JP5222636B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

Info

Publication number
JP5222636B2
JP5222636B2 JP2008168841A JP2008168841A JP5222636B2 JP 5222636 B2 JP5222636 B2 JP 5222636B2 JP 2008168841 A JP2008168841 A JP 2008168841A JP 2008168841 A JP2008168841 A JP 2008168841A JP 5222636 B2 JP5222636 B2 JP 5222636B2
Authority
JP
Japan
Prior art keywords
layer
conductive layer
semiconductor
region
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2008168841A
Other languages
English (en)
Japanese (ja)
Other versions
JP2009033145A (ja
JP2009033145A5 (OSRAM
Inventor
肇 木村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2008168841A priority Critical patent/JP5222636B2/ja
Publication of JP2009033145A publication Critical patent/JP2009033145A/ja
Publication of JP2009033145A5 publication Critical patent/JP2009033145A5/ja
Application granted granted Critical
Publication of JP5222636B2 publication Critical patent/JP5222636B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0214—Manufacture or treatment of multiple TFTs using temporary substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0241—Manufacture or treatment of multiple TFTs using liquid deposition, e.g. printing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/471—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having different architectures, e.g. having both top-gate and bottom-gate TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices

Landscapes

  • Thin Film Transistor (AREA)
  • Electroluminescent Light Sources (AREA)
  • Liquid Crystal (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Dram (AREA)
  • Shift Register Type Memory (AREA)
JP2008168841A 2007-06-29 2008-06-27 半導体装置の作製方法 Active JP5222636B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008168841A JP5222636B2 (ja) 2007-06-29 2008-06-27 半導体装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2007173311 2007-06-29
JP2007173311 2007-06-29
JP2008168841A JP5222636B2 (ja) 2007-06-29 2008-06-27 半導体装置の作製方法

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP2010023770A Division JP5292330B2 (ja) 2007-06-29 2010-02-05 半導体装置
JP2013047801A Division JP5684308B2 (ja) 2007-06-29 2013-03-11 半導体装置

Publications (3)

Publication Number Publication Date
JP2009033145A JP2009033145A (ja) 2009-02-12
JP2009033145A5 JP2009033145A5 (OSRAM) 2011-06-02
JP5222636B2 true JP5222636B2 (ja) 2013-06-26

Family

ID=40159950

Family Applications (15)

Application Number Title Priority Date Filing Date
JP2008168841A Active JP5222636B2 (ja) 2007-06-29 2008-06-27 半導体装置の作製方法
JP2010023770A Expired - Fee Related JP5292330B2 (ja) 2007-06-29 2010-02-05 半導体装置
JP2013047801A Expired - Fee Related JP5684308B2 (ja) 2007-06-29 2013-03-11 半導体装置
JP2015004652A Withdrawn JP2015111706A (ja) 2007-06-29 2015-01-14 半導体装置
JP2016205626A Withdrawn JP2017034275A (ja) 2007-06-29 2016-10-20 表示装置
JP2018080320A Active JP6642950B2 (ja) 2007-06-29 2018-04-19 表示装置
JP2019104399A Active JP6756012B2 (ja) 2007-06-29 2019-06-04 表示装置
JP2020000039A Active JP6756060B2 (ja) 2007-06-29 2020-01-05 表示装置
JP2020142676A Expired - Fee Related JP6838191B2 (ja) 2007-06-29 2020-08-26 表示装置
JP2020142549A Withdrawn JP2021005091A (ja) 2007-06-29 2020-08-26 表示装置
JP2021092972A Active JP6978625B2 (ja) 2007-06-29 2021-06-02 表示装置
JP2021205781A Active JP7129539B2 (ja) 2007-06-29 2021-12-20 表示装置
JP2022131735A Active JP7293473B2 (ja) 2007-06-29 2022-08-22 表示装置
JP2023094161A Active JP7584571B2 (ja) 2007-06-29 2023-06-07 表示装置
JP2024193695A Active JP7739574B2 (ja) 2007-06-29 2024-11-05 表示装置

Family Applications After (14)

Application Number Title Priority Date Filing Date
JP2010023770A Expired - Fee Related JP5292330B2 (ja) 2007-06-29 2010-02-05 半導体装置
JP2013047801A Expired - Fee Related JP5684308B2 (ja) 2007-06-29 2013-03-11 半導体装置
JP2015004652A Withdrawn JP2015111706A (ja) 2007-06-29 2015-01-14 半導体装置
JP2016205626A Withdrawn JP2017034275A (ja) 2007-06-29 2016-10-20 表示装置
JP2018080320A Active JP6642950B2 (ja) 2007-06-29 2018-04-19 表示装置
JP2019104399A Active JP6756012B2 (ja) 2007-06-29 2019-06-04 表示装置
JP2020000039A Active JP6756060B2 (ja) 2007-06-29 2020-01-05 表示装置
JP2020142676A Expired - Fee Related JP6838191B2 (ja) 2007-06-29 2020-08-26 表示装置
JP2020142549A Withdrawn JP2021005091A (ja) 2007-06-29 2020-08-26 表示装置
JP2021092972A Active JP6978625B2 (ja) 2007-06-29 2021-06-02 表示装置
JP2021205781A Active JP7129539B2 (ja) 2007-06-29 2021-12-20 表示装置
JP2022131735A Active JP7293473B2 (ja) 2007-06-29 2022-08-22 表示装置
JP2023094161A Active JP7584571B2 (ja) 2007-06-29 2023-06-07 表示装置
JP2024193695A Active JP7739574B2 (ja) 2007-06-29 2024-11-05 表示装置

Country Status (4)

Country Link
US (7) US8354674B2 (OSRAM)
JP (15) JP5222636B2 (OSRAM)
CN (2) CN102543865B (OSRAM)
TW (2) TWI466235B (OSRAM)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20130038936A (ko) * 2010-07-27 2013-04-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법

