ES2101710T3 - Procedimiento fotolitografico. - Google Patents
Procedimiento fotolitografico.Info
- Publication number
- ES2101710T3 ES2101710T3 ES91121084T ES91121084T ES2101710T3 ES 2101710 T3 ES2101710 T3 ES 2101710T3 ES 91121084 T ES91121084 T ES 91121084T ES 91121084 T ES91121084 T ES 91121084T ES 2101710 T3 ES2101710 T3 ES 2101710T3
- Authority
- ES
- Spain
- Prior art keywords
- photoresistent
- primary
- layer
- field
- procedure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/40—Treatment after imagewise removal, e.g. baking
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/40—Treatment after imagewise removal, e.g. baking
- G03F7/405—Treatment with inorganic or organometallic reagents after imagewise removal
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Organic Chemistry (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Materials For Photolithography (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Investigating Or Analysing Biological Materials (AREA)
- Medicinal Preparation (AREA)
Abstract
UN PROCEDIMIENTO PARA ESTRUCTURACION EN EL CAMPO SUBMICRON ESTA CARACTERIZADO POR LOS SIGUIENTES PASOS: SE REUNE UNA CAPA FOTORESISTENTE DE UN COMPONENTE DE POLIMERO CON GRUPOS FUNCIONALES QUE ESTAN CAPACITADOS PARA UNA REACCION CON AMINAS PRIMARIAS O SECUNDARIAS Y GRUPOS IMIDOS QUE BLOQUEAN EL NITROGENO, DE UN FOTOINICIADOR LIBERADO POR LA EXPOSICION DE UN ACIDO Y DE UN DISOLVENTE APROPIADO; ENTE SE SECA; LA CAPA FOTORESISTENTE EXPUESTA SE SOMETE A UN TRATAMIENTO DE TEMPERATURA ; ESTRUCTURA FOTORESISTENTE; RATA CON UN AGENTE QUIMICO QUE CONTENGA UN AMINO PRIMARIO O SECUNDARIO; EN EL REVELADO SE GRADUA UN NIVEL DE OSCURIDAD DEFINITIVO EN UN CAMPO ENTRE 20 Y 100 NM.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE4040998 | 1990-12-20 |
Publications (1)
Publication Number | Publication Date |
---|---|
ES2101710T3 true ES2101710T3 (es) | 1997-07-16 |
Family
ID=6420918
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
ES91121084T Expired - Lifetime ES2101710T3 (es) | 1990-12-20 | 1991-12-09 | Procedimiento fotolitografico. |
Country Status (5)
Country | Link |
---|---|
US (1) | US5250375A (es) |
EP (1) | EP0492253B1 (es) |
JP (1) | JP3067871B2 (es) |
DE (1) | DE59108680D1 (es) |
ES (1) | ES2101710T3 (es) |
Families Citing this family (37)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5366852A (en) * | 1992-09-21 | 1994-11-22 | Shipley Company, Inc. | Methods for treating photoresists |
FR2716547A1 (fr) * | 1994-02-24 | 1995-08-25 | Fujitsu Ltd | Procédé pour former un motif de résist et pour fabriquer un dispositif à semi-conducteur. |
DE19504434C1 (de) * | 1995-02-10 | 1996-05-15 | Siemens Ag | Verfahren zur Herstellung siliziumhaltiger Masken |
US6057084A (en) * | 1997-10-03 | 2000-05-02 | Fusion Systems Corporation | Controlled amine poisoning for reduced shrinkage of features formed in photoresist |
TW449799B (en) * | 1998-03-09 | 2001-08-11 | Mitsubishi Electric Corp | Method of manufacturing a semiconductor device having a fine pattern, and semiconductor device manufactured thereby |
EP0957399B1 (de) * | 1998-04-24 | 2004-02-18 | Infineon Technologies AG | Strahlungsempfindliches Gemisch und dessen Verwendung |
