TWI553388B - 液晶顯示裝置及其元件基板 - Google Patents

液晶顯示裝置及其元件基板 Download PDF

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TWI553388B
TWI553388B TW103131296A TW103131296A TWI553388B TW I553388 B TWI553388 B TW I553388B TW 103131296 A TW103131296 A TW 103131296A TW 103131296 A TW103131296 A TW 103131296A TW I553388 B TWI553388 B TW I553388B
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layer
substrate
width
contact hole
liquid crystal
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TW201610536A (zh
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鍾岳庭
許紹武
盧永信
陳俊宇
邱冠宇
王兆祥
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群創光電股份有限公司
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Priority to TW103131296A priority Critical patent/TWI553388B/zh
Priority to US14/533,052 priority patent/US9754976B2/en
Priority to JP2014005952U priority patent/JP3195603U/ja
Priority to KR1020150035035A priority patent/KR20160030828A/ko
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    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/1343Electrodes
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/1343Electrodes
    • G02F1/134309Electrodes characterised by their geometrical arrangement
    • G02F1/134363Electrodes characterised by their geometrical arrangement for applying an electric field parallel to the substrate, i.e. in-plane switching [IPS]
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/1343Electrodes
    • G02F1/13439Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362Active matrix addressed cells
    • G02F1/136227Through-hole connection of the pixel electrode to the active element through an insulation layer
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362Active matrix addressed cells
    • G02F1/1368Active matrix addressed cells in which the switching element is a three-electrode device
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/1343Electrodes
    • G02F1/134309Electrodes characterised by their geometrical arrangement
    • G02F1/134372Electrodes characterised by their geometrical arrangement for fringe field switching [FFS] where the common electrode is not patterned

