ATE542837T1 - Polycyclische resistzusammensetzungen mit verbesserter ätzbeständigkeit - Google Patents

Polycyclische resistzusammensetzungen mit verbesserter ätzbeständigkeit

Info

Publication number
ATE542837T1
ATE542837T1 AT08170128T AT08170128T ATE542837T1 AT E542837 T1 ATE542837 T1 AT E542837T1 AT 08170128 T AT08170128 T AT 08170128T AT 08170128 T AT08170128 T AT 08170128T AT E542837 T1 ATE542837 T1 AT E542837T1
Authority
AT
Austria
Prior art keywords
polycyclic
etch resistance
resistant compositions
improved etch
cyclic
Prior art date
Application number
AT08170128T
Other languages
English (en)
Inventor
Saikumar Jayaraman
Brian L Goodall
Larry F Rhodes
Robert A Shick
Richard Vicari
Robert D Allen
Juliann Opitz
Ratnam Sooriyakumaran
Thomas Wallow
Original Assignee
Sumitomo Bakelite Co
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Bakelite Co, Ibm filed Critical Sumitomo Bakelite Co
Application granted granted Critical
Publication of ATE542837T1 publication Critical patent/ATE542837T1/de

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F232/00Copolymers of cyclic compounds containing no unsaturated aliphatic radicals in a side chain, and having one or more carbon-to-carbon double bonds in a carbocyclic ring system
    • C08F232/08Copolymers of cyclic compounds containing no unsaturated aliphatic radicals in a side chain, and having one or more carbon-to-carbon double bonds in a carbocyclic ring system having condensed rings
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G61/00Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
    • C08G61/02Macromolecular compounds containing only carbon atoms in the main chain of the macromolecule, e.g. polyxylylenes
    • C08G61/04Macromolecular compounds containing only carbon atoms in the main chain of the macromolecule, e.g. polyxylylenes only aliphatic carbon atoms
    • C08G61/06Macromolecular compounds containing only carbon atoms in the main chain of the macromolecule, e.g. polyxylylenes only aliphatic carbon atoms prepared by ring-opening of carbocyclic compounds
    • C08G61/08Macromolecular compounds containing only carbon atoms in the main chain of the macromolecule, e.g. polyxylylenes only aliphatic carbon atoms prepared by ring-opening of carbocyclic compounds of carbocyclic compounds containing one or more carbon-to-carbon double bonds in the ring
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/0045Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/038Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0382Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/039Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055Radiation sensitive composition or product or process of making
    • Y10S430/114Initiator containing
    • Y10S430/115Cationic or anionic

Landscapes

  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Medicinal Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Materials For Photolithography (AREA)
  • Polyethers (AREA)
  • Polymerisation Methods In General (AREA)
  • Organic Insulating Materials (AREA)
  • Polymerization Catalysts (AREA)
  • Polyoxymethylene Polymers And Polymers With Carbon-To-Carbon Bonds (AREA)
  • Drying Of Semiconductors (AREA)
AT08170128T 1998-02-23 1999-02-19 Polycyclische resistzusammensetzungen mit verbesserter ätzbeständigkeit ATE542837T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US7555798P 1998-02-23 1998-02-23

Publications (1)

Publication Number Publication Date
ATE542837T1 true ATE542837T1 (de) 2012-02-15

Family

ID=22126530

Family Applications (1)

Application Number Title Priority Date Filing Date
AT08170128T ATE542837T1 (de) 1998-02-23 1999-02-19 Polycyclische resistzusammensetzungen mit verbesserter ätzbeständigkeit

Country Status (11)

