DE69636872D1 - Vakuumbehandlungsanlage und Halbleiterfertigungsstrasse die diese verwendet - Google Patents

Vakuumbehandlungsanlage und Halbleiterfertigungsstrasse die diese verwendet

Info

Publication number
DE69636872D1
DE69636872D1 DE69636872T DE69636872T DE69636872D1 DE 69636872 D1 DE69636872 D1 DE 69636872D1 DE 69636872 T DE69636872 T DE 69636872T DE 69636872 T DE69636872 T DE 69636872T DE 69636872 D1 DE69636872 D1 DE 69636872D1
Authority
DE
Germany
Prior art keywords
semiconductor manufacturing
treatment plant
manufacturing line
vacuum treatment
vacuum
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69636872T
Other languages
English (en)
Other versions
DE69636872T2 (de
Inventor
Minoru Soraoka
Ken Yoshioka
Yoshinao Kawasaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Application granted granted Critical
Publication of DE69636872D1 publication Critical patent/DE69636872D1/de
Publication of DE69636872T2 publication Critical patent/DE69636872T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
    • H01L21/67167—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers surrounding a central transfer chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
    • H01L21/67173—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers in-line arrangement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67196—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the transfer chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
    • H01L21/67727—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations using a general scheme of a conveying path within a factory
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67763—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
    • H01L21/67778—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading involving loading and unloading of wafers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S134/00—Cleaning and liquid contact with solids
    • Y10S134/902—Semiconductor wafer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S414/00—Material or article handling
    • Y10S414/135—Associated with semiconductor wafer handling
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S414/00—Material or article handling
    • Y10S414/135—Associated with semiconductor wafer handling
    • Y10S414/137—Associated with semiconductor wafer handling including means for charging or discharging wafer cassette
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S414/00—Material or article handling
    • Y10S414/135—Associated with semiconductor wafer handling
    • Y10S414/139—Associated with semiconductor wafer handling including wafer charging or discharging means for vacuum chamber
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S414/00—Material or article handling
    • Y10S414/135—Associated with semiconductor wafer handling
    • Y10S414/14—Wafer cassette transporting
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T70/00—Locks
    • Y10T70/50—Special application
    • Y10T70/5611—For control and machine elements
    • Y10T70/5757—Handle, handwheel or knob
    • Y10T70/5765—Rotary or swinging
    • Y10T70/577—Locked stationary
    • Y10T70/5792—Handle-carried key lock
    • Y10T70/5796—Coaxially mounted
    • Y10T70/5801—Axially movable bolt
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T70/00—Locks
    • Y10T70/50—Special application
    • Y10T70/5611—For control and machine elements
    • Y10T70/5757—Handle, handwheel or knob
    • Y10T70/5765—Rotary or swinging
    • Y10T70/5805—Freely movable when locked

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Drying Of Semiconductors (AREA)
DE69636872T 1995-07-19 1996-07-12 Vakuumbehandlungsanlage und Halbleiterfertigungsstrasse die diese verwendet Expired - Lifetime DE69636872T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP18292195 1995-07-19
JP7182921A JPH0936198A (ja) 1995-07-19 1995-07-19 真空処理装置およびそれを用いた半導体製造ライン

Publications (2)

Publication Number Publication Date
DE69636872D1 true DE69636872D1 (de) 2007-03-15
DE69636872T2 DE69636872T2 (de) 2007-09-20

Family

ID=16126714

Family Applications (3)

Application Number Title Priority Date Filing Date
DE69633487T Expired - Fee Related DE69633487T2 (de) 1995-07-19 1996-07-12 Vakuumbehandlungsvorrichtung und Halbleiter-Fertigungslinie die diese verwendet
DE69637878T Expired - Fee Related DE69637878D1 (de) 1995-07-19 1996-07-12 Vakuumbehandlungsanlage und Halbleiterfertigungsstrasse die diese verwendet
DE69636872T Expired - Lifetime DE69636872T2 (de) 1995-07-19 1996-07-12 Vakuumbehandlungsanlage und Halbleiterfertigungsstrasse die diese verwendet

Family Applications Before (2)

Application Number Title Priority Date Filing Date
DE69633487T Expired - Fee Related DE69633487T2 (de) 1995-07-19 1996-07-12 Vakuumbehandlungsvorrichtung und Halbleiter-Fertigungslinie die diese verwendet
DE69637878T Expired - Fee Related DE69637878D1 (de) 1995-07-19 1996-07-12 Vakuumbehandlungsanlage und Halbleiterfertigungsstrasse die diese verwendet

Country Status (7)

Country Link
US (18) US5855726A (de)
EP (3) EP1143488B1 (de)
JP (1) JPH0936198A (de)
KR (2) KR100440683B1 (de)
DE (3) DE69633487T2 (de)
SG (1) SG52824A1 (de)
TW (1) TW391987B (de)

