JP2018516998A - オプトエレクトロニクス用途のためのポリシロキサン製剤及びコーティング - Google Patents
オプトエレクトロニクス用途のためのポリシロキサン製剤及びコーティング Download PDFInfo
- Publication number
- JP2018516998A JP2018516998A JP2017536545A JP2017536545A JP2018516998A JP 2018516998 A JP2018516998 A JP 2018516998A JP 2017536545 A JP2017536545 A JP 2017536545A JP 2017536545 A JP2017536545 A JP 2017536545A JP 2018516998 A JP2018516998 A JP 2018516998A
- Authority
- JP
- Japan
- Prior art keywords
- amu
- silicon
- formulation
- coating
- resin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000203 mixture Substances 0.000 title claims abstract description 302
- -1 Polysiloxane Polymers 0.000 title claims description 134
- 238000009472 formulation Methods 0.000 title description 201
- 238000000576 coating method Methods 0.000 title description 115
- 229920001296 polysiloxane Polymers 0.000 title description 73
- 230000005693 optoelectronics Effects 0.000 title description 8
- 229920005989 resin Polymers 0.000 claims abstract description 126
- 239000011347 resin Substances 0.000 claims abstract description 126
- 239000002904 solvent Substances 0.000 claims abstract description 68
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 62
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 62
- 239000010703 silicon Substances 0.000 claims abstract description 62
- 239000003054 catalyst Substances 0.000 claims abstract description 58
- 125000000217 alkyl group Chemical group 0.000 claims abstract description 34
- 239000010408 film Substances 0.000 claims description 52
- 239000000758 substrate Substances 0.000 claims description 41
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 claims description 35
- 125000003118 aryl group Chemical group 0.000 claims description 34
- 229920000642 polymer Polymers 0.000 claims description 28
- 239000004094 surface-active agent Substances 0.000 claims description 25
- 238000000034 method Methods 0.000 claims description 21
- NOKUWSXLHXMAOM-UHFFFAOYSA-N hydroxy(phenyl)silicon Chemical class O[Si]C1=CC=CC=C1 NOKUWSXLHXMAOM-UHFFFAOYSA-N 0.000 claims description 20
- 125000004432 carbon atom Chemical group C* 0.000 claims description 18
- 239000010410 layer Substances 0.000 claims description 18
- 239000012528 membrane Substances 0.000 claims description 15
- 239000011159 matrix material Substances 0.000 claims description 7
- 239000010409 thin film Substances 0.000 claims description 7
- 230000004888 barrier function Effects 0.000 claims description 5
- 238000000151 deposition Methods 0.000 claims description 4
- 238000002156 mixing Methods 0.000 claims description 4
- 239000004973 liquid crystal related substance Substances 0.000 claims description 3
- 238000002161 passivation Methods 0.000 claims description 3
- 238000007725 thermal activation Methods 0.000 claims 1
- 239000011248 coating agent Substances 0.000 description 97
- 230000000052 comparative effect Effects 0.000 description 40
- 239000002210 silicon-based material Substances 0.000 description 38
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 32
- VDZOOKBUILJEDG-UHFFFAOYSA-M tetrabutylammonium hydroxide Chemical compound [OH-].CCCC[N+](CCCC)(CCCC)CCCC VDZOOKBUILJEDG-UHFFFAOYSA-M 0.000 description 28
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 description 26
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 23
- KUCWUAFNGCMZDB-UHFFFAOYSA-N 2-amino-3-nitrophenol Chemical compound NC1=C(O)C=CC=C1[N+]([O-])=O KUCWUAFNGCMZDB-UHFFFAOYSA-N 0.000 description 20
- 239000000523 sample Substances 0.000 description 20
- 238000006116 polymerization reaction Methods 0.000 description 18
- 150000001875 compounds Chemical class 0.000 description 16
- 239000007787 solid Substances 0.000 description 16
- 239000000243 solution Substances 0.000 description 15
- CPUDPFPXCZDNGI-UHFFFAOYSA-N triethoxy(methyl)silane Chemical compound CCO[Si](C)(OCC)OCC CPUDPFPXCZDNGI-UHFFFAOYSA-N 0.000 description 15
- 239000002318 adhesion promoter Substances 0.000 description 13
- YYLGKUPAFFKGRQ-UHFFFAOYSA-N dimethyldiethoxysilane Chemical compound CCO[Si](C)(C)OCC YYLGKUPAFFKGRQ-UHFFFAOYSA-N 0.000 description 13
- JCVQKRGIASEUKR-UHFFFAOYSA-N triethoxy(phenyl)silane Chemical compound CCO[Si](OCC)(OCC)C1=CC=CC=C1 JCVQKRGIASEUKR-UHFFFAOYSA-N 0.000 description 13
- 150000007524 organic acids Chemical class 0.000 description 12
- 230000001588 bifunctional effect Effects 0.000 description 11
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 10
- 239000011521 glass Substances 0.000 description 10
- 239000000463 material Substances 0.000 description 10
- 230000003287 optical effect Effects 0.000 description 10
- 238000006243 chemical reaction Methods 0.000 description 9
- 235000005985 organic acids Nutrition 0.000 description 9
- MRYQZMHVZZSQRT-UHFFFAOYSA-M tetramethylazanium;acetate Chemical compound CC([O-])=O.C[N+](C)(C)C MRYQZMHVZZSQRT-UHFFFAOYSA-M 0.000 description 9
- FENFUOGYJVOCRY-UHFFFAOYSA-N 1-propoxypropan-2-ol Chemical compound CCCOCC(C)O FENFUOGYJVOCRY-UHFFFAOYSA-N 0.000 description 8
- BFXIKLCIZHOAAZ-UHFFFAOYSA-N methyltrimethoxysilane Chemical compound CO[Si](C)(OC)OC BFXIKLCIZHOAAZ-UHFFFAOYSA-N 0.000 description 8
- 230000004048 modification Effects 0.000 description 8
- 238000012986 modification Methods 0.000 description 8
- 239000000654 additive Substances 0.000 description 7
- 150000001412 amines Chemical class 0.000 description 7
- 239000008199 coating composition Substances 0.000 description 7
- 239000000126 substance Substances 0.000 description 7
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 6
- 239000007864 aqueous solution Substances 0.000 description 6
- 229910052799 carbon Inorganic materials 0.000 description 6
- 238000011068 loading method Methods 0.000 description 6
- 150000004756 silanes Chemical class 0.000 description 6
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 5
- 238000006482 condensation reaction Methods 0.000 description 5
- 238000001816 cooling Methods 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 229910052757 nitrogen Inorganic materials 0.000 description 5
- 238000010943 off-gassing Methods 0.000 description 5
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 5
- MCZDHTKJGDCTAE-UHFFFAOYSA-M tetrabutylazanium;acetate Chemical compound CC([O-])=O.CCCC[N+](CCCC)(CCCC)CCCC MCZDHTKJGDCTAE-UHFFFAOYSA-M 0.000 description 5
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 4
- 241000252506 Characiformes Species 0.000 description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 4
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 4
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 4
- 239000002253 acid Substances 0.000 description 4
- 150000001298 alcohols Chemical class 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 4
- RLGQACBPNDBWTB-UHFFFAOYSA-N cetyltrimethylammonium ion Chemical compound CCCCCCCCCCCCCCCC[N+](C)(C)C RLGQACBPNDBWTB-UHFFFAOYSA-N 0.000 description 4
- 239000003795 chemical substances by application Substances 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- JJQZDUKDJDQPMQ-UHFFFAOYSA-N dimethoxy(dimethyl)silane Chemical compound CO[Si](C)(C)OC JJQZDUKDJDQPMQ-UHFFFAOYSA-N 0.000 description 4
- LZCLXQDLBQLTDK-UHFFFAOYSA-N ethyl 2-hydroxypropanoate Chemical compound CCOC(=O)C(C)O LZCLXQDLBQLTDK-UHFFFAOYSA-N 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 238000007373 indentation Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 4
- 150000007522 mineralic acids Chemical class 0.000 description 4
- 229910017604 nitric acid Inorganic materials 0.000 description 4
- 239000004014 plasticizer Substances 0.000 description 4
- 238000002310 reflectometry Methods 0.000 description 4
- 229910000077 silane Inorganic materials 0.000 description 4
- 238000007764 slot die coating Methods 0.000 description 4
- 238000004528 spin coating Methods 0.000 description 4
- 150000003460 sulfonic acids Chemical class 0.000 description 4
- 238000002411 thermogravimetry Methods 0.000 description 4
- ZNOCGWVLWPVKAO-UHFFFAOYSA-N trimethoxy(phenyl)silane Chemical compound CO[Si](OC)(OC)C1=CC=CC=C1 ZNOCGWVLWPVKAO-UHFFFAOYSA-N 0.000 description 4
- YWWDBCBWQNCYNR-UHFFFAOYSA-N trimethylphosphine Chemical compound CP(C)C YWWDBCBWQNCYNR-UHFFFAOYSA-N 0.000 description 4
- RIOQSEWOXXDEQQ-UHFFFAOYSA-N triphenylphosphine Chemical compound C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 RIOQSEWOXXDEQQ-UHFFFAOYSA-N 0.000 description 4
- WYTZZXDRDKSJID-UHFFFAOYSA-N (3-aminopropyl)triethoxysilane Chemical compound CCO[Si](OCC)(OCC)CCCN WYTZZXDRDKSJID-UHFFFAOYSA-N 0.000 description 3
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- JKXYOQDLERSFPT-UHFFFAOYSA-N 2-[2-[2-[2-[2-[2-[2-[2-[2-[2-[2-[2-[2-[2-[2-[2-[2-[2-[2-(2-octadecoxyethoxy)ethoxy]ethoxy]ethoxy]ethoxy]ethoxy]ethoxy]ethoxy]ethoxy]ethoxy]ethoxy]ethoxy]ethoxy]ethoxy]ethoxy]ethoxy]ethoxy]ethoxy]ethoxy]ethanol Chemical compound CCCCCCCCCCCCCCCCCCOCCOCCOCCOCCOCCOCCOCCOCCOCCOCCOCCOCCOCCOCCOCCOCCOCCOCCOCCOCCO JKXYOQDLERSFPT-UHFFFAOYSA-N 0.000 description 3
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 3
- 230000002378 acidificating effect Effects 0.000 description 3
- 150000003868 ammonium compounds Chemical class 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 3
- 238000009833 condensation Methods 0.000 description 3
- 230000005494 condensation Effects 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 238000005336 cracking Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- FWDBOZPQNFPOLF-UHFFFAOYSA-N ethenyl(triethoxy)silane Chemical compound CCO[Si](OCC)(OCC)C=C FWDBOZPQNFPOLF-UHFFFAOYSA-N 0.000 description 3
- 150000002170 ethers Chemical class 0.000 description 3
- 238000010304 firing Methods 0.000 description 3
- 125000000524 functional group Chemical group 0.000 description 3
- 230000007062 hydrolysis Effects 0.000 description 3
- 238000006460 hydrolysis reaction Methods 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 238000001000 micrograph Methods 0.000 description 3
- 239000000178 monomer Substances 0.000 description 3
- 239000012299 nitrogen atmosphere Substances 0.000 description 3
- 229920003217 poly(methylsilsesquioxane) Polymers 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 150000003242 quaternary ammonium salts Chemical class 0.000 description 3
- 238000005507 spraying Methods 0.000 description 3
- PLFJWWUZKJKIPZ-UHFFFAOYSA-N 2-[2-[2-(2,6,8-trimethylnonan-4-yloxy)ethoxy]ethoxy]ethanol Chemical compound CC(C)CC(C)CC(CC(C)C)OCCOCCOCCO PLFJWWUZKJKIPZ-UHFFFAOYSA-N 0.000 description 2
- URDOJQUSEUXVRP-UHFFFAOYSA-N 3-triethoxysilylpropyl 2-methylprop-2-enoate Chemical compound CCO[Si](OCC)(OCC)CCCOC(=O)C(C)=C URDOJQUSEUXVRP-UHFFFAOYSA-N 0.000 description 2
- PXMCZQWIXOCJRB-UHFFFAOYSA-N C(CCC)[NH3+].C(C)(=O)[O-].C(C)(=O)[O-].C(C)(=O)[O-].C(C)(=O)[O-].C(CCC)[NH3+].C(CCC)[NH3+].C(CCC)[NH3+] Chemical compound C(CCC)[NH3+].C(C)(=O)[O-].C(C)(=O)[O-].C(C)(=O)[O-].C(C)(=O)[O-].C(CCC)[NH3+].C(CCC)[NH3+].C(CCC)[NH3+] PXMCZQWIXOCJRB-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Natural products P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 2
- 229910018540 Si C Inorganic materials 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 description 2
- DTQVDTLACAAQTR-UHFFFAOYSA-N Trifluoroacetic acid Chemical compound OC(=O)C(F)(F)F DTQVDTLACAAQTR-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 239000003377 acid catalyst Substances 0.000 description 2
- 150000007513 acids Chemical class 0.000 description 2
- 238000007792 addition Methods 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000003945 anionic surfactant Substances 0.000 description 2
- 150000001735 carboxylic acids Chemical class 0.000 description 2
- 238000004132 cross linking Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 235000013870 dimethyl polysiloxane Nutrition 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- YRIUSKIDOIARQF-UHFFFAOYSA-N dodecyl benzenesulfonate Chemical compound CCCCCCCCCCCCOS(=O)(=O)C1=CC=CC=C1 YRIUSKIDOIARQF-UHFFFAOYSA-N 0.000 description 2
- 229940071161 dodecylbenzenesulfonate Drugs 0.000 description 2
- 229940116333 ethyl lactate Drugs 0.000 description 2
- 230000003301 hydrolyzing effect Effects 0.000 description 2
- 230000003993 interaction Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- XTAZYLNFDRKIHJ-UHFFFAOYSA-N n,n-dioctyloctan-1-amine Chemical compound CCCCCCCCN(CCCCCCCC)CCCCCCCC XTAZYLNFDRKIHJ-UHFFFAOYSA-N 0.000 description 2
- KBXJHRABGYYAFC-UHFFFAOYSA-N octaphenylsilsesquioxane Chemical compound O1[Si](O2)(C=3C=CC=CC=3)O[Si](O3)(C=4C=CC=CC=4)O[Si](O4)(C=5C=CC=CC=5)O[Si]1(C=1C=CC=CC=1)O[Si](O1)(C=5C=CC=CC=5)O[Si]2(C=2C=CC=CC=2)O[Si]3(C=2C=CC=CC=2)O[Si]41C1=CC=CC=C1 KBXJHRABGYYAFC-UHFFFAOYSA-N 0.000 description 2
- FDPIMTJIUBPUKL-UHFFFAOYSA-N pentan-3-one Chemical compound CCC(=O)CC FDPIMTJIUBPUKL-UHFFFAOYSA-N 0.000 description 2
- 230000035699 permeability Effects 0.000 description 2
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 description 2
- 229920001921 poly-methyl-phenyl-siloxane Polymers 0.000 description 2
- 239000002952 polymeric resin Substances 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 230000002269 spontaneous effect Effects 0.000 description 2
- 230000008961 swelling Effects 0.000 description 2
- 229920003002 synthetic resin Polymers 0.000 description 2
- HYVDRSVZYMKTKG-UHFFFAOYSA-M tetramethylphosphanium;acetate Chemical compound CC([O-])=O.C[P+](C)(C)C HYVDRSVZYMKTKG-UHFFFAOYSA-M 0.000 description 2
- CRUVUWATNULHFA-UHFFFAOYSA-M tetramethylphosphanium;hydroxide Chemical compound [OH-].C[P+](C)(C)C CRUVUWATNULHFA-UHFFFAOYSA-M 0.000 description 2
- 238000005382 thermal cycling Methods 0.000 description 2
- JOXIMZWYDAKGHI-UHFFFAOYSA-N toluene-4-sulfonic acid Chemical compound CC1=CC=C(S(O)(=O)=O)C=C1 JOXIMZWYDAKGHI-UHFFFAOYSA-N 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- SWZDQOUHBYYPJD-UHFFFAOYSA-N tridodecylamine Chemical compound CCCCCCCCCCCCN(CCCCCCCCCCCC)CCCCCCCCCCCC SWZDQOUHBYYPJD-UHFFFAOYSA-N 0.000 description 2
- BPSIOYPQMFLKFR-UHFFFAOYSA-N trimethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CO[Si](OC)(OC)CCCOCC1CO1 BPSIOYPQMFLKFR-UHFFFAOYSA-N 0.000 description 2
- RMZAYIKUYWXQPB-UHFFFAOYSA-N trioctylphosphane Chemical compound CCCCCCCCP(CCCCCCCC)CCCCCCCC RMZAYIKUYWXQPB-UHFFFAOYSA-N 0.000 description 2
- ODHXBMXNKOYIBV-UHFFFAOYSA-N triphenylamine Chemical compound C1=CC=CC=C1N(C=1C=CC=CC=1)C1=CC=CC=C1 ODHXBMXNKOYIBV-UHFFFAOYSA-N 0.000 description 2
- XINQFOMFQFGGCQ-UHFFFAOYSA-L (2-dodecoxy-2-oxoethyl)-[6-[(2-dodecoxy-2-oxoethyl)-dimethylazaniumyl]hexyl]-dimethylazanium;dichloride Chemical compound [Cl-].[Cl-].CCCCCCCCCCCCOC(=O)C[N+](C)(C)CCCCCC[N+](C)(C)CC(=O)OCCCCCCCCCCCC XINQFOMFQFGGCQ-UHFFFAOYSA-L 0.000 description 1
- IIZPXYDJLKNOIY-JXPKJXOSSA-N 1-palmitoyl-2-arachidonoyl-sn-glycero-3-phosphocholine Chemical compound CCCCCCCCCCCCCCCC(=O)OC[C@H](COP([O-])(=O)OCC[N+](C)(C)C)OC(=O)CCC\C=C/C\C=C/C\C=C/C\C=C/CCCCC IIZPXYDJLKNOIY-JXPKJXOSSA-N 0.000 description 1
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 description 1
- HNUQMTZUNUBOLQ-UHFFFAOYSA-N 2-[2-[2-[2-[2-[2-[2-[2-[2-(2-octadecoxyethoxy)ethoxy]ethoxy]ethoxy]ethoxy]ethoxy]ethoxy]ethoxy]ethoxy]ethanol Chemical compound CCCCCCCCCCCCCCCCCCOCCOCCOCCOCCOCCOCCOCCOCCOCCOCCO HNUQMTZUNUBOLQ-UHFFFAOYSA-N 0.000 description 1
- NLMKTBGFQGKQEV-UHFFFAOYSA-N 2-[2-[2-[2-[2-[2-[2-[2-[2-[2-[2-[2-[2-[2-[2-[2-[2-[2-[2-(2-hexadecoxyethoxy)ethoxy]ethoxy]ethoxy]ethoxy]ethoxy]ethoxy]ethoxy]ethoxy]ethoxy]ethoxy]ethoxy]ethoxy]ethoxy]ethoxy]ethoxy]ethoxy]ethoxy]ethoxy]ethanol Chemical compound CCCCCCCCCCCCCCCCOCCOCCOCCOCCOCCOCCOCCOCCOCCOCCOCCOCCOCCOCCOCCOCCOCCOCCOCCOCCO NLMKTBGFQGKQEV-UHFFFAOYSA-N 0.000 description 1
- IEQAICDLOKRSRL-UHFFFAOYSA-N 2-[2-[2-[2-[2-[2-[2-[2-[2-[2-[2-[2-[2-[2-[2-[2-[2-[2-[2-[2-[2-[2-(2-dodecoxyethoxy)ethoxy]ethoxy]ethoxy]ethoxy]ethoxy]ethoxy]ethoxy]ethoxy]ethoxy]ethoxy]ethoxy]ethoxy]ethoxy]ethoxy]ethoxy]ethoxy]ethoxy]ethoxy]ethoxy]ethoxy]ethoxy]ethanol Chemical compound CCCCCCCCCCCCOCCOCCOCCOCCOCCOCCOCCOCCOCCOCCOCCOCCOCCOCCOCCOCCOCCOCCOCCOCCOCCOCCOCCO IEQAICDLOKRSRL-UHFFFAOYSA-N 0.000 description 1
- QLKGUVGAXDXFFW-UHFFFAOYSA-M 2-hydroxyethyl(trimethyl)azanium;acetate Chemical compound CC([O-])=O.C[N+](C)(C)CCO QLKGUVGAXDXFFW-UHFFFAOYSA-M 0.000 description 1
- KQKBQJPEUWKVTG-UHFFFAOYSA-M 2-hydroxyethyl(trimethyl)azanium;benzoate Chemical compound C[N+](C)(C)CCO.[O-]C(=O)C1=CC=CC=C1 KQKBQJPEUWKVTG-UHFFFAOYSA-M 0.000 description 1
- RANBUTDEKVWLAB-UHFFFAOYSA-M 2-hydroxyethyl(trimethyl)azanium;formate Chemical compound [O-]C=O.C[N+](C)(C)CCO RANBUTDEKVWLAB-UHFFFAOYSA-M 0.000 description 1
- KIZQNNOULOCVDM-UHFFFAOYSA-M 2-hydroxyethyl(trimethyl)azanium;hydroxide Chemical compound [OH-].C[N+](C)(C)CCO KIZQNNOULOCVDM-UHFFFAOYSA-M 0.000 description 1
- LDWOOZOWGNCQRI-UHFFFAOYSA-N 2-hydroxyethyl(trimethyl)azanium;nitrate Chemical compound [O-][N+]([O-])=O.C[N+](C)(C)CCO LDWOOZOWGNCQRI-UHFFFAOYSA-N 0.000 description 1
- GXDMUOPCQNLBCZ-UHFFFAOYSA-N 3-(3-triethoxysilylpropyl)oxolane-2,5-dione Chemical compound CCO[Si](OCC)(OCC)CCCC1CC(=O)OC1=O GXDMUOPCQNLBCZ-UHFFFAOYSA-N 0.000 description 1
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 1
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- LZZYPRNAOMGNLH-UHFFFAOYSA-M Cetrimonium bromide Chemical compound [Br-].CCCCCCCCCCCCCCCC[N+](C)(C)C LZZYPRNAOMGNLH-UHFFFAOYSA-M 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- 229920003171 Poly (ethylene oxide) Polymers 0.000 description 1
- 229910008051 Si-OH Inorganic materials 0.000 description 1
- 229910006358 Si—OH Inorganic materials 0.000 description 1
- WPMWEFXCIYCJSA-UHFFFAOYSA-N Tetraethylene glycol monododecyl ether Chemical compound CCCCCCCCCCCCOCCOCCOCCOCCO WPMWEFXCIYCJSA-UHFFFAOYSA-N 0.000 description 1
- MJOQJPYNENPSSS-XQHKEYJVSA-N [(3r,4s,5r,6s)-4,5,6-triacetyloxyoxan-3-yl] acetate Chemical compound CC(=O)O[C@@H]1CO[C@@H](OC(C)=O)[C@H](OC(C)=O)[C@H]1OC(C)=O MJOQJPYNENPSSS-XQHKEYJVSA-N 0.000 description 1
- DWDIARWKMZUTTP-UHFFFAOYSA-N acetic acid;2-(trimethylazaniumyl)acetate Chemical compound CC(O)=O.C[N+](C)(C)CC([O-])=O DWDIARWKMZUTTP-UHFFFAOYSA-N 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 125000002252 acyl group Chemical group 0.000 description 1
- 125000003342 alkenyl group Chemical group 0.000 description 1
- 125000000129 anionic group Chemical group 0.000 description 1
- 125000003710 aryl alkyl group Chemical group 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000002981 blocking agent Substances 0.000 description 1
- 239000012267 brine Substances 0.000 description 1
- HQABUPZFAYXKJW-UHFFFAOYSA-O butylazanium Chemical compound CCCC[NH3+] HQABUPZFAYXKJW-UHFFFAOYSA-O 0.000 description 1
- 238000001354 calcination Methods 0.000 description 1
- 150000001721 carbon Chemical group 0.000 description 1
- HOPSCVCBEOCPJZ-UHFFFAOYSA-N carboxymethyl(trimethyl)azanium;chloride Chemical compound [Cl-].C[N+](C)(C)CC(O)=O HOPSCVCBEOCPJZ-UHFFFAOYSA-N 0.000 description 1
- KVTHWAMPSRKSHI-UHFFFAOYSA-N carboxymethyl(trimethyl)azanium;formate Chemical compound [O-]C=O.C[N+](C)(C)CC(O)=O KVTHWAMPSRKSHI-UHFFFAOYSA-N 0.000 description 1
- MRUAUOIMASANKQ-UHFFFAOYSA-O carboxymethyl-[3-(dodecanoylamino)propyl]-dimethylazanium Chemical compound CCCCCCCCCCCC(=O)NCCC[N+](C)(C)CC(O)=O MRUAUOIMASANKQ-UHFFFAOYSA-O 0.000 description 1
- 239000003093 cationic surfactant Substances 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
- SGMZJAMFUVOLNK-UHFFFAOYSA-M choline chloride Chemical compound [Cl-].C[N+](C)(C)CCO SGMZJAMFUVOLNK-UHFFFAOYSA-M 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 239000003431 cross linking reagent Substances 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- RBSBUSKLSKHTBA-UHFFFAOYSA-N dihydroxy-methyl-phenylsilane Chemical compound C[Si](O)(O)C1=CC=CC=C1 RBSBUSKLSKHTBA-UHFFFAOYSA-N 0.000 description 1
- 239000004205 dimethyl polysiloxane Substances 0.000 description 1
- XCLIHDJZGPCUBT-UHFFFAOYSA-N dimethylsilanediol Chemical compound C[Si](C)(O)O XCLIHDJZGPCUBT-UHFFFAOYSA-N 0.000 description 1
- XJWSAJYUBXQQDR-UHFFFAOYSA-M dodecyltrimethylammonium bromide Chemical compound [Br-].CCCCCCCCCCCC[N+](C)(C)C XJWSAJYUBXQQDR-UHFFFAOYSA-M 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- RSIHJDGMBDPTIM-UHFFFAOYSA-N ethoxy(trimethyl)silane Chemical compound CCO[Si](C)(C)C RSIHJDGMBDPTIM-UHFFFAOYSA-N 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 239000003925 fat Substances 0.000 description 1
