|
US4770977A
(en)
*
|
1984-09-21 |
1988-09-13 |
Commissariat A L'energie Atomique |
Silicon-containing polymer and its use as a masking resin in a lithography process
|
|
FR2570844B1
(fr)
*
|
1984-09-21 |
1986-11-14 |
Commissariat Energie Atomique |
Film photosensible a base de polymere silicie et son utilisation comme resine de masquage dans un procede de lithographie
|
|
DE3685766T2
(de)
*
|
1985-04-18 |
1993-02-11 |
Oki Electric Ind Co Ltd |
Photolackbildherstellungsverfahren.
|
|
US4663269A
(en)
*
|
1985-08-07 |
1987-05-05 |
Polytechnic Institute Of New York |
Method of forming highly sensitive photoresist film in the absence of water
|
|
US4929536A
(en)
*
|
1985-08-12 |
1990-05-29 |
Hoechst Celanese Corporation |
Image reversal negative working O-napthoquinone diazide and cross-linking compound containing photoresist process with thermal curing
|
|
US5217840A
(en)
*
|
1985-08-12 |
1993-06-08 |
Hoechst Celanese Corporation |
Image reversal negative working o-quinone diazide and cross-linking compound containing photoresist process with thermal curing treatment and element produced therefrom
|
|
US5256522A
(en)
*
|
1985-08-12 |
1993-10-26 |
Hoechst Celanese Corporation |
Image reversal negative working O-naphthoquinone diazide and cross-linking compound containing photoresist process with thermal curing
|
|
US4603101A
(en)
*
|
1985-09-27 |
1986-07-29 |
General Electric Company |
Photoresist compositions containing t-substituted organomethyl vinylaryl ether materials
|
|
US4665006A
(en)
*
|
1985-12-09 |
1987-05-12 |
International Business Machines Corporation |
Positive resist system having high resistance to oxygen reactive ion etching
|
|
US4657845A
(en)
*
|
1986-01-14 |
1987-04-14 |
International Business Machines Corporation |
Positive tone oxygen plasma developable photoresist
|
|
US4912018A
(en)
*
|
1986-02-24 |
1990-03-27 |
Hoechst Celanese Corporation |
High resolution photoresist based on imide containing polymers
|
|
US4837124A
(en)
*
|
1986-02-24 |
1989-06-06 |
Hoechst Celanese Corporation |
High resolution photoresist of imide containing polymers
|
|
US4968581A
(en)
*
|
1986-02-24 |
1990-11-06 |
Hoechst Celanese Corporation |
High resolution photoresist of imide containing polymers
|
|
US4897336A
(en)
*
|
1986-04-11 |
1990-01-30 |
Chien James C W |
Self-developing radiation sensitive resist with amorphous polymer having haloalkyl substitution derived from cycic ether
|
|
US4689289A
(en)
*
|
1986-04-30 |
1987-08-25 |
General Electric Company |
Block polymer compositions
|
|
EP0249139B2
(en)
*
|
1986-06-13 |
1998-03-11 |
MicroSi, Inc. (a Delaware corporation) |
Resist compositions and use
|
|
US5310619A
(en)
*
|
1986-06-13 |
1994-05-10 |
Microsi, Inc. |
Resist compositions comprising a phenolic resin, an acid forming onium salt and a tert-butyl ester or tert-butyl carbonate which is acid-cleavable
|
|
US5362607A
(en)
*
|
1986-06-13 |
1994-11-08 |
Microsi, Inc. |
Method for making a patterned resist substrate composite
|
|
JPS6336240A
(ja)
*
|
1986-07-28 |
1988-02-16 |
インターナシヨナル・ビジネス・マシーンズ・コーポレーシヨン |
レジスト構造の作成方法
|
|
US4939070A
(en)
*
|
1986-07-28 |
1990-07-03 |
Brunsvold William R |
Thermally stable photoresists with high sensitivity
|
|
EP0264908B1
(en)
*
|
1986-10-23 |
1996-03-20 |
International Business Machines Corporation |
High sensitivity resists having autodecomposition temperatures greater than about 160 C
|
|
US4931379A
(en)
*
|
1986-10-23 |
1990-06-05 |
International Business Machines Corporation |
High sensitivity resists having autodecomposition temperatures greater than about 160° C.
|
|
US4800152A
(en)
*
|
1987-03-16 |
1989-01-24 |
International Business Machines Corporation |
Negative resist compositions
|
|
US4965322A
(en)
*
|
1987-04-06 |
1990-10-23 |
Asahi Kasei Kogyo Kabushiki Kaisha |
Photosensitive and heat-sensitive polymers, process for producing the same and process for recording information using the same
|
|
US4775609A
(en)
*
|
1987-05-18 |
1988-10-04 |
Hoescht Celanese Corporation |
Image reversal
|
|
US4808511A
(en)
*
|
1987-05-19 |
1989-02-28 |
International Business Machines Corporation |
Vapor phase photoresist silylation process
|
|
US5081001A
(en)
*
|
1987-05-22 |
1992-01-14 |
Hoechst Celanese Corporation |
Blocked monomer and polymers therefrom for use as photoresists
|
|
US4962171A
(en)
*
|
1987-05-22 |
1990-10-09 |
Hoechst Celanese Corporation |
Blocked monomer and polymers therefrom for use as photoresists
|
|
US4810613A
(en)
*
|
1987-05-22 |
1989-03-07 |
Hoechst Celanese Corporation |
Blocked monomer and polymers therefrom for use as photoresists
|
|
DE3721741A1
(de)
*
|
1987-07-01 |
1989-01-12 |
Basf Ag |
Strahlungsempfindliches gemisch fuer lichtempfindliche beschichtungsmaterialien
|
|
EP0307353A3
(de)
*
|
1987-09-07 |
1990-09-12 |
Ciba-Geigy Ag |
Organometallhaltige Polymere und deren Verwendung
|
|
US4916247A
(en)
*
|
1987-09-07 |
1990-04-10 |
Ciba-Geigy Corporation |
Organometal-containing compounds
|
|
DE3821585A1
(de)
*
|
1987-09-13 |
1989-03-23 |
Hoechst Ag |
Positiv arbeitendes strahlungsempfindliches gemisch und daraus hergestelltes strahlungsempfindliches aufzeichnungsmaterial fuer hochenergetische strahlung
|
|
US4824758A
(en)
*
|
1988-01-25 |
1989-04-25 |
Hoechst Celanese Corp |
Photoresist compositions based on acetoxystyrene copolymers
|
|
US4996136A
(en)
*
|
1988-02-25 |
1991-02-26 |
At&T Bell Laboratories |
Radiation sensitive materials and devices made therewith
|
|
JP2540199B2
(ja)
*
|
1988-02-25 |
1996-10-02 |
アメリカン テレフォン アンド テレグラフ カムパニー |
デバイスの製造方法
|
|
DE3812325A1
(de)
*
|
1988-04-14 |
1989-10-26 |
Basf Ag |
Strahlungsempfindliches gemisch fuer lichtempfindliche beschichtungsmaterialien und verfahren zur herstellung von reliefmustern und reliefbildern
|
|
DE3817009A1
(de)
*
|
1988-05-19 |
1989-11-30 |
Basf Ag |
Strahlungsempfindliches gemisch und verfahren zur herstellung von reliefmustern
|
|
DE3817011A1
(de)
*
|
1988-05-19 |
1989-11-30 |
Basf Ag |
Strahlungsempfindliches gemisch und verfahren zur herstellung von reliefmustern
|
|
DE3817010A1
(de)
*
|
1988-05-19 |
1989-11-30 |
Basf Ag |
Strahlungsempfindliches gemisch und verfahren zur herstellung von reliefmustern
|
|
US5290666A
(en)
*
|
1988-08-01 |
1994-03-01 |
Hitachi, Ltd. |
Method of forming a positive photoresist pattern utilizing contrast enhancement overlayer containing trifluoromethanesulfonic, methanesulfonic or trifluoromethaneacetic aromatic diazonium salt
|
|
JP2768692B2
(ja)
*
|
1988-08-01 |
1998-06-25 |
株式会社日立製作所 |
感放射線組成物及びパターン形成方法
|
|
DE68926019T2
(de)
*
|
1988-10-28 |
1996-10-02 |
Ibm |
Positiv arbeitende hochempfindliche Photolack-Zusammensetzung
|
|
US6051659A
(en)
*
|
1992-08-20 |
2000-04-18 |
International Business Machines Corporation |
Highly sensitive positive photoresist composition
|
|
DE3837438A1
(de)
*
|
1988-11-04 |
1990-05-10 |
Basf Ag |
Strahlungsempfindliches gemisch
|
|
DE3837513A1
(de)
*
|
1988-11-04 |
1990-05-10 |
Basf Ag |
Strahlungsempfindliches gemisch
|
|
DE3902115A1
(de)
*
|
1989-01-25 |
1990-08-02 |
Basf Ag |
Strahlungsempfindliche polymere
|
|
DE3907953A1
(de)
*
|
1989-03-11 |
1990-09-13 |
Hoechst Ag |
Strahlungshaertbares gemisch und daraus hergestelltes strahlungsempfindliches aufzeichnungsmaterial fuer hochenergetische strahlung
|
|
DE69027799T2
(de)
*
|
1989-03-14 |
1997-01-23 |
Ibm |
Chemisch amplifizierter Photolack
|
|
JP2661671B2
(ja)
*
|
1989-03-20 |
1997-10-08 |
株式会社日立製作所 |
パタン形成材料とそれを用いたパタン形成方法
|
|
US5391465A
(en)
*
|
1989-06-20 |
1995-02-21 |
Rohm And Haas Company |
Method of using selected photoactive compounds in high resolution, acid hardening photoresists with near ultraviolet radiation wherein the photoresist comprise conventional deep UV photoacid generators
|
|
EP0410606B1
(en)
|
1989-07-12 |
1996-11-13 |
Fuji Photo Film Co., Ltd. |
Siloxane polymers and positive working light-sensitive compositions comprising the same
|
|
DE3924298A1
(de)
*
|
1989-07-22 |
1991-02-07 |
Basf Ag |
Neue sulfoniumsalze und deren verwendung
|
|
US5220037A
(en)
*
|
1989-07-22 |
1993-06-15 |
Basf Aktiengesellschaft |
Sulfonium salts and use thereof
|
|
DE3927632A1
(de)
*
|
1989-08-22 |
1991-02-28 |
Basf Ag |
Umsetzungsprodukt, verfahren zu dessen herstellung und damit erhaltenes strahlungsempfindliches material
|
|
DE3930086A1
(de)
*
|
1989-09-09 |
1991-03-21 |
Hoechst Ag |
Positiv arbeitendes strahlungsempfindliches gemisch und daraus hergestelltes strahlungsempfindliches aufzeichnungsmaterial
|
|
DE3930087A1
(de)
*
|
1989-09-09 |
1991-03-14 |
Hoechst Ag |
Positiv arbeitendes strahlungsempfindliches gemisch und daraus hergestelltes strahlungsempfindliches aufzeichnungsmaterial
|
|
DE3930584A1
(de)
*
|
1989-09-13 |
1991-03-14 |
Basf Ag |
Auf elektrophotographischem wege hergestellte offsetdruckplatte mit hydrophilen betonerten bereichen und oleophilen unbetonerten bereichen
|
|
DE3935875A1
(de)
*
|
1989-10-27 |
1991-05-02 |
Basf Ag |
Strahlungsempfindliches gemisch und verfahren zur herstellung von reliefmustern
|
|
US5023164A
(en)
*
|
1989-10-23 |
1991-06-11 |
International Business Machines Corporation |
Highly sensitive dry developable deep UV photoresist
|
|
DE3940965A1
(de)
*
|
1989-12-12 |
1991-06-13 |
Basf Ag |
Strahlungsempfindliches gemisch und verfahren zur herstellung von reliefstrukturen
|
|
EP0468002A4
(en)
*
|
1989-12-15 |
1995-08-09 |
Grace W R & Co |
Autodeposition emulsion for selectively protecting metallic surfaces
|
|
DE69125634T2
(de)
*
|
1990-01-30 |
1998-01-02 |
Wako Pure Chem Ind Ltd |
Chemisch verstärktes Photolack-Material
|
|
US5216135A
(en)
|
1990-01-30 |
1993-06-01 |
Wako Pure Chemical Industries, Ltd. |
Diazodisulfones
|
|
JPH03223858A
(ja)
*
|
1990-01-30 |
1991-10-02 |
Matsushita Electric Ind Co Ltd |
パターン形成方法
|
|
DE4005212A1
(de)
*
|
1990-02-20 |
1991-08-22 |
Basf Ag |
Strahlungsempfindliches gemisch
|
|
DE4007924A1
(de)
*
|
1990-03-13 |
1991-09-19 |
Basf Ag |
Strahlungsempfindliches gemisch
|
|
JP2661317B2
(ja)
*
|
1990-03-27 |
1997-10-08 |
松下電器産業株式会社 |
パターン形成方法
|
|
JP2632066B2
(ja)
*
|
1990-04-06 |
1997-07-16 |
富士写真フイルム株式会社 |
ポジ画像の形成方法
|
|
US5212047A
(en)
*
|
1990-04-10 |
1993-05-18 |
E. I. Du Pont De Nemours And Company |
Resist material and process for use
|
|
US5077174A
(en)
*
|
1990-04-10 |
1991-12-31 |
E. I. Du Pont De Nemours And Company |
Positive working dry film element having a layer of resist composition
|
|
US5206317A
(en)
*
|
1990-04-10 |
1993-04-27 |
E. I. Du Pont De Nemours And Company |
Resist material and process for use
|
|
US5120633A
(en)
*
|
1990-04-10 |
1992-06-09 |
E. I. Du Pont De Nemours And Company |
Resist material for use in thick film resists
|
|
US4985332A
(en)
*
|
1990-04-10 |
1991-01-15 |
E. I. Du Pont De Nemours And Company |
Resist material with carbazole diazonium salt acid generator and process for use
|
|
US5145764A
(en)
*
|
1990-04-10 |
1992-09-08 |
E. I. Du Pont De Nemours And Company |
Positive working resist compositions process of exposing, stripping developing
|
|
US5262281A
(en)
*
|
1990-04-10 |
1993-11-16 |
E. I. Du Pont De Nemours And Company |
Resist material for use in thick film resists
|
|
US5120629A
(en)
*
|
1990-04-10 |
1992-06-09 |
E. I. Du Pont De Nemours And Company |
Positive-working photosensitive electrostatic master
|
|
US5219711A
(en)
*
|
1990-04-10 |
1993-06-15 |
E. I. Du Pont De Nemours And Company |
Positive image formation utilizing resist material with carbazole diazonium salt acid generator
|
|
US5252427A
(en)
*
|
1990-04-10 |
1993-10-12 |
E. I. Du Pont De Nemours And Company |
Positive photoresist compositions
|
|
EP0451311B1
(de)
*
|
1990-04-12 |
1999-03-10 |
Siemens Aktiengesellschaft |
Verfahren zur Erzeugung einer Resiststruktur
|
|
JP2648804B2
(ja)
*
|
1990-04-24 |
1997-09-03 |
インターナショナル・ビジネス・マシーンズ・コーポレイション |
ドライフィルム型の水性処理可能なホトレジスト組成物
|
|
US5045431A
(en)
*
|
1990-04-24 |
1991-09-03 |
International Business Machines Corporation |
Dry film, aqueous processable photoresist compositions
|
|
JP2648805B2
(ja)
*
|
1990-04-24 |
1997-09-03 |
インターナショナル・ビジネス・マシーンズ・コーポレイション |
液体適用型の水性処理可能なホトレジスト組成物
|
|
DE59010396D1
(de)
*
|
1990-04-27 |
1996-08-01 |
Siemens Ag |
Verfahren zur Erzeugung einer Resiststruktur
|
|
JP2645384B2
(ja)
*
|
1990-05-21 |
1997-08-25 |
日本ペイント株式会社 |
ポジ型感光性樹脂組成物
|
|
KR950002874B1
(ko)
*
|
1990-06-25 |
1995-03-27 |
마쯔시다덴시고오교오 가부시기가이샤 |
광 또는 방사선감응성 조성물과 패턴형성방법과 포토마스크의 제조방법 및 반도체
|
|
DE69130594T2
(de)
*
|
1990-06-29 |
1999-05-06 |
Fujitsu Ltd |
Verfahren zur Erzeugung eines Musters
|
|
US5066566A
(en)
*
|
1990-07-31 |
1991-11-19 |
At&T Bell Laboratories |
Resist materials
|
|
JPH0488346A
(ja)
*
|
1990-07-31 |
1992-03-23 |
Nippon Paint Co Ltd |
レジスト組成物
|
|
US5229244A
(en)
*
|
1990-08-08 |
1993-07-20 |
E. I. Du Pont De Nemours And Company |
Dry processible photosensitive composition including photo-acid generator and optically clear polymer (co-polymer) blend that becomes tacky upon exposure to actinic radiation
|
|
EP0476865A1
(en)
*
|
1990-08-31 |
1992-03-25 |
Wako Pure Chemical Industries Ltd |
Resist material and process for forming pattern using the same
|
|
KR920008537A
(ko)
*
|
1990-10-19 |
1992-05-28 |
원본미기재 |
내식막 조성물
|
|
JPH04158363A
(ja)
*
|
1990-10-22 |
1992-06-01 |
Mitsubishi Electric Corp |
パターン形成用レジスト材料
|
|
US5082965A
(en)
*
|
1990-10-29 |
1992-01-21 |
E. I. Du Pont De Nemours And Company |
Process for preparation of alkoxycarbonyloxystyrene
|
|
US5256809A
(en)
*
|
1990-11-16 |
1993-10-26 |
Hoechst Celanese Corporation |
Method for preparing a salt of 4-hydroxystyrene and for preparing 4-tertiary-butoxycarbonyloxystyrene therefrom
|
|
US5241098A
(en)
*
|
1990-11-16 |
1993-08-31 |
Hoechst Celanese Corporation |
Method for preparing a salt of 4-hydroxystyrene and for preparing 4-tertiary-butoxycarbonyloxystyrene therefrom
|
|
US5304690A
(en)
*
|
1990-11-16 |
1994-04-19 |
Hoechst Celanese Corporation |
Process for the preparation of salts of 4-hydroxystyrene
|
|
JPH04184345A
(ja)
*
|
1990-11-19 |
1992-07-01 |
Fujitsu Ltd |
レジストパターンの形成方法
|
|
JP3031421B2
(ja)
*
|
1990-11-28 |
2000-04-10 |
信越化学工業株式会社 |
化学増幅ポジ型レジスト材
|
|
EP0492255B1
(de)
*
|
1990-12-20 |
1995-09-20 |
Siemens Aktiengesellschaft |
Mischpolymere
|
|
DE59108086D1
(de)
*
|
1990-12-20 |
1996-09-19 |
Siemens Ag |
Photoresist
|
|
ES2090218T3
(es)
*
|
1990-12-20 |
1996-10-16 |
Siemens Ag |
Generacion estructural fotolitografica.
