ES2090217T3 - Laca fotosensible. - Google Patents

Laca fotosensible.

Info

Publication number
ES2090217T3
ES2090217T3 ES91121087T ES91121087T ES2090217T3 ES 2090217 T3 ES2090217 T3 ES 2090217T3 ES 91121087 T ES91121087 T ES 91121087T ES 91121087 T ES91121087 T ES 91121087T ES 2090217 T3 ES2090217 T3 ES 2090217T3
Authority
ES
Spain
Prior art keywords
photosensitive lacquer
lacquer
photosensitive
photoresista
butilester
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
ES91121087T
Other languages
English (en)
Inventor
Recai Dr Sezi
Leuschner Dr Rainer
Horst Dipl-Chem Borndorfer
Michael Dr Sebald
Siegfried Dr Birkle
Hellmut Dr Ahne
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Siemens Corp
Original Assignee
Siemens AG
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG, Siemens Corp filed Critical Siemens AG
Application granted granted Critical
Publication of ES2090217T3 publication Critical patent/ES2090217T3/es
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • G03F7/0758—Macromolecular compounds containing Si-O, Si-C or Si-N bonds with silicon- containing groups in the side chains
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
    • Y10S430/111—Polymer of unsaturated acid or ester

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Dental Preparations (AREA)

Abstract

UNA FOTORESISTA PARA LA GENERACION DE UNA ESTRUCTURA EN EL CAMPO DE LOS SUBMICRONES CONTIENE LOS SIGUIENTES COMPONENTES: RGANICO Y GRUPOS DE ACIDO ORGANICO TERCIARIO-BUTILESTER, FOTOINICIADOR QUE LIBERA UN ACIDO DURANTE LA EXPOSICION, Y
ES91121087T 1990-12-20 1991-12-09 Laca fotosensible. Expired - Lifetime ES2090217T3 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE4041001 1990-12-20

Publications (1)

Publication Number Publication Date
ES2090217T3 true ES2090217T3 (es) 1996-10-16

Family

ID=6420921

Family Applications (1)

Application Number Title Priority Date Filing Date
ES91121087T Expired - Lifetime ES2090217T3 (es) 1990-12-20 1991-12-09 Laca fotosensible.

Country Status (5)