- 235000019253 formic acid Nutrition 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000000499 gel Substances 0.000 description 1
- NJZRLXNBGZBREL-UHFFFAOYSA-N glycine betaine hydrate Chemical compound [OH-].C[N+](C)(C)CC(O)=O NJZRLXNBGZBREL-UHFFFAOYSA-N 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000003999 initiator Substances 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 239000000787 lecithin Substances 0.000 description 1
- 229940067606 lecithin Drugs 0.000 description 1
- 235000010445 lecithin Nutrition 0.000 description 1
- 238000012417 linear regression Methods 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- YCWSUKQGVSGXJO-NTUHNPAUSA-N nifuroxazide Chemical group C1=CC(O)=CC=C1C(=O)N\N=C\C1=CC=C([N+]([O-])=O)O1 YCWSUKQGVSGXJO-NTUHNPAUSA-N 0.000 description 1
- 239000002736 nonionic surfactant Substances 0.000 description 1
- 239000012038 nucleophile Substances 0.000 description 1
- 150000004010 onium ions Chemical class 0.000 description 1
- 150000007530 organic bases Chemical class 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 150000003003 phosphines Chemical class 0.000 description 1
- 150000003904 phospholipids Chemical class 0.000 description 1
- 150000004714 phosphonium salts Chemical class 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 239000010695 polyglycol Substances 0.000 description 1
- 229920000151 polyglycol Polymers 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 229920000734 polysilsesquioxane polymer Polymers 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 238000007761 roller coating Methods 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 125000005372 silanol group Chemical group 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HPALAKNZSZLMCH-UHFFFAOYSA-M sodium;chloride;hydrate Chemical compound O.[Na+].[Cl-] HPALAKNZSZLMCH-UHFFFAOYSA-M 0.000 description 1
- 239000012453 solvate Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000007655 standard test method Methods 0.000 description 1
- 150000003871 sulfonates Chemical class 0.000 description 1
- WWIYWFVQZQOECA-UHFFFAOYSA-M tetramethylazanium;formate Chemical compound [O-]C=O.C[N+](C)(C)C WWIYWFVQZQOECA-UHFFFAOYSA-M 0.000 description 1
- FODHIQQNHOPUKH-UHFFFAOYSA-N tetrapropylene-benzenesulfonic acid Chemical compound CC1CC11C2=C3S(=O)(=O)OC(C)CC3=C3C(C)CC3=C2C1C FODHIQQNHOPUKH-UHFFFAOYSA-N 0.000 description 1
- 238000001757 thermogravimetry curve Methods 0.000 description 1
- 125000003944 tolyl group Chemical group 0.000 description 1
- HUZZQXYTKNNCOU-UHFFFAOYSA-N triethyl(methoxy)silane Chemical compound CC[Si](CC)(CC)OC HUZZQXYTKNNCOU-UHFFFAOYSA-N 0.000 description 1
- PQDJYEQOELDLCP-UHFFFAOYSA-N trimethylsilane Chemical compound C[SiH](C)C PQDJYEQOELDLCP-UHFFFAOYSA-N 0.000 description 1
- QHUNJMXHQHHWQP-UHFFFAOYSA-N trimethylsilyl acetate Chemical compound CC(=O)O[Si](C)(C)C QHUNJMXHQHHWQP-UHFFFAOYSA-N 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
- 239000002888 zwitterionic surfactant Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
- C09D183/04—Polysiloxanes
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J3/00—Processes of treating or compounding macromolecular substances
- C08J3/24—Crosslinking, e.g. vulcanising, of macromolecules
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/80—Siloxanes having aromatic substituents, e.g. phenyl side groups
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J2383/00—Characterised by the use of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen, or carbon only; Derivatives of such polymers
- C08J2383/04—Polysiloxanes
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J2483/00—Characterised by the use of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen, or carbon only; Derivatives of such polymers
- C08J2483/04—Polysiloxanes
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K5/00—Use of organic ingredients
- C08K5/16—Nitrogen-containing compounds
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L2205/00—Polymer mixtures characterised by other features
- C08L2205/02—Polymer mixtures characterised by other features containing two or more polymers of the same C08L -group
- C08L2205/025—Polymer mixtures characterised by other features containing two or more polymers of the same C08L -group containing two or more polymers of the same hierarchy C08L, and differing only in parameters such as density, comonomer content, molecular weight, structure
Abstract
【選択図】図1
Description
本出願は、米国特許法第119条(e)の下、その全開示内容が参照により本明細書に明確に援用される2015年4月13日に出願された「POLYSILOXANE FORMULATIONS AND COATINGS FOR OPTOELECTRONIC APPLICATIONS」と題する米国仮特許出願第62,146,593号の利益を主張するものである。
本開示は、ポリシロキサン製剤及びこれらの組成物から作製されたコーティング全般に関し、より詳細には、オプトエレクトロニクスデバイス及び用途に用いるためのポリシロキサン製剤及びコーティングに関する。
本開示は、1つ以上の溶媒及び1つ以上のケイ素系化合物を含むポリシロキサン製剤を提供する。本開示はさらに、そのような製剤から形成されたコーティングも提供する。
1つの代表的な実施形態では、組成物が提供される。組成物は、アルキル基及びアリール基のうちの少なくとも1つを含む少なくとも1つのケイ素系物質、少なくとも1つの溶媒、少なくとも1つの熱活性化触媒、並びに少なくとも1つの界面活性剤を含み、ここで、組成物は、水を含まない。より特定の実施形態では、少なくとも1つの溶媒は、水を含まない無水溶媒から成る。別のより特定の実施形態では、組成物は、0.2重量%未満の水を有する。別のより特定の実施形態では、組成物は、0重量%の水を有する。別のより特定の実施形態では、組成物は、外的な水を含まない。上記の実施形態のいずれかのうちのより特定の実施形態では、組成物はさらに、接着促進剤、末端封止剤、及び有機酸から成る群より選択される1つ以上の添加剤を含む。
1つの代表的な実施形態では、架橋された膜が提供される。架橋された膜は、上記の実施形態のいずれかに従う組成物から形成される。より特定の実施形態では、架橋された膜は、1.5μm以上の厚さを有する。別のより特定の実施形態では、架橋された膜は、3.0μm以上の厚さを有する。上記の実施形態のいずれかのうちのより特定の実施形態では、架橋された膜は、350℃以上の温度で硬化される。上記の実施形態のいずれかのうちのより特定の実施形態では、架橋された膜は、390℃以上の温度で硬化される。上記の実施形態のいずれかのうちのより特定の実施形態では、架橋された膜は、400から1000nmの可視光波長範囲内の光に対して、95%以上の透過率を有する。
1つの代表的な実施形態では、ポリシロキサン製剤は、1つ以上の溶媒、及び1つ以上のケイ素系化合物を含む。ある代表的な実施形態では、製剤はさらに、1つ以上の触媒を含む。ある代表的な実施形態では、製剤はさらに、1つ以上の界面活性剤を含む。ある代表的な実施形態では、製剤はさらに、接着促進剤、可塑剤、有機酸、及び一官能性シランなどの1つ以上のさらなる添加剤を含む。
製剤は、1つ以上の溶媒を含む。代表的な溶媒としては、所望される温度で蒸発する、及び/又は本明細書で考察される成分を容易に溶媒和させる適切な純粋有機分子又はその混合物が挙げられる。溶媒はまた、適切な純粋極性及び非極性化合物、又はその混合物を含んでもよい。本明細書で用いられる場合、「純粋」の用語は、一定の組成を有する成分を意味する。例えば、純粋な水は、H2Oのみから成る。本明細書で用いられる場合、「混合物」の用語は、塩水を含む純粋ではない成分を意味する。本明細書で用いられる場合、「極性」の用語は、分子若しくは化合物の一か所又は全体にわたって不均等な電荷、部分的な電荷、又は自発的な電荷の分布を作り出す分子又は化合物の特性を意味する。本明細書で用いられる場合、「非極性」の用語は、分子若しくは化合物の一か所又は全体にわたって均等な電荷、部分的な電荷、又は自発的な電荷の分布を作り出す分子又は化合物の特性を意味する。
製剤は、架橋してポリシロキサンを形成することができる1つ以上のケイ素系化合物を含む。代表的なケイ素系化合物は、シロキサン、シルセスキオキサン、ポリシロキサン、又はポリシルセスキオキサンを含み、メチルシロキサン、メチルシルセスキオキサン、フェニルシロキサン、フェニルシルセスキオキサン、メチルフェニルシロキサン、メチルフェニルシルセスキオキサン、ジメチルシロキサン、ジフェニルシロキサン、メチルフェニルシロキサン、ポリフェニルシルセスキオキサン、ポリフェニルシロキサン、ポリメチルフェニルシロキサン、ポリメチルフェニルシルセスキオキサン、ポリメチルシロキサン、ポリメチルシルセスキオキサン、及びこれらの組み合わせなどである。ある実施形態では、少なくとも1つのケイ素系化合物は、ポリフェニルシルセスキオキサン、ポリフェニルシロキサン、フェニルシロキサン、フェニルシルセスキオキサン、メチルフェニルシロキサン、メチルフェニルシルセスキオキサン、ポリメチルフェニルシロキサン、ポリメチルフェニルシルセスキオキサン、ポリメチルシロキサン、ポリメチルシルセスキオキサン、又はこれらの組み合わせを含む。
R1 xSi(OR2)y
式中、R1は、アルキル、アルケニル、アリール、又はアラルキル基であり、xは、0から2の整数であり、並びにR2は、アルキル基又はアシル基であり、yは、1から4の整数である。さらに考慮される物質としては、以下の一般式のシルセスキオキサンポリマーが挙げられ、
(C6H5SiO1.5)x
式中、xは、約4を超える整数である。
ある代表的な実施形態では、製剤は、1つ以上の触媒を含む。ある実施形態では、触媒は、熱活性化触媒である。本明細書で用いられる場合、熱活性化触媒とは、高められた温度など、特定の温度又はそれ以上で活性化される触媒を意味する。例えば、ある温度(室温など)では、組成物は低分子量を維持しており、従って、表面に対する良好な平坦化能が得られる。温度が上昇されると(50℃超など)、熱活性化触媒は、2つのSi−OH官能基間の縮合反応を触媒し、その結果、より密な構造となり、場合によっては、全体的な性能が向上される。適切な縮合触媒は、安定なシリケート溶液を維持することを補助することができる触媒を含む。金属イオンを含まない代表的な触媒は、アンモニウム化合物(四級アンモニウム塩など)、アミン、ホスホニウム化合物、又はホスフィン化合物などのオニウム化合物及び求核剤を含み得る。
ある実施形態では、触媒は、比較的分子的に「小さい」か、又は四級アンモニウム塩などの比較的小さいカチオンを生成する触媒である。ある実施形態では、1つ以上の触媒は、酢酸テトラメチルアンモニウム(TMAA)、水酸化テトラメチルアンモニウム(TMAH)、水酸化テトラブチルアンモニウム(TBAH)、酢酸テトラブチルアンモニウム(TBAA)、酢酸セチルトリメチルアンモニウム(CTAA)、硝酸テトラメチルアンモニウム(TMAN)、その他のアンモニウム系触媒、アミン系及び/又はアミン生成触媒、並びにこれらの組み合わせから選択される。その他の代表的な触媒としては、塩化(2‐ヒドロキシエチル)トリメチルアンモニウム、水酸化(2‐ヒドロキシエチル)トリメチルアンモニウム、酢酸(2‐ヒドロキシエチル)トリメチルアンモニウム、ギ酸(2‐ヒドロキシエチル)トリメチルアンモニウム、硝酸(2‐ヒドロキシエチル)トリメチルアンモニウム、安息香酸(2‐ヒドロキシエチル)トリメチルアンモニウム、ギ酸テトラメチルアンモニウム、及びこれらの組み合わせが挙げられる。その他の代表的な触媒としては、塩化(カルボキシメチル)トリメチルアンモニウム、水酸化(カルボキシメチル)トリメチルアンモニウム、ギ酸(カルボキシメチル)トリメチルアンモニウム、及び酢酸(カルボキシメチル)トリメチルアンモニウムが挙げられる。
ある代表的な実施形態では、製剤は、1つ以上の界面活性剤を含む。界面活性剤は、表面張力を低下させるために添加されてよい。本明細書で用いられる場合、「界面活性剤」の用語は、H2O若しくは他の液体に溶解された場合に表面張力を低下させる、又は2つの液体間若しくは液体と固体との間の界面張力を低下させるいずれの化合物をも意味する。考慮される界面活性剤としては、少なくとも1つのアニオン性界面活性剤、カチオン性界面活性剤、非イオン性界面活性剤、双性イオン性界面活性剤、又はこれらの組み合わせが挙げられ得る。界面活性剤は、直接組成物中に溶解されてよく、又は最終組成物の形成前に、組成物成分(少なくとも1つのケイ素系化合物、少なくとも1つの触媒、少なくとも1つの溶媒)のうちの1つと共に添加されてもよい。考慮される界面活性剤としては、BYK307(ポリエーテル修飾ポリジメチルシロキサン、BYK−Chemie社)などのポリエーテル修飾ポリジメチルシロキサン、ドデシルベンゼンスルホネート、テトラプロピレンベンゼンスルホネート、ドデシルベンゼンスルホネートなどのスルホネート、Fluorad FC−93及びL−18691(3M社)などのフッ素化アニオン性界面活性剤、FC−4430(3M社)、FC−4432(3M社)、及びL−18242(3M社)などのフッ素化非イオン性界面活性剤、臭化ドデシルトリメチルアンモニウム又は臭化セチルトリメチルアンモニウムなどの四級アミン、アルキルフェノキシポリエチレンオキシドアルコール、アルキルフェノキシポリグリシドール、アセチリン系アルコール(acetylinic alcohols)、Tergitol TMN−6(Dow社)及びTergitol minifoam 2×(Dow社)などのポリグリコールエーテル、Brij−30(Aldrich社)、Brij−35(Aldrich社)、Brij−58(Aldrich社)、Brij−72(Aldrich社)、Brij−76(Aldrich社)、Brij−78(Aldrich社)、Brij−98(Aldrich社)、及びBrij−700(Aldrich社)などのポリオキシエチレン脂肪エーテル、ココアミドプロピルベタインなどのベタイン、スルホベタイン、並びにジオクタノイルホスファチジルコリン及びレシチンなどの合成リン脂質、並びにこれらの組み合わせが挙げられ得る。
ある代表的な実施形態では、製剤は、接着促進剤、末端封止剤、及び有機酸などの1つ以上のさらなる添加剤を含んでよい。
ある代表的な実施形態では、ポリシロキサン製剤は、エレクトロニクス、オプトエレクトロニクス、若しくはディスプレイデバイスの中又は上に位置する表面上にポリシロキサンコーティングを形成する。
ある代表的な実施形態では、ポリシロキサンコーティングは、小さくは、0.1μm、0.3μm、0.5μm、1μm、1.5μm、大きくは、2μm、2.5μm、3μm、3.5μm、4μm、若しくはそれ以上、又は上述の値のいずれか2つの間で定められるいずれの範囲内であってもよい厚さを有する。
ある代表的な実施形態では、ケイ素系化合物は、2つ以上の重合工程から形成されてよい。
例1−アルキル炭素の含有量が異なる製剤
ポリマーA:フェニルTEOSを、酸触媒及び水の存在下、イソプロピルアルコール溶媒中、100℃で24時間反応させた。反応後、溶媒を留去して、固体ポリマーを得た。次に、ポリマーを、適切な溶媒系から溶解及び再析出させ、50℃で一晩真空乾燥し、粉砕して粉末とした。
製剤3:85%のポリマーB及び15%のポリマーAを用いた以外は、製剤1と同様にして製剤を作製した。
例1で作製した比較製剤C(「比較製剤C」)及び製剤5(「製剤5」)のサンプルを、以下の表2に示されるように、シリコン基材上に様々な厚さで堆積させた。次に、2つの反復実験サンプルを、窒素雰囲気中、380℃で30分間硬化し、続いて、空気中、380℃で10分間の第二の硬化を行った。各硬化の後に、膜を検査し、膜にクラックが発生したかどうかを判定した。結果を以下の表2に示す。
次に、約3.6μmでの製剤5の類似の例を、空気中、様々な温度で硬化した。結果を表6に示す。
例1で作製した比較製剤C及び製剤5のサンプルを、以下の表7に示されるように、シリコン又はガラス基材上に様々な厚さで堆積させた。次に、サンプルを、窒素雰囲気中、380℃で30分間硬化し、続いて、第二の同一の硬化を行った。各硬化の後に、膜を検査し、膜にクラックが発生したかどうかを判定した。結果を以下の表7に示す。
例2に示されるように、製剤5、6、及び7は、様々な基材上でクラックを発生させることなく、異なる条件下で硬化されて、比較製剤Cよりも非常に大きい厚さの膜を形成することが可能であった。製剤5の膜は、380℃の硬化温度では、3μm以上の厚さまで、それよりも低い硬化温度では、3.6μmまで安定であった。
以下の表9に示されるように、例1で作製したコントロール比較製剤C、並びに製剤8、9、及び10のサンプルを、様々な厚さで基材上に堆積させ、空気中で硬化した。各サンプルに対するクラック限界値を表9に示す。
例3に示されるように、製剤8、9、及び10は、異なる条件下で硬化された場合に、クラックを発生させることなく、比較製剤Cよりも非常に大きい厚さの膜を形成することが可能であった。
例1で作製した比較製剤C及び製剤5の6000Åサンプルを、各々、ガラス基材上に堆積させ、350℃で1時間硬化した。結果を図1及び以下の表10に示す。
例1で作製した比較製剤C及び製剤5の製剤の粘度を、25℃で特定した。結果を以下の表1に示す。
例1で作製した比較製剤C及び製剤5の製剤のサンプルを、基材上に1.9μmで堆積させ、窒素中、390℃で30分間硬化した。これらのコーティングに、室温と400℃との間の加熱冷却サイクルを施した。温度の関数としての残留応力を、比較製剤Cのコーティングについては図3Aに、製剤5については図3Bに示す。各コーティングにおける冷却線の直線回帰も示す。図3に示されるように、製剤5のコーティングにおける冷却線の傾き(−0.0947Mpa/℃)は、比較製剤Cのコーティングの場合(−0.0989Mpa/℃)よりも小さい。いかなる特定の理論にも束縛されるものではないが、このことが、製剤5のより高いクラック限界に寄与しているものと考えられる。
例1で作製した比較製剤C及び製剤5の製剤のサンプルを、基材上に堆積させ、380℃で30分間硬化した。室温から約380℃までコーティングを加熱して熱重量分析(TGA)を行った。結果を図5に示す。図5に示されるように、コーティングは、ほぼ同一のTGAプロファイルを有していた。
例1で作製した比較製剤C及び製剤5の製剤のサンプルを、基材上に堆積させ、空気中、230℃で30分間焼成し、続いて、空気中、380℃で1時間硬化した。焼成工程及び硬化工程の後に各コーティングの厚さを測定し、硬化の過程での収縮割合を特定した。結果を、以下の表13に示す。
例1で作製した比較製剤C及び製剤5の製剤のサンプルを、基材上に1.9μmで堆積させ、窒素中、390℃で30分間硬化した。これらのコーティング厚さを、N&K社のツール又はNanometrics社のツールを用いてエリプソメトリで測定した。
例1で作製した比較製剤C、製剤5、及び製剤8の製剤のサンプルを、基材上に堆積させ、230℃で硬化した。各サンプルを、TOK−106に70℃で10分間、又は2.38% TMAHに室温で10分間暴露した。結果を以下の表15に示す。負のエッチング速度は、膜膨潤の結果である。
例1で作製した製剤5の製剤のサンプルを、シリコン上に堆積させ、記載のように1時間硬化した。初期厚さを測定し、続いて、コーティングを、NMP溶液に70℃で10分間暴露した。再度コーティングの測定を行い、エッチング速度(Å/分)を特定した。次に、コーティングを、ピラニア溶液、濃硫酸と過酸化水素との3:1混合物、に70℃で10分間暴露した。再度コーティングの測定を行い、エッチング速度(Å/分)を特定した。続いて、コーティングを、2.38% TMAH溶液に室温で10分間暴露した。再度コーティングの測定を行い、エッチング速度(Å/分)を特定した。湿式エッチング試験の結果を以下の表16に示す。負のエッチング値は、膜膨潤によるものである。
例11−膜のプラズマエッチング速度の研究
次に、例1で作製した比較製剤C及び製剤5の製剤のサンプルを、基材上に堆積させ、表18に挙げたRPMでスピンコーティングし、230℃で焼成し、続いて、以下の表13に示されるようにして硬化した。次に、コーティングを、200ワットの出力、200ミリトルの圧力、並びに15sccmのSF6、20sccmのO2、及び20sccmのArでプラズマエッチングした。結果を以下の表18に示す。
製剤13、オハイオ州ペリーズバーグのTechneglas Technical Products社から入手可能であるMTEOSから誘導されたポリシロキサン樹脂GR−650Fを、所望される固体充填%でPGMEA溶媒中に溶解し、2つのサンプルに分割した。第一のサンプルに、少量の希TMAN水溶液を添加した。第二のサンプルに、PGPE溶媒に溶解した等量のTMANを添加した。PGMEA溶媒及びBYK界面活性剤を添加することで、各サンプルからコーティング製剤を形成した。各コーティングを、1000〜1500rpmで基材上にスピンコーティングして、所望される厚さの膜を堆積させ、類似の条件下で硬化した。これら2つのコーティングに対する屈折率(1.4)及びテープ試験による接着性能(100%合格)は同一であり、このことから、コーティングの光学的又は物理的特性に影響を与えることなく、外的な水をまったく用いずにコーティング製剤を製剤可能であることが示唆される。
製剤14、オハイオ州ペリーズバーグのTechneglas Technical Products社から入手可能であるMTEOSから誘導されたポリシロキサン樹脂GR−650Fを、所望される固体充填%でPGMEA溶媒中に溶解した。少量の希TMAN水溶液、PGMEA溶媒、BYK界面活性剤、及びVTEOSを添加した。コーティングを、1000〜1500rpmで基材上にスピンコーティングして、所望される厚さの膜を堆積させ、類似の条件下で硬化した。
製剤15−分子量1100AMUであるフェニルTEOS系ポリマーのPGMEA中45重量%溶液を、250ppmの塩基性触媒TBAHの存在下、100℃で2時間反応させた。反応後、得られた樹脂は、5000AMUの分子量を有していた。製剤15を、シリコン基材上にスピンコーティングし、380℃で1時間硬化した。得られたコーティングは、4μm超のクラック限界を有していた。
Claims (10)
- 1000AMUから10000AMUの重量平均分子量を有する、アルキル基及びアリール基を含む第一のケイ素含有樹脂、
900AMUから5000AMUの重量平均分子量を有する、アリール基を含む第二のケイ素含有樹脂、
少なくとも1つの溶媒、及び
少なくとも1つの熱活性化触媒、
を含む架橋性組成物。 - 少なくとも1つの界面活性剤をさらに含む、請求項1に記載の架橋性組成物。
- 前記第一のケイ素含有樹脂が、メチルシロキサン及びフェニルシロキサンを含み、前記第二のケイ素含有樹脂が、フェニルシロキサンを含む、請求項1に記載の架橋性組成物。
- 前記第一のケイ素含有樹脂が、ジメチルシロキサンをさらに含む、請求項1に記載の架橋性組成物。
- 前記第一及び第二のケイ素含有樹脂中の炭素原子の総数に基づいて、アルキル基中に含有される炭素原子の割合が、10%超から100%である、請求項1に記載の架橋性組成物。
- 1.5μm以上の厚さを有する、請求項1に記載の架橋性組成物から形成された架橋された膜。
- 請求項6に記載の架橋された膜を含むデバイスであって、
トランジスタ、発光ダイオード、カラーフィルター、光起電力セル、フラットパネルディスプレイ、湾曲ディスプレイ、タッチスクリーンディスプレイ、x線検出器、アクティブ又はパッシブマトリックスOLEDディスプレイ、アクティブマトリックス薄膜液晶ディスプレイ、電気泳動ディスプレイ、CMOSイメージセンサー、及びこれらの組み合わせから成る群より選択され、前記架橋された膜が、不動態化層、平坦化層、バリア層、又はこれらの組み合わせを形成する、デバイス。 - 1000AMUから10000AMUの重量平均分子量を有する、アルキル基及びアリール基を含む第一のシロキサン樹脂、900AMUから5000AMUの重量平均分子量を有する、アリール基を含む第二のシロキサン樹脂、溶媒、及び、熱活性化触媒を混合して、架橋性組成物を形成すること、
前記組成物を基材上に堆積させること、及び
前記架橋性組成物を、350℃以上の温度で硬化して、1.5μm以上の厚さを有する架橋された膜を形成すること、
を含む、組成物を形成する方法。 - 前記架橋された膜が、3.0μm以上の厚さを有する、請求項8に記載の方法。
- 前記第一のケイ素含有樹脂が、メチルシロキサン及びフェニルシロキサンを含み、前記第二のケイ素含有樹脂が、フェニルシロキサンを含み、前記方法が、少なくとも1000AMUの分子量を有するフェニルTEOS系ポリマーを、塩基性触媒の存在下、溶媒中で反応させて、前記第二のケイ素含有樹脂を形成することをさらに含む、請求項8に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201562146593P | 2015-04-13 | 2015-04-13 | |
US62/146,593 | 2015-04-13 | ||
PCT/US2016/020373 WO2016167892A1 (en) | 2015-04-13 | 2016-03-02 | Polysiloxane formulations and coatings for optoelectronic applications |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2018516998A true JP2018516998A (ja) | 2018-06-28 |
JP2018516998A5 JP2018516998A5 (ja) | 2019-03-14 |
JP6803842B2 JP6803842B2 (ja) | 2020-12-23 |
Family
ID=57126335
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2017536545A Active JP6803842B2 (ja) | 2015-04-13 | 2016-03-02 | オプトエレクトロニクス用途のためのポリシロキサン製剤及びコーティング |
Country Status (7)
Country | Link |
---|---|
US (1) | US10544329B2 (ja) |
EP (1) | EP3194502A4 (ja) |
JP (1) | JP6803842B2 (ja) |
KR (1) | KR102595033B1 (ja) |
CN (1) | CN106065278B (ja) |
TW (1) | TWI716384B (ja) |
WO (1) | WO2016167892A1 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2020096168A (ja) * | 2018-09-21 | 2020-06-18 | 日産化学株式会社 | 固体撮像素子用平坦化膜形成樹脂組成物 |
KR20230154957A (ko) | 2021-03-25 | 2023-11-09 | 가부시키가이샤 닛폰 쇼쿠바이 | 폴리실세스퀴옥산 조성물, 및, 경화물 |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10947412B2 (en) | 2017-12-19 | 2021-03-16 | Honeywell International Inc. | Crack-resistant silicon-based planarizing compositions, methods and films |
US11015082B2 (en) * | 2017-12-19 | 2021-05-25 | Honeywell International Inc. | Crack-resistant polysiloxane dielectric planarizing compositions, methods and films |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010532792A (ja) * | 2007-04-10 | 2010-10-14 | ハネウェル・インターナショナル・インコーポレーテッド | オプトエレクトロニクスデバイス用の組成物、層、及びフィルム、並びにこれらの使用 |
WO2011162294A1 (ja) * | 2010-06-24 | 2011-12-29 | 積水化学工業株式会社 | 光半導体装置用封止剤及びそれを用いた光半導体装置 |
JP2012222202A (ja) * | 2011-04-11 | 2012-11-12 | Sekisui Chem Co Ltd | 光半導体装置用ダイボンド材及びそれを用いた光半導体装置 |
JP2013137512A (ja) * | 2011-11-29 | 2013-07-11 | Shin Etsu Chem Co Ltd | ケイ素含有レジスト下層膜形成用組成物及びパターン形成方法 |
JP2013167669A (ja) * | 2012-02-14 | 2013-08-29 | Shin Etsu Chem Co Ltd | ケイ素含有表面改質剤、これを含むレジスト下層膜形成用組成物、及びパターン形成方法 |
Family Cites Families (931)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US35368A (en) | 1862-05-27 | Improvement in shutter-fastenings | ||
US172896A (en) | 1876-02-01 | Improvement in hydraulic elevators | ||
US35239A (en) | 1862-05-13 | Improved mode of securing chimneys to lamps | ||
US58929A (en) | 1866-10-16 | Improved keeper for bolts | ||
US106376A (en) | 1870-08-16 | Improvement in harrow and cultivator | ||
US31987A (en) | 1861-04-09 | Machinist s instrument foe determining geometrical lines | ||
US35447A (en) | 1862-06-03 | Coal oil lamp chimney | ||
US677386A (en) | 1900-08-10 | 1901-07-02 | Chief Husker And Shredder Company | Corn husker and shredder. |
GB385241A (en) | 1932-08-12 | 1932-12-22 | L A Young Company | Improvements in tubular tapered steel shafts particularly for golf clubs |
GB601288A (en) | 1945-02-19 | 1948-05-03 | Dempster Brothers Inc | Transporting and dumping equipment |
US2783263A (en) | 1954-11-22 | 1957-02-26 | Dow Corning | Halocarboxysilanes |
CA586038A (en) | 1956-03-26 | 1959-10-27 | General Electric Company | Organopolysiloxane resins |
GB1316144A (en) | 1963-08-21 | 1973-05-09 | Mallory & Co Inc P R | Capacitor having a cooperating dielectric |
US3294737A (en) | 1963-12-23 | 1966-12-27 | Gen Electric | Organopolysiloxanes |
US5270285A (en) | 1965-02-28 | 1993-12-14 | Dai Nippon Insatsu Kabushiki Kaisha | Sheet for heat transference |
US3647508A (en) | 1968-08-27 | 1972-03-07 | King Seeley Thermos Co | Method of making patterned metal coatings by selective etching of metal |
US3615272A (en) | 1968-11-04 | 1971-10-26 | Dow Corning | Condensed soluble hydrogensilsesquioxane resin |
US3635529A (en) | 1969-06-24 | 1972-01-18 | Walter R Nass | Motor vehicle wheel assembly |
US3784378A (en) | 1971-10-18 | 1974-01-08 | Du Pont | Double-exposure method for producing reverse images in photopolymers |
US3884702A (en) | 1972-12-14 | 1975-05-20 | Unitika Ltd | Photosensitive polyamide composition |
US3929489A (en) | 1973-09-14 | 1975-12-30 | Eastman Kodak Co | Lithographic plates having radiation sensitive elements developable with aqueous alcohol |
US4043812A (en) | 1973-11-19 | 1977-08-23 | Xerox Corporation | Electrostatographic imaging member and process using anthracene functional polymers |
US3873361A (en) | 1973-11-29 | 1975-03-25 | Ibm | Method of depositing thin film utilizing a lift-off mask |
US3925077A (en) | 1974-03-01 | 1975-12-09 | Horizons Inc | Photoresist for holography and laser recording with bleachout dyes |
US4191571A (en) | 1974-04-26 | 1980-03-04 | Hitachi, Ltd. | Method of pattern forming in a photosensitive composition having a reciprocity law failing property |
US4018606A (en) | 1974-05-03 | 1977-04-19 | Eastman Kodak Company | Organic azo pigment sensitizers for photoconductive layers |
US4018607A (en) | 1974-05-03 | 1977-04-19 | Eastman Kodak Company | Crystalline organic pigment sensitizers for photoconductive layers |
US4053313A (en) | 1975-06-03 | 1977-10-11 | E. I. Du Pont De Nemours And Company | Process for image reproduction using multilayer photosensitive solvent processable elements |
US4048146A (en) | 1975-10-14 | 1977-09-13 | Eastman Kodak Company | Radiation sensitive polymers of oxygen-substituted maleimides and elements containing same |
US4052367A (en) | 1975-10-14 | 1977-10-04 | Eastman Kodak Company | Radiation sensitive polymers of oxygen-substituted maleimides and elements containing same |
US4102683A (en) | 1977-02-10 | 1978-07-25 | Rca Corp. | Nonreflecting photoresist process |
US5655947A (en) | 1977-03-17 | 1997-08-12 | Applied Elastomerics, Inc. | Ultra-soft, ultra-elastic gel airfoils |
US5334646B1 (en) | 1977-03-17 | 1998-09-08 | Applied Elastomerics Inc | Thermoplastic elastomer gelatinous articles |
US5239723A (en) | 1977-03-17 | 1993-08-31 | Applied Elastomerics, Inc. | Gelatinous elastomer swabs |
US5324222A (en) | 1977-03-17 | 1994-06-28 | Applied Elastomerics, Inc. | Ultra-soft, ultra-elastic airfoils |
US5336708A (en) | 1977-03-17 | 1994-08-09 | Applied Elastomerics, Inc. | Gelatinous elastomer articles |
US4369284A (en) | 1977-03-17 | 1983-01-18 | Applied Elastomerics, Incorporated | Thermoplastic elastomer gelatinous compositions |
US5508334A (en) | 1977-03-17 | 1996-04-16 | Applied Elastomerics, Inc. | Thermoplastic elastomer gelatinous compositions and articles |
US5262468A (en) | 1977-03-17 | 1993-11-16 | Applied Elastomerics, Inc. | Thermoplastic elastomer gelatinous compositions |
US5624294A (en) | 1977-03-17 | 1997-04-29 | Applied Elastomerics, Inc. | Humdinger, gel spinner |