Families Citing this family (253)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8354674B2 (en) * 2007-06-29 2013-01-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device wherein a property of a first semiconductor layer is different from a property of a second semiconductor layer
US8334537B2 (en) * 2007-07-06 2012-12-18 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device
TWI456663B (zh) 2007-07-20 2014-10-11 Semiconductor Energy Lab 顯示裝置之製造方法
KR101484297B1 (ko) * 2007-08-31 2015-01-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시장치 및 표시장치의 제작방법
CN101656769B (zh) * 2008-08-22 2012-10-10 清华大学 移动电话
TWI371223B (en) * 2008-02-20 2012-08-21 Chimei Innolux Corp Organic light emitting display device and fabrications thereof and electronic device
TW201023341A (en) * 2008-12-12 2010-06-16 Ind Tech Res Inst Integrated circuit structure
WO2010078297A1 (en) 2008-12-30 2010-07-08 Greatpoint Energy, Inc. Processes for preparing a catalyzed carbonaceous particulate
US8174021B2 (en) * 2009-02-06 2012-05-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the semiconductor device
WO2010093703A1 (en) * 2009-02-10 2010-08-19 Applied Nanotech Holdings, Inc. Electrochromic device
US8278657B2 (en) * 2009-02-13 2012-10-02 Semiconductor Energy Laboratory Co., Ltd. Transistor, semiconductor device including the transistor, and manufacturing method of the transistor and the semiconductor device
US9047815B2 (en) 2009-02-27 2015-06-02 Semiconductor Energy Laboratory Co., Ltd. Method for driving semiconductor device
KR101681884B1 (ko) * 2009-03-27 2016-12-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치, 표시장치 및 전자기기
TWI529942B (zh) * 2009-03-27 2016-04-11 半導體能源研究所股份有限公司 半導體裝置
EP2256814B1 (en) * 2009-05-29 2019-01-16 Semiconductor Energy Laboratory Co, Ltd. Oxide semiconductor device and method for manufacturing the same
KR101645146B1 (ko) 2009-06-30 2016-08-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 제조 방법
KR101805335B1 (ko) 2009-06-30 2017-12-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 표시 장치, 및 전자 장비
WO2011001881A1 (en) 2009-06-30 2011-01-06 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
KR102798889B1 (ko) 2009-07-10 2025-04-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 액정 표시 장치의 제작 방법
KR101642620B1 (ko) * 2009-07-10 2016-07-25 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제조 방법
KR101073301B1 (ko) 2009-07-15 2011-10-12 삼성모바일디스플레이주식회사 유기 전계발광 표시장치 및 그 제조방법
WO2011010542A1 (en) * 2009-07-23 2011-01-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR102097932B1 (ko) * 2009-07-31 2020-04-06 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 디바이스 및 그 형성 방법
TWI634642B (zh) * 2009-08-07 2018-09-01 半導體能源研究所股份有限公司 半導體裝置和其製造方法
TWI596741B (zh) * 2009-08-07 2017-08-21 半導體能源研究所股份有限公司 半導體裝置和其製造方法
JP5672678B2 (ja) * 2009-08-21 2015-02-18 Tdk株式会社 電子部品及びその製造方法
US8115883B2 (en) * 2009-08-27 2012-02-14 Semiconductor Energy Laboratory Co., Ltd. Display device and method for manufacturing the same
KR101073542B1 (ko) * 2009-09-03 2011-10-17 삼성모바일디스플레이주식회사 유기 발광 표시 장치 및 그 제조 방법
KR102775255B1 (ko) 2009-09-04 2025-03-06 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 장치 및 발광 장치를 제작하기 위한 방법
KR101746198B1 (ko) 2009-09-04 2017-06-12 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시장치 및 전자기기
WO2011033911A1 (en) * 2009-09-16 2011-03-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
KR20210048590A (ko) 2009-09-16 2021-05-03 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR101519893B1 (ko) * 2009-09-16 2015-05-14 가부시키가이샤 한도오따이 에네루기 켄큐쇼 트랜지스터
KR102236140B1 (ko) * 2009-09-16 2021-04-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 장치 및 이의 제조 방법
CN102024410B (zh) 2009-09-16 2014-10-22 株式会社半导体能源研究所 半导体装置及电子设备
KR102180761B1 (ko) 2009-09-24 2020-11-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 산화물 반도체막 및 반도체 장치
WO2011037050A1 (en) * 2009-09-24 2011-03-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
KR20130026404A (ko) * 2009-09-24 2013-03-13 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 제조 방법
KR101790704B1 (ko) 2009-10-09 2017-11-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 시프트 레지스터 및 표시 장치
KR101396096B1 (ko) * 2009-10-09 2014-05-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제조 방법
CN107195328B (zh) 2009-10-09 2020-11-10 株式会社半导体能源研究所 移位寄存器和显示装置以及其驱动方法
KR101915251B1 (ko) * 2009-10-16 2018-11-06 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
EP2491585B1 (en) * 2009-10-21 2020-01-22 Semiconductor Energy Laboratory Co. Ltd. Semiconductor device
CN104485336B (zh) * 2009-10-21 2018-01-02 株式会社半导体能源研究所 半导体器件
KR20170130641A (ko) * 2009-10-21 2017-11-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 액정 표시 장치 및 그 액정 표시 장치를 구비하는 전자기기
CN102576734B (zh) 2009-10-21 2015-04-22 株式会社半导体能源研究所 显示装置和包括显示装置的电子设备
SG10201910510UA (en) * 2009-10-29 2020-01-30 Semiconductor Energy Lab Semiconductor device
KR20250075719A (ko) * 2009-10-30 2025-05-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR101788521B1 (ko) 2009-10-30 2017-10-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR101499494B1 (ko) * 2009-10-30 2015-03-06 가부시키가이샤 한도오따이 에네루기 켄큐쇼 논리 회로 및 반도체 장치
WO2011052385A1 (en) 2009-10-30 2011-05-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR101932407B1 (ko) 2009-11-06 2018-12-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
WO2011055669A1 (en) 2009-11-06 2011-05-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
CN102612749B (zh) 2009-11-06 2015-04-01 株式会社半导体能源研究所 半导体器件
KR102072118B1 (ko) * 2009-11-13 2020-01-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치 및 이 표시 장치를 구비한 전자 기기
KR101893332B1 (ko) * 2009-11-13 2018-08-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 구동 방법
KR101928723B1 (ko) 2009-11-20 2018-12-13 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
MY166309A (en) 2009-11-20 2018-06-25 Semiconductor Energy Lab Nonvolatile latch circuit and logic circuit, and semiconductor device using the same
KR101708607B1 (ko) * 2009-11-20 2017-02-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
WO2011065183A1 (en) * 2009-11-24 2011-06-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including memory cell
KR102446585B1 (ko) * 2009-11-27 2022-09-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작방법
KR101911382B1 (ko) * 2009-11-27 2018-10-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR102010752B1 (ko) 2009-12-04 2019-08-14 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
CN102648526B (zh) 2009-12-04 2015-08-05 株式会社半导体能源研究所 半导体器件及其制造方法
CN102714180B (zh) 2009-12-11 2015-03-25 株式会社半导体能源研究所 非易失性锁存电路和逻辑电路以及使用它们的半导体器件
CN102656683B (zh) 2009-12-11 2015-02-11 株式会社半导体能源研究所 半导体装置
JP5727204B2 (ja) 2009-12-11 2015-06-03 株式会社半導体エネルギー研究所 半導体装置の作製方法
EP2513971A1 (de) * 2009-12-18 2012-10-24 Basf Se Metalloxid-feldeffekttransistoren auf mechanisch flexiblem polymersubstrat mit aus lösung prozessierbarem dielektrikum bei niedrigen temperaturen
WO2011074392A1 (en) 2009-12-18 2011-06-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
CN105789204B (zh) * 2009-12-25 2021-11-02 株式会社半导体能源研究所 半导体装置
CN103985760B (zh) 2009-12-25 2017-07-18 株式会社半导体能源研究所 半导体装置
EP2517355B1 (en) * 2009-12-25 2019-05-08 Semiconductor Energy Laboratory Co., Ltd. Memory device, semiconductor device, and electronic device
CN102714184B (zh) 2009-12-28 2016-05-18 株式会社半导体能源研究所 半导体器件
CN105353551A (zh) * 2009-12-28 2016-02-24 株式会社半导体能源研究所 液晶显示装置及电子设备
KR101842413B1 (ko) 2009-12-28 2018-03-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR102198144B1 (ko) 2009-12-28 2021-01-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 기억 장치와 반도체 장치
US8780629B2 (en) * 2010-01-15 2014-07-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
WO2011086847A1 (en) 2010-01-15 2011-07-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8415731B2 (en) 2010-01-20 2013-04-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor storage device with integrated capacitor and having transistor overlapping sections
WO2011089852A1 (en) 2010-01-22 2011-07-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device and driving method thereof
US8879010B2 (en) 2010-01-24 2014-11-04 Semiconductor Energy Laboratory Co., Ltd. Display device
