ID25549A - Komposisi tahan cahaya yang terdiri dari polimer polimer polisiklik dengan kelompok pendan asam labile - Google Patents

Komposisi tahan cahaya yang terdiri dari polimer polimer polisiklik dengan kelompok pendan asam labile

Info

Publication number
ID25549A
ID25549A IDW20000568A ID20000568A ID25549A ID 25549 A ID25549 A ID 25549A ID W20000568 A IDW20000568 A ID W20000568A ID 20000568 A ID20000568 A ID 20000568A ID 25549 A ID25549 A ID 25549A
Authority
ID
Indonesia
Prior art keywords
polymer
composition
light resistance
containing polymeric
resistance containing
Prior art date
Application number
IDW20000568A
Other languages
English (en)
Inventor
Brian L Goodall
Jayaraman Saikumar
Robert A Shick
Larry F Rhodes
Allen Robert David
Dipietro Richard Anthony
Wallow Thomas
Original Assignee
Goodrich Co B F
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Goodrich Co B F filed Critical Goodrich Co B F
Publication of ID25549A publication Critical patent/ID25549A/id

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D487/00—Heterocyclic compounds containing nitrogen atoms as the only ring hetero atoms in the condensed system, not provided for by groups C07D451/00 - C07D477/00
    • C07D487/02—Heterocyclic compounds containing nitrogen atoms as the only ring hetero atoms in the condensed system, not provided for by groups C07D451/00 - C07D477/00 in which the condensed system contains two hetero rings
    • C07D487/04—Ortho-condensed systems
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F232/00—Copolymers of cyclic compounds containing no unsaturated aliphatic radicals in a side chain, and having one or more carbon-to-carbon double bonds in a carbocyclic ring system
    • C08F232/08—Copolymers of cyclic compounds containing no unsaturated aliphatic radicals in a side chain, and having one or more carbon-to-carbon double bonds in a carbocyclic ring system having condensed rings
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G61/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
    • C08G61/02—Macromolecular compounds containing only carbon atoms in the main chain of the macromolecule, e.g. polyxylylenes
    • C08G61/04—Macromolecular compounds containing only carbon atoms in the main chain of the macromolecule, e.g. polyxylylenes only aliphatic carbon atoms
    • C08G61/06—Macromolecular compounds containing only carbon atoms in the main chain of the macromolecule, e.g. polyxylylenes only aliphatic carbon atoms prepared by ring-opening of carbocyclic compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors

Landscapes

  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Medicinal Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Polymers & Plastics (AREA)
  • Health & Medical Sciences (AREA)
  • Materials For Photolithography (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Polymerisation Methods In General (AREA)
  • Polyoxymethylene Polymers And Polymers With Carbon-To-Carbon Bonds (AREA)
IDW20000568A 1997-09-12 1998-09-03 Komposisi tahan cahaya yang terdiri dari polimer polimer polisiklik dengan kelompok pendan asam labile ID25549A (id)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US92890097A 1997-09-12 1997-09-12

Publications (1)

Publication Number Publication Date
ID25549A true ID25549A (id) 2000-10-12

Family

ID=25456971

Family Applications (1)

Application Number Title Priority Date Filing Date
IDW20000568A ID25549A (id) 1997-09-12 1998-09-03 Komposisi tahan cahaya yang terdiri dari polimer polimer polisiklik dengan kelompok pendan asam labile

Country Status (10)

Country Link
EP (1) EP1021750A1 (id)
JP (1) JP4416941B2 (id)
KR (1) KR100572899B1 (id)
CN (1) CN1251021C (id)
AU (1) AU747516C (id)
ID (1) ID25549A (id)
MY (1) MY123980A (id)
RU (1) RU2199773C2 (id)
TW (1) TWI235285B (id)
WO (1) WO1999014635A1 (id)