US5153254A (en) | 1977-03-17 | 1992-10-06 | Applied Elastomerics, Inc. | Reusable lint remover |
US4618213A (en) | 1977-03-17 | 1986-10-21 | Applied Elastomerics, Incorporated | Gelatinous elastomeric optical lens, light pipe, comprising a specific block copolymer and an oil plasticizer |
US5475890A (en) | 1977-03-17 | 1995-12-19 | Applied Elastomerics, Inc. | Gelatinous elastomer swabs |
GB1604414A (en) | 1977-07-27 | 1981-12-09 | Raychem Ltd | Silicone resin |
JPS6058467B2 (ja) | 1977-10-22 | 1985-12-20 | 株式会社リコー | 電子写真用感光体 |
US4413088A (en) | 1978-11-30 | 1983-11-01 | General Electric Co. | Silicone resin coating composition especially suited for primerless adhesion to cast acrylics |
JPS55165922A (en) | 1979-06-14 | 1980-12-24 | Daicel Chem Ind Ltd | Production of thermosetting organopolysiloxane |
US4299938A (en) | 1979-06-19 | 1981-11-10 | Ciba-Geigy Corporation | Photopolymerizable and thermally polymerizable compositions |
US4349609A (en) | 1979-06-21 | 1982-09-14 | Fujitsu Limited | Electronic device having multilayer wiring structure |
JPS5850417B2 (ja) | 1979-07-31 | 1983-11-10 | 富士通株式会社 | 半導体装置の製造方法 |
US4257826A (en) | 1979-10-11 | 1981-03-24 | Texas Instruments Incorporated | Photoresist masking in manufacture of semiconductor device |
US4290896A (en) | 1980-05-27 | 1981-09-22 | Dow Corning Corporation | Dewatering fine coal slurries using organopolysiloxanes |
US4935583A (en) | 1980-05-30 | 1990-06-19 | Kyle James C | Insulated conductor with ceramic-connected elements |
US4483107A (en) | 1980-06-17 | 1984-11-20 | Konishiroku Photo Industry Co., Ltd. | Polishing method for electrophotographic photoconductive member |
ATE9811T1 (de) | 1980-07-14 | 1984-10-15 | Akzo N.V. | Einen blockierten katalysator enthaltende waermehaertbare ueberzugszusammensetzung. |
EP0046695B1 (en) | 1980-08-26 | 1986-01-08 | Japan Synthetic Rubber Co., Ltd. | Ladder-like lower alkylpolysilsesquioxanes and process for their preparation |
JPS5760330A (en) | 1980-09-27 | 1982-04-12 | Fujitsu Ltd | Resin composition |
US4399255A (en) | 1980-12-22 | 1983-08-16 | Avtex Fibers Inc. | Alloy rayon fibers of regenerated cellulose and copolymeric acrylic acid salts |
US4515828A (en) | 1981-01-02 | 1985-05-07 | International Business Machines Corporation | Planarization method |
US4423135A (en) | 1981-01-28 | 1983-12-27 | E. I. Du Pont De Nemours & Co. | Preparation of photosensitive block copolymer elements |
US4413052A (en) | 1981-02-04 | 1983-11-01 | Ciba-Geigy Corporation | Photopolymerization process employing compounds containing acryloyl group and anthryl group |
US4419437A (en) | 1981-02-11 | 1983-12-06 | Eastman Kodak Company | Image-forming compositions and elements containing ionic polyester dispersing agents |
US4312970A (en) | 1981-02-20 | 1982-01-26 | Dow Corning Corporation | Silazane polymers from {R'3 Si}2 NH and organochlorosilanes |
US4362809A (en) | 1981-03-30 | 1982-12-07 | Hewlett-Packard Company | Multilayer photoresist process utilizing an absorbant dye |
US4348471A (en) | 1981-06-15 | 1982-09-07 | Polychrome Corporation | Positive acting composition yielding pre-development high visibility image after radiation exposure comprising acid free novolak, diazo oxide and acid sensitive dyestuff |
EP0076656B1 (en) | 1981-10-03 | 1988-06-01 | Japan Synthetic Rubber Co., Ltd. | Solvent-soluble organopolysilsesquioxanes, processes for producing the same, and compositions and semiconductor devices using the same |
US4783347A (en) | 1981-12-01 | 1988-11-08 | General Electric Company | Method for primerless coating of plastics |
US4442197A (en) | 1982-01-11 | 1984-04-10 | General Electric Company | Photocurable compositions |
JPS58171416A (ja) | 1982-04-02 | 1983-10-08 | Hitachi Ltd | 耐熱性重合体 |
US5670295A (en) | 1982-07-30 | 1997-09-23 | Namba; Kenryo | Optical recording medium |
DE3231147A1 (de) | 1982-08-21 | 1984-02-23 | Basf Ag, 6700 Ludwigshafen | Positiv arbeitendes verfahren zur herstellung von reliefbildern oder resistmustern |
US6194121B1 (en) | 1982-09-25 | 2001-02-27 | Tdk Corp. | Optical recording medium |
JPH0612452B2 (ja) | 1982-09-30 | 1994-02-16 | ブリュ−ワ−・サイエンス・インコ−ポレイテッド | 集積回路素子の製造方法 |
US4910122A (en) | 1982-09-30 | 1990-03-20 | Brewer Science, Inc. | Anti-reflective coating |
US4822718A (en) | 1982-09-30 | 1989-04-18 | Brewer Science, Inc. | Light absorbing coating |
US4434127A (en) | 1982-12-09 | 1984-02-28 | Dow Corning Corporation | Heat curable polydiorganosiloxane compositions having enhanced release upon cure |
JPS59109565A (ja) | 1982-12-16 | 1984-06-25 | Fujitsu Ltd | コ−テイング樹脂溶液およびその製造方法 |
CA1255952A (en) | 1983-03-04 | 1989-06-20 | Akihiro Furuta | Positive type photoresist composition |
JPS59226346A (ja) | 1983-06-07 | 1984-12-19 | Fuotopori Ouka Kk | プリント回路の製造方法 |
KR890003903B1 (ko) | 1983-06-29 | 1989-10-10 | 가부시끼가이샤 히다찌세이사꾸쇼 | 패턴 형성 방법 |
US4430153A (en) | 1983-06-30 | 1984-02-07 | International Business Machines Corporation | Method of forming an RIE etch barrier by in situ conversion of a silicon containing alkyl polyamide/polyimide |
US4617252A (en) | 1983-07-01 | 1986-10-14 | Philip A. Hunt Chemical Corporation | Antireflective coatings for use in the manufacture of semi-conductor devices, methods and solutions for making such coatings, and the method for using such coatings to absorb light in ultraviolet photolithography processes |
DE3324795A1 (de) | 1983-07-09 | 1985-01-17 | Merck Patent Gmbh, 6100 Darmstadt | Negativ arbeitende fotoresistzusammensetzungen mit strahlungsabsorbierenden zusaetzen |
DE3344202A1 (de) | 1983-12-07 | 1985-06-20 | Merck Patent Gmbh, 6100 Darmstadt | Positiv-fotoresistzusammensetzungen |
GB8333901D0 (en) | 1983-12-20 | 1984-02-01 | Minnesota Mining & Mfg | Radiationsensitive compositions |
GB8401016D0 (en) | 1984-01-14 | 1984-02-15 | Hagen Perennatorwerk | Organopolysiloxane compositions |
EP0152377B1 (de) | 1984-02-10 | 1987-12-09 | Ciba-Geigy Ag | Härtbare Zusammensetzung und deren Verwendung |
DE3565013D1 (en) | 1984-02-10 | 1988-10-20 | Ciba Geigy Ag | Process for the preparation of a protection layer or a relief pattern |
JPS60177029A (ja) | 1984-02-21 | 1985-09-11 | Toray Silicone Co Ltd | オルガノポリシロキサン組成物の硬化方法 |
US4752649A (en) | 1984-02-29 | 1988-06-21 | Bowling Green State University | Perester photoinitiators |
US4831188A (en) | 1984-02-29 | 1989-05-16 | Bowling Green State University | Perester photoinitiators |
US4702990A (en) | 1984-05-14 | 1987-10-27 | Nippon Telegraph And Telephone Corporation | Photosensitive resin composition and process for forming photo-resist pattern using the same |
EP0163538B1 (en) | 1984-05-30 | 1989-11-23 | Fujitsu Limited | Pattern-forming material and its production and use |
GB8414867D0 (en) | 1984-06-11 | 1984-07-18 | Minnesota Mining & Mfg | Pre-press proofing system |
US4767571A (en) | 1984-06-27 | 1988-08-30 | Fuji Photo Film Co., Ltd. | Infrared absorbent |
US4705739A (en) | 1984-07-16 | 1987-11-10 | Minnesota Mining And Manufacturing Company | Graphic arts imaging constructions using vapor-deposited colorant and metalloid layers with overlying photosensitive resist layer |
US4763966A (en) | 1984-07-16 | 1988-08-16 | Fuji Photo Film Co., Ltd. | Infrared absorbent |
US5674648A (en) | 1984-08-06 | 1997-10-07 | Brewer Science, Inc. | Anti-reflective coating |
US4657965A (en) | 1984-10-22 | 1987-04-14 | Toshiba Silicone Co., Ltd. | Silicone elastomer composition |
US4594309A (en) | 1984-10-31 | 1986-06-10 | Allied Corporation | α,β Diketone containing polymers as positive photoresist compositions |
US4670299A (en) | 1984-11-01 | 1987-06-02 | Fujitsu Limited | Preparation of lower alkyl polysilsesquioxane and formation of insulating layer of silylated polymer on electronic circuit board |
US4587138A (en) | 1984-11-09 | 1986-05-06 | Intel Corporation | MOS rear end processing |
US4620986A (en) | 1984-11-09 | 1986-11-04 | Intel Corporation | MOS rear end processing |
US4705729A (en) | 1984-11-19 | 1987-11-10 | Hewlett-Packard Company | Method for photochemically enhancing resolution in photolithography processes |
IT1177373B (it) | 1984-12-06 | 1987-08-26 | Bioresearch Spa | Sali della 5'-metiltio-5'-deossiadenosina con acidi solfonici a lunga catena alchilica |
US4708925A (en) | 1984-12-11 | 1987-11-24 | Minnesota Mining And Manufacturing Company | Photosolubilizable compositions containing novolac phenolic resin |
KR900005404B1 (ko) | 1985-03-07 | 1990-07-28 | 휴우즈 에어크라프트 캄파니 | 이온 빔 및 전자 빔 석판 인쇄용 폴리실록산 내식막 |
FR2579552B1 (fr) | 1985-03-27 | 1990-06-08 | Honda Motor Co Ltd | Dispositif de direction des roues avant et arriere pour vehicule |
US4745169A (en) | 1985-05-10 | 1988-05-17 | Hitachi, Ltd. | Alkali-soluble siloxane polymer, silmethylene polymer, and polyorganosilsesquioxane polymer |
EP0204963B1 (en) | 1985-05-10 | 1993-01-13 | Hitachi, Ltd. | Use of Alkali-Soluble Polyorganosilsesquioxane Polymers in a resist for preparing electronics parts. |
US4663414A (en) | 1985-05-14 | 1987-05-05 | Stauffer Chemical Company | Phospho-boro-silanol interlayer dielectric films and preparation |
JPS6289907A (ja) | 1985-06-19 | 1987-04-24 | Sumitomo Bakelite Co Ltd | 偏光膜一体型透明導電性フイルム |
US4595599A (en) | 1985-06-21 | 1986-06-17 | Advanced Chemical Technologies Company | Luminescent silane |
US4674176A (en) | 1985-06-24 | 1987-06-23 | The United States Of America As Represented By The United States Department Of Energy | Planarization of metal films for multilevel interconnects by pulsed laser heating |
US4609614A (en) | 1985-06-24 | 1986-09-02 | Rca Corporation | Process of using absorptive layer in optical lithography with overlying photoresist layer to form relief pattern on substrate |
US4814578A (en) | 1985-06-24 | 1989-03-21 | The United States Of America As Represented By The Department Of Energy | Planarization of metal films for multilevel interconnects |
US4681795A (en) | 1985-06-24 | 1987-07-21 | The United States Of America As Represented By The Department Of Energy | Planarization of metal films for multilevel interconnects |
US4816049A (en) | 1985-07-12 | 1989-03-28 | Hoya Corporation | Process of surface treating laser glass |
JPS6243424A (ja) | 1985-08-20 | 1987-02-25 | Shin Etsu Chem Co Ltd | シルセスキオキサン乳濁液の製造方法 |
US5034189A (en) | 1985-08-27 | 1991-07-23 | The Regents Of The University Of California | Fluorescent probe for rapid measurement of analyte concentration |
EP0217137B1 (en) | 1985-08-29 | 1992-04-08 | E.I. Du Pont De Nemours And Company | Photopolymerizable composition of acrylic copolymer containing dicyclopentenyl acrylate or methacrylate |
US4786569A (en) | 1985-09-04 | 1988-11-22 | Ciba-Geigy Corporation | Adhesively bonded photostructurable polyimide film |
US4923638A (en) | 1985-09-30 | 1990-05-08 | Fuji Photo Film Co., Ltd. | Near infrared absorbing composition |
US4723978A (en) | 1985-10-31 | 1988-02-09 | International Business Machines Corporation | Method for a plasma-treated polysiloxane coating |
KR910003169B1 (ko) | 1985-11-12 | 1991-05-20 | 가부시끼가이샤 한도다이 에네르기 겐뀨소 | 반도체 장치 제조 방법 및 장치 |
DE3689949T2 (de) | 1985-12-09 | 1995-03-16 | Nippon Paint Co Ltd | Druckmaterial auf der Basis eines lichtempfindlichen Harzes. |
JP2619358B2 (ja) | 1986-01-08 | 1997-06-11 | 株式会社日立製作所 | 感光性樹脂組成物 |
US4678835A (en) | 1986-01-30 | 1987-07-07 | Ppg Industries, Inc. | Coating composition containing an ungelled reaction product as a curative |
US4693959A (en) | 1986-03-07 | 1987-09-15 | E.I. Du Pont De Nemours And Company | Adhesion promotion in photoresist lamination and processing |
US4676867A (en) | 1986-06-06 | 1987-06-30 | Rockwell International Corporation | Planarization process for double metal MOS using spin-on glass as a sacrificial layer |
EP0255303B1 (en) | 1986-07-25 | 1989-10-11 | Oki Electric Industry Company, Limited | Negative resist material, method for its manufacture and method for using it |
JPS63139303A (ja) | 1986-08-05 | 1988-06-11 | Fuji Photo Film Co Ltd | 赤外線吸収性組成物 |
US4806504A (en) | 1986-09-11 | 1989-02-21 | Fairchild Semiconductor Corporation | Planarization method |
US4950583A (en) | 1986-09-17 | 1990-08-21 | Brewer Science Inc. | Adhesion promoting product and process for treating an integrated circuit substrate therewith |
US4732858A (en) | 1986-09-17 | 1988-03-22 | Brewer Science, Inc. | Adhesion promoting product and process for treating an integrated circuit substrate |
US4731264A (en) | 1986-10-03 | 1988-03-15 | Ppg Industries, Inc. | Sol-gel compositions containing silane and alumina |
US4863827A (en) | 1986-10-20 | 1989-09-05 | American Hoechst Corporation | Postive working multi-level photoresist |
US6033283A (en) | 1986-10-21 | 2000-03-07 | Applied Elastomerics, Inc. | Humdinger, string spinning toy |
DE3635821A1 (de) | 1986-10-22 | 1988-04-28 | Bayer Ag | Mikrokapseln mit verbesserten waenden |
US4898907A (en) | 1986-12-03 | 1990-02-06 | Dow Corning Corporation | Compositions of platinum and rhodium catalyst in combination with hydrogen silsesquioxane resin |
US4756977A (en) | 1986-12-03 | 1988-07-12 | Dow Corning Corporation | Multilayer ceramics from hydrogen silsesquioxane |
US4822697A (en) | 1986-12-03 | 1989-04-18 | Dow Corning Corporation | Platinum and rhodium catalysis of low temperature formation multilayer ceramics |
US5008320A (en) | 1986-12-04 | 1991-04-16 | Dow Corning Corporation | Platinum or rhodium catalyzed multilayer ceramic coatings from hydrogen silsesquioxane resin and metal oxides |
US4753855A (en) | 1986-12-04 | 1988-06-28 | Dow Corning Corporation | Multilayer ceramic coatings from metal oxides for protection of electronic devices |
US4911992A (en) | 1986-12-04 | 1990-03-27 | Dow Corning Corporation | Platinum or rhodium catalyzed multilayer ceramic coatings from hydrogen silsesquioxane resin and metal oxides |
US4746693A (en) | 1986-12-12 | 1988-05-24 | Rca Corporation | Polyalkylsilsesquioxane coating composition |
JPH0819381B2 (ja) | 1987-01-06 | 1996-02-28 | 日本合成ゴム株式会社 | コーティング用組成物 |
US5328976A (en) | 1987-01-09 | 1994-07-12 | Allied-Signal Inc. | Carbon-containing black glass monoliths |
JPS63191868A (ja) | 1987-02-05 | 1988-08-09 | Showa Denko Kk | コ−テイング剤 |
US5077085A (en) | 1987-03-06 | 1991-12-31 | Schnur Joel M | High resolution metal patterning of ultra-thin films on solid substrates |
US5389496A (en) | 1987-03-06 | 1995-02-14 | Rohm And Haas Company | Processes and compositions for electroless metallization |
US5079600A (en) | 1987-03-06 | 1992-01-07 | Schnur Joel M | High resolution patterning on solid substrates |
DE3810247A1 (de) | 1987-03-26 | 1988-10-06 | Toshiba Kawasaki Kk | Lichtempfindliche beschichtungsmasse |
US4782009A (en) | 1987-04-03 | 1988-11-01 | General Electric Company | Method of coating and imaging photopatternable silicone polyamic acid |
US4855199A (en) | 1987-04-03 | 1989-08-08 | General Electric Company | Photopatterned product of silicone polyamic acid on a transparent substrate |
DE3719844A1 (de) | 1987-06-13 | 1988-12-29 | Basf Ag | Durch photopolymersisation vernetzbares gemisch |
US4839274A (en) | 1987-06-30 | 1989-06-13 | Eastman Kodak Company | Novel polymethine dyes and UV absorbers containing a triarylborylisocyano group and imaging compositions containing these dyes |
EP0301641A1 (en) | 1987-07-23 | 1989-02-01 | Koninklijke Philips Electronics N.V. | Master disc and method of manufacturing a matrix |
US4973510A (en) | 1987-09-02 | 1990-11-27 | Teijin Limited | Coated sheet material and process for producing same |
US4839427A (en) | 1987-09-03 | 1989-06-13 | Monsanto Company | Resin systems cured with blocked acid catalysts |
US5024923A (en) | 1987-09-09 | 1991-06-18 | Fuji Photo Film Co., Ltd. | Infrared absorbent compositions |
US4962996A (en) | 1987-09-11 | 1990-10-16 | Raychem Corporation | Protected fiber optic waveguide |
DE3735852A1 (de) | 1987-10-23 | 1989-05-03 | Hoechst Ag | Positiv arbeitendes lichtempfindliches gemisch, enthaltend einen farbstoff, und daraus hergestelltes positiv arbeitendes lichtempfindliches aufzeichnungsmaterial |
DE3789511T2 (de) | 1987-10-24 | 1994-08-18 | Ito Optical Ind Co Ltd | Lösungsaufbringungsverfahren zur reflexverhinderung auf optischen teilen und verfahren unter anwendung einer derartigen lösung. |
US4925772A (en) | 1987-11-26 | 1990-05-15 | Siemens Aktiengesellschaft | Anti-radiation covering for electronic components |
US5272026A (en) | 1987-12-18 | 1993-12-21 | Ucb S.A. | Negative image process utilizing photosensitive compositions containing aromatic fused polycyclic sulfonic acid and partial ester or phenolic resin with diazoquinone sulfonic acid or diazoquinone carboxylic acid, and associated imaged article |
GB8729510D0 (en) | 1987-12-18 | 1988-02-03 | Ucb Sa | Photosensitive compositions containing phenolic resins & diazoquinone compounds |
US4849296A (en) | 1987-12-28 | 1989-07-18 | Dow Corning Corporation | Multilayer ceramic coatings from metal oxides and hydrogen silsesquioxane resin ceramified in ammonia |
US4847162A (en) | 1987-12-28 | 1989-07-11 | Dow Corning Corporation | Multilayer ceramics coatings from the ceramification of hydrogen silsequioxane resin in the presence of ammonia |
JPH01185367A (ja) | 1988-01-18 | 1989-07-24 | Toshiba Silicone Co Ltd | 表面処理されたポリメチルシルセスキオキサン粉末の製造方法 |
US4926383A (en) | 1988-02-02 | 1990-05-15 | National Semiconductor Corporation | BiCMOS write-recovery circuit |
EP0327311B1 (en) | 1988-02-02 | 1994-09-14 | Hitachi Chemical Co., Ltd. | A coating fluid for forming an oxide coating |
US5271768A (en) | 1988-02-02 | 1993-12-21 | Hitachi Chemical Co., Ltd. | Coating for forming an oxide coating |
US6040251A (en) | 1988-03-14 | 2000-03-21 | Nextec Applications Inc. | Garments of barrier webs |
US5194364A (en) | 1988-03-16 | 1993-03-16 | Fujitsu Limited | Process for formation of resist patterns |
US5391463A (en) | 1988-04-14 | 1995-02-21 | The United States Of America As Represented By The Secretary Of The Navy | Surface modification to create regions resistant to adsorption of biomolecules |
US4942083A (en) | 1988-05-16 | 1990-07-17 | Smith Novis W Jr | Abrasion resistant coatings |
EP0345219B1 (de) | 1988-05-31 | 1994-02-02 | Ciba-Geigy Ag | Wässrige Dispersion von 2-(2'-Hydroxyphenyl-)benzotriazolen |
US4921778A (en) | 1988-07-29 | 1990-05-01 | Shipley Company Inc. | Photoresist pattern fabrication employing chemically amplified metalized material |
US4943511A (en) | 1988-08-05 | 1990-07-24 | Morton Thiokol, Inc. | High sensitivity mid and deep UV resist |
US5403680A (en) | 1988-08-30 | 1995-04-04 | Osaka Gas Company, Ltd. | Photolithographic and electron beam lithographic fabrication of micron and submicron three-dimensional arrays of electronically conductive polymers |
US5173368A (en) | 1988-09-14 | 1992-12-22 | Pilkington Visioncare Holdings, Inc. | Solution-applied antireflective coatings |
EP0436639B1 (en) | 1988-09-28 | 1998-01-14 | Brewer Science, Inc. | Multifunctional photolithographic compositions |
US4954414A (en) | 1988-11-08 | 1990-09-04 | The Mead Corporation | Photosensitive composition containing a transition metal coordination complex cation and a borate anion and photosensitive materials employing the same |
US5199979A (en) | 1988-11-25 | 1993-04-06 | Ppg Industries, Inc. | UV resistant, abrasion resistant coatings |
US4981530A (en) | 1988-11-28 | 1991-01-01 | International Business Machines Corporation | Planarizing ladder-type silsesquioxane polymer insulation layer |
US5455145A (en) | 1988-12-24 | 1995-10-03 | Mitsubishi Denki Kabushiki Kaisha | Method of manufacturing double layer resist pattern and double layer resist structure |
US6180317B1 (en) | 1988-12-30 | 2001-01-30 | International Business Machines Corporation | Composition for photoimaging |
US5026624A (en) | 1989-03-03 | 1991-06-25 | International Business Machines Corporation | Composition for photo imaging |
US5747223A (en) | 1988-12-30 | 1998-05-05 | International Business Machines Corporation | Composition for photoimaging |
US4940651A (en) | 1988-12-30 | 1990-07-10 | International Business Machines Corporation | Method for patterning cationic curable photoresist |
US5300402A (en) | 1988-12-30 | 1994-04-05 | International Business Machines Corporation | Composition for photo imaging |
US5439766A (en) | 1988-12-30 | 1995-08-08 | International Business Machines Corporation | Composition for photo imaging |
