ID26627A - Komposisi-komposisi penahan polisiklik dengan tahanan etsa yang ditingkatkan - Google Patents

Komposisi-komposisi penahan polisiklik dengan tahanan etsa yang ditingkatkan

Info

Publication number
ID26627A
ID26627A IDW20001889A ID20001889A ID26627A ID 26627 A ID26627 A ID 26627A ID W20001889 A IDW20001889 A ID W20001889A ID 20001889 A ID20001889 A ID 20001889A ID 26627 A ID26627 A ID 26627A
Authority
ID
Indonesia
Prior art keywords
policiclic
etsa
detention
compositions
resistance
Prior art date
Application number
IDW20001889A
Other languages
English (en)
Inventor
Saikumar Jayaraman
Brian L Goodall
Larry F Rhodes
Robert A Shick
Richard Vicari
Robert D Allen
Juliann Opitz
Ratnam Sooriyakumaran
Thomas Wallow
Original Assignee
B F Goodrich Company Cs
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by B F Goodrich Company Cs filed Critical B F Goodrich Company Cs
Publication of ID26627A publication Critical patent/ID26627A/id

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F232/00—Copolymers of cyclic compounds containing no unsaturated aliphatic radicals in a side chain, and having one or more carbon-to-carbon double bonds in a carbocyclic ring system
    • C08F232/08—Copolymers of cyclic compounds containing no unsaturated aliphatic radicals in a side chain, and having one or more carbon-to-carbon double bonds in a carbocyclic ring system having condensed rings
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G61/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
    • C08G61/02—Macromolecular compounds containing only carbon atoms in the main chain of the macromolecule, e.g. polyxylylenes
    • C08G61/04—Macromolecular compounds containing only carbon atoms in the main chain of the macromolecule, e.g. polyxylylenes only aliphatic carbon atoms
    • C08G61/06—Macromolecular compounds containing only carbon atoms in the main chain of the macromolecule, e.g. polyxylylenes only aliphatic carbon atoms prepared by ring-opening of carbocyclic compounds
    • C08G61/08—Macromolecular compounds containing only carbon atoms in the main chain of the macromolecule, e.g. polyxylylenes only aliphatic carbon atoms prepared by ring-opening of carbocyclic compounds of carbocyclic compounds containing one or more carbon-to-carbon double bonds in the ring
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/114—Initiator containing
    • Y10S430/115—Cationic or anionic

Landscapes

  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Health & Medical Sciences (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Materials For Photolithography (AREA)
  • Polymerisation Methods In General (AREA)
  • Polyethers (AREA)
  • Polyoxymethylene Polymers And Polymers With Carbon-To-Carbon Bonds (AREA)
  • Polymerization Catalysts (AREA)
  • Organic Insulating Materials (AREA)
  • Drying Of Semiconductors (AREA)
IDW20001889A 1998-02-23 1999-02-19 Komposisi-komposisi penahan polisiklik dengan tahanan etsa yang ditingkatkan ID26627A (id)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US7555798P 1998-02-23 1998-02-23

Publications (1)

Publication Number Publication Date
ID26627A true ID26627A (id) 2001-01-25

Family

ID=22126530

Family Applications (1)

Application Number Title Priority Date Filing Date
IDW20001889A ID26627A (id) 1998-02-23 1999-02-19 Komposisi-komposisi penahan polisiklik dengan tahanan etsa yang ditingkatkan

Country Status (12)

Country Link
US (2) US6147177A (id)
EP (2) EP2045275B1 (id)
JP (2) JP2002504573A (id)
KR (1) KR100617354B1 (id)
CN (1) CN1223615C (id)
AT (1) ATE542837T1 (id)
AU (1) AU3303599A (id)
HK (1) HK1035199A1 (id)
ID (1) ID26627A (id)
MY (1) MY133442A (id)
TW (1) TWI250384B (id)
WO (1) WO1999042502A1 (id)