KR101893904B1 (ko) * 2010-01-29 2018-08-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 기억 장치
TWI444323B (zh) * 2010-02-03 2014-07-11 Prime View Int Co Ltd 驅動元件及驅動元件陣列排列
WO2011096270A1 (en) 2010-02-05 2011-08-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2011096277A1 (en) 2010-02-05 2011-08-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of driving semiconductor device
KR101926336B1 (ko) 2010-02-05 2019-03-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
WO2011096264A1 (en) * 2010-02-05 2011-08-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of driving semiconductor device
KR101399610B1 (ko) 2010-02-05 2014-05-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 및 반도체 장치의 제조 방법
WO2011099389A1 (en) 2010-02-12 2011-08-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method of the same
KR101775180B1 (ko) * 2010-02-12 2017-09-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 구동 방법
WO2011102205A1 (en) * 2010-02-19 2011-08-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2011102206A1 (en) * 2010-02-19 2011-08-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device, driving method thereof, and method for manufacturing semiconductor device
WO2011105310A1 (en) 2010-02-26 2011-09-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
CN105553462B (zh) 2010-03-02 2019-12-13 株式会社半导体能源研究所 脉冲信号输出电路和移位寄存器
KR101798645B1 (ko) 2010-03-02 2017-11-16 가부시키가이샤 한도오따이 에네루기 켄큐쇼 펄스 신호 출력 회로 및 시프트 레지스터
KR101932909B1 (ko) 2010-03-04 2018-12-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 메모리 장치 및 반도체 장치
WO2011114866A1 (en) 2010-03-17 2011-09-22 Semiconductor Energy Laboratory Co., Ltd. Memory device and semiconductor device
KR101840797B1 (ko) 2010-03-19 2018-03-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 메모리 장치
WO2011118741A1 (en) * 2010-03-26 2011-09-29 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
WO2011125432A1 (en) 2010-04-07 2011-10-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device
US8575620B2 (en) 2010-05-13 2013-11-05 Sharp Kabushiki Kaisha Circuit board and display device
TWI511236B (zh) 2010-05-14 2015-12-01 Semiconductor Energy Lab 半導體裝置
JP5923248B2 (ja) 2010-05-20 2016-05-24 株式会社半導体エネルギー研究所 半導体装置
JP5852793B2 (ja) * 2010-05-21 2016-02-03 株式会社半導体エネルギー研究所 液晶表示装置の作製方法
JP5714973B2 (ja) 2010-05-21 2015-05-07 株式会社半導体エネルギー研究所 半導体装置
WO2011145468A1 (en) 2010-05-21 2011-11-24 Semiconductor Energy Laboratory Co., Ltd. Memory device and semiconductor device
KR101830193B1 (ko) 2010-07-02 2018-02-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
WO2012002186A1 (en) 2010-07-02 2012-01-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US20120001179A1 (en) * 2010-07-02 2012-01-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR101272373B1 (ko) * 2010-07-09 2013-06-07 가시오게산키 가부시키가이샤 트랜지스터 구조체 및 발광 장치
KR101850567B1 (ko) 2010-07-16 2018-04-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
JP5846789B2 (ja) 2010-07-29 2016-01-20 株式会社半導体エネルギー研究所 半導体装置
TWI438868B (zh) 2010-07-30 2014-05-21 Au Optronics Corp 互補金氧半電晶體及其製作方法
US8792284B2 (en) 2010-08-06 2014-07-29 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor memory device
TWI555128B (zh) 2010-08-06 2016-10-21 半導體能源研究所股份有限公司 半導體裝置及半導體裝置的驅動方法
US8582348B2 (en) 2010-08-06 2013-11-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for driving semiconductor device
US8422272B2 (en) 2010-08-06 2013-04-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
TWI605549B (zh) 2010-08-06 2017-11-11 半導體能源研究所股份有限公司 半導體裝置
KR102006586B1 (ko) * 2010-08-06 2019-08-01 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US8508276B2 (en) 2010-08-25 2013-08-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including latch circuit
US8854220B1 (en) * 2010-08-30 2014-10-07 Exelis, Inc. Indicating desiccant in night vision goggles
JP5702689B2 (ja) 2010-08-31 2015-04-15 株式会社半導体エネルギー研究所 半導体装置の駆動方法、及び半導体装置
US8634228B2 (en) 2010-09-02 2014-01-21 Semiconductor Energy Laboratory Co., Ltd. Driving method of semiconductor device
KR101851817B1 (ko) 2010-09-03 2018-04-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 구동 방법
US8786815B2 (en) 2010-09-07 2014-07-22 Au Optronics Corporation Driving circuit and display panel having the same
US8520426B2 (en) 2010-09-08 2013-08-27 Semiconductor Energy Laboratory Co., Ltd. Method for driving semiconductor device
JP2012256821A (ja) 2010-09-13 2012-12-27 Semiconductor Energy Lab Co Ltd 記憶装置
TWI543166B (zh) 2010-09-13 2016-07-21 半導體能源研究所股份有限公司 半導體裝置
US8871565B2 (en) * 2010-09-13 2014-10-28 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
TWI670711B (zh) * 2010-09-14 2019-09-01 日商半導體能源研究所股份有限公司 記憶體裝置和半導體裝置
TW201218367A (en) 2010-09-14 2012-05-01 Casio Computer Co Ltd Transistor structure, manufacturing method of transistor structure, and light emitting apparatus
TWI574259B (zh) 2010-09-29 2017-03-11 半導體能源研究所股份有限公司 半導體記憶體裝置和其驅動方法
KR101952456B1 (ko) * 2010-10-29 2019-02-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 기억 장치
CN102466937B (zh) 2010-10-29 2014-10-22 北京京东方光电科技有限公司 Tft-lcd、驱动器件及其制造方法
WO2012060202A1 (en) * 2010-11-05 2012-05-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8902637B2 (en) * 2010-11-08 2014-12-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device comprising inverting amplifier circuit and driving method thereof
WO2012073844A1 (en) 2010-12-03 2012-06-07 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor film and semiconductor device
JP5908263B2 (ja) * 2010-12-03 2016-04-26 株式会社半導体エネルギー研究所 Ｄｃ−ｄｃコンバータ
KR101680768B1 (ko) * 2010-12-10 2016-11-29 삼성전자주식회사 트랜지스터 및 이를 포함하는 전자장치
JP2012142562A (ja) 2010-12-17 2012-07-26 Semiconductor Energy Lab Co Ltd 半導体記憶装置
JP5973165B2 (ja) * 2010-12-28 2016-08-23 株式会社半導体エネルギー研究所 半導体装置
JP2012151453A (ja) 2010-12-28 2012-08-09 Semiconductor Energy Lab Co Ltd 半導体装置および半導体装置の駆動方法
JP5852874B2 (ja) 2010-12-28 2016-02-03 株式会社半導体エネルギー研究所 半導体装置
JP5993141B2 (ja) 2010-12-28 2016-09-14 株式会社半導体エネルギー研究所 記憶装置
US9443984B2 (en) * 2010-12-28 2016-09-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
TWI562142B (en) * 2011-01-05 2016-12-11 Semiconductor Energy Lab Co Ltd Storage element, storage device, and signal processing circuit
US8421071B2 (en) 2011-01-13 2013-04-16 Semiconductor Energy Laboratory Co., Ltd. Memory device
KR102026718B1 (ko) 2011-01-14 2019-09-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 기억장치, 반도체 장치, 검출 방법
JP5798933B2 (ja) * 2011-01-26 2015-10-21 株式会社半導体エネルギー研究所 信号処理回路
WO2012102314A1 (en) * 2011-01-28 2012-08-02 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device and semiconductor device
WO2012102281A1 (en) 2011-01-28 2012-08-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8629445B2 (en) 2011-02-21 2014-01-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, manufacturing method thereof, and electronic appliance
TWI567735B (zh) 2011-03-31 2017-01-21 半導體能源研究所股份有限公司 記憶體電路，記憶體單元，及訊號處理電路
JP6019329B2 (ja) * 2011-03-31 2016-11-02 株式会社Ｊｏｌｅｄ 表示装置および電子機器
JP5946683B2 (ja) 2011-04-22 2016-07-06 株式会社半導体エネルギー研究所 半導体装置
US8729545B2 (en) 2011-04-28 2014-05-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device
TWI743509B (zh) 2011-05-05 2021-10-21 日商半導體能源研究所股份有限公司 半導體裝置及其製造方法
US9443844B2 (en) 2011-05-10 2016-09-13 Semiconductor Energy Laboratory Co., Ltd. Gain cell semiconductor memory device and driving method thereof
TWI422039B (zh) * 2011-05-11 2014-01-01 Au Optronics Corp 薄膜電晶體元件及其製作方法
KR101849268B1 (ko) 2011-05-13 2018-04-18 한국전자통신연구원 빛과 전압 스트레스에 강한 산화물 박막 트랜지스터 및 그의 제조 방법
KR102081792B1 (ko) 2011-05-19 2020-02-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 연산회로 및 연산회로의 구동방법
JP6013682B2 (ja) 2011-05-20 2016-10-25 株式会社半導体エネルギー研究所 半導体装置の駆動方法
KR101851567B1 (ko) * 2011-07-04 2018-04-25 삼성전자주식회사 트랜지스터, 트랜지스터를 포함하는 전자소자 및 이들의 제조방법
TWI464869B (zh) 2011-07-14 2014-12-11 Au Optronics Corp 半導體元件及電致發光元件及其製作方法
US8718224B2 (en) 2011-08-05 2014-05-06 Semiconductor Energy Laboratory Co., Ltd. Pulse signal output circuit and shift register
TWI419336B (zh) 2011-08-26 2013-12-11 Au Optronics Corp 半導體元件及其製作方法
US9252279B2 (en) * 2011-08-31 2016-02-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
SG11201505088UA (en) 2011-09-29 2015-08-28 Semiconductor Energy Lab Semiconductor device
