KR101021052B1 - 표시 장치 및 표시 장치를 제조하는 방법 - Google Patents
표시 장치 및 표시 장치를 제조하는 방법 Download PDFInfo
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- KR101021052B1 KR101021052B1 KR1020100113636A KR20100113636A KR101021052B1 KR 101021052 B1 KR101021052 B1 KR 101021052B1 KR 1020100113636 A KR1020100113636 A KR 1020100113636A KR 20100113636 A KR20100113636 A KR 20100113636A KR 101021052 B1 KR101021052 B1 KR 101021052B1
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- Prior art keywords
- film
- opening
- insulating film
- organic resin
- nitride insulating
- Prior art date
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 43
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Images
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Abstract
Description
도 2a 내지 도 2e는 박막 트랜지스터를 제조하는 공정을 도시한 도면.
도 3a 및 도 3b는 유기 수지막의 단면 구조를 도시하는 SEM 사진 및 개략도.
도 4a 및 도 4b는 임계 전압들에서의 분산들을 도시한 도면.
도 5a 및 도 5b는 유기 수지막의 단면 구조를 도시하는 SEM 사진 및 개략도.
도 6a 및 도 6b는 유기 수지막의 단면 구조를 도시하는 SEM 사진 및 개략도.
도 7a 및 도 7b는 유기 수지막의 단면 구조를 보여주는 SEM 사진 및 개략도.
도 8a 및 도 8b는 박막 트랜지스터의 구조를 도시한 도면.
도 9a 내지 도 9d는 발광 디바이스의 화소 구조를 도시한 도면.
도 10a 및 도 10b는 발광 디바이스의 단면 구조들을 도시한 도면.
도 11a 내지 도 11c는 발광 디바이스의 단면 구조들을 도시한 도면.
도 12는 박막 트랜지스터의 구조를 도시한 도면.
도 13a 내지 도 13d는 액정 표시 장치의 화소 구조를 도시한 도면.
도 14a 및 도 14b는 액정 표시 장치의 단면 구조들을 도시한 도면.
도 15a 내지 도 15d는 발광 디바이스의 외관 구조를 도시한 도면.
도 16a 내지 도 16h는 전기 기구들의 특정예들을 도시한 도면.
도 17a 및 도 17b는 질화 실리콘막이 유전체로 사용되는 경우에 MOS 구조의 C-V 특성을 도시한 도면.
951 : 게이트 배선
952 : 데이타 배선
956 : 커패시터부
957 : EL 소자
904: 소스 영역
905 : 드레인 영역
Claims (28)
- 표시 장치를 제조하는 방법에 있어서,
트랜지스터의 소스 전극 및 드레인 전극 중 하나 위에 제 1 질화 절연막을 형성하는 단계;
상기 제 1 질화 절연막 위에 유기 수지막을 형성하는 단계;
상기 유기 수지막에서 상기 제 1 질화 절연막의 일부를 노출시키는 제 1 개구부를 형성하는 단계;
상기 제 1 개구부에서 상기 유기 수지막의 상면 및 상기 유기 수지막의 내벽면을 덮는 제 2 질화 절연막을 형성하는 단계;
상기 제 1 질화 절연막 및 상기 제 2 질화 절연막을 에칭함으로써 상기 제 1 개구부 내부에 제 2 개구부를 형성하는 단계; 및
상기 제 2 질화 절연막 위에 화소 전극을 형성하는 단계로서, 상기 화소 전극은 상기 제 2 개구부를 통해 상기 소스 전극 및 상기 드레인 전극 중 하나와 접하는, 상기 화소 전극을 형성하는 단계를 포함하는, 표시 장치를 제조하는 방법. - 제 1 항에 있어서,
상기 트랜지스터는 기판 위에 형성되고,
상기 제 1 개구부에서 상기 유기 수지막의 내벽면의 제 1 지점에서의 곡률 반경은 상기 제 1 개구부에서 상기 유기 수지막의 상기 내벽면의 제 2 지점에서의 곡률 반경보다 크고, 상기 기판의 상기 상면으로부터 상기 제 2 지점의 높이는 상기 기판의 상기 상면으로부터 상기 제 1 지점의 높이보다 높은, 표시 장치를 제조하는 방법. - 제 1 항에 있어서,
