CN109659355B - 常关型氧化镓场效应晶体管结构 - Google Patents

常关型氧化镓场效应晶体管结构 Download PDF

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CN109659355B
CN109659355B CN201811488059.4A CN201811488059A CN109659355B CN 109659355 B CN109659355 B CN 109659355B CN 201811488059 A CN201811488059 A CN 201811488059A CN 109659355 B CN109659355 B CN 109659355B
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gallium oxide
layer
normally
effect transistor
field effect
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CN109659355A (zh
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吕元杰
王元刚
周幸叶
谭鑫
宋旭波
梁士雄
冯志红
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CETC 13 Research Institute
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Abstract

本发明提供了一种常关型氧化镓场效应晶体管结构，属于半导体器件技术领域，自下至上包括衬底层和n型掺杂氧化镓沟道层，所述n型掺杂氧化镓沟道层上设有源极、漏极和栅极，所述栅极位于所述源极和所述漏极之间，所述栅极下方的所述n型掺杂氧化镓沟道层内设有无电子沟道区。本发明提供的常关型氧化镓场效应晶体管结构，无需在栅下制备凹槽，而是通过高温氧化形成无电子沟道区，在无电子沟道区上形成栅极，避免了刻蚀损伤和刻蚀深度不可控的问题，提高了饱和电流和击穿电压。