|
|
ES2101710T3
(es)
*
|
1990-12-20 |
1997-07-16 |
Siemens Ag |
Procedimiento fotolitografico.
|
|
JP2968349B2
(ja)
*
|
1991-02-01 |
1999-10-25 |
日本ペイント株式会社 |
多色表示装置の製造方法
|
|
JPH04253939A
(ja)
*
|
1991-02-05 |
1992-09-09 |
Shin Etsu Chem Co Ltd |
パラ第三級ブトキシカルボニルオキシスチレンの合成方法
|
|
US5219788A
(en)
*
|
1991-02-25 |
1993-06-15 |
Ibm Corporation |
Bilayer metallization cap for photolithography
|
|
US5851736A
(en)
*
|
1991-03-05 |
1998-12-22 |
Nitto Denko Corporation |
Heat-resistant photoresist composition, photosensitive substrate, and process for forming heat-resistant positive or negative pattern
|
|
DE4214363C2
(de)
*
|
1991-04-30 |
1998-01-29 |
Toshiba Kawasaki Kk |
Strahlungsempfindliches Gemisch zur Ausbildung von Mustern
|
|
JP2707164B2
(ja)
*
|
1991-05-28 |
1998-01-28 |
信越化学工業株式会社 |
レジスト材
|
|
JPH04350657A
(ja)
*
|
1991-05-28 |
1992-12-04 |
Shin Etsu Chem Co Ltd |
レジスト材
|
|
JPH04359906A
(ja)
*
|
1991-06-07 |
1992-12-14 |
Shin Etsu Chem Co Ltd |
ポリ（パラ−ｔ−ブトキシカルボニルオキシスチレン）及びその製造方法
|
|
JP3030672B2
(ja)
*
|
1991-06-18 |
2000-04-10 |
和光純薬工業株式会社 |
新規なレジスト材料及びパタ−ン形成方法
|
|
DE4120172A1
(de)
*
|
1991-06-19 |
1992-12-24 |
Hoechst Ag |
Strahlungsempfindliches gemisch, das als bindemittel neue polymere mit einheiten aus amiden von (alpha),(beta)-ungesaettigten carbonsaeuren enthaelt
|
|
JP2655369B2
(ja)
*
|
1991-06-28 |
1997-09-17 |
富士写真フイルム株式会社 |
感光性組成物
|
|
DE4124028A1
(de)
*
|
1991-07-19 |
1993-01-21 |
Hoechst Ag |
Verfahren zur herstellung von n-tert.-butoxycarbonyl-maleimid
|
|
DE4124029A1
(de)
*
|
1991-07-19 |
1993-01-21 |
Hoechst Ag |
Verfahren zur herstellung von tert.-butyloxycarbonyl-gruppen tragenden organischen verbindungen
|
|
EP0524759A1
(en)
*
|
1991-07-23 |
1993-01-27 |
AT&T Corp. |
Device fabrication process
|
|
US5250395A
(en)
*
|
1991-07-25 |
1993-10-05 |
International Business Machines Corporation |
Process for imaging of photoresist including treatment of the photoresist with an organometallic compound
|
|
DE4126409A1
(de)
*
|
1991-08-09 |
1993-02-11 |
Hoechst Ag |
Strahlungsempfindliches gemisch mit einem polymeren bindemittel mit einheiten aus (alpha)-(beta)-ungesaettigten carbonsaeuren
|
|
US5506088A
(en)
*
|
1991-09-17 |
1996-04-09 |
Fujitsu Limited |
Chemically amplified resist composition and process for forming resist pattern using same
|
|
US5258257A
(en)
*
|
1991-09-23 |
1993-11-02 |
Shipley Company Inc. |
Radiation sensitive compositions comprising polymer having acid labile groups
|
|
US5439582A
(en)
*
|
1991-10-02 |
1995-08-08 |
Nippon Paint Co., Ltd. |
Process for producing multicolor display
|
|
EP0537524A1
(en)
*
|
1991-10-17 |
1993-04-21 |
Shipley Company Inc. |
Radiation sensitive compositions and methods
|
|
JP2964107B2
(ja)
*
|
1991-11-11 |
1999-10-18 |
日本電信電話株式会社 |
ポジ型レジスト材料
|
|
US5229256A
(en)
*
|
1991-12-06 |
1993-07-20 |
International Business Machines Corporation |
Process for generating positive-tone photoresist image
|
|
DE69218393T2
(de)
*
|
1991-12-16 |
1997-10-16 |
Wako Pure Chem Ind Ltd |
Resistmaterial
|
|
DE4202845A1
(de)
*
|
1992-01-31 |
1993-08-05 |
Basf Ag |
Strahlungsempfindliches gemisch
|
|
US5342734A
(en)
*
|
1992-02-25 |
1994-08-30 |
Morton International, Inc. |
Deep UV sensitive photoresist resistant to latent image decay
|
|
JP2694097B2
(ja)
*
|
1992-03-03 |
1997-12-24 |
インターナショナル・ビジネス・マシーンズ・コーポレイション |
反射防止コーティング組成物
|
|
JP2559192B2
(ja)
*
|
1992-04-07 |
1996-12-04 |
インターナショナル・ビジネス・マシーンズ・コーポレイション |
ヒドロキシ芳香族化合物の炭酸化物を生成させるための改良された方法
|
|
TW304235B
(US06749988-20040615-C00017.png)
*
|
1992-04-29 |
1997-05-01 |
Ocg Microelectronic Materials |
|
|
US5550004A
(en)
*
|
1992-05-06 |
1996-08-27 |
Ocg Microelectronic Materials, Inc. |
Chemically amplified radiation-sensitive composition
|
|
US5384229A
(en)
*
|
1992-05-07 |
1995-01-24 |
Shipley Company Inc. |
Photoimageable compositions for electrodeposition
|
|
US5587274A
(en)
*
|
1992-06-19 |
1996-12-24 |
Nippon Paint Co., Ltd. |
Resist composition
|
|
JP3202792B2
(ja)
*
|
1992-06-19 |
2001-08-27 |
日本ペイント株式会社 |
レジスト組成物
|
|
US6111133A
(en)
*
|
1992-09-23 |
2000-08-29 |
Lucent Technologies Inc. |
Process for preparing substituted styrenes
|
|
US5319142A
(en)
*
|
1992-10-06 |
1994-06-07 |
Hoechst Celanese Corporation |
Process for preparing substituted and unsubstituted arylalkylamines
|
|
US5480748A
(en)
*
|
1992-10-21 |
1996-01-02 |
International Business Machines Corporation |
Protection of aluminum metallization against chemical attack during photoresist development
|
|
EP0698230A1
(en)
*
|
1992-10-29 |
1996-02-28 |
International Business Machines Corporation |
Chemically amplified photoresist
|
|
JP2688168B2
(ja)
|
1992-11-03 |
1997-12-08 |
インターナショナル・ビジネス・マシーンズ・コーポレイション |
フォトレジストイメージ形成プロセス
|
|
EP0605089B1
(en)
*
|
1992-11-03 |
1999-01-07 |
International Business Machines Corporation |
Photoresist composition
|
|
JP2654339B2
(ja)
*
|
1992-11-24 |
1997-09-17 |
インターナショナル・ビジネス・マシーンズ・コーポレイション |
感光性レジスト組成物及び基板上にレジスト像を形成する方法
|
|
US5395734A
(en)
*
|
1992-11-30 |
1995-03-07 |
Minnesota Mining And Manufacturing Company |
Shoot and run printing materials
|
|
EP0601974B1
(de)
*
|
1992-12-04 |
1997-05-28 |
OCG Microelectronic Materials Inc. |
Positiv-Photoresist mit verbesserten Prozesseigenschaften
|
|
DE4242050A1
(de)
*
|
1992-12-14 |
1994-06-16 |
Hoechst Ag |
Polymere mit N,N-disubstituierten Sulfonamid-Seitengruppen und deren Verwendung
|
|
DE4242051A1
(de)
*
|
1992-12-14 |
1994-06-16 |
Hoechst Ag |
N,N-Disubstituierte Sulfonamide und damit hergestelltes strahlungsempfindliches Gemisch
|
|
US5372912A
(en)
*
|
1992-12-31 |
1994-12-13 |
International Business Machines Corporation |
Radiation-sensitive resist composition and process for its use
|
|
JPH06214395A
(ja)
*
|
1993-01-18 |
1994-08-05 |
Sumitomo Chem Co Ltd |
ポジ型フォトレジスト組成物
|
|
EP0608983B1
(en)
*
|
1993-01-25 |
1997-11-12 |
AT&T Corp. |
A process for controlled deprotection of polymers and a process for fabricating a device utilizing partially deprotected resist polymers
|
|
KR100355254B1
(en)
*
|
1993-02-15 |
2003-03-31 |
Clariant Finance Bvi Ltd |
Positive type radiation-sensitive mixture
|
|
US5314782A
(en)
*
|
1993-03-05 |
1994-05-24 |
Morton International, Inc. |
Deep UV sensitive resistant to latent image decay comprising a diazonaphthoquinone sulfonate of a nitrobenzyl derivative
|
|
US5308744A
(en)
*
|
1993-03-05 |
1994-05-03 |
Morton International, Inc. |
Source of photochemically generated acids from diazonaphthoquinone sulfonates of nitrobenzyl derivatives
|
|
US5496678A
(en)
*
|
1993-04-16 |
1996-03-05 |
Kansai Paint Co., Ltd. |
Photosensitive compositions containing a polymer with carboxyl and hydroxyphenyl groups, a compound with multiple ethylenic unsaturation and a photo-acid generator
|
|
JP3339157B2
(ja)
*
|
1993-05-31 |
2002-10-28 |
ソニー株式会社 |
感光性組成物及びパターン形成方法
|
|
JPH07140666A
(ja)
*
|
1993-06-04 |
1995-06-02 |
Internatl Business Mach Corp <Ibm> |
マイクロリトグラフィックレジスト組成物、酸不安定化合物、マイクロリトグラフィックレリーフ画像形成方法及び酸感知性ポリマー組成物
|
|
JP3297199B2
(ja)
*
|
1993-09-14 |
2002-07-02 |
株式会社東芝 |
レジスト組成物
|
|
US5744281A
(en)
*
|
1993-09-14 |
1998-04-28 |
Kabushiki Kaisha Toshiba |
Resist composition for forming a pattern and method of forming a pattern wherein the composition 4-phenylpyridine as an additive
|
|
JP3353258B2
(ja)
*
|
1993-10-26 |
2002-12-03 |
富士通株式会社 |
遠紫外線用レジスト
|
|
US5688628A
(en)
*
|
1993-11-11 |
1997-11-18 |
Nippon Zeon Co., Ltd. |
Resist composition
|
|
DE69425862T2
(de)
*
|
1993-11-17 |
2001-05-03 |
At & T Corp |
Verfahren zur Herstellung einer Vorrichtung unter Benutzung einer lichtempfindlichen Zusammensetzung
|
|
JP3203995B2
(ja)
*
|
1993-12-24 |
2001-09-04 |
ジェイエスアール株式会社 |
感放射線性樹脂組成物
|
|
JP3271728B2
(ja)
*
|
1994-02-14 |
2002-04-08 |
日本電信電話株式会社 |
ポジ型レジスト組成物
|
|
US5486267A
(en)
*
|
1994-02-28 |
1996-01-23 |
International Business Machines Corporation |
Method for applying photoresist
|
|
US5597868A
(en)
*
|
1994-03-04 |
1997-01-28 |
Massachusetts Institute Of Technology |
Polymeric anti-reflective compounds
|
|
US5663035A
(en)
*
|
1994-04-13 |
1997-09-02 |
Hoechst Japan Limited |
Radiation-sensitive mixture comprising a basic iodonium compound
|
|
US5736296A
(en)
*
|
1994-04-25 |
1998-04-07 |
Tokyo Ohka Kogyo Co., Ltd. |
Positive resist composition comprising a mixture of two polyhydroxystyrenes having different acid cleavable groups and an acid generating compound
|
|
DE4414897A1
(de)
*
|
1994-04-28 |
1995-11-02 |
Hoechst Ag |
Aromatische Diazoniumsalze und deren Verwendung in strahlungsempfindlichen Gemischen
|
|
DE4414896A1
(de)
*
|
1994-04-28 |
1995-11-02 |
Hoechst Ag |
Positiv arbeitendes strahlungempfindliches Gemisch
|
|
CN1149341A
(zh)
*
|
1994-05-25 |
1997-05-07 |
西门子公司 |
可干法显影的正性抗蚀剂
|
|
US5580694A
(en)
|
1994-06-27 |
1996-12-03 |
International Business Machines Corporation |
Photoresist composition with androstane and process for its use
|
|
US5561216A
(en)
*
|
1994-07-01 |
1996-10-01 |
University Of North Carolina At Chapel Hill |
Late transition metal catalysts for the CO- and terpolymerization of olefin and alkyne monomers with carbon monoxide
|
|
US5558971A
(en)
|
1994-09-02 |
1996-09-24 |
Wako Pure Chemical Industries, Ltd. |
Resist material
|
|
EP0781424B1
(de)
*
|
1994-09-12 |
1998-11-18 |
Siemens Aktiengesellschaft |
Photolithographische strukturerzeugung
|
|
US6010826A
(en)
*
|
1994-10-13 |
2000-01-04 |
Nippon Zeon Co., Ltd. |
Resist composition
|
|
JPH08110638A
(ja)
|
1994-10-13 |
1996-04-30 |
Hitachi Chem Co Ltd |
感光性樹脂組成物およびレジスト像の製造法
|
|
JP3585277B2
(ja)
*
|
1994-12-05 |
2004-11-04 |
本州化学工業株式会社 |
スチレン誘導体の製造方法
|
|
JP3198845B2
(ja)
*
|
1994-12-05 |
2001-08-13 |
信越化学工業株式会社 |
化学増幅ポジ型レジスト材料
|
|
US5663036A
(en)
*
|
1994-12-13 |
1997-09-02 |
International Business Machines Corporation |
Microlithographic structure with an underlayer film comprising a thermolyzed azide
|
|
DE4444669A1
(de)
*
|
1994-12-15 |
1996-06-20 |
Hoechst Ag |
Strahlungsempfindliches Gemisch
|
|
JP3277114B2
(ja)
*
|
1995-02-17 |
2002-04-22 |
インターナショナル・ビジネス・マシーンズ・コーポレーション |
陰画調レジスト像の作製方法
|
|
KR100293130B1
(ko)
*
|
1995-04-12 |
2001-09-17 |
카나가와 치히로 |
고분자화합물및화학증폭포지티브형레지스트재료
|
|
JPH0954437A
(ja)
|
1995-06-05 |
1997-02-25 |
Fuji Photo Film Co Ltd |
化学増幅型ポジレジスト組成物
|
|
JP3046225B2
(ja)
*
|
1995-06-15 |
2000-05-29 |
東京応化工業株式会社 |
ポジ型レジスト膜形成用塗布液
|
|
US5922810A
(en)
*
|
1995-07-31 |
1999-07-13 |
Fmc Corporation |
Deprotection of protected functional polymers
|
|
KR0178475B1
(ko)
*
|
1995-09-14 |
1999-03-20 |
윤덕용 |
신규한 n-비닐락탐 유도체 및 그의 중합체
|
|
US5863699A
(en)
*
|
1995-10-12 |
1999-01-26 |