US9117916B2 (en) 2011-10-13 2015-08-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising oxide semiconductor film
WO2013054933A1 (en) 2011-10-14 2013-04-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR20130040706A (ko) 2011-10-14 2013-04-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
US20130109124A1 (en) * 2011-10-28 2013-05-02 General Electric Company Methods of making a transparent layer and a photovoltaic device
US8962386B2 (en) 2011-11-25 2015-02-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP6081171B2 (ja) 2011-12-09 2017-02-15 株式会社半導体エネルギー研究所 記憶装置
US10002968B2 (en) 2011-12-14 2018-06-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device including the same
JP6041707B2 (ja) 2012-03-05 2016-12-14 株式会社半導体エネルギー研究所 ラッチ回路および半導体装置
CN107340509B (zh) * 2012-03-09 2020-04-14 株式会社半导体能源研究所 半导体装置的驱动方法
US9058892B2 (en) 2012-03-14 2015-06-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and shift register
US9208849B2 (en) 2012-04-12 2015-12-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for driving semiconductor device, and electronic device
KR102254731B1 (ko) 2012-04-13 2021-05-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR101925344B1 (ko) * 2012-05-10 2018-12-05 리쿠아비스타 비.브이. 전기 습윤 표시장치
US8873308B2 (en) 2012-06-29 2014-10-28 Semiconductor Energy Laboratory Co., Ltd. Signal processing circuit
KR101989001B1 (ko) 2012-09-07 2019-06-14 삼성디스플레이 주식회사 표시 장치
TWI600157B (zh) 2012-11-16 2017-09-21 半導體能源研究所股份有限公司 半導體裝置
JP2014142986A (ja) 2012-12-26 2014-08-07 Semiconductor Energy Lab Co Ltd 半導体装置
KR102222344B1 (ko) * 2013-05-02 2021-03-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
JP2014239201A (ja) * 2013-05-08 2014-12-18 ソニー株式会社 半導体装置、アンテナスイッチ回路、および無線通信装置
JP6516978B2 (ja) 2013-07-17 2019-05-22 株式会社半導体エネルギー研究所 半導体装置
US9385158B2 (en) * 2013-08-07 2016-07-05 Pixart Imaging Inc. Bipolar junction transistor pixel circuit, driving method thereof, and image sensor
JP6329843B2 (ja) 2013-08-19 2018-05-23 株式会社半導体エネルギー研究所 半導体装置
US9818765B2 (en) 2013-08-26 2017-11-14 Apple Inc. Displays with silicon and semiconducting oxide thin-film transistors
US9564478B2 (en) * 2013-08-26 2017-02-07 Apple Inc. Liquid crystal displays with oxide-based thin-film transistors
KR102294507B1 (ko) * 2013-09-06 2021-08-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
CN103471505B (zh) * 2013-09-16 2016-04-13 京东方科技集团股份有限公司 过孔的检测方法和检测装置
JP6570817B2 (ja) 2013-09-23 2019-09-04 株式会社半導体エネルギー研究所 半導体装置
JP2015084418A (ja) 2013-09-23 2015-04-30 株式会社半導体エネルギー研究所 半導体装置
JP6101357B2 (ja) * 2013-10-09 2017-03-22 シャープ株式会社 半導体装置およびその製造方法
US10163897B2 (en) 2013-11-15 2018-12-25 Taiwan Semiconductor Manufacturing Co., Ltd. Inter-level connection for multi-layer structures
WO2015097596A1 (en) 2013-12-26 2015-07-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR102345617B1 (ko) * 2014-01-13 2022-01-03 삼성디스플레이 주식회사 표시패널
US10985196B2 (en) 2014-02-24 2021-04-20 Lg Display Co., Ltd. Thin film transistor substrate with intermediate insulating layer and display using the same
US10186528B2 (en) 2014-02-24 2019-01-22 Lg Display Co., Ltd. Thin film transistor substrate and display using the same
US10325937B2 (en) 2014-02-24 2019-06-18 Lg Display Co., Ltd. Thin film transistor substrate with intermediate insulating layer and display using the same
EP2911202B1 (en) 2014-02-24 2019-02-20 LG Display Co., Ltd. Thin film transistor substrate and display using the same
US9214508B2 (en) 2014-02-24 2015-12-15 Lg Display Co., Ltd. Thin film transistor substrate with intermediate insulating layer and display using the same
US9881986B2 (en) 2014-02-24 2018-01-30 Lg Display Co., Ltd. Thin film transistor substrate and display using the same
US9721973B2 (en) 2014-02-24 2017-08-01 Lg Display Co., Ltd. Thin film transistor substrate and display using the same
US9691799B2 (en) 2014-02-24 2017-06-27 Lg Display Co., Ltd. Thin film transistor substrate and display using the same
JP6560508B2 (ja) 2014-03-13 2019-08-14 株式会社半導体エネルギー研究所 半導体装置
TWI548067B (zh) * 2014-05-22 2016-09-01 友達光電股份有限公司 畫素結構
TWI539592B (zh) * 2014-05-22 2016-06-21 友達光電股份有限公司 畫素結構
KR20150138026A (ko) 2014-05-29 2015-12-09 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
CN110600486B (zh) * 2014-07-23 2023-04-28 索尼公司 显示装置、制造显示装置的方法以及电子设备
KR101658716B1 (ko) * 2014-12-31 2016-09-30 엘지디스플레이 주식회사 표시 장치
US10522693B2 (en) 2015-01-16 2019-12-31 Semiconductor Energy Laboratory Co., Ltd. Memory device and electronic device
KR102326170B1 (ko) * 2015-04-20 2021-11-17 엘지디스플레이 주식회사 박막 트랜지스터 기판 및 그 제조 방법
JP2017022377A (ja) 2015-07-14 2017-01-26 株式会社半導体エネルギー研究所 半導体装置
US11733807B2 (en) * 2015-09-25 2023-08-22 Apple Inc. Light sensing display
US9773787B2 (en) 2015-11-03 2017-09-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, memory device, electronic device, or method for driving the semiconductor device
KR102768857B1 (ko) * 2015-12-01 2025-02-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 소자, 발광 장치, 전자 기기, 및 조명 장치
US9818344B2 (en) 2015-12-04 2017-11-14 Apple Inc. Display with light-emitting diodes
KR20170073948A (ko) * 2015-12-21 2017-06-29 삼성전자주식회사 플렉서블 필름 구조물 및 그 제조 방법, 및 이를 이용하는 플렉서블 표시 장치
SG10201701689UA (en) 2016-03-18 2017-10-30 Semiconductor Energy Lab Semiconductor device, semiconductor wafer, and electronic device
JP6427712B2 (ja) * 2016-03-25 2018-11-21 日本碍子株式会社 接合方法
US9985082B2 (en) 2016-07-06 2018-05-29 Lg Display Co., Ltd. Organic light emitting display device comprising multi-type thin film transistor and method of manufacturing the same
US10490116B2 (en) 2016-07-06 2019-11-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, memory device, and display system
KR102458660B1 (ko) 2016-08-03 2022-10-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치 및 전자 기기
CN106298645B (zh) * 2016-08-17 2019-04-02 深圳市华星光电技术有限公司 一种tft基板的制备方法
CN106229329A (zh) * 2016-08-22 2016-12-14 华南理工大学 一种金属氧化物薄膜晶体管驱动背板及其制备方法
KR102768407B1 (ko) * 2016-08-29 2025-02-18 삼성디스플레이 주식회사 유기발광 표시장치 및 이의 제조방법
TWI875538B (zh) 2016-08-29 2025-03-01 日商半導體能源研究所股份有限公司 顯示裝置及控制程式
JP2018074076A (ja) * 2016-11-02 2018-05-10 株式会社ジャパンディスプレイ 表示装置
JP7089478B2 (ja) 2016-11-23 2022-06-22 株式会社半導体エネルギー研究所 表示装置、表示モジュール、及び電子機器
JP6706570B2 (ja) 2016-12-05 2020-06-10 株式会社Ｊｏｌｅｄ 半導体装置、半導体装置の製造方法および表示装置
US11107429B2 (en) 2017-03-27 2021-08-31 Sharp Kabushiki Kaisha Active matrix substrate, liquid crystal display device, and organic EL display device
CN106952928B (zh) * 2017-03-30 2018-10-23 深圳市华星光电技术有限公司 一种tft背板的制作方法及tft背板
CN107369651B (zh) * 2017-07-17 2020-03-27 京东方科技集团股份有限公司 互补场效应晶体管及其制备方法和像素电路
CN208722925U (zh) * 2018-08-16 2019-04-09 京东方科技集团股份有限公司 一种显示器件的封装结构、显示装置
JP7193404B2 (ja) * 2019-03-29 2022-12-20 株式会社ジャパンディスプレイ 表示装置
US10944027B2 (en) * 2019-06-14 2021-03-09 X Display Company Technology Limited Pixel modules with controllers and light emitters
CN110690256B (zh) * 2019-08-29 2023-02-03 福建华佳彩有限公司 一种柔性tft基板及其制造方法
US11454053B2 (en) * 2019-09-03 2022-09-27 GM Global Technology Operations LLC Multidirectional opening storage cover with invisible latch
KR20230050317A (ko) 2020-08-12 2023-04-14 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치, 그 동작 방법, 및 전자 기기
DE112021004465T5 (de) 2020-08-27 2023-06-07 Semiconductor Energy Laboratory Co., Ltd. Halbleitervorrichtung, Anzeigevorrichtung und elektronische Vorrichtung
US11891022B2 (en) * 2020-10-12 2024-02-06 Au Optronics Corporation Raindrop sensor device and driving method thereof
US11984508B2 (en) * 2021-02-24 2024-05-14 Taiwan Semiconductor Manufacturing Company Limited Thin film transistor including a compositionally-modulated active region and methods for forming the same
EP4313893A1 (en) * 2021-03-25 2024-02-07 Schott Ag Near infrared transparent, visible light absorptive coating and glass substrate with coating
TWI773298B (zh) * 2021-05-05 2022-08-01 友達光電股份有限公司 顯示裝置的製造方法
CN113889520B (zh) 2021-09-30 2025-05-13 视涯科技股份有限公司 一种显示面板及显示装置
WO2023230922A1 (zh) * 2022-05-31 2023-12-07 京东方科技集团股份有限公司 显示基板及其制备方法、显示装置
TWI819745B (zh) * 2022-08-11 2023-10-21 友達光電股份有限公司 近眼顯示裝置及其製造方法
JP2025059498A (ja) 2023-09-29 2025-04-10 株式会社ジャパンディスプレイ 半導体装置
WO2025142588A1 (ja) * 2023-12-27 2025-07-03 株式会社村田製作所 発振器、およびその製造方法、情報処理装置