DE68908872T2 (de) | 1989-02-03 | 1994-02-10 | Mitsubishi Metal Corp | Verfahren zum Ziehen von Einkristallen. |
US6210862B1 (en) | 1989-03-03 | 2001-04-03 | International Business Machines Corporation | Composition for photoimaging |
US5278010A (en) | 1989-03-03 | 1994-01-11 | International Business Machines Corporation | Composition for photo imaging |
US4885262A (en) | 1989-03-08 | 1989-12-05 | Intel Corporation | Chemical modification of spin-on glass for improved performance in IC fabrication |
EP0388343B1 (en) | 1989-03-14 | 1996-07-17 | International Business Machines Corporation | Chemically amplified photoresist |
US5302455A (en) | 1989-05-16 | 1994-04-12 | J. M. Huber Corporation | Endothermic blowing agents compositions and applications |
US5106534A (en) | 1989-05-16 | 1992-04-21 | J. M. Huber Corporation | Endothermic blowing agents compositions and applications |
US5009809A (en) | 1989-05-16 | 1991-04-23 | J. M. Huber Corporation | High temperature endothermic blowing agents compositions and applications |
US5250224A (en) | 1989-05-16 | 1993-10-05 | J. M. Huber Corporation | Foamed products containing endothermic blowing agents and processes |
US5009810A (en) | 1989-05-16 | 1991-04-23 | J. M. Huber Corporation | Endothermic blowing agents compositions and applications |
US5252618A (en) | 1989-05-16 | 1993-10-12 | J. M. Huber Corporation | Endothermic blowing agents for strengthening weld lines in molded thermoplastic resins and products |
US5317044A (en) | 1989-05-16 | 1994-05-31 | J. M. Huber Corporation | Endothermic blowing agents for surface migration of components in foamed products, compositions and applications |
US5137655A (en) | 1989-05-16 | 1992-08-11 | J. M. Huber Corporation | High temperature endothermic blowing agents compositions and applications |
US5128232A (en) | 1989-05-22 | 1992-07-07 | Shiply Company Inc. | Photoresist composition with copolymer binder having a major proportion of phenolic units and a minor proportion of non-aromatic cyclic alcoholic units |
US5102695A (en) | 1989-07-07 | 1992-04-07 | Swedlow, Inc. | Highly tintable abrasion resistant coatings |
US5013608A (en) | 1989-07-07 | 1991-05-07 | Swedlow, Inc. | Highly tintable abrasion resistant coatings |
US4999397A (en) | 1989-07-28 | 1991-03-12 | Dow Corning Corporation | Metastable silane hydrolyzates and process for their preparation |
US5045592A (en) | 1989-07-28 | 1991-09-03 | Dow Corning Corporation | Metastable silane hydrolyzates |
US5112728A (en) | 1989-10-05 | 1992-05-12 | Konica Corporation | Silver halide photographic light-sensitive material |
US5059512A (en) | 1989-10-10 | 1991-10-22 | International Business Machines Corporation | Ultraviolet light sensitive photoinitiator compositions, use thereof and radiation sensitive compositions |
EP0423446B1 (en) | 1989-10-17 | 1998-03-04 | Shipley Company Inc. | Near UV photoresist |
US5212046A (en) | 1989-10-17 | 1993-05-18 | Shipley Company Inc. | Near UV photoresist |
CA2027031A1 (en) | 1989-10-18 | 1991-04-19 | Loren A. Haluska | Hermetic substrate coatings in an inert gas atmosphere |
US5252340A (en) | 1989-12-14 | 1993-10-12 | Isolyser Company, Inc. | Method of producing an absorbent composition |
JP2718231B2 (ja) | 1990-01-10 | 1998-02-25 | 三菱電機株式会社 | 高純度末端ヒドロキシフェニルラダーシロキサンプレポリマーの製造方法および高純度末端ヒドロキシフェニルラダーポリシロキサンの製造方法 |
US4973526A (en) | 1990-02-15 | 1990-11-27 | Dow Corning Corporation | Method of forming ceramic coatings and resulting articles |
JPH03257027A (ja) | 1990-03-05 | 1991-11-15 | Matsushita Electric Works Ltd | 光透過性多孔体の製造方法 |
US5043789A (en) | 1990-03-15 | 1991-08-27 | International Business Machines Corporation | Planarizing silsesquioxane copolymer coating |
EP0449263B1 (en) | 1990-03-28 | 1996-06-12 | Japan Synthetic Rubber Co., Ltd. | Polysiloxane-composite polymer particles |
US5104692A (en) | 1990-04-20 | 1992-04-14 | Pilkington Visioncare Holdings, Inc. | Two-layer antireflective coating applied in solution |
US5055372A (en) | 1990-04-23 | 1991-10-08 | The Mead Corporation | Photohardenable composition containing borate salts and ketone initiators |
US5868597A (en) | 1990-05-21 | 1999-02-09 | Applied Elastomerics, Inc. | Ultra-soft, ultra-elastic gel airfoils |
US5760117A (en) | 1990-05-21 | 1998-06-02 | Applied Elastomerics, Inc. | Gelatinous composition and articles |
US6117176A (en) | 1993-11-15 | 2000-09-12 | Applied Elastomerics, Inc. | Elastic-crystal gel |
US5884639A (en) | 1996-03-08 | 1999-03-23 | Applied Elastomerics, Inc. | Crystal gels with improved properties |
US6050871A (en) | 1994-04-19 | 2000-04-18 | Applied Elastomerics, Inc. | Crystal gel airfoils with improved tear resistance and gel airfoils with profiles capable of exhibiting time delay recovery from deformation |
US6333374B1 (en) | 1990-05-21 | 2001-12-25 | Applied Elastomerics, Inc. | Fluffy, strong, solid elastic gels, articles and method of making same |
US5962572A (en) | 1994-04-19 | 1999-10-05 | Applied Elastomerics, Inc. | Oriented gel and oriented gel articles |
US6148830A (en) | 1994-04-19 | 2000-11-21 | Applied Elastomerics, Inc. | Tear resistant, multiblock copolymer gels and articles |
US6552109B1 (en) | 1994-04-19 | 2003-04-22 | Applied Elastomerics, Inc. | Gelatinous elastomer compositions and articles |
US5938499A (en) | 1993-11-15 | 1999-08-17 | Applied Elastomerics, Inc. | Elastic gel toy |
EP0458651B1 (en) | 1990-05-25 | 1994-03-09 | Matsushita Electric Industrial Co., Ltd. | Photosensitive materials comprising organic photoconductive substances in a binder polymer having aromatic rings, OH groups and bromine joined at the aromatic ring or rings |
US5262201A (en) | 1990-06-04 | 1993-11-16 | Dow Corning Corporation | Low temperature process for converting silica precursor coatings to ceramic silica coatings by exposure to ammonium hydroxide or an environment to which water vapor and ammonia vapor have been added |
US5116637A (en) | 1990-06-04 | 1992-05-26 | Dow Corning Corporation | Amine catalysts for the low temperature conversion of silica precursors to silica |
US5059448A (en) | 1990-06-18 | 1991-10-22 | Dow Corning Corporation | Rapid thermal process for obtaining silica coatings |
US5126289A (en) | 1990-07-20 | 1992-06-30 | At&T Bell Laboratories | Semiconductor lithography methods using an arc of organic material |
US5100503A (en) | 1990-09-14 | 1992-03-31 | Ncr Corporation | Silica-based anti-reflective planarizing layer |
US5472488A (en) | 1990-09-14 | 1995-12-05 | Hyundai Electronics America | Coating solution for forming glassy layers |
US5527872A (en) | 1990-09-14 | 1996-06-18 | At&T Global Information Solutions Company | Electronic device with a spin-on glass dielectric layer |
US5302198A (en) | 1990-09-14 | 1994-04-12 | Ncr Corporation | Coating solution for forming glassy layers |
US5152834A (en) | 1990-09-14 | 1992-10-06 | Ncr Corporation | Spin-on glass composition |
US5340644A (en) | 1990-10-05 | 1994-08-23 | Hercules Incorporated | Organosilicon compositions |
US5140396A (en) | 1990-10-10 | 1992-08-18 | Polaroid Corporation | Filter and solid state imager incorporating this filter |
US5059500A (en) | 1990-10-10 | 1991-10-22 | Polaroid Corporation | Process for forming a color filter |
DE69130280T2 (de) | 1990-10-16 | 1999-04-08 | Mitsui Chemicals Inc | Verwendung eines hochlichtdurchlässigen staubschützenden Films, Verfahren zu dessen Herstellung und staubschützendes Element |
US5055376A (en) | 1990-11-13 | 1991-10-08 | Eastman Kodak Company | Curable compositions containing onium salt photoinitiators which have a chromophore linked to the onium salt moiety through the 3-position and method of use |
JP2991786B2 (ja) | 1990-11-22 | 1999-12-20 | 三菱電機株式会社 | シリコーン樹脂組成物 |
US5063267A (en) | 1990-11-28 | 1991-11-05 | Dow Corning Corporation | Hydrogen silsesquioxane resin fractions and their use as coating materials |
DE59106479D1 (de) | 1990-12-13 | 1995-10-19 | Ciba Geigy Ag | Wässrige Dispersion schwerlöslicher UV-Absorber. |
US5662109A (en) | 1990-12-14 | 1997-09-02 | Hutson; William H. | Method and system for multi-dimensional imaging and analysis for early detection of diseased tissue |
US5256510A (en) | 1990-12-21 | 1993-10-26 | Eastman Kodak Company | Photoelectrographic imaging with near-infrared sensitizing dyes |
US5219788A (en) | 1991-02-25 | 1993-06-15 | Ibm Corporation | Bilayer metallization cap for photolithography |
US5520855A (en) | 1991-03-20 | 1996-05-28 | Kabushiki Kaisha Toshiba | Coating solution composition for forming glass gel thin film, color glass gel filter, and display device using the same |
JPH05202483A (ja) | 1991-04-25 | 1993-08-10 | Shipley Co Inc | 無電解金属化方法と組成物 |
US5648201A (en) | 1991-04-25 | 1997-07-15 | The United Sates Of America As Represented By The Secretary Of The Navy | Efficient chemistry for selective modification and metallization of substrates |
US5165955A (en) | 1991-05-28 | 1992-11-24 | Dow Corning Corporation | Method of depositing a coating containing silicon and oxygen |
US5166093A (en) | 1991-07-31 | 1992-11-24 | Micron Technology, Inc. | Method to reduce the reflectivity of a semi-conductor metallic surface |
JPH0570738A (ja) | 1991-09-11 | 1993-03-23 | Kawaken Fine Chem Co Ltd | コーテイング組成物 |
US5418136A (en) | 1991-10-01 | 1995-05-23 | Biostar, Inc. | Devices for detection of an analyte based upon light interference |
DE4132697A1 (de) | 1991-10-01 | 1993-04-08 | Wacker Chemie Gmbh | Verfahren zur herstellung von organopolysiloxanharz |
US5212218A (en) | 1991-10-15 | 1993-05-18 | A. B. Chance Company | Hydrophobic, erodiable synthetic resin composition for electrical insulators |
US5227334A (en) | 1991-10-31 | 1993-07-13 | Micron Technology, Inc. | LPCVD process for depositing titanium nitride (tin) films and silicon substrates produced thereby |
US5463492A (en) | 1991-11-01 | 1995-10-31 | Research Frontiers Incorporated | Light modulating film of improved clarity for a light valve |
US6472128B2 (en) | 1996-04-30 | 2002-10-29 | Shipley Company, L.L.C. | Antihalation compositions |
US6773864B1 (en) | 1991-11-15 | 2004-08-10 | Shipley Company, L.L.C. | Antihalation compositions |
US6528235B2 (en) | 1991-11-15 | 2003-03-04 | Shipley Company, L.L.C. | Antihalation compositions |
US6165697A (en) | 1991-11-15 | 2000-12-26 | Shipley Company, L.L.C. | Antihalation compositions |
EP0580857B1 (en) | 1992-02-05 | 1998-05-20 | Toray Industries, Inc. | Multilayer coated article and use therein of a primer coating |
JP2694097B2 (ja) | 1992-03-03 | 1997-12-24 | インターナショナル・ビジネス・マシーンズ・コーポレイション | 反射防止コーティング組成物 |
US5457081A (en) | 1992-05-15 | 1995-10-10 | Dai Nippon Printing Co., Ltd. | Thermal transfer image receiving sheet |
JP2753921B2 (ja) | 1992-06-04 | 1998-05-20 | 富士写真フイルム株式会社 | ポジ型フオトレジスト組成物 |
US5576247A (en) | 1992-07-31 | 1996-11-19 | Matsushita Electric Industrial Co., Ltd. | Thin layer forming method wherein hydrophobic molecular layers preventing a BPSG layer from absorbing moisture |
US6420475B1 (en) | 1994-04-19 | 2002-07-16 | Applied Elastomerics, Inc. | Tear resistant elastic crystal gels gel composites and their uses |
US6909220B2 (en) | 1994-04-19 | 2005-06-21 | Applied Elastomerics, Inc. | High strain tear resistant gels and gel composites for use as artificial muscle actuators |
US6324703B1 (en) | 1994-04-19 | 2001-12-04 | Applied Elastomerics, Inc. | Strong, soft, tear resistant insulating compositions and composites for extreme cold weather use |
US6627275B1 (en) | 1994-04-19 | 2003-09-30 | Applied Elastomerics, Incorporated | Tear resistant elastic crystal gels suitable for inflatable restraint cushions and other uses |
US6867253B1 (en) | 1994-04-19 | 2005-03-15 | Applied Elastomerics, Inc. | Tear resistant, crystalline midblock copolymer gels and articles |
US6794440B2 (en) | 1994-04-19 | 2004-09-21 | Applied Elastomerics, Inc. | Tear resistant gelatinous elastomer compositions and articles for use as fishing bait |
JPH06333803A (ja) | 1992-09-18 | 1994-12-02 | Sharp Corp | 投影型露光装置用フィルター |
GB2277095B (en) | 1992-09-24 | 1997-04-16 | Kansai Paint Co Ltd | Topcoating composition and film-forming process by use of the same |
US5873931A (en) | 1992-10-06 | 1999-02-23 | Minnesota Mining And Manufacturing Company | Coating composition having anti-reflective and anti-fogging properties |
US5432007A (en) | 1992-10-06 | 1995-07-11 | Shizu Naito | Solvent-free organosiloxane composition and its use |
JPH06140396A (ja) | 1992-10-23 | 1994-05-20 | Yamaha Corp | 半導体装置とその製法 |
US5384357A (en) | 1992-11-02 | 1995-01-24 | General Electric Company | Infrared radiation curable organopolysiloxane compositions |
US5719249A (en) | 1993-11-29 | 1998-02-17 | Kanegafuchi Kagaku Kogyo Kabushiki Kaisha | Reactive silicon group-containing polyoxyalkylene-polysiloxane copolymer |
US5395734A (en) | 1992-11-30 | 1995-03-07 | Minnesota Mining And Manufacturing Company | Shoot and run printing materials |
DE4241727A1 (de) | 1992-12-10 | 1994-06-16 | Wacker Chemie Gmbh | In Wasser selbstdispergierende, Organopolysiloxan anhaltende Zusammensetzungen |
US5449712A (en) | 1993-01-13 | 1995-09-12 | Thoro System Products, Inc. | Organosilicon emulsions for rendering porous substrates water repellent |
US5414069A (en) | 1993-02-01 | 1995-05-09 | Polaroid Corporation | Electroluminescent polymers, processes for their use, and electroluminescent devices containing these polymers |
US5302849A (en) | 1993-03-01 | 1994-04-12 | Motorola, Inc. | Plastic and grid array semiconductor device and method for making the same |
US5387480A (en) | 1993-03-08 | 1995-02-07 | Dow Corning Corporation | High dielectric constant coatings |
US5512418A (en) | 1993-03-10 | 1996-04-30 | E. I. Du Pont De Nemours And Company | Infra-red sensitive aqueous wash-off photoimaging element |
US6336859B2 (en) | 1993-03-31 | 2002-01-08 | Progressive Games, Inc. | Method for progressive jackpot gaming |
US5328975A (en) | 1993-04-02 | 1994-07-12 | Ppg Industries, Inc. | Ultraviolet radiation absorbing coating |
FR2704766B1 (fr) | 1993-05-06 | 1995-07-28 | Salomon Sa | Dispositif interface entre un ski et des éléments de fixation. |
US5498748A (en) | 1993-07-20 | 1996-03-12 | Wako Pure Chemical Industries, Ltd. | Anthracene derivatives |
US5576359A (en) | 1993-07-20 | 1996-11-19 | Wako Pure Chemical Industries, Ltd. | Deep ultraviolet absorbent composition |
DE4331162A1 (de) | 1993-09-14 | 1995-03-16 | Bayer Ag | Verfahren zur Herstellung von Cyaninfarbstoffen |
US5320868A (en) | 1993-09-13 | 1994-06-14 | Dow Corning Corporation | Method of forming SI-O containing coatings |
US5441765A (en) | 1993-09-22 | 1995-08-15 | Dow Corning Corporation | Method of forming Si-O containing coatings |
US5467626A (en) | 1993-10-01 | 1995-11-21 | The Boeing Company | Integral forming die system for superplastic metal forming |
US5382615A (en) | 1993-10-01 | 1995-01-17 | Eastman Chemical Company | Modified polyethylene based hot-melt adhesives for use in packaging |
US6776094B1 (en) | 1993-10-04 | 2004-08-17 | President & Fellows Of Harvard College | Kit For Microcontact Printing |
DE4338360A1 (de) | 1993-11-10 | 1995-05-11 | Inst Neue Mat Gemein Gmbh | Verfahren zur Herstellung von funktionellen glasartigen Schichten |
EP0701121A4 (en) | 1994-03-11 | 1997-09-03 | Kawasaki Steel Co | ASSESSMENT PROCESS FOR PRODUCING INSULATION COATING USED Siloxanes COATING LIQUID USED FOR THE PRODUCTION OF INSULATION COATING, PROCESS FOR PRODUCING THE LIQUID, METHOD FOR PRODUCING THE ISOLATION COATING FOR SEMICONDUCTOR ELEMENTS AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICES BY THE APPLICATION OF THE ABOVE PROCEDURES |
DE69511141T2 (de) | 1994-03-28 | 2000-04-20 | Wako Pure Chem Ind Ltd | Resistzusammensetzung für tiefe Ultraviolettbelichtung |
US6161555A (en) | 1994-04-19 | 2000-12-19 | Applied Elastomerics, Inc. | Crystal gels useful as dental floss with improved high tear, high tensile, and resistance to high stress rupture properties |
US5759625A (en) | 1994-06-03 | 1998-06-02 | E. I. Du Pont De Nemours And Company | Fluoropolymer protectant layer for high temperature superconductor film and photo-definition thereof |
US5494858A (en) | 1994-06-07 | 1996-02-27 | Texas Instruments Incorporated | Method for forming porous composites as a low dielectric constant layer with varying porosity distribution electronics applications |
US5468591A (en) | 1994-06-14 | 1995-11-21 | Eastman Kodak Company | Barrier layer for laser ablative imaging |
FR2721720B1 (fr) | 1994-06-27 | 1996-09-06 | Essilor Int | Lentille ophtalmique en verre organique à intercouche anti-chocs et son procédé de fabrication. |
US20020034630A1 (en) | 1994-06-27 | 2002-03-21 | Jean-Paul Cano | Ophthalmic lens made of organic glass with a shockproof intermediate layer, and method for making same |
US5910021A (en) | 1994-07-04 | 1999-06-08 | Yamaha Corporation | Manufacture of semiconductor device with fine pattens |
US5858547A (en) | 1994-07-06 | 1999-01-12 | Alliedsignal, Inc. | Novolac polymer planarization films for microelectronic structures |
US5729563A (en) | 1994-07-07 | 1998-03-17 | Hewlett-Packard Company | Method and apparatus for optically and thermally isolating surface emitting laser diodes |
US5976666A (en) | 1994-08-29 | 1999-11-02 | Sri International | Electromagnetic radiation absorbing devices and associated methods of manufacture and use |
US5498468A (en) | 1994-09-23 | 1996-03-12 | Kimberly-Clark Corporation | Fabrics composed of ribbon-like fibrous material and method to make the same |
US5527562A (en) | 1994-10-21 | 1996-06-18 | Aluminum Company Of America | Siloxane coatings for aluminum reflectors |
US5449639A (en) | 1994-10-24 | 1995-09-12 | Taiwan Semiconductor Manufacturing Company Ltd. | Disposable metal anti-reflection coating process used together with metal dry/wet etch |
KR0129950B1 (ko) | 1994-11-30 | 1998-04-03 | 김광호 | 반사방지막 조성물 |
FR2729307B1 (fr) | 1995-01-18 | 1997-04-18 | Seppic Sa | Utilisation d'esters d'acides gras ethoxyles comme composants auto-emulsionnables notamment utiles pour la preparation de produits de traitement phytosanitaires ou de medicaments a usage veterinaire ou humain |
US5679128A (en) | 1995-01-31 | 1997-10-21 | Latting; John Alvis | Dry-bonded nonionic adjuvants |
US5964917A (en) | 1995-01-31 | 1999-10-12 | Latting; John Alvis | Free-flowing fertilizer compositions |
JP3542185B2 (ja) | 1995-02-02 | 2004-07-14 | ダウ コーニング アジア株式会社 | シリコーンレジン、これを含む組成物およびその硬化方法 |
EP0727711A3 (en) | 1995-02-17 | 1997-04-09 | Ocg Microelectronic Materials | Photoresist compositions containing supercritical fluid fractionated polymeric resin binders |
JP3436435B2 (ja) | 1995-02-22 | 2003-08-11 | 東レ・ダウコーニング・シリコーン株式会社 | 紫外線硬化型シリコーン組成物の硬化方法 |
US5580819A (en) | 1995-03-22 | 1996-12-03 | Ppg Industries, Inc. | Coating composition, process for producing antireflective coatings, and coated articles |
GB9508031D0 (en) | 1995-04-20 | 1995-06-07 | Minnesota Mining & Mfg | UV-absorbing media bleachable by IR-radiation |
US5945249A (en) | 1995-04-20 | 1999-08-31 | Imation Corp. | Laser absorbable photobleachable compositions |
GB9617416D0 (en) | 1996-08-20 | 1996-10-02 | Minnesota Mining & Mfg | Thermal bleaching of infrared dyes |
US5935758A (en) | 1995-04-20 | 1999-08-10 | Imation Corp. | Laser induced film transfer system |
US5747553A (en) | 1995-04-26 | 1998-05-05 | Reinforced Polymer Inc. | Low pressure acrylic molding composition with fiber reinforcement |
US6103779A (en) | 1995-04-26 | 2000-08-15 | Reinforced Polmers, Inc. | Method of preparing molding compositions with fiber reinforcement and products obtained therefrom |
US6607991B1 (en) | 1995-05-08 | 2003-08-19 | Electron Vision Corporation | Method for curing spin-on dielectric films utilizing electron beam radiation |
US5635240A (en) | 1995-06-19 | 1997-06-03 | Dow Corning Corporation | Electronic coating materials using mixed polymers |
US6150250A (en) | 1995-07-05 | 2000-11-21 | Yamaha Corporation | Conductive layer forming method using etching mask with direction <200> |
JP3512911B2 (ja) | 1995-07-11 | 2004-03-31 | 富士写真フイルム株式会社 | 紫外線吸収剤前駆体化合物、それを含有する感光性樹脂組成物及び画像形成方法 |
JP3824334B2 (ja) | 1995-08-07 | 2006-09-20 | 東京応化工業株式会社 | シリカ系被膜形成用塗布液及び被膜形成方法 |
US5693691A (en) | 1995-08-21 | 1997-12-02 | Brewer Science, Inc. | Thermosetting anti-reflective coatings compositions |
