JP2012257187A - 半導体集積回路 - Google Patents
半導体集積回路 Download PDFInfo
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- JP2012257187A JP2012257187A JP2011169095A JP2011169095A JP2012257187A JP 2012257187 A JP2012257187 A JP 2012257187A JP 2011169095 A JP2011169095 A JP 2011169095A JP 2011169095 A JP2011169095 A JP 2011169095A JP 2012257187 A JP2012257187 A JP 2012257187A
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Abstract
【解決手段】記憶回路が有する複数の順序回路のそれぞれにおいて、酸化物半導体によってチャネル形成領域が構成されるトランジスタと、該トランジスタがオフ状態となることによって一方の電極が電気的に接続されたノードが浮遊状態となる容量素子とを設ける。なお、酸化物半導体によってトランジスタのチャネル形成領域が構成されることで、オフ電流(リーク電流)が極めて低いトランジスタを実現することができる。そのため、記憶回路に対して電源電圧が供給されない期間において当該トランジスタをオフ状態とすることで、当該期間における容量素子の一方の電極が電気的に接続されたノードの電位を一定又はほぼ一定に保持することが可能である。その結果、上述した課題を解決することが可能である。
【選択図】図1
Description
はじめに、本発明の一態様の半導体集積回路の構成例について図1(A)〜(C)を参照して説明する。
ここで、酸化物半導体によってチャネル形成領域が構成されるトランジスタのオフ電流(リーク電流)を測定した結果について示す。
本明細書で開示される半導体集積回路は、記憶回路に対して電源電圧が供給されない期間においても当該記憶回路が有する複数の順序回路のそれぞれにおいて、特定のノード(図1(C)に示すトランジスタ31のソース及びドレインの他方並びに容量素子32の一方の電極が電気的に接続されるノード)の電位を保持することが可能である。そして、当該ノードで保持される電位を当該順序回路において保持されるデータに対応させることが可能である。すなわち、本明細書で開示される半導体集積回路においては、当該記憶回路に対して電源電圧の供給が再開される際に再度演算等を行う必要がない。これにより、本明細書で開示される半導体集積回路では、消費電力の低減及び動作の遅延の低減を図ることが可能である。
上述した半導体集積回路の具体例について図9〜図19を参照して説明する。
図9は、図1(C)に示した順序回路21_xの具体例を示す図である。図9に示す順序回路21_xは、トランジスタ31と、容量素子32と、NANDゲート210a〜210fと、ANDゲート211a、211bと、スイッチ212a〜212dとを有する。なお、それぞれの接続関係は図9を参照すれば自明であるため、図9に示す順序回路21_xの接続関係の詳細な説明は割愛する。また、トランジスタ31のソース及びドレインの他方並びに容量素子32の一方の電極に電気的に接続されるノードをノードNとして、当該ノードNにおけるデータ保持動作について以下に説明する。
上述した半導体集積回路は、多数のトランジスタによって構成される。ここで、当該多数のトランジスタは、各種のトランジスタの中からそれぞれのトランジスタに求められる特性等に応じて適宜選択することが可能である。例えば、上述した半導体集積回路において、順序回路21_1〜21_n及び組み合わせ回路22_1〜22_nに含まれる論理ゲートを構成するトランジスタには高速動作が求められる。そのため、当該トランジスタとしては、単結晶シリコン若しくは多結晶シリコン又はガリウムヒ素(GaAs)などの化合物半導体によってチャネル形成領域が構成されるトランジスタを適用することが好ましい。また、パワーゲートトランジスタ20にはオフ電流(リーク電流)が低いことが求められる。そのため、当該トランジスタとしては上述した酸化物半導体によってチャネル形成領域が構成されるトランジスタを適用することが好ましい。
次に、トランジスタ160及びトランジスタ164の作製方法の一例について説明する。以下では、はじめにP型トランジスタ160の作製方法について図12を参照して説明し、その後、トランジスタ164の作製方法について図13および図14を参照して説明する。
(a―A)2+(b―B)2+(c―C)2≦r2
を満たすことを言い、rは、例えば、0.05とすればよい。他の酸化物でも同様である。
図15乃至図18は、トランジスタ164の変形例を示す図である。
上述したトランジスタの作製工程と異なる酸化物半導体層の作製工程について図21を用いて説明する。
上述した半導体集積回路を有するCPUの具体例について、図22を参照して説明する。
11 記憶回路
12 パワーゲート制御回路
20 パワーゲートトランジスタ
21_1〜21_n 順序回路
21_x 順序回路
22_1〜22_n 組み合わせ回路
30 フリップフロップ
31 トランジスタ
32 容量素子
50 基板
51 下地層
52 ゲート層
53 ゲート絶縁層
54 酸化物半導体層
55a ソース層
55b ドレイン層
56 保護絶縁層
57 平坦化絶縁層
58a 導電層
58b 導電層
100 基板
102 保護層
104 半導体領域
106 素子分離絶縁層
108 ゲート絶縁層
110 ゲート層
112 絶縁層
114a 不純物領域
114b 不純物領域
116 チャネル形成領域
118 サイドウォール絶縁層
120a 高濃度不純物領域
120b 高濃度不純物領域
122 金属層
124a 金属化合物領域
124b 金属化合物領域
126 層間絶縁層
128 層間絶縁層
130a ソース層
130b ドレイン層
132 絶縁層
134 導電層
136a 電極層
136b 電極層
136d ゲート層
138 ゲート絶縁層
140 酸化物半導体層
142a ソース層
142b ドレイン層
144 保護絶縁層
146 層間絶縁層
148 導電層
150a 電極層
150b 電極層
150d 電極層
150e 電極層
152 絶縁層
154a 電極層
154b 電極層
154d 電極層
160 トランジスタ
162a 酸化物導電層
162b 酸化物導電層
164 トランジスタ
210a NANDゲート
210b NANDゲート
210c NANDゲート
210d NANDゲート
210e NANDゲート
210f NANDゲート
211a ANDゲート
211b ANDゲート
212a スイッチ
212b スイッチ
212c スイッチ
212d スイッチ
400 絶縁層
437 絶縁層
450a 結晶性酸化物半導体層
450b 結晶性酸化物半導体層
453 酸化物半導体層
501 下地絶縁層
502 埋め込み絶縁物
503a 半導体領域
503b 半導体領域
503c 半導体領域
504 ゲート絶縁層
505 ゲート層
506a 側壁絶縁物
506b 側壁絶縁物
507 絶縁物
508a ソース層
508b ドレイン層
600 基板
602 下地絶縁膜
604 保護絶縁膜
606 酸化物半導体膜
606a 高抵抗領域
606b 低抵抗領域
608 ゲート絶縁層
610 ゲート層
612 側壁絶縁膜
614 電極
616 層間絶縁膜
618 層間絶縁膜
700 基板
702 下地絶縁膜
706 酸化物半導体膜
708 ゲート絶縁層
710 ゲート層
714 電極
716 層間絶縁膜
718 配線
720 保護膜
801 測定系
811 トランジスタ
812 トランジスタ
813 容量素子
814 トランジスタ
815 トランジスタ
900 基板
901 ALU
902 ALU Controller
903 Instruction Decoder
904 Interrupt Controller
905 Timing Controller
906 Register
907 Register Controller
908 Bus I/F
909 ROM
920 ROM I/F
Claims (4)
- 演算によって得られたデータを保持する記憶回路と、前記記憶回路に対する電源電圧の供給を制御するパワーゲート制御回路と、を有し、
前記記憶回路は、第1の順序回路乃至第nの順序回路(nは、2以上の自然数)と、前記第1の順序回路の出力信号を用いて動作する第1の組み合わせ回路乃至前記第nの順序回路の出力信号を用いて動作する第nの組み合わせ回路と、を有し、
前記第1の順序回路乃至前記第nの順序回路に含まれるk個(kは、1以上n以下の自然数)の順序回路のそれぞれが、酸化物半導体によってチャネル形成領域が構成されるトランジスタと、前記トランジスタがオフ状態となることによって一方の電極が電気的に接続されたノードが浮遊状態となる容量素子と、を有する半導体集積回路。 - 請求項1において、
高電源電位を供給する配線及び低電源電位を供給する配線の少なくとも一つと、前記記憶回路との電気的な接続をパワーゲートトランジスタのスイッチングによって制御することにより前記記憶回路に対する電源電圧の供給を制御する半導体集積回路。 - 請求項2において、
前記パワーゲートトランジスタのチャネル形成領域が酸化物半導体によって構成される半導体集積回路。 - 請求項2又は請求項3において、
前記容量素子の他方の電極に前記高電源電位又は前記低電源電位が供給される半導体集積回路。
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Cited By (167)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
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JP2016006839A (ja) * | 2014-06-20 | 2016-01-14 | 三菱瓦斯化学株式会社 | 少なくともインジウム、ガリウム、亜鉛およびシリコンを含む酸化物のエッチング液およびエッチング方法 |
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US9368636B2 (en) | 2013-04-01 | 2016-06-14 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing a semiconductor device comprising a plurality of oxide semiconductor layers |
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US9472678B2 (en) | 2013-12-27 | 2016-10-18 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
KR20160138131A (ko) | 2014-03-28 | 2016-12-02 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 트랜지스터 및 반도체 장치 |
KR20170003674A (ko) | 2014-05-27 | 2017-01-09 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제작 방법 |
KR20170005124A (ko) | 2014-05-30 | 2017-01-11 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치, 모듈, 및 전자 기기 |
KR20170034318A (ko) | 2015-09-18 | 2017-03-28 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 전자 기기 |
US9627418B2 (en) | 2013-12-26 | 2017-04-18 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US9634149B2 (en) | 2013-08-07 | 2017-04-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing thereof |
US9647129B2 (en) | 2014-07-04 | 2017-05-09 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
KR20170051270A (ko) | 2015-10-30 | 2017-05-11 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 용량 소자, 반도체 장치, 모듈, 및 전자 기기의 제작 방법 |
US9666606B2 (en) | 2015-08-21 | 2017-05-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and electronic device |
US9685560B2 (en) | 2015-03-02 | 2017-06-20 | Semiconductor Energy Laboratory Co., Ltd. | Transistor, method for manufacturing transistor, semiconductor device, and electronic device |
US9741794B2 (en) | 2013-08-05 | 2017-08-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing semiconductor device |
US9761736B2 (en) | 2013-07-25 | 2017-09-12 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing semiconductor device |
US9768318B2 (en) | 2015-02-12 | 2017-09-19 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
US9773919B2 (en) | 2015-08-26 | 2017-09-26 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
US9806201B2 (en) | 2014-03-07 | 2017-10-31 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US9812587B2 (en) | 2015-01-26 | 2017-11-07 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
US9812466B2 (en) | 2014-08-08 | 2017-11-07 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US9825181B2 (en) | 2015-12-11 | 2017-11-21 | Semiconductor Energy Laboratory Co., Ltd. | Transistor, circuit, semiconductor device, display device, and electronic device |
US9831309B2 (en) | 2015-02-11 | 2017-11-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
US9831238B2 (en) | 2014-05-30 | 2017-11-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device including insulating film having opening portion and conductive film in the opening portion |
KR20170137125A (ko) | 2015-04-13 | 2017-12-12 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제작 방법 |
KR20170137822A (ko) | 2015-04-20 | 2017-12-13 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 전자 기기 |
KR20170139447A (ko) | 2016-06-09 | 2017-12-19 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 트랜지스터 |
KR20180003432A (ko) | 2016-06-30 | 2018-01-09 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 반도체 장치의 동작 방법 |
US9865588B2 (en) | 2014-05-30 | 2018-01-09 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and electronic device |
US9865712B2 (en) | 2015-03-03 | 2018-01-09 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
US9882061B2 (en) | 2015-03-17 | 2018-01-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
US9882064B2 (en) | 2016-03-10 | 2018-01-30 | Semiconductor Energy Laboratory Co., Ltd. | Transistor and electronic device |
US9887300B2 (en) | 2014-06-18 | 2018-02-06 | Semiconductor Energy Laboratory Co., Ltd. | Transistor and semiconductor device |
US9893194B2 (en) | 2013-09-12 | 2018-02-13 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
KR20180025942A (ko) | 2015-07-08 | 2018-03-09 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제작 방법 |
US9917207B2 (en) | 2015-12-25 | 2018-03-13 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
US9923001B2 (en) | 2016-01-15 | 2018-03-20 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
US9954111B2 (en) | 2014-03-18 | 2018-04-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US9954113B2 (en) | 2015-02-09 | 2018-04-24 | Semiconductor Energy Laboratory Co., Ltd. | Transistor including oxide semiconductor, semiconductor device including the transistor, and electronic device including the transistor |
US9960280B2 (en) | 2013-12-26 | 2018-05-01 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US9966473B2 (en) | 2015-05-11 | 2018-05-08 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of semiconductor device |
US9978774B2 (en) | 2016-02-12 | 2018-05-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
US9991394B2 (en) | 2015-02-20 | 2018-06-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and fabrication method thereof |
KR20180066848A (ko) | 2016-12-09 | 2018-06-19 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치, 및 반도체 장치의 제작 방법 |
US10020322B2 (en) | 2015-12-29 | 2018-07-10 | Semiconductor Energy Laboratory Co., Ltd. | Transistor and semiconductor device |
US10050152B2 (en) | 2015-12-16 | 2018-08-14 | Semiconductor Energy Laboratory Co., Ltd. | Transistor, semiconductor device, and electronic device |
US10096718B2 (en) | 2016-06-17 | 2018-10-09 | Semiconductor Energy Laboratory Co., Ltd. | Transistor, electronic device, manufacturing method of transistor |
US10096720B2 (en) | 2016-03-25 | 2018-10-09 | Semiconductor Energy Laboratory Co., Ltd. | Transistor, semiconductor device, and electronic device |
US10141344B2 (en) | 2016-11-17 | 2018-11-27 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of manufacturing the same |
US10164120B2 (en) | 2015-05-28 | 2018-12-25 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
