TW595012B - Semiconductor light-emitting device, light-emitting apparatus and manufacturing method of semiconductor light-emitting device - Google Patents
Semiconductor light-emitting device, light-emitting apparatus and manufacturing method of semiconductor light-emitting device Download PDFInfo
- Publication number
- TW595012B TW595012B TW091120032A TW91120032A TW595012B TW 595012 B TW595012 B TW 595012B TW 091120032 A TW091120032 A TW 091120032A TW 91120032 A TW91120032 A TW 91120032A TW 595012 B TW595012 B TW 595012B
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- Taiwan
- Prior art keywords
- light
- phosphor
- emitting element
- yellow
- semiconductor light
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/02—Use of particular materials as binders, particle coatings or suspension media therefor
- C09K11/025—Use of particular materials as binders, particle coatings or suspension media therefor non-luminescent particle coatings or suspension media
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
- C09K11/7728—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing europium
- C09K11/7729—Chalcogenides
- C09K11/7731—Chalcogenides with alkaline earth metals
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
- C09K11/7728—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing europium
- C09K11/77342—Silicates
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- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
- C09K11/7728—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing europium
- C09K11/7735—Germanates
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
- C09K11/7766—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing two or more rare earth metals
- C09K11/7774—Aluminates
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21S—NON-PORTABLE LIGHTING DEVICES; SYSTEMS THEREOF; VEHICLE LIGHTING DEVICES SPECIALLY ADAPTED FOR VEHICLE EXTERIORS
- F21S6/00—Lighting devices intended to be free-standing
- F21S6/002—Table lamps, e.g. for ambient lighting
- F21S6/003—Table lamps, e.g. for ambient lighting for task lighting, e.g. for reading or desk work, e.g. angle poise lamps
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/14—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material, or by the simultaneous addition of the electroluminescent material in or onto the light source
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- H—ELECTRICITY
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21S—NON-PORTABLE LIGHTING DEVICES; SYSTEMS THEREOF; VEHICLE LIGHTING DEVICES SPECIALLY ADAPTED FOR VEHICLE EXTERIORS
- F21S6/00—Lighting devices intended to be free-standing
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
- F21Y2115/00—Light-generating elements of semiconductor light sources
- F21Y2115/10—Light-emitting diodes [LED]
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- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B20/00—Energy efficient lighting technologies, e.g. halogen lamps or gas discharge lamps
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- General Engineering & Computer Science (AREA)
- Led Device Packages (AREA)
- Luminescent Compositions (AREA)
- Led Devices (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001265540 | 2001-09-03 | ||
| JP2001381369 | 2001-12-14 | ||
| JP2001381370 | 2001-12-14 | ||
| JP2001381368 | 2001-12-14 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW595012B true TW595012B (en) | 2004-06-21 |
Family
ID=27482528
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW091120032A TW595012B (en) | 2001-09-03 | 2002-09-03 | Semiconductor light-emitting device, light-emitting apparatus and manufacturing method of semiconductor light-emitting device |
Country Status (7)
| Country | Link |
|---|---|
| US (6) | US7023019B2 (cg-RX-API-DMAC7.html) |
| EP (2) | EP2017901A1 (cg-RX-API-DMAC7.html) |
| JP (4) | JP3749243B2 (cg-RX-API-DMAC7.html) |
| KR (2) | KR100923804B1 (cg-RX-API-DMAC7.html) |
| CN (2) | CN101335322B (cg-RX-API-DMAC7.html) |
| TW (1) | TW595012B (cg-RX-API-DMAC7.html) |
| WO (1) | WO2003021691A1 (cg-RX-API-DMAC7.html) |