Description

常关型氧化镓场效应晶体管结构
技术领域
本发明属于半导体器件技术领域，更具体地说，是涉及一种常关型氧化镓场效应晶体管结构。
背景技术
由于缺乏有效的P型掺杂和注入技术，常关型氧化镓场效应晶体管通常采用栅下深凹槽技术实现，凹槽一般通过干法刻蚀实现。利用栅下深凹槽技术实现常关型氧化镓场效应晶体管器件，刻蚀深度不可控，阈值不稳定；氧化镓具有较强的抗刻蚀性，干法刻蚀会导致栅下凹槽表面粗糙不平整，从而会导致器件工作时栅下区域出现尖峰电场，影响器件的击穿特性，同时，刻蚀会引入材料损伤问题，会严重影响器件饱和电流和击穿电压。
发明内容
本发明的目的在于提供一种常关型氧化镓场效应晶体管结构，以解决现有栅下深凹槽技术存在的刻蚀深度不可控、存在刻蚀损伤、表面粗糙、阙值不稳定、严重影响饱和电流和击穿电压等技术问题。
为实现上述目的，本发明采用的技术方案是：提供一种常关型氧化镓场效应晶体管结构，自下至上包括衬底层和n型掺杂氧化镓沟道层，所述n型掺杂氧化镓沟道层上设有源极、漏极和栅极，所述栅极位于所述源极和所述漏极之间，所述栅极下方的所述n型掺杂氧化镓沟道层内设有无电子沟道区。
进一步地，所述无电子沟道区的长度小于等于所述栅极的长度。
进一步地，所述无电子沟道区的数量为大于等于1的整数，所述栅极的数量为大于等于1的整数，且所述无电子沟道区均位于所述栅极的下方。
进一步地，所述衬底层为至少一层半导体材料、金属材料或者绝缘介质，其中，与所述n型掺杂氧化镓沟道层相连接的所述衬底层为绝缘介质层。
进一步地，所述n型掺杂氧化镓沟道层自下至上包括第一n型掺杂氧化镓沟道层和第二n型掺杂氧化镓沟道层，所述第一n型掺杂氧化镓沟道层和所述第二n型掺杂氧化镓沟道层的掺杂浓度不相等。
进一步地，所述的常关型氧化镓场效应晶体管结构还包括场板，所述场板为源场板、栅场板和漏场板，或者为其中的任意一个，或者为其中的任意两个。
进一步地，所述n型掺杂氧化镓沟道层与所述栅极之间设有栅介质层。
进一步地，所述源极和所述栅极之间、所述漏极和所述栅极之间具有钝化层。
进一步地，所述钝化层为一层绝缘介质或者多层绝缘介质。
本发明提供的常关型氧化镓场效应晶体管结构的有益效果在于：与现有技术相比，本发明常关型氧化镓场效应晶体管结构，不需要干法刻蚀工艺，避免了刻蚀导致的表面粗糙、材料损伤和刻蚀不均匀等问题，有利于降低器件的漏电特性，提升器件的耐压特性和开关特性，同时能够提升器件阈值电压的均匀性，利于大规模生产。
本发明另一目的在于提供一种常关型氧化镓场效应晶体管结构的制备方法，包括：
在n型掺杂氧化镓沟道层上淀积掩膜层，所述掩膜层为金属或者绝缘介质；
利用光刻、显影、干法刻蚀或者湿法腐蚀方法去除待制作的无电子沟道区上方的掩膜层；
在氧气氛围进行高温退火，形成无电子沟道区；
所述高温退火温度为300℃-1300℃，高温退火时间≥30s。
本发明制备方法的效果在于：与现有技术相比，本发明不需要干法刻蚀工艺，避免了刻蚀导致的表面粗糙、材料损伤和刻蚀不均匀等问题，有利于降低器件的漏电特性，提升器件的耐压特性和开关特性，同时能够提升器件阈值电压的均匀性，利于大规模生产。此外，高温退火能够修复掩膜区域的材料的缺陷，有望进一步提升器件性能。
附图说明
为了更清楚地说明本发明实施例中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1为本发明实施例提供的常关型氧化镓场效应晶体管结构的结构示意图；
图2为本发明实施例提供的带栅场板的常关型氧化镓场效应晶体管结构的结构示意图。
其中，图中：
1-衬底层；11-蓝宝石衬底层；12-氧化镓沟道层；2-n型掺杂氧化镓沟道层；21-第一n型掺杂氧化镓沟道层；22-第二n型掺杂氧化镓沟道层；3-源极；4-栅极；5-漏极；6-无电子沟道区；7-栅介质层；8-钝化层；9-栅场板。
具体实施方式
为了使本发明所要解决的技术问题、技术方案及有益效果更加清楚明白，以下结合附图及实施例，对本发明进行进一步详细说明。应当理解，此处所描述的具体实施例仅仅用以解释本发明，并不用于限定本发明。
请一并参阅图1至图2，现对本发明提供的常关型氧化镓场效应晶体管结构进行说明。所述常关型氧化镓场效应晶体管结构，自下至上包括1和n型掺杂氧化镓沟道层2，所述n型掺杂氧化镓沟道层2上设有源极3、漏极5和栅极4，所述栅极4位于所述源极3和所述漏极5之间，所述栅极4下方的所述n型掺杂氧化镓沟道层2内设有无电子沟道区6。
本发明提供的常关型氧化镓场效应晶体管结构，与现有技术相比，不需要干法刻蚀工艺，避免了刻蚀导致的表面粗糙、材料损伤和刻蚀不均匀等问题，有利于降低器件的漏电特性，提升器件的耐压特性和开关特性，同时能够提升器件阈值电压的均匀性，利于大规模生产。
请参阅图1，作为本发明提供的常关型氧化镓场效应晶体管结构的一种具体实施方式，所述无电子沟道区6的长度小于等于所述栅极4的长度。
请参阅图1，作为本发明提供的常关型氧化镓场效应晶体管结构的一种具体实施方式，所述无电子沟道区6的数量为大于等于1的整数，所述栅极4的数量为大于等于1的整数，且所述无电子沟道区6均位于所述栅极4的下方。
请参阅图1，作为本发明提供的常关型氧化镓场效应晶体管结构的一种具体实施方式，所述1为至少一层半导体材料、金属材料或者绝缘介质，其中，与所述n型掺杂氧化镓沟道层2相连接的所述1为绝缘介质层。其中，半导体材料为Ga2O3、GaN、AlN等，金属材料为镍、钛、铂、钨等，绝缘介质为SiO2、SiN、Al2O3等。
请参阅图1，作为本发明提供的常关型氧化镓场效应晶体管结构的一种具体实施方式，所述衬底层1自下至上包括蓝宝石衬底层11和氧化镓沟道层12。
请参阅图1，作为本发明提供的常关型氧化镓场效应晶体管结构的一种具体实施方式，所述n型掺杂氧化镓沟道层2自下至上包括第一n型掺杂氧化镓沟道层21和第二n型掺杂氧化镓沟道层22，所述第一n型掺杂氧化镓沟道层和所述第二n型掺杂氧化镓沟道层的掺杂浓度不相等。两层浓度不相同有利于提高器件的跨导，改善器件耐压特性。
请参阅图1，作为本发明提供的常关型氧化镓场效应晶体管结构的一种具体实施方式，所述源极3和所述漏极5通过离子注入和高温退火形成欧姆接触，或者通过高温合金形成欧姆接触。
请参阅图1，作为本发明提供的常关型氧化镓场效应晶体管结构的一种具体实施方式，所述源极3与所述n型掺杂氧化镓沟道层、所述漏极5与所述n型掺杂氧化镓沟道层，至少有一个为肖特基接触。
参见图2，作为本发明提供的常关型氧化镓场效应晶体管结构的一种具体实施方式，所述的常关型氧化镓场效应晶体管结构还包括场板，所述场板为源场板、栅场板9和漏场板，或者为其中的任意一个，或者为其中的任意两个。
参见图2，作为本发明提供的常关型氧化镓场效应晶体管结构的一种具体实施方式，所述源场板、所述栅场板9和所述漏场板均至少具有一层。场板结构有利于抑制器件沟道尖峰电场，改善器件耐压特性。
参见图2，作为本发明提供的常关型氧化镓场效应晶体管结构的一种具体实施方式，所述n型掺杂氧化镓沟道层与所述栅极4之间设有栅介质层7。
参见图2，作为本发明提供的常关型氧化镓场效应晶体管结构的一种具体实施方式，所述源极3和所述栅极4之间、所述漏极5和所述栅极4之间具有钝化层8。
参见图2，作为本发明提供的常关型氧化镓场效应晶体管结构的一种具体实施方式，所述钝化层8为一层绝缘介质或者多层绝缘介质。
本发明还提供一种常关型氧化镓场效应晶体管结构的制备方法，包括：
在n型掺杂氧化镓沟道层上淀积掩膜层，所述掩膜层为金属或者绝缘介质；
利用光刻、显影、干法刻蚀或者湿法腐蚀方法去除待制作的无电子沟道区6上方的掩膜层；
在氧气氛围进行高温退火，形成无电子沟道区6。
其中，所述高温退火温度为300℃-1300℃，高温退火时间≥30s。
本发明提供的制备方法，不需要干法刻蚀工艺，避免了刻蚀导致的表面粗糙、材料损伤和刻蚀不均匀等问题，有利于降低器件的漏电特性，提升器件的耐压特性和开关特性，同时能够提升器件阈值电压的均匀性，利于大规模生产。此外，高温退火能够修复掩膜区域的材料的缺陷，有望进一步提升器件性能。
以上所述仅为本发明的较佳实施例而已，并不用以限制本发明，凡在本发明的精神和原则之内所作的任何修改、等同替换和改进等，均应包含在本发明的保护范围之内。

