TW560032B - Lead frame, method for manufacturing the same, resin-encapsulated semiconductor device and method for manufacturing the same - Google Patents
Lead frame, method for manufacturing the same, resin-encapsulated semiconductor device and method for manufacturing the same Download PDFInfo
- Publication number
- TW560032B TW560032B TW91115421A TW91115421A TW560032B TW 560032 B TW560032 B TW 560032B TW 91115421 A TW91115421 A TW 91115421A TW 91115421 A TW91115421 A TW 91115421A TW 560032 B TW560032 B TW 560032B
- Authority
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- Taiwan
- Prior art keywords
- resin
- wafer
- lead
- semiconductor device
- sealed semiconductor
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 314
- 238000000034 method Methods 0.000 title claims description 46
- 238000004519 manufacturing process Methods 0.000 title claims description 23
- 239000002184 metal Substances 0.000 claims abstract description 70
- 229910052751 metal Inorganic materials 0.000 claims abstract description 70
- 229920005989 resin Polymers 0.000 claims abstract description 45
- 239000011347 resin Substances 0.000 claims abstract description 45
- 235000012431 wafers Nutrition 0.000 claims description 211
- 238000007789 sealing Methods 0.000 claims description 46
- 238000012545 processing Methods 0.000 claims description 31
- 230000003014 reinforcing effect Effects 0.000 claims description 8
- 238000005452 bending Methods 0.000 claims description 5
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- 230000004048 modification Effects 0.000 description 28
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- 230000037431 insertion Effects 0.000 description 18
- 238000010586 diagram Methods 0.000 description 17
- 239000000758 substrate Substances 0.000 description 14
- 238000000926 separation method Methods 0.000 description 11
- 238000007747 plating Methods 0.000 description 9
- 238000004891 communication Methods 0.000 description 6
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 6
- 239000000853 adhesive Substances 0.000 description 4
- 230000001070 adhesive effect Effects 0.000 description 4
- 229910000679 solder Inorganic materials 0.000 description 4
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000017525 heat dissipation Effects 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 2
- 230000006870 function Effects 0.000 description 2
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- 230000005855 radiation Effects 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- 230000000087 stabilizing effect Effects 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 1
- 229910020816 Sn Pb Inorganic materials 0.000 description 1
- 229910020830 Sn-Bi Inorganic materials 0.000 description 1
- 229910020922 Sn-Pb Inorganic materials 0.000 description 1
- 229910018728 Sn—Bi Inorganic materials 0.000 description 1
- 229910008783 Sn—Pb Inorganic materials 0.000 description 1
- 229920001646 UPILEX Polymers 0.000 description 1
- AXQKVSDUCKWEKE-UHFFFAOYSA-N [C].[Ge].[Si] Chemical compound [C].[Ge].[Si] AXQKVSDUCKWEKE-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 239000003522 acrylic cement Substances 0.000 description 1
- 238000011949 advanced processing technology Methods 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000010295 mobile communication Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 230000002787 reinforcement Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
Classifications
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- H—ELECTRICITY
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- H01L23/00—Details of semiconductor or other solid state devices
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- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
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- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4821—Flat leads, e.g. lead frames with or without insulating supports
- H01L21/4842—Mechanical treatment, e.g. punching, cutting, deforming, cold welding
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- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
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- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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Description
