MY123980A - Photoresist compositions comprising polycyclic polymers with acid labile pendant groups - Google Patents
Photoresist compositions comprising polycyclic polymers with acid labile pendant groupsInfo
- Publication number
- MY123980A MY123980A MYPI98004156A MYPI9804156A MY123980A MY 123980 A MY123980 A MY 123980A MY PI98004156 A MYPI98004156 A MY PI98004156A MY PI9804156 A MYPI9804156 A MY PI9804156A MY 123980 A MY123980 A MY 123980A
- Authority
- MY
- Malaysia
- Prior art keywords
- acid labile
- polymer
- pendant groups
- photoresist compositions
- labile pendant
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
- G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D487/00—Heterocyclic compounds containing nitrogen atoms as the only ring hetero atoms in the condensed system, not provided for by groups C07D451/00 - C07D477/00
- C07D487/02—Heterocyclic compounds containing nitrogen atoms as the only ring hetero atoms in the condensed system, not provided for by groups C07D451/00 - C07D477/00 in which the condensed system contains two hetero rings
- C07D487/04—Ortho-condensed systems
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F232/00—Copolymers of cyclic compounds containing no unsaturated aliphatic radicals in a side chain, and having one or more carbon-to-carbon double bonds in a carbocyclic ring system
- C08F232/08—Copolymers of cyclic compounds containing no unsaturated aliphatic radicals in a side chain, and having one or more carbon-to-carbon double bonds in a carbocyclic ring system having condensed rings
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G61/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
- C08G61/02—Macromolecular compounds containing only carbon atoms in the main chain of the macromolecule, e.g. polyxylylenes
- C08G61/04—Macromolecular compounds containing only carbon atoms in the main chain of the macromolecule, e.g. polyxylylenes only aliphatic carbon atoms
- C08G61/06—Macromolecular compounds containing only carbon atoms in the main chain of the macromolecule, e.g. polyxylylenes only aliphatic carbon atoms prepared by ring-opening of carbocyclic compounds
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
Abstract
THE PRESENT INVENTION RELATES TO A RADIATION SENSITIVE PHOTORESIST COMPOSITION COMPRISING A PHOTOACID INITIATOR AND A POLYCYCLIC POLYMER COMPRISING REPEATING UNITS THAT CONTAIN PENDANT ACID LABILE GROUPS. UPON EXPOSURE TO AN IMAGING RADIATION SOURCE THE PHOTOACID INITIATOR GENERATES AN ACID WHICH CLEAVES THE PENDANT ACID LABILE GROUPS EFFECTING A POLARITY CHANGE IN THE POLYMER. THE POLYMER IS RENDERED SOLUBLE IN AN AQUEOUS BASE IN THE AREAS EXPOSED TO THE IMAGING SOURCE.(FIGURE 1)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US92890097A | 1997-09-12 | 1997-09-12 |
Publications (1)
Publication Number | Publication Date |
---|---|
MY123980A true MY123980A (en) | 2006-06-30 |
Family
ID=25456971
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
MYPI98004156A MY123980A (en) | 1997-09-12 | 1998-09-10 | Photoresist compositions comprising polycyclic polymers with acid labile pendant groups |
Country Status (11)
Country | Link |
---|---|
EP (1) | EP1021750A1 (en) |
JP (1) | JP4416941B2 (en) |
KR (1) | KR100572899B1 (en) |
CN (1) | CN1251021C (en) |
AU (1) | AU747516C (en) |
HK (1) | HK1030992A1 (en) |
ID (1) | ID25549A (en) |
MY (1) | MY123980A (en) |
RU (1) | RU2199773C2 (en) |
TW (1) | TWI235285B (en) |
WO (1) | WO1999014635A1 (en) |
Families Citing this family (35)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100617354B1 (en) * | 1998-02-23 | 2006-08-31 | 스미토모 베이클라이트 가부시키가이샤 | Polycyclic resist compositions with increased etch resistance |
JP5095048B2 (en) * | 1999-11-15 | 2012-12-12 | 信越化学工業株式会社 | Polymer compound, resist material, and pattern forming method |
