WO2009020029A1 - 感放射線性樹脂組成物 - Google Patents

感放射線性樹脂組成物 Download PDF

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Publication number
WO2009020029A1
WO2009020029A1 PCT/JP2008/063702 JP2008063702W WO2009020029A1 WO 2009020029 A1 WO2009020029 A1 WO 2009020029A1 JP 2008063702 W JP2008063702 W JP 2008063702W WO 2009020029 A1 WO2009020029 A1 WO 2009020029A1
Authority
WO
WIPO (PCT)
Prior art keywords
resin composition
acid
radiosensitive
excels
substituent
Prior art date
Application number
PCT/JP2008/063702
Other languages
English (en)
French (fr)
Inventor
Noboru Ootsuka
Takanori Kawakami
Yukio Nishimura
Makoto Sugiura
Original Assignee
Jsr Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jsr Corporation filed Critical Jsr Corporation
Priority to JP2009526410A priority Critical patent/JP5051232B2/ja
Priority to CN2008801018698A priority patent/CN101772735B/zh
Publication of WO2009020029A1 publication Critical patent/WO2009020029A1/ja
Priority to US12/701,592 priority patent/US8802348B2/en

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10—Esters
    • C08F220/12—Esters of monohydric alcohols or phenols
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0277—Electrolithographic processes

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Medicinal Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Materials For Photolithography (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)

Abstract

　本発明の目的は、レジストとしての基本物性に優れるとともに、コンタクトホールパターンを形成する際における円形性及びＣＤ　Ｕｎｉｆｏｒｍｉｔｙに優れる感放射線性樹脂組成物を提供することである。本感放射線性樹脂組成物は、酸の作用によりアルカリ可溶性となる酸解離性基含有樹脂（Ａ）と、酸発生剤（Ｂ）と、溶剤（Ｃ）とを含有する感放射線性樹脂組成物であって、前記樹脂（Ａ）は、下記一般式（１）及び（２）で表される各繰り返し単位を含むものである。 〔Ｒ１及びＲ２は、各々、水素原子又は炭素数１～４の置換基を有してもよいアルキル基、Ｒ３は炭素数１～４の置換基を有してもよいアルキル基、Ｘは水素原子、ヒドロキシル基又はアシル基を示し、ｍは１～１８の整数、ｎは４～８の整数である。〕
PCT/JP2008/063702 2007-08-09 2008-07-30 感放射線性樹脂組成物 WO2009020029A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2009526410A JP5051232B2 (ja) 2007-08-09 2008-07-30 感放射線性樹脂組成物及びパターン形成方法
CN2008801018698A CN101772735B (zh) 2007-08-09 2008-07-30 放射线敏感性树脂组合物
US12/701,592 US8802348B2 (en) 2007-08-09 2010-02-07 Radiation-sensitive resin composition

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007208631 2007-08-09
JP2007-208631 2007-08-09

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US12/701,592 Continuation US8802348B2 (en) 2007-08-09 2010-02-07 Radiation-sensitive resin composition

Publications (1)

Publication Number Publication Date
WO2009020029A1 true WO2009020029A1 (ja) 2009-02-12

Family

ID=40341263

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/063702 WO2009020029A1 (ja) 2007-08-09 2008-07-30 感放射線性樹脂組成物

Country Status (6)

Country Link
US (1) US8802348B2 (ja)
JP (1) JP5051232B2 (ja)
KR (1) KR101585274B1 (ja)
CN (1) CN101772735B (ja)
TW (1) TWI493289B (ja)
WO (1) WO2009020029A1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009276607A (ja) * 2008-05-15 2009-11-26 Tokyo Ohka Kogyo Co Ltd ポジ型レジスト組成物、レジストパターン形成方法および高分子化合物

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011125685A1 (ja) * 2010-03-31 2011-10-13 Jsr株式会社 感放射線性樹脂組成物
JP5666408B2 (ja) * 2011-01-28 2015-02-12 信越化学工業株式会社 レジスト組成物、及びこれを用いたパターン形成方法
KR101977886B1 (ko) * 2018-06-18 2019-05-13 영창케미칼 주식회사 패턴 프로파일 개선용 화학증폭형 포지티브 포토레지스트 조성물