US10186614B2 (en) | 2015-02-06 | 2019-01-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
US10192995B2 (en) | 2015-04-28 | 2019-01-29 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
US10217736B2 (en) | 2013-09-23 | 2019-02-26 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device including transistor and capacitor |
US10236287B2 (en) | 2013-09-23 | 2019-03-19 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device including semiconductor electrically surrounded by electric field of conductive film |
US10276724B2 (en) | 2015-07-14 | 2019-04-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
KR20190109436A (ko) | 2017-01-27 | 2019-09-25 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 용량 소자, 반도체 장치, 및 반도체 장치의 제작 방법 |
KR20190116998A (ko) | 2017-02-10 | 2019-10-15 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 반도체 장치의 제작 방법 |
KR20190118154A (ko) | 2017-02-17 | 2019-10-17 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 반도체 장치의 제작 방법 |
KR20190120299A (ko) | 2017-03-09 | 2019-10-23 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 반도체 장치의 제작 방법 |
US10460984B2 (en) | 2015-04-15 | 2019-10-29 | Semiconductor Energy Laboratory Co., Ltd. | Method for fabricating electrode and semiconductor device |
KR20190122804A (ko) | 2017-03-13 | 2019-10-30 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 반도체 장치의 제작 방법 |
US10475818B2 (en) | 2016-04-28 | 2019-11-12 | Semiconductor Energy Laboratory Co., Ltd. | Transistor with receded conductor, semiconductor device, and electronic device |
CN110462803A (zh) * | 2017-03-31 | 2019-11-15 | 株式会社半导体能源研究所 | 半导体装置及半导体装置的制造方法 |
US10504925B2 (en) | 2016-08-08 | 2019-12-10 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing semiconductor device |
US10553690B2 (en) | 2015-08-04 | 2020-02-04 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
KR20200018504A (ko) | 2017-06-27 | 2020-02-19 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 반도체 장치의 제작 방법 |
KR20200029449A (ko) | 2017-08-04 | 2020-03-18 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제작 방법 |
KR20200032122A (ko) | 2017-08-04 | 2020-03-25 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 반도체 장치의 제작 방법 |
KR20200033868A (ko) | 2017-07-31 | 2020-03-30 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 반도체 장치의 제작 방법 |
US10615187B2 (en) | 2016-07-27 | 2020-04-07 | Semiconductor Energy Laboratory Co., Ltd. | Transistor, semiconductor device, and electronic device |
KR20200039736A (ko) | 2017-09-01 | 2020-04-16 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 표시 장치 |
KR20200044040A (ko) | 2017-09-05 | 2020-04-28 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 반도체 장치의 제작 방법 |
KR20200044851A (ko) | 2017-09-05 | 2020-04-29 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 반도체 장치의 제작 방법 |
KR20200044855A (ko) | 2017-09-05 | 2020-04-29 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 반도체 장치의 제작 방법 |
KR20200047527A (ko) | 2017-09-01 | 2020-05-07 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 표시 장치 |
US10685983B2 (en) | 2016-11-11 | 2020-06-16 | Semiconductor Energy Laboratory Co., Ltd. | Transistor, semiconductor device, and electronic device |
KR20200069295A (ko) | 2017-10-20 | 2020-06-16 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치, 및 반도체 장치의 제작 방법 |
US10700212B2 (en) | 2016-01-28 | 2020-06-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, semiconductor wafer, module, electronic device, and manufacturing method thereof |
KR20200083211A (ko) | 2018-12-28 | 2020-07-08 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치, 및 메모리 디바이스 |
KR20200085741A (ko) | 2017-11-09 | 2020-07-15 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 반도체 장치의 제작 방법 |
US10727355B2 (en) | 2015-03-06 | 2020-07-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method of the same |
US10741587B2 (en) | 2016-03-11 | 2020-08-11 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, semiconductor wafer, module, electronic device, and manufacturing method the same |
US10784284B2 (en) | 2015-11-13 | 2020-09-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
US10868045B2 (en) | 2015-12-11 | 2020-12-15 | Semiconductor Energy Laboratory Co., Ltd. | Transistor, semiconductor device, and electronic device |
KR20210027367A (ko) | 2018-06-29 | 2021-03-10 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 반도체 장치의 제작 방법 |
US10978563B2 (en) | 2018-12-21 | 2021-04-13 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing semiconductor device |
KR20210040383A (ko) | 2018-08-09 | 2021-04-13 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 반도체 장치의 제작 방법 |
US10985278B2 (en) | 2015-07-21 | 2021-04-20 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
KR20210052462A (ko) | 2018-09-07 | 2021-05-10 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 반도체 장치의 제작 방법 |
KR20210081365A (ko) | 2018-10-26 | 2021-07-01 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치, 및 반도체 장치의 제작 방법 |
US11088286B2 (en) | 2017-09-15 | 2021-08-10 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing semiconductor device |
US11107929B2 (en) | 2018-12-21 | 2021-08-31 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US11158638B2 (en) | 2017-05-18 | 2021-10-26 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
KR20210137109A (ko) | 2019-03-12 | 2021-11-17 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 반도체 장치의 제작 방법 |
US11189736B2 (en) | 2015-07-24 | 2021-11-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
KR20220020831A (ko) | 2019-06-14 | 2022-02-21 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 반도체 장치의 제작 방법 |
KR20220027850A (ko) | 2019-07-05 | 2022-03-08 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 반도체 장치의 제작 방법 |
KR20220031020A (ko) | 2019-07-12 | 2022-03-11 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 반도체 장치의 제작 방법 |
US11289475B2 (en) | 2019-01-25 | 2022-03-29 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method of semiconductor device |
KR20220039740A (ko) | 2019-07-26 | 2022-03-29 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
US11302717B2 (en) | 2016-04-08 | 2022-04-12 | Semiconductor Energy Laboratory Co., Ltd. | Transistor and method for manufacturing the same |
KR20220052972A (ko) | 2019-08-30 | 2022-04-28 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
KR20220092517A (ko) | 2019-11-01 | 2022-07-01 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
KR20220119606A (ko) | 2019-12-27 | 2022-08-30 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 반도체 장치의 제작 방법 |
KR20220120577A (ko) | 2019-12-27 | 2022-08-30 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치, 반도체 장치의 제작 방법 |
KR20220124700A (ko) | 2020-01-10 | 2022-09-14 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 반도체 장치의 제작 방법 |
JP2022140547A (ja) * | 2014-12-02 | 2022-09-26 | 株式会社半導体エネルギー研究所 | 半導体装置 |
US11495691B2 (en) | 2018-06-08 | 2022-11-08 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US11508850B2 (en) | 2018-09-05 | 2022-11-22 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of semiconductor device |
KR20220160579A (ko) | 2020-03-31 | 2022-12-06 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 반도체 장치의 제작 방법 |
US11626037B2 (en) | 2017-08-04 | 2023-04-11 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and display device |
KR20230050353A (ko) | 2020-08-19 | 2023-04-14 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 절연막의 개질 방법 및 반도체 장치의 제작 방법 |
KR20230050329A (ko) | 2020-08-19 | 2023-04-14 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치의 제작 방법 |
KR20230052894A (ko) | 2020-08-19 | 2023-04-20 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 금속 산화물의 제조 방법 |
KR20230053616A (ko) | 2020-08-21 | 2023-04-21 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치의 제작 방법 |
KR20230054388A (ko) | 2020-08-27 | 2023-04-24 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제작 방법 |
KR20230054848A (ko) | 2020-08-27 | 2023-04-25 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
KR20230054836A (ko) | 2020-08-27 | 2023-04-25 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치의 제작 방법 |
KR20230056695A (ko) | 2020-08-27 | 2023-04-27 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치의 제작 방법 |
US11705524B2 (en) | 2018-04-27 | 2023-07-18 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing semiconductor device |
US11804551B2 (en) | 2018-07-27 | 2023-10-31 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing semiconductor device |
KR20230174174A (ko) | 2022-06-20 | 2023-12-27 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치의 제작 방법 |
WO2024009185A1 (ja) * | 2022-07-08 | 2024-01-11 | 株式会社半導体エネルギー研究所 | 蓄電システム |
KR20240007178A (ko) | 2021-05-12 | 2024-01-16 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
US11881522B2 (en) | 2018-10-05 | 2024-01-23 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method of semiconductor device |
KR20240032037A (ko) | 2021-07-09 | 2024-03-08 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 트랜지스터 |
DE102023125478A1 (de) | 2022-09-30 | 2024-04-04 | Semiconductor Energy Laboratory Co., Ltd. | Halbleitervorrichtung, Herstellungsverfahren der Halbleitervorrichtung und eines elektronischen Geräts |
US11967649B2 (en) | 2018-06-08 | 2024-04-23 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
Families Citing this family (47)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI525614B (zh) | 2011-01-05 | 2016-03-11 | 半導體能源研究所股份有限公司 | 儲存元件、儲存裝置、及信號處理電路 |
JP5827145B2 (ja) * | 2011-03-08 | 2015-12-02 | 株式会社半導体エネルギー研究所 | 信号処理回路 |
JP5839474B2 (ja) | 2011-03-24 | 2016-01-06 | 株式会社半導体エネルギー研究所 | 信号処理回路 |
TWI567736B (zh) | 2011-04-08 | 2017-01-21 | 半導體能源研究所股份有限公司 | 記憶體元件及信號處理電路 |
US8854867B2 (en) | 2011-04-13 | 2014-10-07 | Semiconductor Energy Laboratory Co., Ltd. | Memory device and driving method of the memory device |
TWI541978B (zh) | 2011-05-11 | 2016-07-11 | 半導體能源研究所股份有限公司 | 半導體裝置及半導體裝置之驅動方法 |
JP5886496B2 (ja) | 2011-05-20 | 2016-03-16 | 株式会社半導体エネルギー研究所 | 半導体装置 |
TWI570719B (zh) | 2011-05-20 | 2017-02-11 | 半導體能源研究所股份有限公司 | 儲存裝置及信號處理電路 |
JP6082189B2 (ja) | 2011-05-20 | 2017-02-15 | 株式会社半導体エネルギー研究所 | 記憶装置及び信号処理回路 |
US8982607B2 (en) | 2011-09-30 | 2015-03-17 | Semiconductor Energy Laboratory Co., Ltd. | Memory element and signal processing circuit |
US9058892B2 (en) | 2012-03-14 | 2015-06-16 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and shift register |