Description

液晶顯示裝置及其元件基板
本發明係有關於一種液晶顯示裝置,特別係有關於一種,具有接觸孔之液晶顯示裝置。
在液晶顯示裝置之中,接觸孔常用於導通像素電極以及源極電極。然而,參照第1A圖,液晶分子2會隨著接觸孔1的輪廓排列,由於接觸孔1設計的剖面形狀往往為上寬下窄的弧形結構。
參照第1B圖,在習知技術中,接觸孔周圍設置有一底層金屬層3以及一畫素導電層4,底層金屬層3與畫素導電層4之間以層間絕緣層5進行分隔。當接觸孔1於底層金屬層3位置的孔徑過小的時候,容易造成底層金屬層3與畫素導電層4電性接觸而短路。然而,當接觸孔1於底層金屬層3位置的孔徑過大的時候,容易造成底層金屬層3與畫素導電層4之間的儲存電容不足,因此造成了產品不良率過高。
本發明係為了欲解決習知技術之問題而提供之一種元件基板,包括一基板、一金屬層、一平坦層以及一第一導電層。金屬層位於該基板上。平坦層位於該金屬層上,其中該平坦層具有一接觸孔,該接觸孔具有一連續壁面以及一底面,該底面暴露 該金屬層,其中該底面具有一第一寬度。第一導電層位於該平坦層上,並具有一開孔暴露該接觸孔,該開孔於該接觸孔上方具有一第二寬度。其中,該第一寬度與第二寬度需滿足以下之公式: 其中,L1為該第一寬度,L2為該第二寬度,h為該平坦層之厚度,θ為連續壁面之一預設參考點與一基點之間之一直線與該底面之一延伸面的夾角,其中,該預設參考點位於該連續壁面上,且該預設參考點與該底面之垂直距離為0.95h,該基點為該連續壁面與該底面的交界位置。
應用本發明之實施例,液晶顯示裝置的光亮度損失小於1%,為可以接受的範圍,並且避免了第一導電層140與該第二導電層170之間接觸短路以及儲存電容不足等等問題。
1‧‧‧接觸孔
2‧‧‧液晶分子
3‧‧‧底層金屬層
4‧‧‧畫素導電層
5‧‧‧層間絕緣層
100‧‧‧元件基板
110‧‧‧基板
120‧‧‧金屬層
130‧‧‧平坦層
131‧‧‧接觸孔
132‧‧‧連續壁面
133‧‧‧底面
134‧‧‧預設參考點
135‧‧‧基點
137‧‧‧半導體層
140‧‧‧第一導電層
141‧‧‧開孔
160‧‧‧層間絕緣層
170‧‧‧第二導電層
200‧‧‧液晶顯示裝置
201‧‧‧掃瞄線
202‧‧‧信號線
203‧‧‧半導體層
204‧‧‧汲極電極
205‧‧‧共用電極
210‧‧‧畫素電極
231‧‧‧接觸孔
233‧‧‧接觸孔之底面
234‧‧‧共用電極開口
240‧‧‧源極電極
250‧‧‧液晶層
260‧‧‧對向基板
L1‧‧‧第一寬度
L2‧‧‧第二寬度
h‧‧‧厚度
θ‧‧‧夾角
β‧‧‧夾角
A‧‧‧顯示區
B‧‧‧非顯示區
L‧‧‧直線
L’‧‧‧切線
第1A、1B圖係顯示習知液晶顯示裝置的元件基板。
第2A圖係顯示本發明一實施例之元件基板的主要結構。
第2B圖係顯示本發明一實施例之元件基板的完整結構。
第3A圖係顯示本發明實施例之元件基板應用於一液晶顯示裝置。
第3B圖係顯示第3A圖中之3B部分之細部元件。
第4圖係顯示應用本發明實施例之液晶顯示裝置。
參照第2A圖,其係顯示本發明一實施例之元件基板100,包括一基板110、一金屬層120、一平坦層130以及一第一導電層140。金屬層120位於該基板110上,平坦層130位於該金屬層120上,其中該平坦層130具有一接觸孔131,該接觸孔131具有一連續壁面132以及一底面133,該底面133暴露該金屬層120,其中該底面133具有一第一寬度L1。第一導電層140位於該平坦層130上,並具有一開孔141暴露該接觸孔,該開孔141於該接觸孔上方具有一第二寬度L2
再參照第2A圖,申請人透過曲線公式的推導得知,當該第一寬度L1與第二寬度L2滿足以下之公式時,液晶顯示裝置的光亮度損失小於1%,為可以接受的範圍,並且避免了接觸短路以及儲存電容不足等等問題: 其中,L1為該第一寬度,L2為該第二寬度,h為該平坦層130之厚度,θ為連續壁面132之一預設參考點134與一基點135之間之一直線與該底面133之一延伸面的夾角,其中,該預設參考點134位於該連續壁面132上,且該預設參考點134與該底面133之垂直距離為0.95h,該基點135為該連續壁面132與該底面133的交界位置。依照上述各參數之調整,連續壁面132的曲率以及形狀可適度變化
參照第2A圖,曲線公式的推導過程如下:
第一步,曲線公式擬合(假設),假設該接觸孔之連續壁面之斜面方程式滿足下列公式 y=f(R)=-A’exp(-R).....(1)
第二步,曲線公式擬合(對通過預設參考點134、基點135以及角度θ校正),假設斜坡上之預設參考點134為距離平坦層頂部的深度總深度h的p(p=0.05)倍,則該接觸孔之連續壁面之斜面方程式滿足
其中,該預設參考點134距離基點135的水平距離為R’,則當曲線通過該預設參考點134,即f(r=R’)時,滿足下列兩個方程式
第三步,校正,實際角度(底部的切線L’之角度)為β=1.5θ(對基點135切線角度修正)
[接觸孔曲線方程式]
第四步,代回原方程式,將基點平移至接觸孔131的中心∵r=R-R 0....(平移)
[接觸孔實際曲線方程式]
第七步,推導第一導電層140的開口半徑寬度。
第一導電層140一般位於平坦層130的平坦區域,由於平坦層130的平坦區域不是完美的平坦,而在液晶操作區中的液晶分子傾角趨近於0.1°,因此δ=0.1°為其上限值。
[求得第一導電層140的開口半徑寬度]
當液晶面板中只考慮預傾角(tile angle)而無水平旋轉角(twist angle)時,其液晶面板的整體穿透率符合下列公式:T sin2(Γ),其中Γ代表相位延遲角度,T代表液晶面板穿透率,而穿透率將正比於正弦平方函數。申請人發現,當液晶排列的傾角介於0.1至8度之間,此時的光亮度損失小於1%,為合格之顯示器所能接受的範圍。彙整上述參數條件後,即獲得公式
在一實施例中,該夾角θ介於20~40度之間。在一較佳實施例中,該夾角θ介於25~35度之間。
參照第2A圖,該金屬層120可以為一驅動元件之源極 電極或汲極電極。在一實施例中,元件基板100更包含一半導體層137位於該金屬層120與該基板110之間。該半導體層137之材料可以為多晶矽材料、非晶矽材料或金屬氧化物材料。
參照第2B圖,元件基板100其更包含一層間絕緣層160以及一第二導電層170,該層間絕緣層160至少部分設於該第一導電層140與該第二導電層170之間,該第二導電層170透過該接觸孔131與該金屬層120電性連接。
參照第3A圖,本發明實施例之元件基板應用於一液晶顯示裝置200,其包括一顯示區(像素區域)A以及一非顯示區B。參照第3B圖,其係顯示第3A圖中之3B部分之細部元件,液晶顯示裝置200更包括掃瞄線201、信號線202、半導體層203、源極電極240、接觸孔231(相當於第2A圖之接觸孔131)、接觸孔之底面233(相當於第2A圖之底面133)、共用電極開孔234(相當於第2A圖之開孔141)、汲極電極204、共用電極205以及畫素電極210等等元件於顯示區A內。本發明實施例中,該金屬層120包含源極電極240或汲極電極204,其中該液晶顯示裝置之模式可為FFS(邊緣電場切換)顯示裝置以及IPS(水平電廠切換)顯示裝置。
參照第4圖,其係顯示應用本發明實施例之液晶顯示裝置200,包括元件基板100、液晶層250以及對向基板260。
應用本發明之實施例,液晶顯示裝置的光亮度損失小於1%,為可以接受的範圍,並且避免了第一導電層140與該第二導電層170之間接觸短路以及儲存電容不足等等問題。
雖然本發明已以具體之較佳實施例揭露如上,然其並非用以限定本發明,任何熟習此項技術者,在不脫離本發明之 精神和範圍內,仍可作些許的更動與潤飾,因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。
100‧‧‧元件基板
110‧‧‧基板
120‧‧‧金屬層
130‧‧‧平坦層
131‧‧‧接觸孔
132‧‧‧連續壁面
133‧‧‧底面
134‧‧‧預設參考點
135‧‧‧基點
137‧‧‧半導體層
140‧‧‧第一導電層
141‧‧‧開孔
L1‧‧‧第一寬度
L2‧‧‧第二寬度
h‧‧‧厚度
θ‧‧‧夾角
β‧‧‧夾角
L‧‧‧直線
L’‧‧‧切線