Cited By (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8202747B2 (en) | 2006-06-07 | 2012-06-19 | Osram Opto Semiconductors Gmbh | Method for arranging a powder layer on a substrate and layer structure with at least one powder layer on a substrate |
| TWI383034B (zh) * | 2005-10-25 | 2013-01-21 | Intematix Corp | 二相以矽酸鹽為主的黃色磷光體 |
| US8461756B2 (en) | 2008-05-19 | 2013-06-11 | Kabushiki Kaisha Toshiba | Linear white light source, and backlight and liquid crystal display device using the same |
| TWI411659B (zh) * | 2004-09-21 | 2013-10-11 | Cree Inc | 從懸浮液中蒸發溶劑而塗層半導體發光元件之方法 |
| TWI415286B (zh) * | 2004-08-03 | 2013-11-11 | Philips Lumileds Lighting Co | 半導體發光裝置之封裝 |
| US8778601B2 (en) | 2010-03-05 | 2014-07-15 | Rohm and Haas Electronic Materials | Methods of forming photolithographic patterns |
| US8878219B2 (en) | 2008-01-11 | 2014-11-04 | Cree, Inc. | Flip-chip phosphor coating method and devices fabricated utilizing method |
| US8962361B2 (en) | 2010-12-03 | 2015-02-24 | Osram Opto Semiconductors Gmbh | Method for producing a semiconductor chip emitting radiation, semiconductor chip emitting radiation, and component emitting radiation |
| TWI475714B (zh) * | 2006-11-07 | 2015-03-01 | 克里公司 | 照明裝置及照明方法 |
| US9024349B2 (en) | 2007-01-22 | 2015-05-05 | Cree, Inc. | Wafer level phosphor coating method and devices fabricated utilizing method |
| US9041285B2 (en) | 2007-12-14 | 2015-05-26 | Cree, Inc. | Phosphor distribution in LED lamps using centrifugal force |
| US9084328B2 (en) | 2006-12-01 | 2015-07-14 | Cree, Inc. | Lighting device and lighting method |
| US9093616B2 (en) | 2003-09-18 | 2015-07-28 | Cree, Inc. | Molded chip fabrication method and apparatus |
| US9159888B2 (en) | 2007-01-22 | 2015-10-13 | Cree, Inc. | Wafer level phosphor coating method and devices fabricated utilizing method |
| US9166126B2 (en) | 2011-01-31 | 2015-10-20 | Cree, Inc. | Conformally coated light emitting devices and methods for providing the same |
| US9417478B2 (en) | 2006-04-18 | 2016-08-16 | Cree, Inc. | Lighting device and lighting method |
| US9441793B2 (en) | 2006-12-01 | 2016-09-13 | Cree, Inc. | High efficiency lighting device including one or more solid state light emitters, and method of lighting |
| TWI667814B (zh) * | 2013-11-13 | 2019-08-01 | 日本特殊陶業股份有限公司 | 發光元件、發光裝置及其製造方法 |
| US10546846B2 (en) | 2010-07-23 | 2020-01-28 | Cree, Inc. | Light transmission control for masking appearance of solid state light sources |
Families Citing this family (460)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3749243B2 (ja) * | 2001-09-03 | 2006-02-22 | 松下電器産業株式会社 | 半導体発光デバイス,発光装置及び半導体発光デバイスの製造方法 |
| EP1447853B1 (en) * | 2001-10-01 | 2012-08-08 | Panasonic Corporation | Semiconductor light emitting element and light emitting device using this |
| DE10258193B4 (de) * | 2002-12-12 | 2014-04-10 | Osram Opto Semiconductors Gmbh | Verfahren zum Herstellen von Leuchtdioden-Lichtquellen mit Lumineszenz-Konversionselement |
| JP3717480B2 (ja) * | 2003-01-27 | 2005-11-16 | ローム株式会社 | 半導体発光装置 |
| DE10319091A1 (de) * | 2003-04-28 | 2004-09-09 | Siemens Ag | Leuchtstoff zum Umwandeln einer Primärstrahlung in eine Sekundärstrahlung |
| US7005679B2 (en) | 2003-05-01 | 2006-02-28 | Cree, Inc. | Multiple component solid state white light |
| US6982045B2 (en) * | 2003-05-17 | 2006-01-03 | Phosphortech Corporation | Light emitting device having silicate fluorescent phosphor |
| JP4806889B2 (ja) * | 2003-09-05 | 2011-11-02 | 日亜化学工業株式会社 | 光源装置及び照明装置 |
| JP2007506264A (ja) * | 2003-09-15 | 2007-03-15 | コニンクリユケ フィリップス エレクトロニクス エヌ.ブイ. | 白色発光照明システム |
| US7094362B2 (en) * | 2003-10-29 | 2006-08-22 | General Electric Company | Garnet phosphor materials having enhanced spectral characteristics |
| EP1685583A1 (en) * | 2003-11-11 | 2006-08-02 | Koninklijke Philips Electronics N.V. | Low-pressure vapor discharge lamp with a mercury-free gas filling |
| TWI291770B (en) | 2003-11-14 | 2007-12-21 | Hon Hai Prec Ind Co Ltd | Surface light source device and light emitting diode |
| KR100537560B1 (ko) * | 2003-11-25 | 2005-12-19 | 주식회사 메디아나전자 | 2단계 큐어 공정을 포함하는 백색 발광 다이오드 소자의제조방법 |
| JP2009141374A (ja) * | 2003-12-05 | 2009-06-25 | Toshiba Corp | 発光装置 |
| US20050122034A1 (en) * | 2003-12-08 | 2005-06-09 | Fuji Photo Film Co., Ltd. | Electroluminescent device |