Family Cites Families (195)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2776820B2 (ja) * 1988-01-27 1998-07-16 ソニー株式会社 半導体装置の製造方法
JPH0442579A (ja) * 1990-06-08 1992-02-13 Seiko Epson Corp 薄膜トランジスタ及び製造方法
US6067062A (en) * 1990-09-05 2000-05-23 Seiko Instruments Inc. Light valve device
JP3071851B2 (ja) * 1991-03-25 2000-07-31 株式会社半導体エネルギー研究所 電気光学装置
JPH05299653A (ja) * 1991-04-05 1993-11-12 Fuji Xerox Co Ltd 半導体装置及びその製造方法
FR2681472B1 (fr) 1991-09-18 1993-10-29 Commissariat Energie Atomique Procede de fabrication de films minces de materiau semiconducteur.
US5485019A (en) * 1992-02-05 1996-01-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for forming the same
EP0566838A3 (en) * 1992-02-21 1996-07-31 Matsushita Electric Industrial Co Ltd Manufacturing method of thin film transistor
US6964890B1 (en) 1992-03-17 2005-11-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for forming the same
US5899709A (en) * 1992-04-07 1999-05-04 Semiconductor Energy Laboratory Co., Ltd. Method for forming a semiconductor device using anodic oxidation
JP3320845B2 (ja) * 1992-07-06 2002-09-03 株式会社半導体エネルギー研究所 半導体装置の作製方法
JPH06132532A (ja) * 1992-10-16 1994-05-13 Matsushita Electron Corp 半導体装置
US5569936A (en) 1993-03-12 1996-10-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device employing crystallization catalyst
JPH0792500A (ja) * 1993-06-29 1995-04-07 Toshiba Corp 半導体装置
TW299897U (en) 1993-11-05 1997-03-01 Semiconductor Energy Lab A semiconductor integrated circuit
JPH07135324A (ja) * 1993-11-05 1995-05-23 Semiconductor Energy Lab Co Ltd 薄膜状半導体集積回路
JP4801488B2 (ja) * 1993-11-22 2011-10-26 株式会社半導体エネルギー研究所 フリップフロップ回路及びそれを用いたスタティックｒａｍ
JP3067949B2 (ja) 1994-06-15 2000-07-24 シャープ株式会社 電子装置および液晶表示装置
JP3442500B2 (ja) 1994-08-31 2003-09-02 株式会社半導体エネルギー研究所 半導体回路の作製方法
JPH11505377A (ja) 1995-08-03 1999-05-18 フィリップス エレクトロニクス ネムローゼ フェンノートシャップ 半導体装置
JP3228399B2 (ja) * 1995-09-12 2001-11-12 シャープ株式会社 液晶表示装置
JP3625598B2 (ja) 1995-12-30 2005-03-02 三星電子株式会社 液晶表示装置の製造方法
JPH09236818A (ja) * 1996-03-01 1997-09-09 Toshiba Electron Eng Corp 薄膜トランジスタアレイ及びその製造方法
US6288764B1 (en) * 1996-06-25 2001-09-11 Semiconductor Energy Laboratory Co., Ltd. Display device or electronic device having liquid crystal display panel
JP4103968B2 (ja) 1996-09-18 2008-06-18 株式会社半導体エネルギー研究所 絶縁ゲイト型半導体装置
JP3856901B2 (ja) * 1997-04-15 2006-12-13 株式会社半導体エネルギー研究所 表示装置
US6388652B1 (en) 1997-08-20 2002-05-14 Semiconductor Energy Laboratory Co., Ltd. Electrooptical device
US6686623B2 (en) 1997-11-18 2004-02-03 Semiconductor Energy Laboratory Co., Ltd. Nonvolatile memory and electronic apparatus
JP2000012864A (ja) 1998-06-22 2000-01-14 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
JP4170454B2 (ja) 1998-07-24 2008-10-22 Ｈｏｙａ株式会社 透明導電性酸化物薄膜を有する物品及びその製造方法
US6271101B1 (en) 1998-07-29 2001-08-07 Semiconductor Energy Laboratory Co., Ltd. Process for production of SOI substrate and process for production of semiconductor device
JP4476390B2 (ja) 1998-09-04 2010-06-09 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2000150861A (ja) 1998-11-16 2000-05-30 Tdk Corp 酸化物薄膜
JP3276930B2 (ja) 1998-11-17 2002-04-22 科学技術振興事業団 トランジスタ及び半導体装置
US6506635B1 (en) 1999-02-12 2003-01-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, and method of forming the same
US6380559B1 (en) 1999-06-03 2002-04-30 Samsung Electronics Co., Ltd. Thin film transistor array substrate for a liquid crystal display
CN1316636C (zh) * 1999-08-02 2007-05-16 卡西欧计算机株式会社 光传感器和光传感器系统
TW460731B (en) 1999-09-03 2001-10-21 Ind Tech Res Inst Electrode structure and production method of wide viewing angle LCD
JP2001154218A (ja) * 1999-09-08 2001-06-08 Matsushita Electric Ind Co Ltd 表示装置およびその製造方法
US6747638B2 (en) * 2000-01-31 2004-06-08 Semiconductor Energy Laboratory Co., Ltd. Adhesion type area sensor and display device having adhesion type area sensor
US7517551B2 (en) * 2000-05-12 2009-04-14 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a light-emitting device
US6995753B2 (en) * 2000-06-06 2006-02-07 Semiconductor Energy Laboratory Co., Ltd. Display device and method of manufacturing the same
JP4089858B2 (ja) 2000-09-01 2008-05-28 国立大学法人東北大学 半導体デバイス
KR20020038482A (ko) * 2000-11-15 2002-05-23 모리시타 요이찌 박막 트랜지스터 어레이, 그 제조방법 및 그것을 이용한표시패널
JP3997731B2 (ja) 2001-03-19 2007-10-24 富士ゼロックス株式会社 基材上に結晶性半導体薄膜を形成する方法
JP2002289859A (ja) 2001-03-23 2002-10-04 Minolta Co Ltd 薄膜トランジスタ
US7253032B2 (en) * 2001-04-20 2007-08-07 Semiconductor Energy Laboratory Co., Ltd. Method of flattening a crystallized semiconductor film surface by using a plate
CN1170196C (zh) * 2001-06-04 2004-10-06 友达光电股份有限公司 薄膜晶体管液晶显示器的制作方法
TW548860B (en) * 2001-06-20 2003-08-21 Semiconductor Energy Lab Light emitting device and method of manufacturing the same
JP4193206B2 (ja) * 2001-07-25 2008-12-10 セイコーエプソン株式会社 半導体薄膜の製造方法、半導体装置の製造方法、半導体装置、集積回路、電気光学装置及び電子機器
JP2003109773A (ja) * 2001-07-27 2003-04-11 Semiconductor Energy Lab Co Ltd 発光装置、半導体装置およびそれらの作製方法
JP3925839B2 (ja) 2001-09-10 2007-06-06 シャープ株式会社 半導体記憶装置およびその試験方法
JP4090716B2 (ja) 2001-09-10 2008-05-28 雅司 川崎 薄膜トランジスタおよびマトリクス表示装置
JP4634673B2 (ja) * 2001-09-26 2011-02-16 シャープ株式会社 液晶表示装置及びその製造方法
WO2003040441A1 (fr) 2001-11-05 2003-05-15 Japan Science And Technology Agency Film mince monocristallin homologue a super-reseau naturel, procede de preparation et dispositif dans lequel est utilise ledit film mince monocristallin
JP4164562B2 (ja) 2002-09-11 2008-10-15 独立行政法人科学技術振興機構 ホモロガス薄膜を活性層として用いる透明薄膜電界効果型トランジスタ
JP3962800B2 (ja) * 2001-11-29 2007-08-22 Ｎｅｃ液晶テクノロジー株式会社 液晶表示装置の製造方法
JP4245292B2 (ja) * 2001-12-06 2009-03-25 シャープ株式会社 トランジスタアレイ、アクティブマトリクス基板、表示装置、並びにトランジスタアレイおよびアクティブマトリクス基板の製造方法
JP4062254B2 (ja) * 2001-12-10 2008-03-19 三菱電機株式会社 反射型液晶表示装置
US7098069B2 (en) * 2002-01-24 2006-08-29 Semiconductor Energy Laboratory Co., Ltd. Light emitting device, method of preparing the same and device for fabricating the same
JP4083486B2 (ja) 2002-02-21 2008-04-30 独立行政法人科学技術振興機構 ＬｎＣｕＯ（Ｓ，Ｓｅ，Ｔｅ）単結晶薄膜の製造方法
KR100892945B1 (ko) * 2002-02-22 2009-04-09 삼성전자주식회사 액티브 매트릭스형 유기전계발광 표시장치 및 그 제조방법
CN1445821A (zh) 2002-03-15 2003-10-01 三洋电机株式会社 ZnO膜和ZnO半导体层的形成方法、半导体元件及其制造方法
US7119365B2 (en) * 2002-03-26 2006-10-10 Sharp Kabushiki Kaisha Semiconductor device and manufacturing method thereof, SOI substrate and display device using the same, and manufacturing method of the SOI substrate
JP3933591B2 (ja) 2002-03-26 2007-06-20 淳二 城戸 有機エレクトロルミネッセント素子
GB0210065D0 (en) * 2002-05-02 2002-06-12 Koninkl Philips Electronics Nv Electronic devices comprising bottom gate tft's and their manufacture
