CN101814529B - 薄膜晶体管及其制造方法,以及半导体装置 - Google Patents

薄膜晶体管及其制造方法,以及半导体装置 Download PDF

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Publication number
CN101814529B
CN101814529B CN201010116532.3A CN201010116532A CN101814529B CN 101814529 B CN101814529 B CN 101814529B CN 201010116532 A CN201010116532 A CN 201010116532A CN 101814529 B CN101814529 B CN 101814529B
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layer
oxide semiconductor
forming
conductive
conductive film
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CN101814529A (zh
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今藤敏和
岸田英幸
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to CN201810285306.4A priority Critical patent/CN108447775B/zh
Priority to CN201510170872.7A priority patent/CN104733515B/zh
Priority to CN202211007125.8A priority patent/CN115332053A/zh
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  • Condensed Matter Physics & Semiconductors (AREA)
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CN201010116532.3A 2009-02-20 2010-02-10 薄膜晶体管及其制造方法,以及半导体装置 Expired - Fee Related CN101814529B (zh)

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CN201810285306.4A CN108447775B (zh) 2009-02-20 2010-02-10 薄膜晶体管及其制造方法，以及半导体装置
CN201510170872.7A CN104733515B (zh) 2009-02-20 2010-02-10 薄膜晶体管及其制造方法，以及半导体装置
CN202211007125.8A CN115332053A (zh) 2009-02-20 2010-02-10 薄膜晶体管及其制造方法，以及半导体装置

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JP2009037912 2009-02-20

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CN202211007125.8A Division CN115332053A (zh) 2009-02-20 2010-02-10 薄膜晶体管及其制造方法，以及半导体装置
CN201810285306.4A Division CN108447775B (zh) 2009-02-20 2010-02-10 薄膜晶体管及其制造方法，以及半导体装置

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US (13) US8247276B2 (enExample)
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KR (12) KR101479917B1 (enExample)
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US8247276B2 (en) * 2009-02-20 2012-08-21 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor, method for manufacturing the same, and semiconductor device
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