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KR100382960B1 (ko) * 1998-07-03 2003-05-09 닛뽕덴끼 가부시끼가이샤 락톤 구조를 갖는 (메트)아크릴레이트 유도체, 중합체,포토레지스트 조성물, 및 이것을 사용한 패턴 형성 방법
KR20000015014A (ko) * 1998-08-26 2000-03-15 김영환 신규의 포토레지스트용 단량체, 중합체 및 이를 이용한 포토레지스트 조성물
KR100441734B1 (ko) * 1998-11-02 2004-08-04 신에쓰 가가꾸 고교 가부시끼가이샤 신규한 에스테르 화합물, 고분자 화합물, 레지스트 재료및 패턴 형성 방법
JP5095048B2 (ja) * 1999-11-15 2012-12-12 信越化学工業株式会社 高分子化合物、レジスト材料及びパターン形成方法
KR100596873B1 (ko) * 2000-07-13 2006-07-04 주식회사 하이닉스반도체 Ｔｉｐｓ용 포토레지스트 조성물
US7202009B2 (en) * 2000-09-08 2007-04-10 Shipley Company, L.L.C. Polymers and photoresist compositions for short wavelength imaging
KR20030087190A (ko) * 2002-05-07 2003-11-14 삼성전자주식회사 감광성 폴리머 및 이를 포함하는 레지스트 조성물
WO2004029720A1 (ja) * 2002-09-30 2004-04-08 Zeon Corporation 感放射線性樹脂組成物、樹脂パターン膜とその形成方法、及び樹脂パターン膜の利用
US6756180B2 (en) 2002-10-22 2004-06-29 International Business Machines Corporation Cyclic olefin-based resist compositions having improved image stability
WO2004044029A1 (ja) 2002-11-14 2004-05-27 Jsr Corporation ノルボルネン系開環重合体
TWI295410B (en) * 2002-11-29 2008-04-01 Zeon Corp Radiation-sensitive resin composition
US7674847B2 (en) 2003-02-21 2010-03-09 Promerus Llc Vinyl addition polycyclic olefin polymers prepared with non-olefinic chain transfer agents and uses thereof
US7402642B2 (en) * 2003-12-23 2008-07-22 Exxonmobil Research And Engineering Company Linear functional copolymers of ethylene with precise and minimum run length distributions and method of making thereof
US7101654B2 (en) * 2004-01-14 2006-09-05 Promerus Llc Norbornene-type monomers and polymers containing pendent lactone or sultone groups
US20050192409A1 (en) * 2004-02-13 2005-09-01 Rhodes Larry F. Polymers of polycyclic olefins having a polyhedral oligosilsesquioxane pendant group and uses thereof
FR2871803B1 (fr) * 2004-06-21 2007-05-11 Centre Nat Rech Scient Cnrse Particules polymeres stimulables presentant des fonctions reactives, leur procede d'obtention, et leurs utilisations
JP2008031319A (ja) * 2006-07-28 2008-02-14 Fujifilm Corp ノルボルネン系重合体、フィルム、偏光板および液晶表示装置
US7727705B2 (en) * 2007-02-23 2010-06-01 Fujifilm Electronic Materials, U.S.A., Inc. High etch resistant underlayer compositions for multilayer lithographic processes
JP5017227B2 (ja) * 2008-09-26 2012-09-05 富士フイルム株式会社 ノルボルネン系付加重合体、それを用いた光学材料
US8753790B2 (en) * 2009-07-01 2014-06-17 Promerus, Llc Self-imageable film forming polymer, compositions thereof and devices and structures made therefrom
WO2012026465A1 (ja) * 2010-08-27 2012-03-01 住友ベークライト株式会社 フォトレジスト用樹脂組成物
JP5728762B2 (ja) * 2010-11-24 2015-06-03 住友ベークライト株式会社 自己画像形成性フィルム形成ポリマー、その組成物、並びにそれから製造されるデバイス及び構造物
JP5728790B2 (ja) * 2011-07-14 2015-06-03 住友ベークライト株式会社 自己現像層形成ポリマーおよびその組成物
US8703391B1 (en) * 2011-11-29 2014-04-22 Sandia Corporation Polymeric matrix materials for infrared metamaterials
JP6065862B2 (ja) * 2013-04-10 2017-01-25 信越化学工業株式会社 パターン形成方法、レジスト組成物、高分子化合物及び単量体
US9772558B2 (en) 2013-09-24 2017-09-26 International Business Machines Corporation Sulfonic acid ester containing polymers for organic solvent based dual-tone photoresists
JP2016145268A (ja) * 2015-02-06 2016-08-12 株式会社カネカ 重合体の製造方法

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KR100555605B1 (ko) * 1998-02-23 2006-03-03 스미토모 베이클라이트 가부시키가이샤 개질된 폴리시클릭 중합체 및 이를 제조하는 방법

Also Published As

Publication number Publication date
JP2002504573A (ja) 2002-02-12
US6147177A (en) 2000-11-14
KR100617354B1 (ko) 2006-08-31
EP2045275B1 (en) 2012-01-25
MY133442A (en) 2007-11-30
ATE542837T1 (de) 2012-02-15
HK1035199A1 (en) 2001-11-16
EP1058699A1 (en) 2000-12-13
CN1223615C (zh) 2005-10-19
AU3303599A (en) 1999-09-06
EP2045275A3 (en) 2009-07-29
CN1292002A (zh) 2001-04-18
KR20010041216A (ko) 2001-05-15
EP2045275A2 (en) 2009-04-08
TWI250384B (en) 2006-03-01
US6451499B1 (en) 2002-09-17
WO1999042502A1 (en) 1999-08-26
JP2009235414A (ja) 2009-10-15

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