Kabushiki Kaisha Toshiba |
Photo-sensitive composition
|
|
US6391512B1
(en)
*
|
1995-10-20 |
2002-05-21 |
Konica Corporation |
Image forming material and image forming method
|
|
JP3073149B2
(ja)
*
|
1995-10-30 |
2000-08-07 |
東京応化工業株式会社 |
ポジ型レジスト組成物
|
|
TW477913B
(en)
*
|
1995-11-02 |
2002-03-01 |
Shinetsu Chemical Co |
Sulfonium salts and chemically amplified positive resist compositions
|
|
KR100191126B1
(ko)
|
1995-11-28 |
1999-06-15 |
윤덕용 |
비닐4-t-부톡시카르보닐옥시벤잘-비닐 알코올-비닐 아세테이트 공중합체와 비닐 4-t-부톡시카르보닐옥시벤잘-비닐 4-히드록시벤잘-비닐 알코올-비닐 아세테이트 공중합체 및 그들의 제조방법
|
|
US6165673A
(en)
*
|
1995-12-01 |
2000-12-26 |
International Business Machines Corporation |
Resist composition with radiation sensitive acid generator
|
|
US5585220A
(en)
*
|
1995-12-01 |
1996-12-17 |
International Business Machines Corporation |
Resist composition with radiation sensitive acid generator
|
|
US5879856A
(en)
|
1995-12-05 |
1999-03-09 |
Shipley Company, L.L.C. |
Chemically amplified positive photoresists
|
|
EP0780732B1
(en)
|
1995-12-21 |
2003-07-09 |
Wako Pure Chemical Industries Ltd |
Polymer composition and resist material
|
|
EP0877294A4
(en)
|
1996-01-26 |
1999-09-29 |
Nippon Zeon Co |
COMPOSITION OF RESIST
|
|
EP0789279B2
(en)
|
1996-02-09 |
2004-12-08 |
Wako Pure Chemical Industries Ltd |
Polymer and resist material
|
|
KR100536824B1
(ko)
*
|
1996-03-07 |
2006-03-09 |
스미토모 베이클라이트 가부시키가이샤 |
산불안정성펜던트기를지닌다중고리중합체를포함하는포토레지스트조성물
|
|
US6232417B1
(en)
|
1996-03-07 |
2001-05-15 |
The B. F. Goodrich Company |
Photoresist compositions comprising polycyclic polymers with acid labile pendant groups
|
|
DE69706288T2
(de)
*
|
1996-03-07 |
2002-05-16 |
Clariant Finance Bvi Ltd |
Antireflexions-unterbeschichtungen durch brechungsindexmodifikation mit anomaler dispersion
|
|
TW337591B
(en)
*
|
1996-04-15 |
1998-08-01 |
Shinetsu Chem Ind Co |
Anti-reflection coating material
|
|
KR0183901B1
(ko)
*
|
1996-07-03 |
1999-04-01 |
삼성전자 주식회사 |
레지스트 조성물
|
|
JP3808140B2
(ja)
*
|
1996-09-10 |
2006-08-09 |
Ａｚエレクトロニックマテリアルズ株式会社 |
新規酸感応性基で保護されたヒドロキシスチレン重合体およびこれらを含む放射線感応性材料
|
|
US6090526A
(en)
*
|
1996-09-13 |
2000-07-18 |
Shipley Company, L.L.C. |
Polymers and photoresist compositions
|
|
US5876899A
(en)
*
|
1996-09-18 |
1999-03-02 |
Shipley Company, L.L.C. |
Photoresist compositions
|
|
US5733714A
(en)
*
|
1996-09-30 |
1998-03-31 |
Clariant Finance (Bvi) Limited |
Antireflective coating for photoresist compositions
|
|
JP3297324B2
(ja)
*
|
1996-10-30 |
2002-07-02 |
富士通株式会社 |
レジスト組成物、レジストパターンの形成方法及び半導体装置の製造方法
|
|
KR100220951B1
(ko)
*
|
1996-12-20 |
1999-09-15 |
김영환 |
비닐 4-테트라히드로피라닐옥시벤잘-비닐 4-히드록시벤잘-비닐 테트라히드로피라닐에테르-비닐 아세테이트 공중합체, 비닐 4-테트라히드로피라닐옥시벤잘-비닐 테트라히드로피라닐에테르-비닐 아세테이트 공중합체 및 그들의 제조방법
|
|
KR100197673B1
(en)
*
|
1996-12-20 |
1999-06-15 |
Hyundai Electronics Ind |
Copolymers containing n-vinyllactam derivatives, preparation methods thereof and photoresists therefrom
|
|
KR100211548B1
(ko)
*
|
1996-12-20 |
1999-08-02 |
김영환 |
원자외선용 감광막 공중합체 및 그 제조방법
|
|
KR100265597B1
(ko)
*
|
1996-12-30 |
2000-09-15 |
김영환 |
Arf 감광막 수지 및 그 제조방법
|
|
US6808859B1
(en)
*
|
1996-12-31 |
2004-10-26 |
Hyundai Electronics Industries Co., Ltd. |
ArF photoresist copolymers
|
|
KR100225956B1
(ko)
*
|
1997-01-10 |
1999-10-15 |
김영환 |
아민을 도입한 에이알에프 감광막 수지
|
|
US6103445A
(en)
*
|
1997-03-07 |
2000-08-15 |
Board Of Regents, The University Of Texas System |
Photoresist compositions comprising norbornene derivative polymers with acid labile groups
|
|
US6117345A
(en)
|
1997-04-02 |
2000-09-12 |
United Microelectronics Corp. |
High density plasma chemical vapor deposition process
|
|
US5994430A
(en)
*
|
1997-04-30 |
1999-11-30 |
Clariant Finance Bvi) Limited |
Antireflective coating compositions for photoresist compositions and use thereof
|
|
US5981145A
(en)
*
|
1997-04-30 |
1999-11-09 |
Clariant Finance (Bvi) Limited |
Light absorbing polymers
|
|
US5958654A
(en)
*
|
1997-08-25 |
1999-09-28 |
Lucent Technologies Inc. |
Lithographic process and energy-sensitive material for use therein
|
|
US7026093B2
(en)
*
|
1997-08-28 |
2006-04-11 |
Shipley Company, L.L.C. |
Photoresist compositions
|
|
US7482107B2
(en)
*
|
1997-08-28 |
2009-01-27 |
Shipley Company, L.L.C. |
Photoresist composition
|
|
US6077643A
(en)
*
|
1997-08-28 |
2000-06-20 |
Shipley Company, L.L.C. |
Polymers and photoresist compositions
|
|
KR100489576B1
(ko)
*
|
1997-10-08 |
2005-12-21 |
신에쓰 가가꾸 고교 가부시끼가이샤 |
레지스트 재료 및 패턴 형성 방법
|
|
KR19990036901A
(ko)
|
1997-10-08 |
1999-05-25 |
카나가와 치히로 |
폴리스티렌계 고분자 화합물, 화학증폭 포지티브형 레지스트 재료 및 패턴 형성 방법
|
|
KR100252546B1
(ko)
*
|
1997-11-01 |
2000-04-15 |
김영환 |
공중합체 수지와 포토레지스트 및 그 제조방법
|
|
KR100254472B1
(ko)
*
|
1997-11-01 |
2000-05-01 |
김영환 |
신규한 말레이미드계 또는 지방족 환형 올레핀계 단량체와 이들 단량체들의 공중합체수지 및 이수지를 이용한 포토레지스트
|
|
US6057083A
(en)
|
1997-11-04 |
2000-05-02 |
Shipley Company, L.L.C. |
Polymers and photoresist compositions
|
|
KR100321080B1
(ko)
|
1997-12-29 |
2002-11-22 |
주식회사 하이닉스반도체 |
공중합체수지와이의제조방법및이수지를이용한포토레지스트
|
|
KR100313150B1
(ko)
*
|
1997-12-31 |
2001-12-28 |
박종섭 |
리소콜릴에시딜(메타)아크릴레이트 단량체와 그를 도입한 공중합체 수지 및 이 수지를 이용한 포토레지스트
|
|
KR100354871B1
(ko)
|
1997-12-31 |
2003-03-10 |
주식회사 하이닉스반도체 |
공중합체수지와그제조방법및이수지를이용한포토레지스트
|
|
KR100520148B1
(ko)
|
1997-12-31 |
2006-05-12 |
주식회사 하이닉스반도체 |
신규한바이시클로알켄유도체와이를이용한포토레지스트중합체및이중합체를함유한포토레지스트조성물
|
|
US6165674A
(en)
*
|
1998-01-15 |
2000-12-26 |
Shipley Company, L.L.C. |
Polymers and photoresist compositions for short wavelength imaging
|
|
US6190839B1
(en)
|
1998-01-15 |
2001-02-20 |
Shipley Company, L.L.C. |
High conformality antireflective coating compositions
|
|
US6037097A
(en)
*
|
1998-01-27 |
2000-03-14 |
International Business Machines Corporation |
E-beam application to mask making using new improved KRS resist system
|
|
ID26627A
(id)
|
1998-02-23 |
2001-01-25 |
B F Goodrich Company Cs |
Komposisi-komposisi penahan polisiklik dengan tahanan etsa yang ditingkatkan
|
|
US6303263B1
(en)
|
1998-02-25 |
2001-10-16 |
International Business Machines Machines |
Irradiation sensitive positive-tone resists using polymers containing two acid sensitive protecting groups
|
|
US6103447A
(en)
|
1998-02-25 |
2000-08-15 |
International Business Machines Corp. |
Approach to formulating irradiation sensitive positive resists
|
|
DE69905959T2
(de)
|
1998-04-06 |
2003-12-04 |
Fuji Photo Film Co Ltd |
Lichtempfindliche Harzzusammensetzung
|
|
US6146806A
(en)
*
|
1998-04-06 |
2000-11-14 |
Nec Corporation |
Negative photoresist composition using polymer having 1,2-diol structure and process for forming pattern using the same
|
|
KR100252062B1
(ko)
*
|
1998-04-20 |
2000-06-01 |
윤종용 |
포토레지스트용 중합체 혼합물, 이를 포함하는포토레지스트 조성물 및 이의 제조방법
|
|
KR100252061B1
(ko)
*
|
1998-04-20 |
2000-06-01 |
윤종용 |
포토레지스트용 중합체, 이를 포함하는 포토레지스트 조성물 및이의 제조방법
|
|
US6074800A
(en)
*
|
1998-04-23 |
2000-06-13 |
International Business Machines Corporation |
Photo acid generator compounds, photo resists, and method for improving bias
|
|
DE59908549D1
(de)
*
|
1998-04-24 |
2004-03-25 |
Infineon Technologies Ag |
Strahlungsempfindliches Gemisch und dessen Verwendung
|
|
KR100376983B1
(ko)
|
1998-04-30 |
2003-08-02 |
주식회사 하이닉스반도체 |
포토레지스트중합체및이를이용한미세패턴의형성방법
|
|
KR19990081722A
(ko)
|
1998-04-30 |
1999-11-15 |
김영환 |
카르복실기 함유 지환족 유도체 및 그의 제조방법
|
|
US6759483B2
(en)
|
1998-05-05 |
2004-07-06 |
Chemfirst Electronic Materials L.P. |
Preparation of homo-, co- and terpolymers of substituted styrenes
|
|
KR100261224B1
(ko)
|
1998-05-07 |
2000-09-01 |
윤종용 |
실리콘을 함유하는 폴리머 및 이를 포함하는 화학증폭형 레지스트 조성물
|
|
TW457277B
(en)
|
1998-05-11 |
2001-10-01 |
Shinetsu Chemical Co |
Ester compounds, polymers, resist composition and patterning process
|
|
DE69915928T2
(de)
*
|
1998-05-19 |
2005-04-14 |
Jsr Corp. |
Diazodisulfonverbindung und strahlungsempfindliche Harzzusammensetzung
|
|
KR100287175B1
(ko)
*
|
1998-05-20 |
2001-09-22 |
윤종용 |
화학 증폭형 포토레지스트의 용해 억제제 및 이를 포함하는 화학증폭형 포토레지스트 조성물
|
|
JP3175697B2
(ja)
*
|
1998-06-18 |
2001-06-11 |
日本電気株式会社 |
化学増幅系フォトレジスト
|
|
TW444027B
(en)
|
1998-06-30 |
2001-07-01 |
Ind Tech Res Inst |
Ring-opened polymer prepared from pericyclic olefin and photosensitive composition containing the polymer
|
|
US6103456A
(en)
*
|
1998-07-22 |
2000-08-15 |
Siemens Aktiengesellschaft |
Prevention of photoresist poisoning from dielectric antireflective coating in semiconductor fabrication
|
|
KR100403325B1
(ko)
|
1998-07-27 |
2004-03-24 |
주식회사 하이닉스반도체 |
포토레지스트중합체및이를이용한포토레지스트조성물
|
|
US6093517A
(en)
*
|
1998-07-31 |
2000-07-25 |
International Business Machines Corporation |
Calixarenes for use as dissolution inhibitors in lithographic photoresist compositions
|
|
KR20000015014A
(ko)
|
1998-08-26 |
2000-03-15 |
김영환 |
신규의 포토레지스트용 단량체, 중합체 및 이를 이용한 포토레지스트 조성물
|
|
JP3587743B2
(ja)
|
1998-08-26 |
2004-11-10 |
株式会社ハイニックスセミコンダクター |
フォトレジスト単量体とその製造方法、フォトレジスト共重合体とその製造方法、フォトレジスト組成物、フォトレジストパターン形成方法、および、半導体素子。
|
|
US6569971B2
(en)
|
1998-08-27 |
2003-05-27 |
Hyundai Electronics Industries Co., Ltd. |
Polymers for photoresist and photoresist compositions using the same
|
|
US6127089A
(en)
*
|
1998-08-28 |
2000-10-03 |
Advanced Micro Devices, Inc. |
Interconnect structure with low k dielectric materials and method of making the same with single and dual damascene techniques
|
|
US6136501A
(en)
*
|
1998-08-28 |
2000-10-24 |
Shipley Company, L.L.C. |
Polymers and photoresist compositions comprising same
|
|
JP3120402B2
(ja)
|
1998-09-03 |
2000-12-25 |
インターナショナル・ビジネス・マシーンズ・コーポレ−ション |
不活性化芳香族アミン化合物を含むフォトレジスト組成物
|
|
KR100504644B1
(ko)
*
|
1998-10-29 |
2005-08-04 |
신에쓰 가가꾸 고교 가부시끼가이샤 |
포지형 레지스트 재료
|
|
CA2353506A1
(en)
|
1998-11-02 |
2000-05-11 |
3M Innovative Properties Company |
Transparent conductive oxides for plastic flat panel displays
|
|
US6114085A
(en)
*
|
1998-11-18 |
2000-09-05 |
Clariant Finance (Bvi) Limited |
Antireflective composition for a deep ultraviolet photoresist
|
|
US6770413B1
(en)
|
1999-01-12 |
2004-08-03 |
Shipley Company, L.L.C. |
Hydroxyphenyl copolymers and photoresists comprising same
|
|
JP3680920B2
(ja)
|
1999-02-25 |
2005-08-10 |
信越化学工業株式会社 |
新規なエステル化合物、高分子化合物、レジスト材料、及びパターン形成方法
|
|
KR100314761B1
(ko)
|
1999-03-03 |
2001-11-17 |
윤덕용 |
노르보르넨에 콜릭산, 디옥시콜릭산 또는 리소콜릭산 유도체를 결합시킨 단량체를 이용한 중합체 및 이를 함유하는 포토레지스트 조성물
|
|
TWI226339B
(en)
|
1999-03-26 |
2005-01-11 |
Shinetsu Chemical Co |
High molecular weight compound and the method to prepare the same
|
|
TWI263861B
(en)
|
1999-03-26 |
2006-10-11 |
Shinetsu Chemical Co |
Resist material and pattern forming method
|
|
KR100320773B1
(ko)
|
1999-05-31 |
2002-01-17 |
윤종용 |
포토레지스트 조성물
|
|
US6187506B1
(en)
|