| KR100540848B1 (ko) * | 2004-01-02 | 2006-01-11 | 주식회사 메디아나전자 | 이중 몰드로 구성된 백색 발광다이오드 소자 및 그 제조방법 |
| JP2005197369A (ja) * | 2004-01-05 | 2005-07-21 | Toshiba Corp | 光半導体装置 |
| US7183588B2 (en) * | 2004-01-08 | 2007-02-27 | Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. | Light emission device |
| WO2005071039A1 (ja) * | 2004-01-26 | 2005-08-04 | Kyocera Corporation | 波長変換器、発光装置、波長変換器の製造方法および発光装置の製造方法 |
| DE202005002110U1 (de) * | 2004-02-19 | 2005-05-04 | Hong-Yuan Technology Co., Ltd., Yonghe | Lichtemittierende Vorrichtung |
| US7573072B2 (en) * | 2004-03-10 | 2009-08-11 | Lumination Llc | Phosphor and blends thereof for use in LEDs |
| JP4451178B2 (ja) * | 2004-03-25 | 2010-04-14 | スタンレー電気株式会社 | 発光デバイス |
| KR100605211B1 (ko) | 2004-04-07 | 2006-07-31 | 엘지이노텍 주식회사 | 형광체 및 이를 이용한 백색 발광다이오드 |
| KR100605212B1 (ko) * | 2004-04-07 | 2006-07-31 | 엘지이노텍 주식회사 | 형광체 및 이를 이용한 백색 발광다이오드 |
| KR100847957B1 (ko) * | 2004-04-27 | 2008-07-22 | 마쯔시다덴기산교 가부시키가이샤 | 형광체 조성물과 그 제조 방법, 및 그 형광체 조성물을이용한 발광 장치 |
| JP4128564B2 (ja) * | 2004-04-27 | 2008-07-30 | 松下電器産業株式会社 | 発光装置 |
| CN100440555C (zh) * | 2004-04-28 | 2008-12-03 | 松下电器产业株式会社 | 发光装置及其制造方法 |
| KR100655894B1 (ko) * | 2004-05-06 | 2006-12-08 | 서울옵토디바이스주식회사 | 색온도 및 연색성이 우수한 파장변환 발광장치 |
| US7315119B2 (en) * | 2004-05-07 | 2008-01-01 | Avago Technologies Ip (Singapore) Pte Ltd | Light-emitting device having a phosphor particle layer with specific thickness |
| KR100658700B1 (ko) | 2004-05-13 | 2006-12-15 | 서울옵토디바이스주식회사 | Rgb 발광소자와 형광체를 조합한 발광장치 |
| US7349043B2 (en) | 2004-05-24 | 2008-03-25 | Nec Corporation | Light source, display device, portable terminal device, and ray direction switching element |
| US8318044B2 (en) * | 2004-06-10 | 2012-11-27 | Seoul Semiconductor Co., Ltd. | Light emitting device |
| KR100665299B1 (ko) * | 2004-06-10 | 2007-01-04 | 서울반도체 주식회사 | 발광물질 |
| KR100665298B1 (ko) * | 2004-06-10 | 2007-01-04 | 서울반도체 주식회사 | 발광장치 |
| KR100623024B1 (ko) * | 2004-06-10 | 2006-09-19 | 엘지전자 주식회사 | 고출력 led 패키지 |
| JP4583076B2 (ja) * | 2004-06-11 | 2010-11-17 | スタンレー電気株式会社 | 発光素子 |
| CN100483757C (zh) * | 2004-06-18 | 2009-04-29 | 皇家飞利浦电子股份有限公司 | Led和具有led的系统及led的制备方法 |
| KR100616594B1 (ko) * | 2004-07-02 | 2006-08-28 | 삼성전기주식회사 | 색 혼합성이 향상된 rgb 발광 다이오드 패키지 |
| US7427366B2 (en) * | 2004-07-06 | 2008-09-23 | Sarnoff Corporation | Efficient, green-emitting phosphors, and combinations with red-emitting phosphors |
| US7601276B2 (en) * | 2004-08-04 | 2009-10-13 | Intematix Corporation | Two-phase silicate-based yellow phosphor |
| US7311858B2 (en) * | 2004-08-04 | 2007-12-25 | Intematix Corporation | Silicate-based yellow-green phosphors |
| US8017035B2 (en) * | 2004-08-04 | 2011-09-13 | Intematix Corporation | Silicate-based yellow-green phosphors |
| US20060027785A1 (en) * | 2004-08-04 | 2006-02-09 | Intematix Corporation | Novel silicate-based yellow-green phosphors |
| US7575697B2 (en) * | 2004-08-04 | 2009-08-18 | Intematix Corporation | Silicate-based green phosphors |
| JP2006083219A (ja) * | 2004-09-14 | 2006-03-30 | Sharp Corp | 蛍光体およびこれを用いた発光装置 |
| JP5086641B2 (ja) * | 2004-09-22 | 2012-11-28 | 株式会社東芝 | 発光装置とそれを用いたバックライトおよび液晶表示装置 |
| JP4756841B2 (ja) * | 2004-09-29 | 2011-08-24 | スタンレー電気株式会社 | 半導体発光装置の製造方法 |
| JP4618721B2 (ja) * | 2004-09-30 | 2011-01-26 | 日東電工株式会社 | 光学素子及びこれを用いた偏光面光源並びにこれを用いた表示装置 |
| WO2006041178A2 (en) * | 2004-10-13 | 2006-04-20 | Matsushita Electric Industrial Co., Ltd. | Luminescent light source, method for manufacturing the same, and light-emitting apparatus |
| JP2006114637A (ja) * | 2004-10-13 | 2006-04-27 | Toshiba Corp | 半導体発光装置 |
| KR20060034055A (ko) | 2004-10-18 | 2006-04-21 | 엘지이노텍 주식회사 | 형광체 및 이를 이용한 발광소자 |
| JP4524607B2 (ja) * | 2004-10-26 | 2010-08-18 | 豊田合成株式会社 | 改善されたシリケート系蛍光体及びそれを用いたledランプ |
| TW200619765A (en) * | 2004-12-10 | 2006-06-16 | Innolux Display Corp | Backlight system |
| JP2006179572A (ja) * | 2004-12-21 | 2006-07-06 | Sharp Corp | 発光ダイオード、バックライト装置および発光ダイオードの製造方法 |
| JP2006188700A (ja) * | 2005-01-03 | 2006-07-20 | Samsung Electro Mech Co Ltd | 硫化物系蛍光体の被膜形成方法及び表面コーティング硫化物系蛍光体 |
| US8125137B2 (en) | 2005-01-10 | 2012-02-28 | Cree, Inc. | Multi-chip light emitting device lamps for providing high-CRI warm white light and light fixtures including the same |
