KR20030081104A - 반도체 소자 및 이를 이용한 디스플레이 디바이스 - Google Patents
반도체 소자 및 이를 이용한 디스플레이 디바이스 Download PDFInfo
- Publication number
- KR20030081104A KR20030081104A KR10-2003-0022263A KR20030022263A KR20030081104A KR 20030081104 A KR20030081104 A KR 20030081104A KR 20030022263 A KR20030022263 A KR 20030022263A KR 20030081104 A KR20030081104 A KR 20030081104A
- Authority
- KR
- South Korea
- Prior art keywords
- insulating film
- opening
- film
- nitride insulating
- nitride
- Prior art date
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 96
- 150000004767 nitrides Chemical class 0.000 claims abstract description 136
- 239000011347 resin Substances 0.000 claims abstract description 95
- 229920005989 resin Polymers 0.000 claims abstract description 95
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 53
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 53
- 239000003990 capacitor Substances 0.000 claims description 47
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 claims description 39
- 238000000034 method Methods 0.000 claims description 39
- 239000000758 substrate Substances 0.000 claims description 32
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 30
- 239000010703 silicon Substances 0.000 claims description 30
- 229910052710 silicon Inorganic materials 0.000 claims description 30
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 26
- 238000003860 storage Methods 0.000 claims description 26
- 229910052782 aluminium Inorganic materials 0.000 claims description 17
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 17
- 238000004519 manufacturing process Methods 0.000 claims description 15
- 238000001312 dry etching Methods 0.000 claims description 14
- 238000001039 wet etching Methods 0.000 claims description 5
- 239000003989 dielectric material Substances 0.000 claims 4
- 239000010408 film Substances 0.000 description 381
- 238000002161 passivation Methods 0.000 description 74
- 239000010409 thin film Substances 0.000 description 52
- 239000010410 layer Substances 0.000 description 35
- 230000015572 biosynthetic process Effects 0.000 description 29
- 239000000463 material Substances 0.000 description 27
- 238000005530 etching Methods 0.000 description 25
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- 229910052751 metal Inorganic materials 0.000 description 21
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- 238000010586 diagram Methods 0.000 description 10
- 239000007789 gas Substances 0.000 description 9
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 8
- 229910052744 lithium Inorganic materials 0.000 description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 7
- 238000004544 sputter deposition Methods 0.000 description 7
- 230000008859 change Effects 0.000 description 6
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- 238000005516 engineering process Methods 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- 238000000206 photolithography Methods 0.000 description 5
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 239000012298 atmosphere Substances 0.000 description 4
- 238000004042 decolorization Methods 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- 238000000059 patterning Methods 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 4
- 229910052721 tungsten Inorganic materials 0.000 description 4
- 239000010937 tungsten Substances 0.000 description 4
- 230000000903 blocking effect Effects 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 238000004020 luminiscence type Methods 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 239000004033 plastic Substances 0.000 description 3
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- 229920006255 plastic film Polymers 0.000 description 3
- 229920001721 polyimide Polymers 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 125000006850 spacer group Chemical group 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- QVQLCTNNEUAWMS-UHFFFAOYSA-N barium oxide Chemical compound [Ba]=O QVQLCTNNEUAWMS-UHFFFAOYSA-N 0.000 description 2
- 238000004061 bleaching Methods 0.000 description 2
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- 239000004020 conductor Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000004132 cross linking Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
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- 230000009467 reduction Effects 0.000 description 2
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- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 238000001179 sorption measurement Methods 0.000 description 2
