ID25549A - COMPOSITION OF LIGHT RESISTANCE CONTAINING POLYMERIC POLYMER POLYMER WITH LABILE ACID PLANTING GROUP - Google Patents

COMPOSITION OF LIGHT RESISTANCE CONTAINING POLYMERIC POLYMER POLYMER WITH LABILE ACID PLANTING GROUP

Info

Publication number
ID25549A
ID25549A IDW20000568A ID20000568A ID25549A ID 25549 A ID25549 A ID 25549A ID W20000568 A IDW20000568 A ID W20000568A ID 20000568 A ID20000568 A ID 20000568A ID 25549 A ID25549 A ID 25549A
Authority
ID
Indonesia
Prior art keywords
polymer
composition
light resistance
containing polymeric
resistance containing
Prior art date
Application number
IDW20000568A
Other languages
Indonesian (id)
Inventor
Brian L Goodall
Jayaraman Saikumar
Robert A Shick
Larry F Rhodes
Allen Robert David
Dipietro Richard Anthony
Wallow Thomas
Original Assignee
Goodrich Co B F
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Goodrich Co B F filed Critical Goodrich Co B F
Publication of ID25549A publication Critical patent/ID25549A/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D487/00—Heterocyclic compounds containing nitrogen atoms as the only ring hetero atoms in the condensed system, not provided for by groups C07D451/00 - C07D477/00
    • C07D487/02—Heterocyclic compounds containing nitrogen atoms as the only ring hetero atoms in the condensed system, not provided for by groups C07D451/00 - C07D477/00 in which the condensed system contains two hetero rings
    • C07D487/04—Ortho-condensed systems
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F232/00—Copolymers of cyclic compounds containing no unsaturated aliphatic radicals in a side chain, and having one or more carbon-to-carbon double bonds in a carbocyclic ring system
    • C08F232/08—Copolymers of cyclic compounds containing no unsaturated aliphatic radicals in a side chain, and having one or more carbon-to-carbon double bonds in a carbocyclic ring system having condensed rings
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G61/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
    • C08G61/02—Macromolecular compounds containing only carbon atoms in the main chain of the macromolecule, e.g. polyxylylenes
    • C08G61/04—Macromolecular compounds containing only carbon atoms in the main chain of the macromolecule, e.g. polyxylylenes only aliphatic carbon atoms
    • C08G61/06—Macromolecular compounds containing only carbon atoms in the main chain of the macromolecule, e.g. polyxylylenes only aliphatic carbon atoms prepared by ring-opening of carbocyclic compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
IDW20000568A 1997-09-12 1998-09-03 COMPOSITION OF LIGHT RESISTANCE CONTAINING POLYMERIC POLYMER POLYMER WITH LABILE ACID PLANTING GROUP ID25549A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US92890097A 1997-09-12 1997-09-12

Publications (1)

Publication Number Publication Date
ID25549A true ID25549A (en) 2000-10-12

Family

ID=25456971

Family Applications (1)

Application Number Title Priority Date Filing Date
IDW20000568A ID25549A (en) 1997-09-12 1998-09-03 COMPOSITION OF LIGHT RESISTANCE CONTAINING POLYMERIC POLYMER POLYMER WITH LABILE ACID PLANTING GROUP

Country Status (11)

Country Link
EP (1) EP1021750A1 (en)
JP (1) JP4416941B2 (en)
KR (1) KR100572899B1 (en)
CN (1) CN1251021C (en)
AU (1) AU747516C (en)
HK (1) HK1030992A1 (en)
ID (1) ID25549A (en)
MY (1) MY123980A (en)
RU (1) RU2199773C2 (en)
TW (1) TWI235285B (en)
WO (1) WO1999014635A1 (en)