| US9793247B2 (en) * | 2005-01-10 | 2017-10-17 | Cree, Inc. | Solid state lighting component |
| US7821023B2 (en) | 2005-01-10 | 2010-10-26 | Cree, Inc. | Solid state lighting component |
| US7564180B2 (en) * | 2005-01-10 | 2009-07-21 | Cree, Inc. | Light emission device and method utilizing multiple emitters and multiple phosphors |
| US9070850B2 (en) | 2007-10-31 | 2015-06-30 | Cree, Inc. | Light emitting diode package and method for fabricating same |
| US7413918B2 (en) * | 2005-01-11 | 2008-08-19 | Semileds Corporation | Method of making a light emitting diode |
| TWI303111B (en) * | 2005-01-19 | 2008-11-11 | Advanced Optoelectronic Tech | Light emitting diode device and manufacturing method thereof |
| DE102005005263A1 (de) * | 2005-02-04 | 2006-08-10 | Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH | Gelb emittierender Leuchtstoff und Lichtquelle mit derartigem Leuchtstoff |
| TWI521748B (zh) | 2005-02-18 | 2016-02-11 | 日亞化學工業股份有限公司 | 具備控制配光特性用之透鏡之發光裝置 |
| WO2006090804A1 (ja) * | 2005-02-23 | 2006-08-31 | Mitsubishi Chemical Corporation | 半導体発光デバイス用部材及びその製造方法、並びにそれを用いた半導体発光デバイス |
| JP2006245020A (ja) * | 2005-02-28 | 2006-09-14 | Sharp Corp | 発光ダイオード素子とその製造方法 |
| US7276183B2 (en) * | 2005-03-25 | 2007-10-02 | Sarnoff Corporation | Metal silicate-silica-based polymorphous phosphors and lighting devices |
| KR101142519B1 (ko) | 2005-03-31 | 2012-05-08 | 서울반도체 주식회사 | 적색 형광체 및 녹색 형광체를 갖는 백색 발광다이오드를채택한 백라이트 패널 |
| US20060221022A1 (en) * | 2005-04-01 | 2006-10-05 | Roger Hajjar | Laser vector scanner systems with display screens having optical fluorescent materials |
| JP2006299097A (ja) * | 2005-04-21 | 2006-11-02 | Matsushita Electric Works Ltd | 発光装置 |
| CN100454591C (zh) * | 2005-05-10 | 2009-01-21 | 光宝科技股份有限公司 | 包含荧光粉的发光二极管元件 |
| JP2006332163A (ja) * | 2005-05-24 | 2006-12-07 | Rohm Co Ltd | 白色系発光装置 |
| TWI323947B (en) * | 2005-05-24 | 2010-04-21 | Seoul Semiconductor Co Ltd | Light emitting device and phosphor of alkaline earth sulfide therefor |
| TW200704283A (en) * | 2005-05-27 | 2007-01-16 | Lamina Ceramics Inc | Solid state LED bridge rectifier light engine |
| TWI311820B (en) * | 2005-06-07 | 2009-07-01 | Fujikura Ltd | Substrate for mounting light-emitting element, light-emitting element module, iluumination apparatus, display apparatus, and traffic signal device |
| KR100601200B1 (ko) * | 2005-06-17 | 2006-07-13 | 서울반도체 주식회사 | 적색 형광체와 이를 이용한 발광 다이오드 |
| JP4557824B2 (ja) * | 2005-07-04 | 2010-10-06 | 株式会社東芝 | 発光装置およびその製造方法 |
| TW200717866A (en) * | 2005-07-29 | 2007-05-01 | Toshiba Kk | Semiconductor light emitting device |
| US7927512B2 (en) | 2005-08-04 | 2011-04-19 | Nichia Corporation | Phosphor and light emitting device |
| JP5245222B2 (ja) * | 2005-08-10 | 2013-07-24 | 三菱化学株式会社 | 蛍光体及びそれを用いた発光装置 |
| KR100691273B1 (ko) * | 2005-08-23 | 2007-03-12 | 삼성전기주식회사 | 복합 형광체 분말, 이를 이용한 발광 장치 및 복합 형광체분말의 제조 방법 |
| US20070045643A1 (en) * | 2005-08-29 | 2007-03-01 | Shih-Lung Liu | Substrate-based white light diode |
| US7501753B2 (en) * | 2005-08-31 | 2009-03-10 | Lumination Llc | Phosphor and blends thereof for use in LEDs |
| KR100666211B1 (ko) * | 2005-09-22 | 2007-01-09 | 한국화학연구원 | 자외선 및 장파장 여기용 규산염계 형광체 |
| JP2007095807A (ja) * | 2005-09-27 | 2007-04-12 | Sanyo Electric Co Ltd | 発光装置及びその製造方法 |
| KR100724591B1 (ko) * | 2005-09-30 | 2007-06-04 | 서울반도체 주식회사 | 발광 소자 및 이를 포함한 led 백라이트 |
| US7537356B2 (en) * | 2005-11-11 | 2009-05-26 | Chunghwa Picture Tubes, Ltd. | Method for improving color purity of light source module and fluorescent lamp and LED device applying the method |
| US20120211773A1 (en) * | 2005-11-22 | 2012-08-23 | Robert Fleming | Light-emitting devices comprising non-linear electrically protective material |
| US20070125984A1 (en) * | 2005-12-01 | 2007-06-07 | Sarnoff Corporation | Phosphors protected against moisture and LED lighting devices |
| US8906262B2 (en) * | 2005-12-02 | 2014-12-09 | Lightscape Materials, Inc. | Metal silicate halide phosphors and LED lighting devices using the same |
| KR101055772B1 (ko) | 2005-12-15 | 2011-08-11 | 서울반도체 주식회사 | 발광장치 |