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- BRPQOXSCLDDYGP-UHFFFAOYSA-N calcium oxide Chemical compound [O-2].[Ca+2] BRPQOXSCLDDYGP-UHFFFAOYSA-N 0.000 description 1
- ODINCKMPIJJUCX-UHFFFAOYSA-N calcium oxide Inorganic materials [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 description 1
- 239000000292 calcium oxide Substances 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 210000002858 crystal cell Anatomy 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000007872 degassing Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000002845 discoloration Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000005984 hydrogenation reaction Methods 0.000 description 1
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- 230000001678 irradiating effect Effects 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
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- 239000012528 membrane Substances 0.000 description 1
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- UNRFQJSWBQGLDR-UHFFFAOYSA-N methane trihydrofluoride Chemical compound C.F.F.F UNRFQJSWBQGLDR-UHFFFAOYSA-N 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 231100000989 no adverse effect Toxicity 0.000 description 1
- 229910052756 noble gas Inorganic materials 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- OFIYHXOOOISSDN-UHFFFAOYSA-N tellanylidenegallium Chemical compound [Te]=[Ga] OFIYHXOOOISSDN-UHFFFAOYSA-N 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- NLSXASIDNWDYMI-UHFFFAOYSA-N triphenylsilanol Chemical group C=1C=CC=CC=1[Si](C=1C=CC=CC=1)(O)C1=CC=CC=C1 NLSXASIDNWDYMI-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1248—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
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- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
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- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
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- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
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- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
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- G02F1/1341—Filling or closing of cells
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- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
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- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/13439—Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making
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- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
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- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
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- G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
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- G—PHYSICS
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- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
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- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
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- G02F1/136286—Wiring, e.g. gate line, drain line
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3157—Partial encapsulation or coating
- H01L23/3171—Partial encapsulation or coating the coating being directly applied to the semiconductor body, e.g. passivation layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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Abstract
Description
Claims (56)
- 반도체 소자에 있어서,활성 층을 가진 반도체와;상기 반도체와 접촉한 게이트 절연막과;상기 게이트 절연막을 통해 상기 활성 층에 대향된 게이트 전극과;상기 활성 층 위에 형성된 제 1 질화 절연막과;상기 제 1 질화 절연막 위에 형성된 감광성 유기 수지막과;상기 감광성 유기 수지막 위에 형성된 제 2 질화 절연막과;상기 제 2 질화 절연막 위에 제공된 배선을 구비하며,제 1 개구부가 상기 감광성 유기 수지막에 제공되고, 상기 제 1 개구부의 내벽 표면이 상기 제 2 질화 절연막으로 덮이며, 제 2 개구부가 상기 제 1 개구부 내부에서 상기 게이트 절연막, 상기 제 1 질화 절연막, 및 상기 제 2 질화 절연막을 포함하는 적층에 제공되고, 상기 반도체는 상기 제 1 개구부와 상기 제 2 개구부를 통해 상기 배선에 접속된, 반도체 소자.
- 반도체 소자에 있어서,활성 층을 가진 반도체와;상기 반도체와 접촉한 게이트 절연막과;상기 게이트 절연막을 통해 상기 활성 층에 대향된 게이트 전극과;상기 활성 층 위에 형성된 제 1 질화 절연막과;상기 제 1 질화 절연막 위에 형성된 감광성 유기 수지막과;상기 감광성 유기 수지막 위에 형성된 제 2 질화 절연막과;상기 제 2 질화 절연막 상에 제공된 배선을 구비하며,제 1 개구부가 상기 감광성 유기 수지막에 제공되고, 상기 제 1 개구부의 내벽 표면이 상기 제 2 질화 절연막으로 덮이며, 상기 제 1 질화 절연막과 상기 제 2 질화 절연막은 상기 제 1 개구부의 바닥에서 0.3 ㎛ 내지 3 ㎛의 영역에서 서로 접촉하고, 제 2 개구부가 상기 제 1 개구부 내부에서 상기 게이트 절연막, 상기 제 1 질화 절연막, 및 상기 제 2 질화 절연막을 포함하는 적층에 제공되고, 상기 반도체는 상기 제 1 개구부와 상기 제 2 개구부를 통해 상기 배선에 접속된, 반도체 소자.
