582 BN Inorganic materials 0.000 description 2
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 description 2
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 2
- 239000004677 Nylon Substances 0.000 description 2
- 229910019142 PO4 Inorganic materials 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
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- HMOQPOVBDRFNIU-UHFFFAOYSA-N barium(2+);dioxido(oxo)silane Chemical compound [Ba+2].[O-][Si]([O-])=O HMOQPOVBDRFNIU-UHFFFAOYSA-N 0.000 description 2
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- QSQXISIULMTHLV-UHFFFAOYSA-N strontium;dioxido(oxo)silane Chemical compound [Sr+2].[O-][Si]([O-])=O QSQXISIULMTHLV-UHFFFAOYSA-N 0.000 description 2
- 230000002194 synthesizing effect Effects 0.000 description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 2
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- 229920001342 Bakelite® Polymers 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical group [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229920002574 CR-39 Polymers 0.000 description 1
- KMTRUDSVKNLOMY-UHFFFAOYSA-N Ethylene carbonate Chemical compound O=C1OCCO1 KMTRUDSVKNLOMY-UHFFFAOYSA-N 0.000 description 1
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- BZHJMEDXRYGGRV-UHFFFAOYSA-N Vinyl chloride Chemical compound ClC=C BZHJMEDXRYGGRV-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 150000001342 alkaline earth metals Chemical class 0.000 description 1
- 235000019270 ammonium chloride Nutrition 0.000 description 1
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- DXNVUKXMTZHOTP-UHFFFAOYSA-N dialuminum;dimagnesium;barium(2+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[O-2].[O-2].[Mg+2].[Mg+2].[Al+3].[Al+3].[Ba+2].[Ba+2] DXNVUKXMTZHOTP-UHFFFAOYSA-N 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 229910001940 europium oxide Inorganic materials 0.000 description 1
- AEBZCFFCDTZXHP-UHFFFAOYSA-N europium(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Eu+3].[Eu+3] AEBZCFFCDTZXHP-UHFFFAOYSA-N 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
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- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical group [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
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- 238000004544 sputter deposition Methods 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Images
Classifications
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
- C09K11/7783—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing two or more rare earth metals one of which being europium
- C09K11/7795—Phosphates
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
- C09K11/7728—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing europium
- C09K11/7734—Aluminates
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
- C09K11/7728—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing europium
- C09K11/77344—Aluminosilicates
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
- C09K11/7728—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing europium
- C09K11/774—Borates