1999-08-05 |
2001-02-13 |
Clariant Finance (Bvi) Limited |
Antireflective coating for photoresist compositions
|
|
US6461789B1
(en)
|
1999-08-25 |
2002-10-08 |
Shin-Etsu Chemical Co., Ltd. |
Polymers, chemical amplification resist compositions and patterning process
|
|
US6436606B1
(en)
|
1999-08-30 |
2002-08-20 |
Shin-Etsu Chemical Co., Ltd. |
Polymers, resist compositions and patterning process
|
|
US6638684B2
(en)
|
1999-08-31 |
2003-10-28 |
Tokyo Ohka Kogyo Co., Ltd. |
Photosensitive laminate, process for forming resist pattern using same and positive resist composition
|
|
KR100308423B1
(ko)
|
1999-09-07 |
2001-09-26 |
주식회사 동진쎄미켐 |
화학 증폭 레지스트용 폴리머 및 이를 이용한 레지스트 조성물
|
|
TW527363B
(en)
|
1999-09-08 |
2003-04-11 |
Shinetsu Chemical Co |
Polymers, chemical amplification resist compositions and patterning process
|
|
US6369279B1
(en)
|
1999-09-08 |
2002-04-09 |
Shin-Etsu Chemical Co., Ltd. |
Styrene derivatives
|
|
JP3969909B2
(ja)
|
1999-09-27 |
2007-09-05 |
富士フイルム株式会社 |
ポジ型フォトレジスト組成物
|
|
KR100455538B1
(ko)
|
1999-10-13 |
2004-11-15 |
신에쓰 가가꾸 고교 가부시끼가이샤 |
스티렌 유도체
|
|
KR100549160B1
(ko)
|
1999-10-13 |
2006-02-03 |
신에쓰 가가꾸 고교 가부시끼가이샤 |
고분자 화합물, 화학 증폭 레지스트 재료 및 패턴 형성 방법
|
|
US6673511B1
(en)
|
1999-10-29 |
2004-01-06 |
Shin-Etsu Chemical Co., Ltd. |
Resist composition
|
|
JP3755571B2
(ja)
|
1999-11-12 |
2006-03-15 |
信越化学工業株式会社 |
化学増幅ポジ型レジスト材料及びパターン形成方法
|
|
US6365322B1
(en)
|
1999-12-07 |
2002-04-02 |
Clariant Finance (Bvi) Limited |
Photoresist composition for deep UV radiation
|
|
JP3963624B2
(ja)
|
1999-12-22 |
2007-08-22 |
富士フイルム株式会社 |
遠紫外線露光用ポジ型フォトレジスト組成物
|
|
US6509138B2
(en)
|
2000-01-12 |
2003-01-21 |
Semiconductor Research Corporation |
Solventless, resistless direct dielectric patterning
|
|
KR100576201B1
(ko)
*
|
2000-01-17 |
2006-05-03 |
신에쓰 가가꾸 고교 가부시끼가이샤 |
화학 증폭형 레지스트 재료
|
|
EP1122605A3
(en)
|
2000-02-04 |
2001-09-19 |
JSR Corporation |
Radiation-sensitive resin composition
|
|
KR100592010B1
(ko)
|
2000-02-16 |
2006-06-22 |
신에쓰 가가꾸 고교 가부시끼가이샤 |
고분자 화합물, 화학 증폭 레지스트 재료 및 패턴 형성 방법
|
|
US6579658B2
(en)
|
2000-02-17 |
2003-06-17 |
Shin-Etsu Chemical Co., Ltd. |
Polymers, resist compositions and patterning process
|
|
US6783914B1
(en)
|
2000-02-25 |
2004-08-31 |
Massachusetts Institute Of Technology |
Encapsulated inorganic resists
|
|
DE10008840A1
(de)
|
2000-02-25 |
2001-09-06 |
Beiersdorf Ag |
Strukturierte UV-vernetzte Acrylathaftklebemassen
|
|
DE10008843A1
(de)
|
2000-02-25 |
2001-09-06 |
Beiersdorf Ag |
Polare Acrylathaftklebemassen
|
|
US6538086B1
(en)
|
2000-02-28 |
2003-03-25 |
Industrial Technology Research Institute |
Polymer with a pericyclic protective group and resist composition containing the same
|
|
JP4806486B2
(ja)
*
|
2000-02-28 |
2011-11-02 |
日東電工株式会社 |
紫外線架橋型粘着剤組成物とその製造方法ならびに粘着シ―トとその製造方法
|
|
KR100536540B1
(ko)
|
2000-03-07 |
2005-12-14 |
신에쓰 가가꾸 고교 가부시끼가이샤 |
화학 증폭 포지티브형 레지스트 재료
|
|
US6838224B2
(en)
|
2000-03-07 |
2005-01-04 |
Shi-Etsu Chemical Co., Ltd. |
Chemical amplification, positive resist compositions
|
|
TW538088B
(en)
|
2000-03-09 |
2003-06-21 |
Shinetsu Chemical Co |
Chemical amplification resist compositions
|
|
US7122288B2
(en)
|
2000-03-28 |
2006-10-17 |
Fujitsu Limited |
Negative resist composition, a method for forming a resist pattern thereof, and a method for fabricating a semiconductor device
|
|
AU2001253582B2
(en)
|
2000-04-17 |
2006-02-02 |
Yale University |
Method for measuring diffusion of photogenerated catalyst in chemically amplified resists
|
|
TW520357B
(en)
|
2000-04-20 |
2003-02-11 |
Shinetsu Chemical Co |
Novel ester compounds, polymers, resist compositions and patterning process
|
|
US6692883B2
(en)
|
2000-04-21 |
2004-02-17 |
Fuji Photo Film Co., Ltd. |
Positive photoresist composition
|
|
KR100660513B1
(ko)
|
2000-04-27 |
2006-12-22 |
신에쓰 가가꾸 고교 가부시끼가이샤 |
고분자 화합물, 화학 증폭 레지스트 재료 및 패턴 형성 방법
|
|
JP4768103B2
(ja)
*
|
2000-06-06 |
2011-09-07 |
日東電工株式会社 |
粘着剤組成物とその粘着シ―ト類およびこれらの製造方法
|
|
JP4576737B2
(ja)
|
2000-06-09 |
2010-11-10 |
Ｊｓｒ株式会社 |
感放射線性樹脂組成物
|
|
EP1303791B1
(en)
*
|
2000-06-15 |
2009-08-19 |
3M Innovative Properties Company |
Multicolor imaging using multiphoton photochemical processes
|
|
EP1295179B1
(en)
*
|
2000-06-15 |
2013-05-22 |
3M Innovative Properties Company |
Multiphoton curing to provide encapsulated optical elements
|
|
US7060419B2
(en)
*
|
2000-06-15 |
2006-06-13 |
3M Innovative Properties Company |
Process for producing microfluidic articles
|
|
US6852766B1
(en)
|
2000-06-15 |
2005-02-08 |
3M Innovative Properties Company |
Multiphoton photosensitization system
|
|
DE60114820T2
(de)
*
|
2000-06-15 |
2006-09-14 |
3M Innovative Properties Co., St. Paul |
Mikroherstellungsverfahren für organische optische bauteile
|
|
WO2001096959A2
(en)
*
|
2000-06-15 |
2001-12-20 |
3M Innovative Properties Company |
Multidirectional photoreactive absorption method
|
|
US7118845B2
(en)
*
|
2000-06-15 |
2006-10-10 |
3M Innovative Properties Company |
Multiphoton photochemical process and articles preparable thereby
|
|
AU2001266919A1
(en)
*
|
2000-06-15 |
2001-12-24 |
3M Innovative Properties Company |
Multipass multiphoton absorption method and apparatus
|
|
US7265161B2
(en)
*
|
2002-10-02 |
2007-09-04 |
3M Innovative Properties Company |
Multi-photon reactive compositions with inorganic particles and method for fabricating structures
|
|
US6593431B2
(en)
|
2000-06-27 |
2003-07-15 |
Chemfirst Electronic Materials Lp |
Purification means
|
|
US6787611B2
(en)
*
|
2000-06-27 |
2004-09-07 |
Chemfirst Electronic Materials L.P. |
Purification means
|
|
US6447980B1
(en)
|
2000-07-19 |
2002-09-10 |
Clariant Finance (Bvi) Limited |
Photoresist composition for deep UV and process thereof
|
|
JP3712047B2
(ja)
|
2000-08-14 |
2005-11-02 |
信越化学工業株式会社 |
レジスト材料及びパターン形成方法
|
|
EP1204001B1
(en)
|
2000-11-01 |
2013-09-11 |
Shin-Etsu Chemical Co., Ltd. |
Resist composition and patterning process
|
|
JP4768115B2
(ja)
*
|
2000-12-01 |
2011-09-07 |
日東電工株式会社 |
紫外線架橋型粘着剤組成物とその製造方法ならびに粘着シ―トとその製造方法
|
|
EP1344109B1
(en)
|
2000-12-04 |
2008-05-07 |
Ciba Holding Inc. |
Onium salts and the use therof as latent acids
|
|
KR20020045566A
(ko)
|
2000-12-07 |
2002-06-19 |
카나가와 치히로 |
고분자 화합물의 제조 방법 및 이 고분자 화합물을 사용한레지스트 재료
|
|
US7261992B2
(en)
|
2000-12-21 |
2007-08-28 |
International Business Machines Corporation |
Fluorinated silsesquioxane polymers and use thereof in lithographic photoresist compositions
|
|
JP4697827B2
(ja)
*
|
2001-01-30 |
2011-06-08 |
三菱レイヨン株式会社 |
化学増幅型レジスト用樹脂の精製方法および化学増幅型レジスト用樹脂
|
|
JP3962893B2
(ja)
|
2001-02-09 |
2007-08-22 |
信越化学工業株式会社 |
高分子化合物、レジスト材料及びパターン形成方法
|
|
US6905555B2
(en)
|
2001-02-15 |
2005-06-14 |
Micell Technologies, Inc. |
Methods for transferring supercritical fluids in microelectronic and other industrial processes
|
|
US6641678B2
(en)
|
2001-02-15 |
2003-11-04 |
Micell Technologies, Inc. |
Methods for cleaning microelectronic structures with aqueous carbon dioxide systems
|
|
US6596093B2
(en)
|
2001-02-15 |
2003-07-22 |
Micell Technologies, Inc. |
Methods for cleaning microelectronic structures with cyclical phase modulation
|
|
US6602351B2
(en)
|
2001-02-15 |
2003-08-05 |
Micell Technologies, Inc. |
Methods for the control of contaminants following carbon dioxide cleaning of microelectronic structures
|
|
US6562146B1
(en)
|
2001-02-15 |
2003-05-13 |
Micell Technologies, Inc. |
Processes for cleaning and drying microelectronic structures using liquid or supercritical carbon dioxide
|
|
US6613157B2
(en)
|
2001-02-15 |
2003-09-02 |
Micell Technologies, Inc. |
Methods for removing particles from microelectronic structures
|
|
JP2002278053A
(ja)
|
2001-03-16 |
2002-09-27 |
Fuji Photo Film Co Ltd |
ポジ型フォトレジスト組成物
|
|
KR100749494B1
(ko)
|
2001-04-03 |
2007-08-14 |
삼성에스디아이 주식회사 |
화학증폭형 네가티브 포토레지스트용 중합체 및 포토레지스트 조성물
|
|
US6783917B2
(en)
|
2001-04-04 |
2004-08-31 |
Arch Specialty Chemicals, Inc. |
Silicon-containing acetal protected polymers and photoresists compositions thereof
|
|
TW588032B
(en)
*
|
2001-04-23 |
2004-05-21 |
Shinetsu Chemical Co |
New tertiary amine compound having ester structure and method for producing the same
|
|
JP3988517B2
(ja)
|
2001-04-27 |
2007-10-10 |
Ｊｓｒ株式会社 |
感放射線性樹脂組成物
|
|
US6936398B2
(en)
|
2001-05-09 |
2005-08-30 |
Massachusetts Institute Of Technology |
Resist with reduced line edge roughness
|
|
US6686429B2
(en)
|
2001-05-11 |
2004-02-03 |
Clariant Finance (Bvi) Limited |
Polymer suitable for photoresist compositions
|
|
US6737215B2
(en)
|
2001-05-11 |
2004-05-18 |
Clariant Finance (Bvi) Ltd |
Photoresist composition for deep ultraviolet lithography
|
|
TWI245043B
(en)
|
2001-06-25 |
2005-12-11 |
Shinetsu Chemical Co |
Novel ester compounds
|
|
TW584786B
(en)
|
2001-06-25 |
2004-04-21 |
Shinetsu Chemical Co |
Polymers, resist compositions and patterning process
|
|
JP3891257B2
(ja)
|
2001-06-25 |
2007-03-14 |
信越化学工業株式会社 |
高分子化合物、レジスト材料及びパターン形成方法
|
|
DE10131488B4
(de)
*
|
2001-06-29 |
2006-01-19 |
Infineon Technologies Ag |
Verfahren zur chemischen Nachverstärkung von Photoresists im UV-Bereich
|
|
DE10131667B4
(de)
|
2001-06-29 |
2007-05-31 |
Infineon Technologies Ag |
Negativ Resistprozess mit simultaner Entwicklung und Silylierung
|
|
DE10131489B4
(de)
*
|
2001-06-29 |
2007-04-12 |
Infineon Technologies Ag |
Negativ Resistprozess mit simultaner Entwicklung und chemischer Nachverstärkung von Resiststrukturen
|
|
DE10131487B4
(de)
*
|
2001-06-29 |
2005-11-24 |
Infineon Technologies Ag |
Negativer Resistprozess mit simultaner Entwicklung und Aromatisierung von Resiststrukturen
|
|
DE10142590A1
(de)
*
|
2001-08-31 |
2003-04-03 |
Infineon Technologies Ag |
Verfahren zur Seitenwandverstärkung von Resiststrukturen und zur Herstellung von Strukturen mit reduzierter Strukturgröße
|
|
US6673514B2
(en)
|
2001-09-07 |
2004-01-06 |
Kodak Polychrome Graphics Llc |
Imagable articles and compositions, and their use
|
|
JP2003107707A
(ja)
*
|
2001-09-28 |
2003-04-09 |
Clariant (Japan) Kk |
化学増幅型ポジ型感放射線性樹脂組成物
|
|
DE10147953B4
(de)
|
2001-09-28 |
2007-06-06 |
Infineon Technologies Ag |
CARL für Bioelektronik: Substratanbindung über isolierende Schicht
|
|
DE10153496B4
(de)
*
|
2001-10-31 |
2007-01-04 |
Infineon Technologies Ag |
Verfahren zur Aromatisierung und Cycloaliphatisierung von Fotoresists im UV-Bereich
|
|
DE10153497B4
(de)
*
|
2001-10-31 |
2006-04-06 |
Infineon Technologies Ag |
Verfahren zur Silylierung von Fotoresists im UV-Bereich
|
|
JP3890365B2
(ja)
|
2001-11-01 |
2007-03-07 |
富士フイルム株式会社 |
ポジ型レジスト組成物
|
|
US6723488B2
(en)
|