- 반도체 소자에 있어서,활성 층을 가진 반도체와;상기 반도체와 접촉한 게이트 절연막과;상기 게이트 절연막을 통해 상기 활성 층에 대향된 게이트 전극과;상기 활성 층 위에 형성된 제 1 질화 절연막과;상기 제 1 질화 절연막 위에 형성된 포지티브 타입의 감광성 아크릴막과;상기 포지티브 타입의 감광성 아크릴막 위에 형성된 제 2 질화 절연막과;상기 제 2 질화 절연막 위에 제공된 배선을 구비하며,제 1 개구부가 상기 포지티브 타입의 감광성 아크릴막에 제공되고, 상기 제 1 개구부의 내벽 표면이 상기 제 2 질화 절연막으로 덮이며, 제 2 개구부가 상기 제 1 개구부 내부에서 상기 게이트 절연막, 상기 제 1 질화 절연막, 및 상기 제 2 질화 절연막을 포함하는 적층에 제공되고, 상기 반도체는 상기 제 1 개구부와 상기 제 2 개구부를 통해 상기 배선에 접속된, 반도체 소자.
- 반도체 소자에 있어서,활성 층을 가진 반도체와;상기 반도체와 접촉한 게이트 절연막과;상기 게이트 절연막을 통해 상기 활성 층에 대향된 게이트 전극과;상기 활성 층 위에 형성된 제 1 질화 절연막과;상기 제 1 질화 절연막 위에 형성된 포지티브 타입의 감광성 아크릴막과;상기 포지티브 타입의 감광성 아크릴막 위에 형성된 제 2 질화 절연막과;상기 제 2 질화 절연막 상에 제공된 배선을 구비하며,제 1 개구부가 상기 포지티브 타입의 감광성 아크릴 막에 제공되고, 상기 제 1 개구부의 내벽 표면이 상기 제 2 질화 절연막으로 덮이며, 상기 제 1 질화 절연막과 상기 제 2 질화 절연막은 상기 제 1 개구부의 바닥에서 0.3 ㎛ 내지 3 ㎛의 영역에서 서로 접촉하고, 제 2 개구부가 상기 제 1 개구부 내부에서 상기 게이트 절연막, 상기 제 1 질화 절연막, 및 상기 제 2 질화 절연막을 포함하는 적층에 제공되고, 상기 반도체는 상기 제 1 개구부와 상기 제 2 개구부를 통해 상기 배선에접속된, 반도체 소자.
- 제 1 항에 있어서,상기 제 1 질화 절연막과 상기 제 2 질화 절연막 각각은 실리콘 질화막, 실리콘 질화산화막, 실리콘 산화질화막, 알루미늄 질화막, 알루미늄 질화산화막, 및 알루미늄 산화질화막으로 구성된 그룹으로부터 선택된 하나인, 반도체 소자.
- 제 2 항에 있어서,상기 제 1 질화 절연막과 상기 제 2 질화 절연막 각각은 실리콘 질화막, 실리콘 질화산화막, 실리콘 산화질화막, 알루미늄 질화막, 알루미늄 질화 산화막, 및 알루미늄 산화질화막으로 구성된 그룹으로부터 선택된 하나인, 반도체 소자.
- 제 3 항에 있어서,상기 제 1 질화 절연막과 상기 제 2 질화 절연막 각각은 실리콘 질화막, 실리콘 질화산화막, 실리콘 산화질화막, 알루미늄 질화막, 알루미늄 질화 산화막, 및 알루미늄 산화질화막으로 구성된 그룹으로부터 선택된 하나인, 반도체 소자.
- 제 4 항에 있어서,상기 제 1 질화 절연막과 상기 제 2 질화 절연막 각각은 실리콘 질화막, 실리콘 질화산화막, 실리콘 산화질화막, 알루미늄 질화막, 알루미늄 질화 산화막, 및알루미늄 산화질화막으로 구성된 그룹으로부터 선택된 하나인, 반도체 소자.