JP2014003594A (ja) * | 2012-05-25 | 2014-01-09 | Semiconductor Energy Lab Co Ltd | 半導体装置及びその駆動方法 |
JP6185311B2 (ja) | 2012-07-20 | 2017-08-23 | 株式会社半導体エネルギー研究所 | 電源制御回路、及び信号処理回路 |
US9171842B2 (en) * | 2012-07-30 | 2015-10-27 | Semiconductor Energy Laboratory Co., Ltd. | Sequential circuit and semiconductor device |
JP6134230B2 (ja) * | 2012-08-31 | 2017-05-24 | 株式会社神戸製鋼所 | 薄膜トランジスタおよび表示装置 |
US9853053B2 (en) | 2012-09-10 | 2017-12-26 | 3B Technologies, Inc. | Three dimension integrated circuits employing thin film transistors |
TWI627750B (zh) | 2012-09-24 | 2018-06-21 | 半導體能源研究所股份有限公司 | 半導體裝置 |
WO2014046222A1 (en) | 2012-09-24 | 2014-03-27 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
KR102094568B1 (ko) | 2012-10-17 | 2020-03-27 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그의 제작 방법 |
KR102227591B1 (ko) | 2012-10-17 | 2021-03-15 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
KR20230152795A (ko) | 2012-11-08 | 2023-11-03 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 디스플레이 장치 |
TWI661553B (zh) | 2012-11-16 | 2019-06-01 | 日商半導體能源研究所股份有限公司 | 半導體裝置 |
TWI619010B (zh) * | 2013-01-24 | 2018-03-21 | 半導體能源研究所股份有限公司 | 半導體裝置 |
KR102153110B1 (ko) * | 2013-03-06 | 2020-09-07 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체막 및 반도체 장치 |
JP6298353B2 (ja) * | 2013-05-17 | 2018-03-20 | 株式会社半導体エネルギー研究所 | 半導体装置 |
US8994430B2 (en) | 2013-05-17 | 2015-03-31 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
CN104112711B (zh) * | 2014-07-22 | 2017-05-03 | 深圳市华星光电技术有限公司 | 共平面型氧化物半导体tft基板的制作方法 |
WO2016016761A1 (en) * | 2014-07-31 | 2016-02-04 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing semiconductor device |
US9484469B2 (en) | 2014-12-16 | 2016-11-01 | International Business Machines Corporation | Thin film device with protective layer |
WO2016099580A2 (en) | 2014-12-23 | 2016-06-23 | Lupino James John | Three dimensional integrated circuits employing thin film transistors |
US9954112B2 (en) | 2015-01-26 | 2018-04-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
US9660100B2 (en) | 2015-02-06 | 2017-05-23 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
CN107406966B (zh) | 2015-03-03 | 2020-11-20 | 株式会社半导体能源研究所 | 氧化物半导体膜、包括该氧化物半导体膜的半导体装置以及包括该半导体装置的显示装置 |
DE112016001033T5 (de) * | 2015-03-03 | 2017-12-21 | Semiconductor Energy Laboratory Co., Ltd. | Halbleitervorrichtung, Verfahren zum Herstellen derselben oder Anzeigevorrichtung mit derselben |
US9825177B2 (en) | 2015-07-30 | 2017-11-21 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of a semiconductor device using multiple etching mask |
KR102084378B1 (ko) * | 2015-10-23 | 2020-03-03 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 전자 기기 |
SG10201608814YA (en) | 2015-10-29 | 2017-05-30 | Semiconductor Energy Lab Co Ltd | Semiconductor device and method for manufacturing the semiconductor device |
US9406872B1 (en) * | 2015-11-16 | 2016-08-02 | International Business Machines Corporation | Fabricating two-dimensional array of four-terminal thin film devices with surface-sensitive conductor layer |
CN109075205A (zh) * | 2016-03-02 | 2018-12-21 | 国立大学法人东京工业大学 | 氧化物半导体化合物、具备氧化物半导体化合物的层的半导体元件和层叠体 |
CN109478514A (zh) | 2016-07-26 | 2019-03-15 | 株式会社半导体能源研究所 | 半导体装置 |
WO2018051208A1 (en) | 2016-09-14 | 2018-03-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method of the same |
KR20180048327A (ko) | 2016-11-01 | 2018-05-10 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치, 및 반도체 장치의 제작 방법 |
US11031403B2 (en) | 2017-04-28 | 2021-06-08 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method of semiconductor device |
TWI794340B (zh) | 2017-12-07 | 2023-03-01 | 日商半導體能源研究所股份有限公司 | 半導體裝置以及半導體裝置的製造方法 |
KR20200123784A (ko) | 2018-02-23 | 2020-10-30 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 반도체 장치의 제작 방법 |
US11545578B2 (en) | 2018-04-27 | 2023-01-03 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing semiconductor device |
US11510002B2 (en) | 2018-08-31 | 2022-11-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004088469A (ja) * | 2002-08-27 | 2004-03-18 | Fujitsu Ltd | 不揮発性データ記憶回路を有する集積回路装置 |
JP2005268694A (ja) * | 2004-03-22 | 2005-09-29 | Sony Corp | 半導体集積回路およびその作製方法 |
JP2007123861A (ja) * | 2005-09-29 | 2007-05-17 | Semiconductor Energy Lab Co Ltd | 半導体装置及びその作製方法 |
Family Cites Families (193)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6021439B2 (ja) | 1977-09-16 | 1985-05-27 | 株式会社日立製作所 | センスアンプ |
US4284905A (en) | 1979-05-31 | 1981-08-18 | Bell Telephone Laboratories, Incorporated | IGFET Bootstrap circuit |
JPS60198861A (ja) | 1984-03-23 | 1985-10-08 | Fujitsu Ltd | 薄膜トランジスタ |
JPS61113189A (ja) | 1984-10-12 | 1986-05-31 | Fujitsu Ltd | 不揮発性ランダムアクセスメモリ装置 |
JPH0244256B2 (ja) | 1987-01-28 | 1990-10-03 | Kagaku Gijutsucho Mukizaishitsu Kenkyushocho | Ingazn2o5deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho |
JPH0244258B2 (ja) | 1987-02-24 | 1990-10-03 | Kagaku Gijutsucho Mukizaishitsu Kenkyushocho | Ingazn3o6deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho |
JPH0244260B2 (ja) | 1987-02-24 | 1990-10-03 | Kagaku Gijutsucho Mukizaishitsu Kenkyushocho | Ingazn5o8deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho |
JPS63210023A (ja) | 1987-02-24 | 1988-08-31 | Natl Inst For Res In Inorg Mater | InGaZn↓4O↓7で示される六方晶系の層状構造を有する化合物およびその製造法 |
JPH0244262B2 (ja) | 1987-02-27 | 1990-10-03 | Kagaku Gijutsucho Mukizaishitsu Kenkyushocho | Ingazn6o9deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho |
JPH0244263B2 (ja) | 1987-04-22 | 1990-10-03 | Kagaku Gijutsucho Mukizaishitsu Kenkyushocho | Ingazn7o10deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho |
US5198706A (en) | 1991-10-15 | 1993-03-30 | National Semiconductor | Ferroelectric programming cell for configurable logic |
JPH05110392A (ja) | 1991-10-16 | 1993-04-30 | Hitachi Ltd | 状態保持回路を具備する集積回路 |
JPH05251705A (ja) | 1992-03-04 | 1993-09-28 | Fuji Xerox Co Ltd | 薄膜トランジスタ |
JP3479375B2 (ja) | 1995-03-27 | 2003-12-15 | 科学技術振興事業団 | 亜酸化銅等の金属酸化物半導体による薄膜トランジスタとpn接合を形成した金属酸化物半導体装置およびそれらの製造方法 |
JP3723599B2 (ja) | 1995-04-07 | 2005-12-07 | 株式会社ルネサステクノロジ | 半導体記憶装置 |
DE69635107D1 (de) | 1995-08-03 | 2005-09-29 | Koninkl Philips Electronics Nv | Halbleiteranordnung mit einem transparenten schaltungselement |
JP3518936B2 (ja) * | 1995-08-23 | 2004-04-12 | ローム株式会社 | プログラム可能な機能装置 |
CN1101049C (zh) * | 1995-12-07 | 2003-02-05 | 中国科学院上海硅酸盐研究所 | 非挥发性集成铁电薄膜存储器 |
JP3625598B2 (ja) | 1995-12-30 | 2005-03-02 | 三星電子株式会社 | 液晶表示装置の製造方法 |
TW382670B (en) | 1996-11-21 | 2000-02-21 | Hitachi Ltd | Low power processor |
JPH10261946A (ja) | 1997-03-19 | 1998-09-29 | Mitsubishi Electric Corp | 半導体集積回路 |
CN1180265A (zh) * | 1997-05-24 | 1998-04-29 | 复旦大学 | 不挥发逻辑电路的铁电锁存技术 |
JP4109340B2 (ja) | 1997-12-26 | 2008-07-02 | 株式会社ルネサステクノロジ | 半導体集積回路装置 |
JP3080062B2 (ja) | 1998-04-06 | 2000-08-21 | 日本電気株式会社 | 半導体集積回路 |
JP2000026119A (ja) | 1998-07-09 | 2000-01-25 | Hoya Corp | 透明導電性酸化物薄膜を有する物品及びその製造方法 |
JP4170454B2 (ja) | 1998-07-24 | 2008-10-22 | Hoya株式会社 | 透明導電性酸化物薄膜を有する物品及びその製造方法 |
JP2000150861A (ja) | 1998-11-16 | 2000-05-30 | Tdk Corp | 酸化物薄膜 |
JP3276930B2 (ja) | 1998-11-17 | 2002-04-22 | 科学技術振興事業団 | トランジスタ及び半導体装置 |
JP4397062B2 (ja) | 1998-11-27 | 2010-01-13 | 株式会社ルネサステクノロジ | 電圧発生回路および半導体記憶装置 |
JP4390305B2 (ja) * | 1999-01-04 | 2009-12-24 | 株式会社ルネサステクノロジ | 半導体装置 |
TW460731B (en) | 1999-09-03 | 2001-10-21 | Ind Tech Res Inst | Electrode structure and production method of wide viewing angle LCD |
JP3735855B2 (ja) | 2000-02-17 | 2006-01-18 | 日本電気株式会社 | 半導体集積回路装置およびその駆動方法 |
JP4089858B2 (ja) | 2000-09-01 | 2008-05-28 | 国立大学法人東北大学 | 半導体デバイス |
KR20020038482A (ko) | 2000-11-15 | 2002-05-23 | 모리시타 요이찌 | 박막 트랜지스터 어레이, 그 제조방법 및 그것을 이용한표시패널 |
JP4501048B2 (ja) | 2000-12-28 | 2010-07-14 | カシオ計算機株式会社 | シフトレジスタ回路及びその駆動制御方法並びに表示駆動装置、読取駆動装置 |
JP3997731B2 (ja) | 2001-03-19 | 2007-10-24 | 富士ゼロックス株式会社 | 基材上に結晶性半導体薄膜を形成する方法 |
JP2002289859A (ja) | 2001-03-23 | 2002-10-04 | Minolta Co Ltd | 薄膜トランジスタ |
JP2002304889A (ja) | 2001-04-10 | 2002-10-18 | Foundation For The Promotion Of Industrial Science | 半導体メモリ |
JP3725046B2 (ja) * | 2001-06-06 | 2005-12-07 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JP3925839B2 (ja) | 2001-09-10 | 2007-06-06 | シャープ株式会社 | 半導体記憶装置およびその試験方法 |
JP4090716B2 (ja) | 2001-09-10 | 2008-05-28 | 雅司 川崎 | 薄膜トランジスタおよびマトリクス表示装置 |
JP4164562B2 (ja) | 2002-09-11 | 2008-10-15 | 独立行政法人科学技術振興機構 | ホモロガス薄膜を活性層として用いる透明薄膜電界効果型トランジスタ |
WO2003040441A1 (en) | 2001-11-05 | 2003-05-15 | Japan Science And Technology Agency | Natural superlattice homologous single crystal thin film, method for preparation thereof, and device using said single crystal thin film |
JP4091301B2 (ja) * | 2001-12-28 | 2008-05-28 | 富士通株式会社 | 半導体集積回路および半導体メモリ |
JP4083486B2 (ja) | 2002-02-21 | 2008-04-30 | 独立行政法人科学技術振興機構 | LnCuO(S,Se,Te)単結晶薄膜の製造方法 |
CN1445821A (zh) | 2002-03-15 | 2003-10-01 | 三洋电机株式会社 | ZnO膜和ZnO半导体层的形成方法、半导体元件及其制造方法 |
JP3933591B2 (ja) | 2002-03-26 | 2007-06-20 | 淳二 城戸 | 有機エレクトロルミネッセント素子 |
JP2003298062A (ja) * | 2002-03-29 | 2003-10-17 | Sharp Corp | 薄膜トランジスタ及びその製造方法 |
US7339187B2 (en) | 2002-05-21 | 2008-03-04 | State Of Oregon Acting By And Through The Oregon State Board Of Higher Education On Behalf Of Oregon State University | Transistor structures |
JP2004022625A (ja) | 2002-06-13 | 2004-01-22 | Murata Mfg Co Ltd | 半導体デバイス及び該半導体デバイスの製造方法 |
US7105868B2 (en) | 2002-06-24 | 2006-09-12 | Cermet, Inc. | High-electron mobility transistor with zinc oxide |
US7067843B2 (en) | 2002-10-11 | 2006-06-27 | E. I. Du Pont De Nemours And Company | Transparent oxide semiconductor thin film transistors |
US7042756B2 (en) * | 2002-10-18 | 2006-05-09 | Viciciv Technology | Configurable storage device |
JP4339103B2 (ja) | 2002-12-25 | 2009-10-07 | 株式会社半導体エネルギー研究所 | 半導体装置及び表示装置 |
JP4166105B2 (ja) | 2003-03-06 | 2008-10-15 | シャープ株式会社 | 半導体装置およびその製造方法 |
JP2004273732A (ja) | 2003-03-07 | 2004-09-30 | Sharp Corp | アクティブマトリクス基板およびその製造方法 |
JP4108633B2 (ja) | 2003-06-20 | 2008-06-25 | シャープ株式会社 | 薄膜トランジスタおよびその製造方法ならびに電子デバイス |
US6876252B2 (en) * | 2003-06-28 | 2005-04-05 | International Business Machines Corporation | Non-abrupt switching of sleep transistor of power gate structure |
US7262463B2 (en) | 2003-07-25 | 2007-08-28 | Hewlett-Packard Development Company, L.P. | Transistor including a deposited channel region having a doped portion |
US7414264B2 (en) * | 2003-12-30 | 2008-08-19 | Samsung Electronics Co., Ltd. | Poly crystalline silicon semiconductor device and method of fabricating the same |