560032 A7 B7 五、發明説明(1 發明背景 本發明係關於一種引導框架及其製造方法,以及以樹脂 密封將引導框架與半導體晶片密封而形成之樹脂密封型半 導體裝置及其製造方法,特別關於以穩定電氣特性、提高 其高頻特性為目的所製造之樹脂密封型半導體裝置及其製 造方法,以及用於該樹脂密封型半導體裝置之引導框架及 其製造方法。 近年來,為了適應於電子機器之小型化、高密度化,要 樹脂密封型半導體裝置等半導體部件之高密度、高功能 化,半導體部件之小型化、薄型化也隨之發展。於這樣之 情沉下,改良了被稱為QFP( Quad Flat Package)之外部端子向 密封樹脂外邊延長之類型之半導體裝置,實現了從封裝體 露出來之信號用下部兼作外部端子之QFN( Quad Flat Non — leaded Package)或被稱為 LGA( Land Grid Array)類型之樹脂 密封型半導體裝置之實用化。 這樣小型化、薄型化之樹脂密封型半導體裝置,例如用 於南頻之通信系統。尤其係,於手機與PDA( Personal Digital Assistance)等移動體通信中,發信大容量數據需要使用 1 G Η z以上高頻。就拿手機來說,吾人認為,今後以 WCDMA( Wide — Band CDMA)方式於1.3GHz左右之通信係主 流者。於利用於這些用途之樹脂密封型半導體裝置中,適 應地使用具有良好高頻特性之GaAs(砷化鎵)、SiGeC(矽鍺碳) 等由化合物半導體形成之半導體晶片。再者,於封裝體上 亦需要施加不阻礙半導體晶片特性之措施。 -4 - 本紙張尺度適用中國國家榡準(CNS) A4規格(210 X 297公釐) 裝 訂
〜線 560032 A7 B7 五、發明説明(2 ) 此外,一般要求半導體裝要確保連接接地電源,由此使 其電氣特性穩定化。為了謀求樹脂密封型半導體裝置電氣 特性穩定化,先行QFP、係備有:晶片銲墊、設於該晶片 銲墊之上面上之半導體晶片、支持晶片銲墊之吊引線、於 晶片銲墊周圍互相間隔相等配置之信號用引線,他以金屬 細線將半導體晶片上之接地用電極銲墊與半導體晶片與晶 片銲墊間之缝隙部分、或將電極銲墊與吊引線分別連接, 由此獲得穩定電源接地。這樣結構,如下說明般亦適用於 QFN與 LGA。 肩46(a)為QFN型即先行樹脂密封型半導體裝置從底面看 時之平面圖,圖46(b)為圖46(a)於XLVIb —XLVIb線剖開 之先行樹脂密封型半導體裝置之斷面圖,圖46(c)為於圖 4 6(&)於又1>¥1(:—又1^¥1〇線之先行樹脂密封型半導體裝置之斷 面圖。 另外,圖45(a)、圖45(b)分別舉例說明使用於先行樹脂 密封型半導體裝置上之引導框架之圖。 如圖46(a)〜圖46(c)所示,QFN型即先行樹脂密封型半 導體裝置,其底面近似為四邊形,具有:晶片銲墊306,被 安裝於晶片銲墊306上、且具有複數個電極銲墊之半導體晶 片401,配置於晶片銲墊306之周圍、並其下面露出來之複數 個信號用引線302,將半導體晶片401中之電極銲墊與信號用 引線302連接之金屬細線402,支持晶片銲墊306之吊引線 305,將信號用引線302之上面、晶片銲墊306、金屬細線402 以及半導體晶片401密封之密封樹脂403。於圖46 (a)中,以 -5- 本紙張尺度適用中國國家標準(CNS) A4規格(210X 297公釐) 560032 A7 B7 五、發明説明(3 ) 虛線顯示密封於内部之晶片銲墊306及吊引線305。信號用引 線302沿裝置底面之四邊被配置。這樣種類之樹脂密封型半 導體裝置被稱謂周邊設備型(peripheral type)。補充一下,吊 引線305從樹脂密封型半導體裝置底面之四個角露出來。該 吊引線305與晶片銲墊306連接,由金屬細線402與半導體晶 片401之接地用電極銲墊。由此,如上所述那樣使先行QFN 型樹脂密封型半導體裝置電氣性穩定。 另夕卜,如圖45(a)、圖45(b)所示,QFN型即先行樹脂密封 型半導體裝置使用之引導框架,具有其臺階部305a往上彎曲 之吊引線305,晶片銲墊306設置於其上面比信號用引線302 之上面來得高之處。由此可於晶片銲勢上安裝更大之半導 體晶片。該臺階部305a,釋放於樹脂密封時所施加之成型夾 住力,故防止晶片銲墊306之位置變化或變形。各信號用引 線302,具有前端溝302b與後端溝302c,他們於樹脂密封型 半導體裝置中使信號用引線302吸收應力,亦使金屬細線不 容易斷線。補充一下,於圖中包圍引導框架之虛線係樹脂 密封型半導體裝置之外形線307者。 圖47(a)為所示面積陳列構裝即先行LGA型樹脂密封型半 導體裝置之外觀立體圖,圖47(b)為所示先行樹脂密封型半 導體裝置之斷面圖,圖47(c)為先行樹脂半導體裝置從底面 看時之平面圖。 如圖4 7所示,LGA即樹脂密封型半導體裝置,例如具有 四邊形底面,還具有:晶片銲墊346,被安裝於晶片銲墊346 之上面上、並具有電極銲墊之半導體晶片441,配置於晶片 -6 -
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線 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐) 560032 A7 B7 五、發明説明(4 ) 銲墊346周邊之信號用引線342,連接電極銲墊與信號用引線 342之金屬細線442,密封信號用引線342之上面侧、晶片銲 墊346、半導體晶片441以及金屬細線442之密封樹脂443。信 號用引線342之下部從樹脂密封型半導體裝置底面上以圓形 露出來,這些信號用引線342成為以矩陣狀配置之外部端子 344。晶片銲墊346中中心部以外之部分,從裝置底面露出 來。外部端子3 4 4中,處於底面四個角的大小較大,用於加 強焊盤兼作接地用端子344a。另外,於該加強焊盤兼作接地 用端子344 a連接有半導體晶片接地用電極銲墊,故該樹脂 密封型半導體裝置之電氣性很穩定。 此外,作為信號用引線之下部作外部端子之樹脂密封型 半導體裝置,還有其底面為四邊形、外部端子沿底面對邊 配置之SON(Small Outline Package)等,其電氣性亦以同樣方 法很穩定。 可是,於先行結構下,於樹脂密封型半導體裝置更小型 化、高密度化時,便需要作為半導體裝置骨架之引導框架 之高度加工技術,故很難實現小型化、高度化。 另一方面,於先行樹脂密封型半導體裝置之結構下,很 難得到能夠使用於高頻通信等高頻特性。這是因為於高頻 信號輸入到樹脂密封型半導體裝置互相鄰接之外部端子 時,高頻信號互相幹涉,導致雜音之產生者。 以通信機器為代表之一組機器裝置内所安裝之電子部 件,需要更高之高頻特性,故受上述雜音之影響愈大。 發明概述 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐) 裝 訂
線 560032 A7 B7 五、發明説明(5 ) 本發明之目的為提供一種即使實現了小型化、薄型化, 其電氣特性亦很穩定,且具有很優秀之高頻特性之樹脂密 封型半導體裝置及其製造方法,以及所使用之引導框架。 本發明引導框架備有:框架、用以將半導體晶片裝於其 上面之晶片銲墊、與上述框架連接之複數個信號用引線、 與上述框架以及上述晶片銲墊連接之至少一個接地用連接 引線,上述信號用引線及上述接地用連接引線之下部之至 少一部分成為外部端子。 由此設置了與晶片銲蟄連接之接地用連接引線,故可用 本發明引導框架製造電氣性很穩定、且其高頻特性比先行 更提高之樹脂密封型半導體裝置。 至少將上述信號用引線與上述接地用連接引線之一部分 交替配置,由此以接地用連接引線及晶片銲墊包圍信號用 引線,故可製造更提高高頻特性之樹脂密封型半導體裝 置。 上述各接地用連接引線具有臺階部,於上述臺階部高起 部分之下面側形成有溝,由此可使溝部分端面之角度變 尖,故例如於下面侧貼密封膠帶之引導框架之上面密封 時,可防止樹脂進入到密封膠帶與接地用連接引線之間。 即,可防止於外部端子下形成樹脂殘渣。 上述晶片銲墊之上面之至少一部分,比上述信號用引線 之上面來得高0.03mm以上、引導框架厚度之3/4以下,由 此可於平面上將半導體晶片與信號用引線重疊安裝。 在此,若上移安置高度比0.03mm來得小,就很難確實以 -8- 本紙張尺度適用中國國家標準(CNS) A4規格(210X 297公釐) 裝 訂
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560032 A7 ----- B7 五、發明説明(7 ) 高放熱性,又可更穩定地取接地用電源。 、進-步備有支持上述晶片銲墊之吊引線,於上述吊引線 足下部中至少一部分成為加強外部端子之加強焊盤,上述 外部端子於上述晶片銲墊之周圍排成2行以上,由此可用外 部端子製造所謂LGA之樹脂密封型半導體裝置。 本發明之樹脂密封型半導體裝置,備有:晶片銲墊,被 安裝於上述晶片銲墊之上面上且具有接地用銲墊與電極銲 墊足半導體晶片,被設在上述晶片銲墊之周圍之信號用引 線,連接於上述晶片銲墊上之接地用引線,連接部件,密 封上述半導體晶片'晶片銲墊以及連接部件且使上述信號 用引線及接地用連接引線之下部之至少一部分作為外部端 子露出來之密封樹脂。 依照該結構,例如於將接地用連接引線連接於接地用銲 墊上之場合,接地用連接引線之下部成為外部端子而連接 於接地用電源上,故可實現電氣性很穩定之樹脂密封型半 導體裝置。還有,於高頻信號傳到信號用引線時,以接地 用連接引線與晶片使信號間之幹涉減少,故可實現使高頻 信號之插入損耗減少之樹脂密封型半導體裝置。於此結構 下,即使不設置吊引線,也能以接地用連接引線支持晶片 上述連接部件,係將從上述信號用引線到上述電極銲墊 之間、以及從至少一個上述接地用連接引線到上述接地用 銲墊之間連接好,由此可實現使高頻信號之插入損耗減少 之樹脂密封型半導體裝置。 -10- 本纸張尺度適用中國國家標準(CNS) A4規格(210X297公釐) 裝 訂 560032 A7 B7 五、發明説明(8 ) 至少一個上述信號用引線,係以鄰接之上述接地用連接 引線與上述晶片銲墊包圍,由此有效地減少穿過信號用引 線之高頻信號間之幹涉,故可進一步提高樹脂密封型半導 體裝置之高頻特性。 上述連接部件為金屬細線,上述外部端子之長度比上述 金屬細線來得短,故可實現於如QFp般金屬細線比外部端 子來得長之樹脂密封型半導體裝置上設置接地用連接引線 時未把貝現之、且同頻插入損耗明顯減少之樹脂密封型半 導體裝置。 另外,進一步備有連接於上述晶片銲墊上之吊引線。 此時,上述吊引線與上述接地用銲墊以上述連接部件連 接,由此可減少於高頻信號穿過鄰接於吊引線之信號用引 | 線時,所發生之信號間之幹涉。 上述晶片銲墊中至少一部分露出來,上述接地用連接引 線中與上述晶片銲勢之連接部附近之下面往上彎曲亦可。 上述接地用連接引線中與上述晶片銲墊之連接部附近之 上面往上彎曲,由此能以彎曲部分支持半導體晶片。結 果,與不設置彎曲部分時相比,可裝上更大之半導體裝 置。 ^ 上述連接部件為金屬隆起物,上述半導體晶片之主面面 對晶片銲墊之上面,由此可進一步縮短電氣信號之通過經 路,可進一步提鬲本發明之樹脂密封型半導體裝置之舌領 I 二 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐)' '一—-- 560032 A7 B7 五、發明説明(9 ) 述外部端子之形狀從為圓形、近似橢圓形以及近似長方形 中選擇之<。 上述外部端子亦可於上述晶片銲墊之周圍排成2行以上。 此時,該樹脂密封型半導體裝置從半導體晶片到外部端子 之距離更近了。 裝於上述半導體晶片上之半導體元件中,至少一個於 1.5GHz以上之頻率下放大或衰減功率,由此本發明之樹脂 密封型半導體裝置可適用於使用高頻信號之手機等。 本發明之引導框架之製造方法,係包括晶片銲墊、與連 接於上述晶片銲墊之接地用連接引線之引導框架之製造方 法,包括:工程(a),於上述接地用連接引線中與上述晶片 銲墊之連接部旁邊之下部形成複數個溝;工程(b),以加壓 加工使上述複數個溝之間往上彎曲形成臺階部。 藉由該方法,可使外部端子靠近晶片銲墊一侧之端部角 度變尖,故以後進行樹脂密封時可防止於外部端子下面上 產生樹脂殘i查。 本發明之樹脂密封型半導體裝置之製造方法,係備有晶 片銲墊、連接於上述晶片銲墊之接地用連接引線、以及具 有接地用銲墊之半導體晶片,且上述接地用連接引線之下 部之一部分作外部端子用之樹脂密封型半導體裝置之製造 方法,包括工程(a),於包括與晶片連接部之旁邊具有往上 彎曲之臺階部、且於上述臺階部高起部分之下部形成溝之 有接地用連接引線之引導框架之下面侧貼密封膠帶;工程 (b),上述工程(a)後,形成連接上述半導體晶片中之接地用 -12- 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐) 560032 A7 B7 五、發明説明(10 ) 銲墊與上述接地用連接引線之連接部件;工程(c),上述工 程(b)後進行樹脂密封,而不使密封樹脂覆蓋外部端子。 依照該方法,於工程(a)下於引導框架之下面貼密封膠 帶,且高起部分之下部角度變尖,故於工程(c)下,有效地 防止密封樹脂進入到外部端子之下面。也就是說,依照該 方法,可製造於外部端子上沒有樹脂殘渣之樹脂密封型半 導體裝置。 附圖之簡單說明 圖1(a)、圖1(b)皆為例示本發明第1實施形態之引導框架 之圖。 圖2(a)、圖2(b)為例示本發明第1實施形態之引導框架之 圖。 圖3係顯示使用第1實施形態所關係之引導框架之樹脂密 封型半導體裝置之平面圖。 圖4 (a)為本發明第1實施形態所關係之引導框架之變形 例,圖4(b)為使用該引導框架製造之樹脂密封型半導體裝 置之平面圖。 圖5為用以說明第1實施形態之引導框架之整個結構之 圖。 圖6(a)為使用施加錐度臺階加工之引導框架之樹脂密封 型半導體裝置之斷面圖,圖6(b)、圖6(c)皆為顯示引導框 架之加工工程之斷面圖。 圖7(a)為使用施加部分切斷加工時之第1實施形態所關係 之引導框架之樹脂密封型半導體裝置之斷面圖,圖7(b)、 -13- 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐) 裝 訂
560032 A7 B7 五、發明説明(12 ) 圖15為用以說明第1實施形態所關係之樹脂密封型半導體 裝置之第7變形例之平面圖。 圖16為顯示相對應圖15所示之第1實施形態所關係之樹脂 密封型半導體裝置第7變形例之先行樹脂密封型半導體裝置 之圖。 圖17為顯示第1實施形態所關係之樹脂密封型半導體裝置 之高頻特性之圖。 圖18(a)為顯示先行樹脂密封型半導體裝置中,信號用引 線或接地用引線與半導體晶片之連接部分之平面圖及電路 圖,圖18(b)為顯示第1實施形態所關係之樹脂密封型半導 體裝置中,信號用引線或接地用連接引線或接地用引線與 半導體晶片連接部分之平面圖及電路圖。 圖19(a)為例示第1實施形態樹脂密封型半導體裝置之平 面圖,圖19(b)為該樹脂密封型半導體裝置於XlXb—XlXb線 剖開後之斷面圖。 圖20(a)為顯示設置接地用連接引線之QFP之平面圖,圖 20(b)為該QFP於XXb—XXb線剖開後之斷面圖。 圖21為第1實施形態所關係之樹脂密封型半導體裝置中, 顯示插入損耗與金屬細線長度之關係之圖。 圖22(a)〜圖22(e)為顯示第1實施形態所關係之樹脂密封型 半導體裝置之製造工程之斷面圖。 圖23(a)、圖23(b)分別用以說明圖22(d)所示之樹脂密封 工程之斷面圖、及平面圖。 圖24為用以說明圖22(d)所示之樹脂密封工程完了後之引 -15- 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐) 裝 訂
線 560032 A7 B7 五、發明説明(13 ) 導框架整體結構之圖。 圖25(a)為用以說明製品分離工程之平面圖,圖25(b)為製 品分離工程前之樹脂密封型半導體裝置於XXVb —XXVb線剖 開後之斷面圖,圖25(c)為分離製品時之樹脂密封型半導體 裝置之切斷部分之擴大斷面圖。 圖26(a)為使金屬細線互相交叉設置之本實施形態之樹脂 密封型半導體裝置第8變形例於包括XXVI — XXVI線與 XXVI’一 XXVI’線之斷面上之斷面圖,圖26(b)為該樹脂密 封型半導體裝置之引導框架之平面圖。 圖2 7(a)為本發明第2實施形態所關係之樹脂密封型半導 體裝置之平面圖,圖27(b)為該樹脂密封型半導體裝置於 XXVIIb—XXVIIb線剖開後之斷面圖,圖27(c)為該樹脂密封 型半導體裝置於XXVIIc—XXVIIc線剖開後之斷面圖。 圖28(a)〜圖2 8(c)為用以說明第2實施形態所關係之樹脂 密封型半導體裝置中,接地用連接引線之位置之平面圖。 圖29(a)為用施加了錐形臺階加工之引導框架之第2實施 形態所關係之樹脂密封型半導體裝置之斷面圖,圖29(b)、 圖29(c)皆為引導框架之加工工程之斷面圖。 圖3 0 (a)為用施加了溝加工與錐形臺階加工之引導框架之 第2實施形態所關係之樹脂密封型半導體裝置之斷面圖,圖 3 0(b)、圖30(c)皆為顯示引導框架之加工工程之斷面圖。 圖3 1 (a)為用施加了以部分切斷加工之臺階加工之引導框 架之第2實施形態所關係之樹脂密封型半導體裝置之斷面 圖,圖3 1(b)、圖3 1(c)皆為該引導框架加工工程之斷面 -16- 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐) 560032 A7 B7 五、發明説明(15 ) 導框架時之第1變形例之斷面圖,圖37(c)為施加了臺階加工 與錐形臺階加工時之引導框架之第1變形例之斷面圖。 圖3 8 (a)為將第3實施形態所關係之樹脂密封型半導體裝置 之第2變形例之平面圖,圖38(b)為使用施加了臺階加工之 引導框架之第2變形例之斷面圖,圖38(c)為施加了臺階加工 與錐形臺階加工之第2變形例之斷面圖。 圖3 9 (a)為顯示第3實施形態所關係之樹脂密封型半導體裝 置第2變形例之外觀立體圖,圖39(b)為顯示第2變形例之内 部之平面圖,以及於通過晶片銲墊之線剖開之斷面圖。 圖40(a)為先行LGA用引導框架之左半部分之斷面圖,圖 40(b)為先行LGA用引導框架4等分後之平面圖,圖40(c)為 用於本發明第4實施形態之樹脂密封型半導體裝置之引導框 架之左半部分之斷面圖,圖40(d)為用於第4實施形態所關 係之樹脂密封型半導體裝置之引導框架4等分之平®圖。 圖41(a)為第4實施形態之樹脂密封型半導體裝置之平面 圖,圖41(b)為該樹脂密封型半導體裝置之透視平面圖及斷 面圖。 圖42(a)為顯示先行LGA用引導框架之變形例之左半部分 之斷面圖,圖42(b)為顯示將該引導框架變形例4等分後之 平面圖,圖42(c)為使用於第4實施形態所關係之樹脂密封 型之引導框架之左半部分之斷面圖,圖42(d)為使用於該引 導框架4等分後之平面圖。 圖43為本實施形態所關係之樹脂密封型半導體裝置之變 形例之平面圖,以及該變形例之斷面圖。 -18- 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐) 裝 訂
560032 A7 B7 五、發明説明(16 ) 圖44(a)為於第4實施形態所關係樹脂密封型半導體裝置 變形例之外觀立體圖,圖44(b)為該變形例之平面圖。 圖45(a)、圖45(b)分別舉例說明用於先行樹脂密封型半 導體裝置之引導框架之圖。 圖46(a)為先行QFN之平面圖,圖46(b)為先行QFN於 XLVIb—XLVIb線剖開後之斷面圖,圖46(c)為於先行QFN 於XLVIc — XLVIc線剖開後之斷面圖。 圖47(a)為顯示先行LGA之外觀立體圖,圖47(b)為顯示先 行LGA之斷面圖,圖47(c)為先行LGA之平面圖。 發明之實施形態 (第1實施形態) 作為本發明之第1實施形態,對引導框架與使用該引導框 架製造之QFN型樹脂密封型半導體裝置進行說明。 引導框架之說明 首先,對於本發明之第1實施形態所關係之QFN型樹脂密 封型半導體裝置中使用之引導框架(以下,稱之為本實施形 態之引導框架)進行說明。 圖1(a)、圖1(b)皆係例示本實施形態之引導框架之圖。 如圖1(a)所示,本實施形態之引導框架,係於各框架框内 具有:安裝半導體晶片之晶片銲墊106;支持晶片銲墊106之 吊引線105 ;連接在框架上,且被設在晶片銲墊106之周圍之 複數個信號用引線102 ;與晶片銲墊106及框架連接之接地用 連接引線103。另外,信號用引線102具有前端溝102b及後端 溝102c 。 -19- 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐) 裝 訂
560032 發明説明 藉由具有這些溝,於電子機器之配線基板上裝上本實施 形態之樹脂密封型半導體裝置後,不受母基板所施加之彎 曲應力之影響’故防止了金屬細線之斷線。具體來說,於 由於受外力等母基板彎曲時,金屬細線自信號用引線之剥 離於溝部分停止,故防止了金屬細線之斷線。 另外,吊引線105具有臺階部105a,藉由彎曲加工等將晶 片銲塾106支持於較信號用引線1〇2來得高之位置。補充一 下,包圍信號用引線1〇2之兩點划線係樹脂密封型半導體裝 置之外形線107,顯示被樹脂密封之區域。 本實施形態之引導框架,其特征為設置連接於晶片銲墊 106之接地用連接引線1〇3。該接地用連接引線1〇3,於大概 與信號用引線102之前端溝i〇2b相同之位置具有溝103a,於 非近日θ片if塾1 〇6之邵分具有接地用連接引線臺階部1 〇 3 b 〇 圖2(a)、圖2(b)係例示本實施形態之引導框架之圖。如 圖2(a)、圖2(b)以及圖1(b)所示,可任意地選擇接地用連 接引線103之位置與數量。即,如圖1(a)所示,既可以輪流 ;又置接地用連接引線103與信號用引線1〇2,又可以隔著2條 或3條設置接地用連接引線1〇3。如後述般,為了穩定樹脂 始、封型半導體裝置之電氣特性,接地用連接引線1〇3之配置 併不係限足者’但為了更提南其高頻特性,如圖1 ( a )所示 般’儘可能將接地用連接引線103與信號用引線102輪流設置 係較理想者。 補充一下,接地用連接引線103與信號用引線102之間或信 號用引線互相間之間隔並不需要一定,但於實用上講,設
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雄 -20 560032 A7 B7 五、發明説明(18 ) 定間隔一定值且符合現有封裝體之規格係較理想者。 另外,如圖1所示,接地用連接線103中之連接於晶片銲 墊106附近之寬度變細了,這係為了緩和臺階加工接地用連 接引線103時所施加之應力。 圖3係顯示使用本實施形態之引導框架之樹脂密封型半導 體裝置底面之平面圖。如圖3所示,即使使用圖1(a)、圖 1(b)以及圖2(a)、圖2(b)所示之引導框架,可製造其外觀 與先行樹脂密封型半導體裝置相同之樹脂密封型半導體裝 置。即,使用本實施形態之引導框架,不需要改變封裝體 規格,亦不需要隨著封裝體規格之改變進行周邊裝置改 變。 圖4(a)為本實施形態中之引導框架之變形例,圖4(b)為 使用該引導框架製造之樹脂密封型半導體裝置之底面平面 圖。 如圖4(a)所示,接地用連接引線103於寬度方向之寬度, 亦可係兩個信號用引線1 02之寬度與該兩個信號用引線102 間之間隔加起來之寬度。於此我們規定,於接地用連接引 線103中,往晶片銲塾106之方向作長度方向,與他垂直之方 向作寬度方向。如圖4(b)所示,隨著擴大信號用引線102之 擴大,從樹脂密封型半導體裝置之底面上露出來之外部端 子之寬度也隨之擴大。由此可提高裝置之放熱性或接地電 源之穩定性。此外,其他外部端子位置及其寬度皆與先行 相同,故本實施形態樹脂密封型半導體裝置之變形例,可 采用與先行產品相同之規格。補充一下,不采用先行規格 ~ -21 - 本紙張尺度適用中國國家標準(CNS) A4規格(210 X297公釐) 裝 訂
•線 560032 A7 B7 五、發明説明(19 ) 而自由決定露出之外部端子之面積、形狀亦可。 下面,說明引導框架之整個結構。 圖5為用以說明本實施形態之引導框架全體結構之圖。圖 中,自該圖中央至右側之圖為平面圖,左側之圖為自平面 圖中至橫向看去之侧面圖。 如圖5所示,本實施形態之引導框架,係具有:形成有行 列狀設置之多數個框架框之内框架部分,使寬度方向為上 下方向時,沿上邊設置之圓形位置決定孔101b及沿下邊側設 置之橢圓形位置決定孔101c之外框部分101a。在此,於平 面圖中之雙點划線,係顯示以後被施加樹脂密封之區域密 封線108,於側面圖所記載之虛線顯示形成樹脂密封型半導 體裝置之區域。相鄰之框架框内之信號用引線,係互相由 裝置分離線15la内之連接棒支持,呈近似動物脊骨形狀。 本實施形態之引導框架,係所謂之一次多個成型用引導 框架。換言之,係以於一個引導框架上安裝多數個半導體 晶片、進行一次樹脂密封處理、然後進行切割處理、同時 能製造多數個樹脂密封型半導體裝置之引導框架。 於本實施形態之引導框架中,各框架框之大小按照樹脂 密封型半導體裝置之大小變化,一個引導框架所製造之樹 脂密封型半導體裝置之數量也隨之變化。還有,外部端子 數(信號用引線數)與設計也按照樹脂密封型半導體裝置之規 格改變。 補充一下,本實施形態之引導框架之大小,寬度方向(圖 5中上下方向)為3 8〜80mm,長度方向為50〜300mm,厚度約 -22- 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐) 560032 A7 B7 五、發明説明(20 ) 為0.1〜0.4mm之範圍内。可以采用Fe — Ni材與Cu合金等作 引導框架之材料。另外,設置於引導框架上之樹脂密封型 半導體裝置之大小主要為3.0mm X 3.0mm到 2 0.0mm X 2 0 · 0mm 〇 另外,於本實施形態之引導框架上,施加一般與半導體 晶片結合或安裝時需要之電鍍。作為電鍍之材質,采用 Ag,Au以及NiPdAu等。但是,采用Ag電鍍之場合,需要 只於信號用引線上面施加Ag鍍,成為外部端子之信號用引 線之下面上需要施加Sn — Pb鍍或Sn — Bi鍍。補充一下, Au鍍、Pd鍍之厚度為Ιμιη以下,Ag鍍為數μιη以下。 另外,有時將具有耐熱性之聚醯亞胺膜與鋁箔等作為密 封膠帶暫時貼於引導框架之下面上(安裝半導體晶片之那一 面之對面上),以便穩定地進行半導體裝置之樹脂密封工 作,圖5中未示。 下面,簡單說明本實施形態中之引導框架之製造方法。 補充一下,各部件之代號使用了圖1中所示之代號。 首先,於一張板狀之金屬板上施加加壓加工等形成信號 用引線102、晶片銲墊106以及吊引線105。我們暫時稱之為 機械加工(加壓加工)工程。 其次,以蝕刻等方法形成信號用引線102中之前端溝1 02 b 和後端溝102c、以及接地用連接引線103中之溝103a,然後 上移安置晶片銲墊106,以使他上面位於比信號用引線102 之上面來得高。以下,說明此時之引導框架之加工方法。 圖6(a)為使用了施加錐度臺階加工(加壓加工)之引導框架 -23- 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐)
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線 560032 A7 B7 五、發明説明(23 ) 地用連接引線103之臺階部之一部分變細等,可實現QFN之 小型化。. 說明樹脂密封型半導體裝置 圖10(a)顯示使用上述引導框架製造之本實施形態之樹脂 密封型半導體裝置從底面看時之平面圖,圖10(b)為於Xb — Xb剖開線之斷面圖,圖10(c)為顯示外觀立體圖。補充一 下,於本說明書中,以外部端子104露出來之面稱為樹脂密 封型半導體裝置之底面或下面,以相對他之那面稱為上 面。 如圖10(a)〜圖10(c)所示,本實施形態之樹脂密封型半導 體裝置呈近似長方體,具有:晶片銲墊106,沿著裝置底面 之四邊設置之信號用引線102,平行於鄰接之信號用引線 102、且與晶片銲塾106連接之接地用連接引線103,以Ag膏 等黏著劑固定於晶片銲墊106之上面上、並具有電極銲墊之 半導體晶片201,將信號用引線102與半導體晶片201中之電 極銲墊連接之金屬細線202,與晶片銲墊1 06連接之吊引線 (未不)’將晶片婷塾106、半導體晶片201、吊引線、信號用 引線102以及接地用連接引線103之上面密封之密封樹脂 203。另外,接地用連接引線103及信號用引線102之下面以 及側端面露出來,其中從裝置底面上露出來之信號用引線 102之下部作外部端子104。另外,外部端子104之長度比金 屬細線202之長度來得短。 本實施形態之樹脂密封型半導體裝置,其特征為備有連 接於晶片銲墊106之接地用連接引線103。如圖10(b)所示, -26- 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐) 560032 A7 B7 五、發明説明(24 ) 接地用連接引線103由金屬細線202等連接部件連接於半導體 晶片201上之接地用電極銲墊上。另外,接地用連接引線103 之下部之至少一部分,作為接地用外部端子104連接於母基 板等接地用電源上。 因此,於本實施形態之樹脂密封型半導體裝置下,不發 生電荷蓄積等,電氣上很穩定。另外,藉由將接地用連接 引線103作為接地端子使用,於裝置更微細化之場合亦可接 地。 而且,依照本實施形態之樹脂密封型半導體裝置,比先 行樹脂密封型半導體裝置,更可提高其高頻特性。這是因 為流往相同方向之高頻信號容易互相幹涉,故以2個接地用 連接引線103與連接於其之晶片銲墊106包圍1個信號用引線 102,傳到各信號用引線102之高頻信號被隔絕(isolation) 之原因。傳到各信號用引線102之高頻信號被隔絕,結果就 抑制了高頻信號間之互相幹涉。因此,為了提高高頻特 性,較佳者係儘可能交替著設置信號用引線102與接地用連 接引線103。但是,即使於未交替著設置信號用引線102與接 地用連接引線103之場合,與先行樹脂密封型半導體裝置比 , 起來,還改善了高頻特性。補充一下,對于高頻特性,以 後進行說明。 補充一下,為了提高高頻特性,接地用連接引線103不必 連接於半導體晶片201之電極銲墊上。為了使電氣特性穩定 化,較佳者係將接地用所有電極銲墊連接於接地用連接引 線103,故若接地用連接引線103之數量比接地用電極銲墊 -27- 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐) 裝 訂
線 560032 A7 B7 五、發明説明(26 ) 第1變形例從底面看時之平面圖,圖11(b)為該樹脂密封型 半導體裝置於xib — Xlb線剖開後之斷面圖,圖11(c)為顯示 外觀之立體圖。如圖11所示,於信號用引線102之侧端面不 露出來時,只要有接地用引線103就能發揮上述電氣特性及 鬲頻特性。 另外,圖12(a)為本實施形態所關係之樹脂密封型半導體 裝置之第2變形例於Xlla—Xlla線剖開後之斷面圖,圖12(b) 為外觀之立體圖。如圖12(b)所示,亦可從樹脂密封型半導 體裝置之底面之四個角上使吊引線105露出來。補充一下, 於信號用引線102上有了後端溝與前端溝,樹脂密封型半導 體裝置不受於電子機器之配線基板上安裝之後所發生之基 板彎曲應力之影響,也防止金屬細線202之斷線等。 圖13(a)為本實施形態之樹脂密封型半導體裝置之第3變 形例於Xllla —Xllla線剖開後之斷面圖,圖13(b)為外觀之 立體圖。該變形例是晶片銲墊106之底面之一部分從封裝體 之底面露出來之大功率QFN( Power QFN)。本變形例,其放 熱性比本實施形態之樹脂密封型半導體裝置來得高,故很 快地能將從以高頻信號工作之功率半導體裝置發出之熱散 掉。如本變形例所示,於大功率QFN中設置接地用連接引 線103,從高頻特性之觀點來看,係非常好。補充一下,於 本實施例中,較佳者,係使用以部分切斷加工形成之引導 框架。 另外,圖14(a)〜圖14(c)分別為本實施形態之樹脂密封裝 置型半導體裝置之第4變形例、第5變形例以及第6變形例之 -29- 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐) 裝 訂
k 560032 A7 B7 五、發明説明(27 ) 從底面看時之平面圖。如圖14(a)所示,於本實施形態之樹 脂密封型半導體裝置中,接地用連接引線103支持晶片銲墊 106,故不需要設置吊引線105。或如圖14(b)所示,從晶片 銲墊106延向封裝體之四個角之吊引線105與半導體晶片上之 接地用電極銲墊連接,由此吊引線105兼作接地用連接引線 103亦可。另外,如圖14(c)所示,亦可接地用連接引線103 之一部分兼作吊引線105,其他接地用連接引線103設在信號 用引線102之間。此時,接地用連接引線103之數量不限定4 條。 圖15為用以說明本實施形態之樹脂密封型半導體裝置之第 7變形例之平面圖。該圖1 5係顯示於引導框架中之晶片銲墊 106上裝上兩個半導體晶片201,以金屬細線202將信號用引 線102及接地用連接引線103與半導體晶片201中之電極銲墊 或連接用銲墊連接起來之狀態。如圖1 5所示,於晶片銲墊 106之上面上裝上複數個半導體晶片201時,亦可適用本發 明。這樣,所謂多晶片結構,一般於將以不同工程所製造 之素子組合起來成為一個樹脂密封型半導體裝置時采用, 例如存儲器與系統整合晶片時、GaAs半導體素子與由Si構 成之CMOS時等。此時,按照需要以金屬細線等互相連接 裝上之半導體晶片201中之電極銲墊。補充一下,藉由使安 裝金屬細線202之電極銲墊之大小更大,就能使金屬細線 202與各銲墊之連接更踏實。 圖16為顯示相對本實施形態之樹脂密封型半導體裝置之 第7變形例之先行樹脂密封型半導體裝置之平面圖。除了沒 -30- 本紙張尺度適用中國國家標準(CNS) A4規格(210X 297公釐) 裝 訂
線 560032 A7 B7 五、發明説明(28 ) 有設置接地用連接引線103之外,其他結構皆與上述第7變 形例相同。· 於上述例示說明中,以金屬細線202連接電極銲墊與信號 用引線102、或電極銲墊與接地用連接引線103,使用金屬隆 起物代替金屬細線202亦可。此時,將其上面設置隆起物之 半導體晶片201之上面向下,而將他安裝於晶片銲墊106上。 樹脂密封型半導體裝置之高頻特性 下面,說明調查本實施形態之樹脂密封型半導體裝置高 頻特性結果。 圖17為顯示本實施形態之樹脂密封型半導體裝置以及先 行樹脂密封型半導體裝置高頻特性模擬試驗結果之圖。在 此,作為本實施形態之樹脂密封型半導體裝置,使用了圖 15所示之第7變形例,作為先行例,使用了其引腳數與結構 相同之圖16所示之樹脂密封型半導體裝置。補充一下,特 性曲線B(實線)顯示本實施形態之樹脂密封型半導體裝置之 特性,特性曲線A (虛線)顯示先行樹脂密封型半導體裝置之 特性。 從圖1 7得知,本實施形態之樹脂密封性半導體裝置,於 模擬試驗範圍内之所有頻率下,其插入損耗比先行來得 小。例如,於手機通信使用之1.5GHz下,先行樹脂密封型 半導體裝置插入損耗約為0.5dB,本實施形態之樹脂密封型 半導體裝置插入損耗約為〇.4dB。頻率愈高他們之間插入損 耗差距愈大,故可以認為若今後使用1.5GHz以上之高頻信 號,本實施形態之樹脂密封型半導體裝置更發揮其效果。 -31 - 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐) 裝 訂
線 560032 A7 B7 五、發明説明(29 ) 下面,對於本實施形態之樹脂密封型半導體裝置下,改 善高頻特性之理由進行說明。 裝 圖18(a)為顯示先行樹脂密封型半導體裝置中,信號用引線 與半導體晶片連接之連接部分之平面圖及電路圖,圖18(b) 為顯示本實施形態之樹脂密封型半導體裝置中,信號用引 線或接地用連接引線與半導體晶片連接之連接部分之平面 圖及電路圖。於圖18(a)中之左側所示之電路312,係用電 路圖顯示於圖18(a)中之右侧所示之信號用引線302與半導 體晶片401連接之連接部分。同樣,於圖18(b)中之左侧所 示之電路112,係用電路圖顯示於圖18(a)中之右侧所示之 信號用引線102與半導體晶片201連接之連接部分。
如圖18(a)所示,先行樹脂密封型半導體裝置,其信號用 引線302互相鄰接,故高頻信號穿過信號用引線302及金屬細 線402時會產生磁氣,故於出力端子會發生雜音(noise)。與 此相比,於本實施形態之樹脂密封型半導體裝置,其接地 用連接引線103及晶片銲墊1 06之邊包圍一個信號用引線 102,故信號用引線102不受磁場之影響,其抵抗比先行例來 得小。因此,為了提高高頻特性,將接地用連接引線103與 信號用引線102交替設置係較理想者。 下面,說明於本實施形態之樹脂密封型半導體裝置中, 信號用引線下部作外部端子之QFN設置接地用連接引線之意 義。 圖21為顯示本實施形態之樹脂密封型半導體裝置中之插 入損耗與金屬細線(wire)長度間之關係之圖。補充一下,於 -32- 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐) 560032 A7 B7 五、發明説明(30 ) 此使用之金屬細線直徑約為2 0〜30μm,其感應係數一般 為:於0.8GHz時每1mm為InH。 從圖21得知,工作頻率於1.5GHz時,金屬細線之長度增 加1mm,於倒裝片狀態時就發生0. ldB之插入損耗。並且, 頻率愈高金屬細線長度對插入損耗之影響愈大,於2.5GHz 時,金屬細線長度增加1mm,就發生0.3 dB之插入損耗。於 手機中之收信/發信之天線區域所使用之開關(SW)之場 合,O.ldB之插入損耗會導致收信感度之下降,或雜音之發 生。另外,考慮到雜音之影響,提高發信區域(功率放大器) 所送之功率,就使機器進行更多之工作,故發送資訊所需 要之時間變長。補充一下,之所以隨著金屬細線變長、插 入損耗亦隨之變大,係因為大約隨著於金屬細線之長度變 長、感應係數L隨之增加,以Z = j ω L所示之阻抗Z亦隨之變 大,亦插入損耗變大。於此,j為虛數、ω=27Γί (f為頻 率)。 由此可以得知,傳導信號之經路愈長,樹脂密封型半導 體裝置之電氣特性愈不好,尤其係於以高頻信號工作時, 該現象更明顯。 上述例對金屬細線長度之影響進行了說明,對引線來 講,亦與金屬細線相同愈長其插入損耗愈大。下面,對比 較QFN即本實施形態之樹脂密封性半導體裝置,與QFP之高 頻特性進行說明。 圖19(a)為舉例說明本實施形態之樹脂密封型半導體裝置 之平面圖,圖19(b)為於XlXb—XIXb線剖開時之斷面圖,圖 -33- 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐) 裝 訂
560032 A7 發明説明(31
20(a)為顯示設置接地用連接引線之QFp即樹脂密封型半導 體裝置之平面圖,圖20(b)為於圖20(a)XXb —XXb線剖開 時之斷面圖。補充一下,於本實施形態之樹脂密封型半導 體裝置之外部端子104連接基板配線116,於qfp之外部端 子3 04亦連接基板配線3 16。另外,QFp備有由信號用引線 與向密封樹脂4 0 3之外部延長之外部引線3丨7所構成之引線 3 18,信號用引線之一部分成為連接晶片銲墊3〇6之接地用 連接引線319。QFP與本實施形態之樹脂密封型半導體裝置 不同之處係,引線318具有外部引線317,並且外部引線317 之下部成為外部端子304。 裝 訂
線 於圖20(b)所示之QFP,從半導體晶片4〇1傳來之電氣信號 之最t路耘為,從半導體晶片4〇1中之電極銲塾,依次通過 金屬細線402、接地用連接引線319、外部引線317直到基板 配線3 16。與此相比,於本實施形態之樹脂密封型半導體裝 置,信號用引線102之下部成為外部端子,故電氣信號最短 路程,比QFP來得短外部引線317之長度。因此,本實施形 態之樹脂密封型半導體裝置,從半導體晶片到基板配線之 距離大約縮短到QFP之1 / 3。 例如,本實施形態之樹脂密封型半導體裝置,於平面上 確認之場合,信號導通路程為:金屬細線長為Ο %馳、從 接地用連接引線到基板配線之長度為〇 3〇mm,合計 0.80mm ;於QFP中之信號導通路程為:金屬細線長為 0.50mm、從接地用連接引線到外部引線為〇5〇mm、從外部 引線到基板配線為1.4mm,合計2.4〇mm。 -34-
560032 A7 B7 五、發明説明(32 ) 此時,假設每1mm導通路程之感應係數為InH,於上述信 號導通路程之感應係數,於本實施形態之樹脂密封型半導 體裝置下為0.80nH,於QFP下為2.4nH。該感應係數差,比 於圖21研究之範圍來得高得很多。 再者,信號周波愈高感應係數差距愈大,故即使將接地 用連接引線設在QFP中,也不能得到如本實施形態之樹脂密 封型半導體裝置所得到般、良好之高頻特性。也就是說, 於本發明中,藉由於如QFN般信號用引線之下部成為外部端 子之樹脂密封型半導體裝置上設置接地用連接引線,可實 現先行不能得到之具有很優秀高頻特性之樹脂密封型半導 體裝置。 補充一下,實際上於將如上述結構之本實施形態之樹脂 密封型半導體裝置使用於高頻信號工作1 . 5GHz以上之手機 時,使用至少具有一個頻率於1.5GHz以上下放大或衰減功 率之半導體素子之樹脂密封型半導體裝置。這並不限定 QFN,SON與LGA也係同樣者。 樹脂密封型半導體裝置之製造方法 下面,舉例說明對本實施形態之樹脂密封型半導體裝置 之製造方法。 圖22 (a)〜圖22(e)為顯示本實施形態之樹脂密封型半導體 裝置之製造工程之斷面圖。 首先,於圖22 (a)所示之工程下,准備於下面側貼上密封 膠帶之引導框架。該引導框架,已施加上移加工或下移加 工等3維加工,至少備有晶片銲墊106、於上面側具有溝之 -35- 本紙張尺度適用中國國家標準(CNS) A4規格(210X 297公釐) 裝 訂
560032 A7 B7 五、發明説明(33 ) 信號用引線102以及密封膠帶111。 其次,於圖22(b)所示之工程下,於晶片銲墊106之上面 上用Ag等黏著劑固定半導體晶片201。 接著,於圖22(c)所示之工程下,以金屬細線202電氣連接 半導體晶片20 1中之電極銲墊與信號用引線102之前端部以 及接地用連接引線(未示)之任意部分。 之後,於圖22(d)所示之工程下,使用密封樹脂203密封信 號用引線102及接地用連接引線之上面,晶片銲墊106及半 導體晶片。進一步進行說明本工程。 圖23(a)、圖23(b)分別用以說明圖22(d)所示之樹脂密封 工程之斷面圖、與平面圖。 如圖23 (a)所示,於樹脂密封工程下,到圖22(c)工程完 成了之樹脂密封型半導體裝置設在樹脂密封模具206a、206b 之間,以密封模具206a、206b將他夾起來。其次,以柱塞 207攙入到樹脂存放加熱筒2 08中之熱硬化性環氧樹脂。被 攙入了之樹脂,由預先加熱到150〜200°C之模具之熱溶融成 液狀,經過樹脂流道205,從閘門204注入到設置樹脂密封型 半導體裝置之模槽(die cabity密封模具)中。此時,空氣 從處於從模槽來看閘門204相反之排氣口 209、或從引導框 架中之空氣溝2 10出去,由此形成沒有氣泡(void,硬化樹脂 中之氣泡)之樹脂密封型半導體裝置。此後,以柱塞207以 及樹脂密封模具206a、206b進行加壓,給樹脂進行硬化處 理。完成樹脂密封處理之後,除去樹脂流道205,揭下密封 膠帶111。補充一下,於樹脂密封工程中,使用以加壓加工 -36- 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐) 裝 訂
k 560032 A7 B7 五、發明説明(34 ) 形成貧階< 引導框架之場合,藉由於接地用連接引線1〇3或 吊引線開始高起之那部分之下面形成溝,可防止密封樹脂 進入到密封膠帶111與外部端子104之間。 其次’於圖22( e)所示之工程下,於互相鄰接之半導體裝 置之信號用引線之間所在之裝置分離線15 la上切斷,由此製 造本實施形態之樹脂密封型半導體裝置。下面,對該製品 分離工程更詳細地進行說明。 圖24用以說明圖22(d)所示之完成樹脂密封工程之後之引 導框架整體結構之圖,圖2 5 (a )用以說明製品分離工程之平 面圖,圖25(b)用以說明於XXVb—XXVb線剖開之斷面圖, 圖25(c)為斷面部分之擴大斷面圖。 圖25(a)所示,於製品分離工程下,將於圖24所示之引導 框架貼於被保持環153保持之裝置貼附用密封膠帶152上。在 此,將樹脂密封之引導框架,使他下面(外部端子侧)朝上貼 在裝置貼附用密封膠帶152上。由此很容易地能調整分離製 品之裝置分離線151a之位置,同時能於切斷引線框架時使金 屬毛刺發生得很少。然後,如圖25(c)所示,以裝置分離用 刀片151沿裝置分離線151a切斷被樹脂密封之引導框架。此 時,進入裝置貼附用密封膠帶152中1 〇〜20μιη。由此可使樹 脂密封型半導體裝置之切斷面很幹淨。其次,從裝置貼附 用密封膠帶152揭下樹脂密封型半導體裝置。由此同時獲得 多數個樹脂密封型半導體裝置。在此,裝置貼附用密封膠 帶152,係於厚度ΙΟΟμπι〜200μηι之基材上,塗上厚度數 μπι〜十數μηι之丙烯系黏著劑者,由UV照射其黏著能力下 -37- 本紙張尺度適用中國國家標準(CNS) Α4規格(210X297公釐)
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560032 A7 B7 五、發明説明(35 ) 降,故不將樹脂密封型半導體裝置弄傷就能揭下。 補充一下,於圖22( c)所示之工程中,一般使金屬細線202 互相不交叉,交叉亦可。 圖26( a)為使金屬細線互相交叉之本實施形態之樹脂密封 型半導體裝置之第8變形例於包括XXVI — XX VI線與XXVI’ —XXVI’線剖開之斷面圖,圖26(b)為該變形例之引導框架 之平面圖。金屬細線202從信號用引線102伸展到電極銲墊 時,一般以弧光(高電壓之火花)將金屬細線202之前端部分 溶化成球狀,先將該部分焊接到電極銲墊,然後將金屬細 線202之另一端連接到信號用引線102。在此我們將首先連接 之一側稱為第1側、將其次連接之一側稱為第2侧。於第1側 形成金屬球,故於連接點之金屬細線202高起角度近似為垂 直。對此相比,於第2側將金屬細線擦著連接,高起時之角 度變小。於是,於本變形例中,將第1側作信號用引線 102,第2側作電極銲蟄,由此使連接到電極鮮塾侧之金屬 細線202之高度變低。因此,如圖26(a)之右半部分所示, 其次將第1側作電極銲墊伸展金屬細線202,由此可能使金 屬細線202交叉。 於本變形例中,藉由使金屬細線202交叉,抑制通過該金 屬細線202高頻信號間之幹涉,減少插入損耗。 (第2實施形態) 作為本發明之第2實施形態,對QFN之一個變形例即 HQFN(具有散熱片 Quad Flat Non — leaded Package)進行說 明。 -38- 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐) 裝 訂
k 560032 A7 B7 五、發明説明(36 ) 圖27(a)為本實施形態之樹脂密封型半導體裝置即HQFN 從底面看時之平面圖,圖27(b)為該樹脂密封型半導體裝置 於XXVIIb—XXVIIb線剖開後之斷面圖,圖27(c)為該樹脂 密封型半導體裝置於XXVIIc— XXVIIc線剖開後之斷面圖。 圖27(a)〜圖27(c)所示,本實施形態之樹脂密封型半導體裝 置近似為長方體,具有:晶片銲墊126,沿著裝置底面之四 邊設置之信號用引線122,與晶片銲墊126連接之接地用連接 引線123(未示),以黏著劑固定於晶片銲墊126之上面上、 並具有電極銲墊之半導體晶片221,連接信號用引線122與 半導體晶片22 1中之電極銲墊之金屬細線222,與晶片銲墊 連接之吊引線125,密封晶片銲墊126、半導體晶片221、吊 引線125、信號用引線122以及接地用連接引線123之上面之 密封樹脂223。另外,晶片銲墊126、接地用連接引線123及 信號用引線122之下面以及側端面露出來,其中從裝置底面 上露出來之信號用引線122之下部具有作為外部端子124之功 lb 。 於本實施形態之樹脂密封型半導體裝置中,與第1實施形 態所關係之樹脂密封型半導體裝置不同,安裝半導體晶片 221之晶片銲墊126之下面露出到外邊,以便提高放熱性能。 包括晶片銲墊126之露出面之樹脂密封型半導體裝置之底 面,直接與母基板焊接。另外,如圖27(c)所示,從樹脂密 封型半導體裝置之底面之四個角露出來之吊引線125,與晶 片銲墊126連接,同時與半導體晶片221之接地用電極銲墊 電氣連接,他兼作接地用連接引線123。 -39- 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐) 裝 訂
560032 A7 B7 五、發明説明(37 ) 本實施形態之樹脂密封型半導體裝置,設有接地用連接 引線123,故其電氣特性很穩定。再者,與第1實施形態相 同,信號用引線122之間設有接地用連接引線,故能抑制通 過信號用引線122之高頻之間所發生之幹涉,故其插入損耗 比先行樹脂密封型半導體裝置來得小。特別於將信號用引 線122與接地用連接引線123交替設置時,該效果很大。 圖28(a)〜圖28(c)用以說明本實施形態之樹脂密封型半導 體裝置中於接地用連接引線之位置從底面看時之平面圖。 如圖28(a)所示,於本實施形態之樹脂密封型半導體裝置 中,亦可不設吊引線125而將接地用連接引線123設在兩個信 號用引線122之間,亦可如圖28(b)所示設置吊引線125兼作 接地用連接引線。另外,如圖28(c)所示,個別設置吊引線 125與接地用引線123亦可。當然可以將吊引線125兼作接地 用連接引線123,且將接地用連接引線123設在信號用引線 122之間。 下面,說明本實施形態之樹脂密封性半導體裝置所使用 之引導框架加工方法。HQFN,一般其晶片銲墊126之下面 從底面露出來,故為了使半導體晶片221安裝之位置比信號 用引線之上面來得高,需要進行抬起接地用連接引線123中 與晶片銲墊126之連接部分附近之抬起加工。 圖29(a)為使用施加錐形臺階加工之引導框架之本實施形 態樹脂密封型半導體裝置之斷面圖,圖29(b)、圖29(c)皆為 •引導框架加工工程之斷面圖。補充一下,圖29(a)顯示圖 28(a)中之於XXIX — XXIX線剖開後之斷面圖。 -40- 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐) 裝 訂
560032 A7 B7 五、發明説明(41 ) 樹脂密封型半導體裝置於XXXVI— XXXVI線剖開之斷面圖。 本實施形態之樹脂密封型半導體裝置,其晶片銲墊之整個 下面露出來,係於SON中提高其放熱性能者。 如圖36(a)〜圖36(d)所示,本實施形態之樹脂密封型半導 體裝置,其底面為方形,具有:整個下面露出來之晶片銲 墊136,沿著底面長度方向設置兩邊之信號用引線(未示), 沿著底面長度方向之兩邊平行於信號用引線設置、且連接 於晶片銲墊136之接地用連接引線133,安裝於晶片銲墊136 之上面上、且具有電極銲墊之半導體晶片231,將電極銲墊 與信號用引線或接地用連接引線133之間電氣連接之金屬細 線232,將信號用引線、接地用連接引線133以及晶片銲墊之 上面、半導體晶片231密封之密封樹脂233。還有,信號用引 線與接地用連接引線133交替排成一行。信號用引線之下部 與接地用連接引線133之下部皆成為外部端子134。另外,接 地用連接引線133中之晶片銲墊136之旁邊設有臺階。 本實施形態之樹脂密封型半導體裝置與QFN即第1及第2 實施形態之樹脂密封型半導體裝置不同之處為,外部端子 134只處於底面往長度方向之兩邊上,隨之可確保將晶片銲 墊136之兩端部作接地端兼作加強端子利用之空間。因此, 於本實施形態之樹脂密封型半導體裝置中,設置自由度較 大。 如上所述之HSON,還可通過至少設置1個接地用連接引 線133,獲得電氣性上之穩定。還有,以接地用連接引線133 於晶片銲墊136包圍信號用引線,由此有效地可減少於高頻 -44- 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐) 裝 訂
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40(b)為先行LGA用引導框架之4等分之平面圖,圖4〇(c) 為使用於本實施形態之樹脂密封型半導體裝置之引導框架 之左半部之斷面圖,圖40(d)為使用于本實施形態之樹脂密 封型半導體裝置之引導框架之4等分之平面圖。圖4〇(a)、 圖40(c)皆顯示於通過信號用引線或接地用連接引線與晶片 銲墊4線剖開足斷面圖。補充一下,為簡單起見使用該引 導框架之樹脂密封型半導體裝置之結構,除其引導框架之 外之部件以虛線表示。 如圖40(c)、圖40(d)所示,本實施形態之引導框架具 有·近似長方體之晶片銲墊146,連接框架(未示)之複數個 信號用引線142,連接框架及晶片銲墊146之複數個接地用連 接引線143 ’支持晶片銲|146、且於樹脂密封型半導體裝置 中作加強焊盤之吊引線145。信號用引線142之前端部(晶片 銲墊一側)及接地用連接引線143之晶片銲墊附近之上面, 分別比後端部分(框架一側)面積來得大,厚度也來得厚。 從比較圖40(a)、圖40(b)與圖40(c)、圖40(d)可以得知, 本實施形態之引導框架,與先行不同之處為係設置接地用 連接引線14〇。在此,晶片銲·塾146之下面很平坦,但下面之 中央部往上凹下亦可。 補充一下,以触刻法施加加工本實施形態之引導框架。 圖41(a)為本實施形態之樹脂密封型半導體裝置從底面看 時之平面圖,圖41(b)為本實施形態之樹脂密封型半導體裝 置之透視平面圖及斷面圖。在此,於圖41(b)之平面圖下, 為簡單起見,顯示了信號用引線142、接地用連接引線丨4 3
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560032 A7 B7 五、發明説明(45 ) 以及半導體晶片241。 如圖41(a)、圖41(b)所示,本實施形態之樹脂密封型半 導體裝置,例如具有長方形底面,備有:晶片銲墊146 ;安 裝於晶片銲墊146上、且具有電極銲墊2 41 a之半導體晶片 241 ;配置於晶片銲墊146之周圍之信號用引線142 ;配置於 晶片銲墊146、且連接晶片銲墊146之接地用連接引線143 ; 連接從電極銲墊241a至信號用引線142之間、以及從接地用 電極銲墊241a至接地用連接引線143之間之金屬細線242 ; 支持晶片銲墊1 46之吊引線1 45 ;密封晶片銲墊146、半導體 晶片241、金屬細線242以及吊引線145,同時作外部端子144 使信號號用引線142及接地用連接引線143之下部中之至少 一部分露出著密封之密封樹脂243。從本實施形態之樹脂密 封型半導體裝置之底面上,包圍著晶片銲墊146排成兩行之 外部端子露出來,呈先行LGA相同之外觀。另外,吊引線 145之下部之至少一部分從裝置底面上露出來,成為其面積 比外部端子144來得大之加強焊盤144a。加強焊盤144a,係 用以防止於本實施形態之外部端子144與母基板之端子連接 時所發生之剥離。再者,於本實施形態下,以金屬細線242 接地用電極銲墊24la與吊引線145連接,吊引線145兼作接地 用連接引線。另外,信號用引線1 42與接地用引線143交替 被配置。補充一下,於本實施形態下,需要確保伸展金屬 細線242之空間,故設置晶片銲墊時,不使他與從平面來看 第2行(内側)之外部端子重疊。 本實施形態之樹脂密封型半導體裝置,設有取接地用之 -48- 本纸張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐) 裝 訂
k 560032 A7 B7 五、發明説明(46 ) 接地用連接引線,由此可電氣特性之安定化。 另外,本實施形態之樹脂密封型半導體裝置,其LGA與 QFN或SON相同,基本上其外部端子144之長度(長度方向之 長度)比金屬細線242來得短,故藉由設置了接地用連接引線 143,其高頻特性提高了。尤其於本實施形態下,以接地用 連接引線143、吊引線145以及晶片銲墊146包圍信號用引線 142,故於工作時有效地減少高頻信號間之幹涉。結果,其 高頻特性明顯地比先行樹脂密封型半導體裝置提高了。 如上所述,本實施形態樹脂密封型半導體裝置,其電氣 特性很穩定、且其高頻特性提高,故使用於例如使用高頻 之通信系統用機器等係較理想者。 補充一下,於本實施形態中,將金屬細線242作連接電極 銲墊24 la與接地用連接引線143以及信號用引線142之部 件,亦可使用金屬隆起物代替他。此時,使半導體晶片241 之上面與晶片銲墊146之上面面對面。 補充一下,於本實施形態之樹脂型半導體裝置中,除了 晶片銲墊146之中心部外之下面於裝置之底面露出,亦可晶 片銲墊整個下面皆露出來,亦可整個晶片銲墊不露出。 於本實施形態之樹脂密封型半導體裝置下,所有接地用 連接引線143與接地用電極銲墊241a連接,若接地用連接引 線143之數量比接地用電極銲墊241a來得多,即使剩下了之 接地用連接引線143不與接地用電極銲墊24 la連接,其電氣 特性併不受任何影響。 補充一下,於本實施形態之樹脂密封型半導體裝置下, -49- 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐) 560032 A7 B7 五、發明説明(47 ) 交替設置了接地用連接引線143於信號用引線142,亦可有 一部分接地用連接引線143互相鄰接。以接地用連接引線143 於晶片銲墊146包圍至少一個信號用引線142,就可比先行 LGA更提高其高頻特性。 另外,於本實施形態下,吊引線145兼作接地用連接引線 143,亦可吊引線145不與接地用電極銲墊24 la連接。 另外,本實施形態之樹脂密封型半導體裝置之底面為近 似長方形,亦可其他形狀。 另外,本實施形態之樹脂密封型半導體裝置之外部端子 144為近似橢圓形,按照使用之引導框架之形狀,亦可改變 如近似長方形等其他形狀。 另外,如圖26所示,本實施形態之樹脂密封型半導體裝 置,通過將金屬細線242交叉謀求高頻特性之提高。 本實施形態之樹脂密封型半導體裝置之變形例 下面,說明外部端子排成3行之本實施形態之樹脂密封型 半導體裝置之變形例。 圖42(a)為顯示先行LGA用引導框架之變形例之左半部分 之斷面圖,圖42(b)為顯示先行LGA用引導框架變形例4等 分之平面圖,圖42(c)為使用於本實施形態所關係之樹脂密 封型之引導框架之左半部分之斷面圖,圖42(d)為使用于本 實施形態所關‘係之樹脂密封型變形例之引導框架4等分之平 面圖。圖42(a)圖42(c)皆顯示於通過信號用引線或接地用連 接引線與晶片銲墊之線剖開之斷面圖。補充一下,為簡單 起理解該使用引導框架之樹脂密封型半導體裝置之結構, -50- 本纸張尺度適用中國國家標準(CNS) A4規格(210X297公釐) 裝 訂
•線 560032 A7 B7 五、發明説明(48 ) 以虛線顯示引導框架之外之部件。 本變形例之引導框架,其結構與本實施形態之引導框架 大概相同,不同之處為,信號用引線142及接地用連接引線 143之底面中作樹脂密封型半導體裝置之外部端子144之部 分排成3行。第3行(最靠近晶片銲墊之一侧)之外部端子成 為接地用端子。 圖4 3為本實施形態所關係之樹脂密封型半導體裝置之變 形例從底面看時之平面圖,以及該變形例之斷面圖。圖44(a) 為本實施形態所關係樹脂密封型半導體裝置變形例之外觀 立體圖,圖44(b)為該變形例從底面看時之平面圖。補充一 下,為簡單起見,於圖43中之平面圖中顯示的係,信號用 引線142、接地用連接引線143、吊引線以及半導體晶片241 之透視圖。 本實施例與本實施形態之樹脂密封型半導體裝置不同之 處為,配置於晶片銲墊周圍之外部端子144排成3行。因 此,與大小相同之樹脂密封型半導體裝置相比,本實施形 態可設置更多之外部端子。除了外部端子之外之結構與圖 4 1所示之本實施形態之樹脂密封型半導體裝置相同,故省 略其說明。 補充一下,於本實施形態之變形例中,半導體晶片24 1之 大小從平面來看也需要不到外部端子144之第2行,但到第3 行之大小亦可。 依照本變形例,如此能使其電氣特性穩定,使其高頻特 性提高,同時能實現外部端子數量變多之樹脂密封型半導 -51 - 本纸張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐) 560032 A7 B7 五 發明説明(49 ) 體裝置。 另外,於本實施例中,於裝置底面上露出之外部端子排 成3行,按照改變使用之引導框架之形狀,亦可使外部端子 排成4行以上。 另外,於本實施例中,使用金屬隆起物代替金屬細線242 亦可。 -52- 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐)
Claims (1)
- 560032 第091115421號專利申請案 ^ 中文申請專利範圍替換本(92年8月) C8 D8 々、申請專利範圍1. 一種引導框架,其包含: _ 框架; 用以將半導體晶片裝於其上面之晶片銲墊; 與上述框架連接之複數個信號用引線;以及 與上述框架以及上述晶片銲墊連接之至少一個接地用 連接引線,其中 上述信號用引線及上述接地用連接引線之下部之至少 一部分成為外部端子。 2. 如申請專利範圍第1項所記載之引導框架,其中: 至少將上述信號用引線與上述接地用連接引線之一部 分交替配置。 3 .如申請專利範圍第1項所記載之引導框架,其中: 各接地用連接引線具有臺階部,且 於上述臺階部高起部分之下面側形成溝。 4 .如申請專利範圍第1項所記載之引導框架,其中·. 上述晶片銲墊之上面之至少一部分,比上述信號用引 線之上面來得高0 · 03mm以上、引導框架厚度之3/4 以下。 5·如申請專利範圍第3項所記載之引導框架,其中: 上述接地用連接引線之臺階部,係以從加壓加工、部 分切斷加工、壓擠加工或蝕刻法中選擇一個以上之加工 法形成者。 6·如申請專利範圍第3項所記載之引導框架,其中: 從上述晶片銲墊到上述接地用連接引線臺階部之那區 本紙張尺度適用中國國家標準(CNS) A4規格(210X 297公釐) 560032域之上面實質上為平坦, 於上述臺階部之下部形成臺階。 7.如申請專利範圍第6项所記載之引導框架,其中: 由加壓加工及壓擠加工形成上述臺階部, 上述臺階部於寬度方向之尺寸比上述接地用連接引線 於寬度方向之尺寸來得大。8·如申請專利範圍員所記載之引導框架,其中: 上述臺階部之至少-部分於寬度方向上之尺寸比上述 接地用連接引線巾除了上述臺階料之部分於寬度方向 之尺寸小。 9·如申請專利範圍第1項所記載之引導框架,其中: 進一步備有支持上述晶片銲墊之吊引線。 訂 10·如申請專利範圍第1項所記載之引導框架,其中: 至少一個於上述接地用連接引線之寬度方向之尺寸不 比上述信號用引線於寬度方向之尺寸兩倍小。1 1 .如申請專利範圍第丨項所記載之引導框架,其中 進一步備有支持上述晶片銲墊之吊引線, 於上述吊引線之下部中至少一部分成為加強外部端子 之加強焊盤, 上述外部端子於上述晶片銲墊之周圍排成2行以上。 12·—種樹脂密封型半導體裝置,其中 備有·晶片鮮塾; 被安裝於上述晶片銲墊之上面上且具有接地用銲墊與 電極銲墊之半導體晶片; -2- 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐) 560032 A8 B8被设在上述晶片銲塾之周圍之信號用引線; 連接於上述晶片銲墊上之接地用引線; 連接部件;及 密封上述半導體晶片、晶片銲墊以及連接部件且使上 述信號用引線及接地用連接引線之下部之至少一部分作 為外部端子露出來之密封樹脂。 13.如申請專利範圍第12項所記載之樹脂密封型半導體裝 置,其中: 上述連接部件,係將從上述信號用引線到上述電極銲 墊<間、以及從至少一個上述接地用連接引線到上述接 地用銲墊之間連接。 η·如申請專利範圍第12項所記載之樹脂密封型半導體 置,其中: 、至少-個上述信號用引線’係、以鄰接之上述接地用連 接引線與上述晶片鲜塾包圍。 15.如申請專利範圍帛12項所記載之樹脂密封型 置,其中: 心衣 上述連接部件為金屬細線, 上述外部端子之長度比上述金屬細線來得鲈。 專利範圍帛所記載之樹脂密封型半導體 逆一灭爾百運接於上述晶片銲墊上之吊引線。 17·如申請專利範圍第16項所記載之樹脂密封型 置,其中 $ 本紙張尺度適標準(CNS) Μ規格(210χ297公f裝 線-3 - 560032 A8 B8 C8 ______D8 六、申請專利範圍 上述吊引線與上述接地用銲墊以上述連接部件連接。 18·如申請專利範圍第12項所記載之樹脂密封型半導體裝 置,其中: 上述晶片銲塾中至少一部分露出來, 、上述接地用連接引線中與上述晶片銲墊之連接部附近 之下面往上彎曲。 如申明專利範園第1 8項所f己載之樹脂密封型半導體裝 置,其中: 上述接地用連接引線中與上述晶片銲墊之連接部附近 之上面往上彎曲。 20·如申請專利範圍第12項所記載之樹脂密封型半導體裝 置,其中: 上述連接部件為金屬隆起物, 上述半導體晶片之主面面對晶片婷塾之上面。 21·如申請專利範圍第16項所記載之樹脂密封型半導體裝 置,其中: 上述吊引線作上述外部端子之加強端子, 上过外4 ^子之形狀從為圓形、近似橢圓形以及近似 長方形中選擇之一。 22·如申請專利範圍第21項所記載之樹脂密封型半導體裝 置,其中: 上述外部端子於上述晶片銲墊之周圍排成2行以上。 23·如申請專利範圍第12項所記載之樹脂密封型半導體裝 置,其中: 本紙張尺度適財_家鱗(CNS) A4規格^㈣的公董) 560032 A8 B8 C8 D8 六、申請專利範園 裝於上述半導體晶片上之半導體元件中,至少一個於 1.5GHz以上之頻率下放大或衰減功率。 2 4 · —種引導框架之製造方法,係包括晶片銲墊、與連接於 上述晶片銲墊之接地用連接引線之引導框架之製造方 法,其中: 包括:工程(a),於上述接地用連接引線中與上述晶 片銲墊之連接部旁邊之下部形成複數個溝;以及 工程(b),以加壓加工使上述複數個溝之間往上彎曲 形成臺階部。 25.—種樹脂密封型半導體裝置之製造方法,係備有晶片銲 墊、連接於上述晶片銲墊之接地用連接引線、以及具有 接地用銲墊之半導體晶片,且上述接地用連接引線之下 部之一部分作外部端子用之樹脂密封型半導體裝 造方法,其中: 包括工程(a),於包括與晶片連接部之旁邊具有往上 彎曲之臺階部、且於上述臺階部高起部分之下部形成溝 之有接地用連接引線之引導框架之下面側貼密封膠帶;/ 工程(b),上述工程(&)後,形成連接上述半導體晶片 中之接地用銲墊與上述接地用連接引線之連接部^阳〆 及 α ’以 工程(c),上述工程(b)後進行樹脂密封 樹脂覆蓋外部端子。 而不使密封 m k 訂-5- 本紙張尺度適用中國國家標準(CNS) A4^(21〇X297/>*) '~ -------- —
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JP3895570B2 (ja) * | 2000-12-28 | 2007-03-22 | 株式会社ルネサステクノロジ | 半導体装置 |
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TW498443B (en) * | 2001-06-21 | 2002-08-11 | Advanced Semiconductor Eng | Singulation method for manufacturing multiple lead-free semiconductor packages |
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US20030038358A1 (en) * | 2001-08-22 | 2003-02-27 | Walton Advanced Electronics Ltd | Semiconductor package without outer leads |
US7215012B2 (en) * | 2003-01-03 | 2007-05-08 | Gem Services, Inc. | Space-efficient package for laterally conducting device |
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2002
- 2002-01-09 JP JP2002002771A patent/JP2003204027A/ja active Pending
- 2002-06-08 KR KR20020032120A patent/KR100541494B1/ko active IP Right Grant
- 2002-06-19 US US10/173,900 patent/US8193091B2/en not_active Expired - Fee Related
- 2002-07-11 TW TW91115421A patent/TW560032B/zh not_active IP Right Cessation
- 2002-08-30 EP EP20020019488 patent/EP1328023B1/en not_active Expired - Fee Related
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103094238B (zh) * | 2011-10-31 | 2017-07-14 | 索尼公司 | 引线框架和半导体器件 |
CN105304600A (zh) * | 2014-06-30 | 2016-02-03 | 瑞萨电子株式会社 | 半导体装置以及半导体装置的制造方法 |
US10553525B2 (en) | 2014-06-30 | 2020-02-04 | Renesas Electronics Corporation | Semiconductor device and manufacturing method of semiconductor device |
CN105304600B (zh) * | 2014-06-30 | 2020-06-26 | 瑞萨电子株式会社 | 半导体装置以及半导体装置的制造方法 |
Also Published As
Publication number | Publication date |
---|---|
EP1328023A2 (en) | 2003-07-16 |
KR20030060737A (ko) | 2003-07-16 |
US8193091B2 (en) | 2012-06-05 |
KR100541494B1 (ko) | 2006-01-16 |
US20030127711A1 (en) | 2003-07-10 |
EP1328023A3 (en) | 2004-12-22 |
JP2003204027A (ja) | 2003-07-18 |
EP1328023B1 (en) | 2012-02-01 |
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