Country Link
US (2) US6147177A (de)
EP (2) EP1058699A1 (de)
JP (2) JP2002504573A (de)
KR (1) KR100617354B1 (de)
CN (1) CN1223615C (de)
AT (1) ATE542837T1 (de)
AU (1) AU3303599A (de)
ID (1) ID26627A (de)
MY (1) MY133442A (de)
TW (1) TWI250384B (de)
WO (1) WO1999042502A1 (de)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6232417B1 (en) * 1996-03-07 2001-05-15 The B. F. Goodrich Company Photoresist compositions comprising polycyclic polymers with acid labile pendant groups
US6451945B1 (en) * 1998-02-23 2002-09-17 The B.F. Goodrich Company Modified polycyclic polymers
WO2000001684A1 (en) * 1998-07-03 2000-01-13 Nec Corporation (meth)acrylate derivatives bearing lactone structure, polymers, photoresist compositions and process of forming patterns with the same
KR20000015014A (ko) * 1998-08-26 2000-03-15 김영환 신규의 포토레지스트용 단량체, 중합체 및 이를 이용한 포토레지스트 조성물
KR100441734B1 (ko) * 1998-11-02 2004-08-04 신에쓰 가가꾸 고교 가부시끼가이샤 신규한 에스테르 화합물, 고분자 화합물, 레지스트 재료및 패턴 형성 방법
JP5095048B2 (ja) * 1999-11-15 2012-12-12 信越化学工業株式会社 高分子化合物、レジスト材料及びパターン形成方法
KR100596873B1 (ko) * 2000-07-13 2006-07-04 주식회사 하이닉스반도체 Tips용 포토레지스트 조성물
WO2002021211A2 (en) * 2000-09-08 2002-03-14 Shipley Company, L.L.C. Polymers and photoresist compositions for short wavelength imaging
KR20030087190A (ko) * 2002-05-07 2003-11-14 삼성전자주식회사 감광성 폴리머 및 이를 포함하는 레지스트 조성물
CN100346229C (zh) * 2002-09-30 2007-10-31 日本瑞翁株式会社 放射线敏感性树脂组合物、树脂图案膜及其形成方法以及树脂图案膜的应用
US6756180B2 (en) 2002-10-22 2004-06-29 International Business Machines Corporation Cyclic olefin-based resist compositions having improved image stability
US7157523B2 (en) 2002-11-14 2007-01-02 Jsr Corporation Ring-opened polynorbornenes
TWI295410B (en) * 2002-11-29 2008-04-01 Zeon Corp Radiation-sensitive resin composition
US7674847B2 (en) * 2003-02-21 2010-03-09 Promerus Llc Vinyl addition polycyclic olefin polymers prepared with non-olefinic chain transfer agents and uses thereof
US7402642B2 (en) * 2003-12-23 2008-07-22 Exxonmobil Research And Engineering Company Linear functional copolymers of ethylene with precise and minimum run length distributions and method of making thereof
US7101654B2 (en) * 2004-01-14 2006-09-05 Promerus Llc Norbornene-type monomers and polymers containing pendent lactone or sultone groups
US20050192409A1 (en) * 2004-02-13 2005-09-01 Rhodes Larry F. Polymers of polycyclic olefins having a polyhedral oligosilsesquioxane pendant group and uses thereof
FR2871803B1 (fr) * 2004-06-21 2007-05-11 Centre Nat Rech Scient Cnrse Particules polymeres stimulables presentant des fonctions reactives, leur procede d'obtention, et leurs utilisations
JP2008031319A (ja) * 2006-07-28 2008-02-14 Fujifilm Corp ノルボルネン系重合体、フィルム、偏光板および液晶表示装置
US7727705B2 (en) * 2007-02-23 2010-06-01 Fujifilm Electronic Materials, U.S.A., Inc. High etch resistant underlayer compositions for multilayer lithographic processes
JP5017227B2 (ja) * 2008-09-26 2012-09-05 富士フイルム株式会社 ノルボルネン系付加重合体、それを用いた光学材料
US8753790B2 (en) * 2009-07-01 2014-06-17 Promerus, Llc Self-imageable film forming polymer, compositions thereof and devices and structures made therefrom
JP5692232B2 (ja) * 2010-08-27 2015-04-01 住友ベークライト株式会社 フォトレジスト用樹脂組成物
EP2643371B1 (de) * 2010-11-24 2014-04-02 Promerus, LLC Selbst abbildbares folienbildendes polymer, zusammensetzungen davon und vorrichtungen und strukturen daraus
KR101496976B1 (ko) * 2011-07-14 2015-03-02 스미토모 베이클리트 컴퍼니 리미티드 화학 방사선에 대한 이미지-와이즈 노광 후에 패턴화된 층을 형성하는 중합체 및 이의 조성물
US8703391B1 (en) * 2011-11-29 2014-04-22 Sandia Corporation Polymeric matrix materials for infrared metamaterials
JP6065862B2 (ja) * 2013-04-10 2017-01-25 信越化学工業株式会社 パターン形成方法、レジスト組成物、高分子化合物及び単量体
US9772558B2 (en) 2013-09-24 2017-09-26 International Business Machines Corporation Sulfonic acid ester containing polymers for organic solvent based dual-tone photoresists
JP2016145268A (ja) * 2015-02-06 2016-08-12 株式会社カネカ 重合体の製造方法

