ES2090218T3 - Generacion estructural fotolitografica. - Google Patents
Generacion estructural fotolitografica.Info
- Publication number
- ES2090218T3 ES2090218T3 ES91121088T ES91121088T ES2090218T3 ES 2090218 T3 ES2090218 T3 ES 2090218T3 ES 91121088 T ES91121088 T ES 91121088T ES 91121088 T ES91121088 T ES 91121088T ES 2090218 T3 ES2090218 T3 ES 2090218T3
- Authority
- ES
- Spain
- Prior art keywords
- exposed
- photolithographic
- photoresistent
- temperature treatment
- carbonic acid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- BVKZGUZCCUSVTD-UHFFFAOYSA-N carbonic acid Chemical compound OC(O)=O BVKZGUZCCUSVTD-UHFFFAOYSA-N 0.000 abstract 2
- 239000002253 acid Substances 0.000 abstract 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract 1
- 239000007788 liquid Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 229910052760 oxygen Inorganic materials 0.000 abstract 1
- 239000001301 oxygen Substances 0.000 abstract 1
- 229920000642 polymer Polymers 0.000 abstract 1
- 239000002904 solvent Substances 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/265—Selective reaction with inorganic or organometallic reagents after image-wise exposure, e.g. silylation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/147—Lenticular
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/167—X-ray
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Inorganic Chemistry (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Materials For Photolithography (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
UN PROCEDIMIENTO PARA LA GENERACION DE UNA ESTRUCTURA FOTOLITOGRAFICA EN EL CAMPO SUBMICRON ESTA CARACTERIZADO POR LOS SIGUIENTES PASOS: TENTE DE UN POLIMERO QUE CONTIENE UN GRUPOBUTILESTER DE UN ANHIDRIDO DE ACIDO CARBONICO Y UN ACIDO CARBONICO TERCIARIO, DE UN FOTOINICIADOR LIBERADO POR LA EXPOSICION DE UN ACIDO Y DE UN DISOLVENTE APROPIADO; APA FOTORESISTENTE SE EXPONE EN CUADROS; EXPUESTA SE EXPONE A UN TRATAMIENTO DE TEMPERATURA; FOTORESISTENTE ASI TRATADA SE SOMETE A UNA SILILIZACION DE LIQUIDO; UN PLASMA DE OXIGENO ANISOTROPO; EL TRATAMIENTO DE TEMPERATURA SE LLEVARA A CABO DE TAL MANERA QUE LA FOTORESISTENCIA SE VUELVE HIDROFILA EN LAS ZONAS EXPUESTAS.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE4041002 | 1990-12-20 |
Publications (1)
Publication Number | Publication Date |
---|---|
ES2090218T3 true ES2090218T3 (es) | 1996-10-16 |
Family
ID=6420922
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
ES91121088T Expired - Lifetime ES2090218T3 (es) | 1990-12-20 | 1991-12-09 | Generacion estructural fotolitografica. |
Country Status (5)
Country | Link |
---|---|
US (1) | US5384220A (es) |
EP (1) | EP0492256B1 (es) |
JP (1) | JP3290195B2 (es) |
DE (1) | DE59108083D1 (es) |
ES (1) | ES2090218T3 (es) |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
ES2090217T3 (es) * | 1990-12-20 | 1996-10-16 | Siemens Ag | Laca fotosensible. |
DE4226464B4 (de) * | 1992-08-10 | 2005-06-02 | Infineon Technologies Ag | Positivresist |
US5550007A (en) * | 1993-05-28 | 1996-08-27 | Lucent Technologies Inc. | Surface-imaging technique for lithographic processes for device fabrication |
EP0760971B1 (de) * | 1994-05-25 | 1999-08-04 | Siemens Aktiengesellschaft | Trockenentwickelbarer positivresist |
KR0174316B1 (ko) * | 1994-07-05 | 1999-04-01 | 모리시다 요이치 | 미세패턴 형성방법 |
JPH09230606A (ja) * | 1994-07-05 | 1997-09-05 | Matsushita Electric Ind Co Ltd | 微細パターン形成方法 |
EP0797792B1 (de) * | 1994-09-12 | 1998-11-18 | Siemens Aktiengesellschaft | Photolithographische strukturerzeugung |
US5707783A (en) * | 1995-12-04 | 1998-01-13 | Complex Fluid Systems, Inc. | Mixtures of mono- and DI- or polyfunctional silanes as silylating agents for top surface imaging |
DE69712654T2 (de) * | 1996-02-22 | 2002-09-05 | Seiko Epson Corp | Tintenstrahlaufzeichnungskopf, Tintenstrahlaufzeichnungsgerät damit versehen und Herstellungsverfahren eines Tintenstrahlaufzeichnungskopfes |
KR100192933B1 (ko) * | 1996-06-27 | 1999-06-15 | 김영환 | 미세 감광막 패턴 형성방법 |
