ES2090218T3 - Generacion estructural fotolitografica. - Google Patents

Generacion estructural fotolitografica.

Info

Publication number
ES2090218T3
ES2090218T3 ES91121088T ES91121088T ES2090218T3 ES 2090218 T3 ES2090218 T3 ES 2090218T3 ES 91121088 T ES91121088 T ES 91121088T ES 91121088 T ES91121088 T ES 91121088T ES 2090218 T3 ES2090218 T3 ES 2090218T3
Authority
ES
Spain
Prior art keywords
exposed
photolithographic
photoresistent
temperature treatment
carbonic acid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
ES91121088T
Other languages
English (en)
Inventor
Recai Dr Sezi
Horst Dipl-Chem Borndorfer
Rainer Dr Leuschner
Michael Dr Sebald
Siegfried Dr Birkle
Hellmut Dr Ahne
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Siemens Corp
Original Assignee
Siemens AG
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG, Siemens Corp filed Critical Siemens AG
Application granted granted Critical
Publication of ES2090218T3 publication Critical patent/ES2090218T3/es
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/265—Selective reaction with inorganic or organometallic reagents after image-wise exposure, e.g. silylation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/147—Lenticular
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/167—X-ray

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

UN PROCEDIMIENTO PARA LA GENERACION DE UNA ESTRUCTURA FOTOLITOGRAFICA EN EL CAMPO SUBMICRON ESTA CARACTERIZADO POR LOS SIGUIENTES PASOS: TENTE DE UN POLIMERO QUE CONTIENE UN GRUPOBUTILESTER DE UN ANHIDRIDO DE ACIDO CARBONICO Y UN ACIDO CARBONICO TERCIARIO, DE UN FOTOINICIADOR LIBERADO POR LA EXPOSICION DE UN ACIDO Y DE UN DISOLVENTE APROPIADO; APA FOTORESISTENTE SE EXPONE EN CUADROS; EXPUESTA SE EXPONE A UN TRATAMIENTO DE TEMPERATURA; FOTORESISTENTE ASI TRATADA SE SOMETE A UNA SILILIZACION DE LIQUIDO; UN PLASMA DE OXIGENO ANISOTROPO; EL TRATAMIENTO DE TEMPERATURA SE LLEVARA A CABO DE TAL MANERA QUE LA FOTORESISTENCIA SE VUELVE HIDROFILA EN LAS ZONAS EXPUESTAS.
ES91121088T 1990-12-20 1991-12-09 Generacion estructural fotolitografica. Expired - Lifetime ES2090218T3 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE4041002 1990-12-20

Publications (1)

Publication Number Publication Date
ES2090218T3 true ES2090218T3 (es) 1996-10-16

Family

ID=6420922

Family Applications (1)

Application Number Title Priority Date Filing Date
ES91121088T Expired - Lifetime ES2090218T3 (es) 1990-12-20 1991-12-09 Generacion estructural fotolitografica.

Country Status (5)

