JP6673012B2 - 半導体装置およびその製造方法 - Google Patents
半導体装置およびその製造方法 Download PDFInfo
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- JP6673012B2 JP6673012B2 JP2016104791A JP2016104791A JP6673012B2 JP 6673012 B2 JP6673012 B2 JP 6673012B2 JP 2016104791 A JP2016104791 A JP 2016104791A JP 2016104791 A JP2016104791 A JP 2016104791A JP 6673012 B2 JP6673012 B2 JP 6673012B2
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Description
実施の形態1における半導体装置の製造方法について説明する。図1は、実施の形態1の半導体装置の製造方法で製造された半導体装置を示す平面図である。半導体装置100は、半導体素子1a、1b、1c、1dがリードフレーム2上に、はんだあるいは金属ワイヤー3等で電気的に接続され、樹脂4により封止されることで構成される。半導体素子は、例えば、IGBT、ダイオード、MOSFET等が一例として挙げられる。
図4及び図5に基づき、リードフレームについて説明する。リードフレーム2は、個々の半導体装置に対応した回路パターンが、個々の電極端子が延在する方向が側面となるように一列に並ぶ、つまり、複数の回路パターンが帯状に連なるように配列される。配列方向に対する側面部分は、後述するリードフォーミング工程において、折り曲げられる部位に対応する。リードフレーム2の材質としては、例えば銅が挙げられるが、他の導電性に優れた金属材料でも良い。
一方、ダイパッド部2bは半導体素子をリードフレームに搭載する際の搭載部分である。タイバー2cは、電極端子部2aにおいて、隣り合う二つの各電極端子の間に配設され、各電極端子を繋いでいる。すなわち、各電極端子部2aと枠部とが、個々の電極端子が延在する方向に対して直角をなす方向に延在する各タイバー2cによってそれぞれ繋がれている。また、リードフレーム2の各半導体装置に対応する各タイバー2cは、リードフレーム全体としてみた場合、配列方向に、直線状となるようにそれぞれ配置されている。
なお、図5のフレーム枠2eとは、二つの破線の間で囲まれている範囲を指し、複数の半導体装置をリードフレーム単位で搬送する際に利用する部位である。ここでは、フレーム枠2eを明示するために、図4ではなく、図5中に破線で示している。さらに、フレーム枠2eで囲まれる領域は、仕切り枠2fにより各半導体装置に対応する個々の回路パターン領域に分けられている。配列方向において、仕切り枠2fはタイバー2cと交差して連結される。吊リード2dは、枠部(フレーム枠2e及び仕切り枠2f)とダイパッド2bとの間に設けられ、リードフレーム単位で製造される各工程において、仕切り枠2fおよびタイバー2cと共働しつつ、ダイパッド部2bを支える機能を果している。
フレーム枠2eから、電極端子部2a、タイバー2c、及び仕切り枠2fを切り離す位置は、D−D’線、E−E’線、F−F’線、G−G’線、H−H’線、I−I’線であり、これらの線に沿ってリードフレームを切断する。なお、切断方法はパンチング等により行う。吊リード2dが、仕切り枠2fおよびタイバー2cと共働しつつフレーム枠からダイパッド部2bに繋がることによって、ダイパッド部2bを支えている。したがって、上記の切り離し位置で切断する際に、電極端子部2aあるいはダイパッド部2bが切断によりリードフレームから落下することを防止できる。
電極端子部2aは、タイバー2cよりも内側(半導体素子側)で、かつ、金属ワイヤーと電極端子部2aとの接続位置よりも外側の範囲内で屈曲させる。電極端子部2aの屈曲後は、図9のように電極端子部2aが半導体素子の上面に延在する。なお、電極端子部2aの屈曲方法としては、ローラー曲げまたはカム曲げのいずれを使用してもよい。
挟み込み後、電極端子部2aの一端側から液状の樹脂を注入する。可動クランプを利用した製造方法によれば、液状の樹脂が、電極端子部2aの他端側に流出するのを抑制することが可能となる。つまり、電極端子部2aの他端(先端部)が、トランスファーモールド樹脂となる液状の樹脂に付着したり埋没したりすることをタイバー2cなどによって抑制することが可能となる。