EP1130468A3 (en) * | 2000-02-25 | 2003-07-30 | Shipley Company LLC | Polymer and photoresist compositions |
US6531627B2 (en) * | 2000-04-27 | 2003-03-11 | Shin-Etsu Chemical Co., Ltd. | Ester compounds, polymers, resist compositions and patterning process |
JP4544389B2 (en) * | 2000-04-28 | 2010-09-15 | 信越化学工業株式会社 | Polymer compound, resist material, and pattern forming method |
JP3997382B2 (en) * | 2000-04-28 | 2007-10-24 | 信越化学工業株式会社 | Novel ester compound having alicyclic structure and process for producing the same |
US6566038B2 (en) | 2000-04-28 | 2003-05-20 | Shin-Etsu Chemical Co., Ltd. | Polymers, resist compositions and patterning process |
JP3997381B2 (en) * | 2000-04-28 | 2007-10-24 | 信越化学工業株式会社 | Novel ester compound having alicyclic structure and process for producing the same |
JP4626736B2 (en) * | 2000-10-04 | 2011-02-09 | Jsr株式会社 | Optically transparent material and liquid crystal display substrate material containing cyclic olefin copolymer |
TW544455B (en) * | 2001-01-17 | 2003-08-01 | Shinetsu Chemical Co | Ether, polymer, resist composition and patterning process |
KR100948708B1 (en) * | 2002-04-08 | 2010-03-22 | 니폰 제온 가부시키가이샤 | Norbornene-based ring-opening polymerization polymer, product of hydrogenation of norbornene-based ring-opening polymerization polymer, and processes for producing these |
CN1281653C (en) * | 2002-07-10 | 2006-10-25 | Lg化学株式会社 | Nobonene-ester based addition polymer and method for preparing the same |
US7989571B2 (en) | 2002-07-10 | 2011-08-02 | Lg Chem, Ltd. | Method for producing norbornene monomer composition, norbornene polymer prepared therefrom, optical film comprising the norbornene polymer, and method for producing the norbornene polymer |
US7312285B2 (en) | 2002-07-10 | 2007-12-25 | Lg Chem, Ltd. | Method for preparing norbornene based addition polymer containing ester or acetyl functional group |
KR100561068B1 (en) | 2002-07-10 | 2006-03-15 | 주식회사 엘지화학 | Norbornene-ester based addition polymer and method for preparing the same |
CN101095082B (en) * | 2003-02-20 | 2012-08-08 | 普罗梅鲁斯有限责任公司 | Dissolution rate modifiers for photoresist compositions |
US20070112158A1 (en) * | 2003-11-18 | 2007-05-17 | Jsr Corporation | Novel (co)polymer, process for producing the same, and process for producing carboxylated (co)polymer |
JP2006100563A (en) * | 2004-09-29 | 2006-04-13 | Sumitomo Bakelite Co Ltd | Semiconductor device |
JP4554665B2 (en) | 2006-12-25 | 2010-09-29 | 富士フイルム株式会社 | PATTERN FORMATION METHOD, POSITIVE RESIST COMPOSITION FOR MULTIPLE DEVELOPMENT USED FOR THE PATTERN FORMATION METHOD, NEGATIVE DEVELOPMENT SOLUTION USED FOR THE PATTERN FORMATION METHOD, AND NEGATIVE DEVELOPMENT RINSE SOLUTION USED FOR THE PATTERN FORMATION METHOD |
US8530148B2 (en) | 2006-12-25 | 2013-09-10 | Fujifilm Corporation | Pattern forming method, resist composition for multiple development used in the pattern forming method, developer for negative development used in the pattern forming method, and rinsing solution for negative development used in the pattern forming method |
US8637229B2 (en) | 2006-12-25 | 2014-01-28 | Fujifilm Corporation | Pattern forming method, resist composition for multiple development used in the pattern forming method, developer for negative development used in the pattern forming method, and rinsing solution for negative development used in the pattern forming method |
US8603733B2 (en) | 2007-04-13 | 2013-12-10 | Fujifilm Corporation | Pattern forming method, and resist composition, developer and rinsing solution used in the pattern forming method |