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10133377A (ja) * 1996-10-30 1998-05-22 Fujitsu Ltd レジスト組成物、レジストパターンの形成方法及び半導体装置の製造方法
JP2000026446A (ja) * 1998-07-03 2000-01-25 Nec Corp ラクトン構造を有する（メタ）アクリレート誘導体、重合体、フォトレジスト組成物、及びパターン形成方法
JP2003345025A (ja) * 2002-05-28 2003-12-03 Everlight Usa Inc 化学増幅型ホトレジスト組成物
JP2004176049A (ja) * 2002-11-05 2004-06-24 Jsr Corp アクリル系共重合体および感放射線性樹脂組成物
JP2004210910A (ja) * 2002-12-27 2004-07-29 Jsr Corp （メタ）アクリル系重合体および感放射線性樹脂組成物

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US4491628A (en) 1982-08-23 1985-01-01 International Business Machines Corporation Positive- and negative-working resist compositions with acid generating photoinitiator and polymer with acid labile groups pendant from polymer backbone
JPH0612452B2 (ja) 1982-09-30 1994-02-16 ブリュ−ワ−・サイエンス・インコ−ポレイテッド 集積回路素子の製造方法
JP2648805B2 (ja) 1990-04-24 1997-09-03 インターナショナル・ビジネス・マシーンズ・コーポレイション 液体適用型の水性処理可能なホトレジスト組成物
JP3568599B2 (ja) 1993-12-28 2004-09-22 富士通株式会社 放射線感光材料及びパターン形成方法
KR100592010B1 (ko) * 2000-02-16 2006-06-22 신에쓰 가가꾸 고교 가부시끼가이샤 고분자 화합물, 화학 증폭 레지스트 재료 및 패턴 형성 방법
JP4441104B2 (ja) * 2000-11-27 2010-03-31 東京応化工業株式会社 ポジ型レジスト組成物
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JP4222850B2 (ja) * 2003-02-10 2009-02-12 Ｓｐａｎｓｉｏｎ Ｊａｐａｎ株式会社 感放射線性樹脂組成物、その製造法並びにそれを用いた半導体装置の製造方法
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EP1742108B1 (en) * 2005-07-05 2015-10-28 Rohm and Haas Electronic Materials, L.L.C. Coating compositions for use with an overcoated photoresist
JP4574507B2 (ja) * 2005-09-28 2010-11-04 東京応化工業株式会社 ポジ型レジスト組成物およびレジストパターン形成方法
KR100734672B1 (ko) 2005-12-28 2007-07-02 동부일렉트로닉스 주식회사 이머젼 리소그래피의 패턴형성방법
JPWO2008087840A1 (ja) * 2007-01-19 2010-05-06 Jsr株式会社 液浸露光用感放射線性樹脂組成物及びフォトレジストパターン形成方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10133377A (ja) * 1996-10-30 1998-05-22 Fujitsu Ltd レジスト組成物、レジストパターンの形成方法及び半導体装置の製造方法
JP2000026446A (ja) * 1998-07-03 2000-01-25 Nec Corp ラクトン構造を有する（メタ）アクリレート誘導体、重合体、フォトレジスト組成物、及びパターン形成方法
JP2003345025A (ja) * 2002-05-28 2003-12-03 Everlight Usa Inc 化学増幅型ホトレジスト組成物
JP2004176049A (ja) * 2002-11-05 2004-06-24 Jsr Corp アクリル系共重合体および感放射線性樹脂組成物
JP2004210910A (ja) * 2002-12-27 2004-07-29 Jsr Corp （メタ）アクリル系重合体および感放射線性樹脂組成物

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009276607A (ja) * 2008-05-15 2009-11-26 Tokyo Ohka Kogyo Co Ltd ポジ型レジスト組成物、レジストパターン形成方法および高分子化合物

Also Published As

Publication number Publication date
JPWO2009020029A1 (ja) 2010-11-04
TWI493289B (zh) 2015-07-21
JP5051232B2 (ja) 2012-10-17
US8802348B2 (en) 2014-08-12
US20100203447A1 (en) 2010-08-12
TW200912543A (en) 2009-03-16
CN101772735A (zh) 2010-07-07
CN101772735B (zh) 2012-09-26
KR20100039881A (ko) 2010-04-16
KR101585274B1 (ko) 2016-01-13

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