- 제 1 항에 있어서, 상기 제 1 개구부의 상단부(top end portion)에서의 곡률 반경은 3 ㎛ 내지 30 ㎛인, 반도체 소자.
- 제 2 항에 있어서, 상기 제 1 개구부의 상단부에서의 곡률 반경은 3 ㎛ 내지 30 ㎛인, 반도체 소자.
- 제 3 항에 있어서, 상기 제 1 개구부의 상단부에서의 곡률 반경은 3 ㎛ 내지 30 ㎛인, 반도체 소자.
- 제 4 항에 있어서, 상기 제 1 개구부의 상단부에서의 곡률 반경은 3 ㎛ 내지 30 ㎛인, 반도체 소자.
- 제 1 항에 있어서, 상기 제 1 개구부의 상단부에서의 곡률 반경은 3 ㎛ 내지 30 ㎛의 범위에서 연속적으로 변화되는, 반도체 소자.
- 제 2 항에 있어서, 상기 제 1 개구부의 상단부에서의 곡률 반경은 3 ㎛ 내지 30 ㎛의 범위에서 연속적으로 변화되는, 반도체 소자.
- 제 3 항에 있어서, 상기 제 1 개구부의 상단부에서의 곡률 반경은 3 ㎛ 내지 30 ㎛의 범위에서 연속적으로 변화되는, 반도체 소자.
- 제 4 항에 있어서, 상기 제 1 개구부의 상단부에서의 곡률 반경은 3 ㎛ 내지 30 ㎛의 범위에서 연속적으로 변화되는, 반도체 소자.
- 제 1 항에 있어서, 상기 제 1 개구부의 하단부(bottom end portion)에서의 접촉각(θ)은 30°<θ<65°을 만족하는, 반도체 소자.
- 제 2 항에 있어서, 상기 제 1 개구부의 하단부에서의 접촉각(θ)은 30°<θ<65°을 만족하는, 반도체 소자.
- 제 3 항에 있어서, 상기 제 1 개구부의 하단부에서의 접촉각(θ)은 30°<θ<65°을 만족하는, 반도체 소자.
- 제 4 항에 있어서, 상기 제 1 개구부의 하단부에서의 접촉각(θ)은 30°<θ<65°을 만족하는, 반도체 소자.
- 복수의 픽셀들을 포함하는 픽셀부를 구비하는 디스플레이 디바이스로서,상기 픽셀들의 각각에서 반도체 소자와 이 반도체 소자에 접속된 저장 커패시터가 기판 상에 제공되며,상기 반도체 소자는, 활성 층을 가진 반도체와; 상기 반도체와 접촉한 게이트 절연막과; 상기 게이트 절연막을 통해 상기 활성 층에 대향된 게이트 전극과; 상기 활성 층 위에 형성된 제 1 질화 절연막과; 상기 제 1 질화 절연막 상에 형성된 감광성 유기 수지막과; 상기 감광성 유기 수지막 상에 형성된 제 2 질화 절연막과; 상기 제 2 질화 절연막 상에 제공된 배선을 포함하며, 제 1 개구부가 상기 감광성 유기 수지막에 제공되고, 상기 제 1 개구부의 내벽 표면이 상기 제 2 질화 절연막으로 덮이며, 제 2 개구부가 상기 제 1 개구부 내부에서 상기 게이트 절연막, 상기 제 1 질화 절연막, 및 상기 제 2 질화 절연막을 포함하는 적층에 제공되고, 상기 반도체는 상기 제 1 개구부와 상기 제 2 개구부를 통해 상기 배선에 접속되며,상기 저장 커패시터는 상기 제 1 질화 절연막과 상기 제 2 질화 절연막을 유전체들로서 포함하는, 디스플레이 디바이스.
