TWI764644B - 顯示裝置及電子裝置 - Google Patents
顯示裝置及電子裝置Info
- Publication number
- TWI764644B TWI764644B TW110110682A TW110110682A TWI764644B TW I764644 B TWI764644 B TW I764644B TW 110110682 A TW110110682 A TW 110110682A TW 110110682 A TW110110682 A TW 110110682A TW I764644 B TWI764644 B TW I764644B
- Authority
- TW
- Taiwan
- Prior art keywords
- layer
- wiring
- transistor
- conductive layer
- circuit
- Prior art date
Links
Images
Classifications
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
- G09G3/36—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
- G09G3/3611—Control of matrices with row and column drivers
- G09G3/3648—Control of matrices with row and column drivers using an active matrix
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
- H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
- H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
- H10D30/6739—Conductor-insulator-semiconductor electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/674—Thin-film transistors [TFT] characterised by the active materials
- H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
- H10D30/6756—Amorphous oxide semiconductors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/60—Electrodes characterised by their materials
- H10D64/62—Electrodes ohmically coupled to a semiconductor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
- H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/481—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs integrated with passive devices, e.g. auxiliary capacitors
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2300/00—Aspects of the constitution of display devices
- G09G2300/08—Active matrix structure, i.e. with use of active elements, inclusive of non-linear two terminal elements, in the pixels together with light emitting or modulating elements
- G09G2300/0809—Several active elements per pixel in active matrix panels
- G09G2300/0842—Several active elements per pixel in active matrix panels forming a memory circuit, e.g. a dynamic memory with one capacitor
Landscapes
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Theoretical Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Thin Film Transistor (AREA)
- Liquid Crystal (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Electroluminescent Light Sources (AREA)
- Semiconductor Memories (AREA)
- Electrodes Of Semiconductors (AREA)
- Electrophonic Musical Instruments (AREA)
- Liquid Crystal Display Device Control (AREA)
- Control Of Indicators Other Than Cathode Ray Tubes (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009205136 | 2009-09-04 | ||
| JP2009-205136 | 2009-09-04 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW202127414A TW202127414A (zh) | 2021-07-16 |
| TWI764644B true TWI764644B (zh) | 2022-05-11 |
Family
ID=43647384
Family Applications (11)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW110110682A TWI764644B (zh) | 2009-09-04 | 2010-09-02 | 顯示裝置及電子裝置 |
| TW111131346A TWI803414B (zh) | 2009-09-04 | 2010-09-02 | 顯示裝置及電子裝置 |
| TW105112626A TWI605441B (zh) | 2009-09-04 | 2010-09-02 | 顯示裝置及電子裝置 |
| TW109129921A TWI726805B (zh) | 2009-09-04 | 2010-09-02 | 顯示裝置及電子裝置 |
| TW099129686A TWI529688B (zh) | 2009-09-04 | 2010-09-02 | 顯示裝置及電子裝置 |
| TW106129014A TWI626635B (zh) | 2009-09-04 | 2010-09-02 | 顯示裝置及電子裝置 |
| TW107110103A TWI634538B (zh) | 2009-09-04 | 2010-09-02 | 顯示裝置及電子裝置 |
| TW111114093A TWI778927B (zh) | 2009-09-04 | 2010-09-02 | 顯示裝置及電子裝置 |
| TW105101715A TWI541792B (zh) | 2009-09-04 | 2010-09-02 | 顯示裝置及電子裝置 |
| TW107120809A TW201901647A (zh) | 2009-09-04 | 2010-09-02 | 顯示裝置及電子裝置 |
| TW108147658A TWI708228B (zh) | 2009-09-04 | 2010-09-02 | 顯示裝置及電子裝置 |
Family Applications After (10)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW111131346A TWI803414B (zh) | 2009-09-04 | 2010-09-02 | 顯示裝置及電子裝置 |
| TW105112626A TWI605441B (zh) | 2009-09-04 | 2010-09-02 | 顯示裝置及電子裝置 |
| TW109129921A TWI726805B (zh) | 2009-09-04 | 2010-09-02 | 顯示裝置及電子裝置 |
| TW099129686A TWI529688B (zh) | 2009-09-04 | 2010-09-02 | 顯示裝置及電子裝置 |
| TW106129014A TWI626635B (zh) | 2009-09-04 | 2010-09-02 | 顯示裝置及電子裝置 |
| TW107110103A TWI634538B (zh) | 2009-09-04 | 2010-09-02 | 顯示裝置及電子裝置 |
| TW111114093A TWI778927B (zh) | 2009-09-04 | 2010-09-02 | 顯示裝置及電子裝置 |
| TW105101715A TWI541792B (zh) | 2009-09-04 | 2010-09-02 | 顯示裝置及電子裝置 |
| TW107120809A TW201901647A (zh) | 2009-09-04 | 2010-09-02 | 顯示裝置及電子裝置 |
| TW108147658A TWI708228B (zh) | 2009-09-04 | 2010-09-02 | 顯示裝置及電子裝置 |
Country Status (5)
| Country | Link |
|---|---|
| US (9) | US9257082B2 (https=) |
| JP (13) | JP5581151B2 (https=) |
| KR (10) | KR101746198B1 (https=) |
| CN (2) | CN105590611B (https=) |
| TW (11) | TWI764644B (https=) |
Families Citing this family (131)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20130130879A (ko) * | 2009-10-21 | 2013-12-02 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 제작방법 |