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/0001—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems
- G02B6/0011—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems the light guides being planar or of plate-like form
- G02B6/0033—Means for improving the coupling-out of light from the light guide
- G02B6/0035—Means for improving the coupling-out of light from the light guide provided on the surface of the light guide or in the bulk of it
- G02B6/0036—2-D arrangement of prisms, protrusions, indentations or roughened surfaces
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/0001—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems
- G02B6/0011—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems the light guides being planar or of plate-like form
- G02B6/0066—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems the light guides being planar or of plate-like form characterised by the light source being coupled to the light guide
- G02B6/0073—Light emitting diode [LED]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
- F21Y2105/00—Planar light sources
- F21Y2105/10—Planar light sources comprising a two-dimensional array of point-like light-generating elements
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
- F21Y2115/00—Light-generating elements of semiconductor light sources
- F21Y2115/10—Light-emitting diodes [LED]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16135—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/16145—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/32257—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic the layer connector connecting to a bonding area disposed in a recess of the surface of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
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Description
窒化物半導体からなり、ピーク発光波長が450nmから490nmの範囲にあるLED素子と、
前記LED素子が発光した光の一部を吸収し、その吸収した光の波長と異なる波長を有する光を発光する蛍光体とを備えた発光装置において、
前記蛍光体は、
式:(2−x−y)BaO・x(Sr,Ca)O・(1−a−b−c−d)SiO2・aP2O5 bAl2O3 cB2O3 dGeO2:y Eu2+
(式中、0.01<x<1.6、0.005<y<0.5、0≦a、b、c、d<0.5である)
で示される2価のユウロピウムで活性化されたアルカリ土類金属珪酸塩からなり、黄色光を発することを特徴とする発光装置が提供される。
マウントリードのカップ内に配置させたGaN系半導体からなりピーク発光波長が450nmから490nmの範囲にあるLED素子と、
前記LED素子が発光した光の一部を吸収し、その吸収した光の波長と異なる波長を有する光を発光する蛍光体と、
前記蛍光体を含有する封止剤を前記カップ内に充填させたコーティング部材と、
前記コーティング部材、前記LED素子及び前記マウントリードの先端を被覆するモールド部材とを備えた発光装置において、
前記蛍光体は、
式:(2−x−y)BaO・x(Sr,Ca)O・(1−a−b−c−d)SiO2・aP2O5 bAl2O3 cB2O3 dGeO2:y Eu2+
(式中、0.01<x<1.6、0.005<y<0.5、0≦a、b、c、d<0.5である)
で示される2価のユウロピウムで活性化されたアルカリ土類金属珪酸塩からなり、黄色光を発することを特徴とする発光装置が提供される。
筐体内にフリップチップ実装されたGaN系化合物半導体からなりピーク発光波長が450nmから490nmの範囲にあるLED素子と、
該LED素子が発光した光の一部を吸収し、その吸収した光の波長と異なる波長を有する光を発光する蛍光体と、
前記蛍光体を含有する透明封止剤により前記LED素子が配設された筐体内を充填するモールド部材とを有する発光装置において、
前記蛍光体は、
式:(2−x−y)BaO・x(Sr,Ca)O・(1−a−b−c−d)SiO2・aP2O5 bAl2O3 cB2O3 dGeO2:y Eu2+
(式中、0.01<x<1.6、0.005<y<0.5、0≦a、b、c、d<0.5である)
で示される2価のユウロピウムで活性化されたアルカリ土類金属珪酸塩からなり、黄色光を発することを特徴とする発光装置が提供される。
Me(3−x−y)MgSi2O3:xEu,yMn
(式中、
0.005<x<0.5、
0.005<y<0.5、
MeはBaおよび/またはSrおよび/またはCaを表す)
で示されるアルカリ土類金属−マグネシウム−二珪酸塩:Eu2+,Mn2+の群からのさらに別の赤く発光する蛍光体を有している。
T=2950K(464nm+Sr1.4Ba0.6SiO4:Eu2+);x=0.4380、y=0.4004、Ra=73、
T=3497K(464nm+Sr1.6Ba0.4SiO4:Eu2+);x=0.4086、y=0.3996、Ra=74、
T=4183K(464nm+Sr1.9Ba0.08Ca0.02SiO4:Eu2+);x=0.3762、y=0.3873、Ra=75、