- 복수의 픽셀들을 포함하는 픽셀부를 구비하는 디스플레이 디바이스로서,상기 픽셀들의 각각에서 반도체 소자와 이 반도체 소자에 접속된 저장 커패시터가 기판 상에 제공되며,상기 반도체 소자는, 활성 층을 가진 반도체와; 상기 반도체와 접촉한 게이트 절연막과; 상기 게이트 절연막을 통해 상기 활성 층에 대향된 게이트 전극과; 상기 활성 층 위에 형성된 제 1 질화 절연막과; 상기 제 1 질화 절연막 상에 형성된 감광성 유기 수지막과; 상기 감광성 유기 수지막 상에 형성된 제 2 질화 절연막과; 상기 제 2 질화 절연막 상에 제공된 배선을 포함하며, 제 1 개구부가 상기 감광성 유기 수지막에 제공되고, 상기 제 1 개구부의 내벽 표면이 상기 제 2 질화 절연막으로 덮이며, 상기 제 1 질화 절연막과 상기 제 2 질화 절연막은 상기 제 1 개구부의 바닥에서 0.3 ㎛ 내지 3 ㎛의 영역에서 서로 접촉하고, 제 2 개구부가 상기 제 1 개구부 내부에서 상기 게이트 절연막, 상기 제 1 질화 절연막, 및 상기 제 2 질화 절연막을 포함하는 적층에 제공되고, 상기 반도체는 상기 제 1 개구부와 상기 제 2 개구부를 통해 상기 배선에 접속되며,상기 저장 커패시터는 상기 제 1 질화 절연막과 상기 제 2 질화 절연막을 유전체들로서 포함하는, 디스플레이 디바이스.
- 복수의 픽셀들을 포함하는 픽셀부를 구비하는 디스플레이 디바이스로서, 상기 픽셀들의 각각에서 반도체 소자와 이 반도체 소자에 접속된 저장 커패시터가 기판 상에 제공되며,상기 반도체 소자는, 활성 층을 가진 반도체와; 상기 반도체와 접촉한 게이트 절연막과; 상기 게이트 절연막을 통해 상기 활성 층에 대향된 게이트 전극과; 상기 활성 층 위에 형성된 제 1 질화 절연막과; 상기 제 1 질화 절연막 상에 형성된 포지티브 타입의 감광성 아크릴막과; 상기 포지티브 타입의 감광성 아크릴막 상에 형성된 제 2 질화 절연막과; 상기 제 2 질화 절연막 상에 제공된 배선을 포함하며, 제 1 개구부가 상기 포지티브 타입의 감광성 아크릴막에 제공되고, 상기 제 1개구부의 내벽 표면이 상기 제 2 질화 절연막으로 덮이며, 제 2 개구부가 상기 제 1 개구부 내부에서 상기 게이트 절연막, 상기 제 1 질화 절연막, 및 상기 제 2 질화 절연막을 포함하는 적층에 제공되고, 상기 반도체는 상기 제 1 개구부와 상기 제 2 개구부를 통해 상기 배선에 접속되며,상기 저장 커패시터는 상기 제 1 질화 절연막과 상기 제 2 질화 절연막을 유전체들로서 포함하는, 디스플레이 디바이스.
- 복수의 픽셀들을 포함하는 픽셀부를 구비하는 디스플레이 디바이스로서, 상기 픽셀들의 각각에서 반도체 소자와 이 반도체 소자에 접속된 저장 커패시터가 기판 상에 제공되며,상기 반도체 소자는, 활성 층을 가진 반도체와; 상기 반도체와 접촉한 게이트 절연막과; 상기 게이트 절연막을 통해 상기 활성 층에 대향된 게이트 전극과; 상기 활성 층 위에 형성된 제 1 질화 절연막과; 상기 제 1 질화 절연막 상에 형성된 포지티브 타입의 감광성 아크릴막과; 상기 포지티브 타입의 감광성 아크릴 막 상에 형성된 제 2 질화 절연막과; 상기 제 2 질화 절연막 상에 제공된 배선을 포함하며, 제 1 개구부가 상기 포지티브 타입의 감광성 아크릴 막에 제공되고, 상기 제 1 개구부의 내벽 표면이 상기 제 2 질화 절연막으로 덮이며, 상기 제 1 질화 절연막과 상기 제 2 질화 절연막은 상기 제 1 개구부의 바닥에서 0.3 ㎛ 내지 3 ㎛의 영역에서 서로 접촉하고, 제 2 개구부가 상기 제 1 개구부 내부에서 상기 게이트 절연막, 상기 제 1 질화 절연막, 및 상기 제 2 질화 절연막을 포함하는 적층에 제공되고, 상기 반도체는 상기 제 1 개구부와 상기 제 2 개구부를 통해 상기 배선에 접속되며,상기 저장 커패시터는 상기 제 1 질화 절연막과 상기 제 2 질화 절연막을 유전체들로서 포함하는, 디스플레이 디바이스.