Families Citing this family (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU3303599A (en) * 1998-02-23 1999-09-06 B.F. Goodrich Company, The Polycyclic resist compositions with increased etch resistance
JP5095048B2 (en) * 1999-11-15 2012-12-12 信越化学工業株式会社 Polymer compound, resist material, and pattern forming method
EP1130468A3 (en) * 2000-02-25 2003-07-30 Shipley Company LLC Polymer and photoresist compositions
US6531627B2 (en) * 2000-04-27 2003-03-11 Shin-Etsu Chemical Co., Ltd. Ester compounds, polymers, resist compositions and patterning process
JP3997381B2 (en) * 2000-04-28 2007-10-24 信越化学工業株式会社 Novel ester compound having alicyclic structure and process for producing the same
JP4544389B2 (en) * 2000-04-28 2010-09-15 信越化学工業株式会社 Polymer compound, resist material, and pattern forming method
TWI284782B (en) * 2000-04-28 2007-08-01 Shinetsu Chemical Co Polymers, resist compositions and patterning process
JP3997382B2 (en) * 2000-04-28 2007-10-24 信越化学工業株式会社 Novel ester compound having alicyclic structure and process for producing the same
JP4626736B2 (en) * 2000-10-04 2011-02-09 Ｊｓｒ株式会社 Optically transparent material and liquid crystal display substrate material containing cyclic olefin copolymer
TW544455B (en) * 2001-01-17 2003-08-01 Shinetsu Chemical Co Ether, polymer, resist composition and patterning process
KR100948708B1 (en) * 2002-04-08 2010-03-22 니폰 제온 가부시키가이샤 Norbornene-based ring-opening polymerization polymer, product of hydrogenation of norbornene-based ring-opening polymerization polymer, and processes for producing these
US7989571B2 (en) 2002-07-10 2011-08-02 Lg Chem, Ltd. Method for producing norbornene monomer composition, norbornene polymer prepared therefrom, optical film comprising the norbornene polymer, and method for producing the norbornene polymer
KR100561068B1 (en) 2002-07-10 2006-03-15 주식회사 엘지화학 Norbornene-ester based addition polymer and method for preparing the same
JP4018101B2 (en) * 2002-07-10 2007-12-05 エルジ・ケム・リミテッド Norbornene-ester addition polymer and process for producing the same
JP4242833B2 (en) 2002-07-10 2009-03-25 エルジー・ケム・リミテッド Method for producing norbornene-based addition polymer containing ester group or acetyl group
TWI344578B (en) * 2003-02-20 2011-07-01 Promerus Llc Dissolution rate modifiers for photoresist compositions
WO2005049668A1 (en) * 2003-11-18 2005-06-02 Jsr Corporation Novel (co)polymer, process for producing the same, and process for producing carboxylated (co)polymer
JP2006100563A (en) * 2004-09-29 2006-04-13 Sumitomo Bakelite Co Ltd Semiconductor device
JP4554665B2 (en) 2006-12-25 2010-09-29 富士フイルム株式会社 PATTERN FORMATION METHOD, POSITIVE RESIST COMPOSITION FOR MULTIPLE DEVELOPMENT USED FOR THE PATTERN FORMATION METHOD, NEGATIVE DEVELOPMENT SOLUTION USED FOR THE PATTERN FORMATION METHOD, AND NEGATIVE DEVELOPMENT RINSE SOLUTION USED FOR THE PATTERN FORMATION METHOD
US8637229B2 (en) 2006-12-25 2014-01-28 Fujifilm Corporation Pattern forming method, resist composition for multiple development used in the pattern forming method, developer for negative development used in the pattern forming method, and rinsing solution for negative development used in the pattern forming method
US8530148B2 (en) 2006-12-25 2013-09-10 Fujifilm Corporation Pattern forming method, resist composition for multiple development used in the pattern forming method, developer for negative development used in the pattern forming method, and rinsing solution for negative development used in the pattern forming method
US8034547B2 (en) 2007-04-13 2011-10-11 Fujifilm Corporation Pattern forming method, resist composition to be used in the pattern forming method, negative developing solution to be used in the pattern forming method and rinsing solution for negative development to be used in the pattern forming method
US8603733B2 (en) 2007-04-13 2013-12-10 Fujifilm Corporation Pattern forming method, and resist composition, developer and rinsing solution used in the pattern forming method
US8476001B2 (en) 2007-05-15 2013-07-02 Fujifilm Corporation Pattern forming method
JP4558064B2 (en) 2007-05-15 2010-10-06 富士フイルム株式会社 Pattern formation method
JP4617337B2 (en) 2007-06-12 2011-01-26 富士フイルム株式会社 Pattern formation method
US8632942B2 (en) 2007-06-12 2014-01-21 Fujifilm Corporation Method of forming patterns
US8617794B2 (en) 2007-06-12 2013-12-31 Fujifilm Corporation Method of forming patterns
EP2157477B1 (en) 2007-06-12 2014-08-06 FUJIFILM Corporation Use of a resist composition for negative working-type development, and method for pattern formation using the resist composition
JP4590431B2 (en) 2007-06-12 2010-12-01 富士フイルム株式会社 Pattern formation method
JP5332883B2 (en) * 2009-04-30 2013-11-06 住友ベークライト株式会社 Photosensitive composition, optical waveguide, optical wiring, opto-electric hybrid board, electronic device, and method for forming optical waveguide
JP6459192B2 (en) * 2014-03-20 2019-01-30 住友ベークライト株式会社 Photosensitive resin composition
KR102324819B1 (en) 2014-12-12 2021-11-11 삼성전자주식회사 Photoresist polymers, photoresist compositions, methods of forming patterns and methods of manufacturing semiconductor devices
KR101746789B1 (en) 2014-12-18 2017-06-13 주식회사 엘지화학 Vertical alignment layer comprising a cyclic olefin copolymer
GB201522304D0 (en) 2015-12-17 2016-02-03 Mars Inc Food product for reducing muscle breakdown

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4106943A (en) * 1973-09-27 1978-08-15 Japan Synthetic Rubber Co., Ltd. Photosensitive cross-linkable azide containing polymeric composition
US4571375A (en) * 1983-10-24 1986-02-18 Benedikt George M Ring-opened polynorbornene negative photoresist with bisazide
JP3804138B2 (en) * 1996-02-09 2006-08-02 Ｊｓｒ株式会社 Radiation sensitive resin composition for ArF excimer laser irradiation
KR100536824B1 (en) * 1996-03-07 2006-03-09 스미토모 베이클라이트 가부시키가이샤 Photoresist compositions comprising polycyclic polymers with acid labile pendant groups
KR100261022B1 (en) * 1996-10-11 2000-09-01 윤종용 Chemically amplified resist composition

Also Published As

Publication number Publication date
JP2001516804A (en) 2001-10-02
EP1021750A1 (en) 2000-07-26
KR20010023940A (en) 2001-03-26
CN1251021C (en) 2006-04-12
TWI235285B (en) 2005-07-01
RU2199773C2 (en) 2003-02-27
AU747516B2 (en) 2002-05-16
JP4416941B2 (en) 2010-02-17
CN1276884A (en) 2000-12-13
MY123980A (en) 2006-06-30
AU9219998A (en) 1999-04-05
AU747516C (en) 2003-07-24
KR100572899B1 (en) 2006-04-24
WO1999014635A1 (en) 1999-03-25
HK1030992A1 (en) 2001-05-25

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