US5874200A (en) * | 1996-10-15 | 1999-02-23 | Daewoo Electronics Co., Ltd. | Method for forming a pattern preventing water mark formation |
DE59806493D1 (de) * | 1997-04-23 | 2003-01-16 | Infineon Technologies Ag | Chemisch verstärkter Resist |
US5935762A (en) * | 1997-10-14 | 1999-08-10 | Industrial Technology Research Institute | Two-layered TSI process for dual damascene patterning |
DE59808434D1 (de) | 1997-11-28 | 2003-06-26 | Infineon Technologies Ag | Chemisch verstärkter Resist für die Elektronenstrahllithographie |
US6331378B1 (en) | 1998-02-25 | 2001-12-18 | Matsushita Electric Industrial Co., Ltd. | Pattern forming method |
DE59908549D1 (de) * | 1998-04-24 | 2004-03-25 | Infineon Technologies Ag | Strahlungsempfindliches Gemisch und dessen Verwendung |
US6296989B1 (en) * | 1998-09-11 | 2001-10-02 | National Center for Scientific Research “Demokritos” | Silylation of epoxy-containing photoresist films |
DE10133256B4 (de) * | 2001-07-09 | 2007-07-05 | Infineon Technologies Ag | Verfahren zur Herstellung von leitfähigen oder halbleitenden strukturierten Polymeren |
US20060269879A1 (en) * | 2005-05-24 | 2006-11-30 | Infineon Technologies Ag | Method and apparatus for a post exposure bake of a resist |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5381116A (en) * | 1976-12-25 | 1978-07-18 | Agency Of Ind Science & Technol | Radiation sensitive polymer and its working method |
US4491628A (en) * | 1982-08-23 | 1985-01-01 | International Business Machines Corporation | Positive- and negative-working resist compositions with acid generating photoinitiator and polymer with acid labile groups pendant from polymer backbone |
CA1248402A (en) * | 1983-09-16 | 1989-01-10 | Larry E. Stillwagon | Method of making articles using gas functionalized plasma developed layer |
US4508812A (en) * | 1984-05-03 | 1985-04-02 | Hughes Aircraft Company | Method of applying poly(methacrylic anhydride resist to a semiconductor |
US4552833A (en) * | 1984-05-14 | 1985-11-12 | International Business Machines Corporation | Radiation sensitive and oxygen plasma developable resist |
US4551418A (en) * | 1985-02-19 | 1985-11-05 | International Business Machines Corporation | Process for preparing negative relief images with cationic photopolymerization |
US4613398A (en) * | 1985-06-06 | 1986-09-23 | International Business Machines Corporation | Formation of etch-resistant resists through preferential permeation |
US4657845A (en) * | 1986-01-14 | 1987-04-14 | International Business Machines Corporation | Positive tone oxygen plasma developable photoresist |
US4837124A (en) * | 1986-02-24 | 1989-06-06 | Hoechst Celanese Corporation | High resolution photoresist of imide containing polymers |
GB8611229D0 (en) * | 1986-05-08 | 1986-06-18 | Ucb Sa | Forming positive pattern |
NL8700421A (nl) * | 1987-02-20 | 1988-09-16 | Philips Nv | Werkwijze voor het vervaardigen van een halfgeleiderinrichting. |
JPH01142721A (ja) * | 1987-11-30 | 1989-06-05 | Fujitsu Ltd | ポジ型感光性パターン形成材料およびパターン形成方法 |
US4921778A (en) * | 1988-07-29 | 1990-05-01 | Shipley Company Inc. | Photoresist pattern fabrication employing chemically amplified metalized material |
DE3913434A1 (de) * | 1989-04-24 | 1990-10-25 | Siemens Ag | Trockenwickelbares resistsystem |
-
1991
- 1991-12-09 ES ES91121088T patent/ES2090218T3/es not_active Expired - Lifetime
- 1991-12-09 DE DE59108083T patent/DE59108083D1/de not_active Expired - Fee Related
- 1991-12-09 EP EP91121088A patent/EP0492256B1/de not_active Expired - Lifetime
- 1991-12-18 JP JP35304891A patent/JP3290195B2/ja not_active Expired - Fee Related
- 1991-12-20 US US07/811,706 patent/US5384220A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0492256B1 (de) | 1996-08-14 |
EP0492256A1 (de) | 1992-07-01 |
US5384220A (en) | 1995-01-24 |
JP3290195B2 (ja) | 2002-06-10 |
JPH0511457A (ja) | 1993-01-22 |
DE59108083D1 (de) | 1996-09-19 |
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