JP3760470B2 (ja) | 2004-01-06 | 2006-03-29 | セイコーエプソン株式会社 | 記憶回路、半導体装置、及び電子機器 |
US7282782B2 (en) | 2004-03-12 | 2007-10-16 | Hewlett-Packard Development Company, L.P. | Combined binary oxide semiconductor device |
US7145174B2 (en) | 2004-03-12 | 2006-12-05 | Hewlett-Packard Development Company, Lp. | Semiconductor device |
KR101078509B1 (ko) | 2004-03-12 | 2011-10-31 | 도꾸리쯔교세이호징 가가꾸 기쥬쯔 신꼬 기꼬 | 박막 트랜지스터의 제조 방법 |
US7297977B2 (en) | 2004-03-12 | 2007-11-20 | Hewlett-Packard Development Company, L.P. | Semiconductor device |
US7211825B2 (en) | 2004-06-14 | 2007-05-01 | Yi-Chi Shih | Indium oxide-based thin film transistors and circuits |
JP4817617B2 (ja) * | 2004-06-14 | 2011-11-16 | 株式会社東芝 | 不揮発性半導体記憶装置 |
US7138825B2 (en) * | 2004-06-29 | 2006-11-21 | International Business Machines Corporation | Charge recycling power gate |
JP2006100760A (ja) | 2004-09-02 | 2006-04-13 | Casio Comput Co Ltd | 薄膜トランジスタおよびその製造方法 |
US7266707B2 (en) * | 2004-09-16 | 2007-09-04 | International Business Machines Corporation | Dynamic leakage control circuit |
US7285501B2 (en) | 2004-09-17 | 2007-10-23 | Hewlett-Packard Development Company, L.P. | Method of forming a solution processed device |
US7298084B2 (en) | 2004-11-02 | 2007-11-20 | 3M Innovative Properties Company | Methods and displays utilizing integrated zinc oxide row and column drivers in conjunction with organic light emitting diodes |
US7829444B2 (en) | 2004-11-10 | 2010-11-09 | Canon Kabushiki Kaisha | Field effect transistor manufacturing method |
US7863611B2 (en) | 2004-11-10 | 2011-01-04 | Canon Kabushiki Kaisha | Integrated circuits utilizing amorphous oxides |
WO2006051993A2 (en) | 2004-11-10 | 2006-05-18 | Canon Kabushiki Kaisha | Amorphous oxide and field effect transistor |
US7791072B2 (en) | 2004-11-10 | 2010-09-07 | Canon Kabushiki Kaisha | Display |
KR100953596B1 (ko) | 2004-11-10 | 2010-04-21 | 캐논 가부시끼가이샤 | 발광장치 |
EP1815530B1 (en) | 2004-11-10 | 2021-02-17 | Canon Kabushiki Kaisha | Field effect transistor employing an amorphous oxide |
US7453065B2 (en) | 2004-11-10 | 2008-11-18 | Canon Kabushiki Kaisha | Sensor and image pickup device |
US7154317B2 (en) * | 2005-01-11 | 2006-12-26 | Arm Limited | Latch circuit including a data retention latch |
US7579224B2 (en) | 2005-01-21 | 2009-08-25 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing a thin film semiconductor device |
US7608531B2 (en) | 2005-01-28 | 2009-10-27 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, electronic device, and method of manufacturing semiconductor device |
TWI412138B (zh) | 2005-01-28 | 2013-10-11 | Semiconductor Energy Lab | 半導體裝置,電子裝置,和半導體裝置的製造方法 |
US7858451B2 (en) | 2005-02-03 | 2010-12-28 | Semiconductor Energy Laboratory Co., Ltd. | Electronic device, semiconductor device and manufacturing method thereof |
US7948171B2 (en) | 2005-02-18 | 2011-05-24 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
US20060197092A1 (en) | 2005-03-03 | 2006-09-07 | Randy Hoffman | System and method for forming conductive material on a substrate |
US8681077B2 (en) | 2005-03-18 | 2014-03-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, and display device, driving method and electronic apparatus thereof |
US7544967B2 (en) | 2005-03-28 | 2009-06-09 | Massachusetts Institute Of Technology | Low voltage flexible organic/transparent transistor for selective gas sensing, photodetecting and CMOS device applications |
US7645478B2 (en) | 2005-03-31 | 2010-01-12 | 3M Innovative Properties Company | Methods of making displays |
US8300031B2 (en) | 2005-04-20 | 2012-10-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device comprising transistor having gate and drain connected through a current-voltage conversion element |
US7164301B2 (en) * | 2005-05-10 | 2007-01-16 | Freescale Semiconductor, Inc | State retention power gating latch circuit |
US20060288955A1 (en) | 2005-05-24 | 2006-12-28 | Wyeth | Device and method for controlling insects |
WO2006129650A1 (ja) * | 2005-05-31 | 2006-12-07 | Kyocera Corporation | 針状結晶の配列体を含む複合体およびその製造方法、ならびに光電変換素子、発光素子およびキャパシタ |
JP2006344849A (ja) | 2005-06-10 | 2006-12-21 | Casio Comput Co Ltd | 薄膜トランジスタ |
US7691666B2 (en) | 2005-06-16 | 2010-04-06 | Eastman Kodak Company | Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby |
US7402506B2 (en) | 2005-06-16 | 2008-07-22 | Eastman Kodak Company | Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby |
US7507618B2 (en) | 2005-06-27 | 2009-03-24 | 3M Innovative Properties Company | Method for making electronic devices using metal oxide nanoparticles |
DE102005030142B3 (de) * | 2005-06-28 | 2006-12-21 | Infineon Technologies Ag | Bistabile Kippstufe mit nichtflüchtiger Zustandsspeicherung |
US7430673B2 (en) * | 2005-06-30 | 2008-09-30 | Intel Corporation | Power management system for computing platform |
KR100711890B1 (ko) | 2005-07-28 | 2007-04-25 | 삼성에스디아이 주식회사 | 유기 발광표시장치 및 그의 제조방법 |
US7323909B2 (en) * | 2005-07-29 | 2008-01-29 | Sequence Design, Inc. | Automatic extension of clock gating technique to fine-grained power gating |
JP2007059128A (ja) | 2005-08-23 | 2007-03-08 | Canon Inc | 有機el表示装置およびその製造方法 |
JP4850457B2 (ja) | 2005-09-06 | 2012-01-11 | キヤノン株式会社 | 薄膜トランジスタ及び薄膜ダイオード |
JP4280736B2 (ja) | 2005-09-06 | 2009-06-17 | キヤノン株式会社 | 半導体素子 |
JP2007073705A (ja) | 2005-09-06 | 2007-03-22 | Canon Inc | 酸化物半導体チャネル薄膜トランジスタおよびその製造方法 |
JP5116225B2 (ja) | 2005-09-06 | 2013-01-09 | キヤノン株式会社 | 酸化物半導体デバイスの製造方法 |
JP5078246B2 (ja) | 2005-09-29 | 2012-11-21 | 株式会社半導体エネルギー研究所 | 半導体装置、及び半導体装置の作製方法 |
EP1998374A3 (en) | 2005-09-29 | 2012-01-18 | Semiconductor Energy Laboratory Co, Ltd. | Semiconductor device having oxide semiconductor layer and manufacturing method thereof |
EP1933293A4 (en) | 2005-10-05 | 2009-12-23 | Idemitsu Kosan Co | TFT SUBSTRATE AND METHOD FOR MANUFACTURING A TFT SUBSTRATE |
JP5037808B2 (ja) | 2005-10-20 | 2012-10-03 | キヤノン株式会社 | アモルファス酸化物を用いた電界効果型トランジスタ、及び該トランジスタを用いた表示装置 |
KR101397571B1 (ko) | 2005-11-15 | 2014-05-22 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체장치 및 그의 제조방법 |
JP5054919B2 (ja) | 2005-12-20 | 2012-10-24 | ルネサスエレクトロニクス株式会社 | 半導体集積回路装置 |
TWI292281B (en) | 2005-12-29 | 2008-01-01 | Ind Tech Res Inst | Pixel structure of active organic light emitting diode and method of fabricating the same |
US7867636B2 (en) | 2006-01-11 | 2011-01-11 | Murata Manufacturing Co., Ltd. | Transparent conductive film and method for manufacturing the same |
JP4977478B2 (ja) | 2006-01-21 | 2012-07-18 | 三星電子株式会社 | ZnOフィルム及びこれを用いたTFTの製造方法 |
US7576394B2 (en) | 2006-02-02 | 2009-08-18 | Kochi Industrial Promotion Center | Thin film transistor including low resistance conductive thin films and manufacturing method thereof |
US7977169B2 (en) * | 2006-02-15 | 2011-07-12 | Kochi Industrial Promotion Center | Semiconductor device including active layer made of zinc oxide with controlled orientations and manufacturing method thereof |
JP4819870B2 (ja) * | 2006-02-24 | 2011-11-24 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
JP4911988B2 (ja) * | 2006-02-24 | 2012-04-04 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
JP2007251100A (ja) | 2006-03-20 | 2007-09-27 | Epson Imaging Devices Corp | 電気光学装置、電子機器および半導体装置 |
KR20070101595A (ko) | 2006-04-11 | 2007-10-17 | 삼성전자주식회사 | ZnO TFT |
US20070252928A1 (en) | 2006-04-28 | 2007-11-01 | Toppan Printing Co., Ltd. | Structure, transmission type liquid crystal display, reflection type display and manufacturing method thereof |
JP5028033B2 (ja) | 2006-06-13 | 2012-09-19 | キヤノン株式会社 | 酸化物半導体膜のドライエッチング方法 |
JP4999400B2 (ja) | 2006-08-09 | 2012-08-15 | キヤノン株式会社 | 酸化物半導体膜のドライエッチング方法 |
JP4609797B2 (ja) | 2006-08-09 | 2011-01-12 | Nec液晶テクノロジー株式会社 | 薄膜デバイス及びその製造方法 |
JP5158624B2 (ja) | 2006-08-10 | 2013-03-06 | ルネサスエレクトロニクス株式会社 | 半導体記憶装置 |
JP4954639B2 (ja) * | 2006-08-25 | 2012-06-20 | パナソニック株式会社 | ラッチ回路及びこれを備えた半導体集積回路 |
JP4332545B2 (ja) | 2006-09-15 | 2009-09-16 | キヤノン株式会社 | 電界効果型トランジスタ及びその製造方法 |
JP5164357B2 (ja) | 2006-09-27 | 2013-03-21 | キヤノン株式会社 | 半導体装置及び半導体装置の製造方法 |
JP4274219B2 (ja) | 2006-09-27 | 2009-06-03 | セイコーエプソン株式会社 | 電子デバイス、有機エレクトロルミネッセンス装置、有機薄膜半導体装置 |
JP4932415B2 (ja) | 2006-09-29 | 2012-05-16 | 株式会社半導体エネルギー研究所 | 半導体装置 |
US7622371B2 (en) | 2006-10-10 | 2009-11-24 | Hewlett-Packard Development Company, L.P. | Fused nanocrystal thin film semiconductor and method |
US7511343B2 (en) | 2006-10-12 | 2009-03-31 | Xerox Corporation | Thin film transistor |
KR100829570B1 (ko) * | 2006-10-20 | 2008-05-14 | 삼성전자주식회사 | 크로스 포인트 메모리용 박막 트랜지스터 및 그 제조 방법 |
TWI442368B (zh) * | 2006-10-26 | 2014-06-21 | Semiconductor Energy Lab | 電子裝置,顯示裝置,和半導體裝置,以及其驅動方法 |
JP5063080B2 (ja) | 2006-10-27 | 2012-10-31 | 株式会社半導体エネルギー研究所 | 半導体素子の評価方法 |
TWI481195B (zh) | 2006-10-31 | 2015-04-11 | 半導體能源研究所股份有限公司 | 振盪器電路及包含該振盪器電路的半導體裝置 |
US7772021B2 (en) | 2006-11-29 | 2010-08-10 | Samsung Electronics Co., Ltd. | Flat panel displays comprising a thin-film transistor having a semiconductive oxide in its channel and methods of fabricating the same for use in flat panel displays |
JP2008140684A (ja) | 2006-12-04 | 2008-06-19 | Toppan Printing Co Ltd | カラーelディスプレイおよびその製造方法 |
JP2008151963A (ja) | 2006-12-15 | 2008-07-03 | Semiconductor Energy Lab Co Ltd | 半導体装置及び半導体装置の駆動方法 |
KR101303578B1 (ko) | 2007-01-05 | 2013-09-09 | 삼성전자주식회사 | 박막 식각 방법 |
US8207063B2 (en) | 2007-01-26 | 2012-06-26 | Eastman Kodak Company | Process for atomic layer deposition |
US8816484B2 (en) | 2007-02-09 | 2014-08-26 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US7692954B2 (en) * | 2007-03-12 | 2010-04-06 | International Business Machines Corporation | Apparatus and method for integrating nonvolatile memory capability within SRAM devices |
KR100851215B1 (ko) | 2007-03-14 | 2008-08-07 | 삼성에스디아이 주식회사 | 박막 트랜지스터 및 이를 이용한 유기 전계 발광표시장치 |
JP5197058B2 (ja) | 2007-04-09 | 2013-05-15 | キヤノン株式会社 | 発光装置とその作製方法 |
WO2008126879A1 (en) | 2007-04-09 | 2008-10-23 | Canon Kabushiki Kaisha | Light-emitting apparatus and production method thereof |
US7795613B2 (en) | 2007-04-17 | 2010-09-14 | Toppan Printing Co., Ltd. | Structure with transistor |
KR101325053B1 (ko) | 2007-04-18 | 2013-11-05 | 삼성디스플레이 주식회사 | 박막 트랜지스터 기판 및 이의 제조 방법 |
KR20080094300A (ko) | 2007-04-19 | 2008-10-23 | 삼성전자주식회사 | 박막 트랜지스터 및 그 제조 방법과 박막 트랜지스터를포함하는 평판 디스플레이 |
KR101334181B1 (ko) | 2007-04-20 | 2013-11-28 | 삼성전자주식회사 | 선택적으로 결정화된 채널층을 갖는 박막 트랜지스터 및 그제조 방법 |