EP1045291A3 (en) * | 1999-02-17 | 2001-01-10 | Infineon Technologies North America Corp. | Method of improving the etch resistance of photoresists |
TW439119B (en) * | 2000-03-04 | 2001-06-07 | United Microelectronics Corp | Method for forming photoresist pattern |
JP2002030116A (ja) | 2000-07-14 | 2002-01-31 | Tokyo Ohka Kogyo Co Ltd | 新規コポリマー、ホトレジスト組成物、および高アスペクト比のレジストパターン形成方法 |
JP2002030118A (ja) * | 2000-07-14 | 2002-01-31 | Tokyo Ohka Kogyo Co Ltd | 新規コポリマー、ホトレジスト組成物、および高アスペクト比のレジストパターン形成方法 |
US6605519B2 (en) * | 2001-05-02 | 2003-08-12 | Unaxis Usa, Inc. | Method for thin film lift-off processes using lateral extended etching masks and device |
DE10131670A1 (de) | 2001-06-29 | 2003-01-16 | Infineon Technologies Ag | Fotoresists mit Reaktionsankern für eine chemische Nachverstärkung von Resiststrukturen für Belichtungen bei 157 nm |
DE10131667B4 (de) * | 2001-06-29 | 2007-05-31 | Infineon Technologies Ag | Negativ Resistprozess mit simultaner Entwicklung und Silylierung |
DE10142590A1 (de) | 2001-08-31 | 2003-04-03 | Infineon Technologies Ag | Verfahren zur Seitenwandverstärkung von Resiststrukturen und zur Herstellung von Strukturen mit reduzierter Strukturgröße |
DE10142600B4 (de) * | 2001-08-31 | 2007-05-24 | Infineon Technologies Ag | Siliziumhaltiger Resist für die Fotolithografie bei kurzen Belichtungswellenlängen |
DE10147953B4 (de) * | 2001-09-28 | 2007-06-06 | Infineon Technologies Ag | CARL für Bioelektronik: Substratanbindung über isolierende Schicht |
DE10153497B4 (de) * | 2001-10-31 | 2006-04-06 | Infineon Technologies Ag | Verfahren zur Silylierung von Fotoresists im UV-Bereich |
DE10156865A1 (de) * | 2001-11-20 | 2003-05-28 | Infineon Technologies Ag | Verfahren zum Ausbilden einer Struktur in einem Halbleitersubstrat |
DE10208448A1 (de) | 2002-02-27 | 2003-09-11 | Infineon Technologies Ag | Lithografieverfahren zur Verringerung des lateralen Chromstrukturverlustes bei der Fotomaskenherstellung unter Verwendung chemisch verstärkter Resists |
DE10208449A1 (de) | 2002-02-27 | 2003-09-11 | Infineon Technologies Ag | Verfahren zur Erhöhung der Ätzresistenz und zur Verkleinerung der Loch- oder Grabenbreite einer Fotoresiststruktur unter Verwendung von Lösungsmittelsystemen geringer Polarität |
DE102004025202B4 (de) * | 2004-05-22 | 2008-04-10 | Infineon Technologies Ag | Fotolackverarbeitungsverfahren |
KR100712999B1 (ko) * | 2006-03-29 | 2007-05-02 | 주식회사 하이닉스반도체 | 유기 반사 방지막 중합체, 이를 포함하는 유기 반사 방지막조성물 및 이를 이용한 포토레지스트의 패턴 형성 방법 |
US8530148B2 (en) * | 2006-12-25 | 2013-09-10 | Fujifilm Corporation | Pattern forming method, resist composition for multiple development used in the pattern forming method, developer for negative development used in the pattern forming method, and rinsing solution for negative development used in the pattern forming method |
JP4554665B2 (ja) | 2006-12-25 | 2010-09-29 | 富士フイルム株式会社 | パターン形成方法、該パターン形成方法に用いられる多重現像用ポジ型レジスト組成物、該パターン形成方法に用いられるネガ現像用現像液及び該パターン形成方法に用いられるネガ現像用リンス液 |
US8637229B2 (en) * | 2006-12-25 | 2014-01-28 | Fujifilm Corporation | Pattern forming method, resist composition for multiple development used in the pattern forming method, developer for negative development used in the pattern forming method, and rinsing solution for negative development used in the pattern forming method |