2001-11-07 |
2004-04-20 |
Clariant Finance (Bvi) Ltd |
Photoresist composition for deep UV radiation containing an additive
|
|
JP3901997B2
(ja)
*
|
2001-11-27 |
2007-04-04 |
富士通株式会社 |
レジスト材料、レジストパターン及びその製造方法、並びに、半導体装置及びその製造方法
|
|
JP4522628B2
(ja)
|
2001-11-28 |
2010-08-11 |
信越化学工業株式会社 |
新規なエステル化合物
|
|
DE60218342T2
(de)
*
|
2001-12-12 |
2007-10-31 |
Sumitomo Bakelite Co., Ltd. |
Polymerzusammensetzungen und deren verwendungen
|
|
JP3874092B2
(ja)
*
|
2001-12-26 |
2007-01-31 |
信越化学工業株式会社 |
高分子化合物、レジスト材料及びパターン形成方法
|
|
US6750266B2
(en)
*
|
2001-12-28 |
2004-06-15 |
3M Innovative Properties Company |
Multiphoton photosensitization system
|
|
US7070914B2
(en)
*
|
2002-01-09 |
2006-07-04 |
Az Electronic Materials Usa Corp. |
Process for producing an image using a first minimum bottom antireflective coating composition
|
|
US6800416B2
(en)
|
2002-01-09 |
2004-10-05 |
Clariant Finance (Bvi) Ltd. |
Negative deep ultraviolet photoresist
|
|
US6844131B2
(en)
|
2002-01-09 |
2005-01-18 |
Clariant Finance (Bvi) Limited |
Positive-working photoimageable bottom antireflective coating
|
|
JP3877605B2
(ja)
*
|
2002-02-08 |
2007-02-07 |
信越化学工業株式会社 |
ネガ型レジスト材料及びこれを用いたパターン形成方法
|
|
JP2005518476A
(ja)
*
|
2002-02-21 |
2005-06-23 |
ハネウェル・インターナショナル・インコーポレーテッド |
フッ素化された分子並びに、その製造及び使用法
|
|
DE10208786B4
(de)
*
|
2002-02-28 |
2006-02-09 |
Infineon Technologies Ag |
Verfahren zur Modifikation von Resiststrukturen und Resistschichten aus wässriger Phase
|
|
US20030190818A1
(en)
*
|
2002-04-03 |
2003-10-09 |
Ruben Carbonell |
Enhanced processing of performance films using high-diffusivity penetrants
|
|
US6864324B2
(en)
|
2002-04-19 |
2005-03-08 |
Chem First Electronic Materials L.P. |
Anhydrous, liquid phase process for preparing hydroxyl containing polymers of enhanced purity
|
|
US20040126695A1
(en)
*
|
2002-05-07 |
2004-07-01 |
Honeywell International, Inc. |
Fluorinated polymers
|
|
US20030235775A1
(en)
*
|
2002-06-13 |
2003-12-25 |
Munirathna Padmanaban |
Photoresist composition for deep ultraviolet lithography comprising a mixture of photoactive compounds
|
|
JP4139948B2
(ja)
|
2002-06-28 |
2008-08-27 |
日本電気株式会社 |
不飽和単量体、重合体、化学増幅レジスト組成物、および、パターン形成方法
|
|
JP2004043732A
(ja)
*
|
2002-07-15 |
2004-02-12 |
Three M Innovative Properties Co |
発泡性接着剤組成物
|
|
JP2004059844A
(ja)
*
|
2002-07-31 |
2004-02-26 |
Central Glass Co Ltd |
含フッ素高分子化合物
|
|
US20040067435A1
(en)
|
2002-09-17 |
2004-04-08 |
Fuji Photo Film Co., Ltd. |
Image forming material
|
|
US7232650B2
(en)
*
|
2002-10-02 |
2007-06-19 |
3M Innovative Properties Company |
Planar inorganic device
|
|
WO2004040376A1
(ja)
|
2002-10-29 |
2004-05-13 |
Jsr Corporation |
感放射線性樹脂組成物
|
|
US20040091813A1
(en)
*
|
2002-11-05 |
2004-05-13 |
Honeywell International Inc. |
Fluorinated polymers
|
|
US7264913B2
(en)
*
|
2002-11-21 |
2007-09-04 |
Az Electronic Materials Usa Corp. |
Antireflective compositions for photoresists
|
|
US7217492B2
(en)
|
2002-12-25 |
2007-05-15 |
Jsr Corporation |
Onium salt compound and radiation-sensitive resin composition
|
|
JP4222850B2
(ja)
*
|
2003-02-10 |
2009-02-12 |
Ｓｐａｎｓｉｏｎ Ｊａｐａｎ株式会社 |
感放射線性樹脂組成物、その製造法並びにそれを用いた半導体装置の製造方法
|
|
EP1597627A4
(en)
*
|
2003-02-20 |
2008-01-09 |
Promerus Llc |
RESOLUTION SPEED MODULATORS FOR PHOTORESISTAL COMPOSITIONS
|
|
TWI349831B
(en)
|
2003-02-20 |
2011-10-01 |
Maruzen Petrochem Co Ltd |
Resist polymer and method for producing the polymer
|
|
US20040166434A1
(en)
*
|
2003-02-21 |
2004-08-26 |
Dammel Ralph R. |
Photoresist composition for deep ultraviolet lithography
|
|
TWI344966B
(en)
|
2003-03-10 |
2011-07-11 |
Maruzen Petrochem Co Ltd |
Novel thiol compound, copolymer and method for producing the copolymer
|
|
WO2004102162A2
(en)
*
|
2003-03-21 |
2004-11-25 |
The Regents Of The University Of California |
Inorganic oxides comprising multiple surface-bound functional groups
|
|
JP4068006B2
(ja)
*
|
2003-05-07 |
2008-03-26 |
信越化学工業株式会社 |
サーマルフロー工程を用いた微細なコンタクトホール形成方法
|
|
US7834113B2
(en)
*
|
2003-05-08 |
2010-11-16 |
E. I. Du Pont De Nemours And Company |
Photoresist compositions and processes for preparing the same
|
|
JP2004354417A
(ja)
*
|
2003-05-27 |
2004-12-16 |
Shin Etsu Chem Co Ltd |
ポジ型レジスト材料並びにこれを用いたパターン形成方法
|
|
JP4360844B2
(ja)
*
|
2003-06-16 |
2009-11-11 |
富士フイルム株式会社 |
ポジ型レジスト組成物
|
|
JP4088784B2
(ja)
*
|
2003-06-19 |
2008-05-21 |
信越化学工業株式会社 |
高分子化合物の製造方法及びレジスト材料
|
|
US7090963B2
(en)
*
|
2003-06-25 |
2006-08-15 |
International Business Machines Corporation |
Process for forming features of 50 nm or less half-pitch with chemically amplified resist imaging
|
|
JP4085034B2
(ja)
*
|
2003-07-17 |
2008-04-30 |
信越化学工業株式会社 |
化合物、高分子化合物、レジスト材料及びパターン形成方法
|
|
US20060210785A1
(en)
*
|
2003-07-18 |
2006-09-21 |
Oji Paper Co., Ltd. |
Foamed product in a sheet form and method for production thereof
|
|
KR100527411B1
(ko)
*
|
2003-08-23 |
2005-11-09 |
한국과학기술원 |
신규한 옥세판-2-온 구조를 함유하는 단량체, 이들의중합체를 함유하는 포토레지스트 조성물 및 그 제조방법과포토레지스트 패턴의 형성 방법
|
|
US7166418B2
(en)
*
|
2003-09-03 |
2007-01-23 |
Matsushita Electric Industrial Co., Ltd. |
Sulfonamide compound, polymer compound, resist material and pattern formation method
|
|
JP2005099683A
(ja)
*
|
2003-09-05 |
2005-04-14 |
Tokyo Ohka Kogyo Co Ltd |
ポジ型ホトレジスト組成物及びこれを用いたレジストパターンの形成方法
|
|
US7169530B2
(en)
*
|
2003-10-02 |
2007-01-30 |
Matsushita Electric Industrial Co., Ltd. |
Polymer compound, resist material and pattern formation method
|
|
US7060775B2
(en)
*
|
2003-10-02 |
2006-06-13 |
Matsushita Electronic Industrial Co., Ltd. |
Polymer compound, resist material and pattern formation method
|
|
US7232641B2
(en)
*
|
2003-10-08 |
2007-06-19 |
Shin-Etsu Chemical Co., Ltd. |
Polymerizable compound, polymer, positive-resist composition, and patterning process using the same
|
|
JP3759526B2
(ja)
|
2003-10-30 |
2006-03-29 |
丸善石油化学株式会社 |
半導体リソグラフィー用共重合体の製造方法
|
|
CN100392444C
(zh)
*
|
2003-12-05 |
2008-06-04 |
3M创新有限公司 |
制造光子晶体和其中可控制的缺陷的方法
|
|
US20050124712A1
(en)
*
|
2003-12-05 |
2005-06-09 |
3M Innovative Properties Company |
Process for producing photonic crystals
|
|
US7189491B2
(en)
*
|
2003-12-11 |
2007-03-13 |
Az Electronic Materials Usa Corp. |
Photoresist composition for deep UV and process thereof
|
|
JP2005220274A
(ja)
*
|
2004-02-09 |
2005-08-18 |
Shin Etsu Chem Co Ltd |
高分子化合物、レジスト材料及びパターン形成方法
|
|
US7473512B2
(en)
*
|
2004-03-09 |
2009-01-06 |
Az Electronic Materials Usa Corp. |
Process of imaging a deep ultraviolet photoresist with a top coating and materials thereof
|
|
JP4199687B2
(ja)
|
2004-03-17 |
2008-12-17 |
富士フイルム株式会社 |
平版印刷版原版
|
|
US20050214674A1
(en)
*
|
2004-03-25 |
2005-09-29 |
Yu Sui |
Positive-working photoimageable bottom antireflective coating
|
|
US7081511B2
(en)
*
|
2004-04-05 |
2006-07-25 |
Az Electronic Materials Usa Corp. |
Process for making polyesters
|
|
US7060416B2
(en)
*
|
2004-04-08 |
2006-06-13 |
Eastman Kodak Company |
Positive-working, thermally sensitive imageable element
|
|
EP1741730B1
(en)
*
|
2004-04-27 |
2010-05-12 |
Tokyo Ohka Kogyo Co., Ltd. |
Resist protecting film forming material for immersion exposure process and resist pattern forming method using the protecting film
|
|
JP4360264B2
(ja)
*
|
2004-04-30 |
2009-11-11 |
Ｊｓｒ株式会社 |
ポジ型感放射線性樹脂組成物
|
|
JP3978215B2
(ja)
*
|
2004-05-25 |
2007-09-19 |
松下電器産業株式会社 |
レジスト材料及びパターン形成方法
|
|
JP3978217B2
(ja)
*
|
2004-05-27 |
2007-09-19 |
松下電器産業株式会社 |
レジスト材料及びパターン形成方法
|
|
JP3978216B2
(ja)
*
|
2004-05-27 |
2007-09-19 |
松下電器産業株式会社 |
レジスト材料及びパターン形成方法
|
|
JP2005344009A
(ja)
*
|
2004-06-03 |
2005-12-15 |
Shin Etsu Chem Co Ltd |
レジスト材料用高分子化合物及びその製造方法並びに化学増幅ポジ型レジスト材料
|
|
JP4606136B2
(ja)
*
|
2004-06-09 |
2011-01-05 |
富士通株式会社 |
多層体、レジストパターン形成方法、微細加工パターンを有する装置の製造方法および電子装置
|
|
JP2006011054A
(ja)
*
|
2004-06-25 |
2006-01-12 |
Shin Etsu Chem Co Ltd |
リンス液及びこれを用いたレジストパターン形成方法
|
|
JP2006021396A
(ja)
|
2004-07-07 |
2006-01-26 |
Fuji Photo Film Co Ltd |
平版印刷版原版および平版印刷方法
|
|
ATE398298T1
(de)
|
2004-07-20 |
2008-07-15 |
Fujifilm Corp |
Bilderzeugendes material
|
|
JP4368267B2
(ja)
*
|
2004-07-30 |
2009-11-18 |
東京応化工業株式会社 |
レジスト保護膜形成用材料、およびこれを用いたレジストパターン形成方法
|
|
US7507521B2
(en)
*
|
2004-08-09 |
2009-03-24 |
Intel Corporation |
Silicon based optically degraded arc for lithographic patterning
|
|
US20060057501A1
(en)
*
|
2004-09-15 |
2006-03-16 |
Hengpeng Wu |
Antireflective compositions for photoresists
|
|
US7691556B2
(en)
*
|
2004-09-15 |
2010-04-06 |
Az Electronic Materials Usa Corp. |
Antireflective compositions for photoresists
|
|
JP4368282B2
(ja)
|
2004-09-24 |
2009-11-18 |
富士フイルム株式会社 |
ポジ型レジスト組成物及びそれを用いたパターン形成方法
|
|
JP4404734B2
(ja)
|
2004-09-27 |
2010-01-27 |
富士フイルム株式会社 |
平版印刷版原版
|
|
JP4544085B2
(ja)
*
|
2004-09-28 |
2010-09-15 |
Ｊｓｒ株式会社 |
ポジ型感放射線性樹脂組成物
|
|
US7687225B2
(en)
*
|
2004-09-29 |
2010-03-30 |
Intel Corporation |
Optical coatings
|
|
US7537879B2
(en)
|
2004-11-22 |
2009-05-26 |
Az Electronic Materials Usa Corp. |
Photoresist composition for deep UV and process thereof
|
|
DE602005027888D1
(de)
|
2004-12-03 |
2011-06-16 |
Jsr Corp |
Zusammensetzung zur bildung eines antireflexionsfilms, beschichtetes produkt und verfahren zur herstellung einer resiststruktur
|
|
JP4789599B2
(ja)
|
2004-12-06 |
2011-10-12 |
ローム・アンド・ハース・エレクトロニック・マテリアルズ，エル．エル．シー． |
フォトレジスト組成物
|
|
US20060150846A1
(en)
|
2004-12-13 |
2006-07-13 |
Fuji Photo Film Co. Ltd |
Lithographic printing method
|
|
JP2006181838A
(ja)
|
2004-12-27 |
2006-07-13 |
Fuji Photo Film Co Ltd |
平版印刷版原版
|
|
US20070299176A1
(en)
*
|
2005-01-28 |
2007-12-27 |
Markley Thomas J |
Photodefinable low dielectric constant material and method for making and using same
|
|
US7867779B2
(en)
|
2005-02-03 |
2011-01-11 |
Air Products And Chemicals, Inc. |
System and method comprising same for measurement and/or analysis of particles in gas stream
|
|
EP1691238A3
(en)
|
2005-02-05 |
2009-01-21 |
Rohm and Haas Electronic Materials, L.L.C. |
Coating compositions for use with an overcoated photoresist
|
|
JP4474296B2
(ja)
|
2005-02-09 |
2010-06-02 |
富士フイルム株式会社 |
平版印刷版原版
|
|
US20060177772A1
(en)
*
|
2005-02-10 |
2006-08-10 |
Abdallah David J |
Process of imaging a photoresist with multiple antireflective coatings
|
|
JP2006225476A
(ja)
*
|
2005-02-16 |
2006-08-31 |
Shin Etsu Chem Co Ltd |
ポジ型レジスト材料及びパターン形成方法
|
|
US7541131B2
(en)
*
|
2005-02-18 |
2009-06-02 |
Fujifilm Corporation |
Resist composition, compound for use in the resist composition and pattern forming method using the resist composition
|
|
US20060188812A1
(en)
*
|
2005-02-21 |
2006-08-24 |
Tomoki Nagai |