US5948318A (en) | 1995-09-11 | 1999-09-07 | Chisso Corporation | Liquid crystal composition and liquid crystal display device |
AU6973296A (en) | 1995-09-12 | 1997-04-01 | Gelest, Inc. | Beta-substituted organosilsesquioxanes and use thereof |
US6770726B1 (en) | 1995-09-12 | 2004-08-03 | Gelest, Inc. | β-substituted organosilsesquioxane polymers |
US5583195A (en) | 1995-09-29 | 1996-12-10 | General Electric Company | Photocurable epoxy silicones functionalized with fluorescent or photosensitizing marker dyes |
US5580606A (en) | 1995-10-06 | 1996-12-03 | Singapore Institute Of Standards Etc. | Method for forming interference anti-reflective coatings by plasma surface modification |
US5693701A (en) | 1995-10-26 | 1997-12-02 | Dow Corning Corporation | Tamper-proof electronic coatings |
JPH09120157A (ja) | 1995-10-25 | 1997-05-06 | Fuji Photo Film Co Ltd | 湿し水不要感光性平版印刷版 |
US5663286A (en) | 1995-11-09 | 1997-09-02 | H.B. Fuller Licensing And Financing, Inc. | Nonwoven web comprising water soluble polyamides and articles constructed therefrom |
US5672243A (en) | 1995-11-28 | 1997-09-30 | Mosel Vitelic, Inc. | Antireflection coating for highly reflective photolithographic layers comprising chromium oxide or chromium suboxide |
TW376408B (en) | 1995-12-01 | 1999-12-11 | Nissan Chemical Ind Ltd | Coating film having water repellency and low refractive index |
EP0778300B1 (en) | 1995-12-05 | 2001-01-31 | Shin-Etsu Chemical Co., Ltd. | Method for preparing crosslinked polycarbodiimides |
US5837568A (en) | 1995-12-12 | 1998-11-17 | Sanyo Electric Co., Ltd. | Manufacturing method of semiconductor devices |
JP3930591B2 (ja) | 1995-12-22 | 2007-06-13 | 東陶機器株式会社 | 光触媒性親水性コーティング組成物、親水性被膜の形成方法および被覆物品 |
US5629437A (en) | 1996-01-30 | 1997-05-13 | Huls America Inc. | Preparation and use of alkyleneoxysilane compositions |
WO1997030362A1 (en) | 1996-02-13 | 1997-08-21 | Sola International, Inc. | Color-neutral uv blocking coating for plastic lens |
US5756257A (en) | 1996-02-14 | 1998-05-26 | Imation Corp. | Color proofing article incorporating novel antihalation dye |
JP3436843B2 (ja) | 1996-04-25 | 2003-08-18 | 東京応化工業株式会社 | リソグラフィー用下地材及びそれを用いたリソグラフィー用レジスト材料 |
US5994431A (en) | 1996-05-03 | 1999-11-30 | 3M Innovative Properties Company | Amide functional ultraviolet light absorbers for polyolefins |
US6291586B2 (en) | 1996-05-03 | 2001-09-18 | 3M Innovative Properties Company | Amide functional ultraviolet light absorbers for polyurethanes and polyureas |
JPH09306954A (ja) | 1996-05-20 | 1997-11-28 | Hitachi Ltd | 半導体装置及びその実装方法並びに実装構造体 |
TW354392B (en) | 1996-07-03 | 1999-03-11 | Du Pont | Photomask blanks |
TW515926B (en) | 1996-07-10 | 2003-01-01 | Matsushita Electric Ind Co Ltd | Liquid crystal alignment film and method for producing the same, and liquid crystal display apparatus using the same and method for producing the same |
JP3222386B2 (ja) | 1996-07-12 | 2001-10-29 | 信越化学工業株式会社 | コーティング剤組成物及びそのコーティング組成物で処理してなる物品 |
US6040053A (en) | 1996-07-19 | 2000-03-21 | Minnesota Mining And Manufacturing Company | Coating composition having anti-reflective and anti-fogging properties |
JPH1060280A (ja) | 1996-08-14 | 1998-03-03 | Japan Synthetic Rubber Co Ltd | 水系分散体 |
US6072018A (en) | 1996-09-30 | 2000-06-06 | Virginia Tech Intellectual Properties, Inc. | High abrasion resistant coating material |
EP0917550A4 (en) | 1996-10-25 | 1999-12-29 | Blue River International L L C | COMPOSITIONS FOR SILICON COATINGS AND USES THEREOF |
US5767014A (en) | 1996-10-28 | 1998-06-16 | International Business Machines Corporation | Integrated circuit and process for its manufacture |
US6020410A (en) | 1996-10-29 | 2000-02-01 | Alliedsignal Inc. | Stable solution of a silsesquioxane or siloxane resin and a silicone solvent |
US5922299A (en) | 1996-11-26 | 1999-07-13 | Battelle Memorial Institute | Mesoporous-silica films, fibers, and powders by evaporation |
US5695551A (en) | 1996-12-09 | 1997-12-09 | Dow Corning Corporation | Water repellent composition |
WO1998026019A1 (fr) | 1996-12-13 | 1998-06-18 | Matsushita Electric Works, Ltd. | Composition d'emulsion de silicium et procede d'elaboration |
DE69707635T2 (de) | 1996-12-24 | 2002-08-08 | Fuji Photo Film Co Ltd | Zusammensetzung für Antireflexunterschichten und Verfahren zur Herstellung eines Resistmusters damit |
US5939236A (en) | 1997-02-07 | 1999-08-17 | Shipley Company, L.L.C. | Antireflective coating compositions comprising photoacid generators |
US6174631B1 (en) | 1997-02-10 | 2001-01-16 | E. I. Du Pont De Nemours And Company | Attenuating phase shift photomasks |
US6491840B1 (en) | 2000-02-14 | 2002-12-10 | The Procter & Gamble Company | Polymer compositions having specified PH for improved dispensing and improved stability of wrinkle reducing compositions and methods of use |
DE19707660A1 (de) | 1997-02-26 | 1998-09-03 | Heidelberger Druckmasch Ag | Lichtvorhang |
DE19710461A1 (de) | 1997-03-13 | 1998-09-17 | Wacker Chemie Gmbh | Farbstoffreste aufweisende Organopolysiloxane |
JP3415741B2 (ja) | 1997-03-31 | 2003-06-09 | 東レ・ダウコーニング・シリコーン株式会社 | 電気絶縁性薄膜形成用組成物および電気絶縁性薄膜の形成方法 |
US5776559A (en) | 1997-04-11 | 1998-07-07 | Woolford; Esther | Electric Christmas tree |
US6143855A (en) | 1997-04-21 | 2000-11-07 | Alliedsignal Inc. | Organohydridosiloxane resins with high organic content |
US6743856B1 (en) | 1997-04-21 | 2004-06-01 | Honeywell International Inc. | Synthesis of siloxane resins |
US6043330A (en) | 1997-04-21 | 2000-03-28 | Alliedsignal Inc. | Synthesis of siloxane resins |
US6218497B1 (en) | 1997-04-21 | 2001-04-17 | Alliedsignal Inc. | Organohydridosiloxane resins with low organic content |
US6048804A (en) | 1997-04-29 | 2000-04-11 | Alliedsignal Inc. | Process for producing nanoporous silica thin films |
WO1998051752A1 (fr) | 1997-05-13 | 1998-11-19 | Kirin Beer Kabushiki Kaisha | Materiau de revetement permettant d'obtenir un film de revetement vitreux, procede de formation d'un revetement a l'aide de celui-ci, et dispositif d'application de revetement |
TW473653B (en) | 1997-05-27 | 2002-01-21 | Clariant Japan Kk | Composition for anti-reflective film or photo absorption film and compound used therein |
EP0881678A3 (en) | 1997-05-28 | 2000-12-13 | Texas Instruments Incorporated | Improvements in or relating to porous dielectric structures |
US5883011A (en) | 1997-06-18 | 1999-03-16 | Vlsi Technology, Inc. | Method of removing an inorganic antireflective coating from a semiconductor substrate |
US20010024685A1 (en) | 1997-06-19 | 2001-09-27 | Boulton Jonathan M. | Method for forming a protective coating and substrates coated with the same |
JP4012600B2 (ja) | 1997-06-23 | 2007-11-21 | 富士通株式会社 | 酸感応性重合体、レジスト組成物、レジストパターン形成方法、および半導体装置の製造方法 |
US6448331B1 (en) | 1997-07-15 | 2002-09-10 | Asahi Kasei Kabushiki Kaisha | Alkoxysilane/organic polymer composition for thin insulating film production and use thereof |
JP3473887B2 (ja) | 1997-07-16 | 2003-12-08 | 東京応化工業株式会社 | 反射防止膜形成用組成物及びそれを用いたレジストパターンの形成方法 |
US5962067A (en) | 1997-09-09 | 1999-10-05 | Lucent Technologies Inc. | Method for coating an article with a ladder siloxane polymer and coated article |
JP4053631B2 (ja) | 1997-10-08 | 2008-02-27 | Azエレクトロニックマテリアルズ株式会社 | 反射防止膜又は光吸収膜用組成物及びこれに用いる重合体 |
EP0911875A3 (en) | 1997-10-23 | 2000-08-02 | Texas Instruments Incorporated | Integrated circuit dielectric and method of fabrication thereof |
US6126733A (en) | 1997-10-31 | 2000-10-03 | Alliedsignal Inc. | Alcohol based precursors for producing nanoporous silica thin films |
US6090448A (en) | 1997-10-31 | 2000-07-18 | Alliedsignal Inc. | Polyol-based precursors for producing nanoporous silica thin films |
US5953627A (en) | 1997-11-06 | 1999-09-14 | International Business Machines Corporation | Process for manufacture of integrated circuit device |
US6177360B1 (en) | 1997-11-06 | 2001-01-23 | International Business Machines Corporation | Process for manufacture of integrated circuit device |
US6025232A (en) | 1997-11-12 | 2000-02-15 | Micron Technology, Inc. | Methods of forming field effect transistors and related field effect transistor constructions |
US6057239A (en) | 1997-12-17 | 2000-05-02 | Advanced Micro Devices, Inc. | Dual damascene process using sacrificial spin-on materials |
US6255671B1 (en) | 1998-01-05 | 2001-07-03 | International Business Machines Corporation | Metal embedded passivation layer structure for microelectronic interconnect formation, customization and repair |
US6190839B1 (en) | 1998-01-15 | 2001-02-20 | Shipley Company, L.L.C. | High conformality antireflective coating compositions |
US6042994A (en) | 1998-01-20 | 2000-03-28 | Alliedsignal Inc. | Nanoporous silica dielectric films modified by electron beam exposure and having low dielectric constant and low water content |
ATE210951T1 (de) | 1998-01-22 | 2002-01-15 | Kettenbach Gmbh & Co Kg | Unterfütterung für prothesen und verfahren zur herstellung |
US6190955B1 (en) | 1998-01-27 | 2001-02-20 | International Business Machines Corporation | Fabrication of trench capacitors using disposable hard mask |
JP4387588B2 (ja) | 1998-02-04 | 2009-12-16 | メルク エンド カムパニー インコーポレーテッド | 高スループットスクリーニングアッセイ用仮想ウェル |
US6337089B1 (en) | 1998-02-06 | 2002-01-08 | Seiwa Kasei Company, Limited | Microcapsule containing core material and method for producing the same |
US7022821B1 (en) | 1998-02-20 | 2006-04-04 | O'brien Timothy J | Antibody kit for the detection of TADG-15 protein |
US5972616A (en) | 1998-02-20 | 1999-10-26 | The Board Of Trustees Of The University Of Arkansas | TADG-15: an extracellular serine protease overexpressed in breast and ovarian carcinomas |
US7361444B1 (en) | 1998-02-23 | 2008-04-22 | International Business Machines Corporation | Multilayered resist systems using tuned polymer films as underlayers and methods of fabrication thereof |
US6503586B1 (en) | 1998-02-25 | 2003-01-07 | Arteva North America S.A.R.L. | Title improved infrared absorbing polyester packaging polymer |
US6147407A (en) | 1998-03-27 | 2000-11-14 | Lucent Technologies Inc. | Article comprising fluorinated amorphous carbon and process for fabricating article |
US6149778A (en) | 1998-03-12 | 2000-11-21 | Lucent Technologies Inc. | Article comprising fluorinated amorphous carbon and method for fabricating article |
US6177199B1 (en) | 1999-01-07 | 2001-01-23 | Alliedsignal Inc. | Dielectric films from organohydridosiloxane resins with low organic content |
US6962727B2 (en) | 1998-03-20 | 2005-11-08 | Honeywell International Inc. | Organosiloxanes |
US6218020B1 (en) | 1999-01-07 | 2001-04-17 | Alliedsignal Inc. | Dielectric films from organohydridosiloxane resins with high organic content |
US5985444A (en) | 1998-04-03 | 1999-11-16 | 3M Innovative Properties Company | Amide functional ultraviolet light absorbers for fluoropolymers |
US6344284B1 (en) | 1998-04-10 | 2002-02-05 | Organic Display Technology | Organic electroluminescent materials and devices made from such materials |
US5986344A (en) | 1998-04-14 | 1999-11-16 | Advanced Micro Devices, Inc. | Anti-reflective coating layer for semiconductor device |
DE19817069A1 (de) | 1998-04-17 | 1999-10-21 | Clariant Gmbh | Infrarotstrahlung reflektierende Farbmittel |
US6576408B2 (en) | 1998-04-29 | 2003-06-10 | Brewer Science, Inc. | Thermosetting anti-reflective coatings comprising aryl urethanes of hydroxypropyl cellulose |
CN1300383A (zh) | 1998-04-29 | 2001-06-20 | 部鲁尔科学公司 | 得自纤维素粘合剂的快速蚀刻、热固性抗反射涂料 |
TWI234787B (en) | 1998-05-26 | 2005-06-21 | Tokyo Ohka Kogyo Co Ltd | Silica-based coating film on substrate and coating solution therefor |
US6461970B1 (en) | 1998-06-10 | 2002-10-08 | Micron Technology, Inc. | Method of reducing defects in anti-reflective coatings and semiconductor structures fabricated thereby |
US6022812A (en) | 1998-07-07 | 2000-02-08 | Alliedsignal Inc. | Vapor deposition routes to nanoporous silica |
WO2000003303A1 (fr) | 1998-07-10 | 2000-01-20 | Clariant International Ltd. | Composition pour film empechant la reflexion de fond et nouveau colorant polymere utilise dans celle-ci |
US6444584B1 (en) | 1998-07-16 | 2002-09-03 | Taiwan Semiconductor Manufacturing Company | Plasma etch method for forming composite silicon/dielectric/silicon stack layer |
US6103456A (en) | 1998-07-22 | 2000-08-15 | Siemens Aktiengesellschaft | Prevention of photoresist poisoning from dielectric antireflective coating in semiconductor fabrication |
DE19834745A1 (de) | 1998-08-01 | 2000-02-03 | Agfa Gevaert Ag | Strahlungsempfindliches Gemisch mit IR-absorbierenden, anionischen Cyaninfarbstoffen und damit hergestelltes Aufzeichnungsmaterial |
US6335296B1 (en) | 1998-08-06 | 2002-01-01 | Alliedsignal Inc. | Deposition of nanoporous silica films using a closed cup coater |
US6217890B1 (en) | 1998-08-25 | 2001-04-17 | Susan Carol Paul | Absorbent article which maintains or improves skin health |
US6497893B1 (en) | 1999-06-30 | 2002-12-24 | Kimberly-Clark Worldwide, Inc. | Silk protein treatment composition and treated substrate for transfer to skin |
US6287286B1 (en) | 1998-08-25 | 2001-09-11 | Kimberly-Clark Worldwide, Inc. | Absorbent article having a reduced viability of candida albicans |
US6448464B1 (en) | 1999-07-30 | 2002-09-10 | Kimberly-Clark Worldwide, Inc. | Absorbent article which maintains skin temperature when wet |
US6238379B1 (en) | 1998-08-25 | 2001-05-29 | Kimberly-Clark Worldwide, Inc. | Absorbent article with increased wet breathability |
US6149934A (en) | 1999-04-23 | 2000-11-21 | Kimberly-Clark Worldwide, Inc. | Absorbent article having a lotionized bodyside liner |
US6152906A (en) | 1998-08-25 | 2000-11-28 | Kimberly-Clark Worldwide, Inc. | Absorbent article having improved breathability |
US6037275A (en) | 1998-08-27 | 2000-03-14 | Alliedsignal Inc. | Nanoporous silica via combined stream deposition |
US20010006759A1 (en) | 1998-09-08 | 2001-07-05 | Charles R. Shipley Jr. | Radiation sensitive compositions |
US6280911B1 (en) | 1998-09-10 | 2001-08-28 | Shipley Company, L.L.C. | Photoresist compositions comprising blends of ionic and non-ionic photoacid generators |
JP3773664B2 (ja) | 1998-09-11 | 2006-05-10 | 三菱電機株式会社 | 駆動制御装置、モジュール、および、複合モジュール |
US6410209B1 (en) | 1998-09-15 | 2002-06-25 | Shipley Company, L.L.C. | Methods utilizing antireflective coating compositions with exposure under 200 nm |
US6140254A (en) | 1998-09-18 | 2000-10-31 | Alliedsignal Inc. | Edge bead removal for nanoporous dielectric silica coatings |
JP3523081B2 (ja) | 1998-09-21 | 2004-04-26 | 信越化学工業株式会社 | 有機珪素樹脂の製造方法及び該製造方法で得られた有機珪素樹脂を用いたポリウレタンフォームの製造方法 |
JP3852889B2 (ja) | 1998-09-24 | 2006-12-06 | 富士写真フイルム株式会社 | フォトレジスト用反射防止膜材料組成物 |
US6190830B1 (en) | 1998-09-29 | 2001-02-20 | Kodak Polychrome Graphics Llc | Processless direct write printing plate having heat sensitive crosslinked vinyl polymer with organoonium group and methods of imaging and printing |
US6667424B1 (en) | 1998-10-02 | 2003-12-23 | Kimberly-Clark Worldwide, Inc. | Absorbent articles with nits and free-flowing particles |
US6562192B1 (en) | 1998-10-02 | 2003-05-13 | Kimberly-Clark Worldwide, Inc. | Absorbent articles with absorbent free-flowing particles and methods for producing the same |
US6503233B1 (en) | 1998-10-02 | 2003-01-07 | Kimberly-Clark Worldwide, Inc. | Absorbent article having good body fit under dynamic conditions |
US6673982B1 (en) | 1998-10-02 | 2004-01-06 | Kimberly-Clark Worldwide, Inc. | Absorbent article with center fill performance |
US6537723B1 (en) | 1998-10-05 | 2003-03-25 | Nippon Telegraph And Telephone Corporation | Photosensitive composition for manufacturing optical waveguide, production method thereof and polymer optical waveguide pattern formation method using the same |
JP3702108B2 (ja) | 1998-10-07 | 2005-10-05 | 株式会社東芝 | レジストパターン形成方法 |
JP2000129073A (ja) | 1998-10-26 | 2000-05-09 | Toyo Ink Mfg Co Ltd | 常温硬化性樹脂組成物および該樹脂組成物を塗工した基材 |
DE19852852A1 (de) | 1998-11-11 | 2000-05-18 | Inst Halbleiterphysik Gmbh | Lithographieverfahren zur Emitterstrukturierung von Bipolartransistoren |
US6231989B1 (en) | 1998-11-20 | 2001-05-15 | Dow Corning Corporation | Method of forming coatings |
US6251973B1 (en) | 1998-11-23 | 2001-06-26 | Akzo Nobel N.V. | Coatings and coating compositions of a reactive group-containing polymer, a hydrazide and a silane |
WO2000031183A1 (en) | 1998-11-24 | 2000-06-02 | The Dow Chemical Company | A composition containing a cross-linkable matrix precursor and a poragen, and a porous matrix prepared therefrom |
US5981675A (en) | 1998-12-07 | 1999-11-09 | Bausch & Lomb Incorporated | Silicone-containing macromonomers and low water materials |
US6326231B1 (en) | 1998-12-08 | 2001-12-04 | Advanced Micro Devices, Inc. | Use of silicon oxynitride ARC for metal layers |
US6235456B1 (en) | 1998-12-09 | 2001-05-22 | Advanced Micros Devices, Inc. | Graded anti-reflective barrier films for ultra-fine lithography |
US6506831B2 (en) | 1998-12-20 | 2003-01-14 | Honeywell International Inc. | Novolac polymer planarization films with high temperature stability |
US6635281B2 (en) | 1998-12-23 | 2003-10-21 | Alza Corporation | Gastric retaining oral liquid dosage form |
US6342249B1 (en) | 1998-12-23 | 2002-01-29 | Alza Corporation | Controlled release liquid active agent formulation dosage forms |
US6383466B1 (en) | 1998-12-28 | 2002-05-07 | Battelle Memorial Institute | Method of dehydroxylating a hydroxylated material and method of making a mesoporous film |
US6329017B1 (en) | 1998-12-23 | 2001-12-11 | Battelle Memorial Institute | Mesoporous silica film from a solution containing a surfactant and methods of making same |
KR100363695B1 (ko) | 1998-12-31 | 2003-04-11 | 주식회사 하이닉스반도체 | 유기난반사방지중합체및그의제조방법 |
KR20010101419A (ko) | 1999-01-07 | 2001-11-14 | 크리스 로저 에이취. | 유기히드리도실록산 수지로부터 생성된 유전막 |
US6544717B2 (en) | 1999-01-28 | 2003-04-08 | Tokyo Ohka Kogyo Co., Ltd. | Undercoating composition for photolithographic resist |
TW476865B (en) | 1999-01-28 | 2002-02-21 | Tokyo Ohka Kogyo Co Ltd | Undercoating composition for photolithographic resist |
US6137634A (en) | 1999-02-01 | 2000-10-24 | Intel Corporation | Microlens array |
US6187505B1 (en) | 1999-02-02 | 2001-02-13 | International Business Machines Corporation | Radiation sensitive silicon-containing resists |
US7709177B2 (en) | 1999-02-23 | 2010-05-04 | International Business Machines Corporation | Multilayered resist systems using tuned polymer films as underlayers and methods of fabrication thereof |
DE60021449T2 (de) | 1999-02-26 | 2006-05-24 | Showa Denko K.K. | Photopolymerisationsinitiator für Farbfilter, Farbzusammensetzung und Farbfilter |
US6316165B1 (en) | 1999-03-08 | 2001-11-13 | Shipley Company, L.L.C. | Planarizing antireflective coating compositions |
JP4270632B2 (ja) | 1999-03-12 | 2009-06-03 | 株式会社東芝 | ドライエッチングを用いた半導体装置の製造方法 |
US6849923B2 (en) | 1999-03-12 | 2005-02-01 | Kabushiki Kaisha Toshiba | Semiconductor device and manufacturing method of the same |
US6426125B1 (en) | 1999-03-17 | 2002-07-30 | General Electric Company | Multilayer article and method of making by ARC plasma deposition |
US6313257B1 (en) | 1999-03-23 | 2001-11-06 | Lord Corporation | Poly (mercaptopropylaryl) curatives |
JP3543669B2 (ja) | 1999-03-31 | 2004-07-14 | 信越化学工業株式会社 | 絶縁膜形成用塗布液及び絶縁膜の形成方法 |
US6204202B1 (en) | 1999-04-14 | 2001-03-20 | Alliedsignal, Inc. | Low dielectric constant porous films |
US6409883B1 (en) | 1999-04-16 | 2002-06-25 | Kimberly-Clark Worldwide, Inc. | Methods of making fiber bundles and fibrous structures |
FR2792323B1 (fr) | 1999-04-19 | 2001-07-06 | Centre Nat Etd Spatiales | Composition de revetement transparent non mouillable et articles revetus obtenus |
US6509259B1 (en) | 1999-06-09 | 2003-01-21 | Alliedsignal Inc. | Process of using siloxane dielectric films in the integration of organic dielectric films in electronic devices |
WO2003044078A1 (en) | 2001-11-15 | 2003-05-30 | Honeywell International Inc. | Anti-reflective coatings for photolithography and methods of preparation thereof |
EP1190277B1 (en) | 1999-06-10 | 2009-10-07 | AlliedSignal Inc. | Semiconductor having spin-on-glass anti-reflective coatings for photolithography |
US6824879B2 (en) | 1999-06-10 | 2004-11-30 | Honeywell International Inc. | Spin-on-glass anti-reflective coatings for photolithography |