Country Link
US (1) US6110637A (es)
EP (1) EP0494383B1 (es)
JP (1) JP3290194B2 (es)
DE (1) DE59108086D1 (es)
ES (1) ES2090217T3 (es)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE59504286D1 (de) * 1994-09-12 1998-12-24 Siemens Ag Photolithographische strukturerzeugung
GB9520950D0 (en) * 1995-10-13 1995-12-13 Martinex R & D Inc Water-processable chemically amplified resist
DE59806493D1 (de) * 1997-04-23 2003-01-16 Infineon Technologies Ag Chemisch verstärkter Resist
DE59908549D1 (de) * 1998-04-24 2004-03-25 Infineon Technologies Ag Strahlungsempfindliches Gemisch und dessen Verwendung
EP0952166B1 (de) 1998-04-24 2003-06-25 Infineon Technologies AG Filmbildende Polymere
HK1048888A1 (zh) * 1999-09-10 2003-04-17 Oerlikon Usa Inc. 磁极制备的方法和设备
TW564331B (en) 1999-10-28 2003-12-01 Fuji Photo Film Co Ltd Positive-form photoresist composition
US6547975B1 (en) 1999-10-29 2003-04-15 Unaxis Usa Inc. Magnetic pole fabrication process and device
KR100498440B1 (ko) 1999-11-23 2005-07-01 삼성전자주식회사 백본이 환상 구조를 가지는 감광성 폴리머와 이를포함하는 레지스트 조성물
JP4139548B2 (ja) 2000-04-06 2008-08-27 富士フイルム株式会社 ポジ型フォトレジスト組成物
JP2002030116A (ja) 2000-07-14 2002-01-31 Tokyo Ohka Kogyo Co Ltd 新規コポリマー、ホトレジスト組成物、および高アスペクト比のレジストパターン形成方法
JP2002030118A (ja) * 2000-07-14 2002-01-31 Tokyo Ohka Kogyo Co Ltd 新規コポリマー、ホトレジスト組成物、および高アスペクト比のレジストパターン形成方法
US6312870B1 (en) 2000-07-19 2001-11-06 Arch Specialty Chemicals, Inc. t-butyl cinnamate polymers and their use in photoresist compositions
DE10054121B4 (de) * 2000-10-31 2006-06-14 Infineon Technologies Ag Verfahren zur Strukturierung einer Photolackschicht
DE10120660B8 (de) * 2001-04-27 2006-09-28 Infineon Technologies Ag Verfahren zur Strukturierung einer Photolackschicht
US7066977B2 (en) * 2001-05-02 2006-06-27 Fu-Kuo Huang Flame synthesis and non-vacuum physical evaporation
US20030064321A1 (en) * 2001-08-31 2003-04-03 Arch Specialty Chemicals, Inc. Free-acid containing polymers and their use in photoresists
JP2003207896A (ja) 2002-01-16 2003-07-25 Fuji Photo Film Co Ltd ポジ型レジスト組成物
DE10208786B4 (de) * 2002-02-28 2006-02-09 Infineon Technologies Ag Verfahren zur Modifikation von Resiststrukturen und Resistschichten aus wässriger Phase
DE10238024B4 (de) * 2002-08-20 2007-03-08 Infineon Technologies Ag Verfahren zur Integration von Luft als Dielektrikum in Halbleitervorrichtungen
KR100618850B1 (ko) * 2004-07-22 2006-09-01 삼성전자주식회사 반도체 소자 제조용 마스크 패턴 및 그 형성 방법과 미세패턴을 가지는 반도체 소자의 제조 방법
KR100640587B1 (ko) * 2004-09-23 2006-11-01 삼성전자주식회사 반도체 소자 제조용 마스크 패턴 및 그 형성 방법과 미세패턴을 가지는 반도체 소자의 제조 방법
US7790357B2 (en) * 2006-09-12 2010-09-07 Hynix Semiconductor Inc. Method of forming fine pattern of semiconductor device
KR100771330B1 (ko) * 2006-09-28 2007-10-29 삼성전기주식회사 솔더레지스트막 형성방법
US8852848B2 (en) * 2010-07-28 2014-10-07 Z Electronic Materials USA Corp. Composition for coating over a photoresist pattern
US12141837B2 (en) 2021-08-06 2024-11-12 The Nielsen Company (Us), Llc Methods and apparatus to extract information from uniform resource locators

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5381116A (en) * 1976-12-25 1978-07-18 Agency Of Ind Science & Technol Radiation sensitive polymer and its working method
JPS5713444A (en) * 1980-06-27 1982-01-23 Tamura Kaken Kk Photosensitive composition
US4472494A (en) * 1980-09-15 1984-09-18 Napp Systems (Usa), Inc. Bilayer photosensitive imaging article
US4491628A (en) * 1982-08-23 1985-01-01 International Business Machines Corporation Positive- and negative-working resist compositions with acid generating photoinitiator and polymer with acid labile groups pendant from polymer backbone
DE3409888A1 (de) * 1984-03-17 1985-09-19 Hoechst Ag, 6230 Frankfurt Lichtempfindliches aufzeichnungsmaterial und dessen verwendung in einem verfahren zum herstellen einer druckform oder einer gedruckten schaltung
US4508812A (en) * 1984-05-03 1985-04-02 Hughes Aircraft Company Method of applying poly(methacrylic anhydride resist to a semiconductor
US4837124A (en) * 1986-02-24 1989-06-06 Hoechst Celanese Corporation High resolution photoresist of imide containing polymers
US4912018A (en) * 1986-02-24 1990-03-27 Hoechst Celanese Corporation High resolution photoresist based on imide containing polymers
EP0388484B1 (de) * 1989-03-20 1994-09-21 Siemens Aktiengesellschaft Hochauflösender Photoresist
ES2103262T3 (es) * 1989-04-24 1997-09-16 Siemens Ag Procedimiento de fotoestructuracion.
US5120629A (en) * 1990-04-10 1992-06-09 E. I. Du Pont De Nemours And Company Positive-working photosensitive electrostatic master
US5071730A (en) * 1990-04-24 1991-12-10 International Business Machines Corporation Liquid apply, aqueous processable photoresist compositions
ES2090218T3 (es) * 1990-12-20 1996-10-16 Siemens Ag Generacion estructural fotolitografica.