なお、樹脂封止工程では、ダイパッド部2bを支える吊リード2dを設けることによって、樹脂注入中における樹脂の圧力によるダイパッド部の浮き沈みを抑制することができる。
なお、吊リード2dをカットする際に、半導体装置100を構成する樹脂4から吊リード2dを引き抜いてもよい。吊リード2dが樹脂内部から引き抜かれてカットされるため、電極端子の先端部から吊リードまでの絶縁距離を長くすることができる。
Claims (6)
- ダイパッドと前記ダイパッドの周囲に設けられた電極端子部とを有し帯状に配列された複数の回路パターンと、前記電極端子部を構成する複数の電極端子の間を接続しつつ前記回路パターンの配列方向に延在するタイバーと、前記各回路パターン間に仕切り枠を有し前記複数の電極端子及び前記タイバーの両端部に接続され前記回路パターンを囲むように配置された枠部と、前記枠部と前記ダイパッドとの間を前記回路パターンの配列方向に接続する吊リードと、を有するリードフレームにおいて、前記ダイパッドに半導体素子を接合するダイボンディング工程と、
前記半導体素子と前記複数の電極端子とを金属ワイヤーによって電気的に接続するワイヤーボンディング工程と、
前記複数の電極端子の端部と前記枠部との接続部分、前記回路パターンの配列方向の両端部における前記枠部と前記タイバーとの接続部分、前記回路パターン間における前記枠部で前記タイバーとの接続部位から前記回路パターンの配列方向に延在する前記枠部の部位までの間の接続部分、をそれぞれ切断し、前記電極端子部における前記タイバーと前記ダイパッドとの間の部位を屈曲させて前記タイバーを含む前記電極端子部の端部を前記半導体素子の上面が向いている方向に延在せしめるリードフォーミング工程と、
前記電極端子部で前記タイバーより前記半導体素子の上面が向いている方向に位置する部位および前記タイバーが露出するように前記リードフレームを樹脂封止する樹脂封止工程と、
前記各回路パターン間をそれぞれ切断して個々の半導体装置へと分離するリードカット工程と、
を備える半導体装置の製造方法。 - 前記樹脂封止工程において、前記リードフォーミング工程を経たリードフレームを金型の内部に配置し、前記金型の上部に設けられ配列方向が長手となる矩形状の開口を呈する端子孔を通して前記金型外部に露出した部位を可動クランプによってクランプすることにより前記タイバーを含む部位を挟持するとともに、前記可動クランプの先端部を前記端子孔に嵌合せしめることを特徴とする請求項1に記載の半導体装置の製造方法。
- 前記吊リードに、配列方向と直交する方向に平行な段差を設けることを特徴とする請求項1又は2に記載の半導体装置の製造方法。
- 前記吊リードの厚みが0.4〜0.7mmであり、配列方向と直交する方向の幅が10〜20mmであることを特徴とする請求項1〜3のいずれか1項に記載の半導体装置の製造方法。
- ダイパッドと前記ダイパッドの周囲に設けられた電極端子部とを有し帯状に配列された複数の回路パターンと、前記電極端子部と接続して前記電極端子部と前記ダイパッドとを囲むように配置された枠部と、前記枠部と前記ダイパッドとの間を接続する吊リードと、
を有するリードフレームにおいて、前記ダイパッドに半導体素子を接合するダイボンディング工程と、
前記半導体素子と前記電極端子部とを金属ワイヤーによって電気的に接続するワイヤーボンディング工程と、
前記電極端子部と前記枠部との接続部位を切断し、前記半導体素子の上面が向いている方向に前記電極端子部を屈曲させて延在せしめるリードフォーミング工程と、
前記電極端子部で前記半導体素子の上面が向いている方向に位置する部位が露出するように前記リードフレームを樹脂封止する樹脂封止工程と、
前記各回路パターン間をそれぞれ切断して個々の半導体装置へと分離するリードカット工程と、
を備える半導体装置の製造方法。 - 半導体素子の裏面と接合されたダイパッドを有するリードフレームと前記半導体素子と
が単一の熱硬化性の樹脂を用いてトランスファーモールドにより封止された半導体装置であって、
前記半導体素子の表面が向いている方向のみに前記リードフレームの電極端子部が前記樹脂から露出して延在し、
前記ダイパッドには、複数の回路パターンが帯状に連なった配列方向と直交する方向に平行な段差が設けられていることを特徴とする半導体装置。
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