US6268457B1 (en) | 1999-06-10 | 2001-07-31 | Allied Signal, Inc. | Spin-on glass anti-reflective coatings for photolithography |
US6890448B2 (en) | 1999-06-11 | 2005-05-10 | Shipley Company, L.L.C. | Antireflective hard mask compositions |
US6329118B1 (en) | 1999-06-21 | 2001-12-11 | Intel Corporation | Method for patterning dual damascene interconnects using a sacrificial light absorbing material |
US6696538B2 (en) | 1999-07-27 | 2004-02-24 | Lg Chemical Ltd. | Semiconductor interlayer dielectric material and a semiconductor device using the same |
US6623791B2 (en) | 1999-07-30 | 2003-09-23 | Ppg Industries Ohio, Inc. | Coating compositions having improved adhesion, coated substrates and methods related thereto |
MX238958B (es) | 1999-07-30 | 2006-07-27 | Ppg Ind Ohio Inc | Recubrimientos curados que tienen una mejorada resistencia al rayado, sustratos recubiertos y metodos relacionados con los mismos. |
US6107167A (en) | 1999-08-02 | 2000-08-22 | Advanced Micro Devices, Inc. | Simplified method of patterning polysilicon gate in a semiconductor device |
US6475892B1 (en) | 1999-08-02 | 2002-11-05 | Aadvanced Micro Devices, Inc. | Simplified method of patterning polysilicon gate in a semiconductor device |
US7888435B2 (en) | 1999-08-04 | 2011-02-15 | Hybrid Plastics, Inc. | Process for continuous production of olefin polyhedral oligomeric silsesquioxane cages |
US6335235B1 (en) | 1999-08-17 | 2002-01-01 | Advanced Micro Devices, Inc. | Simplified method of patterning field dielectric regions in a semiconductor device |
AR027842A1 (es) | 1999-08-23 | 2003-04-16 | Kimberly Clark Co | Un articulo absorbente el cual mantiene o mejora la salud de la piel |
US6318124B1 (en) | 1999-08-23 | 2001-11-20 | Alliedsignal Inc. | Nanoporous silica treated with siloxane polymers for ULSI applications |
AR025300A1 (es) | 1999-08-23 | 2002-11-20 | Kimberly Clark Co | Un articulo absorbente descartable con capacidad para respirar en humedo incrementada. |
JP2001079491A (ja) | 1999-09-10 | 2001-03-27 | Koito Mfg Co Ltd | 塗膜形成方法及び該方法で形成された車両用灯具 |
KR100703248B1 (ko) | 1999-09-13 | 2007-04-03 | 코닌클리즈케 필립스 일렉트로닉스 엔.브이. | 전기 램프 |
JP4248098B2 (ja) | 1999-09-20 | 2009-04-02 | 東京応化工業株式会社 | 反射防止膜形成用組成物及びレジストパターンの形成方法 |
WO2001024244A1 (en) | 1999-09-24 | 2001-04-05 | Infineon Technologies North America Corp. | High etch selectivity etchant for doped silicate glass |
US6410150B1 (en) | 1999-09-29 | 2002-06-25 | Jsr Corporation | Composition for film formation, method of film formation, and insulating film |
US6420441B1 (en) | 1999-10-01 | 2002-07-16 | Shipley Company, L.L.C. | Porous materials |
US20040089238A1 (en) | 1999-10-04 | 2004-05-13 | Jerome Birnbaum | Vacuum/gas phase reactor for dehydroxylation and alkylation of porous silica |
US6472076B1 (en) | 1999-10-18 | 2002-10-29 | Honeywell International Inc. | Deposition of organosilsesquioxane films |
US6315946B1 (en) | 1999-10-21 | 2001-11-13 | The United States Of America As Represented By The Secretary Of The Navy | Ultra low carbon bainitic weathering steel |
US6541107B1 (en) | 1999-10-25 | 2003-04-01 | Dow Corning Corporation | Nanoporous silicone resins having low dielectric constants |
US6359096B1 (en) | 1999-10-25 | 2002-03-19 | Dow Corning Corporation | Silicone resin compositions having good solution solubility and stability |
US6232424B1 (en) | 1999-12-13 | 2001-05-15 | Dow Corning Corporation | Soluble silicone resin compositions having good solution stability |
US6313045B1 (en) | 1999-12-13 | 2001-11-06 | Dow Corning Corporation | Nanoporous silicone resins having low dielectric constants and method for preparation |
US6403464B1 (en) | 1999-11-03 | 2002-06-11 | Taiwan Semiconductor Manufacturing Company | Method to reduce the moisture content in an organic low dielectric constant material |
US6391524B2 (en) | 1999-11-19 | 2002-05-21 | Kodak Polychrome Graphics Llc | Article having imagable coatings |
JP2001152023A (ja) | 1999-11-25 | 2001-06-05 | Jsr Corp | 膜形成用組成物 |
US6592980B1 (en) | 1999-12-07 | 2003-07-15 | Air Products And Chemicals, Inc. | Mesoporous films having reduced dielectric constants |
US6365266B1 (en) | 1999-12-07 | 2002-04-02 | Air Products And Chemicals, Inc. | Mesoporous films having reduced dielectric constants |
EP1167313B1 (en) | 1999-12-13 | 2015-09-23 | Nippon Sheet Glass Co., Ltd. | Low-reflection glass article |
TW468053B (en) | 1999-12-14 | 2001-12-11 | Nissan Chemical Ind Ltd | Antireflection film, process for forming the antireflection film, and antireflection glass |
US6902771B2 (en) | 2000-02-01 | 2005-06-07 | Jsr Corporation | Process for producing silica-based film, silica-based film, insulating film, and semiconductor device |
US20030104225A1 (en) | 2000-02-01 | 2003-06-05 | Jsr Corporation | Process for producing silica-based film, silica-based film, insulating film, and semiconductor device |
US20030157340A1 (en) | 2000-02-01 | 2003-08-21 | Jsr Corporation | Process for producing silica-based film, silica-based film, insulating film, and semiconductor device |
JP4195773B2 (ja) | 2000-04-10 | 2008-12-10 | Jsr株式会社 | 層間絶縁膜形成用組成物、層間絶縁膜の形成方法およびシリカ系層間絶縁膜 |
US6306736B1 (en) | 2000-02-04 | 2001-10-23 | The Regents Of The University Of California | Process for forming shaped group III-V semiconductor nanocrystals, and product formed using process |
MXPA01011348A (es) | 2000-02-08 | 2003-07-14 | Adsil Lc | Metodo para mejorar la eficiencia de la transferencia del calor utilizando recubrimientos de silano y articulos recubiertos producidos por el mismo. |
EP1255806B1 (en) | 2000-02-14 | 2006-09-27 | The Procter & Gamble Company | Stable, aqueous compositions for treating surfaces, especially fabrics |
US20050003215A1 (en) | 2000-02-16 | 2005-01-06 | Nigel Hacker | Synthesis of siloxane resins |
AU2001233290A1 (en) | 2000-02-22 | 2001-09-03 | Brewer Science, Inc. | Organic polymeric antireflective coatings deposited by chemical vapor deposition |
JP2001240800A (ja) | 2000-02-25 | 2001-09-04 | Nippon Sheet Glass Co Ltd | 所定表面形状を有する物品の製造方法 |
EP1268696A4 (en) | 2000-02-28 | 2005-01-26 | Adsil Lc | SILANE COATING COMPOSITIONS COATING ARTICLES OBTAINED THEREFROM AND USES THEREOF |
DE60138327D1 (de) | 2000-02-28 | 2009-05-28 | Jsr Corp | Zusammensetzung zur Filmerzeugung, Verfahren zur Filmerzeugung und Filme auf Basis von Siliciumoxid |
JP2001242803A (ja) | 2000-02-29 | 2001-09-07 | Sony Corp | 表示装置及びその製造方法 |
US6451420B1 (en) | 2000-03-17 | 2002-09-17 | Nanofilm, Ltd. | Organic-inorganic hybrid polymer and method of making same |
JP3604007B2 (ja) | 2000-03-29 | 2004-12-22 | 富士通株式会社 | 低誘電率被膜形成材料、及びそれを用いた被膜と半導体装置の製造方法 |
WO2001074937A1 (en) | 2000-03-30 | 2001-10-11 | General Electric Company | Transparent, flame retardant poly(arylene ether) blends |
JP3795333B2 (ja) | 2000-03-30 | 2006-07-12 | 東京応化工業株式会社 | 反射防止膜形成用組成物 |
US6593388B2 (en) | 2000-04-04 | 2003-07-15 | Renssealer Polytechnic Institute | Oligomeric and polymeric photosensitizers comprising a polynuclear aromatic group |
US6268294B1 (en) | 2000-04-04 | 2001-07-31 | Taiwan Semiconductor Manufacturing Company | Method of protecting a low-K dielectric material |
US7265062B2 (en) | 2000-04-04 | 2007-09-04 | Applied Materials, Inc. | Ionic additives for extreme low dielectric constant chemical formulations |
US6576568B2 (en) | 2000-04-04 | 2003-06-10 | Applied Materials, Inc. | Ionic additives for extreme low dielectric constant chemical formulations |
US7128976B2 (en) | 2000-04-10 | 2006-10-31 | Jsr Corporation | Composition for film formation, method of film formation, and silica-based film |
US6559070B1 (en) | 2000-04-11 | 2003-05-06 | Applied Materials, Inc. | Mesoporous silica films with mobile ion gettering and accelerated processing |
EP1146099B1 (en) | 2000-04-13 | 2006-03-22 | JSR Corporation | Coating composition, method for producing the same, cured product and coating film |
US6461717B1 (en) | 2000-04-24 | 2002-10-08 | Shipley Company, L.L.C. | Aperture fill |
TW453612U (en) | 2000-04-26 | 2001-09-01 | Ritdisplay Corp | Surface processing device of display panel |
US6504525B1 (en) | 2000-05-03 | 2003-01-07 | Xerox Corporation | Rotating element sheet material with microstructured substrate and method of use |
US6374738B1 (en) | 2000-05-03 | 2002-04-23 | Presstek, Inc. | Lithographic imaging with non-ablative wet printing members |
JP3846545B2 (ja) | 2000-06-08 | 2006-11-15 | 信越化学工業株式会社 | コーティング剤組成物、コーティング方法及び被覆物品 |
US6632535B1 (en) | 2000-06-08 | 2003-10-14 | Q2100, Inc. | Method of forming antireflective coatings |
US6852766B1 (en) | 2000-06-15 | 2005-02-08 | 3M Innovative Properties Company | Multiphoton photosensitization system |
US6420088B1 (en) | 2000-06-23 | 2002-07-16 | International Business Machines Corporation | Antireflective silicon-containing compositions as hardmask layer |
US6891237B1 (en) | 2000-06-27 | 2005-05-10 | Lucent Technologies Inc. | Organic semiconductor device having an active dielectric layer comprising silsesquioxanes |
US6323268B1 (en) | 2000-06-27 | 2001-11-27 | Dow Corning Corporation | Organosilicon water repellent compositions |
US20030176614A1 (en) | 2000-06-30 | 2003-09-18 | Nigel Hacker | Organohydridosiloxane resins with high organic content |
JP2002023350A (ja) | 2000-07-07 | 2002-01-23 | Fuji Photo Film Co Ltd | ネガ型平版印刷版原版 |
US6271273B1 (en) | 2000-07-14 | 2001-08-07 | Shipley Company, L.L.C. | Porous materials |
US6368400B1 (en) | 2000-07-17 | 2002-04-09 | Honeywell International | Absorbing compounds for spin-on-glass anti-reflective coatings for photolithography |
JP2002043423A (ja) | 2000-07-24 | 2002-02-08 | Tokyo Ohka Kogyo Co Ltd | 被膜の処理方法およびこの方法を用いた半導体素子の製造方法 |
JP4788852B2 (ja) | 2000-07-25 | 2011-10-05 | 住友金属鉱山株式会社 | 透明導電性基材とその製造方法およびこの製造方法に用いられる透明コート層形成用塗布液と透明導電性基材が適用された表示装置 |
US6635341B1 (en) | 2000-07-31 | 2003-10-21 | Ppg Industries Ohio, Inc. | Coating compositions comprising silyl blocked components, coating, coated substrates and methods related thereto |
TW556047B (en) | 2000-07-31 | 2003-10-01 | Shipley Co Llc | Coated substrate, method for forming photoresist relief image, and antireflective composition |
DE60120178T2 (de) | 2000-08-03 | 2007-04-26 | Ciba Speciality Chemicals Holding Inc. | Photostabile, silylierte benzotriazol uv-absorber und zusammensetzungen, die mit diesen stabilisiert werden |
WO2002016535A2 (en) | 2000-08-18 | 2002-02-28 | The Procter & Gamble Company | Compositions and methods for odor and fungal control of protective garments |
KR100795714B1 (ko) | 2000-08-21 | 2008-01-21 | 다우 글로벌 테크놀로지스 인크. | 마이크로일렉트로닉 장치의 제조에 있어서 유기 중합체유전체용 하드마스크로서의 유기 규산염 수지 |
JP4697363B2 (ja) | 2000-08-21 | 2011-06-08 | Jsr株式会社 | 膜形成用組成物および絶縁膜形成用材料 |
US6645685B2 (en) | 2000-09-06 | 2003-11-11 | Mitsubishi Paper Mills Limited | Process for producing printed wiring board |
US6596467B2 (en) | 2000-09-13 | 2003-07-22 | Shipley Company, L.L.C. | Electronic device manufacture |
JP3993373B2 (ja) | 2000-09-14 | 2007-10-17 | 信越化学工業株式会社 | ポリオルガノシロキサン化合物及びそれを含有するコーティング組成物 |
KR100382702B1 (ko) | 2000-09-18 | 2003-05-09 | 주식회사 엘지화학 | 유기실리케이트 중합체의 제조방법 |
US6505362B1 (en) | 2000-09-25 | 2003-01-14 | Thomas Scipio | Method and system for cushioning a mobile prone person |
US6465358B1 (en) | 2000-10-06 | 2002-10-15 | Intel Corporation | Post etch clean sequence for making a semiconductor device |
KR100382955B1 (ko) | 2000-10-10 | 2003-05-09 | 엘지.필립스 엘시디 주식회사 | 액정표시장치용 어레이기판과 그 제조방법 |
US6864040B2 (en) | 2001-04-11 | 2005-03-08 | Kodak Polychrome Graphics Llc | Thermal initiator system using leuco dyes and polyhalogene compounds |
US6884568B2 (en) | 2000-10-17 | 2005-04-26 | Kodak Polychrome Graphics, Llc | Stabilized infrared-sensitive polymerizable systems |
DE10051725A1 (de) | 2000-10-18 | 2002-05-02 | Merck Patent Gmbh | Wäßrige Beschichtungslösung für abriebfeste SiO2-Antireflexschichten |
DE10051724A1 (de) | 2000-10-18 | 2002-05-02 | Flabeg Gmbh & Co Kg | Thermisch vorgespanntes Glas mit einer abriebfesten, porösen SiO¶2¶-Antireflexschicht |
GB2368068B (en) | 2000-10-20 | 2003-05-21 | Reckitt Benckiser | Improvements in or relating to organic compositions |
US6756520B1 (en) | 2000-10-20 | 2004-06-29 | Kimberly-Clark Worldwide, Inc. | Hydrophilic compositions for use on absorbent articles to enhance skin barrier |
US6503526B1 (en) | 2000-10-20 | 2003-01-07 | Kimberly-Clark Worldwide, Inc. | Absorbent articles enhancing skin barrier function |
JP2002129103A (ja) | 2000-10-23 | 2002-05-09 | Jsr Corp | 膜形成用組成物および絶縁膜形成用材料 |
US6455416B1 (en) | 2000-10-24 | 2002-09-24 | Advanced Micro Devices, Inc. | Developer soluble dyed BARC for dual damascene process |
JP4029556B2 (ja) | 2000-11-01 | 2008-01-09 | Jsr株式会社 | 感光性絶縁樹脂組成物およびその硬化物 |
US6602552B1 (en) | 2000-11-14 | 2003-08-05 | Basf Corporation | Low temperature cure coating composition and method therefore |
JP4632522B2 (ja) | 2000-11-30 | 2011-02-16 | Nec液晶テクノロジー株式会社 | 反射型液晶表示装置の製造方法 |
US6699647B2 (en) | 2000-12-21 | 2004-03-02 | Eastman Kodak Company | High speed photothermographic materials containing tellurium compounds and methods of using same |
US6749860B2 (en) | 2000-12-22 | 2004-06-15 | Kimberly-Clark Worldwide, Inc. | Absorbent articles with non-aqueous compositions containing botanicals |
US20020128615A1 (en) | 2000-12-22 | 2002-09-12 | Tyrrell David John | Absorbent articles with non-aqueous compositions containing anionic polymers |
US6832064B2 (en) | 2000-12-29 | 2004-12-14 | Samsung Electronics Co., Ltd. | Seamless drying belt for electrophotographic process |
US6573328B2 (en) | 2001-01-03 | 2003-06-03 | Loctite Corporation | Low temperature, fast curing silicone compositions |
JP4862217B2 (ja) | 2001-01-24 | 2012-01-25 | Jsr株式会社 | 膜形成用組成物、膜の形成方法およびシリカ系膜 |
WO2002058699A1 (en) | 2001-01-25 | 2002-08-01 | Bristol-Myers Squibb Company | Pharmaceutical forms of epothilones for oral administration |
DE10103421A1 (de) | 2001-01-26 | 2002-08-14 | Ge Bayer Silicones Gmbh & Co | Polyorganosiloxan-Zusammensetzung |
US7026053B2 (en) | 2001-01-29 | 2006-04-11 | Jsr Corporation | Process for producing silica-based film, silica-based film, insulating film, and semiconductor device |
US6465889B1 (en) | 2001-02-07 | 2002-10-15 | Advanced Micro Devices, Inc. | Silicon carbide barc in dual damascene processing |
JP2002235037A (ja) | 2001-02-13 | 2002-08-23 | Jsr Corp | 膜形成用組成物の製造方法、膜形成用組成物、膜の形成方法およびシリカ系膜 |
US6709257B2 (en) | 2001-02-20 | 2004-03-23 | Q2100, Inc. | Eyeglass lens forming apparatus with sensor |
US6758663B2 (en) | 2001-02-20 | 2004-07-06 | Q2100, Inc. | System for preparing eyeglass lenses with a high volume curing unit |
US6702564B2 (en) | 2001-02-20 | 2004-03-09 | Q2100, Inc. | System for preparing an eyeglass lens using colored mold holders |
US6752613B2 (en) | 2001-02-20 | 2004-06-22 | Q2100, Inc. | Apparatus for preparing an eyeglass lens having a controller for initiation of lens curing |
US6712331B2 (en) | 2001-02-20 | 2004-03-30 | Q2100, Inc. | Holder for mold assemblies with indicia |
US6790024B2 (en) | 2001-02-20 | 2004-09-14 | Q2100, Inc. | Apparatus for preparing an eyeglass lens having multiple conveyor systems |
US6612828B2 (en) | 2001-02-20 | 2003-09-02 | Q2100, Inc. | Fill system with controller for monitoring use |
US6655946B2 (en) | 2001-02-20 | 2003-12-02 | Q2100, Inc. | Apparatus for preparing an eyeglass lens having a controller for conveyor and curing units |
US7011773B2 (en) | 2001-02-20 | 2006-03-14 | Q2100, Inc. | Graphical interface to display mold assembly position in a lens forming apparatus |
US6676398B2 (en) | 2001-02-20 | 2004-01-13 | Q2100, Inc. | Apparatus for preparing an eyeglass lens having a prescription reader |
US7052262B2 (en) | 2001-02-20 | 2006-05-30 | Q2100, Inc. | System for preparing eyeglasses lens with filling station |
US6808381B2 (en) | 2001-02-20 | 2004-10-26 | Q2100, Inc. | Apparatus for preparing an eyeglass lens having a controller |
US7139636B2 (en) | 2001-02-20 | 2006-11-21 | Q2100, Inc. | System for preparing eyeglass lenses with bar code reader |
US6726463B2 (en) | 2001-02-20 | 2004-04-27 | Q2100, Inc. | Apparatus for preparing an eyeglass lens having a dual computer system controller |
US6875005B2 (en) | 2001-02-20 | 2005-04-05 | Q1200, Inc. | Apparatus for preparing an eyeglass lens having a gating device |
US6840752B2 (en) | 2001-02-20 | 2005-01-11 | Q2100, Inc. | Apparatus for preparing multiple eyeglass lenses |
US6893245B2 (en) | 2001-02-20 | 2005-05-17 | Q2100, Inc. | Apparatus for preparing an eyeglass lens having a computer system controller |
US6717181B2 (en) | 2001-02-22 | 2004-04-06 | Semiconductor Energy Laboratory Co., Ltd. | Luminescent device having thin film transistor |
US6703462B2 (en) | 2001-08-09 | 2004-03-09 | Dielectric Systems Inc. | Stabilized polymer film and its manufacture |
US20030198578A1 (en) | 2002-04-18 | 2003-10-23 | Dielectric Systems, Inc. | Multi-stage-heating thermal reactor for transport polymerization |
US6797343B2 (en) | 2001-12-20 | 2004-09-28 | Dielectric Systems, Inc. | Dielectric thin films from fluorinated precursors |
US6825303B2 (en) | 2001-02-26 | 2004-11-30 | Dielectric Systems, Inc. | Integration of low ε thin films and Ta into Cu dual damascene |
US20020123592A1 (en) | 2001-03-02 | 2002-09-05 | Zenastra Photonics Inc. | Organic-inorganic hybrids surface adhesion promoter |
KR100496420B1 (ko) | 2001-03-02 | 2005-06-17 | 삼성에스디아이 주식회사 | 2층구조의 소오스/드레인 전극을 갖는 박막 트랜지스터 및그의 제조방법과 이를 이용한 액티브 매트릭스형 표시소자및 그의 제조방법 |
US6685983B2 (en) | 2001-03-14 | 2004-02-03 | International Business Machines Corporation | Defect-free dielectric coatings and preparation thereof using polymeric nitrogenous porogens |
US6582861B2 (en) | 2001-03-16 | 2003-06-24 | Applied Materials, Inc. | Method of reshaping a patterned organic photoresist surface |
JP4545973B2 (ja) | 2001-03-23 | 2010-09-15 | 富士通株式会社 | シリコン系組成物、低誘電率膜、半導体装置および低誘電率膜の製造方法 |
JP2002285086A (ja) | 2001-03-26 | 2002-10-03 | Jsr Corp | 膜形成用組成物、膜の形成方法およびシリカ系膜 |
JP3908552B2 (ja) | 2001-03-29 | 2007-04-25 | Nec液晶テクノロジー株式会社 | 液晶表示装置及びその製造方法 |
US6617257B2 (en) | 2001-03-30 | 2003-09-09 | Lam Research Corporation | Method of plasma etching organic antireflective coating |
US6678026B2 (en) | 2001-04-10 | 2004-01-13 | Seiko Epson Corporation | Liquid crystal device and electronic apparatus |
US6893797B2 (en) | 2001-11-09 | 2005-05-17 | Kodak Polychrome Graphics Llc | High speed negative-working thermal printing plates |
US6846614B2 (en) | 2002-02-04 | 2005-01-25 | Kodak Polychrome Graphics Llc | On-press developable IR sensitive printing plates |
US20040091811A1 (en) | 2002-10-30 | 2004-05-13 | Munnelly Heidi M. | Hetero-substituted aryl acetic acid co-initiators for IR-sensitive compositions |
US7056989B2 (en) | 2001-05-01 | 2006-06-06 | Korea Institute Of Science And Technology | Polyalkylaromaticsilsesquioxane and preparation method thereof |
US6599995B2 (en) | 2001-05-01 | 2003-07-29 | Korea Institute Of Science And Technology | Polyalkylaromaticsilsesquioxane and preparation method thereof |
TW576859B (en) | 2001-05-11 | 2004-02-21 | Shipley Co Llc | Antireflective coating compositions |
KR100744955B1 (ko) | 2001-05-21 | 2007-08-02 | 엘지.필립스 엘시디 주식회사 | 횡전계방식 액정표시장치용 어레이기판과 그 제조방법 |
JP4146105B2 (ja) | 2001-05-30 | 2008-09-03 | 富士フイルム株式会社 | 紫外線吸収剤及びその製造方法、紫外線吸収剤を含有する組成物、ならびに画像形成方法 |
US6740685B2 (en) | 2001-05-30 | 2004-05-25 | Honeywell International Inc. | Organic compositions |
US6448185B1 (en) | 2001-06-01 | 2002-09-10 | Intel Corporation | Method for making a semiconductor device that has a dual damascene interconnect |
AU2002305849B2 (en) | 2001-06-05 | 2008-01-17 | Flexplay Technologies, Inc. | Limited play optical devices with interstitial reactive layer and methods of making same |
US6558880B1 (en) | 2001-06-06 | 2003-05-06 | Eastman Kodak Company | Thermally developable imaging materials containing heat-bleachable antihalation composition |
JP4181312B2 (ja) | 2001-06-25 | 2008-11-12 | 富士フイルム株式会社 | ネガ型画像記録材料 |
US6890855B2 (en) | 2001-06-27 | 2005-05-10 | International Business Machines Corporation | Process of removing residue material from a precision surface |
SG120873A1 (en) | 2001-06-29 | 2006-04-26 | Jsr Corp | Acid generator, sulfonic acid, sulfonic acid derivatives and radiation-sensitive resin composition |
JP4965033B2 (ja) | 2001-06-29 | 2012-07-04 | 東レ・ダウコーニング株式会社 | 液状アルコキシシリル官能性シリコーン樹脂、その製造方法および硬化性シリコーン樹脂組成物 |