Phenolic hydroxyl group-containing copolymer and radiation-sensitive resin composition
|
|
US7255056B2
(en)
*
|
2005-03-04 |
2007-08-14 |
Lockheed Martin Corporation |
Stable, high-speed marine vessel
|
|
JP4595606B2
(ja)
*
|
2005-03-17 |
2010-12-08 |
Ｊｓｒ株式会社 |
反射防止膜形成用組成物、積層体およびレジストパターンの形成方法
|
|
JP4404792B2
(ja)
|
2005-03-22 |
2010-01-27 |
富士フイルム株式会社 |
平版印刷版原版
|
|
JP4770244B2
(ja)
*
|
2005-04-11 |
2011-09-14 |
Ｊｓｒ株式会社 |
オニウム塩、それを用いた感放射線性酸発生剤及びポジ型感放射線性樹脂組成物
|
|
JP4810862B2
(ja)
*
|
2005-04-11 |
2011-11-09 |
Ｊｓｒ株式会社 |
オニウム塩、それを用いた感放射線性酸発生剤及びポジ型感放射線性樹脂組成物
|
|
JP4731200B2
(ja)
|
2005-05-10 |
2011-07-20 |
丸善石油化学株式会社 |
半導体リソグラフィー用共重合体の製造方法
|
|
US7521170B2
(en)
*
|
2005-07-12 |
2009-04-21 |
Az Electronic Materials Usa Corp. |
Photoactive compounds
|
|
JP4815270B2
(ja)
|
2005-08-18 |
2011-11-16 |
富士フイルム株式会社 |
平版印刷版の作製方法及び作製装置
|
|
JP4759343B2
(ja)
|
2005-08-19 |
2011-08-31 |
富士フイルム株式会社 |
平版印刷版原版および平版印刷方法
|
|
EP1762895B1
(en)
|
2005-08-29 |
2016-02-24 |
Rohm and Haas Electronic Materials, L.L.C. |
Antireflective Hard Mask Compositions
|
|
US20070065756A1
(en)
*
|
2005-09-16 |
2007-03-22 |
Quantiscript Inc., Universite De Sherbrooke |
High sensitivity electron beam resist processing
|
|
US20070083995A1
(en)
*
|
2005-10-12 |
2007-04-19 |
Purdy William J |
Fluidized positioning and protection system
|
|
US7553905B2
(en)
*
|
2005-10-31 |
2009-06-30 |
Az Electronic Materials Usa Corp. |
Anti-reflective coatings
|
|
US7629106B2
(en)
*
|
2005-11-16 |
2009-12-08 |
Shin-Etsu Chemical Co., Ltd. |
Resist composition and patterning process using the same
|
|
TWI512402B
(zh)
|
2005-11-25 |
2015-12-11 |
Jsr Corp |
Sensitive radiation linear resin composition
|
|
US7583444B1
(en)
|
2005-12-21 |
2009-09-01 |
3M Innovative Properties Company |
Process for making microlens arrays and masterforms
|
|
WO2007073482A2
(en)
*
|
2005-12-21 |
2007-06-28 |
3M Innovative Properties Company |
Method and apparatus for processing multiphoton curable photoreactive compositions
|
|
EP1829942B1
(en)
|
2006-02-28 |
2012-09-26 |
Rohm and Haas Electronic Materials, L.L.C. |
Coating compositions for use with an overcoated photoresist
|
|
JP5100115B2
(ja)
*
|
2006-03-16 |
2012-12-19 |
東洋合成工業株式会社 |
スルホニウム塩及び酸発生剤
|
|
WO2007112309A2
(en)
*
|
2006-03-24 |
2007-10-04 |
3M Innovative Properties Company |
Process for making microneedles, microneedle arrays, masters, and replication tools
|
|
US7771913B2
(en)
*
|
2006-04-04 |
2010-08-10 |
Shin-Etsu Chemical Co., Ltd. |
Resist composition and patterning process using the same
|
|
US7300741B2
(en)
*
|
2006-04-25 |
2007-11-27 |
International Business Machines Corporation |
Advanced chemically amplified resist for sub 30 nm dense feature resolution
|
|
JP5030474B2
(ja)
|
2006-05-18 |
2012-09-19 |
丸善石油化学株式会社 |
半導体リソグラフィー用樹脂組成物
|
|
JP2009537870A
(ja)
|
2006-05-18 |
2009-10-29 |
スリーエム イノベイティブ プロパティズ カンパニー |
抽出構造体を備えた導光体の製造方法及びその方法で製造された導光体
|
|
US20070298349A1
(en)
*
|
2006-06-22 |
2007-12-27 |
Ruzhi Zhang |
Antireflective Coating Compositions Comprising Siloxane Polymer
|
|
US7704670B2
(en)
*
|
2006-06-22 |
2010-04-27 |
Az Electronic Materials Usa Corp. |
High silicon-content thin film thermosets
|
|
JP4784753B2
(ja)
*
|
2006-07-06 |
2011-10-05 |
信越化学工業株式会社 |
重合性エステル化合物、重合体、レジスト材料及びパターン形成方法
|
|
US7638262B2
(en)
|
2006-08-10 |
2009-12-29 |
Az Electronic Materials Usa Corp. |
Antireflective composition for photoresists
|
|
US7416834B2
(en)
*
|
2006-09-27 |
2008-08-26 |
Az Electronic Materials Usa Corp. |
Antireflective coating compositions
|
|
JP5183903B2
(ja)
*
|
2006-10-13 |
2013-04-17 |
信越化学工業株式会社 |
高分子化合物、レジスト材料及びこれを用いたパターン形成方法
|
|
US7666575B2
(en)
*
|
2006-10-18 |
2010-02-23 |
Az Electronic Materials Usa Corp |
Antireflective coating compositions
|
|
JP4784760B2
(ja)
*
|
2006-10-20 |
2011-10-05 |
信越化学工業株式会社 |
レジスト材料及びパターン形成方法
|
|
JP2008106084A
(ja)
*
|
2006-10-23 |
2008-05-08 |
Maruzen Petrochem Co Ltd |
半導体リソグラフィー用共重合体、組成物並びに該共重合体の製造方法
|
|
JP4355011B2
(ja)
*
|
2006-11-07 |
2009-10-28 |
丸善石油化学株式会社 |
液浸リソグラフィー用共重合体及び組成物
|
|
JP5588095B2
(ja)
*
|
2006-12-06 |
2014-09-10 |
丸善石油化学株式会社 |
半導体リソグラフィー用共重合体とその製造方法
|
|
TW200836002A
(en)
*
|
2006-12-19 |
2008-09-01 |
Cheil Ind Inc |
Photosensitive resin composition and organic insulating film produced using the same
|
|
WO2008078410A1
(ja)
|
2006-12-22 |
2008-07-03 |
Maruzen Petrochemical Co., Ltd. |
半導体リソグラフィー用重合体の製造方法
|
|
US8637229B2
(en)
*
|
2006-12-25 |
2014-01-28 |
Fujifilm Corporation |
Pattern forming method, resist composition for multiple development used in the pattern forming method, developer for negative development used in the pattern forming method, and rinsing solution for negative development used in the pattern forming method
|
|
JP5186532B2
(ja)
*
|
2006-12-25 |
2013-04-17 |
富士フイルム株式会社 |
パターン形成方法、該パターン形成方法に用いられる多重現像用ポジ型レジスト組成物、該パターン形成方法に用いられるネガ現像用現像液及び該パターン形成方法に用いられるネガ現像用リンス液
|
|
JP4554665B2
(ja)
|
2006-12-25 |
2010-09-29 |
富士フイルム株式会社 |
パターン形成方法、該パターン形成方法に用いられる多重現像用ポジ型レジスト組成物、該パターン形成方法に用いられるネガ現像用現像液及び該パターン形成方法に用いられるネガ現像用リンス液
|
|
US8530148B2
(en)
*
|
2006-12-25 |
2013-09-10 |
Fujifilm Corporation |
Pattern forming method, resist composition for multiple development used in the pattern forming method, developer for negative development used in the pattern forming method, and rinsing solution for negative development used in the pattern forming method
|
|
US7824844B2
(en)
*
|
2007-01-19 |
2010-11-02 |
Az Electronic Materials Usa Corp. |
Solvent mixtures for antireflective coating compositions for photoresists
|
|
US7875408B2
(en)
|
2007-01-25 |
2011-01-25 |
International Business Machines Corporation |
Bleachable materials for lithography
|
|
TWI374478B
(en)
|
2007-02-13 |
2012-10-11 |
Rohm & Haas Elect Mat |
Electronic device manufacture
|
|
US7736837B2
(en)
*
|
2007-02-20 |
2010-06-15 |
Az Electronic Materials Usa Corp. |
Antireflective coating composition based on silicon polymer
|
|
US8026040B2
(en)
*
|
2007-02-20 |
2011-09-27 |
Az Electronic Materials Usa Corp. |
Silicone coating composition
|
|
EP2132253A1
(en)
*
|
2007-02-26 |
2009-12-16 |
AZ Electronic Materials USA Corp. |
Process for making siloxane polymers
|
|
JP2008208266A
(ja)
|
2007-02-27 |
2008-09-11 |
Fujifilm Corp |
インク組成物、インクジェット記録方法、印刷物、平版印刷版の製造方法、および平版印刷版
|
|
JP2010519398A
(ja)
|
2007-02-27 |
2010-06-03 |
エイゼット・エレクトロニック・マテリアルズ・ユーエスエイ・コーポレイション |
ケイ素に基づく反射防止膜用組成物
|
|
JP5060986B2
(ja)
*
|
2007-02-27 |
2012-10-31 |
富士フイルム株式会社 |
ポジ型レジスト組成物及びパターン形成方法
|
|
EP2138897B1
(en)
*
|
2007-03-20 |
2016-08-03 |
Fujitsu Limited |
Conductive anti-reflection film, method for formation of resist pattern
|
|
JP2008233660A
(ja)
|
2007-03-22 |
2008-10-02 |
Fujifilm Corp |
浸漬型平版印刷版用自動現像装置およびその方法
|
|
EP1972440B1
(en)
|
2007-03-23 |
2010-06-23 |
FUJIFILM Corporation |
Negative lithographic printing plate precursor and lithographic printing method using the same
|
|
JP4860525B2
(ja)
|
2007-03-27 |
2012-01-25 |
富士フイルム株式会社 |
硬化性組成物及び平版印刷版原版
|
|
US8182975B2
(en)
*
|
2007-03-28 |
2012-05-22 |
Fujifilm Corporation |
Positive resist composition and pattern forming method using the same
|
|
EP1975702B1
(en)
|
2007-03-29 |
2013-07-24 |
FUJIFILM Corporation |
Colored photocurable composition for solid state image pick-up device, color filter and method for production thereof, and solid state image pick-up device
|
|
JP5030638B2
(ja)
|
2007-03-29 |
2012-09-19 |
富士フイルム株式会社 |
カラーフィルタ及びその製造方法
|
|
EP1974914B1
(en)
|
2007-03-29 |
2014-02-26 |
FUJIFILM Corporation |
Method of preparing lithographic printing plate
|
|
US7498116B2
(en)
*
|
2007-03-30 |
2009-03-03 |
Fujifilm Corporation |
Resist composition and pattern formation method using the same
|
|
EP1975710B1
(en)
|
2007-03-30 |
2013-10-23 |
FUJIFILM Corporation |
Plate-making method of lithographic printing plate precursor
|
|
JP5159141B2
(ja)
|
2007-03-30 |
2013-03-06 |
富士フイルム株式会社 |
インク組成物、インクジェット記録方法、印刷物、平版印刷版の作製方法及び平版印刷版
|
|
EP1975706A3
(en)
|
2007-03-30 |
2010-03-03 |
FUJIFILM Corporation |
Lithographic printing plate precursor
|
|
KR101485844B1
(ko)
|
2007-04-06 |
2015-01-26 |
롬 앤드 하스 일렉트로닉 머트어리얼즈 엘엘씨 |
코팅 조성물
|
|
US8603733B2
(en)
|
2007-04-13 |
2013-12-10 |
Fujifilm Corporation |
Pattern forming method, and resist composition, developer and rinsing solution used in the pattern forming method
|
|
US8034547B2
(en)
*
|
2007-04-13 |
2011-10-11 |
Fujifilm Corporation |
Pattern forming method, resist composition to be used in the pattern forming method, negative developing solution to be used in the pattern forming method and rinsing solution for negative development to be used in the pattern forming method
|
|
JP4562784B2
(ja)
|
2007-04-13 |
2010-10-13 |
富士フイルム株式会社 |
パターン形成方法、該パターン形成方法に用いられるレジスト組成物、現像液及びリンス液
|
|
US20080264672A1
(en)
*
|
2007-04-26 |
2008-10-30 |
Air Products And Chemicals, Inc. |
Photoimprintable Low Dielectric Constant Material and Method for Making and Using Same
|
|
US8476001B2
(en)
|
2007-05-15 |
2013-07-02 |
Fujifilm Corporation |
Pattern forming method
|
|
WO2008140119A1
(ja)
*
|
2007-05-15 |
2008-11-20 |
Fujifilm Corporation |
パターン形成方法
|
|
US20080284039A1
(en)
*
|
2007-05-18 |
2008-11-20 |
International Business Machines Corporation |
Interconnect structures with ternary patterned features generated from two lithographic processes
|
|
US8017296B2
(en)
*
|
2007-05-22 |
2011-09-13 |
Az Electronic Materials Usa Corp. |
Antireflective coating composition comprising fused aromatic rings
|
|
JP4617337B2
(ja)
*
|
2007-06-12 |
2011-01-26 |
富士フイルム株式会社 |
パターン形成方法
|
|
US8617794B2
(en)
|
2007-06-12 |
2013-12-31 |
Fujifilm Corporation |
Method of forming patterns
|
|
JP4590431B2
(ja)
*
|
2007-06-12 |
2010-12-01 |
富士フイルム株式会社 |
パターン形成方法
|
|
US8632942B2
(en)
|
2007-06-12 |
2014-01-21 |
Fujifilm Corporation |
Method of forming patterns
|
|
JP4783853B2
(ja)
*
|
2007-06-12 |
2011-09-28 |
富士フイルム株式会社 |
ネガ型現像用レジスト組成物を用いたパターン形成方法
|
|
EP2006738B1
(en)
|
2007-06-21 |
2017-09-06 |
Fujifilm Corporation |
Lithographic printing plate precursor
|
|
EP2006091B1
(en)
|
2007-06-22 |
2010-12-08 |
FUJIFILM Corporation |
Lithographic printing plate precursor and plate making method
|
|
JP5213375B2
(ja)
|
2007-07-13 |
2013-06-19 |
富士フイルム株式会社 |
顔料分散液、硬化性組成物、それを用いるカラーフィルタ及び固体撮像素子
|
|
US20090035704A1
(en)
*
|
2007-08-03 |
2009-02-05 |
Hong Zhuang |
Underlayer Coating Composition Based on a Crosslinkable Polymer
|
|
US20090042148A1
(en)
*
|
2007-08-06 |
2009-02-12 |
Munirathna Padmanaban |
Photoresist Composition for Deep UV and Process Thereof
|
|
WO2009020029A1
(ja)
*
|
2007-08-09 |
2009-02-12 |
Jsr Corporation |
感放射線性樹脂組成物
|