- 제 21 항에 있어서,상기 제 1 질화 절연막과 상기 제 2 질화 절연막 각각은 실리콘 질화막, 실리콘 질화산화막, 실리콘 산화질화막, 알루미늄 질화막, 알루미늄 질화 산화막, 및 알루미늄 산화질화막으로 구성된 그룹으로부터 선택된 하나인, 디스플레이 디바이스.
- 제 22 항에 있어서,상기 제 1 질화 절연막과 상기 제 2 질화 절연막 각각은 실리콘 질화막, 실리콘 질화산화막, 실리콘 산화질화막, 알루미늄 질화막, 알루미늄 질화산화막, 및 알루미늄 산화질화막으로 구성된 그룹으로부터 선택된 하나인, 디스플레이 디바이스.
- 제 23 항에 있어서,상기 제 1 질화 절연막과 상기 제 2 질화 절연막 각각은 실리콘 질화막, 실리콘 질화산화막, 실리콘 산화질화막, 알루미늄 질화막, 알루미늄 질화 산화막, 및알루미늄 산화질화막으로 구성된 그룹으로부터 선택된 하나인, 디스플레이 디바이스.
- 제 24 항에 있어서,상기 제 1 질화 절연막과 상기 제 2 질화 절연막 각각은 실리콘 질화막, 실리콘 질화산화막, 실리콘 산화질화막, 알루미늄 질화막, 알루미늄 질화 산화막, 및 알루미늄 산화질화막으로 구성된 그룹으로부터 선택된 하나인, 디스플레이 디바이스.
- 제 21 항에 있어서, 상기 제 1 개구부의 상단부에서의 곡률 반경은 3 ㎛ 내지 30 ㎛인, 디스플레이 디바이스.
- 제 22 항에 있어서, 상기 제 1 개구부의 상단부에서의 곡률 반경은 3 ㎛ 내지 30 ㎛인, 디스플레이 디바이스.
- 제 23 항에 있어서, 상기 제 1 개구부의 상단부에서의 곡률 반경은 3 ㎛ 내지 30 ㎛인, 디스플레이 디바이스.
- 제 24 항에 있어서, 상기 제 1 개구부의 상단부에서의 곡률 반경은 3 ㎛ 내지 30 ㎛인, 디스플레이 디바이스.
- 제 21 항에 있어서, 상기 제 1 개구부의 상단부에서의 곡률 반경은 3 ㎛ 내지 30 ㎛의 범위에서 연속적으로 변화되는, 디스플레이 디바이스.
- 제 22 항에 있어서, 상기 제 1 개구부의 상단부에서의 곡률 반경은 3 ㎛ 내지 30 ㎛의 범위에서 연속적으로 변화되는, 디스플레이 디바이스.
- 제 23 항에 있어서, 상기 제 1 개구부의 상단부에서의 곡률 반경은 3 ㎛ 내지 30 ㎛의 범위에서 연속적으로 변화되는, 디스플레이 디바이스.
- 제 24 항에 있어서, 상기 제 1 개구부의 상단부에서의 곡률 반경은 3 ㎛ 내지 30 ㎛의 범위에서 연속적으로 변화되는, 디스플레이 디바이스.