상기 유기 수지막의 상기 내벽면의 곡률 반경은 상기 제 1 개구부의 하부로부터 상기 제 1 개구부의 상부의 방향으로 연속적으로 증가하는, 표시 장치를 제조하는 방법. - 제 1 항에 있어서,
상기 제 1 개구부는 상기 유기 수지막의 노광 및 현상에 의해 형성되는, 표시 장치를 제조하는 방법. - 제 1 항에 있어서,
상기 유기 수지막은 감광성 유기 수지막인, 표시 장치를 제조하는 방법. - 제 1 항에 있어서,
상기 제 2 질화 절연막은 고주파 방전을 사용하는 스퍼터링법에 의해 형성되는, 표시 장치를 제조하는 방법. - 제 1 항에 있어서,
상기 제 1 질화 절연막과 상기 제 2 질화 절연막 각각은 질화 실리콘막, 질화산화 실리콘막, 산화질화 실리콘막, 질화산화 알루미늄막, 및 산화질화 알루미늄막으로 구성된 그룹으로부터 선택된 하나인, 표시 장치를 제조하는 방법. - 제 1 항에 있어서,
상기 제 1 질화 절연막과 상기 제 2 질화 절연막 각각은 질화 실리콘막인, 표시 장치를 제조하는 방법. - 제 1 항에 있어서,
상기 유기 수지막은 평탄화 막으로서 기능하는, 표시 장치를 제조하는 방법. - 제 1 항에 있어서,
상기 화소 전극은 산화 도전막을 포함하는, 표시 장치를 제조하는 방법. - 제 1 항에 있어서,
상기 화소 전극 위에 발광층을 형성하는 단계를 더 포함하는, 표시 장치를 제조하는 방법. - 제 1 항에 있어서,
상기 제 1 질화 절연막은 상기 제 1 개구부에서 상기 제 2 질화 절연막과 접하는, 표시 장치를 제조하는 방법. - 제 1 항에 따른 방법에 의해 제조된 상기 표시 장치를 이용하는 전자 기기에 있어서,
상기 전자 기기는 비디오 카메라, 디지털 카메라, 고글형 디스플레이, 네비게이션 시스템, 음향 재생 장치, 랩탑 컴퓨터, 게임 기기, 휴대 정보 단말, 화상 재생 장치, 텔레비전, 및 휴대 전화로 구성된 그룹으로부터 선택된 하나인, 전자 기기. - 표시 장치에 있어서:
트랜지스터의 소스 전극 및 드레인 전극 중 하나 위의 제 1 질화 절연막으로서, 상기 제 1 질화 절연막은 제 1 개구부를 갖는, 상기 제 1 질화 절연막;
상기 제 1 질화 절연막 위에 유기 수지막으로서, 상기 유기 수지막은 상기 제 1 개구부와 겹치는 제 2 개구부를 갖고, 상기 제 1 개구부의 상부에서 상기 제 1 개구부의 에지는 상기 제 2 개구부의 하부에서 상기 제 2 개구부의 에지에 의해 둘러싸이는, 상기 유기 수지막;
상기 유기 수지막 위의 제 2 질화 절연막으로서, 상기 제 2 질화 절연막은 상기 제 1 개구부 및 상기 제 2 개구부와 겹치는 제 3 개구부를 갖는, 상기 제 2 질화 절연막; 및
상기 제 2 질화 절연막 위의 화소 전극으로서, 상기 화소 전극은 상기 제 1 개구부, 상기 제 2 개구부, 및 상기 제 3 개구부를 통해 상기 소스 전극 또는 상기 드레인 전극 중 하나에 전기적으로 접속되는, 상기 화소 전극을 포함하는, 표시 장치. - 표시 장치에 있어서:
트랜지스터로서,
게이트 전극;
상기 게이트 전극과 겹치는 반도체 막; 및
상기 반도체 막과 겹치는 소스 전극 및 드레인 전극을 포함하는, 상기 트랜지스터;
상기 트랜지스터 위의 제 1 질화 절연막으로서, 제 1 개구부를 갖는 상기 제 1 질화 절연막;
상기 제 1 질화 절연막 위의 유기 수지막으로서, 상기 제 1 개구부와 겹치는 제 2 개구부를 갖고, 상기 제 1 개구부의 상부에서 상기 제 1 개구부의 에지는 상기 제 2 개구부의 하부에서 상기 제 2 개구부의 에지에 의해 둘러싸이는, 상기 유기 수지막;
상기 유기 수지막 위의 제 2 질화 절연막으로서, 상기 제 2 질화 절연막은 상기 제 1 개구부 및 상기 제 2 개구부와 겹치는 제 3 개구부를 갖는, 상기 제 2 질화 절연막; 및
상기 제 2 질화 절연막 위의 화소 전극으로서, 상기 화소 전극은 상기 제 1 개구부, 상기 제 2 개구부, 및 상기 제 3 개구부를 통해 상기 소스 전극 또는 상기 드레인 전극 중 하나에 전기적으로 접속되는, 상기 화소 전극을 포함하는, 표시 장치. - 표시 장치에 있어서:
커패시터로서,