| KR101332139B1 (ko) * | 2005-12-21 | 2013-11-21 | 크리, 인코포레이티드 | 조명 장치 및 조명 방법 |
| CN103925521A (zh) | 2005-12-21 | 2014-07-16 | 科锐公司 | 照明装置 |
| JP2009527071A (ja) | 2005-12-22 | 2009-07-23 | クリー エル イー ディー ライティング ソリューションズ インコーポレイテッド | 照明装置 |
| KR100735320B1 (ko) * | 2005-12-27 | 2007-07-04 | 삼성전기주식회사 | 형광체막 형성방법 및 이를 이용한 발광다이오드 패키지제조방법 |
| JP4828226B2 (ja) * | 2005-12-28 | 2011-11-30 | 新光電気工業株式会社 | 発光装置及びその製造方法 |
| US7918582B2 (en) * | 2005-12-30 | 2011-04-05 | Dialight Corporation | Signal light using phosphor coated LEDs |
| US7777322B2 (en) * | 2005-12-30 | 2010-08-17 | Dialight Corporation | Apparatus for providing a light source that combines different color LEDS |
| KR100658970B1 (ko) | 2006-01-09 | 2006-12-19 | 주식회사 메디아나전자 | 복합 파장의 광을 발생시키는 발광 다이오드 소자 |
| US7569406B2 (en) * | 2006-01-09 | 2009-08-04 | Cree, Inc. | Method for coating semiconductor device using droplet deposition |
| US8044412B2 (en) | 2006-01-20 | 2011-10-25 | Taiwan Semiconductor Manufacturing Company, Ltd | Package for a light emitting element |
| JP2007231250A (ja) * | 2006-02-02 | 2007-09-13 | Nichia Chem Ind Ltd | 蛍光体及びそれを用いた発光装置 |
| TWI317756B (en) * | 2006-02-07 | 2009-12-01 | Coretronic Corp | Phosphor, fluorescent gel, and light emitting diode device |
| TWI435927B (zh) * | 2006-02-10 | 2014-05-01 | 三菱化學股份有限公司 | 螢光體及其製造方法,含螢光體之組成物,發光裝置,暨影像顯示裝置及照明裝置 |
| KR100735453B1 (ko) * | 2006-02-22 | 2007-07-04 | 삼성전기주식회사 | 백색 발광 장치 |
| JP5027427B2 (ja) * | 2006-02-23 | 2012-09-19 | パナソニック株式会社 | 発光ダイオードを用いた白色照明装置 |
| WO2007105845A1 (en) * | 2006-03-16 | 2007-09-20 | Seoul Semiconductor Co., Ltd. | Fluorescent material and light emitting diode using the same |
| KR100797968B1 (ko) * | 2006-03-31 | 2008-01-24 | 서울반도체 주식회사 | 발광 다이오드 및 이의 제조 방법 |
| KR100875443B1 (ko) | 2006-03-31 | 2008-12-23 | 서울반도체 주식회사 | 발광 장치 |
| JP4473284B2 (ja) * | 2006-03-31 | 2010-06-02 | Dowaエレクトロニクス株式会社 | 発光装置およびその製造方法 |
| US8969908B2 (en) | 2006-04-04 | 2015-03-03 | Cree, Inc. | Uniform emission LED package |
| JP2007300069A (ja) | 2006-04-04 | 2007-11-15 | Toyoda Gosei Co Ltd | 発光素子、この発光素子を用いた発光装置及びこの発光素子の製造方法 |
| JP5053363B2 (ja) | 2006-04-18 | 2012-10-17 | クリー インコーポレイテッド | 照明装置、および、照明方法 |
| US7821194B2 (en) | 2006-04-18 | 2010-10-26 | Cree, Inc. | Solid state lighting devices including light mixtures |
| US9335006B2 (en) * | 2006-04-18 | 2016-05-10 | Cree, Inc. | Saturated yellow phosphor converted LED and blue converted red LED |
| US8998444B2 (en) | 2006-04-18 | 2015-04-07 | Cree, Inc. | Solid state lighting devices including light mixtures |
| WO2007124036A2 (en) * | 2006-04-20 | 2007-11-01 | Cree Led Lighting Solutions, Inc. | Lighting device and lighting method |
| EP2016629B1 (en) * | 2006-05-02 | 2015-03-25 | Koninklijke Philips N.V. | Vehicle headlight |
| KR100731678B1 (ko) * | 2006-05-08 | 2007-06-22 | 서울반도체 주식회사 | 칩형 발광 다이오드 패키지 및 그것을 갖는 발광 장치 |
| CA2647845A1 (en) * | 2006-05-30 | 2007-12-13 | University Of Georgia Research Foundation | White phosphors, methods of making white phosphors, white light emitting leds, methods of making white light emitting leds, and light bulb structures |
| US8596819B2 (en) | 2006-05-31 | 2013-12-03 | Cree, Inc. | Lighting device and method of lighting |
| US7989823B2 (en) | 2006-06-08 | 2011-08-02 | Hong-Yuan Technology Co., Ltd. | Light emitting system, light emitting apparatus and forming method thereof |
| JP2007335799A (ja) * | 2006-06-19 | 2007-12-27 | Toyoda Gosei Co Ltd | 発光装置 |
| RU2431219C2 (ru) * | 2006-06-21 | 2011-10-10 | Конинклейке Филипс Электроникс Н.В. | Светоизлучающее устройство с по меньшей мере одним керамическим сферическим, преобразующим цвет материалом |
| US20080012035A1 (en) * | 2006-07-11 | 2008-01-17 | Bily Wang | LED chip package structure and method for manufacturing the same |
| JP5134788B2 (ja) * | 2006-07-19 | 2013-01-30 | 株式会社東芝 | 蛍光体の製造方法 |
| US7943952B2 (en) | 2006-07-31 | 2011-05-17 | Cree, Inc. | Method of uniform phosphor chip coating and LED package fabricated using method |
| US20080029720A1 (en) * | 2006-08-03 | 2008-02-07 | Intematix Corporation | LED lighting arrangement including light emitting phosphor |
| JP5205724B2 (ja) * | 2006-08-04 | 2013-06-05 | 日亜化学工業株式会社 | 発光装置 |