JP2008277326A (ja) * | 2007-04-25 | 2008-11-13 | Canon Inc | アモルファス酸化物半導体、半導体デバイス及び薄膜トランジスタ |
US8274078B2 (en) | 2007-04-25 | 2012-09-25 | Canon Kabushiki Kaisha | Metal oxynitride semiconductor containing zinc |
JP5043499B2 (ja) * | 2007-05-02 | 2012-10-10 | 財団法人高知県産業振興センター | 電子素子及び電子素子の製造方法 |
EP1993127B1 (en) * | 2007-05-18 | 2013-04-24 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of SOI substrate |
KR101334182B1 (ko) * | 2007-05-28 | 2013-11-28 | 삼성전자주식회사 | ZnO 계 박막 트랜지스터의 제조방법 |
KR101345376B1 (ko) | 2007-05-29 | 2013-12-24 | 삼성전자주식회사 | ZnO 계 박막 트랜지스터 및 그 제조방법 |
JP5241143B2 (ja) | 2007-05-30 | 2013-07-17 | キヤノン株式会社 | 電界効果型トランジスタ |
JP4924223B2 (ja) | 2007-06-12 | 2012-04-25 | 富士通セミコンダクター株式会社 | 半導体装置 |
JP2009027701A (ja) * | 2007-06-20 | 2009-02-05 | Kawasaki Microelectronics Kk | 半導体集積回路 |
US7583121B2 (en) * | 2007-08-30 | 2009-09-01 | Freescale Semiconductor, Inc. | Flip-flop having logic state retention during a power down mode and method therefor |
US7982250B2 (en) | 2007-09-21 | 2011-07-19 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US20090085552A1 (en) | 2007-09-29 | 2009-04-02 | Olivier Franza | Power management using dynamic embedded power gate domains |
JP5688203B2 (ja) * | 2007-11-01 | 2015-03-25 | 株式会社半導体エネルギー研究所 | 半導体基板の作製方法 |
JP5430846B2 (ja) | 2007-12-03 | 2014-03-05 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
JP5215158B2 (ja) * | 2007-12-17 | 2013-06-19 | 富士フイルム株式会社 | 無機結晶性配向膜及びその製造方法、半導体デバイス |
US7619440B2 (en) * | 2008-01-30 | 2009-11-17 | Freescale Semiconductor, Inc. | Circuit having logic state retention during power-down and method therefor |
US20110001732A1 (en) | 2008-02-19 | 2011-01-06 | Hideki Morii | Shift register circuit, display device, and method for driving shift register circuit |
JP2009212736A (ja) | 2008-03-04 | 2009-09-17 | Fujitsu Microelectronics Ltd | 半導体集積回路 |
KR101477512B1 (ko) | 2008-03-18 | 2014-12-31 | 삼성전자주식회사 | 액티브 클럭 쉴딩 구조의 회로 및 이를 포함하는 반도체집적 회로 |
KR20090108468A (ko) * | 2008-04-11 | 2009-10-15 | 삼성테크윈 주식회사 | 메모리 장치 및 그 구동방법 |
JP5584960B2 (ja) | 2008-07-03 | 2014-09-10 | ソニー株式会社 | 薄膜トランジスタおよび表示装置 |
US8085076B2 (en) * | 2008-07-03 | 2011-12-27 | Broadcom Corporation | Data retention flip flop for low power applications |
TWI475282B (zh) | 2008-07-10 | 2015-03-01 | Semiconductor Energy Lab | 液晶顯示裝置和其製造方法 |
TWI469354B (zh) | 2008-07-31 | 2015-01-11 | Semiconductor Energy Lab | 半導體裝置及其製造方法 |
JP2010040552A (ja) * | 2008-07-31 | 2010-02-18 | Idemitsu Kosan Co Ltd | 薄膜トランジスタ及びその製造方法 |
US9666719B2 (en) * | 2008-07-31 | 2017-05-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
TWI642113B (zh) | 2008-08-08 | 2018-11-21 | 半導體能源研究所股份有限公司 | 半導體裝置的製造方法 |
KR101505554B1 (ko) | 2008-09-08 | 2015-03-25 | 삼성전자주식회사 | 반도체 메모리 장치 및 상기 반도체 메모리 장치의 동작 방법 |
JP4623179B2 (ja) | 2008-09-18 | 2011-02-02 | ソニー株式会社 | 薄膜トランジスタおよびその製造方法 |
JP5451280B2 (ja) | 2008-10-09 | 2014-03-26 | キヤノン株式会社 | ウルツ鉱型結晶成長用基板およびその製造方法ならびに半導体装置 |
KR101631454B1 (ko) | 2008-10-31 | 2016-06-17 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 논리회로 |
TWI585955B (zh) | 2008-11-28 | 2017-06-01 | 半導體能源研究所股份有限公司 | 光感測器及顯示裝置 |
US20100153759A1 (en) * | 2008-12-15 | 2010-06-17 | Singhal Rakshit | Power gating technique to reduce power in functional and test modes |
CN102257621B (zh) | 2008-12-19 | 2013-08-21 | 株式会社半导体能源研究所 | 晶体管的制造方法 |
KR101568356B1 (ko) * | 2009-01-13 | 2015-11-12 | 삼성전자주식회사 | 전압 바이어싱 회로와 이를 포함하는 메모리 시스템 |
KR101648927B1 (ko) | 2009-01-16 | 2016-08-17 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제작 방법 |
JP2010178167A (ja) | 2009-01-30 | 2010-08-12 | Nec Corp | 携帯無線装置及びフレキシブルケーブル |
KR101861980B1 (ko) * | 2009-11-06 | 2018-05-28 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
JP2011108342A (ja) | 2009-11-20 | 2011-06-02 | Hitachi Global Storage Technologies Netherlands Bv | ディスク・ドライブ及びリード・ライト・オフセットの測定方法 |
EP2507822B1 (en) * | 2009-12-04 | 2016-08-31 | Semiconductor Energy Laboratory Co. Ltd. | Manufacturing method of semiconductor device |
WO2011074408A1 (en) * | 2009-12-18 | 2011-06-23 | Semiconductor Energy Laboratory Co., Ltd. | Non-volatile latch circuit and logic circuit, and semiconductor device using the same |
TWI590249B (zh) * | 2010-12-03 | 2017-07-01 | 半導體能源研究所股份有限公司 | 積體電路,其驅動方法,及半導體裝置 |
-
2011
- 2011-07-15 KR KR1020137005730A patent/KR101809105B1/ko active IP Right Grant
- 2011-07-15 CN CN201711425966.XA patent/CN107947763B/zh not_active Expired - Fee Related
- 2011-07-15 CN CN201180038709.5A patent/CN103069717B/zh not_active Expired - Fee Related
- 2011-07-15 WO PCT/JP2011/066780 patent/WO2012017843A1/en active Application Filing
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- 2011-08-02 TW TW105104134A patent/TWI588941B/zh active
- 2011-08-02 TW TW106111164A patent/TWI627709B/zh not_active IP Right Cessation
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- 2012-08-06 JP JP2012174083A patent/JP5358727B2/ja active Active
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- 2013-09-26 US US14/037,450 patent/US8995174B2/en active Active
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- 2021-06-28 US US17/359,940 patent/US11677384B2/en active Active
-
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- 2022-03-01 JP JP2022030797A patent/JP7277631B2/ja active Active
-
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- 2023-04-20 US US18/136,924 patent/US20230253955A1/en active Pending
- 2023-05-08 JP JP2023076638A patent/JP2023099188A/ja active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004088469A (ja) * | 2002-08-27 | 2004-03-18 | Fujitsu Ltd | 不揮発性データ記憶回路を有する集積回路装置 |
JP2005268694A (ja) * | 2004-03-22 | 2005-09-29 | Sony Corp | 半導体集積回路およびその作製方法 |
JP2007123861A (ja) * | 2005-09-29 | 2007-05-17 | Semiconductor Energy Lab Co Ltd | 半導体装置及びその作製方法 |
Cited By (306)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2016146506A (ja) * | 2011-03-04 | 2016-08-12 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JP2013219342A (ja) * | 2012-03-14 | 2013-10-24 | Semiconductor Energy Lab Co Ltd | 酸化物半導体膜、トランジスタ、及び半導体装置 |
JP2014150481A (ja) * | 2013-02-04 | 2014-08-21 | Sharp Corp | 半導体装置 |
KR20140108120A (ko) | 2013-02-28 | 2014-09-05 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치와 그 제작 방법 |
US10014414B2 (en) | 2013-02-28 | 2018-07-03 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
US9275987B2 (en) | 2013-03-14 | 2016-03-01 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US10043914B2 (en) | 2013-04-01 | 2018-08-07 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device comprising a plurality of oxide semiconductor layers |
US9368636B2 (en) | 2013-04-01 | 2016-06-14 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing a semiconductor device comprising a plurality of oxide semiconductor layers |
KR20160003025A (ko) | 2013-04-29 | 2016-01-08 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제조 방법 |
US9768279B2 (en) | 2013-04-29 | 2017-09-19 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
US9368607B2 (en) | 2013-06-05 | 2016-06-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US9166060B2 (en) | 2013-06-05 | 2015-10-20 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US9711656B2 (en) | 2013-06-05 | 2017-07-18 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US10074733B2 (en) | 2013-07-08 | 2018-09-11 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing semiconductor device |
US9666697B2 (en) | 2013-07-08 | 2017-05-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing semiconductor device including an electron trap layer |
US11404585B2 (en) | 2013-07-08 | 2022-08-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing semiconductor device |
KR20150006365A (ko) | 2013-07-08 | 2015-01-16 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 반도체 장치의 제작 방법 |
KR20150006363A (ko) | 2013-07-08 | 2015-01-16 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 반도체 장치의 제작 방법 |
US9847429B2 (en) | 2013-07-16 | 2017-12-19 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US9281409B2 (en) | 2013-07-16 | 2016-03-08 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistor for integrated circuit |
US9443592B2 (en) | 2013-07-18 | 2016-09-13 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing semiconductor device |
US9761736B2 (en) | 2013-07-25 | 2017-09-12 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing semiconductor device |
US9741794B2 (en) | 2013-08-05 | 2017-08-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing semiconductor device |
US10699904B2 (en) | 2013-08-07 | 2020-06-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing thereof |
US9634149B2 (en) | 2013-08-07 | 2017-04-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing thereof |
KR20220097368A (ko) | 2013-08-07 | 2022-07-07 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제작 방법 |
KR20210082139A (ko) | 2013-08-07 | 2021-07-02 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제작 방법 |
US9443990B2 (en) | 2013-08-26 | 2016-09-13 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing semiconductor device for adjusting threshold thereof |
US9142593B2 (en) | 2013-08-30 | 2015-09-22 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
US9449853B2 (en) | 2013-09-04 | 2016-09-20 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device comprising electron trap layer |
US9324876B2 (en) | 2013-09-06 | 2016-04-26 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
US9269822B2 (en) | 2013-09-12 | 2016-02-23 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing semiconductor device |
US9893194B2 (en) | 2013-09-12 | 2018-02-13 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
US9406761B2 (en) | 2013-09-13 | 2016-08-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
US9842941B2 (en) | 2013-09-13 | 2017-12-12 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
KR20160055883A (ko) | 2013-09-13 | 2016-05-18 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 이의 제작방법 |
US9443934B2 (en) | 2013-09-19 | 2016-09-13 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
US10600918B2 (en) | 2013-09-23 | 2020-03-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
KR20150033543A (ko) | 2013-09-23 | 2015-04-01 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
US9397153B2 (en) | 2013-09-23 | 2016-07-19 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US10217736B2 (en) | 2013-09-23 | 2019-02-26 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device including transistor and capacitor |