Families Citing this family (335)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0936198A (ja) * 1995-07-19 1997-02-07 Hitachi Ltd 真空処理装置およびそれを用いた半導体製造ライン
US5944940A (en) * 1996-07-09 1999-08-31 Gamma Precision Technology, Inc. Wafer transfer system and method of using the same
US5980183A (en) * 1997-04-14 1999-11-09 Asyst Technologies, Inc. Integrated intrabay buffer, delivery, and stocker system
US5944857A (en) * 1997-05-08 1999-08-31 Tokyo Electron Limited Multiple single-wafer loadlock wafer processing apparatus and loading and unloading method therefor
JPH1126541A (ja) * 1997-07-02 1999-01-29 Tokyo Electron Ltd 処理装置
US6312525B1 (en) * 1997-07-11 2001-11-06 Applied Materials, Inc. Modular architecture for semiconductor wafer fabrication equipment
US6034000A (en) * 1997-07-28 2000-03-07 Applied Materials, Inc. Multiple loadlock system
KR100238251B1 (ko) * 1997-08-20 2000-01-15 윤종용 하나의 도포 및 현상을 수행하는 장치에 복수의 정렬 및 노광장치를 병렬적으로 인-라인시킨 포토리쏘그래피장치
JPH11129184A (ja) * 1997-09-01 1999-05-18 Dainippon Screen Mfg Co Ltd 基板処理装置および基板搬入搬出装置
JP2974069B2 (ja) * 1997-09-25 1999-11-08 イノテック株式会社 半導体デバイスの製造装置
US6235634B1 (en) * 1997-10-08 2001-05-22 Applied Komatsu Technology, Inc. Modular substrate processing system
EP2099061A3 (de) * 1997-11-28 2013-06-12 Mattson Technology, Inc. Verfahren und Anlage zur Handhabung von Werkstücken unter Vakuum mit niedriger Kontamination und hohem Durchsatz
US6042623A (en) * 1998-01-12 2000-03-28 Tokyo Electron Limited Two-wafer loadlock wafer processing apparatus and loading and unloading method therefor
JP3966594B2 (ja) * 1998-01-26 2007-08-29 東京エレクトロン株式会社 予備真空室およびそれを用いた真空処理装置
JP3363375B2 (ja) * 1998-03-18 2003-01-08 東京エレクトロン株式会社 基板搬送装置および基板処理装置
US6208751B1 (en) * 1998-03-24 2001-03-27 Applied Materials, Inc. Cluster tool
KR100265287B1 (ko) * 1998-04-21 2000-10-02 윤종용 반도체소자 제조용 식각설비의 멀티챔버 시스템
US6079927A (en) * 1998-04-22 2000-06-27 Varian Semiconductor Equipment Associates, Inc. Automated wafer buffer for use with wafer processing equipment
US6206176B1 (en) 1998-05-20 2001-03-27 Applied Komatsu Technology, Inc. Substrate transfer shuttle having a magnetic drive
US6176668B1 (en) 1998-05-20 2001-01-23 Applied Komatsu Technology, Inc. In-situ substrate transfer shuttle
US6213704B1 (en) 1998-05-20 2001-04-10 Applied Komatsu Technology, Inc. Method and apparatus for substrate transfer and processing
US6086362A (en) 1998-05-20 2000-07-11 Applied Komatsu Technology, Inc. Multi-function chamber for a substrate processing system
US6517303B1 (en) 1998-05-20 2003-02-11 Applied Komatsu Technology, Inc. Substrate transfer shuttle
JP3665716B2 (ja) * 1998-09-28 2005-06-29 東京エレクトロン株式会社 処理システム
KR100586773B1 (ko) * 1998-09-28 2006-06-08 동경 엘렉트론 주식회사 처리시스템
TW442891B (en) * 1998-11-17 2001-06-23 Tokyo Electron Ltd Vacuum processing system
JP2000150618A (ja) * 1998-11-17 2000-05-30 Tokyo Electron Ltd 真空処理システム
DE19900804C2 (de) * 1999-01-12 2000-10-19 Siemens Ag Fördersystem
JP4302817B2 (ja) * 1999-05-13 2009-07-29 東京エレクトロン株式会社 真空処理システム
US6440261B1 (en) 1999-05-25 2002-08-27 Applied Materials, Inc. Dual buffer chamber cluster tool for semiconductor wafer processing
DE19952195A1 (de) * 1999-10-29 2001-05-17 Infineon Technologies Ag Anlage zur Bearbeitung von Wafern
US6298685B1 (en) 1999-11-03 2001-10-09 Applied Materials, Inc. Consecutive deposition system
US6558509B2 (en) 1999-11-30 2003-05-06 Applied Materials, Inc. Dual wafer load lock
US6949143B1 (en) * 1999-12-15 2005-09-27 Applied Materials, Inc. Dual substrate loadlock process equipment
US6698991B1 (en) * 2000-03-02 2004-03-02 Applied Materials, Inc. Fabrication system with extensible equipment sets
WO2001082055A1 (en) * 2000-04-25 2001-11-01 Pri Automation, Inc. Reticle management system
US20010043989A1 (en) * 2000-05-18 2001-11-22 Masami Akimoto Film forming apparatus and film forming method
US6732003B1 (en) * 2000-08-07 2004-05-04 Data I/O Corporation Feeder/programming/loader system
US6906109B2 (en) 2000-09-01 2005-06-14 Chemical Products Corp. Method for controling uniformity of colloidal silica particle size
TW512421B (en) * 2000-09-15 2002-12-01 Applied Materials Inc Double dual slot load lock for process equipment
AU2002227418A1 (en) * 2001-01-22 2002-08-06 Tokyo Electron Limited Vertically translatable chuck assembly and method for a plasma reactor system
US20040111339A1 (en) * 2001-04-03 2004-06-10 Asyst Technologies, Inc. Distributed control system architecture and method for a material transport system
JP4937459B2 (ja) * 2001-04-06 2012-05-23 東京エレクトロン株式会社 クラスタツールおよび搬送制御方法
JP2002319609A (ja) * 2001-04-19 2002-10-31 Hitachi Ltd 半導体集積回路装置の製造方法
KR100407568B1 (ko) * 2001-06-01 2003-12-01 삼성전자주식회사 장치설치영역 내에 지지대를 갖는 반도체 제조 장치
JP4009087B2 (ja) * 2001-07-06 2007-11-14 アプライド マテリアルズ インコーポレイテッド 半導体製造装置における磁気発生装置、半導体製造装置および磁場強度制御方法
CN1996553A (zh) * 2001-08-31 2007-07-11 阿赛斯特技术公司 用于半导体材料处理系统的一体化机架
US7316966B2 (en) * 2001-09-21 2008-01-08 Applied Materials, Inc. Method for transferring substrates in a load lock chamber
WO2003046958A2 (en) * 2001-11-29 2003-06-05 Diamond Semiconductor Group, Llc. Wafer handling apparatus and method
JP2003188229A (ja) * 2001-12-18 2003-07-04 Hitachi Kasado Eng Co Ltd ウエハ製造システムおよびウエハ製造方法
US6910847B1 (en) * 2002-07-19 2005-06-28 Nanometrics Incorporated Precision polar coordinate stage
US8960099B2 (en) * 2002-07-22 2015-02-24 Brooks Automation, Inc Substrate processing apparatus
US7988398B2 (en) 2002-07-22 2011-08-02 Brooks Automation, Inc. Linear substrate transport apparatus
US7959395B2 (en) 2002-07-22 2011-06-14 Brooks Automation, Inc. Substrate processing apparatus
US20070183871A1 (en) * 2002-07-22 2007-08-09 Christopher Hofmeister Substrate processing apparatus
RU2005123989A (ru) * 2003-01-02 2006-03-20 Лома Линда Юниверсити Медикал Сентер (Us) Управление конфигурацией и система поиска данных для системы протонной дистанционной протонно-лучевой терапии
US7472737B1 (en) * 2003-01-15 2009-01-06 Leannoux Properties Ag L.L.C. Adjustable micro device feeder
US7010388B2 (en) * 2003-05-22 2006-03-07 Axcelis Technologies, Inc. Work-piece treatment system having load lock and buffer
US7207766B2 (en) * 2003-10-20 2007-04-24 Applied Materials, Inc. Load lock chamber for large area substrate processing system
US10086511B2 (en) 2003-11-10 2018-10-02 Brooks Automation, Inc. Semiconductor manufacturing systems
US8313277B2 (en) 2003-11-10 2012-11-20 Brooks Automation, Inc. Semiconductor manufacturing process modules
US20070269297A1 (en) * 2003-11-10 2007-11-22 Meulen Peter V D Semiconductor wafer handling and transport
US8696298B2 (en) * 2003-11-10 2014-04-15 Brooks Automation, Inc. Semiconductor manufacturing process modules
US7163586B2 (en) * 2003-11-12 2007-01-16 Specialty Coating Systems, Inc. Vapor deposition apparatus
US7497414B2 (en) * 2004-06-14 2009-03-03 Applied Materials, Inc. Curved slit valve door with flexible coupling
DE102004035335A1 (de) * 2004-07-21 2006-02-16 Schott Ag Reinraumfähige Beschichtungsanlage
DE102004035336A1 (de) * 2004-07-21 2006-02-16 Schott Ag Reinraumfähige Beschichtungsanlage
US7428958B2 (en) * 2004-11-15 2008-09-30 Nikon Corporation Substrate conveyor apparatus, substrate conveyance method and exposure apparatus
TWI447840B (zh) * 2004-11-15 2014-08-01 尼康股份有限公司 基板搬運裝置、基板搬運方法以及曝光裝置
TWI278416B (en) * 2004-12-09 2007-04-11 Au Optronics Corp Cassette stocker
JP4688533B2 (ja) * 2005-03-18 2011-05-25 大日本スクリーン製造株式会社 基板処理装置
TWI277461B (en) * 2004-12-24 2007-04-01 Dainippon Screen Mfg Substrate treating apparatus
US20060273815A1 (en) * 2005-06-06 2006-12-07 Applied Materials, Inc. Substrate support with integrated prober drive
US20070006936A1 (en) * 2005-07-07 2007-01-11 Applied Materials, Inc. Load lock chamber with substrate temperature regulation
US20080257260A9 (en) * 2005-09-30 2008-10-23 Applied Materials, Inc. Batch wafer handling system
US7845891B2 (en) * 2006-01-13 2010-12-07 Applied Materials, Inc. Decoupled chamber body
US8398355B2 (en) * 2006-05-26 2013-03-19 Brooks Automation, Inc. Linearly distributed semiconductor workpiece processing tool
US7665951B2 (en) * 2006-06-02 2010-02-23 Applied Materials, Inc. Multiple slot load lock chamber and method of operation
US7951412B2 (en) * 2006-06-07 2011-05-31 Medicinelodge Inc. Laser based metal deposition (LBMD) of antimicrobials to implant surfaces
US7833351B2 (en) * 2006-06-26 2010-11-16 Applied Materials, Inc. Batch processing platform for ALD and CVD
US7845618B2 (en) 2006-06-28 2010-12-07 Applied Materials, Inc. Valve door with ball coupling
US8124907B2 (en) * 2006-08-04 2012-02-28 Applied Materials, Inc. Load lock chamber with decoupled slit valve door seal compartment
US20080219807A1 (en) * 2007-03-05 2008-09-11 Van Der Meulen Peter Semiconductor manufacturing process modules
US20080251019A1 (en) * 2007-04-12 2008-10-16 Sriram Krishnaswami System and method for transferring a substrate into and out of a reduced volume chamber accommodating multiple substrates