US8034547B2 (en) * | 2007-04-13 | 2011-10-11 | Fujifilm Corporation | Pattern forming method, resist composition to be used in the pattern forming method, negative developing solution to be used in the pattern forming method and rinsing solution for negative development to be used in the pattern forming method |
EP1980911A3 (en) * | 2007-04-13 | 2009-06-24 | FUJIFILM Corporation | Pattern forming method, resist composition to be used in the pattern forming method, negative developing solution to be used in the pattern forming method and rinsing solution for negative development to be used in the pattern forming method |
KR100990106B1 (ko) | 2007-04-13 | 2010-10-29 | 후지필름 가부시키가이샤 | 패턴형성방법, 이 패턴형성방법에 사용되는 레지스트 조성물, 현상액 및 린스액 |
US8603733B2 (en) | 2007-04-13 | 2013-12-10 | Fujifilm Corporation | Pattern forming method, and resist composition, developer and rinsing solution used in the pattern forming method |
US8476001B2 (en) | 2007-05-15 | 2013-07-02 | Fujifilm Corporation | Pattern forming method |
US7985534B2 (en) * | 2007-05-15 | 2011-07-26 | Fujifilm Corporation | Pattern forming method |
KR101452229B1 (ko) * | 2007-06-12 | 2014-10-22 | 후지필름 가부시키가이샤 | 네가티브 톤 현상용 레지스트 조성물 및 이것을 사용한 패턴형성방법 |
US8632942B2 (en) | 2007-06-12 | 2014-01-21 | Fujifilm Corporation | Method of forming patterns |
JP4617337B2 (ja) * | 2007-06-12 | 2011-01-26 | 富士フイルム株式会社 | パターン形成方法 |
US8617794B2 (en) | 2007-06-12 | 2013-12-31 | Fujifilm Corporation | Method of forming patterns |
JP4590431B2 (ja) | 2007-06-12 | 2010-12-01 | 富士フイルム株式会社 | パターン形成方法 |
US8703401B2 (en) * | 2011-06-01 | 2014-04-22 | Jsr Corporation | Method for forming pattern and developer |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4491628A (en) * | 1982-08-23 | 1985-01-01 | International Business Machines Corporation | Positive- and negative-working resist compositions with acid generating photoinitiator and polymer with acid labile groups pendant from polymer backbone |
US4837124A (en) * | 1986-02-24 | 1989-06-06 | Hoechst Celanese Corporation | High resolution photoresist of imide containing polymers |
US4912018A (en) * | 1986-02-24 | 1990-03-27 | Hoechst Celanese Corporation | High resolution photoresist based on imide containing polymers |
DE58908411D1 (de) * | 1989-03-20 | 1994-10-27 | Siemens Ag | Hochauflösender Photoresist. |
DE3913434A1 (de) * | 1989-04-24 | 1990-10-25 | Siemens Ag | Trockenwickelbares resistsystem |
DE59010729D1 (de) * | 1989-04-24 | 1997-07-31 | Siemens Ag | Photostrukturierungsverfahren |
-
1991
- 1991-12-09 EP EP91121084A patent/EP0492253B1/de not_active Expired - Lifetime
- 1991-12-09 ES ES91121084T patent/ES2101710T3/es not_active Expired - Lifetime
- 1991-12-09 DE DE59108680T patent/DE59108680D1/de not_active Expired - Lifetime
- 1991-12-18 JP JP3353044A patent/JP3067871B2/ja not_active Expired - Lifetime
- 1991-12-20 US US07/812,585 patent/US5250375A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
DE59108680D1 (de) | 1997-05-28 |
JP3067871B2 (ja) | 2000-07-24 |
EP0492253A1 (de) | 1992-07-01 |
US5250375A (en) | 1993-10-05 |
EP0492253B1 (de) | 1997-04-23 |
JPH0511456A (ja) | 1993-01-22 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
FG2A | Definitive protection |
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