US10236287B2 (en) | 2013-09-23 | 2019-03-19 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device including semiconductor electrically surrounded by electric field of conductive film |
KR20150042712A (ko) | 2013-10-11 | 2015-04-21 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 반도체 장치의 제작 방법 |
US9293592B2 (en) | 2013-10-11 | 2016-03-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing semiconductor device |
US10186604B2 (en) | 2013-10-22 | 2019-01-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method of the same |
US9455349B2 (en) | 2013-10-22 | 2016-09-27 | Semiconductor Energy Laboratory Co., Ltd. | Oxide semiconductor thin film transistor with reduced impurity diffusion |
US9780201B2 (en) | 2013-10-22 | 2017-10-03 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method of the same |
US9431435B2 (en) | 2013-10-22 | 2016-08-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method of the same |
US10103271B2 (en) | 2013-10-22 | 2018-10-16 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US9887295B2 (en) | 2013-10-22 | 2018-02-06 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistor with multiple oxide semiconductor layers |
KR20210080622A (ko) | 2013-10-22 | 2021-06-30 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치와 그 제작 방법 |
KR20160073374A (ko) | 2013-10-22 | 2016-06-24 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치와 그 제작 방법 |
US9882059B2 (en) | 2013-12-19 | 2018-01-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US10944014B2 (en) | 2013-12-19 | 2021-03-09 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US10374097B2 (en) | 2013-12-19 | 2019-08-06 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
KR20150072345A (ko) | 2013-12-19 | 2015-06-29 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
US9960280B2 (en) | 2013-12-26 | 2018-05-01 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US9627418B2 (en) | 2013-12-26 | 2017-04-18 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US10002886B2 (en) | 2013-12-26 | 2018-06-19 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
KR20160102196A (ko) | 2013-12-26 | 2016-08-29 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 반도체 장치를 제조하기 위한 방법 |
US9318618B2 (en) | 2013-12-27 | 2016-04-19 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US9472678B2 (en) | 2013-12-27 | 2016-10-18 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US9899535B2 (en) | 2013-12-27 | 2018-02-20 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US9401432B2 (en) | 2014-01-16 | 2016-07-26 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and electronic device |
KR20150091021A (ko) | 2014-01-30 | 2015-08-07 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치의 제작 방법 |
US9929044B2 (en) | 2014-01-30 | 2018-03-27 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing semiconductor device |
US9705002B2 (en) | 2014-02-05 | 2017-07-11 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, module, and electronic device |
KR20150092707A (ko) | 2014-02-05 | 2015-08-13 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치, 모듈, 및 전자 기기 |
US10096721B2 (en) | 2014-02-05 | 2018-10-09 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, module, and electronic device |
KR20210119934A (ko) | 2014-02-05 | 2021-10-06 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치, 모듈, 및 전자 기기 |
US9508864B2 (en) | 2014-02-19 | 2016-11-29 | Semiconductor Energy Laboratory Co., Ltd. | Oxide, semiconductor device, module, and electronic device |
KR20160120741A (ko) | 2014-02-19 | 2016-10-18 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 산화물, 반도체 장치, 모듈, 및 전자 장치 |
US9806201B2 (en) | 2014-03-07 | 2017-10-31 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US9954111B2 (en) | 2014-03-18 | 2018-04-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US10388797B2 (en) | 2014-03-18 | 2019-08-20 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US11581440B2 (en) | 2014-03-28 | 2023-02-14 | Semiconductor Energy Laboratory Co., Ltd. | Transistor and semiconductor device |
US10236392B2 (en) | 2014-03-28 | 2019-03-19 | Semiconductor Energy Laboratory Co., Ltd. | Transistor and semiconductor device |
US10833203B2 (en) | 2014-03-28 | 2020-11-10 | Semiconductor Energy Laboratory Co., Ltd. | Transistor and semiconductor device |
US9947801B2 (en) | 2014-03-28 | 2018-04-17 | Semiconductor Energy Laboratory Co., Ltd. | Transistor and semiconductor device |
US11888073B2 (en) | 2014-03-28 | 2024-01-30 | Semiconductor Energy Laboratory Co., Ltd. | Transistor and semiconductor device |
US10566460B2 (en) | 2014-03-28 | 2020-02-18 | Semiconductor Energy Laboratory Co., Ltd. | Transistor and semiconductor device |
US11177392B2 (en) | 2014-03-28 | 2021-11-16 | Semiconductor Energy Laboratory Co., Ltd. | Transistor and semiconductor device |
KR20210144957A (ko) | 2014-03-28 | 2021-11-30 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 트랜지스터 및 반도체 장치 |
KR20160138131A (ko) | 2014-03-28 | 2016-12-02 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 트랜지스터 및 반도체 장치 |
KR20150123718A (ko) | 2014-04-25 | 2015-11-04 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제작 방법 |
US9780226B2 (en) | 2014-04-25 | 2017-10-03 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
KR20170003674A (ko) | 2014-05-27 | 2017-01-09 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제작 방법 |
KR20150138025A (ko) | 2014-05-29 | 2015-12-09 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치, 반도체 장치의 제작 방법 및 전자 기기 |
US9537014B2 (en) | 2014-05-29 | 2017-01-03 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, method for manufacturing semiconductor device, and electronic device |
US9419018B2 (en) | 2014-05-30 | 2016-08-16 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
KR20170005124A (ko) | 2014-05-30 | 2017-01-11 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치, 모듈, 및 전자 기기 |
US9831238B2 (en) | 2014-05-30 | 2017-11-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device including insulating film having opening portion and conductive film in the opening portion |
KR20210068151A (ko) | 2014-05-30 | 2021-06-08 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 이를 제조하기 위한 방법 |
KR20170013240A (ko) | 2014-05-30 | 2017-02-06 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 이를 제조하기 위한 방법 |
US9847431B2 (en) | 2014-05-30 | 2017-12-19 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, module, and electronic device |
US9865588B2 (en) | 2014-05-30 | 2018-01-09 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and electronic device |
US10050062B2 (en) | 2014-05-30 | 2018-08-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
US10229906B2 (en) | 2014-05-30 | 2019-03-12 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device including insulating film having opening portion and conductive film in the opening portion |
US9455337B2 (en) | 2014-06-18 | 2016-09-27 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
US9887300B2 (en) | 2014-06-18 | 2018-02-06 | Semiconductor Energy Laboratory Co., Ltd. | Transistor and semiconductor device |
JP2016006839A (ja) * | 2014-06-20 | 2016-01-14 | 三菱瓦斯化学株式会社 | 少なくともインジウム、ガリウム、亜鉛およびシリコンを含む酸化物のエッチング液およびエッチング方法 |
US10002884B2 (en) | 2014-07-04 | 2018-06-19 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US9647129B2 (en) | 2014-07-04 | 2017-05-09 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US9812466B2 (en) | 2014-08-08 | 2017-11-07 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US9543295B2 (en) | 2014-09-04 | 2017-01-10 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
KR20160028959A (ko) | 2014-09-04 | 2016-03-14 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
US9773820B2 (en) | 2014-10-01 | 2017-09-26 | Semiconductor Energy Laboratory Co., Ltd. | Wiring layer and manufacturing method therefor |
US11211408B2 (en) | 2014-10-01 | 2021-12-28 | Semiconductor Energy Laboratory Co., Ltd. | Wiring layer and manufacturing method therefor |
US11616085B2 (en) | 2014-10-01 | 2023-03-28 | Semiconductor Energy Laboratory Co., Ltd. | Wiring layer and manufacturing method therefor |
US10644039B2 (en) | 2014-10-01 | 2020-05-05 | Semiconductor Energy Laboratory Co., Ltd. | Wiring layer and manufacturing method therefor |
US11901372B2 (en) | 2014-10-01 | 2024-02-13 | Semiconductor Energy Laboratory Co., Ltd. | Wiring layer and manufacturing method therefor |
KR20230002234A (ko) | 2014-10-01 | 2023-01-05 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 전자 기기 |
US10304864B2 (en) | 2014-10-01 | 2019-05-28 | Semiconductor Energy Laboratory Co., Ltd. | Wiring layer and manufacturing method therefor |
KR20160039546A (ko) | 2014-10-01 | 2016-04-11 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 배선층 및 그 제작 방법 |
KR20230047993A (ko) | 2014-11-21 | 2023-04-10 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
US9590115B2 (en) | 2014-11-21 | 2017-03-07 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
KR20160061262A (ko) | 2014-11-21 | 2016-05-31 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
KR20200131204A (ko) | 2014-11-21 | 2020-11-23 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
KR20210071897A (ko) | 2014-11-21 | 2021-06-16 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
KR20220068212A (ko) | 2014-11-21 | 2022-05-25 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
KR20240036540A (ko) | 2014-11-21 | 2024-03-20 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
JP7165838B2 (ja) | 2014-12-02 | 2022-11-04 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JP2022140547A (ja) * | 2014-12-02 | 2022-09-26 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JP2016116220A (ja) * | 2014-12-16 | 2016-06-23 | 株式会社半導体エネルギー研究所 | 半導体装置、及び電子機器 |
US9812587B2 (en) | 2015-01-26 | 2017-11-07 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
US10186614B2 (en) | 2015-02-06 | 2019-01-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
US9954113B2 (en) | 2015-02-09 | 2018-04-24 | Semiconductor Energy Laboratory Co., Ltd. | Transistor including oxide semiconductor, semiconductor device including the transistor, and electronic device including the transistor |
US9831309B2 (en) | 2015-02-11 | 2017-11-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
US9768318B2 (en) | 2015-02-12 | 2017-09-19 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