Country Link
US (1) US5384220A (es)
EP (1) EP0492256B1 (es)
JP (1) JP3290195B2 (es)
DE (1) DE59108083D1 (es)
ES (1) ES2090218T3 (es)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ES2090217T3 (es) * 1990-12-20 1996-10-16 Siemens Ag Laca fotosensible.
DE4226464B4 (de) * 1992-08-10 2005-06-02 Infineon Technologies Ag Positivresist
US5550007A (en) * 1993-05-28 1996-08-27 Lucent Technologies Inc. Surface-imaging technique for lithographic processes for device fabrication
DE59506534D1 (de) * 1994-05-25 1999-09-09 Siemens Ag Trockenentwickelbarer positivresist
JPH09230606A (ja) * 1994-07-05 1997-09-05 Matsushita Electric Ind Co Ltd 微細パターン形成方法
KR0174316B1 (ko) * 1994-07-05 1999-04-01 모리시다 요이치 미세패턴 형성방법
WO1996008750A1 (de) * 1994-09-12 1996-03-21 Siemens Aktiengesellschaft Photolithographische strukturerzeugung
US5707783A (en) * 1995-12-04 1998-01-13 Complex Fluid Systems, Inc. Mixtures of mono- and DI- or polyfunctional silanes as silylating agents for top surface imaging
US6209992B1 (en) * 1996-02-22 2001-04-03 Seiko Epson Corporation Ink-jet recording head, ink-jet recording apparatus using the same, and method for producing ink-jet recording head
KR100192933B1 (ko) * 1996-06-27 1999-06-15 김영환 미세 감광막 패턴 형성방법
US5874200A (en) * 1996-10-15 1999-02-23 Daewoo Electronics Co., Ltd. Method for forming a pattern preventing water mark formation
DE59806493D1 (de) * 1997-04-23 2003-01-16 Infineon Technologies Ag Chemisch verstärkter Resist
US5935762A (en) * 1997-10-14 1999-08-10 Industrial Technology Research Institute Two-layered TSI process for dual damascene patterning
EP0919867B1 (de) 1997-11-28 2003-05-21 Infineon Technologies AG Chemisch verstärkter Resist für die Elektronenstrahllithographie
US6331378B1 (en) 1998-02-25 2001-12-18 Matsushita Electric Industrial Co., Ltd. Pattern forming method
DE59908549D1 (de) * 1998-04-24 2004-03-25 Infineon Technologies Ag Strahlungsempfindliches Gemisch und dessen Verwendung
US6296989B1 (en) * 1998-09-11 2001-10-02 National Center for Scientific Research “Demokritos” Silylation of epoxy-containing photoresist films
DE10133256B4 (de) * 2001-07-09 2007-07-05 Infineon Technologies Ag Verfahren zur Herstellung von leitfähigen oder halbleitenden strukturierten Polymeren
US20060269879A1 (en) * 2005-05-24 2006-11-30 Infineon Technologies Ag Method and apparatus for a post exposure bake of a resist

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5381116A (en) * 1976-12-25 1978-07-18 Agency Of Ind Science & Technol Radiation sensitive polymer and its working method
US4491628A (en) * 1982-08-23 1985-01-01 International Business Machines Corporation Positive- and negative-working resist compositions with acid generating photoinitiator and polymer with acid labile groups pendant from polymer backbone
CA1248402A (en) * 1983-09-16 1989-01-10 Larry E. Stillwagon Method of making articles using gas functionalized plasma developed layer
US4508812A (en) * 1984-05-03 1985-04-02 Hughes Aircraft Company Method of applying poly(methacrylic anhydride resist to a semiconductor
US4552833A (en) * 1984-05-14 1985-11-12 International Business Machines Corporation Radiation sensitive and oxygen plasma developable resist
US4551418A (en) * 1985-02-19 1985-11-05 International Business Machines Corporation Process for preparing negative relief images with cationic photopolymerization
US4613398A (en) * 1985-06-06 1986-09-23 International Business Machines Corporation Formation of etch-resistant resists through preferential permeation
US4657845A (en) * 1986-01-14 1987-04-14 International Business Machines Corporation Positive tone oxygen plasma developable photoresist
US4837124A (en) * 1986-02-24 1989-06-06 Hoechst Celanese Corporation High resolution photoresist of imide containing polymers
GB8611229D0 (en) * 1986-05-08 1986-06-18 Ucb Sa Forming positive pattern
NL8700421A (nl) * 1987-02-20 1988-09-16 Philips Nv Werkwijze voor het vervaardigen van een halfgeleiderinrichting.
JPH01142721A (ja) * 1987-11-30 1989-06-05 Fujitsu Ltd ポジ型感光性パターン形成材料およびパターン形成方法
US4921778A (en) * 1988-07-29 1990-05-01 Shipley Company Inc. Photoresist pattern fabrication employing chemically amplified metalized material
DE3913434A1 (de) * 1989-04-24 1990-10-25 Siemens Ag Trockenwickelbares resistsystem

Also Published As

Publication number Publication date
EP0492256B1 (de) 1996-08-14
EP0492256A1 (de) 1992-07-01
US5384220A (en) 1995-01-24
JP3290195B2 (ja) 2002-06-10
DE59108083D1 (de) 1996-09-19
JPH0511457A (ja) 1993-01-22

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