US7339187B2 (en) 2002-05-21 2008-03-04 State Of Oregon Acting By And Through The Oregon State Board Of Higher Education On Behalf Of Oregon State University Transistor structures
JP3913756B2 (ja) * 2002-05-22 2007-05-09 雅司 川崎 半導体装置およびそれを用いる表示装置
JP2004022625A (ja) 2002-06-13 2004-01-22 Murata Mfg Co Ltd 半導体デバイス及び該半導体デバイスの製造方法
US7105868B2 (en) 2002-06-24 2006-09-12 Cermet, Inc. High-electron mobility transistor with zinc oxide
US6908797B2 (en) 2002-07-09 2005-06-21 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
US7508034B2 (en) 2002-09-25 2009-03-24 Sharp Kabushiki Kaisha Single-crystal silicon substrate, SOI substrate, semiconductor device, display device, and manufacturing method of semiconductor device
US7067843B2 (en) 2002-10-11 2006-06-27 E. I. Du Pont De Nemours And Company Transparent oxide semiconductor thin film transistors
JP4175877B2 (ja) * 2002-11-29 2008-11-05 株式会社半導体エネルギー研究所 半導体装置及びその作製方法
JP4166105B2 (ja) 2003-03-06 2008-10-15 シャープ株式会社 半導体装置およびその製造方法
JP2004273732A (ja) 2003-03-07 2004-09-30 Sharp Corp アクティブマトリクス基板およびその製造方法
JP2004317727A (ja) * 2003-04-15 2004-11-11 Seiko Epson Corp シフトレジスタ、データ線駆動回路および走査線駆動回路、電気光学装置並びに電子機器
JP4108633B2 (ja) 2003-06-20 2008-06-25 シャープ株式会社 薄膜トランジスタおよびその製造方法ならびに電子デバイス
US7262463B2 (en) 2003-07-25 2007-08-28 Hewlett-Packard Development Company, L.P. Transistor including a deposited channel region having a doped portion
JP4483235B2 (ja) * 2003-09-01 2010-06-16 カシオ計算機株式会社 トランジスタアレイ基板の製造方法及びトランジスタアレイ基板
US7760317B2 (en) * 2003-10-14 2010-07-20 Lg Display Co., Ltd. Thin film transistor array substrate and fabricating method thereof, liquid crystal display using the same and fabricating method thereof, and method of inspecting liquid crystal display
KR100992126B1 (ko) * 2003-10-20 2010-11-04 삼성전자주식회사 박막 트랜지스터 표시판 및 그의 제조 방법
JP4574158B2 (ja) * 2003-10-28 2010-11-04 株式会社半導体エネルギー研究所 半導体表示装置及びその作製方法
KR100900404B1 (ko) * 2003-12-22 2009-06-02 엘지디스플레이 주식회사 액정표시소자의 제조 방법
JP4009759B2 (ja) * 2004-02-17 2007-11-21 カシオ計算機株式会社 画像処理装置及びその製造方法
US7915723B2 (en) * 2004-01-29 2011-03-29 Casio Computer Co., Ltd. Transistor array, manufacturing method thereof and image processor
US7145174B2 (en) 2004-03-12 2006-12-05 Hewlett-Packard Development Company, Lp. Semiconductor device
US7242039B2 (en) 2004-03-12 2007-07-10 Hewlett-Packard Development Company, L.P. Semiconductor device
CN1998087B (zh) 2004-03-12 2014-12-31 独立行政法人科学技术振兴机构 非晶形氧化物和薄膜晶体管
US7282782B2 (en) 2004-03-12 2007-10-16 Hewlett-Packard Development Company, L.P. Combined binary oxide semiconductor device
US7297977B2 (en) 2004-03-12 2007-11-20 Hewlett-Packard Development Company, L.P. Semiconductor device
JP5008823B2 (ja) * 2004-03-19 2012-08-22 シャープ株式会社 表示装置
JP4370957B2 (ja) 2004-03-26 2009-11-25 カシオ計算機株式会社 画像読取装置
US20050275018A1 (en) 2004-06-10 2005-12-15 Suresh Venkatesan Semiconductor device with multiple semiconductor layers
US7211825B2 (en) 2004-06-14 2007-05-01 Yi-Chi Shih Indium oxide-based thin film transistors and circuits
FR2873085B1 (fr) * 2004-07-19 2006-10-27 Plastic Omnium Cie Bouclier de pare-chocs de vehicule automobile constitue par une peau et une doublure de peau ajouree et procede de montage d'un tel bouclier sur le chassis d'un vehicule automobile
JP2006039272A (ja) * 2004-07-28 2006-02-09 Sony Corp 表示装置およびその製造方法
JP2006079589A (ja) * 2004-08-05 2006-03-23 Sanyo Electric Co Ltd タッチパネル
JP4872197B2 (ja) * 2004-08-25 2012-02-08 カシオ計算機株式会社 薄膜トランジスタパネル及びその製造方法
JP4997691B2 (ja) * 2004-08-25 2012-08-08 カシオ計算機株式会社 薄膜トランジスタパネル及びその製造方法
JP4872196B2 (ja) * 2004-08-25 2012-02-08 カシオ計算機株式会社 薄膜トランジスタパネル及びその製造方法
JP2006100760A (ja) 2004-09-02 2006-04-13 Casio Comput Co Ltd 薄膜トランジスタおよびその製造方法
JP4286754B2 (ja) 2004-09-16 2009-07-01 株式会社半導体エネルギー研究所 表示装置の作製方法
US7285501B2 (en) 2004-09-17 2007-10-23 Hewlett-Packard Development Company, L.P. Method of forming a solution processed device
US7298084B2 (en) 2004-11-02 2007-11-20 3M Innovative Properties Company Methods and displays utilizing integrated zinc oxide row and column drivers in conjunction with organic light emitting diodes
KR100998527B1 (ko) 2004-11-10 2010-12-07 고쿠리츠다이가쿠호진 토쿄고교 다이가꾸 비정질 산화물 및 전계 효과 트랜지스터
WO2006051995A1 (en) 2004-11-10 2006-05-18 Canon Kabushiki Kaisha Field effect transistor employing an amorphous oxide
JP5053537B2 (ja) * 2004-11-10 2012-10-17 キヤノン株式会社 非晶質酸化物を利用した半導体デバイス
US7791072B2 (en) 2004-11-10 2010-09-07 Canon Kabushiki Kaisha Display
US7829444B2 (en) 2004-11-10 2010-11-09 Canon Kabushiki Kaisha Field effect transistor manufacturing method
US7863611B2 (en) * 2004-11-10 2011-01-04 Canon Kabushiki Kaisha Integrated circuits utilizing amorphous oxides
US7453065B2 (en) 2004-11-10 2008-11-18 Canon Kabushiki Kaisha Sensor and image pickup device
EP1810335B1 (en) 2004-11-10 2020-05-27 Canon Kabushiki Kaisha Light-emitting device
US7579224B2 (en) 2005-01-21 2009-08-25 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a thin film semiconductor device
TWI562380B (en) 2005-01-28 2016-12-11 Semiconductor Energy Lab Co Ltd Semiconductor device, electronic device, and method of manufacturing semiconductor device
TWI481024B (zh) 2005-01-28 2015-04-11 半導體能源研究所股份有限公司 半導體裝置，電子裝置，和半導體裝置的製造方法
US7858451B2 (en) 2005-02-03 2010-12-28 Semiconductor Energy Laboratory Co., Ltd. Electronic device, semiconductor device and manufacturing method thereof
US7948171B2 (en) 2005-02-18 2011-05-24 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
US20060197092A1 (en) 2005-03-03 2006-09-07 Randy Hoffman System and method for forming conductive material on a substrate
US8681077B2 (en) 2005-03-18 2014-03-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, and display device, driving method and electronic apparatus thereof
US7544967B2 (en) 2005-03-28 2009-06-09 Massachusetts Institute Of Technology Low voltage flexible organic/transparent transistor for selective gas sensing, photodetecting and CMOS device applications
JP2006278621A (ja) * 2005-03-29 2006-10-12 Toppan Printing Co Ltd トランジスタ論理回路の製造方法
US7645478B2 (en) 2005-03-31 2010-01-12 3M Innovative Properties Company Methods of making displays
US7928938B2 (en) * 2005-04-19 2011-04-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including memory circuit, display device and electronic apparatus
JP5089072B2 (ja) * 2005-04-19 2012-12-05 株式会社半導体エネルギー研究所 半導体装置
US8300031B2 (en) 2005-04-20 2012-10-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising transistor having gate and drain connected through a current-voltage conversion element
JPWO2006117900A1 (ja) * 2005-04-26 2008-12-18 シャープ株式会社 半導体装置の製造方法及び半導体装置
JP2006344849A (ja) 2005-06-10 2006-12-21 Casio Comput Co Ltd 薄膜トランジスタ