US10199508B2 (en) | 2015-02-12 | 2019-02-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
US9991394B2 (en) | 2015-02-20 | 2018-06-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and fabrication method thereof |
US9947800B2 (en) | 2015-03-02 | 2018-04-17 | Semiconductor Energy Laboratory Co., Ltd. | Transistor, method for manufacturing transistor, semiconductor device, and electronic device |
US9685560B2 (en) | 2015-03-02 | 2017-06-20 | Semiconductor Energy Laboratory Co., Ltd. | Transistor, method for manufacturing transistor, semiconductor device, and electronic device |
US11489065B2 (en) | 2015-03-03 | 2022-11-01 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
US9865712B2 (en) | 2015-03-03 | 2018-01-09 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
US10446671B2 (en) | 2015-03-03 | 2019-10-15 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
US10879381B2 (en) | 2015-03-03 | 2020-12-29 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
US10727355B2 (en) | 2015-03-06 | 2020-07-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method of the same |
US9882061B2 (en) | 2015-03-17 | 2018-01-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
US9653479B2 (en) | 2015-03-19 | 2017-05-16 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and electronic device |
KR20160112965A (ko) | 2015-03-19 | 2016-09-28 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 전자 기기 |
US10050060B2 (en) | 2015-03-19 | 2018-08-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and electronic device |
US10062790B2 (en) | 2015-03-27 | 2018-08-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and electronic device |
KR20230052858A (ko) | 2015-03-27 | 2023-04-20 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 전자 기기 |
US10522691B2 (en) | 2015-03-27 | 2019-12-31 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and electronic device |
US11538940B2 (en) | 2015-03-27 | 2022-12-27 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and electronic device |
US9837546B2 (en) | 2015-03-27 | 2017-12-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and electronic device |
KR20160115829A (ko) | 2015-03-27 | 2016-10-06 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 전자 기기 |
US11574944B2 (en) | 2015-03-30 | 2023-02-07 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device including step of simultaneous formation of plurality of contact openings |
KR20160117233A (ko) | 2015-03-30 | 2016-10-10 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치의 제작 방법 |
KR20220152977A (ko) | 2015-03-30 | 2022-11-17 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치의 제작 방법 |
US10438982B2 (en) | 2015-03-30 | 2019-10-08 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device including step of simultaneous formation of plurality of contact openings |
US11004882B2 (en) | 2015-03-30 | 2021-05-11 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
US10693013B2 (en) | 2015-04-13 | 2020-06-23 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method of the same |
KR20220126793A (ko) | 2015-04-13 | 2022-09-16 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
KR20230098354A (ko) | 2015-04-13 | 2023-07-03 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
US11217703B2 (en) | 2015-04-13 | 2022-01-04 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method of the same |
KR20170137125A (ko) | 2015-04-13 | 2017-12-12 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제작 방법 |
US10460984B2 (en) | 2015-04-15 | 2019-10-29 | Semiconductor Energy Laboratory Co., Ltd. | Method for fabricating electrode and semiconductor device |
US11004727B2 (en) | 2015-04-15 | 2021-05-11 | Semiconductor Energy Laboratory Co., Ltd. | Method for fabricating electrode and semiconductor device |
US11791201B2 (en) | 2015-04-15 | 2023-10-17 | Semiconductor Energy Laboratory Co., Ltd. | Method for fabricating electrode and semiconductor device |
KR20220151034A (ko) | 2015-04-20 | 2022-11-11 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 전자 기기 |
KR20170137822A (ko) | 2015-04-20 | 2017-12-13 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 전자 기기 |
US10591791B2 (en) | 2015-04-20 | 2020-03-17 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and electronic device |
US10192995B2 (en) | 2015-04-28 | 2019-01-29 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
US10950734B2 (en) | 2015-04-28 | 2021-03-16 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
US9966473B2 (en) | 2015-05-11 | 2018-05-08 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of semiconductor device |
US10546958B2 (en) | 2015-05-11 | 2020-01-28 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of semiconductor device |
US10164120B2 (en) | 2015-05-28 | 2018-12-25 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
US10424676B2 (en) | 2015-07-08 | 2019-09-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
US10181531B2 (en) | 2015-07-08 | 2019-01-15 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device including transistor having low parasitic capacitance |
KR20180025942A (ko) | 2015-07-08 | 2018-03-09 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제작 방법 |
US10763373B2 (en) | 2015-07-14 | 2020-09-01 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US11393930B2 (en) | 2015-07-14 | 2022-07-19 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US10276724B2 (en) | 2015-07-14 | 2019-04-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US10985278B2 (en) | 2015-07-21 | 2021-04-20 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
US11189736B2 (en) | 2015-07-24 | 2021-11-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
US11217668B2 (en) | 2015-08-04 | 2022-01-04 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
US10553690B2 (en) | 2015-08-04 | 2020-02-04 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
US9899424B2 (en) | 2015-08-21 | 2018-02-20 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and electronic device |
US9666606B2 (en) | 2015-08-21 | 2017-05-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and electronic device |
US9773919B2 (en) | 2015-08-26 | 2017-09-26 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
US9935203B2 (en) | 2015-08-26 | 2018-04-03 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
KR20240037209A (ko) | 2015-09-18 | 2024-03-21 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 전자 기기 |
US10236387B2 (en) | 2015-09-18 | 2019-03-19 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and electronic device |
KR20170034318A (ko) | 2015-09-18 | 2017-03-28 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 전자 기기 |
US10971491B2 (en) | 2015-10-30 | 2021-04-06 | Semiconductor Energy Laboratory Co., Ltd. | Method for forming capacitor, semiconductor device, module, and electronic device |
KR20230169056A (ko) | 2015-10-30 | 2023-12-15 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 용량 소자, 반도체 장치, 모듈, 및 전자 기기의 제작 방법 |
KR20170051270A (ko) | 2015-10-30 | 2017-05-11 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 용량 소자, 반도체 장치, 모듈, 및 전자 기기의 제작 방법 |
US10002866B2 (en) | 2015-10-30 | 2018-06-19 | Semiconductor Energy Laboratory Co., Ltd. | Method for forming capacitor, semiconductor device, module, and electronic device |
US10784284B2 (en) | 2015-11-13 | 2020-09-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
US11271013B2 (en) | 2015-11-13 | 2022-03-08 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device including a plug |
US9825181B2 (en) | 2015-12-11 | 2017-11-21 | Semiconductor Energy Laboratory Co., Ltd. | Transistor, circuit, semiconductor device, display device, and electronic device |
US10868045B2 (en) | 2015-12-11 | 2020-12-15 | Semiconductor Energy Laboratory Co., Ltd. | Transistor, semiconductor device, and electronic device |
US10050152B2 (en) | 2015-12-16 | 2018-08-14 | Semiconductor Energy Laboratory Co., Ltd. | Transistor, semiconductor device, and electronic device |
US9917207B2 (en) | 2015-12-25 | 2018-03-13 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
US10020322B2 (en) | 2015-12-29 | 2018-07-10 | Semiconductor Energy Laboratory Co., Ltd. | Transistor and semiconductor device |
US9923001B2 (en) | 2016-01-15 | 2018-03-20 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
US10700212B2 (en) | 2016-01-28 | 2020-06-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, semiconductor wafer, module, electronic device, and manufacturing method thereof |
US9978774B2 (en) | 2016-02-12 | 2018-05-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
US10367005B2 (en) | 2016-02-12 | 2019-07-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
KR20180124032A (ko) | 2016-02-12 | 2018-11-20 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제작 방법 |
US9882064B2 (en) | 2016-03-10 | 2018-01-30 | Semiconductor Energy Laboratory Co., Ltd. | Transistor and electronic device |
US10741587B2 (en) | 2016-03-11 | 2020-08-11 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, semiconductor wafer, module, electronic device, and manufacturing method the same |
US10096720B2 (en) | 2016-03-25 | 2018-10-09 | Semiconductor Energy Laboratory Co., Ltd. | Transistor, semiconductor device, and electronic device |
US11302717B2 (en) | 2016-04-08 | 2022-04-12 | Semiconductor Energy Laboratory Co., Ltd. | Transistor and method for manufacturing the same |
US10475818B2 (en) | 2016-04-28 | 2019-11-12 | Semiconductor Energy Laboratory Co., Ltd. | Transistor with receded conductor, semiconductor device, and electronic device |
US10777685B2 (en) | 2016-06-09 | 2020-09-15 | Semiconductor Energy Laboratory Co., Ltd. | Transistor |
KR20170139447A (ko) | 2016-06-09 | 2017-12-19 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 트랜지스터 |
US10096718B2 (en) | 2016-06-17 | 2018-10-09 | Semiconductor Energy Laboratory Co., Ltd. | Transistor, electronic device, manufacturing method of transistor |
TWI723187B (zh) * | 2016-06-30 | 2021-04-01 | 日商半導體能源硏究所股份有限公司 | 半導體裝置及半導體裝置的工作方法 |
US10090022B2 (en) | 2016-06-30 | 2018-10-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for operating the semiconductor device |
KR20180003432A (ko) | 2016-06-30 | 2018-01-09 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 반도체 장치의 동작 방법 |
US10615187B2 (en) | 2016-07-27 | 2020-04-07 | Semiconductor Energy Laboratory Co., Ltd. | Transistor, semiconductor device, and electronic device |
US10504925B2 (en) | 2016-08-08 | 2019-12-10 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing semiconductor device |