| US7820075B2 (en) * | 2006-08-10 | 2010-10-26 | Intematix Corporation | Phosphor composition with self-adjusting chromaticity |
| US8310143B2 (en) * | 2006-08-23 | 2012-11-13 | Cree, Inc. | Lighting device and lighting method |
| KR101258227B1 (ko) | 2006-08-29 | 2013-04-25 | 서울반도체 주식회사 | 발광 소자 |
| JP4905009B2 (ja) * | 2006-09-12 | 2012-03-28 | 豊田合成株式会社 | 発光装置の製造方法 |
| EP2084242A4 (en) | 2006-10-03 | 2009-12-16 | Sarnoff Corp | METAL SILICATE HALIDE PHOSPHERE AND LED LIGHTING DEVICES THEREWITH |
| JP4837045B2 (ja) * | 2006-10-12 | 2011-12-14 | パナソニック株式会社 | 発光装置及びその製造方法 |
| JP5194675B2 (ja) * | 2006-10-31 | 2013-05-08 | 東芝ライテック株式会社 | 発光装置 |
| US8029155B2 (en) | 2006-11-07 | 2011-10-04 | Cree, Inc. | Lighting device and lighting method |
| US10295147B2 (en) | 2006-11-09 | 2019-05-21 | Cree, Inc. | LED array and method for fabricating same |
| JP4520972B2 (ja) * | 2006-11-28 | 2010-08-11 | Dowaエレクトロニクス株式会社 | 発光装置及びその製造方法 |
| KR20080049947A (ko) * | 2006-12-01 | 2008-06-05 | 엘지전자 주식회사 | 방송 시스템, 인터페이스 방법, 및 데이터 구조 |
| CN101611259B (zh) | 2006-12-07 | 2012-06-27 | 科锐公司 | 照明装置和照明方法 |
| US8013506B2 (en) * | 2006-12-12 | 2011-09-06 | Prysm, Inc. | Organic compounds for adjusting phosphor chromaticity |
| KR20080065451A (ko) * | 2007-01-09 | 2008-07-14 | 삼성전기주식회사 | Led 패키지 |
| JP5296690B2 (ja) * | 2007-01-11 | 2013-09-25 | パナソニック株式会社 | 光源 |
| US8232564B2 (en) * | 2007-01-22 | 2012-07-31 | Cree, Inc. | Wafer level phosphor coating technique for warm light emitting diodes |
| TWI336962B (en) * | 2007-02-08 | 2011-02-01 | Touch Micro System Tech | White light emitting diode package structure having silicon substrate and method of making the same |
| JP5121736B2 (ja) * | 2007-02-09 | 2013-01-16 | 株式会社東芝 | 白色発光ランプとそれを用いた照明装置 |
| KR100900620B1 (ko) * | 2007-02-20 | 2009-06-02 | 삼성전기주식회사 | 백색 발광 장치 |
| WO2008103876A1 (en) | 2007-02-22 | 2008-08-28 | Cree Led Lighting Solutions, Inc. | Lighting devices, methods of lighting, light filters and methods of filtering light |
| WO2008116351A1 (en) * | 2007-03-26 | 2008-10-02 | He Shan Lide Electronic Enterprise Company Ltd. | Method for synthesizing lower color temperature light and lighting device |
| EP2135001A1 (de) * | 2007-04-16 | 2009-12-23 | Goodrich Lighting Systems GmbH | Farbverstellbare led-leuchte, insbesondere zur fahrzeuginnenbeleuchtung |
| CN101688644B (zh) | 2007-05-08 | 2011-06-15 | 科锐Led照明科技公司 | 照明装置及照明方法 |
| EP2153112B1 (en) | 2007-05-08 | 2016-05-04 | Cree, Inc. | Lighting device and lighting method |
| JP2010527510A (ja) * | 2007-05-08 | 2010-08-12 | クリー エル イー ディー ライティング ソリューションズ インコーポレイテッド | 照明デバイスおよび照明方法 |
| KR20100020464A (ko) | 2007-05-08 | 2010-02-22 | 크리 엘이디 라이팅 솔루션즈, 인크. | 조명 장치 및 조명 방법 |
| WO2008137975A1 (en) | 2007-05-08 | 2008-11-13 | Cree Led Lighting Solutions, Inc. | Lighting device and lighting method |
| KR100818162B1 (ko) * | 2007-05-14 | 2008-03-31 | 루미마이크로 주식회사 | 색온도 조절이 가능한 백색 led 장치 |
| CN101679859A (zh) * | 2007-06-05 | 2010-03-24 | 皇家飞利浦电子股份有限公司 | 自支撑发光膜和磷光体增强照明系统 |
| US8288936B2 (en) | 2007-06-05 | 2012-10-16 | Sharp Kabushiki Kaisha | Light emitting apparatus, method for manufacturing the light emitting apparatus, electronic device and cell phone device |
| JP4519888B2 (ja) * | 2007-06-29 | 2010-08-04 | 株式会社東芝 | 半導体受光素子及び光半導体モジュール |
| US10505083B2 (en) | 2007-07-11 | 2019-12-10 | Cree, Inc. | Coating method utilizing phosphor containment structure and devices fabricated using same |
| JP2009019105A (ja) * | 2007-07-11 | 2009-01-29 | Nitto Denko Corp | ポリイミドからなる光半導体素子封止用樹脂 |
| US20090029490A1 (en) * | 2007-07-26 | 2009-01-29 | Baiocchi Frank A | Method of fabricating an electronic device |
| KR100844919B1 (ko) * | 2007-07-27 | 2008-07-09 | 세메스 주식회사 | 경화제 도포 장치 |
| US20090039375A1 (en) * | 2007-08-07 | 2009-02-12 | Cree, Inc. | Semiconductor light emitting devices with separated wavelength conversion materials and methods of forming the same |
| US7863635B2 (en) | 2007-08-07 | 2011-01-04 | Cree, Inc. | Semiconductor light emitting devices with applied wavelength conversion materials |
| CN101784636B (zh) | 2007-08-22 | 2013-06-12 | 首尔半导体株式会社 | 非化学计量四方铜碱土硅酸盐磷光体及其制备方法 |
| KR101055769B1 (ko) | 2007-08-28 | 2011-08-11 | 서울반도체 주식회사 | 비화학양론적 정방정계 알칼리 토류 실리케이트 형광체를채택한 발광 장치 |