US7691666B2 (en) 2005-06-16 2010-04-06 Eastman Kodak Company Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby
US7402506B2 (en) 2005-06-16 2008-07-22 Eastman Kodak Company Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby
JP2007005462A (ja) 2005-06-22 2007-01-11 Wakayama Univ 薄膜トランジスタ及びその製造方法
US7507618B2 (en) 2005-06-27 2009-03-24 3M Innovative Properties Company Method for making electronic devices using metal oxide nanoparticles
KR100711890B1 (ko) 2005-07-28 2007-04-25 삼성에스디아이 주식회사 유기 발광표시장치 및 그의 제조방법
JP2007059128A (ja) 2005-08-23 2007-03-08 Canon Inc 有機ｅｌ表示装置およびその製造方法
FR2890236B1 (fr) * 2005-08-30 2007-11-30 Commissariat Energie Atomique Procede de fabrication de circuits en couches minces en silicium amorphe et polycristallin
JP2007073705A (ja) 2005-09-06 2007-03-22 Canon Inc 酸化物半導体チャネル薄膜トランジスタおよびその製造方法
JP5116225B2 (ja) 2005-09-06 2013-01-09 キヤノン株式会社 酸化物半導体デバイスの製造方法
JP4732080B2 (ja) 2005-09-06 2011-07-27 キヤノン株式会社 発光素子
JP4280736B2 (ja) 2005-09-06 2009-06-17 キヤノン株式会社 半導体素子
JP4850457B2 (ja) 2005-09-06 2012-01-11 キヤノン株式会社 薄膜トランジスタ及び薄膜ダイオード
JP4981283B2 (ja) * 2005-09-06 2012-07-18 キヤノン株式会社 アモルファス酸化物層を用いた薄膜トランジスタ
JP2007110064A (ja) * 2005-09-14 2007-04-26 Ishikawajima Harima Heavy Ind Co Ltd レーザアニール方法及び装置
JP2007079431A (ja) * 2005-09-16 2007-03-29 Toshiba Matsushita Display Technology Co Ltd 表示素子用アレイ基板及びその作製方法、これを用いた表示素子
JP5057731B2 (ja) * 2005-09-16 2012-10-24 株式会社半導体エネルギー研究所 表示装置、モジュール、及び電子機器
JP5078246B2 (ja) * 2005-09-29 2012-11-21 株式会社半導体エネルギー研究所 半導体装置、及び半導体装置の作製方法
JP5064747B2 (ja) * 2005-09-29 2012-10-31 株式会社半導体エネルギー研究所 半導体装置、電気泳動表示装置、表示モジュール、電子機器、及び半導体装置の作製方法
EP1998373A3 (en) * 2005-09-29 2012-10-31 Semiconductor Energy Laboratory Co, Ltd. Semiconductor device having oxide semiconductor layer and manufacturing method thereof
KR101299604B1 (ko) 2005-10-18 2013-08-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제조 방법
JP2007115807A (ja) * 2005-10-19 2007-05-10 Toppan Printing Co Ltd トランジスタ
JP5037808B2 (ja) 2005-10-20 2012-10-03 キヤノン株式会社 アモルファス酸化物を用いた電界効果型トランジスタ、及び該トランジスタを用いた表示装置
JP2007123702A (ja) 2005-10-31 2007-05-17 Toppan Printing Co Ltd 薄膜トランジスタとその製造方法
KR101103374B1 (ko) 2005-11-15 2012-01-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치
JP5395994B2 (ja) * 2005-11-18 2014-01-22 出光興産株式会社 半導体薄膜、及びその製造方法、並びに薄膜トランジスタ
JP2007157916A (ja) 2005-12-02 2007-06-21 Idemitsu Kosan Co Ltd Ｔｆｔ基板及びｔｆｔ基板の製造方法
TWI292281B (en) 2005-12-29 2008-01-01 Ind Tech Res Inst Pixel structure of active organic light emitting diode and method of fabricating the same
US7867636B2 (en) 2006-01-11 2011-01-11 Murata Manufacturing Co., Ltd. Transparent conductive film and method for manufacturing the same
JP4977478B2 (ja) 2006-01-21 2012-07-18 三星電子株式会社 ＺｎＯフィルム及びこれを用いたＴＦＴの製造方法
US7576394B2 (en) 2006-02-02 2009-08-18 Kochi Industrial Promotion Center Thin film transistor including low resistance conductive thin films and manufacturing method thereof
US7977169B2 (en) 2006-02-15 2011-07-12 Kochi Industrial Promotion Center Semiconductor device including active layer made of zinc oxide with controlled orientations and manufacturing method thereof
KR20070101595A (ko) 2006-04-11 2007-10-17 삼성전자주식회사 ＺｎＯ ＴＦＴ
US20070252928A1 (en) 2006-04-28 2007-11-01 Toppan Printing Co., Ltd. Structure, transmission type liquid crystal display, reflection type display and manufacturing method thereof
JP5028033B2 (ja) 2006-06-13 2012-09-19 キヤノン株式会社 酸化物半導体膜のドライエッチング方法
KR100878379B1 (ko) * 2006-07-12 2009-01-13 엡슨 이미징 디바이스 가부시키가이샤 액정 표시 장치
JP4609797B2 (ja) 2006-08-09 2011-01-12 Ｎｅｃ液晶テクノロジー株式会社 薄膜デバイス及びその製造方法
JP4999400B2 (ja) 2006-08-09 2012-08-15 キヤノン株式会社 酸化物半導体膜のドライエッチング方法
US7663165B2 (en) * 2006-08-31 2010-02-16 Aptina Imaging Corporation Transparent-channel thin-film transistor-based pixels for high-performance image sensors
JP4332545B2 (ja) 2006-09-15 2009-09-16 キヤノン株式会社 電界効果型トランジスタ及びその製造方法
JP4274219B2 (ja) 2006-09-27 2009-06-03 セイコーエプソン株式会社 電子デバイス、有機エレクトロルミネッセンス装置、有機薄膜半導体装置
JP5164357B2 (ja) 2006-09-27 2013-03-21 キヤノン株式会社 半導体装置及び半導体装置の製造方法
US7622371B2 (en) 2006-10-10 2009-11-24 Hewlett-Packard Development Company, L.P. Fused nanocrystal thin film semiconductor and method
US7772021B2 (en) 2006-11-29 2010-08-10 Samsung Electronics Co., Ltd. Flat panel displays comprising a thin-film transistor having a semiconductive oxide in its channel and methods of fabricating the same for use in flat panel displays
JP2008140684A (ja) 2006-12-04 2008-06-19 Toppan Printing Co Ltd カラーｅｌディスプレイおよびその製造方法
DE102007057089B4 (de) * 2006-12-22 2010-04-29 Lg Display Co., Ltd. Flüssigkristallanzeige mit Photosensor und Herstellungsverfahren derselben
KR101303578B1 (ko) 2007-01-05 2013-09-09 삼성전자주식회사 박막 식각 방법
US8207063B2 (en) 2007-01-26 2012-06-26 Eastman Kodak Company Process for atomic layer deposition
JP4305533B2 (ja) * 2007-03-12 2009-07-29 エプソンイメージングデバイス株式会社 表示装置
KR100851215B1 (ko) 2007-03-14 2008-08-07 삼성에스디아이 주식회사 박막 트랜지스터 및 이를 이용한 유기 전계 발광표시장치
US7795613B2 (en) 2007-04-17 2010-09-14 Toppan Printing Co., Ltd. Structure with transistor
KR101325053B1 (ko) 2007-04-18 2013-11-05 삼성디스플레이 주식회사 박막 트랜지스터 기판 및 이의 제조 방법
KR20080094300A (ko) 2007-04-19 2008-10-23 삼성전자주식회사 박막 트랜지스터 및 그 제조 방법과 박막 트랜지스터를포함하는 평판 디스플레이
KR101334181B1 (ko) 2007-04-20 2013-11-28 삼성전자주식회사 선택적으로 결정화된 채널층을 갖는 박막 트랜지스터 및 그제조 방법
CN101663762B (zh) 2007-04-25 2011-09-21 佳能株式会社 氧氮化物半导体
KR101345376B1 (ko) 2007-05-29 2013-12-24 삼성전자주식회사 ＺｎＯ 계 박막 트랜지스터 및 그 제조방법
US8354674B2 (en) 2007-06-29 2013-01-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device wherein a property of a first semiconductor layer is different from a property of a second semiconductor layer
TWI412125B (zh) * 2007-07-17 2013-10-11 Creator Technology Bv 電子元件及電子元件之製法
US8202365B2 (en) 2007-12-17 2012-06-19 Fujifilm Corporation Process for producing oriented inorganic crystalline film, and semiconductor device using the oriented inorganic crystalline film
KR101048965B1 (ko) * 2009-01-22 2011-07-12 삼성모바일디스플레이주식회사 유기 전계발광 표시장치
JP5275515B2 (ja) * 2010-04-30 2013-08-28 シャープ株式会社 回路基板および表示装置
SG2014013833A (en) * 2011-06-24 2014-10-30 Sharp Kk Display device and method for manufacturing same
JP6101357B2 (ja) * 2013-10-09 2017-03-22 シャープ株式会社 半導体装置およびその製造方法
KR102235597B1 (ko) * 2014-02-19 2021-04-05 삼성디스플레이 주식회사 유기 발광 디스플레이 장치 및 이의 제조 방법
US9881986B2 (en) * 2014-02-24 2018-01-30 Lg Display Co., Ltd. Thin film transistor substrate and display using the same
KR102326170B1 (ko) * 2015-04-20 2021-11-17 엘지디스플레이 주식회사 박막 트랜지스터 기판 및 그 제조 방법
JP2018170326A (ja) * 2017-03-29 2018-11-01 株式会社ジャパンディスプレイ 表示装置
JP2018195632A (ja) * 2017-05-15 2018-12-06 株式会社ジャパンディスプレイ 半導体装置および表示装置