JP4989398B2 (ja) * 2007-09-27 2012-08-01 大日本スクリーン製造株式会社 基板処理装置
US20090162170A1 (en) * 2007-12-19 2009-06-25 Asm Japan K.K. Tandem type semiconductor-processing apparatus
JP4406666B2 (ja) * 2008-02-20 2010-02-03 シャープ株式会社 真空処理装置および真空処理工場
JP5341492B2 (ja) * 2008-12-17 2013-11-13 シスメックス株式会社 検体処理システム、検体処理方法およびコンピュータプログラム
JP5539406B2 (ja) * 2009-02-22 2014-07-02 マッパー・リソグラフィー・アイピー・ビー．ブイ． リソグラフィマシン及び基板処理構成体
WO2010094719A1 (en) 2009-02-22 2010-08-26 Mapper Lithography Ip B.V. Charged particle lithography apparatus and method of generating vacuum in a vacuum chamber
US8602706B2 (en) 2009-08-17 2013-12-10 Brooks Automation, Inc. Substrate processing apparatus
JP4766500B2 (ja) * 2009-08-26 2011-09-07 シャープ株式会社 真空処理装置、および真空処理工場
US20130023129A1 (en) 2011-07-20 2013-01-24 Asm America, Inc. Pressure transmitter for a semiconductor processing environment
US9412633B2 (en) * 2011-11-23 2016-08-09 Nidec Sankyo Corporation Workpiece transfer system
JP5314789B2 (ja) * 2012-06-13 2013-10-16 株式会社日立製作所 真空処理装置及び真空処理方法
US10714315B2 (en) 2012-10-12 2020-07-14 Asm Ip Holdings B.V. Semiconductor reaction chamber showerhead
US20160376700A1 (en) 2013-02-01 2016-12-29 Asm Ip Holding B.V. System for treatment of deposition reactor
US11015245B2 (en) 2014-03-19 2021-05-25 Asm Ip Holding B.V. Gas-phase reactor and system having exhaust plenum and components thereof
US10941490B2 (en) 2014-10-07 2021-03-09 Asm Ip Holding B.V. Multiple temperature range susceptor, assembly, reactor and system including the susceptor, and methods of using the same
US10276355B2 (en) 2015-03-12 2019-04-30 Asm Ip Holding B.V. Multi-zone reactor, system including the reactor, and method of using the same
US10458018B2 (en) 2015-06-26 2019-10-29 Asm Ip Holding B.V. Structures including metal carbide material, devices including the structures, and methods of forming same
US10211308B2 (en) 2015-10-21 2019-02-19 Asm Ip Holding B.V. NbMC layers
US11139308B2 (en) 2015-12-29 2021-10-05 Asm Ip Holding B.V. Atomic layer deposition of III-V compounds to form V-NAND devices
US10529554B2 (en) 2016-02-19 2020-01-07 Asm Ip Holding B.V. Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches
US10367080B2 (en) 2016-05-02 2019-07-30 Asm Ip Holding B.V. Method of forming a germanium oxynitride film
US11453943B2 (en) 2016-05-25 2022-09-27 Asm Ip Holding B.V. Method for forming carbon-containing silicon/metal oxide or nitride film by ALD using silicon precursor and hydrocarbon precursor
US10612137B2 (en) 2016-07-08 2020-04-07 Asm Ip Holdings B.V. Organic reactants for atomic layer deposition
US9859151B1 (en) 2016-07-08 2018-01-02 Asm Ip Holding B.V. Selective film deposition method to form air gaps
KR102532607B1 (ko) 2016-07-28 2023-05-15 에이에스엠 아이피 홀딩 비.브이. 기판 가공 장치 및 그 동작 방법
US9887082B1 (en) 2016-07-28 2018-02-06 Asm Ip Holding B.V. Method and apparatus for filling a gap
US9812320B1 (en) 2016-07-28 2017-11-07 Asm Ip Holding B.V. Method and apparatus for filling a gap
SG11201901463YA (en) * 2016-09-16 2019-03-28 Picosun Oy Apparatus and methods for atomic layer deposition
US11106145B2 (en) * 2016-10-17 2021-08-31 Nikon Corporation Exposure system and lithography system
US11532757B2 (en) 2016-10-27 2022-12-20 Asm Ip Holding B.V. Deposition of charge trapping layers
US10714350B2 (en) 2016-11-01 2020-07-14 ASM IP Holdings, B.V. Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures
KR102546317B1 (ko) 2016-11-15 2023-06-21 에이에스엠 아이피 홀딩 비.브이. 기체 공급 유닛 및 이를 포함하는 기판 처리 장치
KR20180068582A (ko) 2016-12-14 2018-06-22 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
US11447861B2 (en) 2016-12-15 2022-09-20 Asm Ip Holding B.V. Sequential infiltration synthesis apparatus and a method of forming a patterned structure
US11581186B2 (en) 2016-12-15 2023-02-14 Asm Ip Holding B.V. Sequential infiltration synthesis apparatus
KR102700194B1 (ko) 2016-12-19 2024-08-28 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
US10269558B2 (en) 2016-12-22 2019-04-23 Asm Ip Holding B.V. Method of forming a structure on a substrate
US11390950B2 (en) 2017-01-10 2022-07-19 Asm Ip Holding B.V. Reactor system and method to reduce residue buildup during a film deposition process
JP2018126795A (ja) * 2017-02-06 2018-08-16 セイコーエプソン株式会社 ロボットシステム
US10468261B2 (en) 2017-02-15 2019-11-05 Asm Ip Holding B.V. Methods for forming a metallic film on a substrate by cyclical deposition and related semiconductor device structures
US10529563B2 (en) 2017-03-29 2020-01-07 Asm Ip Holdings B.V. Method for forming doped metal oxide films on a substrate by cyclical deposition and related semiconductor device structures
US10770286B2 (en) 2017-05-08 2020-09-08 Asm Ip Holdings B.V. Methods for selectively forming a silicon nitride film on a substrate and related semiconductor device structures
US12040200B2 (en) 2017-06-20 2024-07-16 Asm Ip Holding B.V. Semiconductor processing apparatus and methods for calibrating a semiconductor processing apparatus
US11306395B2 (en) 2017-06-28 2022-04-19 Asm Ip Holding B.V. Methods for depositing a transition metal nitride film on a substrate by atomic layer deposition and related deposition apparatus
KR20190009245A (ko) 2017-07-18 2019-01-28 에이에스엠 아이피 홀딩 비.브이. 반도체 소자 구조물 형성 방법 및 관련된 반도체 소자 구조물
US10541333B2 (en) 2017-07-19 2020-01-21 Asm Ip Holding B.V. Method for depositing a group IV semiconductor and related semiconductor device structures
US11018002B2 (en) 2017-07-19 2021-05-25 Asm Ip Holding B.V. Method for selectively depositing a Group IV semiconductor and related semiconductor device structures
US11374112B2 (en) 2017-07-19 2022-06-28 Asm Ip Holding B.V. Method for depositing a group IV semiconductor and related semiconductor device structures
US10590535B2 (en) 2017-07-26 2020-03-17 Asm Ip Holdings B.V. Chemical treatment, deposition and/or infiltration apparatus and method for using the same
US10770336B2 (en) 2017-08-08 2020-09-08 Asm Ip Holding B.V. Substrate lift mechanism and reactor including same
US10692741B2 (en) 2017-08-08 2020-06-23 Asm Ip Holdings B.V. Radiation shield
US11139191B2 (en) 2017-08-09 2021-10-05 Asm Ip Holding B.V. Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith
US11769682B2 (en) 2017-08-09 2023-09-26 Asm Ip Holding B.V. Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith
US11830730B2 (en) 2017-08-29 2023-11-28 Asm Ip Holding B.V. Layer forming method and apparatus
US11295980B2 (en) 2017-08-30 2022-04-05 Asm Ip Holding B.V. Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures
US11056344B2 (en) 2017-08-30 2021-07-06 Asm Ip Holding B.V. Layer forming method
KR102491945B1 (ko) 2017-08-30 2023-01-26 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
US10658205B2 (en) 2017-09-28 2020-05-19 Asm Ip Holdings B.V. Chemical dispensing apparatus and methods for dispensing a chemical to a reaction chamber
US10403504B2 (en) 2017-10-05 2019-09-03 Asm Ip Holding B.V. Method for selectively depositing a metallic film on a substrate
US10923344B2 (en) 2017-10-30 2021-02-16 Asm Ip Holding B.V. Methods for forming a semiconductor structure and related semiconductor structures
US11022879B2 (en) 2017-11-24 2021-06-01 Asm Ip Holding B.V. Method of forming an enhanced unexposed photoresist layer
CN111344522B (zh) 2017-11-27 2022-04-12 阿斯莫Ip控股公司 包括洁净迷你环境的装置
KR102597978B1 (ko) 2017-11-27 2023-11-06 에이에스엠 아이피 홀딩 비.브이. 배치 퍼니스와 함께 사용하기 위한 웨이퍼 카세트를 보관하기 위한 보관 장치
US10872771B2 (en) 2018-01-16 2020-12-22 Asm Ip Holding B. V. Method for depositing a material film on a substrate within a reaction chamber by a cyclical deposition process and related device structures
TWI799494B (zh) 2018-01-19 2023-04-21 荷蘭商Ａｓｍ 智慧財產控股公司 沈積方法
CN111630203A (zh) 2018-01-19 2020-09-04 Asm Ip私人控股有限公司 通过等离子体辅助沉积来沉积间隙填充层的方法
US11081345B2 (en) 2018-02-06 2021-08-03 Asm Ip Holding B.V. Method of post-deposition treatment for silicon oxide film
US10896820B2 (en) 2018-02-14 2021-01-19 Asm Ip Holding B.V. Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process
US11685991B2 (en) 2018-02-14 2023-06-27 Asm Ip Holding B.V. Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process
KR102636427B1 (ko) 2018-02-20 2024-02-13 에이에스엠 아이피 홀딩 비.브이. 기판 처리 방법 및 장치
US10975470B2 (en) 2018-02-23 2021-04-13 Asm Ip Holding B.V. Apparatus for detecting or monitoring for a chemical precursor in a high temperature environment
US11473195B2 (en) 2018-03-01 2022-10-18 Asm Ip Holding B.V. Semiconductor processing apparatus and a method for processing a substrate
US11629406B2 (en) 2018-03-09 2023-04-18 Asm Ip Holding B.V. Semiconductor processing apparatus comprising one or more pyrometers for measuring a temperature of a substrate during transfer of the substrate
US11114283B2 (en) 2018-03-16 2021-09-07 Asm Ip Holding B.V. Reactor, system including the reactor, and methods of manufacturing and using same
KR102646467B1 (ko) 2018-03-27 2024-03-11 에이에스엠 아이피 홀딩 비.브이. 기판 상에 전극을 형성하는 방법 및 전극을 포함하는 반도체 소자 구조
US11088002B2 (en) 2018-03-29 2021-08-10 Asm Ip Holding B.V. Substrate rack and a substrate processing system and method
US11230766B2 (en) 2018-03-29 2022-01-25 Asm Ip Holding B.V. Substrate processing apparatus and method
CN108315695B (zh) * 2018-05-04 2023-11-17 苏州东福来机电科技有限公司 一种智能真空镀膜机构
CN108385081B (zh) * 2018-05-04 2024-01-12 华仪行(北京)科技有限公司 一种双仓自动镀膜装置
TWI811348B (zh) 2018-05-08 2023-08-11 荷蘭商Ａｓｍ 智慧財產控股公司 藉由循環沉積製程於基板上沉積氧化物膜之方法及相關裝置結構
US12025484B2 (en) 2018-05-08 2024-07-02 Asm Ip Holding B.V. Thin film forming method
KR102596988B1 (ko) 2018-05-28 2023-10-31 에이에스엠 아이피 홀딩 비.브이. 기판 처리 방법 및 그에 의해 제조된 장치
US11718913B2 (en) 2018-06-04 2023-08-08 Asm Ip Holding B.V. Gas distribution system and reactor system including same
TWI840362B (zh) 2018-06-04 2024-05-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 水氣降低的晶圓處置腔室
US11286562B2 (en) 2018-06-08 2022-03-29 Asm Ip Holding B.V. Gas-phase chemical reactor and method of using same
US10797133B2 (en) 2018-06-21 2020-10-06 Asm Ip Holding B.V. Method for depositing a phosphorus doped silicon arsenide film and related semiconductor device structures
KR102568797B1 (ko) 2018-06-21 2023-08-21 에이에스엠 아이피 홀딩 비.브이. 기판 처리 시스템
JP2021529254A (ja) 2018-06-27 2021-10-28 エーエスエム・アイピー・ホールディング・ベー・フェー 金属含有材料ならびに金属含有材料を含む膜および構造体を形成するための周期的堆積方法
TWI815915B (zh) 2018-06-27 2023-09-21 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於形成含金屬材料及包含含金屬材料的膜及結構之循環沉積方法
US10612136B2 (en) 2018-06-29 2020-04-07 ASM IP Holding, B.V. Temperature-controlled flange and reactor system including same
US10388513B1 (en) 2018-07-03 2019-08-20 Asm Ip Holding B.V. Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
US10755922B2 (en) 2018-07-03 2020-08-25 Asm Ip Holding B.V. Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
US11053591B2 (en) 2018-08-06 2021-07-06 Asm Ip Holding B.V. Multi-port gas injection system and reactor system including same
US11430674B2 (en) 2018-08-22 2022-08-30 Asm Ip Holding B.V. Sensor array, apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods
US11024523B2 (en) 2018-09-11 2021-06-01 Asm Ip Holding B.V. Substrate processing apparatus and method
KR102707956B1 (ko) 2018-09-11 2024-09-19 에이에스엠 아이피 홀딩 비.브이. 박막 증착 방법
US11049751B2 (en) 2018-09-14 2021-06-29 Asm Ip Holding B.V. Cassette supply system to store and handle cassettes and processing apparatus equipped therewith
KR20200038184A (ko) 2018-10-01 2020-04-10 에이에스엠 아이피 홀딩 비.브이. 기판 유지 장치, 장치를 포함하는 시스템, 및 이를 이용하는 방법
US11232963B2 (en) 2018-10-03 2022-01-25 Asm Ip Holding B.V. Substrate processing apparatus and method
KR102592699B1 (ko) 2018-10-08 2023-10-23 에이에스엠 아이피 홀딩 비.브이. 기판 지지 유닛 및 이를 포함하는 박막 증착 장치와 기판 처리 장치
KR102546322B1 (ko) 2018-10-19 2023-06-21 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치 및 기판 처리 방법
KR102605121B1 (ko) 2018-10-19 2023-11-23 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치 및 기판 처리 방법
USD948463S1 (en) 2018-10-24 2022-04-12 Asm Ip Holding B.V. Susceptor for semiconductor substrate supporting apparatus
US11087997B2 (en) * 2018-10-31 2021-08-10 Asm Ip Holding B.V. Substrate processing apparatus for processing substrates
KR20200051105A (ko) 2018-11-02 2020-05-13 에이에스엠 아이피 홀딩 비.브이. 기판 지지 유닛 및 이를 포함하는 기판 처리 장치
US11572620B2 (en) 2018-11-06 2023-02-07 Asm Ip Holding B.V. Methods for selectively depositing an amorphous silicon film on a substrate
US11031242B2 (en) 2018-11-07 2021-06-08 Asm Ip Holding B.V. Methods for depositing a boron doped silicon germanium film
US10818758B2 (en) 2018-11-16 2020-10-27 Asm Ip Holding B.V. Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures
US10847366B2 (en) 2018-11-16 2020-11-24 Asm Ip Holding B.V. Methods for depositing a transition metal chalcogenide film on a substrate by a cyclical deposition process
US12040199B2 (en) 2018-11-28 2024-07-16 Asm Ip Holding B.V. Substrate processing apparatus for processing substrates
US11217444B2 (en) 2018-11-30 2022-01-04 Asm Ip Holding B.V. Method for forming an ultraviolet radiation responsive metal oxide-containing film
KR102636428B1 (ko) 2018-12-04 2024-02-13 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치를 세정하는 방법
US11158513B2 (en) 2018-12-13 2021-10-26 Asm Ip Holding B.V. Methods for forming a rhenium-containing film on a substrate by a cyclical deposition process and related semiconductor device structures
TW202037745A (zh) 2018-12-14 2020-10-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 形成裝置結構之方法、其所形成之結構及施行其之系統
TW202405220A (zh) 2019-01-17 2024-02-01 荷蘭商Ａｓｍ Ｉｐ 私人控股有限公司 藉由循環沈積製程於基板上形成含過渡金屬膜之方法
KR20200091543A (ko) 2019-01-22 2020-07-31 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
CN111524788B (zh) 2019-02-01 2023-11-24 Asm Ip私人控股有限公司 氧化硅的拓扑选择性膜形成的方法
TW202044325A (zh) 2019-02-20 2020-12-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 填充一基板之一表面內所形成的一凹槽的方法、根據其所形成之半導體結構、及半導體處理設備
US11482533B2 (en) 2019-02-20 2022-10-25 Asm Ip Holding B.V. Apparatus and methods for plug fill deposition in 3-D NAND applications
TWI845607B (zh) 2019-02-20 2024-06-21 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用來填充形成於基材表面內之凹部的循環沉積方法及設備
KR102626263B1 (ko) 2019-02-20 2024-01-16 에이에스엠 아이피 홀딩 비.브이. 처리 단계를 포함하는 주기적 증착 방법 및 이를 위한 장치
TWI842826B (zh) 2019-02-22 2024-05-21 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 基材處理設備及處理基材之方法
KR20200108243A (ko) 2019-03-08 2020-09-17 에이에스엠 아이피 홀딩 비.브이. SiOC 층을 포함한 구조체 및 이의 형성 방법
KR20200108242A (ko) 2019-03-08 2020-09-17 에이에스엠 아이피 홀딩 비.브이. 실리콘 질화물 층을 선택적으로 증착하는 방법, 및 선택적으로 증착된 실리콘 질화물 층을 포함하는 구조체
KR20200108248A (ko) 2019-03-08 2020-09-17 에이에스엠 아이피 홀딩 비.브이. SiOCN 층을 포함한 구조체 및 이의 형성 방법
JP2020167398A (ja) 2019-03-28 2020-10-08 エーエスエム・アイピー・ホールディング・ベー・フェー ドアオープナーおよびドアオープナーが提供される基材処理装置
KR20200116855A (ko) 2019-04-01 2020-10-13 에이에스엠 아이피 홀딩 비.브이. 반도체 소자를 제조하는 방법
US20220171370A1 (en) * 2019-04-18 2022-06-02 Lam Research Corporation High density, controlled integrated circuits factory
US11447864B2 (en) 2019-04-19 2022-09-20 Asm Ip Holding B.V. Layer forming method and apparatus
KR20200125453A (ko) 2019-04-24 2020-11-04 에이에스엠 아이피 홀딩 비.브이. 기상 반응기 시스템 및 이를 사용하는 방법
KR20200130121A (ko) 2019-05-07 2020-11-18 에이에스엠 아이피 홀딩 비.브이. 딥 튜브가 있는 화학물질 공급원 용기
KR20200130118A (ko) 2019-05-07 2020-11-18 에이에스엠 아이피 홀딩 비.브이. 비정질 탄소 중합체 막을 개질하는 방법
KR20200130652A (ko) 2019-05-10 2020-11-19 에이에스엠 아이피 홀딩 비.브이. 표면 상에 재료를 증착하는 방법 및 본 방법에 따라 형성된 구조
JP2020188255A (ja) 2019-05-16 2020-11-19 エーエスエム アイピー ホールディング ビー．ブイ． ウェハボートハンドリング装置、縦型バッチ炉および方法
JP2020188254A (ja) 2019-05-16 2020-11-19 エーエスエム アイピー ホールディング ビー．ブイ． ウェハボートハンドリング装置、縦型バッチ炉および方法
USD947913S1 (en) 2019-05-17 2022-04-05 Asm Ip Holding B.V. Susceptor shaft
USD975665S1 (en) 2019-05-17 2023-01-17 Asm Ip Holding B.V. Susceptor shaft
USD935572S1 (en) 2019-05-24 2021-11-09 Asm Ip Holding B.V. Gas channel plate
USD922229S1 (en) 2019-06-05 2021-06-15 Asm Ip Holding B.V. Device for controlling a temperature of a gas supply unit
KR20200141002A (ko) 2019-06-06 2020-12-17 에이에스엠 아이피 홀딩 비.브이. 배기 가스 분석을 포함한 기상 반응기 시스템을 사용하는 방법
KR20200143254A (ko) 2019-06-11 2020-12-23 에이에스엠 아이피 홀딩 비.브이. 개질 가스를 사용하여 전자 구조를 형성하는 방법, 상기 방법을 수행하기 위한 시스템, 및 상기 방법을 사용하여 형성되는 구조
USD944946S1 (en) 2019-06-14 2022-03-01 Asm Ip Holding B.V. Shower plate
USD931978S1 (en) 2019-06-27 2021-09-28 Asm Ip Holding B.V. Showerhead vacuum transport
KR20210005515A (ko) 2019-07-03 2021-01-14 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치용 온도 제어 조립체 및 이를 사용하는 방법
JP7499079B2 (ja) 2019-07-09 2024-06-13 エーエスエム・アイピー・ホールディング・ベー・フェー 同軸導波管を用いたプラズマ装置、基板処理方法
CN112216646A (zh) 2019-07-10 2021-01-12 Asm Ip私人控股有限公司 基板支撑组件及包括其的基板处理装置
KR20210010307A (ko) 2019-07-16 2021-01-27 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
KR20210010816A (ko) 2019-07-17 2021-01-28 에이에스엠 아이피 홀딩 비.브이. 라디칼 보조 점화 플라즈마 시스템 및 방법
KR20210010820A (ko) 2019-07-17 2021-01-28 에이에스엠 아이피 홀딩 비.브이. 실리콘 게르마늄 구조를 형성하는 방법
US11643724B2 (en) 2019-07-18 2023-05-09 Asm Ip Holding B.V. Method of forming structures using a neutral beam
TWI839544B (zh) 2019-07-19 2024-04-21 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 形成形貌受控的非晶碳聚合物膜之方法
KR20210010817A (ko) 2019-07-19 2021-01-28 에이에스엠 아이피 홀딩 비.브이. 토폴로지-제어된 비정질 탄소 중합체 막을 형성하는 방법
CN112309843A (zh) 2019-07-29 2021-02-02 Asm Ip私人控股有限公司 实现高掺杂剂掺入的选择性沉积方法
CN112309899A (zh) 2019-07-30 2021-02-02 Asm Ip私人控股有限公司 基板处理设备
CN112309900A (zh) 2019-07-30 2021-02-02 Asm Ip私人控股有限公司 基板处理设备
US11587814B2 (en) 2019-07-31 2023-02-21 Asm Ip Holding B.V. Vertical batch furnace assembly
US11227782B2 (en) 2019-07-31 2022-01-18 Asm Ip Holding B.V. Vertical batch furnace assembly
US11587815B2 (en) 2019-07-31 2023-02-21 Asm Ip Holding B.V. Vertical batch furnace assembly
KR20210018759A (ko) 2019-08-05 2021-02-18 에이에스엠 아이피 홀딩 비.브이. 화학물질 공급원 용기를 위한 액체 레벨 센서
USD965524S1 (en) 2019-08-19 2022-10-04 Asm Ip Holding B.V. Susceptor support
USD965044S1 (en) 2019-08-19 2022-09-27 Asm Ip Holding B.V. Susceptor shaft
JP2021031769A (ja) 2019-08-21 2021-03-01 エーエスエム アイピー ホールディング ビー．ブイ． 成膜原料混合ガス生成装置及び成膜装置
USD949319S1 (en) 2019-08-22 2022-04-19 Asm Ip Holding B.V. Exhaust duct
USD979506S1 (en) 2019-08-22 2023-02-28 Asm Ip Holding B.V. Insulator
USD940837S1 (en) 2019-08-22 2022-01-11 Asm Ip Holding B.V. Electrode
KR20210024423A (ko) 2019-08-22 2021-03-05 에이에스엠 아이피 홀딩 비.브이. 홀을 구비한 구조체를 형성하기 위한 방법
USD930782S1 (en) 2019-08-22 2021-09-14 Asm Ip Holding B.V. Gas distributor
US11286558B2 (en) 2019-08-23 2022-03-29 Asm Ip Holding B.V. Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film
KR20210024420A (ko) 2019-08-23 2021-03-05 에이에스엠 아이피 홀딩 비.브이. 비스(디에틸아미노)실란을 사용하여 peald에 의해 개선된 품질을 갖는 실리콘 산화물 막을 증착하기 위한 방법
KR20210029090A (ko) 2019-09-04 2021-03-15 에이에스엠 아이피 홀딩 비.브이. 희생 캡핑 층을 이용한 선택적 증착 방법
KR20210029663A (ko) 2019-09-05 2021-03-16 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
US11562901B2 (en) 2019-09-25 2023-01-24 Asm Ip Holding B.V. Substrate processing method
CN112593212B (zh) 2019-10-02 2023-12-22 Asm Ip私人控股有限公司 通过循环等离子体增强沉积工艺形成拓扑选择性氧化硅膜的方法
TWI846953B (zh) 2019-10-08 2024-07-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 基板處理裝置
KR20210042810A (ko) 2019-10-08 2021-04-20 에이에스엠 아이피 홀딩 비.브이. 활성 종을 이용하기 위한 가스 분배 어셈블리를 포함한 반응기 시스템 및 이를 사용하는 방법
TWI846966B (zh) 2019-10-10 2024-07-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 形成光阻底層之方法及包括光阻底層之結構
US12009241B2 (en) 2019-10-14 2024-06-11 Asm Ip Holding B.V. Vertical batch furnace assembly with detector to detect cassette
TWI834919B (zh) 2019-10-16 2024-03-11 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 氧化矽之拓撲選擇性膜形成之方法
US11637014B2 (en) 2019-10-17 2023-04-25 Asm Ip Holding B.V. Methods for selective deposition of doped semiconductor material
KR20210047808A (ko) 2019-10-21 2021-04-30 에이에스엠 아이피 홀딩 비.브이. 막을 선택적으로 에칭하기 위한 장치 및 방법
KR20210050453A (ko) 2019-10-25 2021-05-07 에이에스엠 아이피 홀딩 비.브이. 기판 표면 상의 갭 피처를 충진하는 방법 및 이와 관련된 반도체 소자 구조
US11646205B2 (en) 2019-10-29 2023-05-09 Asm Ip Holding B.V. Methods of selectively forming n-type doped material on a surface, systems for selectively forming n-type doped material, and structures formed using same
KR20210054983A (ko) 2019-11-05 2021-05-14 에이에스엠 아이피 홀딩 비.브이. 도핑된 반도체 층을 갖는 구조체 및 이를 형성하기 위한 방법 및 시스템
US11501968B2 (en) 2019-11-15 2022-11-15 Asm Ip Holding B.V. Method for providing a semiconductor device with silicon filled gaps
KR20210062561A (ko) 2019-11-20 2021-05-31 에이에스엠 아이피 홀딩 비.브이. 기판의 표면 상에 탄소 함유 물질을 증착하는 방법, 상기 방법을 사용하여 형성된 구조물, 및 상기 구조물을 형성하기 위한 시스템
CN112951697A (zh) 2019-11-26 2021-06-11 Asm Ip私人控股有限公司 基板处理设备
US11450529B2 (en) 2019-11-26 2022-09-20 Asm Ip Holding B.V. Methods for selectively forming a target film on a substrate comprising a first dielectric surface and a second metallic surface
CN112885693A (zh) 2019-11-29 2021-06-01 Asm Ip私人控股有限公司 基板处理设备
CN112885692A (zh) 2019-11-29 2021-06-01 Asm Ip私人控股有限公司 基板处理设备
JP7527928B2 (ja) 2019-12-02 2024-08-05 エーエスエム・アイピー・ホールディング・ベー・フェー 基板処理装置、基板処理方法
KR20210070898A (ko) 2019-12-04 2021-06-15 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
TW202125596A (zh) 2019-12-17 2021-07-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 形成氮化釩層之方法以及包括該氮化釩層之結構
KR20210080214A (ko) 2019-12-19 2021-06-30 에이에스엠 아이피 홀딩 비.브이. 기판 상의 갭 피처를 충진하는 방법 및 이와 관련된 반도체 소자 구조
JP2021109175A (ja) 2020-01-06 2021-08-02 エーエスエム・アイピー・ホールディング・ベー・フェー ガス供給アセンブリ、その構成要素、およびこれを含む反応器システム
TW202142733A (zh) 2020-01-06 2021-11-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 反應器系統、抬升銷、及處理方法
US11993847B2 (en) 2020-01-08 2024-05-28 Asm Ip Holding B.V. Injector
KR102675856B1 (ko) 2020-01-20 2024-06-17 에이에스엠 아이피 홀딩 비.브이. 박막 형성 방법 및 박막 표면 개질 방법
TW202130846A (zh) 2020-02-03 2021-08-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 形成包括釩或銦層的結構之方法
TW202146882A (zh) 2020-02-04 2021-12-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 驗證一物品之方法、用於驗證一物品之設備、及用於驗證一反應室之系統
US11776846B2 (en) 2020-02-07 2023-10-03 Asm Ip Holding B.V. Methods for depositing gap filling fluids and related systems and devices
US11781243B2 (en) 2020-02-17 2023-10-10 Asm Ip Holding B.V. Method for depositing low temperature phosphorous-doped silicon
TW202203344A (zh) 2020-02-28 2022-01-16 荷蘭商Ａｓｍ Ｉｐ控股公司 專用於零件清潔的系統
KR20210116240A (ko) 2020-03-11 2021-09-27 에이에스엠 아이피 홀딩 비.브이. 조절성 접합부를 갖는 기판 핸들링 장치
US11876356B2 (en) 2020-03-11 2024-01-16 Asm Ip Holding B.V. Lockout tagout assembly and system and method of using same
KR20210117157A (ko) 2020-03-12 2021-09-28 에이에스엠 아이피 홀딩 비.브이. 타겟 토폴로지 프로파일을 갖는 층 구조를 제조하기 위한 방법
KR20210124042A (ko) 2020-04-02 2021-10-14 에이에스엠 아이피 홀딩 비.브이. 박막 형성 방법
TW202146689A (zh) 2020-04-03 2021-12-16 荷蘭商Ａｓｍ Ｉｐ控股公司 阻障層形成方法及半導體裝置的製造方法
TW202145344A (zh) 2020-04-08 2021-12-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於選擇性蝕刻氧化矽膜之設備及方法
US11821078B2 (en) 2020-04-15 2023-11-21 Asm Ip Holding B.V. Method for forming precoat film and method for forming silicon-containing film
KR20210128343A (ko) 2020-04-15 2021-10-26 에이에스엠 아이피 홀딩 비.브이. 크롬 나이트라이드 층을 형성하는 방법 및 크롬 나이트라이드 층을 포함하는 구조
US11996289B2 (en) 2020-04-16 2024-05-28 Asm Ip Holding B.V. Methods of forming structures including silicon germanium and silicon layers, devices formed using the methods, and systems for performing the methods
KR20210132576A (ko) 2020-04-24 2021-11-04 에이에스엠 아이피 홀딩 비.브이. 바나듐 나이트라이드 함유 층을 형성하는 방법 및 이를 포함하는 구조
KR20210132600A (ko) 2020-04-24 2021-11-04 에이에스엠 아이피 홀딩 비.브이. 바나듐, 질소 및 추가 원소를 포함한 층을 증착하기 위한 방법 및 시스템
TW202146831A (zh) 2020-04-24 2021-12-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 垂直批式熔爐總成、及用於冷卻垂直批式熔爐之方法
KR20210134226A (ko) 2020-04-29 2021-11-09 에이에스엠 아이피 홀딩 비.브이. 고체 소스 전구체 용기
KR20210134869A (ko) 2020-05-01 2021-11-11 에이에스엠 아이피 홀딩 비.브이. Foup 핸들러를 이용한 foup의 빠른 교환
TW202147543A (zh) 2020-05-04 2021-12-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 半導體處理系統
KR20210141379A (ko) 2020-05-13 2021-11-23 에이에스엠 아이피 홀딩 비.브이. 반응기 시스템용 레이저 정렬 고정구
TW202146699A (zh) 2020-05-15 2021-12-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 形成矽鍺層之方法、半導體結構、半導體裝置、形成沉積層之方法、及沉積系統
KR20210143653A (ko) 2020-05-19 2021-11-29 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
KR20210145078A (ko) 2020-05-21 2021-12-01 에이에스엠 아이피 홀딩 비.브이. 다수의 탄소 층을 포함한 구조체 및 이를 형성하고 사용하는 방법
KR102702526B1 (ko) 2020-05-22 2024-09-03 에이에스엠 아이피 홀딩 비.브이. 과산화수소를 사용하여 박막을 증착하기 위한 장치
TW202201602A (zh) 2020-05-29 2022-01-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 基板處理方法
TW202212620A (zh) 2020-06-02 2022-04-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 處理基板之設備、形成膜之方法、及控制用於處理基板之設備之方法
TWI770537B (zh) * 2020-06-23 2022-07-11 志聖工業股份有限公司 雙面曝光設備及曝光裝置
TW202218133A (zh) 2020-06-24 2022-05-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 形成含矽層之方法
TW202217953A (zh) 2020-06-30 2022-05-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 基板處理方法
TW202202649A (zh) 2020-07-08 2022-01-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 基板處理方法
KR20220010438A (ko) 2020-07-17 2022-01-25 에이에스엠 아이피 홀딩 비.브이. 포토리소그래피에 사용하기 위한 구조체 및 방법
TW202204662A (zh) 2020-07-20 2022-02-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於沉積鉬層之方法及系統
US12040177B2 (en) 2020-08-18 2024-07-16 Asm Ip Holding B.V. Methods for forming a laminate film by cyclical plasma-enhanced deposition processes
KR20220027026A (ko) 2020-08-26 2022-03-07 에이에스엠 아이피 홀딩 비.브이. 금속 실리콘 산화물 및 금속 실리콘 산질화물 층을 형성하기 위한 방법 및 시스템
TW202229601A (zh) 2020-08-27 2022-08-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 形成圖案化結構的方法、操控機械特性的方法、裝置結構、及基板處理系統
USD990534S1 (en) 2020-09-11 2023-06-27 Asm Ip Holding B.V. Weighted lift pin
USD1012873S1 (en) 2020-09-24 2024-01-30 Asm Ip Holding B.V. Electrode for semiconductor processing apparatus
US12009224B2 (en) 2020-09-29 2024-06-11 Asm Ip Holding B.V. Apparatus and method for etching metal nitrides
KR20220045900A (ko) 2020-10-06 2022-04-13 에이에스엠 아이피 홀딩 비.브이. 실리콘 함유 재료를 증착하기 위한 증착 방법 및 장치
CN114293174A (zh) 2020-10-07 2022-04-08 Asm Ip私人控股有限公司 气体供应单元和包括气体供应单元的衬底处理设备
TW202229613A (zh) 2020-10-14 2022-08-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 於階梯式結構上沉積材料的方法
TW202217037A (zh) 2020-10-22 2022-05-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 沉積釩金屬的方法、結構、裝置及沉積總成
TW202223136A (zh) 2020-10-28 2022-06-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於在基板上形成層之方法、及半導體處理系統
TW202235649A (zh) 2020-11-24 2022-09-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 填充間隙之方法與相關之系統及裝置
TW202235675A (zh) 2020-11-30 2022-09-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 注入器、及基板處理設備
US11946137B2 (en) 2020-12-16 2024-04-02 Asm Ip Holding B.V. Runout and wobble measurement fixtures
TW202231903A (zh) 2020-12-22 2022-08-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 過渡金屬沉積方法、過渡金屬層、用於沉積過渡金屬於基板上的沉積總成
JPWO2022208923A1 (de) 2021-03-29 2022-10-06
USD980813S1 (en) 2021-05-11 2023-03-14 Asm Ip Holding B.V. Gas flow control plate for substrate processing apparatus
USD981973S1 (en) 2021-05-11 2023-03-28 Asm Ip Holding B.V. Reactor wall for substrate processing apparatus
USD980814S1 (en) 2021-05-11 2023-03-14 Asm Ip Holding B.V. Gas distributor for substrate processing apparatus
USD1023959S1 (en) 2021-05-11 2024-04-23 Asm Ip Holding B.V. Electrode for substrate processing apparatus
USD990441S1 (en) 2021-09-07 2023-06-27 Asm Ip Holding B.V. Gas flow control plate

Family Cites Families (166)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS472971U (de) 1971-01-27 1972-09-01
US4314582A (en) * 1976-03-23 1982-02-09 Mordeki Drori Combined pressure-regulator and manual shut-off valve
JPS55141570A (en) * 1979-04-18 1980-11-05 Anelva Corp Dry etching apparatus
JPS5619635A (en) * 1979-07-27 1981-02-24 Hitachi Ltd Manufacturing apparatus
DE2940064A1 (de) * 1979-10-03 1981-04-16 Leybold-Heraeus GmbH, 5000 Köln Vakuumaufdampfanlage mir einer ventilkammer, einer bedampfungskammer und einer verdampferkammer
US4341582A (en) 1980-12-22 1982-07-27 The Perkin-Elmer Corporation Load-lock vacuum chamber
US4500407A (en) * 1983-07-19 1985-02-19 Varian Associates, Inc. Disk or wafer handling and coating system
US4861222A (en) * 1984-03-09 1989-08-29 Tegal Corporation Cassette elevator for use in a modular article processing machine
JPS60246635A (ja) * 1984-05-22 1985-12-06 Anelva Corp 自動基板処理装置
JPS618153A (ja) * 1984-06-22 1986-01-14 Mitsubishi Heavy Ind Ltd スプレ−ノズル
JPS61105853A (ja) * 1984-10-30 1986-05-23 Anelva Corp オ−トロ−ダ−
US4693777A (en) * 1984-11-30 1987-09-15 Kabushiki Kaisha Toshiba Apparatus for producing semiconductor devices
US5280983A (en) * 1985-01-22 1994-01-25 Applied Materials, Inc. Semiconductor processing system with robotic autoloader and load lock
US5224809A (en) * 1985-01-22 1993-07-06 Applied Materials, Inc. Semiconductor processing system with robotic autoloader and load lock
US5004924A (en) * 1985-01-28 1991-04-02 Tokyo Electron Limited Wafer transport apparatus for ion implantation apparatus
US4705951A (en) * 1986-04-17 1987-11-10 Varian Associates, Inc. Wafer processing system
US4715921A (en) * 1986-10-24 1987-12-29 General Signal Corporation Quad processor
US4836733A (en) * 1986-04-28 1989-06-06 Varian Associates, Inc. Wafer transfer system
US4670126A (en) * 1986-04-28 1987-06-02 Varian Associates, Inc. Sputter module for modular wafer processing system
JPS63369A (ja) 1986-06-19 1988-01-05 Nippon Shokubai Kagaku Kogyo Co Ltd 新規塗料用樹脂およびそれを含んでなる塗料用樹脂組成物
US4676884A (en) * 1986-07-23 1987-06-30 The Boc Group, Inc. Wafer processing machine with evacuated wafer transporting and storage system
NZ222903A (en) * 1986-12-17 1990-07-26 Focas Ltd Optical fibre connector: heat shrinkable sleeve
US5882165A (en) * 1986-12-19 1999-03-16 Applied Materials, Inc. Multiple chamber integrated process system
JPS63157870A (ja) * 1986-12-19 1988-06-30 Anelva Corp 基板処理装置
US4951601A (en) * 1986-12-19 1990-08-28 Applied Materials, Inc. Multi-chamber integrated process system
JPS63209702A (ja) 1987-02-25 1988-08-31 Ishikawajima Harima Heavy Ind Co Ltd 結晶缶の運転方法
JPS6464231A (en) * 1987-09-03 1989-03-10 Toshiba Corp Conveyor
JP2958005B2 (ja) 1988-01-22 1999-10-06 富士通株式会社 不等間隔データファイルのアクセス方法
US5177514A (en) * 1988-02-12 1993-01-05 Tokyo Electron Limited Apparatus for coating a photo-resist film and/or developing it after being exposed
KR970003907B1 (ko) * 1988-02-12 1997-03-22 도오교오 에레구토론 가부시끼 가이샤 기판처리 장치 및 기판처리 방법
JPH01225321A (ja) 1988-03-04 1989-09-08 Mitsubishi Electric Corp 半導体ウエハの処理装置
US4908095A (en) * 1988-05-02 1990-03-13 Tokyo Electron Limited Etching device, and etching method
JPH01305533A (ja) 1988-06-03 1989-12-08 Toshiba Corp 搬送装置
US4857160A (en) * 1988-07-25 1989-08-15 Oerlikon-Buhrle U.S.A. Inc. High vacuum processing system and method
US5024570A (en) * 1988-09-14 1991-06-18 Fujitsu Limited Continuous semiconductor substrate processing system
US5017915A (en) 1988-09-19 1991-05-21 Dang Mieu Hong Method of enhancing communication setup between a communication station and a telecommunications network
US5536128A (en) * 1988-10-21 1996-07-16 Hitachi, Ltd. Method and apparatus for carrying a variety of products
US5019233A (en) * 1988-10-31 1991-05-28 Eaton Corporation Sputtering system
US5217340A (en) * 1989-01-28 1993-06-08 Kokusai Electric Co., Ltd. Wafer transfer mechanism in vertical CVD diffusion apparatus
JP2528962B2 (ja) * 1989-02-27 1996-08-28 株式会社日立製作所 試料処理方法及び装置
US5868854A (en) 1989-02-27 1999-02-09 Hitachi, Ltd. Method and apparatus for processing samples
JPH02234095A (ja) 1989-03-08 1990-09-17 Ishikawajima Harima Heavy Ind Co Ltd 原子炉圧力容器の蒸気逃し管系の耐圧試験方法
US5110248A (en) * 1989-07-17 1992-05-05 Tokyo Electron Sagami Limited Vertical heat-treatment apparatus having a wafer transfer mechanism
KR0155158B1 (ko) * 1989-07-25 1998-12-01 카자마 젠쥬 종형 처리 장치 및 처리방법
US5254170A (en) * 1989-08-07 1993-10-19 Asm Vt, Inc. Enhanced vertical thermal reactor system
WO1991004213A1 (en) * 1989-09-12 1991-04-04 Rapro Technology, Inc. Automated wafer transport system
JPH03154751A (ja) * 1989-11-08 1991-07-02 Hitachi Ltd 多品種搬送方法及び装置
JP2893882B2 (ja) 1990-07-11 1999-05-24 三菱電機株式会社 アクティブフィルタ装置
JPH0471692A (ja) 1990-07-12 1992-03-06 Hitachi Ltd 微生物撮像装置
JP3128229B2 (ja) 1990-07-13 2001-01-29 ソニー株式会社 液晶ディスプレイ装置
TW221318B (de) * 1990-07-31 1994-02-21 Tokyo Electron Co Ltd
JP2644912B2 (ja) * 1990-08-29 1997-08-25 株式会社日立製作所 真空処理装置及びその運転方法
KR100212874B1 (en) * 1990-08-29 1999-09-01 Hitachi Ltd Transferring system and vacuum treating apparatus thereby
US5436848A (en) * 1990-09-03 1995-07-25 Dainippon Screen Mfg. Co., Ltd. Method of and device for transporting semiconductor substrate in semiconductor processing system
JP2525284B2 (ja) * 1990-10-22 1996-08-14 ティーディーケイ株式会社 クリ―ン搬送方法及び装置
US5169272A (en) * 1990-11-01 1992-12-08 Asyst Technologies, Inc. Method and apparatus for transferring articles between two controlled environments
JP2595132B2 (ja) * 1990-11-26 1997-03-26 株式会社日立製作所 真空処理装置
US5286296A (en) * 1991-01-10 1994-02-15 Sony Corporation Multi-chamber wafer process equipment having plural, physically communicating transfer means
JPH04247632A (ja) 1991-02-01 1992-09-03 Fujitsu Ltd 半導体装置
JPH05275511A (ja) * 1991-03-01 1993-10-22 Tokyo Electron Ltd 被処理体の移載システム及び処理装置
JP2986121B2 (ja) * 1991-03-26 1999-12-06 東京エレクトロン株式会社 ロードロック装置及び真空処理装置
JPH04298060A (ja) * 1991-03-26 1992-10-21 Tokyo Electron Ltd ウエハの位置合わせ装置
JPH04298059A (ja) 1991-03-27 1992-10-21 Hitachi Ltd 真空処理装置
US5271732A (en) * 1991-04-03 1993-12-21 Tokyo Electron Sagami Kabushiki Kaisha Heat-treating apparatus
US5326316A (en) * 1991-04-17 1994-07-05 Matsushita Electric Industrial Co., Ltd. Coupling type clean space apparatus
JPH0521466A (ja) 1991-07-16 1993-01-29 Nec Kansai Ltd 電界効果型トランジスタの製造方法
JP3309997B2 (ja) * 1991-09-05 2002-07-29 株式会社日立製作所 複合処理装置
US5215420A (en) * 1991-09-20 1993-06-01 Intevac, Inc. Substrate handling and processing system
JPH05136245A (ja) 1991-11-08 1993-06-01 Tokyo Electron Ltd 半導体製造装置
US5256204A (en) * 1991-12-13 1993-10-26 United Microelectronics Corporation Single semiconductor water transfer method and manufacturing system
JP2751975B2 (ja) * 1991-12-20 1998-05-18 株式会社日立製作所 半導体処理装置のロードロック室
US5468111A (en) * 1992-01-22 1995-11-21 Seagate Technology, Inc. Disc loading and unloading assembly
JP2867194B2 (ja) * 1992-02-05 1999-03-08 東京エレクトロン株式会社 処理装置及び処理方法
JPH0630369A (ja) * 1992-02-06 1994-02-04 Nec Corp 遅延画像データ出力ビデオカメラ
JPH05218176A (ja) * 1992-02-07 1993-08-27 Tokyo Electron Tohoku Kk 熱処理方法及び被処理体の移載方法
US5376212A (en) * 1992-02-18 1994-12-27 Tokyo Electron Yamanashi Limited Reduced-pressure processing apparatus
JP3030160B2 (ja) * 1992-04-28 2000-04-10 東京エレクトロン株式会社 真空処理装置
US5534072A (en) * 1992-06-24 1996-07-09 Anelva Corporation Integrated module multi-chamber CVD processing system and its method for processing subtrates
JP3046678B2 (ja) 1992-07-15 2000-05-29 松下電工株式会社 ２段駐車装置
JP3139155B2 (ja) * 1992-07-29 2001-02-26 東京エレクトロン株式会社 真空処理装置
JPH0653304A (ja) 1992-07-29 1994-02-25 Tokyo Electron Ltd 減圧処理装置
US5558482A (en) * 1992-07-29 1996-09-24 Tokyo Electron Limited Multi-chamber system
JPH0697080A (ja) * 1992-09-10 1994-04-08 Mitsubishi Electric Corp 化学気相成長装置用反応室および該反応室を用いた化学気相成長装置
JP3350107B2 (ja) 1992-09-17 2002-11-25 株式会社日立製作所 枚葉式真空処理装置
JP2655975B2 (ja) * 1992-09-18 1997-09-24 三菱マテリアル株式会社 ウェーハ研磨装置
JP3151582B2 (ja) * 1993-04-28 2001-04-03 東京エレクトロン株式会社 真空処理装置
JP3172331B2 (ja) * 1993-04-28 2001-06-04 東京エレクトロン株式会社 真空処理装置
JPH06155697A (ja) 1992-11-19 1994-06-03 Toppan Printing Co Ltd カタログ類等の文字割付装置
US5444217A (en) * 1993-01-21 1995-08-22 Moore Epitaxial Inc. Rapid thermal processing apparatus for processing semiconductor wafers
US5607009A (en) * 1993-01-28 1997-03-04 Applied Materials, Inc. Method of heating and cooling large area substrates and apparatus therefor
DE69304038T2 (de) * 1993-01-28 1996-12-19 Applied Materials Inc Vorrichtung für ein Vakuumverfahren mit verbessertem Durchsatz
JP3258748B2 (ja) * 1993-02-08 2002-02-18 東京エレクトロン株式会社 熱処理装置
JPH06236914A (ja) * 1993-02-09 1994-08-23 Mitsubishi Electric Corp 半導体製造設備
US5527390A (en) * 1993-03-19 1996-06-18 Tokyo Electron Kabushiki Treatment system including a plurality of treatment apparatus
JP3332982B2 (ja) * 1993-03-19 2002-10-07 東京エレクトロン株式会社 基板処理システムおよびキャリア搬送装置
KR100221983B1 (ko) * 1993-04-13 1999-09-15 히가시 데쓰로 처리장치
KR100267617B1 (ko) * 1993-04-23 2000-10-16 히가시 데쓰로 진공처리장치 및 진공처리방법
US5417537A (en) * 1993-05-07 1995-05-23 Miller; Kenneth C. Wafer transport device
US5466117A (en) * 1993-06-10 1995-11-14 Xilinx, Inc. Device and method for programming multiple arrays of semiconductor devices
JP2969034B2 (ja) * 1993-06-18 1999-11-02 東京エレクトロン株式会社 搬送方法および搬送装置
JPH0722490A (ja) * 1993-06-30 1995-01-24 Mitsubishi Electric Corp ロット自動編成装置及び方法
TW264601B (de) 1993-09-17 1995-12-01 Hitachi Seisakusyo Kk
US5570990A (en) * 1993-11-05 1996-11-05 Asyst Technologies, Inc. Human guided mobile loader stocker
US5851602A (en) * 1993-12-09 1998-12-22 Applied Materials, Inc. Deposition of high quality conformal silicon oxide thin films for the manufacture of thin film transistors
EP0663686B1 (de) * 1994-01-14 1997-06-18 International Business Machines Corporation Zusammenbau-/Ausbau-Einrichtung für abdichtbaren unter Druck stehenden Transportbehälter
JP3264076B2 (ja) * 1994-01-31 2002-03-11 松下電器産業株式会社 真空処理装置
US5645419A (en) * 1994-03-29 1997-07-08 Tokyo Electron Kabushiki Kaisha Heat treatment method and device
US5563798A (en) * 1994-04-05 1996-10-08 Applied Materials, Inc. Wafer positioning system
US5934856A (en) * 1994-05-23 1999-08-10 Tokyo Electron Limited Multi-chamber treatment system
US5826129A (en) * 1994-06-30 1998-10-20 Tokyo Electron Limited Substrate processing system
JP3453223B2 (ja) * 1994-08-19 2003-10-06 東京エレクトロン株式会社 処理装置
TW295677B (de) * 1994-08-19 1997-01-11 Tokyo Electron Co Ltd
JPH0864732A (ja) 1994-08-26 1996-03-08 Mitsubishi Electric Corp 半導体集積回路装置
KR0152324B1 (ko) 1994-12-06 1998-12-01 양승택 웨이퍼 측면파지 이송 반도체 제조장치
TW315504B (de) * 1995-03-20 1997-09-11 Tokyo Electron Co Ltd
JPH08288355A (ja) * 1995-04-12 1996-11-01 Nikon Corp 基板搬送装置
US5672239A (en) * 1995-05-10 1997-09-30 Tegal Corporation Integrated semiconductor wafer processing system
TW319751B (de) * 1995-05-18 1997-11-11 Toshiba Co Ltd
JP3347528B2 (ja) * 1995-05-23 2002-11-20 キヤノン株式会社 半導体製造装置
TW309503B (de) * 1995-06-27 1997-07-01 Tokyo Electron Co Ltd
US5653565A (en) * 1995-07-05 1997-08-05 Asyst Technologies, Inc. SMIF port interface adaptor
US5664925A (en) * 1995-07-06 1997-09-09 Brooks Automation, Inc. Batchloader for load lock
US6672819B1 (en) * 1995-07-19 2004-01-06 Hitachi, Ltd. Vacuum processing apparatus and semiconductor manufacturing line using the same
JPH0936198A (ja) * 1995-07-19 1997-02-07 Hitachi Ltd 真空処理装置およびそれを用いた半導体製造ライン
JP3658110B2 (ja) * 1995-11-27 2005-06-08 キヤノン株式会社 画像表示装置のための製造方法及び製造装置
US5830322A (en) * 1996-02-13 1998-11-03 Thermo Fibertek Inc. Velocity induced drainage method and unit
US5944940A (en) * 1996-07-09 1999-08-31 Gamma Precision Technology, Inc. Wafer transfer system and method of using the same
US5900105A (en) * 1996-07-09 1999-05-04 Gamma Precision Technology, Inc. Wafer transfer system and method of using the same
US6714832B1 (en) * 1996-09-11 2004-03-30 Hitachi, Ltd. Operating method of vacuum processing system and vacuum processing system
TW466622B (en) * 1996-09-11 2001-12-01 Hitachi Ltd Operating method of vacuum processing device and vacuum processing device
JP3788533B2 (ja) * 1996-09-30 2006-06-21 東京エレクトロン株式会社 研磨装置および研磨方法
JPH10107122A (ja) * 1996-10-01 1998-04-24 Tokyo Electron Ltd 被処理基板カセットの搬入装置
US5928389A (en) * 1996-10-21 1999-07-27 Applied Materials, Inc. Method and apparatus for priority based scheduling of wafer processing within a multiple chamber semiconductor wafer processing tool
US5905302A (en) * 1996-11-18 1999-05-18 Applied Materials, Inc. Loadlock cassette with wafer support rails
US5810395A (en) * 1996-12-30 1998-09-22 Morgan; Dale C. Method for recording and tracking the progress of activities
US6257827B1 (en) * 1997-12-01 2001-07-10 Brooks Automation Inc. Apparatus and method for transporting substrates
US6270306B1 (en) * 1998-01-14 2001-08-07 Applied Materials, Inc. Wafer aligner in center of front end frame of vacuum system
US6057662A (en) * 1998-02-25 2000-05-02 Applied Materials, Inc. Single motor control for substrate handler in processing system
JP4674705B2 (ja) * 1998-10-27 2011-04-20 東京エレクトロン株式会社 搬送システムの搬送位置合わせ方法及び搬送システム
WO2000028587A1 (fr) * 1998-11-09 2000-05-18 Tokyo Electron Limited Dispositif de traitement
TW442891B (en) * 1998-11-17 2001-06-23 Tokyo Electron Ltd Vacuum processing system
US6610150B1 (en) * 1999-04-02 2003-08-26 Asml Us, Inc. Semiconductor wafer processing system with vertically-stacked process chambers and single-axis dual-wafer transfer system
JP2001127044A (ja) * 1999-10-29 2001-05-11 Hitachi Ltd 真空処理装置および真空処理システム
US6558509B2 (en) * 1999-11-30 2003-05-06 Applied Materials, Inc. Dual wafer load lock
US6698991B1 (en) * 2000-03-02 2004-03-02 Applied Materials, Inc. Fabrication system with extensible equipment sets
US6506009B1 (en) * 2000-03-16 2003-01-14 Applied Materials, Inc. Apparatus for storing and moving a cassette
JP4021125B2 (ja) * 2000-06-02 2007-12-12 東京エレクトロン株式会社 ウェハ移載装置の装置ユニット接続時に用いられるレールの真直性保持装置
JP4915033B2 (ja) * 2000-06-15 2012-04-11 株式会社ニコン 露光装置、基板処理装置及びリソグラフィシステム、並びにデバイス製造方法
JP2002026108A (ja) * 2000-07-12 2002-01-25 Tokyo Electron Ltd 被処理体の移載機構、処理システム及び移載機構の使用方法
US6568896B2 (en) * 2001-03-21 2003-05-27 Applied Materials, Inc. Transfer chamber with side wall port
JP4937459B2 (ja) * 2001-04-06 2012-05-23 東京エレクトロン株式会社 クラスタツールおよび搬送制御方法
US6852194B2 (en) * 2001-05-21 2005-02-08 Tokyo Electron Limited Processing apparatus, transferring apparatus and transferring method
US6752585B2 (en) * 2001-06-13 2004-06-22 Applied Materials Inc Method and apparatus for transferring a semiconductor substrate
US6672864B2 (en) * 2001-08-31 2004-01-06 Applied Materials, Inc. Method and apparatus for processing substrates in a system having high and low pressure areas
US6729824B2 (en) * 2001-12-14 2004-05-04 Applied Materials, Inc. Dual robot processing system
JP2003264214A (ja) * 2002-03-07 2003-09-19 Hitachi High-Technologies Corp 真空処理装置及び真空処理方法
JP4254116B2 (ja) * 2002-03-22 2009-04-15 東京エレクトロン株式会社 位置合わせ用基板
US7204669B2 (en) * 2002-07-17 2007-04-17 Applied Materials, Inc. Semiconductor substrate damage protection system
US6696367B1 (en) * 2002-09-27 2004-02-24 Asm America, Inc. System for the improved handling of wafers within a process tool
CN1711369B (zh) * 2002-11-15 2011-07-13 欧瑞康日光特吕巴赫股份公司 用于真空处理两维加长基片的装置及加工这种基片的方法
KR100562500B1 (ko) * 2003-02-25 2006-03-21 삼성전자주식회사 기판 이송 시스템 및 기판 이송 방법
US7207766B2 (en) * 2003-10-20 2007-04-24 Applied Materials, Inc. Load lock chamber for large area substrate processing system
US7458763B2 (en) * 2003-11-10 2008-12-02 Blueshift Technologies, Inc. Mid-entry load lock for semiconductor handling system
US7226269B2 (en) * 2004-01-15 2007-06-05 Applied Materials, Inc. Substrate edge grip apparatus
KR100558558B1 (ko) * 2004-01-26 2006-03-10 삼성전자주식회사 멀티챔버 프로세스장치
JP4128973B2 (ja) * 2004-03-30 2008-07-30 株式会社日立ハイテクノロジーズ 真空処理装置及び真空処理方法

Also Published As

Publication number Publication date
US20010025207A1 (en) 2001-09-27
DE69633487D1 (de) 2004-11-04
EP0756316A1 (de) 1997-01-29
EP0756316B1 (de) 2004-09-29
DE69637878D1 (de) 2009-04-30
US20090220322A1 (en) 2009-09-03
DE69636872T2 (de) 2007-09-20
US20040118005A1 (en) 2004-06-24
EP1119022B1 (de) 2007-01-24
US20080138180A1 (en) 2008-06-12
US6519504B1 (en) 2003-02-11
EP1119022A2 (de) 2001-07-25
US20020068982A1 (en) 2002-06-06
US7201551B2 (en) 2007-04-10
TW391987B (en) 2000-06-01
EP1143488B1 (de) 2009-03-18
US20020062166A1 (en) 2002-05-23
EP1143488A3 (de) 2003-10-29
US5855726A (en) 1999-01-05
DE69633487T2 (de) 2005-11-17
US6962472B2 (en) 2005-11-08
US6752579B2 (en) 2004-06-22
EP1119022A3 (de) 2003-10-15
US6752580B2 (en) 2004-06-22
US20020062165A1 (en) 2002-05-23
US6253117B1 (en) 2001-06-26
US6188935B1 (en) 2001-02-13
US20020091465A1 (en) 2002-07-11
KR100440683B1 (ko) 2004-10-22
US7347656B2 (en) 2008-03-25
US6430469B2 (en) 2002-08-06
US20010025204A1 (en) 2001-09-27
KR970008334A (ko) 1997-02-24
US20020099469A1 (en) 2002-07-25
EP1143488A2 (de) 2001-10-10
US20040197169A1 (en) 2004-10-07
KR100453276B1 (ko) 2004-10-15
US6895685B2 (en) 2005-05-24
US20020082744A1 (en) 2002-06-27
US20050175435A1 (en) 2005-08-11
SG52824A1 (en) 1998-09-28
US20020061244A1 (en) 2002-05-23
US6526330B2 (en) 2003-02-25
JPH0936198A (ja) 1997-02-07

Similar Documents

Publication Publication Date Title
DE69637878D1 (de) Vakuumbehandlungsanlage und Halbleiterfertigungsstrasse die diese verwendet
DE69522514D1 (de) Halbleiteranordnung und Herstellungsverfahren
DE69526539D1 (de) Halbleiteranordnung und Herstellungsverfahren
DE69527330D1 (de) Halbleiteranordnung und Herstellungsverfahren
DE69525795D1 (de) Halbleiteranordnung und Herstellungsverfahren
DE69534938D1 (de) Photovoltaisches Bauelement und Herstellungsverfahren
DE69430513D1 (de) Harzvergossenes Halbleiterbauteil und dessen Herstellungsverfahren
DE69430511D1 (de) Halbleiteranordnung und Herstellungverfahren
DE69124646D1 (de) MOS-Halbleiterbauelement und dessen Herstellungsverfahren
DE69526543D1 (de) Harzvergossenes Halbleiterbauteil und dessen Herstellungsverfahren
DE69313310D1 (de) Halbleiterdruckwandler und Herstellungsverfahren dazu
FR2771288B1 (fr) Composition de traitement capillaire et son procede de fabrication
DE69521107D1 (de) Ausrichtverfahren und Halbleiterbelichtungsverfahren
DE69731028D1 (de) Halbleitersubstrat und seine Herstellung
DE69535861D1 (de) Wafer und sein Herstellungsverfahren
DE59205106D1 (de) Vakuumbehandlungsanlage und deren Verwendungen
DE69534483D1 (de) Leiterrahmen und Halbleiterbauelement
DE59509632D1 (de) Bipolartransistor und Herstellungsverfahren
DE69408248D1 (de) Bipolares Halbleiterbauelement und Herstellungsverfahren
DE69614739D1 (de) Pflaster zur Behandlung von Pflanzen
EP0669656A3 (de) Source/Drain eines MISFET in einer Halbleiteranordnung und Verfahren zur Herstellung.
DE69500392D1 (de) Halbleiterlasergerät und dessen Herstellungsverfahren
FR2738487B1 (fr) Composition dermatologique antiseptique et son procede de fabrication
DE69501522D1 (de) Sperrschicht-Feldeffekttransistor und dessen Herstellungsverfahren
DE69614077D1 (de) Wärmebehandlungsanlage

Legal Events

Date Code Title Description
8364 No opposition during term of opposition