| CN102906804B (zh) * | 2010-05-24 | 2014-03-12 | 夏普株式会社 | 薄膜晶体管基板及其制造方法 |
| JP2012151453A (ja) * | 2010-12-28 | 2012-08-09 | Semiconductor Energy Lab Co Ltd | 半導体装置および半導体装置の駆動方法 |
| JP6023453B2 (ja) * | 2011-04-15 | 2016-11-09 | 株式会社半導体エネルギー研究所 | 記憶装置 |
| US8797788B2 (en) | 2011-04-22 | 2014-08-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| TWI843078B (zh) | 2011-05-05 | 2024-05-21 | 日商半導體能源研究所股份有限公司 | 半導體裝置及其製造方法 |
| TWI536502B (zh) * | 2011-05-13 | 2016-06-01 | 半導體能源研究所股份有限公司 | 記憶體電路及電子裝置 |
| KR101889383B1 (ko) * | 2011-05-16 | 2018-08-17 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 프로그래머블 로직 디바이스 |
| JP6013680B2 (ja) * | 2011-05-20 | 2016-10-25 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| US8804344B2 (en) * | 2011-06-10 | 2014-08-12 | Scott Moncrieff | Injection molded control panel with in-molded decorated plastic film |
| US8878589B2 (en) | 2011-06-30 | 2014-11-04 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and driving method thereof |
| CN103765306B (zh) * | 2011-08-10 | 2016-08-31 | 夏普株式会社 | 液晶显示装置和液晶显示装置的制造方法 |
| JP6064353B2 (ja) * | 2011-09-27 | 2017-01-25 | 凸版印刷株式会社 | 薄膜トランジスタの製造方法 |
| US8736315B2 (en) | 2011-09-30 | 2014-05-27 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| KR20130043063A (ko) | 2011-10-19 | 2013-04-29 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 반도체 장치의 제작 방법 |
| JP6099372B2 (ja) | 2011-12-05 | 2017-03-22 | 株式会社半導体エネルギー研究所 | 半導体装置及び電子機器 |
| JP2013206919A (ja) * | 2012-03-27 | 2013-10-07 | Sony Corp | 薄膜トランジスタおよびその製造方法ならびに表示装置 |
| US9419146B2 (en) | 2012-01-26 | 2016-08-16 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
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| WO2013141062A1 (ja) * | 2012-03-21 | 2013-09-26 | シャープ株式会社 | 半導体装置および半導体装置の製造方法 |
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| KR102141977B1 (ko) | 2012-07-20 | 2020-08-06 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 반도체 장치의 제조 방법 |
| JP2014045175A (ja) * | 2012-08-02 | 2014-03-13 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
| JP2014199899A (ja) * | 2012-08-10 | 2014-10-23 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| JP2014038911A (ja) * | 2012-08-13 | 2014-02-27 | Sony Corp | 薄膜トランジスタおよびその製造方法、並びに表示装置および電子機器 |
| KR102679509B1 (ko) * | 2012-09-13 | 2024-07-01 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
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| KR102109166B1 (ko) | 2013-01-15 | 2020-05-12 | 삼성디스플레이 주식회사 | 박막 트랜지스터 및 이를 구비하는 표시 기판 |
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| JP6406926B2 (ja) | 2013-09-04 | 2018-10-17 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| US10008513B2 (en) * | 2013-09-05 | 2018-06-26 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
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| TWI550332B (zh) * | 2013-10-07 | 2016-09-21 | 電子墨水加利福尼亞有限責任公司 | 用於彩色顯示裝置的驅動方法 |
| JP6433757B2 (ja) * | 2013-10-31 | 2018-12-05 | 株式会社半導体エネルギー研究所 | 半導体装置、表示装置、電子機器 |
| CN103560110B (zh) * | 2013-11-22 | 2016-02-17 | 京东方科技集团股份有限公司 | 一种阵列基板及其制备方法、显示装置 |
| JP6496132B2 (ja) * | 2013-12-02 | 2019-04-03 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| US9577110B2 (en) * | 2013-12-27 | 2017-02-21 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device including an oxide semiconductor and the display device including the semiconductor device |
| JP6506545B2 (ja) * | 2013-12-27 | 2019-04-24 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| TWI658597B (zh) * | 2014-02-07 | 2019-05-01 | 日商半導體能源研究所股份有限公司 | 半導體裝置 |
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| KR20150116942A (ko) * | 2014-04-08 | 2015-10-19 | 삼성디스플레이 주식회사 | 용기 덮개 겸용 표시 장치 |
| US9768315B2 (en) * | 2014-04-18 | 2017-09-19 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and display device having the same |
| JP6368139B2 (ja) * | 2014-05-07 | 2018-08-01 | 株式会社半導体エネルギー研究所 | タッチセンサ |
| JP6609764B2 (ja) * | 2014-05-16 | 2019-11-27 | 国立大学法人 名古屋工業大学 | p型酸化亜鉛膜の製造方法 |
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| JP6436660B2 (ja) * | 2014-07-07 | 2018-12-12 | 三菱電機株式会社 | 薄膜トランジスタ基板およびその製造方法 |
| WO2016021320A1 (ja) * | 2014-08-07 | 2016-02-11 | シャープ株式会社 | アクティブマトリクス基板およびその製造方法 |
| US9766517B2 (en) * | 2014-09-05 | 2017-09-19 | Semiconductor Energy Laboratory Co., Ltd. | Display device and display module |
| WO2016034984A1 (en) * | 2014-09-05 | 2016-03-10 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, driver ic, display device, and electronic device |
| US20160155849A1 (en) * | 2014-12-02 | 2016-06-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, method for manufacturing semiconductor device, module, and electronic device |
| CN107111985B (zh) * | 2014-12-29 | 2020-09-18 | 株式会社半导体能源研究所 | 半导体装置以及包括该半导体装置的显示装置 |
| US9633710B2 (en) | 2015-01-23 | 2017-04-25 | Semiconductor Energy Laboratory Co., Ltd. | Method for operating semiconductor device |
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