Also Published As

Publication number Publication date
JP3290194B2 (ja) 2002-06-10
EP0494383A1 (de) 1992-07-15
JPH0511450A (ja) 1993-01-22
DE59108086D1 (de) 1996-09-19
EP0494383B1 (de) 1996-08-14
US6110637A (en) 2000-08-29

Similar Documents

Publication Publication Date Title
ES2090217T3 (es) Laca fotosensible.
ES2063036T3 (es) Compuestos (aralquil-sustituido) heterociclicos.
ES2196054T3 (es) Derivados de acido fenilacetico, procedimiento y productos intermedios para su obtencion y agentes que contienen los mismos.
MX9306986A (es) Composiciones farmaceuticas a base de taxoides.
ES2141559T3 (es) Derivados de 2-ciano-1-sulfonamidofenil-1,3-diona y su uso como herbicidas.
ES556439A0 (es) Un procedimiento para generar halogenos a partir de soluciones que contienen halogenuro
ES2186021T3 (es) Mezclas detergentes.
ES2037811T3 (es) Sistema de generadores de codigo ortogonales, radios provistas de un generador de codigo y generadores de codigo de tal sistema.
ATE102043T1 (de) Empfaenglichmachen von saeugetieren fuer beschleunigte gewebereparatur.
ES2059377T3 (es) Pirazoles 1,5-diaril-3-sustituidos farmacologicamente activos y procedimiento para sintetizar los mismos.
AR246253A1 (es) Procedimiento para obtener derivados de dideshidro-vitamina d3.
ES2177642T3 (es) Uso de ciertos derivados de acido metanobisfosfonico para prevenir el desprendimiento y la migracion de protesis.
ES2091217T3 (es) Toner, aparato para la formacion de imagenes, elemento de aparato y aparato facsimil.
ES2134777T3 (es) Nuevos compuestos de sulfonilo.
ES2072946T3 (es) Isomeros (+) de derivados de endoeteno/endoetano-epoximorfinano como agentes antitusivos.
AR247728A1 (es) Procedimiento para separar el isomero activo del cimaterol y procedimiento para preparar las sales diastereoisomeras de dicho isomero
ES2096497T3 (es) Procedimiento para la obtencion de aminoalcoholes opticamente activos.
ES2042913T3 (es) Agente de lavado y de limpieza.
ES2095068T3 (es) Peroxicarbonatos polimericos y procedimiento para prepararlos.
ES2070370T3 (es) 3,3'-ditiobis(acidos propionicos) y sus esteres.
ES2054650T3 (es) Fenilacetonitrilos basicamente substituidos, su obtencion y medicamentos que los contienen.
ES2069915T3 (es) Dicarbonatos y uretanos de los acidos 4,5-dihidroxi- y 4,5,8-trihidroxi-9,10-dihidro-9,10-dioxo-2-antracenocarboxilicos que tienen actividades terapeuticas.
MX9305773A (es) 5-oxo-dibenzo/a,d/ciclohepta-1,4-dienos, procedimiento para su obtencion y medicamentos que los contienen.
IT8467350A1 (it) Dispositivo di connessione per il collegamento di due oggetti, particolarmente per il collegamento di una unita' di visualizzazione ad altre parti di un elaboratore elettronico.
ES2141325T3 (es) Composiciones de vidrio para producir fibras de vidrio de dos componentes.

Legal Events

Date Code Title Description
FG2A Definitive protection

Ref document number: 494383

Country of ref document: ES

FG2A Definitive protection

Ref document number: 494383

Country of ref document: ES