Claims (7)

1.常关型氧化镓场效应晶体管结构，其特征在于，自下至上包括衬底层和n型掺杂氧化镓沟道层，所述n型掺杂氧化镓沟道层上设有源极、漏极和栅极，所述栅极位于所述源极和所述漏极之间，所述栅极下方的所述n型掺杂氧化镓沟道层内设有无电子沟道区；
所述的常关型氧化镓场效应晶体管结构的制备方法，包括：
在n型掺杂氧化镓沟道层上淀积掩膜层，所述掩膜层为金属或者绝缘介质；
利用光刻、显影、干法刻蚀或者湿法腐蚀方法去除待制作的无电子沟道区上方的掩膜层；
在氧气氛围进行高温退火，形成无电子沟道区；
所述高温退火温度为300℃-1300℃，高温退火时间≥30s；
所述无电子沟道区的长度小于等于所述栅极的长度；
所述无电子沟道区的数量为大于等于1的整数，所述栅极的数量为大于等于1的整数，且所述无电子沟道区均位于所述栅极的下方。
2.如权利要求1所述的常关型氧化镓场效应晶体管结构，其特征在于，所述衬底层为至少一层半导体材料、金属材料或者绝缘介质，其中，与所述n型掺杂氧化镓沟道层相连接的所述衬底层为绝缘介质层。
3.如权利要求1所述的常关型氧化镓场效应晶体管结构，其特征在于，所述n型掺杂氧化镓沟道层自下至上包括第一n型掺杂氧化镓沟道层和第二n型掺杂氧化镓沟道层，所述第一n型掺杂氧化镓沟道层和所述第二n型掺杂氧化镓沟道层的掺杂浓度不相等。
4.如权利要求1-3任一项所述的常关型氧化镓场效应晶体管结构，其特征在于，所述的常关型氧化镓场效应晶体管结构还包括场板，所述场板为源场板、栅场板和漏场板，或者为其中的任意一个，或者为其中的任意两个。
5.如权利要求4所述的常关型氧化镓场效应晶体管结构，其特征在于，所述n型掺杂氧化镓沟道层与所述栅极之间设有栅介质层。
6.如权利要求4所述的常关型氧化镓场效应晶体管结构，其特征在于，所述源极和所述栅极之间、所述漏极和所述栅极之间具有钝化层。
7.如权利要求6所述的常关型氧化镓场效应晶体管结构，其特征在于，所述钝化层为一层绝缘介质或者多层绝缘介质。
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