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KR100617354B1 (ko) * 1998-02-23 2006-08-31 스미토모 베이클라이트 가부시키가이샤 증가된 에칭 저항성을 갖는 폴리시클릭 레지스트 조성물
JP5095048B2 (ja) * 1999-11-15 2012-12-12 信越化学工業株式会社 高分子化合物、レジスト材料及びパターン形成方法
EP1130468A3 (en) * 2000-02-25 2003-07-30 Shipley Company LLC Polymer and photoresist compositions
US6531627B2 (en) * 2000-04-27 2003-03-11 Shin-Etsu Chemical Co., Ltd. Ester compounds, polymers, resist compositions and patterning process
JP3997382B2 (ja) * 2000-04-28 2007-10-24 信越化学工業株式会社 脂環構造を有する新規エステル化合物及びその製造方法
TWI284782B (en) * 2000-04-28 2007-08-01 Shinetsu Chemical Co Polymers, resist compositions and patterning process
JP3997381B2 (ja) * 2000-04-28 2007-10-24 信越化学工業株式会社 脂環構造を有する新規エステル化合物及びその製造方法
JP4544389B2 (ja) * 2000-04-28 2010-09-15 信越化学工業株式会社 高分子化合物、レジスト材料及びパターン形成方法
JP4626736B2 (ja) * 2000-10-04 2011-02-09 Ｊｓｒ株式会社 環状オレフィン系共重合体を含む光学透明材料および液晶表示基板材料
KR100555287B1 (ko) * 2001-01-17 2006-03-03 신에쓰 가가꾸 고교 가부시끼가이샤 에테르 화합물, 고분자 화합물, 레지스트 재료 및 패턴형성 방법
CN100386357C (zh) * 2002-04-08 2008-05-07 日本瑞翁株式会社 基于降冰片烯的开环聚合物,降冰片烯开环聚合物的加氢产物及它们的制备方法
US7989571B2 (en) 2002-07-10 2011-08-02 Lg Chem, Ltd. Method for producing norbornene monomer composition, norbornene polymer prepared therefrom, optical film comprising the norbornene polymer, and method for producing the norbornene polymer
KR100526403B1 (ko) 2002-07-10 2005-11-08 주식회사 엘지화학 에스테르기 또는 아세틸기를 포함하는 노보넨계부가중합체의 제조방법
CN100334117C (zh) 2002-07-10 2007-08-29 Lg化学株式会社 制备含有酯或乙酰功能基团的降冰片烯基加成聚合物的方法
EP1521791B1 (en) * 2002-07-10 2007-01-10 LG Chem, Ltd. Nobonene-ester based addition polymer and method for preparing the same
WO2004074933A2 (en) * 2003-02-20 2004-09-02 Promerus Llc Dissolution rate modifiers for photoresist compositions
KR20060120116A (ko) * 2003-11-18 2006-11-24 제이에스알 가부시끼가이샤 신규한 (공)중합체 및 그의 제조 방법, 및 카르복실기 함유(공)중합체의 제조 방법
JP2006100563A (ja) * 2004-09-29 2006-04-13 Sumitomo Bakelite Co Ltd 半導体装置
US8637229B2 (en) 2006-12-25 2014-01-28 Fujifilm Corporation Pattern forming method, resist composition for multiple development used in the pattern forming method, developer for negative development used in the pattern forming method, and rinsing solution for negative development used in the pattern forming method
JP4554665B2 (ja) 2006-12-25 2010-09-29 富士フイルム株式会社 パターン形成方法、該パターン形成方法に用いられる多重現像用ポジ型レジスト組成物、該パターン形成方法に用いられるネガ現像用現像液及び該パターン形成方法に用いられるネガ現像用リンス液
US8530148B2 (en) 2006-12-25 2013-09-10 Fujifilm Corporation Pattern forming method, resist composition for multiple development used in the pattern forming method, developer for negative development used in the pattern forming method, and rinsing solution for negative development used in the pattern forming method
JP4562784B2 (ja) 2007-04-13 2010-10-13 富士フイルム株式会社 パターン形成方法、該パターン形成方法に用いられるレジスト組成物、現像液及びリンス液
US8034547B2 (en) 2007-04-13 2011-10-11 Fujifilm Corporation Pattern forming method, resist composition to be used in the pattern forming method, negative developing solution to be used in the pattern forming method and rinsing solution for negative development to be used in the pattern forming method
US8603733B2 (en) 2007-04-13 2013-12-10 Fujifilm Corporation Pattern forming method, and resist composition, developer and rinsing solution used in the pattern forming method
RU2439104C2 (ru) * 2007-04-27 2012-01-10 Мицуи Кемикалз, Инк. Полимерная композиция и формованное изделие, полученное из данной композиции
US8476001B2 (en) 2007-05-15 2013-07-02 Fujifilm Corporation Pattern forming method
JP4558064B2 (ja) 2007-05-15 2010-10-06 富士フイルム株式会社 パターン形成方法
JP4617337B2 (ja) 2007-06-12 2011-01-26 富士フイルム株式会社 パターン形成方法
US8632942B2 (en) 2007-06-12 2014-01-21 Fujifilm Corporation Method of forming patterns
JP4590431B2 (ja) 2007-06-12 2010-12-01 富士フイルム株式会社 パターン形成方法
EP2157477B1 (en) 2007-06-12 2014-08-06 FUJIFILM Corporation Use of a resist composition for negative working-type development, and method for pattern formation using the resist composition
US8617794B2 (en) 2007-06-12 2013-12-31 Fujifilm Corporation Method of forming patterns
JP5332883B2 (ja) * 2009-04-30 2013-11-06 住友ベークライト株式会社 感光性組成物、光導波路、光配線、光電気混載基板、電子機器、および光導波路の形成方法
RU2427016C1 (ru) * 2010-03-03 2011-08-20 Закрытое акционерное общество "Институт прикладной нанотехнологии" Способ получения позитивного фоторезиста
JP6459192B2 (ja) * 2014-03-20 2019-01-30 住友ベークライト株式会社 感光性樹脂組成物
KR102324819B1 (ko) 2014-12-12 2021-11-11 삼성전자주식회사 포토레지스트용 고분자, 포토레지스트 조성물, 패턴 형성 방법 및 반도체 장치의 제조 방법
KR101746789B1 (ko) 2014-12-18 2017-06-13 주식회사 엘지화학 고리형 올레핀 화합물의 (공)중합체를 포함하는 수직 배향막
GB201522304D0 (en) 2015-12-17 2016-02-03 Mars Inc Food product for reducing muscle breakdown