US8034547B2 (en) | 2007-04-13 | 2011-10-11 | Fujifilm Corporation | Pattern forming method, resist composition to be used in the pattern forming method, negative developing solution to be used in the pattern forming method and rinsing solution for negative development to be used in the pattern forming method |
US8476001B2 (en) | 2007-05-15 | 2013-07-02 | Fujifilm Corporation | Pattern forming method |
JP4558064B2 (en) | 2007-05-15 | 2010-10-06 | 富士フイルム株式会社 | Pattern formation method |
JP4617337B2 (en) | 2007-06-12 | 2011-01-26 | 富士フイルム株式会社 | Pattern formation method |
JP4590431B2 (en) | 2007-06-12 | 2010-12-01 | 富士フイルム株式会社 | Pattern formation method |
US8617794B2 (en) | 2007-06-12 | 2013-12-31 | Fujifilm Corporation | Method of forming patterns |
US9046782B2 (en) | 2007-06-12 | 2015-06-02 | Fujifilm Corporation | Resist composition for negative tone development and pattern forming method using the same |
US8632942B2 (en) | 2007-06-12 | 2014-01-21 | Fujifilm Corporation | Method of forming patterns |
JP5332883B2 (en) * | 2009-04-30 | 2013-11-06 | 住友ベークライト株式会社 | Photosensitive composition, optical waveguide, optical wiring, opto-electric hybrid board, electronic device, and method for forming optical waveguide |
JP6459192B2 (en) * | 2014-03-20 | 2019-01-30 | 住友ベークライト株式会社 | Photosensitive resin composition |
KR102324819B1 (en) | 2014-12-12 | 2021-11-11 | 삼성전자주식회사 | Photoresist polymers, photoresist compositions, methods of forming patterns and methods of manufacturing semiconductor devices |
KR101746789B1 (en) | 2014-12-18 | 2017-06-13 | 주식회사 엘지화학 | Vertical alignment layer comprising a cyclic olefin copolymer |
GB201522304D0 (en) | 2015-12-17 | 2016-02-03 | Mars Inc | Food product for reducing muscle breakdown |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4106943A (en) * | 1973-09-27 | 1978-08-15 | Japan Synthetic Rubber Co., Ltd. | Photosensitive cross-linkable azide containing polymeric composition |
US4571375A (en) * | 1983-10-24 | 1986-02-18 | Benedikt George M | Ring-opened polynorbornene negative photoresist with bisazide |
JP3804138B2 (en) * | 1996-02-09 | 2006-08-02 | Jsr株式会社 | Radiation sensitive resin composition for ArF excimer laser irradiation |
AU725653B2 (en) * | 1996-03-07 | 2000-10-19 | B.F. Goodrich Company, The | Photoresist compositions comprising polycyclic polymers with acid labile pendant groups |
KR100261022B1 (en) * | 1996-10-11 | 2000-09-01 | 윤종용 | Chemically amplified resist composition |
-
1998
- 1998-09-03 RU RU2000109327/04A patent/RU2199773C2/en not_active IP Right Cessation
- 1998-09-03 ID IDW20000568A patent/ID25549A/en unknown
- 1998-09-03 AU AU92199/98A patent/AU747516C/en not_active Ceased
- 1998-09-03 KR KR1020007002642A patent/KR100572899B1/en not_active IP Right Cessation
- 1998-09-03 EP EP98944729A patent/EP1021750A1/en not_active Withdrawn
- 1998-09-03 JP JP2000512109A patent/JP4416941B2/en not_active Expired - Fee Related
- 1998-09-03 WO PCT/US1998/018353 patent/WO1999014635A1/en not_active Application Discontinuation
- 1998-09-03 CN CNB988089661A patent/CN1251021C/en not_active Expired - Fee Related
- 1998-09-10 MY MYPI98004156A patent/MY123980A/en unknown
- 1998-10-23 TW TW087115292A patent/TWI235285B/en not_active IP Right Cessation
-
2001
- 2001-03-12 HK HK01101755A patent/HK1030992A1/en not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
JP2001516804A (en) | 2001-10-02 |
AU747516B2 (en) | 2002-05-16 |
RU2199773C2 (en) | 2003-02-27 |
TWI235285B (en) | 2005-07-01 |
WO1999014635A1 (en) | 1999-03-25 |
HK1030992A1 (en) | 2001-05-25 |
EP1021750A1 (en) | 2000-07-26 |
CN1276884A (en) | 2000-12-13 |
AU747516C (en) | 2003-07-24 |
ID25549A (en) | 2000-10-12 |
KR20010023940A (en) | 2001-03-26 |
AU9219998A (en) | 1999-04-05 |
CN1251021C (en) | 2006-04-12 |
KR100572899B1 (en) | 2006-04-24 |
JP4416941B2 (en) | 2010-02-17 |
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