제 1 전극; 및
제 2 전극을 포함하는, 상기 커패시터;
트랜지스터로서,
게이트 전극;
상기 게이트 전극과 겹치는 반도체 막; 및
상기 반도체 막과 겹치는 소스 전극 및 드레인 전극을 포함하는, 상기 트랜지스터;
상기 트랜지스터 위의 제 1 질화 절연막으로서, 제 1 개구부를 갖는 상기 제 1 질화 절연막;
상기 제 1 질화 절연막 위의 유기 수지막으로서, 상기 제 1 개구부와 겹치는 제 2 개구부를 갖고, 상기 제 1 개구부의 상부에서 상기 제 1 개구부의 에지는 상기 제 2 개구부의 하부에서 상기 제 2 개구부의 에지에 의해 둘러싸이는, 상기 유기 수지막;
상기 유기 수지막 위의 제 2 질화 절연막으로서, 상기 제 2 질화 절연막은 상기 제 1 개구부 및 상기 제 2 개구부와 겹치는 제 3 개구부를 갖는, 상기 제 2 질화 절연막; 및
상기 제 2 질화 절연막 위의 화소 전극으로서, 상기 화소 전극은 상기 제 1 개구부, 상기 제 2 개구부, 및 상기 제 3 개구부를 통해 상기 소스 전극 또는 상기 드레인 전극 중 하나에 전기적으로 접속되는, 상기 화소 전극을 포함하고,
상기 커패시터는 상기 제 1 전극과 상기 제 2 전극 사이의 상기 제 1 질화 절연막 및 상기 제 2 질화 절연막을 더 포함하는, 표시 장치. - 제 14 항 내지 제 16 항 중 어느 한 항에 있어서,
상기 트랜지스터는 기판 위에 형성되고,
상기 제 2 개구부에서 상기 유기 수지막의 내벽면의 제 1 지점에서의 곡률 반경은 상기 제 2 개구부에서 상기 유기 수지막의 상기 내벽면의 제 2 지점에서의 곡률 반경보다 크고, 상기 기판의 상면으로부터 상기 제 2 지점의 높이는 상기 기판의 상기 상면으로부터 상기 제 1 지점의 높이보다 높은, 표시 장치. - 제 14 항 내지 제 16 항 중 어느 한 항에 있어서,
상기 유기 수지막의 내벽면의 곡률 반경은 상기 제 2 개구부의 하부로부터 상기 제 2 개구부의 상부의 방향으로 연속적으로 증가하는, 표시 장치. - 제 14 항 내지 제 16 항 중 어느 한 항에 있어서,
상기 제 2 개구부는 상기 유기 수지막의 노광 및 현상에 의해 형성되는, 표시 장치. - 제 14 항 내지 제 16 항 중 어느 한 항에 있어서,
상기 유기 수지막은 감광성 유기 수지막인, 표시 장치. - 제 14 항 내지 제 16 항 중 어느 한 항에 있어서,
상기 제 2 질화 절연막은 고주파 방전을 사용하는 스퍼터링법에 의해 형성되는, 표시 장치. - 제 14 항 내지 제 16 항 중 어느 한 항에 있어서,
상기 제 1 질화 절연막과 상기 제 2 질화 절연막 각각은 질화 실리콘막, 질화산화 실리콘막, 산화질화 실리콘막, 질화산화 알루미늄막, 및 산화질화 알루미늄막으로 구성된 그룹으로부터 선택된 하나인, 표시 장치. - 제 14 항 내지 제 16 항 중 어느 한 항에 있어서,
상기 제 1 질화 절연막과 상기 제 2 질화 절연막 각각은 질화 실리콘막인, 표시 장치. - 제 14 항 내지 제 16 항 중 어느 한 항에 있어서,
상기 유기 수지막은 평탄화 막으로서 기능하는, 표시 장치. - 제 14 항 내지 제 16 항 중 어느 한 항에 있어서,
상기 화소 전극은 산화 도전막을 포함하는, 표시 장치. - 제 14 항 내지 제 16 항 중 어느 한 항에 있어서,
상기 화소 전극 위에 발광층을 더 포함하는, 표시 장치. - 제 14 항 내지 제 16 항 중 어느 한 항에 있어서,
상기 제 1 질화 절연막은 상기 제 2 개구부에서 상기 제 2 질화 절연막과 접하는, 표시 장치. - 제 14 항 내지 제 16 항 중 어느 한 항에 따른 상기 표시 장치를 이용하는 전자 기기에 있어서,
상기 전자 기기는 비디오 카메라, 디지털 카메라, 고글형 디스플레이, 네비게이션 시스템, 음향 재생 장치, 랩탑 컴퓨터, 게임 기기, 휴대 정보 단말, 화상 재생 장치, 텔레비전, 및 휴대 전화로 구성된 그룹으로부터 선택된 하나인, 전자 기기.
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JPH04139828A (ja) * | 1990-10-01 | 1992-05-13 | Nec Corp | 半導体装置の製造方法 |
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