|
US20090042133A1
(en)
*
|
2007-08-10 |
2009-02-12 |
Zhong Xiang |
Antireflective Coating Composition
|
|
EP2197645B1
(en)
|
2007-09-06 |
2014-10-22 |
3M Innovative Properties Company |
Methods of forming molds and methods of forming articles using said molds
|
|
EP2205521A4
(en)
*
|
2007-09-06 |
2013-09-11 |
3M Innovative Properties Co |
TOOL FOR MANUFACTURING MICROSTRUCTURE ARTICLES
|
|
JP5951928B2
(ja)
|
2007-09-06 |
2016-07-13 |
スリーエム イノベイティブ プロパティズ カンパニー |
光出力の領域制御を提供する光抽出構造体を有する光ガイド
|
|
JP5089303B2
(ja)
*
|
2007-09-13 |
2012-12-05 |
三菱レイヨン株式会社 |
化学増幅型レジスト用樹脂
|
|
JP2009083106A
(ja)
|
2007-09-27 |
2009-04-23 |
Fujifilm Corp |
平版印刷版用版面保護剤及び平版印刷版の製版方法
|
|
JP4890403B2
(ja)
|
2007-09-27 |
2012-03-07 |
富士フイルム株式会社 |
平版印刷版原版
|
|
JP2009085984A
(ja)
|
2007-09-27 |
2009-04-23 |
Fujifilm Corp |
平版印刷版原版
|
|
JP5244518B2
(ja)
|
2007-09-28 |
2013-07-24 |
富士フイルム株式会社 |
平版印刷版原版及び平版印刷版の作製方法
|
|
JP4951454B2
(ja)
|
2007-09-28 |
2012-06-13 |
富士フイルム株式会社 |
平版印刷版の作成方法
|
|
JP4911469B2
(ja)
|
2007-09-28 |
2012-04-04 |
富士フイルム株式会社 |
レジスト組成物及びこれを用いたパターン形成方法
|
|
JP5055077B2
(ja)
|
2007-09-28 |
2012-10-24 |
富士フイルム株式会社 |
画像形成方法および平版印刷版原版
|
|
EP2042311A1
(en)
|
2007-09-28 |
2009-04-01 |
FUJIFILM Corporation |
Lithographic printing plate precursor, method of preparing lithographic printing plate and lithographic printing method
|
|
JP5039492B2
(ja)
*
|
2007-09-28 |
2012-10-03 |
富士フイルム株式会社 |
ポジ型レジスト組成物およびこれを用いたパターン形成方法
|
|
JP4994175B2
(ja)
|
2007-09-28 |
2012-08-08 |
富士フイルム株式会社 |
平版印刷版原版、及びそれに用いる共重合体の製造方法
|
|
JP4790682B2
(ja)
|
2007-09-28 |
2011-10-12 |
富士フイルム株式会社 |
平版印刷版原版
|
|
JP5039493B2
(ja)
*
|
2007-09-28 |
2012-10-03 |
富士フイルム株式会社 |
ポジ型レジスト組成物およびこれを用いたパターン形成方法
|
|
JP5002399B2
(ja)
|
2007-09-28 |
2012-08-15 |
富士フイルム株式会社 |
平版印刷版原版の処理方法
|
|
WO2009048808A1
(en)
*
|
2007-10-11 |
2009-04-16 |
3M Innovative Properties Company |
Chromatic confocal sensor
|
|
US8088548B2
(en)
*
|
2007-10-23 |
2012-01-03 |
Az Electronic Materials Usa Corp. |
Bottom antireflective coating compositions
|
|
JP2009199061A
(ja)
|
2007-11-12 |
2009-09-03 |
Rohm & Haas Electronic Materials Llc |
オーバーコートされたフォトレジストと共に用いるためのコーティング組成物
|
|
CN101855026A
(zh)
|
2007-11-14 |
2010-10-06 |
富士胶片株式会社 |
干燥涂布膜的方法和制造平版印刷版前体的方法
|
|
US8039201B2
(en)
*
|
2007-11-21 |
2011-10-18 |
Az Electronic Materials Usa Corp. |
Antireflective coating composition and process thereof
|
|
US7858287B2
(en)
*
|
2007-11-30 |
2010-12-28 |
Hyogo Prefecture |
Photosensitive resin, and photosensitive composition
|
|
JP2009139852A
(ja)
|
2007-12-10 |
2009-06-25 |
Fujifilm Corp |
平版印刷版の作製方法及び平版印刷版原版
|
|
US8455846B2
(en)
*
|
2007-12-12 |
2013-06-04 |
3M Innovative Properties Company |
Method for making structures with improved edge definition
|
|
US20090162800A1
(en)
*
|
2007-12-20 |
2009-06-25 |
David Abdallah |
Process for Imaging a Photoresist Coated over an Antireflective Coating
|
|
JP5066452B2
(ja)
|
2008-01-09 |
2012-11-07 |
富士フイルム株式会社 |
平版印刷版用現像処理方法
|
|
JP2009186997A
(ja)
|
2008-01-11 |
2009-08-20 |
Fujifilm Corp |
平版印刷版原版、平版印刷版の作製方法及び平版印刷版方法
|
|
JP5155677B2
(ja)
|
2008-01-22 |
2013-03-06 |
富士フイルム株式会社 |
平版印刷版原版、およびその製版方法
|
|
TWI452419B
(zh)
*
|
2008-01-28 |
2014-09-11 |
Az Electronic Mat Ip Japan Kk |
細微圖案光罩及其製造方法、及使用其之細微圖案形成方法
|
|
JP2009184188A
(ja)
|
2008-02-05 |
2009-08-20 |
Fujifilm Corp |
平版印刷版原版および印刷方法
|
|
WO2009108543A2
(en)
|
2008-02-26 |
2009-09-03 |
3M Innovative Properties Company |
Multi-photon exposure system
|
|
JP5175582B2
(ja)
|
2008-03-10 |
2013-04-03 |
富士フイルム株式会社 |
平版印刷版の作製方法
|
|
JP2009214428A
(ja)
|
2008-03-11 |
2009-09-24 |
Fujifilm Corp |
平版印刷版原版および平版印刷方法
|
|
JP2009229771A
(ja)
|
2008-03-21 |
2009-10-08 |
Fujifilm Corp |
平版印刷版用自動現像方法
|
|
JP4940174B2
(ja)
|
2008-03-21 |
2012-05-30 |
富士フイルム株式会社 |
平版印刷版用自動現像装置
|
|
JP2009236355A
(ja)
|
2008-03-26 |
2009-10-15 |
Fujifilm Corp |
乾燥方法及び装置
|
|
US7989144B2
(en)
*
|
2008-04-01 |
2011-08-02 |
Az Electronic Materials Usa Corp |
Antireflective coating composition
|
|
JP5164640B2
(ja)
|
2008-04-02 |
2013-03-21 |
富士フイルム株式会社 |
平版印刷版原版
|
|
US20090253080A1
(en)
*
|
2008-04-02 |
2009-10-08 |
Dammel Ralph R |
Photoresist Image-Forming Process Using Double Patterning
|
|
US20090253081A1
(en)
*
|
2008-04-02 |
2009-10-08 |
David Abdallah |
Process for Shrinking Dimensions Between Photoresist Pattern Comprising a Pattern Hardening Step
|
|
US7932018B2
(en)
*
|
2008-05-06 |
2011-04-26 |
Az Electronic Materials Usa Corp. |
Antireflective coating composition
|
|
IL196690A0
(en)
*
|
2008-05-29 |
2011-08-01 |
Plasan Sasa Ltd |
Interchangeable door
|
|
US8221965B2
(en)
*
|
2008-07-08 |
2012-07-17 |
Az Electronic Materials Usa Corp. |
Antireflective coating compositions
|
|
US8329387B2
(en)
|
2008-07-08 |
2012-12-11 |
Az Electronic Materials Usa Corp. |
Antireflective coating compositions
|
|
JP5364444B2
(ja)
*
|
2008-07-15 |
2013-12-11 |
東京応化工業株式会社 |
レジスト組成物、レジストパターン形成方法、化合物、酸発生剤
|
|
US20100040838A1
(en)
*
|
2008-08-15 |
2010-02-18 |
Abdallah David J |
Hardmask Process for Forming a Reverse Tone Image
|
|
JP5183380B2
(ja)
|
2008-09-09 |
2013-04-17 |
富士フイルム株式会社 |
赤外線レーザ用感光性平版印刷版原版
|
|
US20100092894A1
(en)
*
|
2008-10-14 |
2010-04-15 |
Weihong Liu |
Bottom Antireflective Coating Compositions
|
|
JP5591465B2
(ja)
|
2008-10-30 |
2014-09-17 |
丸善石油化学株式会社 |
濃度が均一な半導体リソグラフィー用共重合体溶液の製造方法
|
|
US8455176B2
(en)
*
|
2008-11-12 |
2013-06-04 |
Az Electronic Materials Usa Corp. |
Coating composition
|
|
US20100119980A1
(en)
*
|
2008-11-13 |
2010-05-13 |
Rahman M Dalil |
Antireflective Coating Composition Comprising Fused Aromatic Rings
|
|
US20100119979A1
(en)
*
|
2008-11-13 |
2010-05-13 |
Rahman M Dalil |
Antireflective Coating Composition Comprising Fused Aromatic Rings
|
|
US20100136477A1
(en)
*
|
2008-12-01 |
2010-06-03 |
Ng Edward W |
Photosensitive Composition
|
|
EP2216684B1
(en)
|
2009-02-08 |
2015-10-07 |
Rohm and Haas Electronic Materials LLC |
Method of forming a photoresist image comprising an undercoat layer
|
|
EP2216683B1
(en)
|
2009-02-08 |
2018-11-14 |
Rohm and Haas Electronic Materials, L.L.C. |
Substrates coated with an antireflective composition and a photoresist
|
|
US8084186B2
(en)
*
|
2009-02-10 |
2011-12-27 |
Az Electronic Materials Usa Corp. |
Hardmask process for forming a reverse tone image using polysilazane
|
|
US20100203450A1
(en)
|
2009-02-11 |
2010-08-12 |
International Business Machines Corporation |
Photoresist compositions and methods of use
|
|
JP5537920B2
(ja)
|
2009-03-26 |
2014-07-02 |
富士フイルム株式会社 |
感活性光線性又は感放射線性樹脂組成物、これを用いたレジスト膜、及び、パターン形成方法
|
|
WO2010117102A1
(ko)
|
2009-04-09 |
2010-10-14 |
서강대학교 산학협력단 |
콜로이드 입자들을 단결정들로 정렬하는 방법
|
|
US8501383B2
(en)
|
2009-05-20 |
2013-08-06 |
Rohm And Haas Electronic Materials Llc |
Coating compositions for use with an overcoated photoresist
|
|
US9244352B2
(en)
|
2009-05-20 |
2016-01-26 |
Rohm And Haas Electronic Materials, Llc |
Coating compositions for use with an overcoated photoresist
|
|
US20100316949A1
(en)
*
|
2009-06-10 |
2010-12-16 |
Rahman M Dalil |
Spin On Organic Antireflective Coating Composition Comprising Polymer with Fused Aromatic Rings
|
|
US8883407B2
(en)
|
2009-06-12 |
2014-11-11 |
Rohm And Haas Electronic Materials Llc |
Coating compositions suitable for use with an overcoated photoresist
|
|
TWI407252B
(zh)
|
2009-06-22 |
2013-09-01 |
羅門哈斯電子材料有限公司 |
光酸產生劑及包含該光酸產生劑的光阻組成物
|
|
US9057951B2
(en)
|
2009-08-26 |
2015-06-16 |
International Business Machines Corporation |
Chemically amplified photoresist composition and process for its use
|
|
JP5655786B2
(ja)
|
2009-09-11 |
2015-01-21 |
Jsr株式会社 |
感放射線性組成物
|
|
CN105082725B
(zh)
|
2009-09-24 |
2018-05-04 |
富士胶片株式会社 |
平版印刷版原版
|
|
US8632948B2
(en)
*
|
2009-09-30 |
2014-01-21 |
Az Electronic Materials Usa Corp. |
Positive-working photoimageable bottom antireflective coating
|
|
US8551686B2
(en)
*
|
2009-10-30 |
2013-10-08 |
Az Electronic Materials Usa Corp. |
Antireflective composition for photoresists
|
|
CN102225924B
(zh)
|
2009-12-10 |
2015-04-01 |
罗门哈斯电子材料有限公司 |
光酸发生剂和包含该光酸发生剂的光致抗蚀剂
|
|
CN102212100A
(zh)
|
2009-12-10 |
2011-10-12 |
罗门哈斯电子材料有限公司 |
胆酸酯光酸发生剂和包含该发生剂的光致抗蚀剂
|
|
CN104130172B
(zh)
|
2009-12-14 |
2016-05-18 |
罗门哈斯电子材料有限公司 |
磺酰光酸产生剂和包含该磺酰光酸产生剂的光刻胶
|
|
TWI477911B
(zh)
|
2009-12-15 |
2015-03-21 |
羅門哈斯電子材料有限公司 |
光阻劑及其使用方法
|
|
TWI468865B
(zh)
|
2009-12-15 |
2015-01-11 |
羅門哈斯電子材料有限公司 |
光阻劑及其使用方法
|
|
EP2336829B1
(en)
|
2009-12-15 |
2019-01-23 |
Rohm and Haas Electronic Materials LLC |
Photoresists and methods for use thereof
|
|
US8623458B2
(en)
|
2009-12-18 |
2014-01-07 |
International Business Machines Corporation |
Methods of directed self-assembly, and layered structures formed therefrom
|
|
US8821978B2
(en)
|
2009-12-18 |
2014-09-02 |
International Business Machines Corporation |
Methods of directed self-assembly and layered structures formed therefrom
|
|
KR101753433B1
(ko)
|
2009-12-22 |
2017-07-03 |
제이에스알 가부시끼가이샤 |
감방사선성 조성물
|
|
US8486609B2
(en)
*
|
2009-12-23 |
2013-07-16 |
Az Electronic Materials Usa Corp. |
Antireflective coating composition and process thereof
|
|
WO2011083872A1
(en)
*
|
2010-01-08 |
2011-07-14 |
Fujifilm Corporation |
Pattern forming method, actinic ray-sensitive or radiation-sensitive resin composition and resist film
|
|
CN104698749B
(zh)
|
2010-01-25 |
2019-11-19 |
罗门哈斯电子材料有限公司 |
包含含氮化合物的光致抗蚀剂
|
|
US8507192B2
(en)
|
2010-02-18 |
2013-08-13 |
Az Electronic Materials Usa Corp. |
Antireflective compositions and methods of using same
|
|
US9223209B2
(en)
|
2010-02-19 |
2015-12-29 |
International Business Machines Corporation |
Sulfonamide-containing photoresist compositions and methods of use
|
|
JP5969171B2
(ja)
|
2010-03-31 |
2016-08-17 |
ローム アンド ハース エレクトロニック マテリアルズ エルエルシーＲｏｈｍ ａｎｄ Ｈａａｓ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ ＬＬＣ |
光酸発生剤およびこれを含むフォトレジスト
|
|
EP2383611A3
(en)
|
2010-04-27 |
2012-01-25 |
Rohm and Haas Electronic Materials LLC |
Photoacid generators and photoresists comprising same
|
|
US9040221B2
(en)
|
2010-05-20 |
2015-05-26 |
Jsr Corporation |
Radiation-sensitive resin composition, method for forming resist pattern, and polymer and compound
|
|
US8445181B2
(en)
|
2010-06-03 |
2013-05-21 |
Az Electronic Materials Usa Corp. |
Antireflective coating composition and process thereof
|
|
US8852848B2
(en)
|
2010-07-28 |
2014-10-07 |
Z Electronic Materials USA Corp. |
Composition for coating over a photoresist pattern
|
|
JP5664652B2
(ja)
|
2010-08-17 |
2015-02-04 |
Jsr株式会社 |
感放射線性組成物
|
|
JP5729114B2
(ja)
|
2010-08-19 |
2015-06-03 |
Jsr株式会社 |
感放射線性樹脂組成物、パターン形成方法、重合体及び化合物
|
|
KR101881600B1