T=6624K(464nm+Sr1.9Ba0.02Ca0.08SiO4:Eu2+);x=0.3101、y=0.3306、Ra=76、
T=6385K(464nm+Sr1.6Ba0.4SiO4:Eu2++Sr0.4Ba1.6SiO4:Eu2+);x=0.3135、y=0.3397、Ra=82、
T=4216K(464nm+Sr1.9Ba0.08Ca0.02SiO4:Eu2+);x=0.3710、y=0.3696、Ra=82、
T=3954K(464nm+Sr1.6Ba0.4SiO4:Eu2++Sr0.4Ba1.6SiO4:Eu2++YVO4:Eu3+);x=0.3756、y=0.3816、Ra=84、
T=6489K(464nm+Sr1.6Ba0.4SiO4+Sr0.4Ba1.6SiO4:Eu2++アルミン酸バリウムマグネシウム:Eu2+);x=0.3115、y=0.3390、Ra=66、
T=5097K(464nm+Sr1.6Ba0.4(Si0.08B0.02)O4:Eu2++Sr0.6Ba1.4SiO4:Eu2+);x=0.3423、y=0.3485、Ra=82、
T=5084K(464nm+Sr1.6Ba0.4(Si0.08B0.02)O4:Eu2++Sr0.6Ba1.4SiO4:Eu2++アルミン酸ストロンチウムマグネシウム:Eu2+);x=0.3430、y=0.3531、Ra=83、
T=3369K(464nm+Sr1.4Ba0.6Si0.95Ge0.05O4:Eu2+);x=0.4134、y=0.3959、Ra=74、
T=2787K(466nm+Sr1.4Ba0.6Si0.98P0.02O4.01:Eu2+);x=0.4630、y=0.4280、Ra=72、
T=2913K(464nm+Sr1.4Ba0.6Si0.98Al0.02O4:Eu2+);x=0.4425、y=0.4050、Ra=73。
2 リードフレーム
3 メタルステム
4 青色LED
5 マウント
6 ボンディングワイヤ
7 ボンディングワイヤ
8 内部樹脂
9 外部樹脂
10 カップ
11 蛍光体
41 サファイア基板
42 バッファ層
43 n型コンタクト層
44 n型クラッド層
45 MQW活性層
46 p型クラッド層
47 p型コンタクト層
48 p電極
49 n電極
50 透光性電極
70 導光板
70a 出射面
71 光反射ケース
72 反射面
73 光拡散模様
74 フィルム
81 パターン配線
82 パターン配線
83 枠体
83a カップ
88 封止剤
91 過電圧保護素子
92 電極
93 電極
94a Auバンプ
94b Auバンプ
95 ツェナーダイオード
96 コンデンサ
100 蛍光カバー
Claims (14)
- 窒化物半導体からなり、ピーク発光波長が450nmから490nmの範囲にあるLED素子と、
前記LED素子が発光した光の一部を吸収し、その吸収した光の波長と異なる波長を有する光を発光する蛍光体とを備えた発光装置において、
前記蛍光体は、
式:(2−x−y)BaO・x(Sr,Ca)O・(1−a−b−c−d)SiO2・aP2O5 bAl2O3 cB2O3 dGeO2:y Eu2+
(式中、0.01<x<1.6、0.005<y<0.5、0≦a、b、c、d<0.5である)
で示される2価のユウロピウムで活性化されたアルカリ土類金属珪酸塩からなり、黄色光を発することを特徴とする発光装置。 - 前記アルカリ土類金属珪酸塩からなり黄色光を発する第1蛍光体の他に、前記第1蛍光体と異なり赤色光を発する第2蛍光体を備え、白の色調が調整されたことを特徴とする請求項1に記載の発光装置。
- 前記アルカリ土類金属珪酸塩からなる蛍光体は、560〜570nmの黄色光を発することを特徴とする請求項1または2に記載の発光装置。
- 前記アルカリ土類金属珪酸塩からなる蛍光体は、前記LED素子を被覆しシリコーン樹脂、エポキシ樹脂又は低融点ガラスからなる被覆部材に混入されていることを特徴とする請求項1から3のいずれか1項に記載の発光装置。
- 前記被覆部材は、拡散剤が混入されていることを特徴とする請求項4に記載の発光装置。
- 前記被覆部材は、さらに、透明な第2の被覆部材により覆われたことを特徴とする請求項4または5に記載の発光装置。
- 前記LED素子は、絶縁性を有し透明な接着剤によりフレームに固定され、
前記アルカリ土類金属珪酸塩からなる蛍光体は、前記接着材に含有されることを特徴とする請求項1から6のいずれか1項に記載の発光装置。 - 前記LED素子から発光された光を導入して光出力面から出力する略矩形の導光板を備え、
前記アルカリ土類金属珪酸塩からなる蛍光体は、前記導光板の前記光出力面上に面状に設けられたことを特徴とする請求項1から7のいずれか1項に記載の発光装置。 - 前記LED素子は、発光層がインジウムを含み量子井戸構造からなることを特徴とする請求項1から8のいずれか1項に記載の発光装置。
- 前記アルカリ土類金属珪酸塩からなる蛍光体は、ハロゲン化物を添加されていることを特徴とする請求項1から9のいずれか1項に記載の発光装置。
- マウントリードのカップ内に配置させたGaN系半導体からなりピーク発光波長が450nmから490nmの範囲にあるLED素子と、
前記LED素子が発光した光の一部を吸収し、その吸収した光の波長と異なる波長を有する光を発光する蛍光体と、
前記蛍光体を含有する封止剤を前記カップ内に充填させたコーティング部材と、
前記コーティング部材、前記LED素子及び前記マウントリードの先端を被覆するモールド部材とを備えた発光装置において、
前記蛍光体は、
式:(2−x−y)BaO・x(Sr,Ca)O・(1−a−b−c−d)SiO2・aP2O5 bAl2O3 cB2O3 dGeO2:y Eu2+
(式中、0.01<x<1.6、0.005<y<0.5、0≦a、b、c、d<0.5である)
で示される2価のユウロピウムで活性化されたアルカリ土類金属珪酸塩からなり、黄色光を発することを特徴とする発光装置。 - 前記LED素子は、前記カップ内に配置され、前記LED素子を覆うように且つ前記カップ上面縁部より低く前記アルカリ土類金属珪酸塩からなる蛍光体を配置したことを特徴とする請求項11に記載の発光装置。
- 筐体内にフリップチップ実装されたGaN系化合物半導体からなりピーク発光波長が450nmから490nmの範囲にあるLED素子と、
該LED素子が発光した光の一部を吸収し、その吸収した光の波長と異なる波長を有する光を発光する蛍光体と、
前記蛍光体を含有する透明封止剤により前記LED素子が配設された筐体内を充填するモールド部材とを有する発光装置において、
前記蛍光体は、
式:(2−x−y)BaO・x(Sr,Ca)O・(1−a−b−c−d)SiO2・aP2O5 bAl2O3 cB2O3 dGeO2:y Eu2+
(式中、0.01<x<1.6、0.005<y<0.5、0≦a、b、c、d<0.5である)
で示される2価のユウロピウムで活性化されたアルカリ土類金属珪酸塩からなり、黄色光を発することを特徴とする発光装置。 - 前記LED素子は、ツェナーダイオードからなるサブマウント上に配置され、かつ、周囲が前記アルカリ土類金属珪酸塩からなる蛍光体で覆われたことを特徴とする請求項13に記載の発光装置。
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