US10685983B2 (en) | 2016-11-11 | 2020-06-16 | Semiconductor Energy Laboratory Co., Ltd. | Transistor, semiconductor device, and electronic device |
US10141344B2 (en) | 2016-11-17 | 2018-11-27 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of manufacturing the same |
KR20180066848A (ko) | 2016-12-09 | 2018-06-19 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치, 및 반도체 장치의 제작 방법 |
US10388796B2 (en) | 2016-12-09 | 2019-08-20 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
US11380688B2 (en) | 2017-01-27 | 2022-07-05 | Semiconductor Energy Laboratory Co., Ltd. | Capacitor, semiconductor device, and manufacturing method of semiconductor device |
US11729965B2 (en) | 2017-01-27 | 2023-08-15 | Semiconductor Energy Laboratory Co., Ltd. | Capacitor, semiconductor device, and manufacturing method of semiconductor device |
KR20230149863A (ko) | 2017-01-27 | 2023-10-27 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 용량 소자, 반도체 장치, 및 반도체 장치의 제작 방법 |
KR20190109436A (ko) | 2017-01-27 | 2019-09-25 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 용량 소자, 반도체 장치, 및 반도체 장치의 제작 방법 |
KR20230041843A (ko) | 2017-01-27 | 2023-03-24 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 용량 소자, 반도체 장치, 및 반도체 장치의 제작 방법 |
KR20190116998A (ko) | 2017-02-10 | 2019-10-15 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 반도체 장치의 제작 방법 |
KR20190118154A (ko) | 2017-02-17 | 2019-10-17 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 반도체 장치의 제작 방법 |
US10923477B2 (en) | 2017-02-17 | 2021-02-16 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing semiconductor device |
KR20190120299A (ko) | 2017-03-09 | 2019-10-23 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 반도체 장치의 제작 방법 |
US11004961B2 (en) | 2017-03-13 | 2021-05-11 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing semiconductor device |
US11955538B2 (en) | 2017-03-13 | 2024-04-09 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing semiconductor device |
KR20190122804A (ko) | 2017-03-13 | 2019-10-30 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 반도체 장치의 제작 방법 |
DE112018001295T5 (de) | 2017-03-13 | 2020-01-02 | Semiconductor Energy Laboratory Co., Ltd. | Halbleitervorrichtung und Herstellungsverfahren für eine Halbleitervorrichtung |
US11670705B2 (en) | 2017-03-13 | 2023-06-06 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing semiconductor device |
CN110462803A (zh) * | 2017-03-31 | 2019-11-15 | 株式会社半导体能源研究所 | 半导体装置及半导体装置的制造方法 |
KR20190133024A (ko) | 2017-03-31 | 2019-11-29 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 반도체 장치의 제작 방법 |
CN110462803B (zh) * | 2017-03-31 | 2023-11-07 | 株式会社半导体能源研究所 | 半导体装置及半导体装置的制造方法 |
US11158638B2 (en) | 2017-05-18 | 2021-10-26 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
KR20200018504A (ko) | 2017-06-27 | 2020-02-19 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 반도체 장치의 제작 방법 |
US11056491B2 (en) | 2017-06-27 | 2021-07-06 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing semiconductor device |
KR20200033868A (ko) | 2017-07-31 | 2020-03-30 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 반도체 장치의 제작 방법 |
US11257722B2 (en) | 2017-07-31 | 2022-02-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having oxide containing gallium indium and zinc |
US11626037B2 (en) | 2017-08-04 | 2023-04-11 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and display device |
KR20200032122A (ko) | 2017-08-04 | 2020-03-25 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 반도체 장치의 제작 방법 |
KR20240014625A (ko) | 2017-08-04 | 2024-02-01 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제작 방법 |
KR20230168211A (ko) | 2017-08-04 | 2023-12-12 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 반도체 장치의 제작 방법 |
US11101386B2 (en) | 2017-08-04 | 2021-08-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
KR20200029449A (ko) | 2017-08-04 | 2020-03-18 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제작 방법 |
KR20200039736A (ko) | 2017-09-01 | 2020-04-16 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 표시 장치 |
US11069816B2 (en) | 2017-09-01 | 2021-07-20 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and display device |
KR20200047527A (ko) | 2017-09-01 | 2020-05-07 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 표시 장치 |
US11693288B2 (en) | 2017-09-01 | 2023-07-04 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and display device |
US11237444B2 (en) | 2017-09-01 | 2022-02-01 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and display device |
US11742431B2 (en) | 2017-09-05 | 2023-08-29 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing semiconductor device |
KR20230133951A (ko) | 2017-09-05 | 2023-09-19 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 반도체 장치의 제작 방법 |
KR20200044040A (ko) | 2017-09-05 | 2020-04-28 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 반도체 장치의 제작 방법 |
KR20200044851A (ko) | 2017-09-05 | 2020-04-29 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 반도체 장치의 제작 방법 |
US11152513B2 (en) | 2017-09-05 | 2021-10-19 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing semiconductor device |
KR20200044855A (ko) | 2017-09-05 | 2020-04-29 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 반도체 장치의 제작 방법 |
US11088286B2 (en) | 2017-09-15 | 2021-08-10 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing semiconductor device |
US11177176B2 (en) | 2017-10-20 | 2021-11-16 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing semiconductor device |
KR20200069295A (ko) | 2017-10-20 | 2020-06-16 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치, 및 반도체 장치의 제작 방법 |
US11211467B2 (en) | 2017-11-09 | 2021-12-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing semiconductor device |
KR20200085741A (ko) | 2017-11-09 | 2020-07-15 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 반도체 장치의 제작 방법 |
US11705524B2 (en) | 2018-04-27 | 2023-07-18 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing semiconductor device |
US11967649B2 (en) | 2018-06-08 | 2024-04-23 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US11495691B2 (en) | 2018-06-08 | 2022-11-08 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US11495601B2 (en) | 2018-06-29 | 2022-11-08 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method of semiconductor device |
KR20210027367A (ko) | 2018-06-29 | 2021-03-10 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 반도체 장치의 제작 방법 |
US11804551B2 (en) | 2018-07-27 | 2023-10-31 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing semiconductor device |
KR20210040383A (ko) | 2018-08-09 | 2021-04-13 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 반도체 장치의 제작 방법 |
US11508850B2 (en) | 2018-09-05 | 2022-11-22 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of semiconductor device |
US11942370B2 (en) | 2018-09-05 | 2024-03-26 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of semiconductor device |
KR20210052462A (ko) | 2018-09-07 | 2021-05-10 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 반도체 장치의 제작 방법 |
US11881522B2 (en) | 2018-10-05 | 2024-01-23 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method of semiconductor device |
KR20210081365A (ko) | 2018-10-26 | 2021-07-01 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치, 및 반도체 장치의 제작 방법 |
US11107929B2 (en) | 2018-12-21 | 2021-08-31 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US10978563B2 (en) | 2018-12-21 | 2021-04-13 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing semiconductor device |
US11211461B2 (en) | 2018-12-28 | 2021-12-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and memory device |
KR20200083211A (ko) | 2018-12-28 | 2020-07-08 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치, 및 메모리 디바이스 |
US11289475B2 (en) | 2019-01-25 | 2022-03-29 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method of semiconductor device |
KR20210137109A (ko) | 2019-03-12 | 2021-11-17 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 반도체 장치의 제작 방법 |
US11830951B2 (en) | 2019-03-12 | 2023-11-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device including transistor and capacitor |
KR20220020831A (ko) | 2019-06-14 | 2022-02-21 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 반도체 장치의 제작 방법 |
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KR20220092517A (ko) | 2019-11-01 | 2022-07-01 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
KR20220120577A (ko) | 2019-12-27 | 2022-08-30 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치, 반도체 장치의 제작 방법 |
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KR20220124700A (ko) | 2020-01-10 | 2022-09-14 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 반도체 장치의 제작 방법 |
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KR20230050329A (ko) | 2020-08-19 | 2023-04-14 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치의 제작 방법 |
KR20230052894A (ko) | 2020-08-19 | 2023-04-20 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 금속 산화물의 제조 방법 |
KR20230050353A (ko) | 2020-08-19 | 2023-04-14 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 절연막의 개질 방법 및 반도체 장치의 제작 방법 |
KR20230053616A (ko) | 2020-08-21 | 2023-04-21 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치의 제작 방법 |
KR20230056695A (ko) | 2020-08-27 | 2023-04-27 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치의 제작 방법 |
DE112021004474T5 (de) | 2020-08-27 | 2023-08-10 | Semiconductor Energy Laboratory Co., Ltd. | Halbleitervorrichtung |
KR20230054836A (ko) | 2020-08-27 | 2023-04-25 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치의 제작 방법 |
KR20230054848A (ko) | 2020-08-27 | 2023-04-25 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
KR20230054388A (ko) | 2020-08-27 | 2023-04-24 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제작 방법 |
KR20240007178A (ko) | 2021-05-12 | 2024-01-16 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
KR20240032037A (ko) | 2021-07-09 | 2024-03-08 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 트랜지스터 |
KR20230174174A (ko) | 2022-06-20 | 2023-12-27 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치의 제작 방법 |
WO2024009185A1 (ja) * | 2022-07-08 | 2024-01-11 | 株式会社半導体エネルギー研究所 | 蓄電システム |
DE102023125478A1 (de) | 2022-09-30 | 2024-04-04 | Semiconductor Energy Laboratory Co., Ltd. | Halbleitervorrichtung, Herstellungsverfahren der Halbleitervorrichtung und eines elektronischen Geräts |
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