| KR101393948B1 (ko) * | 2007-09-10 | 2014-05-12 | 엘지이노텍 주식회사 | 발광 다이오드 패키지 및 그 제조방법 |
| WO2009028861A2 (en) * | 2007-08-31 | 2009-03-05 | Lg Innotek Co., Ltd | Light emitting device package |
| JP5075552B2 (ja) * | 2007-09-25 | 2012-11-21 | 株式会社東芝 | 蛍光体およびそれを用いたledランプ |
| DE102007046520A1 (de) * | 2007-09-28 | 2009-04-02 | Osram Opto Semiconductors Gmbh | Lichtemittierendes Flächenelement und Verfahren zum Herstellen eines lichtemittierenden Flächenelementes |
| JP2011501417A (ja) | 2007-10-10 | 2011-01-06 | クリー エル イー ディー ライティング ソリューションズ インコーポレイテッド | 照明デバイスおよび製作方法 |
| TW200921934A (en) * | 2007-11-06 | 2009-05-16 | Prodisc Technology Inc | Discrete light-emitting diode light source device of wavelength conversion unit |
| JP2009114415A (ja) * | 2007-11-09 | 2009-05-28 | Nitto Denko Corp | ポリイミドを含む光半導体素子封止用樹脂およびそれを用いて得られる光半導体装置 |
| WO2009066430A1 (ja) * | 2007-11-19 | 2009-05-28 | Panasonic Corporation | 半導体発光装置および半導体発光装置の製造方法 |
| KR101517644B1 (ko) * | 2007-11-29 | 2015-05-04 | 니치아 카가쿠 고교 가부시키가이샤 | 발광장치 및 그 제조방법 |
| KR100998233B1 (ko) | 2007-12-03 | 2010-12-07 | 서울반도체 주식회사 | 슬림형 led 패키지 |
| KR101265833B1 (ko) | 2007-12-07 | 2013-05-20 | 도시바 마테리알 가부시키가이샤 | 형광체 및 그것을 이용한 led 발광 장치 |
| TW200925247A (en) * | 2007-12-12 | 2009-06-16 | Wang yong qi | Three spectral band phosphor powder for using in multilayered agricultural film |
| US8167674B2 (en) * | 2007-12-14 | 2012-05-01 | Cree, Inc. | Phosphor distribution in LED lamps using centrifugal force |
| DE102008015941A1 (de) * | 2007-12-21 | 2009-06-25 | Osram Opto Semiconductors Gmbh | Beleuchtungseinrichtung |
| US7989236B2 (en) * | 2007-12-27 | 2011-08-02 | Toyoda Gosei Co., Ltd. | Method of making phosphor containing glass plate, method of making light emitting device |
| WO2009093427A1 (ja) * | 2008-01-21 | 2009-07-30 | Nichia Corporation | 発光装置 |
| US7790230B2 (en) * | 2008-01-30 | 2010-09-07 | The United States Of America As Represented By The Secretary Of The Navy | Metal chloride seeded growth of electronic and optical materials |
| CN101230271B (zh) * | 2008-01-31 | 2010-06-02 | 中国计量学院 | 一种用于led的红光荧光粉及其制备方法 |
| DE102008006990A1 (de) * | 2008-01-31 | 2009-08-06 | Osram Opto Semiconductors Gmbh | Hintergrundbeleuchtungseinheit für eine Hintergrundbeleuchtung eines Bildschirms und Bildschirmeinheit des Bildschirms |
| US8178888B2 (en) * | 2008-02-01 | 2012-05-15 | Cree, Inc. | Semiconductor light emitting devices with high color rendering |
| CN101510579B (zh) * | 2008-02-13 | 2011-04-06 | 财团法人工业技术研究院 | 发光元件及其制作方法 |
| US8637883B2 (en) * | 2008-03-19 | 2014-01-28 | Cree, Inc. | Low index spacer layer in LED devices |
| EP2257999B1 (en) * | 2008-03-25 | 2014-10-01 | Kabushiki Kaisha Toshiba | Light emitting device, and method and apparatus for manufacturing same |
| US8350461B2 (en) | 2008-03-28 | 2013-01-08 | Cree, Inc. | Apparatus and methods for combining light emitters |
| CN102017206A (zh) * | 2008-04-17 | 2011-04-13 | 株式会社东芝 | 白光发射设备、背光灯、液晶显示设备、以及照明设备 |
| JP4960300B2 (ja) * | 2008-05-16 | 2012-06-27 | 東芝ライテック株式会社 | 面発光源装置 |
| US8242525B2 (en) * | 2008-05-20 | 2012-08-14 | Lightscape Materials, Inc. | Silicate-based phosphors and LED lighting devices using the same |
| US8461613B2 (en) * | 2008-05-27 | 2013-06-11 | Interlight Optotech Corporation | Light emitting device |
| US8871024B2 (en) | 2008-06-05 | 2014-10-28 | Soraa, Inc. | High pressure apparatus and method for nitride crystal growth |
| US9157167B1 (en) | 2008-06-05 | 2015-10-13 | Soraa, Inc. | High pressure apparatus and method for nitride crystal growth |
| US8097081B2 (en) * | 2008-06-05 | 2012-01-17 | Soraa, Inc. | High pressure apparatus and method for nitride crystal growth |
| US20090309127A1 (en) * | 2008-06-13 | 2009-12-17 | Soraa, Inc. | Selective area epitaxy growth method and structure |
| US8847249B2 (en) | 2008-06-16 | 2014-09-30 | Soraa, Inc. | Solid-state optical device having enhanced indium content in active regions |
| US8303710B2 (en) * | 2008-06-18 | 2012-11-06 | Soraa, Inc. | High pressure apparatus and method for nitride crystal growth |
| US20090320745A1 (en) * | 2008-06-25 | 2009-12-31 | Soraa, Inc. | Heater device and method for high pressure processing of crystalline materials |