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20130038936A (ko) * 2010-07-27 2013-04-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
KR101885691B1 (ko) 2010-07-27 2018-08-06 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
US10522689B2 (en) 2010-07-27 2019-12-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same

Also Published As

Publication number Publication date
TW200917419A (en) 2009-04-16
JP7129539B2 (ja) 2022-09-01
US20220102391A1 (en) 2022-03-31
JP7293473B2 (ja) 2023-06-19
JP2009033145A (ja) 2009-02-12
CN101335273A (zh) 2008-12-31
JP6756012B2 (ja) 2020-09-16
US20220102393A1 (en) 2022-03-31
JP2021002046A (ja) 2021-01-07
US20100193785A1 (en) 2010-08-05
JP2010161382A (ja) 2010-07-22
CN102543865B (zh) 2015-11-25
JP5292330B2 (ja) 2013-09-18
JP2022171680A (ja) 2022-11-11
JP2017034275A (ja) 2017-02-09
JP7739574B2 (ja) 2025-09-16
CN101335273B (zh) 2013-03-27
JP6756060B2 (ja) 2020-09-16
JP6838191B2 (ja) 2021-03-03
JP6978625B2 (ja) 2021-12-08
JP2021005091A (ja) 2021-01-14
JP2015111706A (ja) 2015-06-18
JP7584571B2 (ja) 2024-11-15
US20240213276A1 (en) 2024-06-27
JP2018128693A (ja) 2018-08-16
JP6642950B2 (ja) 2020-02-12
US8354674B2 (en) 2013-01-15
CN102543865A (zh) 2012-07-04
TWI466235B (zh) 2014-12-21
JP2023123532A (ja) 2023-09-05
JP2025019073A (ja) 2025-02-06
JP5684308B2 (ja) 2015-03-11
US20190157314A1 (en) 2019-05-23
JP2020074011A (ja) 2020-05-14
US20220102392A1 (en) 2022-03-31
TW201234523A (en) 2012-08-16
TWI450364B (zh) 2014-08-21
JP2019191595A (ja) 2019-10-31
JP2013165274A (ja) 2013-08-22
US20090002590A1 (en) 2009-01-01
JP2021165839A (ja) 2021-10-14
JP2022046590A (ja) 2022-03-23

Similar Documents

Publication Publication Date Title
JP7293473B2 (ja) 表示装置
JP6522189B2 (ja) 半導体装置
JP2023065347A (ja) 表示装置
JP5520437B2 (ja) 表示装置
JP5500793B2 (ja) 半導体装置の製造方法
JP2009031784A (ja) 表示装置およびその作製方法
JP2009008890A (ja) 表示装置及び電子機器

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20110414

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20110414

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20120920

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20120925

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20121015

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20130305

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20130311

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20160315

Year of fee payment: 3

R150 Certificate of patent or registration of utility model

Ref document number: 5222636

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20160315

Year of fee payment: 3

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250