- 제 21 항에 있어서, 상기 제 1 개구부의 하단부에서의 접촉각(θ)은 30°<θ<65°을 만족하는, 디스플레이 디바이스.
- 제 22 항에 있어서, 상기 제 1 개구부의 하단부에서의 접촉각(θ)은 30°<θ<65°을 만족하는, 디스플레이 디바이스.
- 제 23 항에 있어서, 상기 제 1 개구부의 하단부에서의 접촉각(θ)은30°<θ<65°을 만족하는, 디스플레이 디바이스.
- 제 24 항에 있어서, 상기 제 1 개구부의 하단부에서의 접촉각(θ)은 30°<θ<65°을 만족하는, 디스플레이 장치.
- 반도체 소자를 제조하는 방법에 있어서,활성 층을 가진 반도체를 형성하는 단계와;상기 반도체와 접촉하는 게이트 절연막을 형성하는 단계와;상기 게이트 절연막을 통해 상기 활성 층에 대향된 게이트 전극을 형성하는 단계와;상기 활성 층 위에 형성되는 제 1 질화 절연막을 형성하는 단계와;상기 제 1 질화 절연막 위에 형성되는 감광성 유기 수지막을 형성하는 단계와;상기 감광성 유기 수지막에 제 1 개구부를 형성하는 단계와;상기 감광성 유기 수지막 및 상기 제 1 개구부 위에 제 2 질화 절연막을 형성하는 단계와;상기 제 1 개구부 내부에서 상기 게이트 절연막, 상기 제 1 질화 절연막 및 상기 제 2 질화 절연막에 제 2 개구부를 형성하는 단계와;상기 제 1 개구부 및 상기 제 2 개구부를 통해 상기 반도체 막과 접촉하는, 상기 제 2 질화 절연막 위에 제공되는 배선을 형성하는 단계를 포함하는 반도체 소자 제조 방법.
- 반도체 소자를 제조하는 방법에 있어서,활성 층을 가진 반도체를 형성하는 단계와;상기 반도체와 접촉하는 게이트 절연막을 형성하는 단계와;상기 게이트 절연막을 통해 상기 활성 층에 대향된 게이트 전극을 형성하는 단계와;상기 활성 층 위에 형성되는 제 1 질화 절연막을 형성하는 단계와;상기 제 1 질화 절연막 위에 형성되는 감광성 유기 수지막을 형성하는 단계와;상기 감광성 유기 수지막에 제 1 개구부를 형성하는 단계와;상기 감광성 유기 수지막 및 상기 제 1 개구부 위에 제 2 질화 절연막을 형성하는 단계와;상기 제 1 개구부 내부에서 상기 게이트 절연막, 상기 제 1 질화 절연막 및 상기 제 2 질화 절연막에 제 2 개구부를 형성하는 단계와;상기 제 1 개구부 및 상기 제 2 개구부를 통해 상기 반도체 막과 접촉하는, 상기 제 2 질화 절연막 위에 제공되는 배선을 형성하는 단계를 포함하며,상기 제 1 절연막과 상기 제 2 절연막은 상기 제 1 개구부의 바닥에서 0.3 ㎛ 내지 3 ㎛의 영역에서 서로 접촉하는, 반도체 소자 제조 방법.