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US4106943A (en) * 1973-09-27 1978-08-15 Japan Synthetic Rubber Co., Ltd. Photosensitive cross-linkable azide containing polymeric composition
US4571375A (en) * 1983-10-24 1986-02-18 Benedikt George M Ring-opened polynorbornene negative photoresist with bisazide
JP3804138B2 (ja) * 1996-02-09 2006-08-02 Ｊｓｒ株式会社 ＡｒＦエキシマレーザー照射用感放射線性樹脂組成物
KR100536824B1 (ko) * 1996-03-07 2006-03-09 스미토모 베이클라이트 가부시키가이샤 산불안정성펜던트기를지닌다중고리중합체를포함하는포토레지스트조성물
KR100261022B1 (ko) * 1996-10-11 2000-09-01 윤종용 화학증폭형 레지스트 조성물

Also Published As

Publication number Publication date
JP4416941B2 (ja) 2010-02-17
AU9219998A (en) 1999-04-05
CN1276884A (zh) 2000-12-13
KR20010023940A (ko) 2001-03-26
TWI235285B (en) 2005-07-01
AU747516C (en) 2003-07-24
RU2199773C2 (ru) 2003-02-27
WO1999014635A1 (en) 1999-03-25
KR100572899B1 (ko) 2006-04-24
EP1021750A1 (en) 2000-07-26
JP2001516804A (ja) 2001-10-02
HK1030992A1 (en) 2001-05-25
AU747516B2 (en) 2002-05-16
MY123980A (en) 2006-06-30
CN1251021C (zh) 2006-04-12

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