WO2001024244A1 - High etch selectivity etchant for doped silicate glass - Google Patents
High etch selectivity etchant for doped silicate glass Download PDFInfo
- Publication number
- WO2001024244A1 WO2001024244A1 PCT/US2000/025481 US0025481W WO0124244A1 WO 2001024244 A1 WO2001024244 A1 WO 2001024244A1 US 0025481 W US0025481 W US 0025481W WO 0124244 A1 WO0124244 A1 WO 0124244A1
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- WO
- WIPO (PCT)
- Prior art keywords
- etchant
- water content
- volume
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- silicate glass
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Links
- 239000005368 silicate glass Substances 0.000 title claims description 24
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 27
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims abstract description 19
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims abstract description 18
- 239000002210 silicon-based material Substances 0.000 claims abstract description 15
- 238000005530 etching Methods 0.000 claims abstract description 4
- 239000000463 material Substances 0.000 claims description 24
- 239000002019 doping agent Substances 0.000 claims description 10
- 238000000034 method Methods 0.000 claims description 7
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 229910052796 boron Inorganic materials 0.000 claims description 6
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 5
- 239000000758 substrate Substances 0.000 claims description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 4
- 229920005591 polysilicon Polymers 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 2
- 238000001039 wet etching Methods 0.000 claims 1
- 239000005388 borosilicate glass Substances 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 239000005380 borophosphosilicate glass Substances 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 239000005360 phosphosilicate glass Substances 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000005389 semiconductor device fabrication Methods 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical class [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- -1 silicon nitrides Chemical class 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
- H01L21/02129—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being boron or phosphorus doped silicon oxides, e.g. BPSG, BSG or PSG
Definitions
- the invention generally relates to semiconductor device fabrication and, more particularly, to providing highly selective etching of silicon based oxides.
- device layers of insulating, semiconducting, and conducting materials are formed on a substrate.
- the layers are patterned to create features and spaces .
- the features and spaces are patterned so as to form devices, such as transistors, capacitors, and resistors. These devices are then interconnected to achieve a desired electrical function, creating an integrated circuit (IC) .
- IC integrated circuit
- Etch selectivity is defined as the ratio of etch rates between a first material that is to be etched with respect to a second material.
- silicon-based materials such as silicon-base d oxides are generally employed as, for example, dielectric layers, masks for etch processes as well as etch stop and polish stop layers.
- Conventional wet etch processes employs a fluoride-based etchant to etch silicon-based materials. Such etchants produce an etch selectivity of less than 15:1.
- the invention relates to a highly selective etching of silicon-based materials.
- an etchant comprising sulfuric acid and hydrofluoric acid having a low water content is used for to etch a doped silicate glass with a high selectivity to silicon-based materials such as silicon oxides, silicon nitrides, silicate glass, or polysilicon.
- the water content of the etchant is less than 20% by volume.
- the invention relates generally to semiconductor fabrication and particularly to an etchant that provides a high etch selectivity of a first material to a second material on a substrate such as a semiconductor wafer.
- the first and second materials are silicon-based materials.
- the silicon-based materials can be formed by techniques such as thermal oxidation, chemical vapor deposition (CVD) , or a combination of thermal oxidation and CVD.
- the first material comprises a doped silicate glass.
- Dopants such as boron, phosphorus, or arsenic, are useful to dope the silicate glass.
- the doped silicate glass comprises, for example boron such as borosilicate glass (BSG) .
- BSG borosilicate glass
- Other types of doped silicate glass such as phosphosilicate glass (PSG) are also useful.
- a doped silicate glass comprising more than one type of dopant, such as borophosphosilicate glass (BPSG) is also useful.
- BPSG borophosphosilicate glass
- BPSG borophosphosilicate glass
- the second silicon-based material comprises silicon oxide, silicon nitride, undoped silicate glass or polysilicon.
- the polysilicon can be doped or undoped.
- the second silicon-based material comprises silicon oxide.
- the silicon-based oxide is formed by thermal oxidation.
- the etch system etches the doped silicate glass with an etch selectivity to the silicon oxide of greater than about 15:1, preferably greater than about 40:1, more preferably greater than about 70:1, and even more preferably greater than about 100:1.
- the etchant comprises sulfuric acid and hydrofluoric acid having a low water content to produce a high etch selectivity between silicon-based materials.
- the etch system comprises a water content of less than about 20% by volume, preferably less than about 15% by volume, more preferably less than about 10% by volume, and even more preferably less than about 5% by volume .
- the high etch selectivity can be achieved using a wide range of mixing ratio of concentrated sulfuric acid and concentrated hydrofluoric acid.
- the ratio of the acids affect the etch rate.