- 반도체 소자를 제조하는 방법에 있어서,활성 층을 가진 반도체를 형성하는 단계와;상기 반도체와 접촉하는 게이트 절연막을 형성하는 단계와;상기 게이트 절연막을 통해 상기 활성 층에 대향된 게이트 전극을 형성하는 단계와;상기 활성 층 위에 형성되는 제 1 질화 절연막을 형성하는 단계와;상기 제 1 질화 절연막 위에 형성되는 포지티브 타입의 감광성 유기 수지막을 형성하는 단계와;상기 포지티브 타입의 감광성 유기 수지막에 제 1 개구부를 형성하는 단계와;상기 포지티브 타입의 감광성 유기 수지막 및 상기 제 1 개구부 위에 제 2 질화 절연막을 형성하는 단계와;상기 제 1 개구부 내부에서 상기 게이트 절연막, 상기 제 1 질화 절연막 및 상기 제 2 질화 절연막에 제 2 개구부를 형성하는 단계와;상기 제 1 개구부와 제 2 개구부을 통해 상기 반도체 막에 접촉하는, 상기 제 2 질화 절연막 위에 제공되는 배선을 형성하는 단계를 포함하는 반도체 소자 제조 방법.
- 반도체 소자를 제조하는 방법에 있어서,활성 층을 가진 반도체를 형성하는 단계와;상기 반도체와 접촉하는 게이트 절연막을 형성하는 단계와;상기 게이트 절연막을 통해 상기 활성 층에 대향된 게이트 전극을 형성하는 단계와;상기 활성 층 위에 형성되는 제 1 질화 절연막을 형성하는 단계와;상기 제 1 질화 절연막 위에 형성되는 포지티브 타입의 감광성 유기 수지막을 형성하는 단계와;상기 포지티브 타입의 감광성 유기 수지막에 제 1 개구부를 형성하는 단계와;상기 포지티브 타입의 감광성 유기 수지막 및 상기 제 1 개구부 위에 제 2 질화 절연막을 형성하는 단계와;상기 제 1 개구부 내부에서 상기 게이트 절연막, 상기 제 1 질화 절연막 및 상기 제 2 질화 절연막에 제 2 개구부를 형성하는 단계와;상기 제 1 개구부와 제 2 개구부를 통해 상기 반도체 막에 접촉하는, 상기 제 2 질화 절연막 위에 제공되는 배선을 형성하는 단계를 포함하며,상기 제 1 절연막과 상기 제 2 절연막은 상기 제 1 개구부의 바닥에서 0.3 ㎛ 내지 3 ㎛의 영역에서 서로 접촉하는, 반도체 소자 제조 방법.
- 제 41 항에 있어서, 상기 제 1 개구부는 습식 에칭에 의해 형성되는, 반도체 소자 제조 방법.
- 제 42 항에 있어서, 상기 제 1 개구부는 습식 에칭에 의해 형성되는, 반도체 소자 제조 방법.
- 제 43 항에 있어서, 상기 제 1 개구부는 습식 에칭에 의해 형성되는, 반도체 소자 제조 방법.
- 제 44 항에 있어서, 상기 제 1 개구부는 습식 에칭에 의해 형성되는, 반도체 소자 제조 방법.
- 제 41 항에 있어서, 상기 제 2 개구부는 건식 에칭에 의해 형성되는, 반도체 소자 제조 방법.
- 제 42 항에 있어서, 상기 제 2 개구부는 건식 에칭에 의해 형성되는, 반도체 소자 제조 방법.
- 제 43 항에 있어서, 상기 제 2 개구부는 건식 에칭에 의해 형성되는, 반도체 소자 제조 방법.
- 제 44 항에 있어서, 상기 제 2 개구부는 건식 에칭에 의해 형성되는, 반도체 소자 제조 방법.
- 제 41 항에 있어서, 상기 제 1 개구부의 하단부에서의 접촉각(θ)은 30°<θ<65°을 만족하는, 반도체 소자.
- 제 42 항에 있어서, 상기 제 1 개구부의 하단부에서의 접촉각(θ)은 30°<θ<65°을 만족하는, 반도체 소자.
- 제 43 항에 있어서, 상기 제 1 개구부의 하단부에서의 접촉각(θ)은 30°<θ<65°을 만족하는, 반도체 소자.
- 제 44 항에 있어서, 상기 제 1 개구부의 하단부에서의 접촉각(θ)은 30°<θ<65°을 만족하는, 반도체 소자.
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