DE10135640A1 (de) | 2001-07-21 | 2003-02-06 | Covion Organic Semiconductors | Lösungen organischer Halbleiter |
US6703169B2 (en) | 2001-07-23 | 2004-03-09 | Applied Materials, Inc. | Method of preparing optically imaged high performance photomasks |
US6596404B1 (en) | 2001-07-26 | 2003-07-22 | Dow Corning Corporation | Siloxane resins |
US6649212B2 (en) | 2001-07-30 | 2003-11-18 | Guardian Industries Corporation | Modified silicon-based UV absorbers useful in crosslinkable polysiloxane coatings via sol-gel polymerization |
US6592999B1 (en) | 2001-07-31 | 2003-07-15 | Ppg Industries Ohio, Inc. | Multi-layer composites formed from compositions having improved adhesion, coating compositions, and methods related thereto |
JP2003050459A (ja) | 2001-08-07 | 2003-02-21 | Hitachi Chem Co Ltd | 感光性樹脂組成物、感光性エレメント、レジストパターンの製造法およびプリント配線板の製造法 |
JP2003064307A (ja) | 2001-08-28 | 2003-03-05 | Hitachi Chem Co Ltd | シリカ系被膜、シリカ系被膜形成用組成物、シリカ系被膜の製造方法及び電子部品 |
JP4972834B2 (ja) | 2001-08-28 | 2012-07-11 | 日立化成工業株式会社 | シロキサン樹脂 |
KR100436220B1 (ko) | 2001-08-30 | 2004-06-12 | 주식회사 네패스 | 바닥 반사방지막용 유기 중합체, 그의 제조방법 및 그를함유하는 조성물 |
US6514677B1 (en) | 2001-08-31 | 2003-02-04 | Eastman Kodak Company | Thermally developable infrared sensitive imaging materials containing heat-bleachable antihalation composition |
US6824952B1 (en) | 2001-09-13 | 2004-11-30 | Microchem Corp. | Deep-UV anti-reflective resist compositions |
DE10146687C1 (de) | 2001-09-21 | 2003-06-26 | Flabeg Solarglas Gmbh & Co Kg | Glas mit einer porösen Antireflex-Oberflächenbeschichtung sowie Verfahren zur Herstellung des Glases und Verwendung eines derartigen Glases |
KR20030027694A (ko) | 2001-09-25 | 2003-04-07 | 제이에스알 가부시끼가이샤 | 막형성 방법, 적층막, 절연막 및 반도체용 기판 |
TW591341B (en) | 2001-09-26 | 2004-06-11 | Shipley Co Llc | Coating compositions for use with an overcoated photoresist |
JP3918942B2 (ja) | 2001-10-10 | 2007-05-23 | 日産化学工業株式会社 | リソグラフィー用反射防止膜形成組成物 |
US6730461B2 (en) | 2001-10-26 | 2004-05-04 | Eastman Kodak Company | Thermally developable imaging materials with reduced mottle providing improved image uniformity |
US6949297B2 (en) | 2001-11-02 | 2005-09-27 | 3M Innovative Properties Company | Hybrid adhesives, articles, and methods |
JP4381636B2 (ja) | 2001-11-05 | 2009-12-09 | 新日鐵化学株式会社 | シリコーン樹脂組成物及びシリコーン樹脂成形体 |
US6617609B2 (en) | 2001-11-05 | 2003-09-09 | 3M Innovative Properties Company | Organic thin film transistor with siloxane polymer interface |
KR20040075866A (ko) | 2001-11-15 | 2004-08-30 | 허니웰 인터내셔날 인코포레이티드 | 포토리소그래피용 스핀-온 무반사 코팅 |
EP1478681A4 (en) | 2001-11-16 | 2006-10-11 | Honeywell Int Inc | SPIN ON GLASS ANTIREFLECTION COATINGS FOR PHOTOLITHOGRAPHY |
US6573175B1 (en) | 2001-11-30 | 2003-06-03 | Micron Technology, Inc. | Dry low k film application for interlevel dielectric and method of cleaning etched features |
KR100635042B1 (ko) | 2001-12-14 | 2006-10-17 | 삼성에스디아이 주식회사 | 전면전극을 구비한 평판표시장치 및 그의 제조방법 |
JP4233456B2 (ja) | 2001-12-14 | 2009-03-04 | 旭化成株式会社 | 低屈折率薄膜形成用塗布組成物 |
JP2003183575A (ja) | 2001-12-20 | 2003-07-03 | Mitsui Chemicals Inc | 保存安定性に優れる多孔質シリカフィルム形成用塗布液、該塗布液の製造方法、並びに、均一なメソ孔が規則的に配列された多孔質シリカフィルムの製造方法、該多孔質シリカフィルムおよびその用途 |
KR100652046B1 (ko) | 2001-12-22 | 2006-11-30 | 엘지.필립스 엘시디 주식회사 | 액정표시소자 및 그 제조방법 |
US20030171729A1 (en) | 2001-12-28 | 2003-09-11 | Kaun James Martin | Multifunctional containment sheet and system for absorbent atricles |
US6831189B2 (en) | 2002-01-08 | 2004-12-14 | Silecs Oy | Methods and compounds for making coatings, waveguides and other optical devices |
US20030171607A1 (en) | 2002-01-08 | 2003-09-11 | Rantala Juha T. | Methods and compounds for making coatings, waveguides and other optical devices |
US20030176718A1 (en) | 2002-01-08 | 2003-09-18 | Rantala Juha T. | Methods and compounds for making coatings, waveguides and other optical devices |
US6924384B2 (en) | 2002-01-08 | 2005-08-02 | Silecs Oy | Methods and compounds for making coatings, waveguides and other optical devices |
US6803476B2 (en) | 2002-01-08 | 2004-10-12 | Silecs Oy | Methods and compounds for making coatings, waveguides and other optical devices |
US6844131B2 (en) | 2002-01-09 | 2005-01-18 | Clariant Finance (Bvi) Limited | Positive-working photoimageable bottom antireflective coating |
AU2003201435A1 (en) | 2002-01-17 | 2003-07-30 | Silecs Oy | Thin films and methods for the preparation thereof |
US20050032357A1 (en) | 2002-01-17 | 2005-02-10 | Rantala Juha T. | Dielectric materials and methods for integrated circuit applications |
US7060634B2 (en) | 2002-01-17 | 2006-06-13 | Silecs Oy | Materials and methods for forming hybrid organic-inorganic dielectric materials for integrated circuit applications |
US7144827B2 (en) | 2002-01-17 | 2006-12-05 | Silecs Oy | Poly(organosiloxane) materials and methods for hybrid organic-inorganic dielectrics for integrated circuit applications |
US7351725B2 (en) | 2002-01-18 | 2008-04-01 | Merck & Co., Inc. | N-(benzyl)aminoalkylcarboxylates, phosphinates, phosphonates and tetrazoles as Edg receptor agonists |
JP2003211070A (ja) | 2002-01-21 | 2003-07-29 | Toshiba Corp | 塗膜の形成方法、半導体装置の製造方法および塗布液 |
CN100336137C (zh) | 2002-01-28 | 2007-09-05 | 捷时雅株式会社 | 形成电介体的光敏组合物以及利用该组合物的电介体 |
AU2003207855A1 (en) | 2002-02-05 | 2003-09-02 | Gencell Corporation | Silane coated metallic fuel cell components and methods of manufacture |
US20040077757A1 (en) | 2002-02-06 | 2004-04-22 | Toru Araki | Coating composition for use in producing an insulating thin film |
US7682701B2 (en) | 2002-02-27 | 2010-03-23 | Hitachi Chemical Co., Ltd. | Composition for forming silica based coating film, silica based coating film and method for preparation thereof, and electronic parts |
KR100819226B1 (ko) | 2002-02-27 | 2008-04-02 | 히다치 가세고교 가부시끼가이샤 | 실리카계 피막형성용 조성물, 실리카계 피막 및 그제조방법 및 전자부품 |
US7687590B2 (en) | 2002-02-27 | 2010-03-30 | Hitachi Chemical Company, Ltd. | Composition for forming silica based coating film, silica based coating film and method for preparation thereof, and electronic parts |
JP4110797B2 (ja) | 2002-02-27 | 2008-07-02 | 日立化成工業株式会社 | シリカ系被膜形成用組成物、シリカ系被膜の製造方法及び電子部品 |
KR100994818B1 (ko) | 2002-03-04 | 2010-11-16 | 롬 앤드 하스 일렉트로닉 머트어리얼즈, 엘.엘.씨 | 단파장 이미지화용 네거티브 포토레지스트 |
JP3966026B2 (ja) | 2002-03-06 | 2007-08-29 | 日立化成工業株式会社 | シリカ系被膜形成用組成物、シリカ系被膜及びその製造方法、並びに電子部品 |
DE10213294B4 (de) | 2002-03-25 | 2015-05-13 | Osram Gmbh | Verwendung eines UV-beständigen Polymers in der Optoelektronik sowie im Außenanwendungsbereich, UV-beständiges Polymer sowie optisches Bauelement |
US6906157B2 (en) | 2002-04-09 | 2005-06-14 | Eastman Kodak Company | Polymer particle stabilized by dispersant and method of preparation |
US7381441B2 (en) | 2002-04-10 | 2008-06-03 | Honeywell International Inc. | Low metal porous silica dielectric for integral circuit applications |
AU2002309806A1 (en) | 2002-04-10 | 2003-10-27 | Honeywell International, Inc. | New porogens for porous silica dielectric for integral circuit applications |
US6984476B2 (en) | 2002-04-15 | 2006-01-10 | Sharp Kabushiki Kaisha | Radiation-sensitive resin composition, forming process for forming patterned insulation film, active matrix board and flat-panel display device equipped with the same, and process for producing flat-panel display device |
US6730454B2 (en) | 2002-04-16 | 2004-05-04 | International Business Machines Corporation | Antireflective SiO-containing compositions for hardmask layer |
ATE401364T1 (de) | 2002-04-18 | 2008-08-15 | Lg Chemical Ltd | Organisches silicatpolymer und dieses umfassender isolierfilm |
US6787281B2 (en) | 2002-05-24 | 2004-09-07 | Kodak Polychrome Graphics Llc | Selected acid generating agents and their use in processes for imaging radiation-sensitive elements |
US7122880B2 (en) | 2002-05-30 | 2006-10-17 | Air Products And Chemicals, Inc. | Compositions for preparing low dielectric materials |
AU2002306240A1 (en) | 2002-06-04 | 2003-12-19 | Fujitsu Limited | Antibacterial and anti-staining paint for building materia l and building material coated therewith |
US7897979B2 (en) | 2002-06-07 | 2011-03-01 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device and manufacturing method thereof |
US20030230548A1 (en) | 2002-06-18 | 2003-12-18 | Wolfgang Sievert | Acid etching mixture having reduced water content |
KR100515583B1 (ko) | 2002-06-27 | 2005-09-20 | 주식회사 엘지화학 | 유기실리케이트 중합체 및 이를 함유하는 절연막 |
JP3631236B2 (ja) | 2002-07-12 | 2005-03-23 | 東京応化工業株式会社 | シリカ系有機被膜の製造方法 |
CN1248556C (zh) | 2002-08-05 | 2006-03-29 | 佳能株式会社 | 电极和布线材料吸收用底层图形形成材料及其应用 |
US6896821B2 (en) | 2002-08-23 | 2005-05-24 | Dalsa Semiconductor Inc. | Fabrication of MEMS devices with spin-on glass |
DE10242418A1 (de) | 2002-09-12 | 2004-03-25 | Wacker-Chemie Gmbh | Verfahren zur Herstellung von Organopolysiloxanharz |
KR100489590B1 (ko) | 2002-09-19 | 2005-05-16 | 엘지.필립스 엘시디 주식회사 | 투과형 유기전계발광 소자 및 그의 제조방법 |
JP4032234B2 (ja) | 2002-09-30 | 2008-01-16 | 信越化学工業株式会社 | ケイ素含有重合性化合物、その製造方法、高分子化合物、レジスト材料及びパターン形成方法 |
US20040067437A1 (en) | 2002-10-06 | 2004-04-08 | Shipley Company, L.L.C. | Coating compositions for use with an overcoated photoresist |
US7005390B2 (en) | 2002-10-09 | 2006-02-28 | Intel Corporation | Replenishment of surface carbon and surface passivation of low-k porous silicon-based dielectric materials |
KR100860523B1 (ko) | 2002-10-11 | 2008-09-26 | 엘지디스플레이 주식회사 | 횡전계방식 액정 표시 소자 및 그 제조방법 |
US7038328B2 (en) | 2002-10-15 | 2006-05-02 | Brewer Science Inc. | Anti-reflective compositions comprising triazine compounds |
JP2004212946A (ja) | 2002-10-21 | 2004-07-29 | Rohm & Haas Electronic Materials Llc | Siポリマー含有フォトレジスト |
US6783468B2 (en) | 2002-10-24 | 2004-08-31 | Acushnet Company | Low deformation golf ball |
US7122384B2 (en) | 2002-11-06 | 2006-10-17 | E. I. Du Pont De Nemours And Company | Resonant light scattering microparticle methods |
AU2003295517A1 (en) | 2002-11-12 | 2004-06-03 | Honeywell International Inc | Anti-reflective coatings for photolithography and methods of preparation thereof |
JP2004161875A (ja) | 2002-11-13 | 2004-06-10 | Shin Etsu Chem Co Ltd | 多孔質膜形成用組成物、多孔質膜とその製造方法、層間絶縁間膜及び半導体装置 |
US7465414B2 (en) | 2002-11-14 | 2008-12-16 | Transitions Optical, Inc. | Photochromic article |
JP2004177952A (ja) | 2002-11-20 | 2004-06-24 | Rohm & Haas Electronic Materials Llc | 多層フォトレジスト系 |
EP1422565A3 (en) | 2002-11-20 | 2005-01-05 | Shipley Company LLC | Multilayer photoresist systems |
US20070027225A1 (en) | 2002-12-03 | 2007-02-01 | Lyu Yi Y | Composition for preparing porous dielectric thin films |
KR100533538B1 (ko) | 2002-12-03 | 2005-12-05 | 삼성전자주식회사 | 새로운 기공형성물질을 포함하는 다공성 층간 절연막을형성하기 위한 조성물 |
GB2396244B (en) | 2002-12-09 | 2006-03-22 | Lg Philips Lcd Co Ltd | Array substrate having color filter on thin film transistor s tructure for LCD device and method of fabricating the same |
US7133088B2 (en) | 2002-12-23 | 2006-11-07 | Lg.Philips Lcd Co., Ltd. | Liquid crystal display device and method of fabricating the same |
KR100887671B1 (ko) | 2002-12-23 | 2009-03-11 | 엘지디스플레이 주식회사 | 액정표시장치용 어레이기판과 그 제조방법 |
KR20040061292A (ko) | 2002-12-30 | 2004-07-07 | 엘지.필립스 엘시디 주식회사 | 액정표시소자 제조방법 |
US7018779B2 (en) | 2003-01-07 | 2006-03-28 | International Business Machines Corporation | Apparatus and method to improve resist line roughness in semiconductor wafer processing |
WO2004068555A2 (en) | 2003-01-25 | 2004-08-12 | Honeywell International Inc | Repair and restoration of damaged dielectric materials and films |
US20040166434A1 (en) | 2003-02-21 | 2004-08-26 | Dammel Ralph R. | Photoresist composition for deep ultraviolet lithography |
US7507783B2 (en) | 2003-02-24 | 2009-03-24 | Brewer Science Inc. | Thermally curable middle layer comprising polyhedral oligomeric silsesouioxanes for 193-nm trilayer resist process |
JP4370111B2 (ja) | 2003-03-06 | 2009-11-25 | 日華化学株式会社 | 親水化処理剤組成物及び親水性保護膜形成方法 |
US6902861B2 (en) | 2003-03-10 | 2005-06-07 | Kodak Polychrome Graphics, Llc | Infrared absorbing compounds and their use in photoimageable elements |
US7354751B2 (en) | 2003-03-12 | 2008-04-08 | Mitsukan Group Corporation | Alcohol dehydrogenase gene of acetic acid bacterium |
US20040180011A1 (en) | 2003-03-13 | 2004-09-16 | Wacker Chemical Corporation | Cosmetic formulation comprising alkyl phenyl silsesquioxane resins |
JP3674041B2 (ja) | 2003-03-13 | 2005-07-20 | 日立化成工業株式会社 | シリカ系被膜形成用組成物、シリカ系被膜及びその形成方法、並びにシリカ系被膜を備える電子部品 |
JP4409515B2 (ja) | 2003-04-09 | 2010-02-03 | エルジー・ケム・リミテッド | 絶縁膜形成用コーティング組成物、その組成物を使用した低誘電絶縁膜の製造方法、その組成物より製造される半導体素子用低誘電絶縁膜およびその絶縁膜からなる半導体素子 |
JP2004307694A (ja) | 2003-04-09 | 2004-11-04 | Shin Etsu Chem Co Ltd | 多孔質膜形成用組成物、多孔質膜の製造方法、多孔質膜、層間絶縁膜及び半導体装置。 |
KR100645682B1 (ko) | 2003-04-17 | 2006-11-13 | 주식회사 엘지화학 | 유기실록산 수지 및 이를 이용한 절연막 |
WO2004101651A1 (en) | 2003-05-08 | 2004-11-25 | Honeywell International Inc. | Minimization of coating defects for compositions comprising silicon-based compounds and methods of producing and processing |
US7060637B2 (en) | 2003-05-12 | 2006-06-13 | Micron Technology, Inc. | Methods of forming intermediate semiconductor device structures using spin-on, photopatternable, interlayer dielectric materials |
KR100519948B1 (ko) | 2003-05-20 | 2005-10-10 | 엘지.필립스 엘시디 주식회사 | 비정질 실리콘의 결정화 공정 및 이를 이용한 스위칭 소자 |
DK1479734T3 (da) | 2003-05-20 | 2009-05-11 | Dsm Ip Assets Bv | Nanostruktureret overflade-coatingsproces, nanostrukturerede coatinger og artikler omfattende coatingen |
US7303785B2 (en) | 2003-06-03 | 2007-12-04 | Shin-Etsu Chemical Co., Ltd. | Antireflective film material, and antireflective film and pattern formation method using the same |
US7202013B2 (en) | 2003-06-03 | 2007-04-10 | Shin-Etsu Chemical Co., Ltd. | Antireflective film material, and antireflective film and pattern formation method using the same |
US7008476B2 (en) | 2003-06-11 | 2006-03-07 | Az Electronic Materials Usa Corp. | Modified alginic acid of alginic acid derivatives and thermosetting anti-reflective compositions thereof |
US6899988B2 (en) | 2003-06-13 | 2005-05-31 | Kodak Polychrome Graphics Llc | Laser thermal metallic donors |
KR100507967B1 (ko) | 2003-07-01 | 2005-08-10 | 삼성전자주식회사 | 실록산계 수지 및 이를 이용한 반도체 층간 절연막 |
KR100504291B1 (ko) | 2003-07-14 | 2005-07-27 | 삼성전자주식회사 | 게르마늄을 포함하는 실록산계 수지 및 이를 이용한반도체 층간 절연막 형성 방법 |
US7109519B2 (en) | 2003-07-15 | 2006-09-19 | 3M Innovative Properties Company | Bis(2-acenyl)acetylene semiconductors |
JP2005049542A (ja) | 2003-07-31 | 2005-02-24 | Fuji Photo Film Co Ltd | 画像形成方法及び現像液 |
CA2543366A1 (en) | 2003-08-01 | 2005-02-24 | Dow Corning Corporation | Silicone based dielectric coatings and films for photovoltaic applications |
JP2007501110A (ja) | 2003-08-04 | 2007-01-25 | チバ スペシャルティ ケミカルズ ホールディング インコーポレーテッド | 強く付着しているコーティングの製造方法 |
US6942083B2 (en) | 2003-08-07 | 2005-09-13 | Ford Global Technologies, Llc | Viscous fan clutch actuated by a heating element and ambient air |
US7172849B2 (en) | 2003-08-22 | 2007-02-06 | International Business Machines Corporation | Antireflective hardmask and uses thereof |
JP2005099693A (ja) | 2003-09-05 | 2005-04-14 | Hitachi Chem Co Ltd | 反射防止膜形成用組成物及びそれを用いた反射防止膜の製造方法、光学部品、太陽電池ユニット |
US7622399B2 (en) | 2003-09-23 | 2009-11-24 | Silecs Oy | Method of forming low-k dielectrics using a rapid curing process |
US7303855B2 (en) | 2003-10-03 | 2007-12-04 | Shin-Etsu Chemical Co., Ltd. | Photoresist undercoat-forming material and patterning process |
US20050074981A1 (en) | 2003-10-06 | 2005-04-07 | Meagley Robert P. | Increasing the etch resistance of photoresists |
US7270931B2 (en) | 2003-10-06 | 2007-09-18 | International Business Machines Corporation | Silicon-containing compositions for spin-on ARC/hardmask materials |
WO2005037907A1 (en) | 2003-10-07 | 2005-04-28 | Honeywell International Inc. | Coatings and hard mask compositions for integrated circuit applications, methods of production and uses thereof |
WO2005036270A1 (ja) | 2003-10-07 | 2005-04-21 | Hitachi Chemical Co., Ltd. | 放射線硬化性組成物、その保存方法、硬化膜形成方法、パターン形成方法、パターン使用方法、電子部品及び光導波路 |
US8475666B2 (en) | 2004-09-15 | 2013-07-02 | Honeywell International Inc. | Method for making toughening agent materials |
KR100979355B1 (ko) | 2003-10-09 | 2010-08-31 | 삼성전자주식회사 | 다반응성 환형 실리케이트 화합물, 상기 화합물로부터제조된 실록산계 중합체 및 상기 중합체를 이용한 절연막제조방법 |
US7553769B2 (en) | 2003-10-10 | 2009-06-30 | Tokyo Electron Limited | Method for treating a dielectric film |
JP4564735B2 (ja) | 2003-10-22 | 2010-10-20 | 旭硝子株式会社 | 研磨スラリーおよび半導体集積回路の製造方法 |
KR20050040275A (ko) | 2003-10-28 | 2005-05-03 | 삼성전자주식회사 | 절연막 형성용 조성물 및 이를 이용한 절연막 또는 절연막패턴의 형성방법 |
US7192910B2 (en) | 2003-10-28 | 2007-03-20 | Sachem, Inc. | Cleaning solutions and etchants and methods for using same |
TWI360726B (en) | 2003-10-30 | 2012-03-21 | Nissan Chemical Ind Ltd | Sublayer coating-forming composition containing de |
JP4447283B2 (ja) | 2003-11-05 | 2010-04-07 | 東京応化工業株式会社 | シリカ系被膜形成用塗布液 |
JP2005139265A (ja) | 2003-11-05 | 2005-06-02 | Tokyo Ohka Kogyo Co Ltd | シリカ系被膜形成用塗布液 |
US8053159B2 (en) | 2003-11-18 | 2011-11-08 | Honeywell International Inc. | Antireflective coatings for via fill and photolithography applications and methods of preparation thereof |
EP1689824B1 (en) | 2003-11-21 | 2016-10-12 | BrisMat Inc. | Silica films and method of production thereof |
US7470634B2 (en) | 2003-11-24 | 2008-12-30 | Samsung Electronics Co., Ltd. | Method for forming interlayer dielectric film for semiconductor device by using polyhedral molecular silsesquioxane |
KR101007807B1 (ko) | 2003-12-13 | 2011-01-14 | 삼성전자주식회사 | 다반응성 선형 실록산 화합물, 상기 화합물로부터 제조된실록산 중합체 및 상기 중합체를 이용한 절연막 제조방법 |
US20050136687A1 (en) | 2003-12-19 | 2005-06-23 | Honeywell International Inc | Porous silica dielectric having improved etch selectivity towards inorganic anti-reflective coating materials for integrated circuit applications, and methods of manufacture |
TWI237892B (en) | 2004-01-13 | 2005-08-11 | Ind Tech Res Inst | Method of forming thin-film transistor devices with electro-static discharge protection |
GB0401202D0 (en) | 2004-01-20 | 2004-02-25 | Ucl Biomedica Plc | Polymer for use in conduits and medical devices |
KR100621541B1 (ko) | 2004-02-06 | 2006-09-14 | 삼성전자주식회사 | 듀얼다마신 배선 형성방법 및 듀얼다마신 공정에서 보호막제거용 식각액 |
DE102004008442A1 (de) | 2004-02-19 | 2005-09-15 | Degussa Ag | Siliciumverbindungen für die Erzeugung von SIO2-haltigen Isolierschichten auf Chips |
US20050196974A1 (en) | 2004-03-02 | 2005-09-08 | Weigel Scott J. | Compositions for preparing low dielectric materials containing solvents |
JP4792732B2 (ja) | 2004-11-18 | 2011-10-12 | 株式会社日立製作所 | 反射防止膜及び反射防止膜を用いた光学部品及び反射防止膜を用いた画像表示装置 |
US7172913B2 (en) | 2004-03-19 | 2007-02-06 | Samsung Electronics Co., Ltd. | Thin film transistor array panel and manufacturing method thereof |
JP4494061B2 (ja) | 2004-03-30 | 2010-06-30 | 東京応化工業株式会社 | ポジ型レジスト組成物 |
KR100569220B1 (ko) | 2004-04-06 | 2006-04-10 | 한국과학기술원 | 플라즈마 디스플레이 패널용 유전체 조성물 |
US7067841B2 (en) | 2004-04-22 | 2006-06-27 | E. I. Du Pont De Nemours And Company | Organic electronic devices |
US7177000B2 (en) | 2004-05-18 | 2007-02-13 | Automotive Systems Laboratory, Inc. | Liquid crystal display cell structure and manufacture process of a liquid crystal display comprising an opening formed through the color filter and partially the buffer layer |
CN100503756C (zh) | 2004-05-18 | 2009-06-24 | 罗姆及海斯电子材料有限公司 | 与上涂光致抗蚀剂一起使用的涂料组合物 |
US7153783B2 (en) | 2004-07-07 | 2006-12-26 | Honeywell International Inc. | Materials with enhanced properties for shallow trench isolation/premetal dielectric applications |
KR101275635B1 (ko) | 2004-07-16 | 2013-06-14 | 다우 코닝 코포레이션 | 방사선 민감성 실리콘 수지 조성물 |
US20080157065A1 (en) | 2004-08-03 | 2008-07-03 | Ahila Krishnamoorthy | Compositions, layers and films for optoelectronic devices, methods of production and uses thereof |
US7015061B2 (en) | 2004-08-03 | 2006-03-21 | Honeywell International Inc. | Low temperature curable materials for optical applications |
JP2006045352A (ja) | 2004-08-04 | 2006-02-16 | Hitachi Chem Co Ltd | シリカ系被膜形成用組成物、シリカ系被膜及びその形成方法並びにシリカ系被膜を備える電子部品 |
KR20060020830A (ko) | 2004-09-01 | 2006-03-07 | 삼성코닝 주식회사 | 계면활성제를 템플릿으로 이용한 저유전성 메조포러스박막의 제조방법 |
US20060047034A1 (en) | 2004-09-02 | 2006-03-02 | Haruaki Sakurai | Composition for forming silica-based film, method of forming silica-based film, and electronic component provided with silica-based film |