- a higher ratio of sulfuric acid causes the etchant to etch at a lower etch rate and vice-versa.
- the etchant retains its high etch selectivity characteristics.
- the etchant comprises sulfuric acid and hydrofluoric acid in a ratio of about 5:1 to about 20:1 by volume. A ratio of greater than 20:1 can also be useful if lower etch rates are desired.
- the substrate is exposed to the etchant using wet etch tools, such as a bath, a spray tool or a spintech tool .
- the etchant exhibits high etch selectivity characteristics over a wide range of temperatures.
- the etchant can be used at temperatures ranging from below room temperature to above 80°C with a high etch selectivity.
- the temperature does affect the etch rates of the materials.
- the temperature of the etch can be chosen to produce the desired etch rates on the materials while still retaining the desired high etch selectivity property.
- the etch rate of the doped silicate glass can be controlled by changing the concentration of the dopants. In particular, the etch rate can be increased or decreased by increasing or decreasing the dopant concentration, respectively, in the doped silicate glass.
- the doped silicate glass comprises a dopant concentration of at least 3 wt%. A dopant concentration of about 3 - 3.5 wt% has been found to produce an etch selectivity to silicon oxide of about 45:1. Increasing the dopant concentration of the doped silicate glass to above 5 wt% produces an etch selectivity to silicon oxide of greater than about 70:1.
- the BSG comprises a concentration of B of at least 3 wt%, preferably greater than about 5 wt%.
- An etchant comprising a mixture of 5 parts sulfuric acid (96%) and 1 part hydrofluoric acid (49%) was used to etch a BSG layer comprising 5 wt% B and a thermal oxide layer.
- the etchant yielded an etch rate of about 720 nm/min for the BSG layer and only 14 nm/min for the thermal oxide layer, resulting in an etch selectivity of the BSG to the thermal oxide of about 51:1.
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Surface Treatment Of Glass (AREA)
Abstract
An etchant for highly selective etching of silicon-based materials. The etchant comprises sulfuric acid and hydrofluoric acid with low water content.
Description
HIGH ETCH SELECTIVITY ETCHANT FOR DOPED SILICATE GLASS
Field Of Invention
The invention generally relates to semiconductor device fabrication and, more particularly, to providing highly selective etching of silicon based oxides.
Background Of Invention
In device fabrication, device layers of insulating, semiconducting, and conducting materials are formed on a substrate. The layers are patterned to create features and spaces . The features and spaces are patterned so as to form devices, such as transistors, capacitors, and resistors. These devices are then interconnected to achieve a desired electrical function, creating an integrated circuit (IC) .
The ability to selectively etch or remove specific layers without attacking others facilitates patterning of the device layers. Etch selectivity is defined as the ratio of etch rates between a first material that is to be etched with respect to a second material. Of particular interest is the selectivity of silicon-based materials. Silicon-based materials such as silicon-based oxides are generally employed as, for example, dielectric layers, masks for etch processes as well as etch stop and
polish stop layers. Conventional wet etch processes employs a fluoride-based etchant to etch silicon-based materials. Such etchants produce an etch selectivity of less than 15:1.
As device dimension decreases and complexity increases in the advance IC designs, it is becoming more important to have high selectivity between different types of silicon-based materials. Typically, the etch selectivity of different silicon-based materials required in advance IC designs exceeds that achievable with conventional wet etch processes. This results in reduced manufacturing yields or the loss of process capability at all. On the other hand very high selectivities offer new possibilities in process architecture.
From the above discussion, it is desirable to provide an etch system for silicon based oxides with high etch selectivity for advance IC designs.
Summary of the Invention
The invention relates to a highly selective etching of silicon-based materials. In one embodiment, an etchant comprising sulfuric acid and hydrofluoric acid having a low water content is used for to etch a doped silicate glass with a high selectivity to silicon-based materials such as silicon oxides, silicon nitrides,
silicate glass, or polysilicon. The water content of the etchant is less than 20% by volume.
Description of the Invention
The invention relates generally to semiconductor fabrication and particularly to an etchant that provides a high etch selectivity of a first material to a second material on a substrate such as a semiconductor wafer. The first and second materials, in one embodiment, are silicon-based materials. The silicon-based materials can be formed by techniques such as thermal oxidation, chemical vapor deposition (CVD) , or a combination of thermal oxidation and CVD.
In one embodiment, the first material comprises a doped silicate glass. Dopants such as boron, phosphorus, or arsenic, are useful to dope the silicate glass. In one embodiment, the doped silicate glass comprises, for example boron such as borosilicate glass (BSG) . Other types of doped silicate glass such as phosphosilicate glass (PSG) are also useful. A doped silicate glass comprising more than one type of dopant, such as borophosphosilicate glass (BPSG) is also useful. Including other types of dopants, such as phosphorous (P) or arsenic (A) , in the doped silicate glass is also useful. The second silicon-based material comprises
silicon oxide, silicon nitride, undoped silicate glass or polysilicon. The polysilicon can be doped or undoped. In one embodiment, the second silicon-based material comprises silicon oxide. The silicon-based oxide is formed by thermal oxidation. The etch system etches the doped silicate glass with an etch selectivity to the silicon oxide of greater than about 15:1, preferably greater than about 40:1, more preferably greater than about 70:1, and even more preferably greater than about 100:1.
In accordance with one embodiment of the invention, the etchant comprises sulfuric acid and hydrofluoric acid having a low water content to produce a high etch selectivity between silicon-based materials. In one embodiment, the etch system comprises a water content of less than about 20% by volume, preferably less than about 15% by volume, more preferably less than about 10% by volume, and even more preferably less than about 5% by volume .
The high etch selectivity can be achieved using a wide range of mixing ratio of concentrated sulfuric acid and concentrated hydrofluoric acid. The ratio of the acids affect the etch rate. A higher ratio of sulfuric acid causes the etchant to etch at a lower etch rate and vice-versa. Although the ratio of sulfuric acid and
hydrofluoric acid changes actual etch rates of the materials being etched, the etchant retains its high etch selectivity characteristics. In one embodiment, the etchant comprises sulfuric acid and hydrofluoric acid in a ratio of about 5:1 to about 20:1 by volume. A ratio of greater than 20:1 can also be useful if lower etch rates are desired.
The substrate is exposed to the etchant using wet etch tools, such as a bath, a spray tool or a spintech tool . The etchant exhibits high etch selectivity characteristics over a wide range of temperatures. For example, the etchant can be used at temperatures ranging from below room temperature to above 80°C with a high etch selectivity. The temperature, however, does affect the etch rates of the materials. As such, the temperature of the etch can be chosen to produce the desired etch rates on the materials while still retaining the desired high etch selectivity property.
The etch rate of the doped silicate glass can be controlled by changing the concentration of the dopants. In particular, the etch rate can be increased or decreased by increasing or decreasing the dopant concentration, respectively, in the doped silicate glass. In one embodiment, the doped silicate glass comprises a dopant concentration of at least 3 wt%. A dopant
concentration of about 3 - 3.5 wt% has been found to produce an etch selectivity to silicon oxide of about 45:1. Increasing the dopant concentration of the doped silicate glass to above 5 wt% produces an etch selectivity to silicon oxide of greater than about 70:1. In one embodiment, the BSG comprises a concentration of B of at least 3 wt%, preferably greater than about 5 wt%.
Example
An etchant comprising a mixture of 5 parts sulfuric acid (96%) and 1 part hydrofluoric acid (49%) was used to etch a BSG layer comprising 5 wt% B and a thermal oxide layer. The etchant yielded an etch rate of about 720 nm/min for the BSG layer and only 14 nm/min for the thermal oxide layer, resulting in an etch selectivity of the BSG to the thermal oxide of about 51:1.
While the invention has been particularly shown and described with reference to various embodiments, it will be recognized by those skilled in the art that modifications and changes may be made to the present invention without departing from the scope thereof. The scope of the invention should therefore be determined not with reference to the above description but with reference to the appended claims along with their full scope of equivalents.
Claims
1. An etchant comprising sulfuric acid and hydrofluoric acid with a low water content to produce a high etch selectivity.
2. The etchant of claim 1 wherein the first material comprises a doped silicate glass and the second material comprises a silicon-based material.
3. The etchant of claim 2 wherein the first material comprises a doped silicate glass and the second material comprises a silicon-based material selected from the consisting of polysilicon, silicate glass, silicon oxide, or silicon nitride.
4. The etchant of claim 3 wherein the doped silicate glass comprises a dopant concentration of greater than 3 wt%.
5. The etchant of claim 4 wherein the water content is less than about 20% by volume.
6. The etchant of claim 4 wherein the water content is less than about 15% by volume.
7. The etchant of claim 4 wherein the water content is less than about 10% by volume.
8. The etchant of claim 4 wherein the water content is less than about 5% by volume.
9. The etchant of claim 3 wherein the doped silicate glass comprises a dopant concentration of greater than 5 wt%.
10. The etchant of claim 9 wherein the water content is less than about 20% by volume.
11. The etchant of claim 9 wherein the water content is less than about 15% by volume.
12. The etchant of claim 9 wherein the water content is less than about 10% by volume.
13. The etchant of claim 9 wherein the water content is less than about 5% by volume.
14. The etchant of claim 3 wherein the doped silicate glass comprises boron.
15. The etchant of claim wherein the doped silicate glass comprises a boron concentration of greater than 3 wt%.
16. The etchant of claim 15 wherein the water content is less than about 20% by volume.
17. The etchant of claim 15 wherein the water content is less than about 15% by volume.
18. The etchant of claim 15 wherein the water content is less than about 10% by volume.
19. The etchant of claim 15 wherein the water content is less than about 5% by volume.
20. The etchant of claim wherein the doped silicate glass comprises a boron concentration of greater than 5 wt%.
21. The etchant of claim 20 wherein the water content is less than about 20% by volume.
22. The etchant of claim 20 wherein the water content is less than about 15% by volume.
23. The etchant of claim 20 wherein the water content is less than about 10% by volume.
24. The etchant of claim 20 wherein the water content is less than about 5% by volume.
25. The etchant of claim 2 wherein the water content is less than about 20% by volume.
26. The etchant of claim 2 wherein the water content is less than about 15% by volume.
27. The etchant of claim 2 wherein the water content is less than about 10% by volume.
28. The etchant of claim 2 wherein the water content is less than about 5% by volume.
29. The etchant of claim 25 wherein the high etch selectivity of the first material to the second material is greater than 15:1
30. The etchant of claim 25 wherein the high etch selectivity of the first material to the second material is greater than 45:1
31. The etchant of claim 25 wherein the high etch selectivity of the first material to the second material is greater than 70:1
32. The etchant of claim 25 wherein the high etch selectivity of the first material to the second material is greater than 100:1
33. A method for wet etching comprising: providing a substrate including first and second materials; and exposing the substrate to an etchant comprising sulfuric acid and hydrofluoric acid with a low water content, the etching etches the first material with a high etch selectivity to the second material .
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US40490799A | 1999-09-24 | 1999-09-24 | |
US09/404,907 | 1999-09-24 |
Publications (1)
Publication Number | Publication Date |
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WO2001024244A1 true WO2001024244A1 (en) | 2001-04-05 |
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PCT/US2000/025481 WO2001024244A1 (en) | 1999-09-24 | 2000-09-15 | High etch selectivity etchant for doped silicate glass |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10544329B2 (en) | 2015-04-13 | 2020-01-28 | Honeywell International Inc. | Polysiloxane formulations and coatings for optoelectronic applications |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3751314A (en) * | 1971-07-01 | 1973-08-07 | Bell Telephone Labor Inc | Silicon semiconductor device processing |
US4465549A (en) * | 1984-01-26 | 1984-08-14 | Rca Corporation | Method of removing a glass backing plate from one major surface of a semiconductor wafer |
US5300463A (en) * | 1992-03-06 | 1994-04-05 | Micron Technology, Inc. | Method of selectively etching silicon dioxide dielectric layers on semiconductor wafers |
EP0932187A2 (en) * | 1998-01-27 | 1999-07-28 | International Business Machines Corporation | Trench etching using borosilicate glass mask |
DE19850838A1 (en) * | 1998-09-09 | 2000-03-23 | Mosel Vitelic Inc | Improving wet etching uniformity during spin-etching of a layer on a semiconductor wafer, by forming a water film on the wafer before acid etching of the layer |
EP0989598A2 (en) * | 1998-09-25 | 2000-03-29 | Siemens Aktiengesellschaft | Process for wet etching a semiconductor structure |
-
2000
- 2000-09-15 WO PCT/US2000/025481 patent/WO2001024244A1/en active Search and Examination
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3751314A (en) * | 1971-07-01 | 1973-08-07 | Bell Telephone Labor Inc | Silicon semiconductor device processing |
US4465549A (en) * | 1984-01-26 | 1984-08-14 | Rca Corporation | Method of removing a glass backing plate from one major surface of a semiconductor wafer |
US5300463A (en) * | 1992-03-06 | 1994-04-05 | Micron Technology, Inc. | Method of selectively etching silicon dioxide dielectric layers on semiconductor wafers |
EP0932187A2 (en) * | 1998-01-27 | 1999-07-28 | International Business Machines Corporation | Trench etching using borosilicate glass mask |
DE19850838A1 (en) * | 1998-09-09 | 2000-03-23 | Mosel Vitelic Inc | Improving wet etching uniformity during spin-etching of a layer on a semiconductor wafer, by forming a water film on the wafer before acid etching of the layer |
EP0989598A2 (en) * | 1998-09-25 | 2000-03-29 | Siemens Aktiengesellschaft | Process for wet etching a semiconductor structure |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10544329B2 (en) | 2015-04-13 | 2020-01-28 | Honeywell International Inc. | Polysiloxane formulations and coatings for optoelectronic applications |
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