CN101542730B - 非易失性存储元件和其制造方法、以及使用了该非易失性存储元件的非易失性半导体装置 - Google Patents

非易失性存储元件和其制造方法、以及使用了该非易失性存储元件的非易失性半导体装置 Download PDF

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CN101542730B
CN101542730B CN200880000421.7A CN200880000421A CN101542730B CN 101542730 B CN101542730 B CN 101542730B CN 200880000421 A CN200880000421 A CN 200880000421A CN 101542730 B CN101542730 B CN 101542730B
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layer
electrode
tantalum oxide
oxygen
resistance
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CN101542730A (zh
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神泽好彦
片山幸治
藤井觉
村冈俊作
小佐野浩一
三谷觉
宫永良子
高木刚
岛川一彦
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Nuvoton Technology Corp Japan
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Matsushita Electric Industrial Co Ltd
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    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/24—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies
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    • H10B63/20—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes
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    • H10B63/84—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays arranged in a direction perpendicular to the substrate, e.g. 3D cell arrays
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    • H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
    • H10D84/206—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of combinations of capacitors and resistors
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    • H10N70/026—Formation of switching materials, e.g. deposition of layers by physical vapor deposition, e.g. sputtering
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    • H10N70/061—Shaping switching materials
    • H10N70/063—Shaping switching materials by etching of pre-deposited switching material layers, e.g. lithography
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    • H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
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    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/883—Oxides or nitrides
    • H10N70/8833—Binary metal oxides, e.g. TaOx
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    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • G11C2013/0073—Write using bi-directional cell biasing
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    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/30—Resistive cell, memory material aspects
    • G11C2213/32—Material having simple binary metal oxide structure
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    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
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    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/72—Array wherein the access device being a diode
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    • G11—INFORMATION STORAGE
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    • G11C2213/79—Array wherein the access device being a transistor
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CN200880000421.7A 2007-06-05 2008-03-26 非易失性存储元件和其制造方法、以及使用了该非易失性存储元件的非易失性半导体装置 Active CN101542730B (zh)

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PCT/JP2008/000745 WO2008149484A1 (ja) 2007-06-05 2008-03-26 不揮発性記憶素子およびその製造方法、並びにその不揮発性記憶素子を用いた不揮発性半導体装置

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