KR100699996B1 (ko) | 2004-09-02 | 2007-03-26 | 삼성에스디아이 주식회사 | 회로 측정용 패드를 포함하는 유기전계발광표시장치와 그제조방법 |
JP2005042118A (ja) | 2004-09-07 | 2005-02-17 | Hitachi Chem Co Ltd | シリカ系被膜形成用組成物、シリカ系被膜の製造方法及び電子部品 |
JP5143334B2 (ja) | 2004-09-07 | 2013-02-13 | 日立化成工業株式会社 | シリカ系被膜形成用組成物、シリカ系被膜及びその形成方法、並びにシリカ系被膜を備える電子部品 |
KR101083228B1 (ko) | 2004-10-07 | 2011-11-11 | 삼성코닝정밀소재 주식회사 | 칼릭스 아렌 유도체를 포함하는 나노 기공을 갖는 물질을형성하기 위한 조성물 |
DE102004049413A1 (de) | 2004-10-08 | 2006-04-13 | Volkswagen Ag | Verfahren zur Beschichtung von metallischen Oberflächen |
JP2005105282A (ja) | 2004-10-15 | 2005-04-21 | Hitachi Chem Co Ltd | シリカ系被膜形成用組成物、シリカ系被膜及びその形成方法、並びにシリカ系被膜を備える電子部品 |
JP2005105281A (ja) | 2004-10-15 | 2005-04-21 | Hitachi Chem Co Ltd | シリカ系被膜形成用組成物、シリカ系被膜及びその形成方法、並びにシリカ系被膜を備える電子部品 |
JP2005105283A (ja) | 2004-10-27 | 2005-04-21 | Hitachi Chem Co Ltd | シリカ系被膜形成用組成物、シリカ系被膜及びその形成方法、並びにシリカ系被膜を備える電子部品 |
JP2005072615A (ja) | 2004-10-29 | 2005-03-17 | Hitachi Chem Co Ltd | シリカ系被膜形成用組成物、シリカ系被膜、シリカ系被膜の製造方法及び電子部品 |
JP2005105284A (ja) | 2004-10-29 | 2005-04-21 | Hitachi Chem Co Ltd | シリカ系被膜形成用組成物、シリカ系被膜、シリカ系被膜の製造方法及び電子部品 |
CN101052919B (zh) | 2004-11-01 | 2011-05-25 | 日产化学工业株式会社 | 含磺酸酯的形成光刻用防反射膜的组合物 |
KR20060039628A (ko) | 2004-11-03 | 2006-05-09 | 삼성코닝 주식회사 | 용매확산이 억제된 저유전 다공성 박막 |
JP5143335B2 (ja) | 2004-11-12 | 2013-02-13 | 日立化成工業株式会社 | シリカ系被膜形成用組成物、シリカ系被膜及びその形成方法、並びにシリカ系被膜を備える電子部品 |
JP2005136429A (ja) | 2004-11-12 | 2005-05-26 | Hitachi Chem Co Ltd | シリカ系被膜形成用組成物、シリカ系被膜及びその形成方法、並びにシリカ系被膜を備える電子部品 |
US20060255315A1 (en) | 2004-11-19 | 2006-11-16 | Yellowaga Deborah L | Selective removal chemistries for semiconductor applications, methods of production and uses thereof |
JP2006183029A (ja) | 2004-11-30 | 2006-07-13 | Hitachi Chem Co Ltd | シリカ系被膜形成用組成物、シリカ系被膜の形成方法、シリカ系被膜、及び、電子部品 |
JP2006183028A (ja) | 2004-11-30 | 2006-07-13 | Hitachi Chem Co Ltd | シリカ系被膜形成用組成物、シリカ系被膜の形成方法、シリカ系被膜、及び、電子部品 |
KR101067596B1 (ko) | 2004-12-01 | 2011-09-27 | 삼성코닝정밀소재 주식회사 | 저유전 다공성 박막의 제조방법 |
KR20060068348A (ko) | 2004-12-16 | 2006-06-21 | 삼성코닝 주식회사 | 실록산계 중합체 및 상기 중합체를 이용한 절연막 제조방법 |
US20060132459A1 (en) | 2004-12-20 | 2006-06-22 | Huddleston Wyatt A | Interpreting an image |
JP2006213908A (ja) | 2004-12-21 | 2006-08-17 | Hitachi Chem Co Ltd | シリカ系被膜形成用組成物、シリカ系被膜の形成方法、シリカ系被膜、及び、電子部品 |
US20080260956A1 (en) | 2004-12-21 | 2008-10-23 | Haruaki Sakurai | Film, Silica Film and Method of Forming the Same, Composition for Forming Silica Film, and Electronic Part |
DE602005011393D1 (de) | 2004-12-22 | 2009-01-15 | Rohm & Haas Elect Mat | Optische Trockenfilme und Verfahren zur Herstellung optischer Vorrichtungen mit Trockenfilmen |
DE602005011394D1 (de) | 2004-12-22 | 2009-01-15 | Rohm & Haas Elect Mat | Optische Trockenfilme und Verfahren zur Herstellung optischer Vorrichtungen mit Trockenfilmen |
JP4021438B2 (ja) | 2004-12-22 | 2007-12-12 | クラリオン株式会社 | デジタル信号処理方式 |
EP1674905B1 (en) | 2004-12-22 | 2008-10-15 | Rohm and Haas Electronic Materials, L.L.C. | Methods of forming optical devices having polymeric layers |
JP2006182811A (ja) | 2004-12-24 | 2006-07-13 | Tokyo Ohka Kogyo Co Ltd | シリカ系被膜形成用塗布液 |
US7374812B2 (en) | 2004-12-30 | 2008-05-20 | 3M Innovative Properties Company | Low refractive index coating composition for use in antireflection polymer film coatings and manufacturing method |
KR101202955B1 (ko) | 2004-12-31 | 2012-11-19 | 삼성코닝정밀소재 주식회사 | 다공성 나노 입자를 포함하는 저유전 박막 형성용 조성물및 이를 이용한 저유전 박막의 제조방법 |
US20060155594A1 (en) | 2005-01-13 | 2006-07-13 | Jess Almeida | Adaptive step-by-step process with guided conversation logs for improving the quality of transaction data |
KR101119141B1 (ko) | 2005-01-20 | 2012-03-19 | 삼성코닝정밀소재 주식회사 | 폴리머 나노 입자를 포함하는 저유전 박막 형성용 조성물및 이를 이용한 저유전 박막의 제조방법 |
JP4775543B2 (ja) | 2005-01-24 | 2011-09-21 | 信越化学工業株式会社 | オルガノシリコーンレジンエマルジョン組成物及びその製造方法、ならびに該組成物の被膜が形成された物品 |
KR101139157B1 (ko) | 2005-02-07 | 2012-04-26 | 삼성전자주식회사 | 단일종의 입체이성질체 만으로 된 실록산 단량체 또는이의 실록산 중합체를 포함하는 저유전 박막 형성용조성물 및 이들을 이용한 저유전 박막의 제조방법 |
KR20060090483A (ko) | 2005-02-07 | 2006-08-11 | 삼성코닝 주식회사 | 풀러렌을 포함하는 저유전 박막 형성용 조성물, 이를이용한 저유전 박막 및 저유전 박막의 제조방법 |
JP4513966B2 (ja) | 2005-03-07 | 2010-07-28 | 信越化学工業株式会社 | プライマー組成物及びそれを用いた電気電子部品 |
JP2006249181A (ja) | 2005-03-09 | 2006-09-21 | Fuji Photo Film Co Ltd | 絶縁材料形成用組成物の製造方法、絶縁材料形成用組成物およびこれを用いた絶縁膜 |
TWI338816B (en) | 2005-03-11 | 2011-03-11 | Shinetsu Chemical Co | Photoresist undercoat-forming material and patterning process |
JP4725160B2 (ja) | 2005-03-30 | 2011-07-13 | 東レ株式会社 | 感光性シロキサン組成物、それから形成された硬化膜、および硬化膜を有する素子 |
WO2006128232A1 (en) | 2005-05-31 | 2006-12-07 | Xerocoat Pty Ltd | Control of morphology of silica films |
KR101289809B1 (ko) | 2005-06-13 | 2013-07-29 | 질렉스 오와이 | 탄화수소 기를 브릿징으로 작용기화된 실란 모노머를중합하는 것을 포함하는 반도체 광학장치를 위한 폴리머를제조하는 방법 |
KR20060134304A (ko) | 2005-06-22 | 2006-12-28 | 삼성전자주식회사 | 액정 표시 장치 |
US20070004587A1 (en) | 2005-06-30 | 2007-01-04 | Intel Corporation | Method of forming metal on a substrate using a Ruthenium-based catalyst |
US7326442B2 (en) | 2005-07-14 | 2008-02-05 | International Business Machines Corporation | Antireflective composition and process of making a lithographic structure |
KR20070010618A (ko) | 2005-07-19 | 2007-01-24 | 삼성전자주식회사 | 표시 장치 및 박막 트랜지스터 표시판 |
JP4677937B2 (ja) | 2005-07-20 | 2011-04-27 | セイコーエプソン株式会社 | 膜パターンの形成方法、デバイス、電気光学装置、電子機器、及びアクティブマトリクス基板の製造方法 |
KR101209046B1 (ko) | 2005-07-27 | 2012-12-06 | 삼성디스플레이 주식회사 | 박막트랜지스터 기판과 박막트랜지스터 기판의 제조방법 |
KR20070014281A (ko) | 2005-07-28 | 2007-02-01 | 삼성전자주식회사 | 액정 표시 장치 |
US20070023864A1 (en) | 2005-07-28 | 2007-02-01 | International Business Machines Corporation | Methods of fabricating bipolar transistor for improved isolation, passivation and critical dimension control |
KR20070014579A (ko) | 2005-07-29 | 2007-02-01 | 삼성전자주식회사 | 유기 박막 트랜지스터 표시판 및 그 제조 방법 |
KR20070015314A (ko) | 2005-07-30 | 2007-02-02 | 삼성전자주식회사 | 액정표시장치 및 그의 제조 방법 |
KR100683791B1 (ko) | 2005-07-30 | 2007-02-20 | 삼성에스디아이 주식회사 | 박막 트랜지스터 기판 및 이를 구비한 평판 디스플레이장치 |
JP4039446B2 (ja) | 2005-08-02 | 2008-01-30 | エプソンイメージングデバイス株式会社 | 電気光学装置及び電子機器 |
KR101237011B1 (ko) | 2005-08-02 | 2013-02-26 | 삼성디스플레이 주식회사 | 액정 표시 장치 |
KR101247698B1 (ko) | 2005-08-05 | 2013-03-26 | 삼성디스플레이 주식회사 | 액정 표시 장치 |
US20070030428A1 (en) | 2005-08-05 | 2007-02-08 | Samsung Electronics Co., Ltd. | Liquid crystal display |
KR101240644B1 (ko) | 2005-08-09 | 2013-03-11 | 삼성디스플레이 주식회사 | 박막 트랜지스터 표시판 |
KR20070019457A (ko) | 2005-08-12 | 2007-02-15 | 삼성전자주식회사 | 박막 트랜지스터 표시판 및 이를 포함하는 액정표시장치 |
TWI340607B (en) | 2005-08-12 | 2011-04-11 | Au Optronics Corp | Organic electroluminescent display panel and fabricating method thereof |
JP4563894B2 (ja) | 2005-08-19 | 2010-10-13 | 富士通株式会社 | シリカ系被膜の製造方法および半導体装置の製造方法 |
US20070134435A1 (en) | 2005-12-13 | 2007-06-14 | Ahn Sang H | Method to improve the ashing/wet etch damage resistance and integration stability of low dielectric constant films |
EP1973963B1 (en) | 2006-01-17 | 2013-06-19 | Dow Corning Corporation | Thermally stable transparent silicone resin compositions and methods for their preparation and use |
US20070197727A1 (en) | 2006-02-16 | 2007-08-23 | Laura Ann Lewin | Multi component coating composition |
US8258502B2 (en) | 2006-02-24 | 2012-09-04 | Dow Corning Corporation | Light emitting device encapsulated with silicones and curable silicone compositions for preparing the silicones |
JP2007254677A (ja) | 2006-03-24 | 2007-10-04 | Tokyo Ohka Kogyo Co Ltd | シリカ系被膜形成用組成物およびシリカ系被膜 |
US7855043B2 (en) | 2006-06-16 | 2010-12-21 | Shin-Etsu Chemical Co., Ltd. | Silicon-containing film-forming composition, silicon-containing film, silicon-containing film-bearing substrate, and patterning method |
JP5202822B2 (ja) | 2006-06-23 | 2013-06-05 | 東レ・ダウコーニング株式会社 | 硬化性オルガノポリシロキサン組成物および半導体装置 |
JP2008033016A (ja) | 2006-07-28 | 2008-02-14 | Tokyo Ohka Kogyo Co Ltd | 多層レジスト用ポジ型レジスト組成物及びこれを用いたパターン形成方法 |
US20080032052A1 (en) | 2006-08-04 | 2008-02-07 | Kostantinos Kourtakis | Low refractive index composition |
US8158981B2 (en) | 2006-09-25 | 2012-04-17 | Hitachi Chemical Company, Ltd. | Radiation-sensitive composition, method of forming silica-based coating film, silica-based coating film, apparatus and member having silica-based coating film and photosensitizing agent for insulating film |
US20080185041A1 (en) | 2007-02-02 | 2008-08-07 | Guardian Industries Corp. | Method of making a photovoltaic device with antireflective coating containing porous silica and resulting product |
US7915353B2 (en) | 2007-02-02 | 2011-03-29 | Samsung Electronics Co., Ltd. | Silica nanocomposite, method of preparing the silica nanocomposite, composite foam and method of preparing the composite foam |
US8026040B2 (en) * | 2007-02-20 | 2011-09-27 | Az Electronic Materials Usa Corp. | Silicone coating composition |
US8642246B2 (en) | 2007-02-26 | 2014-02-04 | Honeywell International Inc. | Compositions, coatings and films for tri-layer patterning applications and methods of preparation thereof |
KR100845403B1 (ko) | 2007-04-16 | 2008-07-10 | 유창국 | 유/무기 하이브리드 코팅제 및 그 제조방법과 열경화방법 |
KR101562681B1 (ko) | 2007-06-15 | 2015-10-22 | 에스비에이 머티어리얼스 인코포레이티드 | 저유전율 유전체 |
US8652750B2 (en) | 2007-07-04 | 2014-02-18 | Shin-Etsu Chemical Co., Ltd. | Silicon-containing film-forming composition, silicon-containing film, silicon-containing film-bearing substrate, and patterning method |
US7931940B2 (en) | 2007-08-28 | 2011-04-26 | Hoya Corporation | Production method of silica aerogel film, anti-reflection coating and optical element |
JP5218411B2 (ja) | 2007-09-06 | 2013-06-26 | コニカミノルタアドバンストレイヤー株式会社 | 光学フィルム、偏光板及び液晶表示装置 |
US20100130348A1 (en) | 2007-09-21 | 2010-05-27 | Chul-Hyun Kang | Photocatalytic composition for anti-reflection and the glass substrate coated with the composition |
US20090101203A1 (en) | 2007-10-23 | 2009-04-23 | Guardian Industries Corp. | Method of making an antireflective silica coating, resulting product, and photovoltaic device comprising same |
EP2209839A1 (en) | 2007-11-06 | 2010-07-28 | Braggone OY | Carbosilane polymer compositions for anti-reflective coatings |
WO2009108574A2 (en) | 2008-02-25 | 2009-09-03 | Honeywell International Inc. | Processable inorganic and organic polymer formulations, methods of production and uses thereof |
TWI482827B (zh) | 2008-04-16 | 2015-05-01 | Eternal Materials Co Ltd | 塗料組成物及其用途 |
JP5667740B2 (ja) | 2008-06-18 | 2015-02-12 | 東レ・ダウコーニング株式会社 | 硬化性オルガノポリシロキサン組成物及び半導体装置 |
KR101113037B1 (ko) | 2008-07-15 | 2012-02-27 | 주식회사 엘지화학 | 포지티브형 감광성 수지 조성물 |
CN102084301B (zh) | 2008-07-24 | 2013-08-28 | 日产化学工业株式会社 | 涂布组合物和图案形成方法 |
CN102143990B (zh) | 2008-09-02 | 2014-04-02 | 第一毛织株式会社 | 用于填充半导体装置内小间隙的化合物、包含该化合物的组合物及制造半导体电容器的方法 |
US8092905B2 (en) | 2008-10-10 | 2012-01-10 | E.I Du Pont De Nemours And Company | Compositions containing multifunctional nanoparticles |
US20150041959A1 (en) | 2008-12-17 | 2015-02-12 | Samsung Sdi Co., Ltd. | Hardmask composition for forming resist underlayer film, process for producing a semiconductor integrated circuit device, and semiconductor integrated circuit device |
KR101288572B1 (ko) | 2008-12-17 | 2013-07-22 | 제일모직주식회사 | 보관안정성이 우수한 레지스트 하층막용 하드마스크 조성물 |
US9073782B2 (en) | 2009-01-12 | 2015-07-07 | Cleansun Energy Ltd. | Substrate having a self cleaning anti-reflecting coating and method for its preparation |
US8728710B2 (en) | 2009-03-31 | 2014-05-20 | Sam Xunyun Sun | Photo-imageable hardmask with dual tones for microphotolithography |
US20100255412A1 (en) | 2009-04-06 | 2010-10-07 | Sam Xunyun Sun | Photo-imaging Hardmask with Negative Tone for Microphotolithography |
US8911932B2 (en) | 2009-04-13 | 2014-12-16 | Sam Xunyun Sun | Photo-imageable hardmask with positive tone for microphotolithography |
US20110017144A1 (en) * | 2009-07-22 | 2011-01-27 | Calinski Michael D | Marine Nursery Habitat |
JP2011132416A (ja) | 2009-12-25 | 2011-07-07 | Nagase Chemtex Corp | 熱硬化性樹脂組成物及び有機無機複合樹脂 |
JP5617476B2 (ja) | 2010-09-22 | 2014-11-05 | Jsr株式会社 | シロキサンポリマー組成物、硬化膜及び硬化膜の形成方法 |
KR20140024244A (ko) | 2010-11-02 | 2014-02-28 | 헨켈 차이나 컴퍼니 리미티드 | 히드로실리콘 수지 및 이의 제조 방법 |
JP2012097225A (ja) * | 2010-11-04 | 2012-05-24 | Daicel Corp | 硬化性樹脂組成物及び硬化物 |
US20120196225A1 (en) | 2011-01-27 | 2012-08-02 | Namitek Specialty Materials Corp. | Photo Patternable Coating Compositions of Silicones and Organic-Inorganic Hybrids |
US20120237676A1 (en) | 2011-03-14 | 2012-09-20 | Intermolecular, Inc. | Sol-gel based formulations and methods for preparation of hydrophobic ultra low refractive index anti-reflective coatings on glass |
JP5863266B2 (ja) | 2011-04-12 | 2016-02-16 | メルクパフォーマンスマテリアルズIp合同会社 | シロキサン樹脂含有塗布組成物 |
JP5674610B2 (ja) | 2011-09-21 | 2015-02-25 | 日東電工株式会社 | シリコーン樹脂シート、その製造方法、封止シートおよび発光ダイオード装置 |
US9011591B2 (en) * | 2011-09-21 | 2015-04-21 | Dow Global Technologies Llc | Compositions and antireflective coatings for photolithography |
KR20130042867A (ko) | 2011-10-19 | 2013-04-29 | 삼성디스플레이 주식회사 | 보호막 용액 조성물, 박막 트랜지스터 표시판 및 박막 트랜지스터 표시판 제조 방법 |
US8894877B2 (en) | 2011-10-19 | 2014-11-25 | Lam Research Ag | Method, apparatus and composition for wet etching |
KR101560038B1 (ko) | 2011-11-25 | 2015-10-15 | 주식회사 엘지화학 | 경화성 조성물 |
US9068086B2 (en) * | 2011-12-21 | 2015-06-30 | Dow Global Technologies Llc | Compositions for antireflective coatings |
US8871425B2 (en) | 2012-02-09 | 2014-10-28 | Az Electronic Materials (Luxembourg) S.A.R.L. | Low dielectric photoimageable compositions and electronic devices made therefrom |
US8961918B2 (en) | 2012-02-10 | 2015-02-24 | Rohm And Haas Electronic Materials Llc | Thermal annealing process |
JP6079263B2 (ja) | 2012-03-07 | 2017-02-15 | Jsr株式会社 | レジスト下層膜形成用組成物及びパターン形成方法 |
JP6167588B2 (ja) | 2012-03-29 | 2017-07-26 | Jsr株式会社 | レジスト下層膜形成用組成物及びパターン形成方法 |
CN107966879B (zh) | 2012-04-23 | 2021-06-01 | 日产化学工业株式会社 | 含有添加剂的含硅极紫外抗蚀剂下层膜形成用组合物 |
CN104321378B (zh) | 2012-05-10 | 2016-09-07 | 埃克森美孚化学专利公司 | 组合物及其制备方法 |
DE112012006554B4 (de) | 2012-06-19 | 2023-07-20 | Dow Global Technologies Llc | Hoch mischbare polymerblends, filme, folien, fasern und beschichtete gegenstände enthaltend dieselben, verfahren zur herstellung optischer folien enthaltend dieselben; polarisationsplatten enthaltend die optischen folien und flüssigkristallanzeigevorrichtungen enthaltend die polarisatoren |
JP6047578B2 (ja) | 2012-09-05 | 2016-12-21 | 信越ポリマー株式会社 | 帯電防止性剥離剤及び帯電防止性剥離フィルム |
CN104981911B (zh) | 2012-10-15 | 2017-12-22 | 陶氏环球技术有限责任公司 | 传导组合物 |
KR102153246B1 (ko) | 2012-10-30 | 2020-09-07 | 레르 리키드 쏘시에떼 아노님 뿌르 레드 에렉스뿔라따시옹 데 프로세데 조르즈 클로드 | 규소-함유 필름의 에칭을 위한 방법 및 에칭 가스 |
CN105263990B (zh) | 2013-03-14 | 2019-04-23 | 莫门蒂夫性能材料股份有限公司 | 高折射率硅氧烷 |
US9449797B2 (en) | 2013-05-07 | 2016-09-20 | Lam Research Corporation | Component of a plasma processing apparatus having a protective in situ formed layer on a plasma exposed surface |
KR101492251B1 (ko) | 2013-05-31 | 2015-02-16 | 이근수 | 개질된 폴리실록산계 공중합체, 이 공중합체를 포함하는 코팅 조성물, 이를 이용하여 얻을 수 있는 코팅 플라스틱 기판과 이의 제조 방법, 및 상기 개질된 폴리실록산계 공중합체의 제조방법 |
CN104419237A (zh) | 2013-08-22 | 2015-03-18 | 3M创新有限公司 | 防腐液、防腐件及其制备方法 |
DE102013218134A1 (de) | 2013-09-11 | 2015-03-12 | Evonik Industries Ag | Beschichtungsmittel enthaltend Polysiloxan-Quats |
JP6237279B2 (ja) | 2014-01-31 | 2017-11-29 | 国立大学法人 奈良先端科学技術大学院大学 | 保護膜を具備する薄膜トランジスタ基板およびその製造方法 |
US10030170B2 (en) | 2014-02-24 | 2018-07-24 | Xerox Corporation | Wear resistant transparent coating |
KR102363819B1 (ko) | 2014-02-28 | 2022-02-17 | 주식회사 동진쎄미켐 | 실세스퀴옥산 복합 고분자 및 이의 제조방법 |
US9399720B2 (en) | 2014-07-14 | 2016-07-26 | Enki Technology, Inc. | High gain durable anti-reflective coating |
CN104177619B (zh) | 2014-08-04 | 2017-05-31 | 深圳市明粤科技有限公司 | Led封装用核壳结构的有机硅树脂合成方法 |
CN104262628B (zh) | 2014-09-28 | 2016-08-24 | 吉林大学 | 主链含线型和笼型的有机硅氧烷聚醚砜树脂及其制备方法 |
US9738765B2 (en) | 2015-02-19 | 2017-08-22 | International Business Machines Corporation | Hybrid topographical and chemical pre-patterns for directed self-assembly of block copolymers |
JP2015155541A (ja) | 2015-02-25 | 2015-08-27 | 国立大学法人 熊本大学 | シロキサンポリマー架橋硬化物 |
US20170260419A1 (en) | 2016-03-14 | 2017-09-14 | Honeywell International Inc. | Polysiloxane formulations and coatings for optoelectronic applications, methods of production, and uses thereof |
-
2016
- 2016-03-02 EP EP16780418.6A patent/EP3194502A4/en active Pending
- 2016-03-02 US US15/522,419 patent/US10544329B2/en active Active
- 2016-03-02 WO PCT/US2016/020373 patent/WO2016167892A1/en active Application Filing
- 2016-03-02 JP JP2017536545A patent/JP6803842B2/ja active Active
- 2016-03-04 CN CN201610344848.5A patent/CN106065278B/zh active Active
- 2016-03-04 KR KR1020160026610A patent/KR102595033B1/ko active IP Right Grant
- 2016-03-04 TW TW105106778A patent/TWI716384B/zh active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010532792A (ja) * | 2007-04-10 | 2010-10-14 | ハネウェル・インターナショナル・インコーポレーテッド | オプトエレクトロニクスデバイス用の組成物、層、及びフィルム、並びにこれらの使用 |
WO2011162294A1 (ja) * | 2010-06-24 | 2011-12-29 | 積水化学工業株式会社 | 光半導体装置用封止剤及びそれを用いた光半導体装置 |
JP2012222202A (ja) * | 2011-04-11 | 2012-11-12 | Sekisui Chem Co Ltd | 光半導体装置用ダイボンド材及びそれを用いた光半導体装置 |
JP2013137512A (ja) * | 2011-11-29 | 2013-07-11 | Shin Etsu Chem Co Ltd | ケイ素含有レジスト下層膜形成用組成物及びパターン形成方法 |
JP2013167669A (ja) * | 2012-02-14 | 2013-08-29 | Shin Etsu Chem Co Ltd | ケイ素含有表面改質剤、これを含むレジスト下層膜形成用組成物、及びパターン形成方法 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2020096168A (ja) * | 2018-09-21 | 2020-06-18 | 日産化学株式会社 | 固体撮像素子用平坦化膜形成樹脂組成物 |
JP7319588B2 (ja) | 2018-09-21 | 2023-08-02 | 日産化学株式会社 | 固体撮像素子用平坦化膜形成樹脂組成物 |
KR20230154957A (ko) | 2021-03-25 | 2023-11-09 | 가부시키가이샤 닛폰 쇼쿠바이 | 폴리실세스퀴옥산 조성물, 및, 경화물 |
Also Published As
Publication number | Publication date |
---|---|
KR20160122056A (ko) | 2016-10-21 |
CN106065278B (zh) | 2021-08-10 |
WO2016167892A1 (en) | 2016-10-20 |
TWI716384B (zh) | 2021-01-21 |
US20180022957A1 (en) | 2018-01-25 |
JP6803842B2 (ja) | 2020-12-23 |
EP3194502A4 (en) | 2018-05-16 |
KR102595033B1 (ko) | 2023-10-26 |
EP3194502A1 (en) | 2017-07-26 |
US10544329B2 (en) | 2020-01-28 |
TW201704346A (zh) | 2017-02-01 |
CN106065278A (zh) | 2016-11-02 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR101203225B1 (ko) | 막 형성용 조성물, 막 형성용 조성물의 제조 방법, 절연막형성용 재료, 막의 형성 방법 및 실리카계 막 | |
WO2008124711A1 (en) | Compositions, layers and films for optoelectronic devices, methods of production and uses thereof | |
US20070054136A1 (en) | Film forming composition, insulating film and production process of the insulating film | |
US20110077364A1 (en) | Composition containing silicon-containing polymer, cured product of the composition, silicon-containing polymer, and method of producing the silicon-containing polymer | |
KR20060053974A (ko) | 실리카계 막 및 그의 형성 방법, 반도체 장치의 절연막형성용 조성물, 및 배선 구조체 및 반도체 장치 | |
JP2007070520A (ja) | 膜形成用組成物、絶縁膜およびその製造方法 | |
US20110223329A1 (en) | Films and method of production thereof | |
JP6803842B2 (ja) | オプトエレクトロニクス用途のためのポリシロキサン製剤及びコーティング | |
TWI794370B (zh) | 抗裂的基於矽之平坦化組成物、方法及膜 | |
JP2002129103A (ja) | 膜形成用組成物および絶縁膜形成用材料 | |
JP4697363B2 (ja) | 膜形成用組成物および絶縁膜形成用材料 | |
JP4996832B2 (ja) | シリカ系コーティング剤、それを用いたシリカ系薄膜および構造体 | |
JP2006183029A (ja) | シリカ系被膜形成用組成物、シリカ系被膜の形成方法、シリカ系被膜、及び、電子部品 | |
TWI283254B (en) | Film-forming composition containing carbosilane-based polymer and film obtained from the same | |
JP2002167438A (ja) | ケイ素ポリマー、膜形成用組成物および絶縁膜形成用材料 | |
JP2002097414A (ja) | 膜形成用組成物および絶縁膜形成用材料 | |
JP2006183028A (ja) | シリカ系被膜形成用組成物、シリカ系被膜の形成方法、シリカ系被膜、及び、電子部品 | |
TWI824039B (zh) | 聚矽氧烷組成物及二氧化矽質膜之製造方法 | |
TWI798312B (zh) | 抗裂性聚矽氧烷介電平面化組成物、方法、及膜 | |
JP2006183027A (ja) | シリカ系被膜形成用組成物、シリカ系被膜の形成方法、シリカ系被膜、及び、電子部品 | |
JP2006241304A (ja) | 膜形成用組成物、絶縁膜およびその製造方法 | |
WO2019082803A1 (ja) | 樹脂組成物、その硬化膜、それを具備する半導体素子および半導体素子の製造方法 | |
JP2015147376A (ja) | ガラス複合体 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20190201 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20190201 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20200110 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20200116 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20200403 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20200708 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20200918 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20201026 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20201106 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20201201 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6803842 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |