KR101361757B1 - 대칭적인 플라즈마 프로세스 챔버 - Google Patents

대칭적인 플라즈마 프로세스 챔버 Download PDF

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KR101361757B1
KR101361757B1 KR1020120107823A KR20120107823A KR101361757B1 KR 101361757 B1 KR101361757 B1 KR 101361757B1 KR 1020120107823 A KR1020120107823 A KR 1020120107823A KR 20120107823 A KR20120107823 A KR 20120107823A KR 101361757 B1 KR101361757 B1 KR 101361757B1
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substrate support
chamber body
assembly
disposed
plasma
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KR20130037168A (ko
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제임스 디. 카르두치
하미드 타바솔리
아지트 발라크리쉬나
지강 첸
앤드류 뉴옌
더글라스 에이. 쥬니어 부치버거
카르틱 라마스와미
샤히드 라우프
케네스 에스. 콜린스
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어플라이드 머티어리얼스, 인코포레이티드
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
    • H01J37/32495—Means for protecting the vessel against plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32541—Shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32568—Relative arrangement or disposition of electrodes; moving means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32733—Means for moving the material to be treated
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32733—Means for moving the material to be treated
    • H01J37/32743—Means for moving the material to be treated for introducing the material into processing chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816—Pressure
    • H01J37/32834—Exhausting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating
    • H01J2237/3321—CVD [Chemical Vapor Deposition]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating
    • H01J2237/3322—Problems associated with coating
    • H01J2237/3323—Problems associated with coating uniformity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H01J2237/3343—Problems associated with etching
    • H01J2237/3344—Problems associated with etching isotropy

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
KR1020120107823A 2011-10-05 2012-09-27 대칭적인 플라즈마 프로세스 챔버 Active KR101361757B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201161543565P 2011-10-05 2011-10-05
US61/543,565 2011-10-05

Related Child Applications (5)

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KR1020120114790A Division KR102024584B1 (ko) 2011-10-05 2012-10-16 대칭적인 플라즈마 프로세스 챔버
KR1020120114793A Division KR102039454B1 (ko) 2011-10-05 2012-10-16 대칭적인 플라즈마 프로세스 챔버
KR1020120114791A Division KR101944895B1 (ko) 2011-10-05 2012-10-16 대칭적인 플라즈마 프로세스 챔버
KR1020120114792A Division KR102009783B1 (ko) 2011-10-05 2012-10-16 대칭적인 플라즈마 프로세스 챔버
KR1020130043537A Division KR102009784B1 (ko) 2011-10-05 2013-04-19 대칭적인 플라즈마 프로세스 챔버

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KR20130037168A KR20130037168A (ko) 2013-04-15
KR101361757B1 true KR101361757B1 (ko) 2014-02-12

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KR1020120107823A Active KR101361757B1 (ko) 2011-10-05 2012-09-27 대칭적인 플라즈마 프로세스 챔버
KR1020120114790A Active KR102024584B1 (ko) 2011-10-05 2012-10-16 대칭적인 플라즈마 프로세스 챔버
KR1020120114792A Active KR102009783B1 (ko) 2011-10-05 2012-10-16 대칭적인 플라즈마 프로세스 챔버
KR1020120114791A Active KR101944895B1 (ko) 2011-10-05 2012-10-16 대칭적인 플라즈마 프로세스 챔버
KR1020120114793A Active KR102039454B1 (ko) 2011-10-05 2012-10-16 대칭적인 플라즈마 프로세스 챔버
KR1020130043537A Active KR102009784B1 (ko) 2011-10-05 2013-04-19 대칭적인 플라즈마 프로세스 챔버
KR1020170107938A Active KR101944894B1 (ko) 2011-10-05 2017-08-25 대칭적인 플라즈마 프로세스 챔버
KR1020190131891A Active KR102166643B1 (ko) 2011-10-05 2019-10-23 대칭적인 플라즈마 프로세스 챔버
KR1020200130047A Active KR102299994B1 (ko) 2011-10-05 2020-10-08 대칭적인 플라즈마 프로세스 챔버
KR1020210102480A Active KR102423749B1 (ko) 2011-10-05 2021-08-04 대칭적인 플라즈마 프로세스 챔버
KR1020220084597A Active KR102697479B1 (ko) 2011-10-05 2022-07-08 대칭적인 플라즈마 프로세스 챔버
KR1020240108525A Active KR102888404B1 (ko) 2011-10-05 2024-08-13 대칭적인 플라즈마 프로세스 챔버
KR1020250172660A Pending KR20250166810A (ko) 2011-10-05 2025-11-14 대칭적인 플라즈마 프로세스 챔버

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KR1020120114790A Active KR102024584B1 (ko) 2011-10-05 2012-10-16 대칭적인 플라즈마 프로세스 챔버
KR1020120114792A Active KR102009783B1 (ko) 2011-10-05 2012-10-16 대칭적인 플라즈마 프로세스 챔버
KR1020120114791A Active KR101944895B1 (ko) 2011-10-05 2012-10-16 대칭적인 플라즈마 프로세스 챔버
KR1020120114793A Active KR102039454B1 (ko) 2011-10-05 2012-10-16 대칭적인 플라즈마 프로세스 챔버
KR1020130043537A Active KR102009784B1 (ko) 2011-10-05 2013-04-19 대칭적인 플라즈마 프로세스 챔버
KR1020170107938A Active KR101944894B1 (ko) 2011-10-05 2017-08-25 대칭적인 플라즈마 프로세스 챔버
KR1020190131891A Active KR102166643B1 (ko) 2011-10-05 2019-10-23 대칭적인 플라즈마 프로세스 챔버
KR1020200130047A Active KR102299994B1 (ko) 2011-10-05 2020-10-08 대칭적인 플라즈마 프로세스 챔버
KR1020210102480A Active KR102423749B1 (ko) 2011-10-05 2021-08-04 대칭적인 플라즈마 프로세스 챔버
KR1020220084597A Active KR102697479B1 (ko) 2011-10-05 2022-07-08 대칭적인 플라즈마 프로세스 챔버
KR1020240108525A Active KR102888404B1 (ko) 2011-10-05 2024-08-13 대칭적인 플라즈마 프로세스 챔버
KR1020250172660A Pending KR20250166810A (ko) 2011-10-05 2025-11-14 대칭적인 플라즈마 프로세스 챔버

Country Status (5)

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US (8) US9741546B2 (enExample)
JP (11) JP6308716B2 (enExample)
KR (13) KR101361757B1 (enExample)
CN (6) CN103050362B (enExample)
TW (13) TWI719473B (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
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KR20160141700A (ko) * 2014-04-09 2016-12-09 어플라이드 머티어리얼스, 인코포레이티드 개선된 유동 균일성/가스 컨덕턴스로 가변 프로세스 볼륨을 처리하기 위한 대칭적 챔버 본체 설계 아키텍처
KR20190017051A (ko) * 2016-06-15 2019-02-19 에바텍 아크티엔게젤샤프트 진공 처리 챔버 및 진공 처리된 플레이트형 기판의 제조방법
US11776858B2 (en) 2019-06-21 2023-10-03 Samsung Electronics Co., Ltd. Plasma apparatus and methods of manufacturing semiconductor device using the same

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TWI502617B (zh) * 2010-07-21 2015-10-01 應用材料股份有限公司 用於調整電偏斜的方法、電漿處理裝置與襯管組件
KR20120043636A (ko) * 2010-10-26 2012-05-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 플라즈마 처리 장치 및 플라즈마 ｃｖｄ 장치
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US10170279B2 (en) 2012-07-20 2019-01-01 Applied Materials, Inc. Multiple coil inductively coupled plasma source with offset frequencies and double-walled shielding
US9082590B2 (en) 2012-07-20 2015-07-14 Applied Materials, Inc. Symmetrical inductively coupled plasma source with side RF feeds and RF distribution plates
US9879684B2 (en) 2012-09-13 2018-01-30 Kla-Tencor Corporation Apparatus and method for shielding a controlled pressure environment
US10714315B2 (en) 2012-10-12 2020-07-14 Asm Ip Holdings B.V. Semiconductor reaction chamber showerhead
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CN111952149A (zh) * 2013-05-23 2020-11-17 应用材料公司 用于半导体处理腔室的经涂布的衬里组件
US9837250B2 (en) * 2013-08-30 2017-12-05 Applied Materials, Inc. Hot wall reactor with cooled vacuum containment
KR101518398B1 (ko) * 2013-12-06 2015-05-08 참엔지니어링(주) 기판 처리 장치
CN104752131B (zh) * 2013-12-25 2017-07-21 北京北方微电子基地设备工艺研究中心有限责任公司 上电极组件进气装置及上电极组件
CN110690098A (zh) * 2014-02-06 2020-01-14 应用材料公司 基板支撑组件以及用于处理基板的设备
CN104862667B (zh) * 2014-02-26 2017-04-19 甘志银 对称的气相沉积设备的反应腔体
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