(ko)
|
2010-08-19 |
2018-07-24 |
제이에스알 가부시끼가이샤 |
감방사선성 수지 조성물, 패턴 형성 방법, 중합체 및 화합물
|
|
WO2012060827A1
(en)
|
2010-11-03 |
2012-05-10 |
Empire Technology Development Llc |
Lithography using photoresist with photoinitiator and photoinhibitor
|
|
US20120122029A1
(en)
|
2010-11-11 |
2012-05-17 |
Takanori Kudo |
Underlayer Developable Coating Compositions and Processes Thereof
|
|
JP5754444B2
(ja)
|
2010-11-26 |
2015-07-29 |
Jsr株式会社 |
感放射線性組成物
|
|
JP5690703B2
(ja)
*
|
2010-11-30 |
2015-03-25 |
富士フイルム株式会社 |
ネガ型パターン形成方法及びレジストパターン
|
|
WO2012090959A1
(ja)
|
2010-12-28 |
2012-07-05 |
Jsr株式会社 |
感放射線性樹脂組成物及び化合物
|
|
EP2472327A1
(en)
|
2010-12-30 |
2012-07-04 |
Rohm and Haas Electronic Materials LLC |
Photoresists and methods for use thereof
|
|
EP2472329B1
(en)
|
2010-12-31 |
2013-06-05 |
Rohm and Haas Electronic Materials LLC |
Coating compositions for use with an overcoated photoresist
|
|
EP2472328B1
(en)
|
2010-12-31 |
2013-06-19 |
Rohm and Haas Electronic Materials LLC |
Coating compositions for use with an overcoated photoresist
|
|
CA2826443A1
(en)
|
2011-02-02 |
2012-08-09 |
3M Innovative Properties Company |
Nozzle and method of making same
|
|
KR20140007833A
(ko)
|
2011-02-04 |
2014-01-20 |
제이에스알 가부시끼가이샤 |
포토레지스트 조성물
|
|
US8465902B2
(en)
|
2011-02-08 |
2013-06-18 |
Az Electronic Materials Usa Corp. |
Underlayer coating composition and processes thereof
|
|
JP5386527B2
(ja)
*
|
2011-02-18 |
2014-01-15 |
富士フイルム株式会社 |
パターン形成方法、感活性光線性又は感放射線性樹脂組成物、及びレジスト膜
|
|
US8906590B2
(en)
|
2011-03-30 |
2014-12-09 |
Az Electronic Materials Usa Corp. |
Antireflective coating composition and process thereof
|
|
JP5786426B2
(ja)
|
2011-04-11 |
2015-09-30 |
Jsr株式会社 |
フォトレジスト組成物、レジストパターン形成方法
|
|
US9599895B2
(en)
|
2011-04-12 |
2017-03-21 |
Empire Technology Development Llc |
Lithography using photoresist with photoinitiator and photoinhibitor
|
|
JP5772717B2
(ja)
*
|
2011-05-30 |
2015-09-02 |
信越化学工業株式会社 |
パターン形成方法
|
|
US8623589B2
(en)
|
2011-06-06 |
2014-01-07 |
Az Electronic Materials Usa Corp. |
Bottom antireflective coating compositions and processes thereof
|
|
JP5995963B2
(ja)
|
2011-06-08 |
2016-09-21 |
スリーエム イノベイティブ プロパティズ カンパニー |
ポリマー連結ナノ粒子を含有するフォトレジスト
|
|
US8568958B2
(en)
|
2011-06-21 |
2013-10-29 |
Az Electronic Materials Usa Corp. |
Underlayer composition and process thereof
|
|
JP5889568B2
(ja)
|
2011-08-11 |
2016-03-22 |
メルク、パテント、ゲゼルシャフト、ミット、ベシュレンクテル、ハフツングＭｅｒｃｋ Ｐａｔｅｎｔ ＧｍｂＨ |
酸化タングステン膜形成用組成物およびそれを用いた酸化タングステン膜の製造法
|
|
WO2013024756A1
(ja)
|
2011-08-16 |
2013-02-21 |
Jsr株式会社 |
フォトレジスト組成物
|
|
JP2013225094A
(ja)
|
2011-10-07 |
2013-10-31 |
Jsr Corp |
フォトレジスト組成物及びレジストパターン形成方法
|
|
US20130105440A1
(en)
|
2011-11-01 |
2013-05-02 |
Az Electronic Materials Usa Corp. |
Nanocomposite negative photosensitive composition and use thereof
|
|
US20130108956A1
(en)
|
2011-11-01 |
2013-05-02 |
Az Electronic Materials Usa Corp. |
Nanocomposite positive photosensitive composition and use thereof
|
|
US9962430B2
(en)
|
2012-02-15 |
2018-05-08 |
Chirhoclin, Inc. |
Methods for treating pain associated with chronic pancreatitis
|
|
US8968586B2
(en)
|
2012-02-15 |
2015-03-03 |
Jsr Corporation |
Pattern-forming method
|
|
US11635688B2
(en)
|
2012-03-08 |
2023-04-25 |
Kayaku Advanced Materials, Inc. |
Photoimageable compositions and processes for fabrication of relief patterns on low surface energy substrates
|
|
JP6123793B2
(ja)
|
2012-03-19 |
2017-05-10 |
Jsr株式会社 |
レジストパターン形成方法及びフォトレジスト組成物
|
|
WO2013140969A1
(ja)
|
2012-03-19 |
2013-09-26 |
Jsr株式会社 |
フォトレジスト組成物、化合物及びその製造方法
|
|
JP5490168B2
(ja)
|
2012-03-23 |
2014-05-14 |
富士フイルム株式会社 |
平版印刷版原版及び平版印刷版の作製方法
|
|
JP5512730B2
(ja)
|
2012-03-30 |
2014-06-04 |
富士フイルム株式会社 |
平版印刷版の作製方法
|
|
JP6019677B2
(ja)
|
2012-04-02 |
2016-11-02 |
Jsr株式会社 |
フォトレジスト組成物及びレジストパターン形成方法
|
|
US8846295B2
(en)
|
2012-04-27 |
2014-09-30 |
International Business Machines Corporation |
Photoresist composition containing a protected hydroxyl group for negative development and pattern forming method using thereof
|
|
US11406718B2
(en)
|
2012-05-29 |
2022-08-09 |
Chirhoclin, Inc. |
Methods of detecting pancreobiliary ductal leaks
|
|
US9170494B2
(en)
|
2012-06-19 |
2015-10-27 |
Az Electronic Materials (Luxembourg) S.A.R.L. |
Antireflective compositions and methods of using same
|
|
US8906592B2
(en)
|
2012-08-01 |
2014-12-09 |
Az Electronic Materials (Luxembourg) S.A.R.L. |
Antireflective coating composition and process thereof
|
|
JP5764589B2
(ja)
|
2012-10-31 |
2015-08-19 |
富士フイルム株式会社 |
化学増幅型レジスト膜のパターニング用有機系処理液の収容容器、並びに、これらを使用したパターン形成方法及び電子デバイスの製造方法
|
|
JP5982442B2
(ja)
*
|
2012-10-31 |
2016-08-31 |
富士フイルム株式会社 |
化学増幅型レジスト膜のパターニング用有機系処理液、並びに、これを使用したパターン形成方法、及び、電子デバイスの製造方法
|
|
US9315636B2
(en)
|
2012-12-07 |
2016-04-19 |
Az Electronic Materials (Luxembourg) S.A.R.L. |
Stable metal compounds, their compositions and methods
|
|
US20150060113A1
(en)
|
2013-01-22 |
2015-03-05 |
Yongcai Wang |
Photocurable composition, article, and method of use
|
|
US9017934B2
(en)
|
2013-03-08 |
2015-04-28 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Photoresist defect reduction system and method
|
|
US9110376B2
(en)
|
2013-03-12 |
2015-08-18 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Photoresist system and method
|
|
US9256128B2
(en)
|
2013-03-12 |
2016-02-09 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Method for manufacturing semiconductor device
|
|
US9354521B2
(en)
|
2013-03-12 |
2016-05-31 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Photoresist system and method
|
|
US9245751B2
(en)
|
2013-03-12 |
2016-01-26 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Anti-reflective layer and method
|
|
US9502231B2
(en)
|
2013-03-12 |
2016-11-22 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Photoresist layer and method
|
|
US9175173B2
(en)
|
2013-03-12 |
2015-11-03 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Unlocking layer and method
|
|
US8932799B2
(en)
|
2013-03-12 |
2015-01-13 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Photoresist system and method
|
|
US9543147B2
(en)
|
2013-03-12 |
2017-01-10 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Photoresist and method of manufacture
|
|
US9117881B2
(en)
|
2013-03-15 |
2015-08-25 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Conductive line system and process
|
|
JPWO2014171429A1
(ja)
|
2013-04-17 |
2017-02-23 |
Jsr株式会社 |
半導体素子の製造方法及びイオン注入方法
|
|
US9291909B2
(en)
|
2013-05-17 |
2016-03-22 |
Az Electronic Materials (Luxembourg) S.A.R.L. |
Composition comprising a polymeric thermal acid generator and processes thereof
|
|
US9152051B2
(en)
|
2013-06-13 |
2015-10-06 |
Az Electronics Materials (Luxembourg) S.A.R.L. |
Antireflective coating composition and process thereof
|
|
US9201305B2
(en)
|
2013-06-28 |
2015-12-01 |
Az Electronic Materials (Luxembourg) S.A.R.L. |
Spin-on compositions of soluble metal oxide carboxylates and methods of their use
|
|
JP6292059B2
(ja)
|
2013-08-13 |
2018-03-14 |
Jsr株式会社 |
基板の加工方法
|
|
US9341945B2
(en)
|
2013-08-22 |
2016-05-17 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Photoresist and method of formation and use
|
|
US9296922B2
(en)
|
2013-08-30 |
2016-03-29 |
Az Electronic Materials (Luxembourg) S.A.R.L. |
Stable metal compounds as hardmasks and filling materials, their compositions and methods of use
|
|
US20150110867A1
(en)
|
2013-10-23 |
2015-04-23 |
Lawrence Livermore National Security, Llc |
Techniques for release of material into an environment
|
|
US9005854B1
(en)
|
2013-11-05 |
2015-04-14 |
Eastman Kodak Company |
Electroless plating method using halide
|
|
US9023560B1
(en)
|
2013-11-05 |
2015-05-05 |
Eastman Kodak Company |
Electroless plating method using non-reducing agent
|
|
US9122161B2
(en)
|
2013-11-05 |
2015-09-01 |
Eastman Kodak Company |
Electroless plating method using bleaching
|
|
US8936890B1
(en)
|
2013-11-05 |
2015-01-20 |
Eastman Kodak Company |
Electroless plating method
|
|
US9128378B2
(en)
|
2013-11-05 |
2015-09-08 |
Eastman Kodak Company |
Forming conductive metal patterns with reactive polymers
|
|
US10036953B2
(en)
|
2013-11-08 |
2018-07-31 |
Taiwan Semiconductor Manufacturing Company |
Photoresist system and method
|
|
US9155201B2
(en)
|
2013-12-03 |
2015-10-06 |
Eastman Kodak Company |
Preparation of articles with conductive micro-wire pattern
|
|
US10095113B2
(en)
|
2013-12-06 |
2018-10-09 |
Taiwan Semiconductor Manufacturing Company |
Photoresist and method
|
|
US9761449B2
(en)
|
2013-12-30 |
2017-09-12 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Gap filling materials and methods
|
|
US9418836B2
(en)
|
2014-01-14 |
2016-08-16 |
Az Electronic Materials (Luxembourg) S.A.R.L. |
Polyoxometalate and heteropolyoxometalate compositions and methods for their use
|
|
US9409793B2
(en)
|
2014-01-14 |
2016-08-09 |
Az Electronic Materials (Luxembourg) S.A.R.L. |
Spin coatable metallic hard mask compositions and processes thereof
|
|
US9599896B2
(en)
|
2014-03-14 |
2017-03-21 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Photoresist system and method
|
|
US9274426B2
(en)
|
2014-04-29 |
2016-03-01 |
Az Electronic Materials (Luxembourg) S.A.R.L. |
Antireflective coating compositions and processes thereof
|
|
US9581908B2
(en)
|
2014-05-16 |
2017-02-28 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Photoresist and method
|
|
JP6405772B2
(ja)
*
|
2014-07-31 |
2018-10-17 |
住友化学株式会社 |
組成物およびそれを用いた有機薄膜トランジスタ
|
|
US9499698B2
(en)
|
2015-02-11 |
2016-11-22 |
Az Electronic Materials (Luxembourg)S.A.R.L. |
Metal hardmask composition and processes for forming fine patterns on semiconductor substrates
|
|
US10241409B2
(en)
|
2015-12-22 |
2019-03-26 |
AZ Electronic Materials (Luxembourg) S.à.r.l. |
Materials containing metal oxides, processes for making same, and processes for using same
|
|
TWI786656B
(zh)
|
2016-12-21 |
2022-12-11 |
德商馬克專利公司 |
在矽基板上塗佈硬遮罩組合物之方法
|
|
WO2019048393A1
(en)
|
2017-09-06 |
2019-03-14 |
AZ Electronic Materials (Luxembourg) S.à.r.l. |
AN INORGANIC OXIDE-CONTAINING VINYL DEPOSITION COMPOSITION USEFUL AS HARD MASKS AND FILLING MATERIALS HAVING ENHANCED THERMAL STABILITY
|
|
CN112969965A
(zh)
|
2018-07-19 |
2021-06-15 |
林特弗德有限公司 |
噻吨酮衍生物、包含其的组合物和包含所述组合物的图案形成方法
|
|
GB202000736D0
(en)
|
2020-01-17 |
2020-03-04 |
Lintfield Ltd |
Modified thioxanthone photoinitators
|
|
US11744878B2
(en)
|
2020-08-19 |
2023-09-05 |
Chirhoclin, Inc. |
Methods for treatment of COVID-19 syndrome
|
|
KR20240004768A
(ko)
|
2021-05-06 |
2024-01-11 |
메르크 파텐트 게엠베하 |
스핀 온 금속 유기 제제
|