Family Cites Families (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50159598A (de) * 1974-06-18 1975-12-24
JPS50160400A (de) * 1974-06-19 1975-12-25
US4250053A (en) 1979-05-21 1981-02-10 Minnesota Mining And Manufacturing Company Sensitized aromatic iodonium or aromatic sulfonium salt photoinitiator systems
US4355148A (en) * 1980-09-18 1982-10-19 The B. F. Goodrich Company Norbornene polymers containing bound phenolic antioxidant
US4371605A (en) 1980-12-09 1983-02-01 E. I. Du Pont De Nemours And Company Photopolymerizable compositions containing N-hydroxyamide and N-hydroxyimide sulfonates
US4491628A (en) 1982-08-23 1985-01-01 International Business Machines Corporation Positive- and negative-working resist compositions with acid generating photoinitiator and polymer with acid labile groups pendant from polymer backbone
JPH0778114B2 (ja) * 1987-04-08 1995-08-23 帝人株式会社 架橋重合体成型物の製造方法および反応性溶液の組合せ
EP0317262B1 (de) 1987-11-17 1996-01-31 Japan Synthetic Rubber Co., Ltd. Transparentes Harzmaterial
JPH0463810A (ja) * 1990-07-03 1992-02-28 Kuraray Co Ltd アクリル―ノルボルネン系共重合体およびその製造法
US5017727A (en) * 1990-07-10 1991-05-21 Copolymer Rubber & Chemical Corporation Polymerizable antioxidant composition
EP0695733A1 (de) * 1990-07-10 1996-02-07 Dsm N.V. Gebundenes Antioxydans enthaltende Olefinpolymere
JP3060532B2 (ja) 1990-11-30 2000-07-10 ジェイエスアール株式会社 開環重合体水素化物の製造方法
DE69322946T2 (de) 1992-11-03 1999-08-12 International Business Machines Corp., Armonk, N.Y. Photolackzusammensetzung
CA2173495A1 (en) 1993-10-06 1995-04-13 Kenneth W. Culver Treatment of tumors by genetic transformation of tumor cells with genes encoding negative selective markers and cytokines
JP3403469B2 (ja) * 1993-10-19 2003-05-06 ダイセル化学工業株式会社 光学活性なノルボルネン誘導体の重合体及び光学分割剤
US5468819A (en) 1993-11-16 1995-11-21 The B.F. Goodrich Company Process for making polymers containing a norbornene repeating unit by addition polymerization using an organo (nickel or palladium) complex
US5705503A (en) * 1995-05-25 1998-01-06 Goodall; Brian Leslie Addition polymers of polycycloolefins containing functional substituents
JP3804138B2 (ja) * 1996-02-09 2006-08-02 Jsr株式会社 ArFエキシマレーザー照射用感放射線性樹脂組成物
JP3691897B2 (ja) * 1996-03-07 2005-09-07 富士通株式会社 レジスト材料及びレジストパターンの形成方法
CN1198181C (zh) * 1996-03-07 2005-04-20 住友电木株式会社 包括具有酸不稳定侧基的多环聚合物的光刻胶组合物
US5843624A (en) * 1996-03-08 1998-12-01 Lucent Technologies Inc. Energy-sensitive resist material and a process for device fabrication using an energy-sensitive resist material
DE19718288A1 (de) * 1996-05-03 1997-11-27 Ciba Geigy Ag Stabilisierte Zusammensetzung und polymere Antioxidantien
US6187504B1 (en) * 1996-12-19 2001-02-13 Jsr Corporation Radiation sensitive resin composition
KR100265597B1 (ko) * 1996-12-30 2000-09-15 김영환 Arf 감광막 수지 및 그 제조방법
US6103445A (en) * 1997-03-07 2000-08-15 Board Of Regents, The University Of Texas System Photoresist compositions comprising norbornene derivative polymers with acid labile groups
EP1021750A1 (de) * 1997-09-12 2000-07-26 The B.F. Goodrich Company Fotoresist-zusammensetzungen die polyzyklische polymere mit säurelabilen gruppen enthalten
JP4034896B2 (ja) * 1997-11-19 2008-01-16 松下電器産業株式会社 レジスト組成物及びこれを用いたパターン形成方法
JPH11263754A (ja) * 1997-11-19 1999-09-28 Wako Pure Chem Ind Ltd 新規なモノマー及びこれを用いて得られるポリマー
US6451945B1 (en) * 1998-02-23 2002-09-17 The B.F. Goodrich Company Modified polycyclic polymers

Also Published As

Publication number Publication date
EP2045275A2 (de) 2009-04-08
TWI250384B (en) 2006-03-01
US6451499B1 (en) 2002-09-17
EP2045275B1 (de) 2012-01-25
EP1058699A1 (de) 2000-12-13
CN1292002A (zh) 2001-04-18
US6147177A (en) 2000-11-14
CN1223615C (zh) 2005-10-19
MY133442A (en) 2007-11-30
JP2009235414A (ja) 2009-10-15
JP2002504573A (ja) 2002-02-12
ID26627A (id) 2001-01-25
HK1035199A1 (en) 2001-11-16
EP2045275A3 (de) 2009-07-29
KR20010041216A (ko) 2001-05-15
KR100617354B1 (ko) 2006-08-31
AU3303599A (en) 1999-09-06
WO1999042502A1 (en) 1999-08-26

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