Claims (12)

  1. 一種元件基板,包括:一基板;一金屬層,位於該基板上;一平坦層,位於該金屬層上,其中該平坦層具有一接觸孔,該接觸孔具有一連續壁面以及一底面,該底面暴露該金屬層,其中該底面具有一第一寬度;一第一導電層,位於該平坦層上,並具有一開孔暴露該接觸孔,該開孔於該接觸孔上方具有一第二寬度;其中,該第一寬度與第二寬度需滿足以下之公式: 其中,L1為該第一寬度,L2為該第二寬度,h為該平坦層之厚度,θ為連續壁面之一預設參考點與一基點之間之一直線與該底面之一延伸面的夾角,該夾角θ介於20~40度之間,該預設參考點位於該連續壁面上,且該預設參考點與該底面之垂直距離為0.95h,該基點為該連續壁面與該底面的交界位置。
  2. 如申請專利範圍第1項所述之元件基板,其中,該夾角θ介於25~35度之間。
  3. 如申請專利範圍第1項所述之元件基板,其更包含一 層間絕緣層以及一第二導電層,該層間絕緣層至少部分設於該第一導電層與該第二導電層之間,該第二導電層透過該接觸孔與該金屬層電性連接。
  4. 如申請專利範圍第1項所述之元件基板,其中該金屬層為一驅動元件之源極或汲極。
  5. 如申請專利範圍第4項所述之元件基板,其更包含,一半導體層位於該金屬層與該基板之間。
  6. 如申請專利範圍第5項所述之元件基板,其中該半導體層之材料為多晶矽、非晶矽或金屬氧化物。
  7. 一種液晶顯示裝置,包括:一對向基板;一元件基板,相對於該對向基板;一液晶層,位於該對向基板以及一元件基板間;其中,該元件基板包括:一基板;一金屬層,位於該基板上;一平坦層,位於該金屬層上,其中該平坦層具有一接觸孔,該接觸孔具有一連續壁面以及一底面,該底面暴露該金屬層,其中該底面具有一第一寬度;一第一導電層,位於該平坦層上,並具有一開孔暴露該接觸孔,該開孔於該接觸孔上方具有一第二寬度;其中,該第一寬度與第二寬度需滿足以下之公式: 其中,L1為該第一寬度,L2為該第二寬度,h為該平坦層之厚度,θ為連續壁面之一預設參考點與一基點之間之一直線與該底面之一延伸面的夾角,該夾角θ介於20~40度之間,該預設參考點位於該連續壁面上,且該預設參考點與該底面之垂直距離為0.95h,該基點為該連續壁面與該底面的交界位置。
  8. 如申請專利範圍第7項所述之液晶顯示裝置,其中該夾角θ介於25~35度之間。
  9. 如申請專利範圍第7項所述之液晶顯示裝置,其更包含一層間絕緣層以及一第二導電層,該層間絕緣層至少部分設於該第一導電層與該第二導電層之間,該第二導電層透過該接觸孔與該金屬層電性連接。
  10. 如申請專利範圍第9項所述之液晶顯示裝置,其中該金屬層為一驅動元件之源極或汲極。
  11. 如申請專利範圍第10項所述之液晶顯示裝置,其更包含,一半導體層位於該金屬層與該基板之間。
  12. 如申請專利範圍第11項所述之液晶顯示裝置,其中該半導體層之材料為多晶矽、非晶矽或金屬氧化物。
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JP2014005952U JP3195603U (ja) 2014-09-11 2014-11-10 液晶ディスプレイ及びその素子基板
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