| US8240875B2 (en) | 2008-06-25 | 2012-08-14 | Cree, Inc. | Solid state linear array modules for general illumination |
| JP5305758B2 (ja) * | 2008-06-30 | 2013-10-02 | 株式会社東芝 | 半導体発光装置 |
| EP2312658B1 (en) | 2008-07-03 | 2018-06-27 | Samsung Electronics Co., Ltd. | A wavelength-converting light emitting diode (led) chip and method for fabrication of an led device equipped with this chip |
| WO2011044554A1 (en) | 2009-10-09 | 2011-04-14 | Soraa, Inc. | Method for synthesis of high quality large area bulk gallium based crystals |
| WO2010005914A1 (en) * | 2008-07-07 | 2010-01-14 | Soraa, Inc. | High quality large area bulk non-polar or semipolar gallium based substrates and methods |
| US8805134B1 (en) | 2012-02-17 | 2014-08-12 | Soraa Laser Diode, Inc. | Methods and apparatus for photonic integration in non-polar and semi-polar oriented wave-guided optical devices |
| US8259769B1 (en) | 2008-07-14 | 2012-09-04 | Soraa, Inc. | Integrated total internal reflectors for high-gain laser diodes with high quality cleaved facets on nonpolar/semipolar GaN substrates |
| JP5239043B2 (ja) * | 2008-07-18 | 2013-07-17 | シャープ株式会社 | 発光装置および発光装置の製造方法 |
| US8698193B2 (en) * | 2008-07-29 | 2014-04-15 | Sharp Kabushiki Kaisha | Light emitting device and method for manufacturing the same |
| WO2010017148A1 (en) | 2008-08-04 | 2010-02-11 | Soraa, Inc. | White light devices using non-polar or semipolar gallium containing materials and phosphors |
| US8284810B1 (en) | 2008-08-04 | 2012-10-09 | Soraa, Inc. | Solid state laser device using a selected crystal orientation in non-polar or semi-polar GaN containing materials and methods |
| US8979999B2 (en) * | 2008-08-07 | 2015-03-17 | Soraa, Inc. | Process for large-scale ammonothermal manufacturing of gallium nitride boules |
| US10036099B2 (en) | 2008-08-07 | 2018-07-31 | Slt Technologies, Inc. | Process for large-scale ammonothermal manufacturing of gallium nitride boules |
| US8383432B2 (en) * | 2008-08-07 | 2013-02-26 | Sharp Laboratories Of America, Inc. | Colloidal-processed silicon particle device |
| US8021481B2 (en) * | 2008-08-07 | 2011-09-20 | Soraa, Inc. | Process and apparatus for large-scale manufacturing of bulk monocrystalline gallium-containing nitride |
| US8430958B2 (en) * | 2008-08-07 | 2013-04-30 | Soraa, Inc. | Apparatus and method for seed crystal utilization in large-scale manufacturing of gallium nitride |
| US8323405B2 (en) * | 2008-08-07 | 2012-12-04 | Soraa, Inc. | Process and apparatus for growing a crystalline gallium-containing nitride using an azide mineralizer |
| US8148801B2 (en) | 2008-08-25 | 2012-04-03 | Soraa, Inc. | Nitride crystal with removable surface layer and methods of manufacture |
| FR2935543A1 (fr) * | 2008-09-03 | 2010-03-05 | Glory Science Co Ltd | Unite photoemissive et procede de fabrication d'une telle unite |
| US8354679B1 (en) | 2008-10-02 | 2013-01-15 | Soraa, Inc. | Microcavity light emitting diode method of manufacture |
| DE102008050643B4 (de) * | 2008-10-07 | 2022-11-03 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Leuchtmittel |
| US8455894B1 (en) | 2008-10-17 | 2013-06-04 | Soraa, Inc. | Photonic-crystal light emitting diode and method of manufacture |
| US9425172B2 (en) * | 2008-10-24 | 2016-08-23 | Cree, Inc. | Light emitter array |
| JP5274211B2 (ja) * | 2008-11-13 | 2013-08-28 | スタンレー電気株式会社 | 色変換発光装置 |
| JP5280818B2 (ja) * | 2008-11-28 | 2013-09-04 | シャープ株式会社 | 発光装置 |
| USRE47114E1 (en) | 2008-12-12 | 2018-11-06 | Slt Technologies, Inc. | Polycrystalline group III metal nitride with getter and method of making |
| US9543392B1 (en) | 2008-12-12 | 2017-01-10 | Soraa, Inc. | Transparent group III metal nitride and method of manufacture |
| US8987156B2 (en) | 2008-12-12 | 2015-03-24 | Soraa, Inc. | Polycrystalline group III metal nitride with getter and method of making |
| US8461071B2 (en) * | 2008-12-12 | 2013-06-11 | Soraa, Inc. | Polycrystalline group III metal nitride with getter and method of making |
| US8878230B2 (en) | 2010-03-11 | 2014-11-04 | Soraa, Inc. | Semi-insulating group III metal nitride and method of manufacture |
| TWI386728B (zh) * | 2009-01-20 | 2013-02-21 | Au Optronics Corp | 背光模組與液晶顯示器 |
| US20110100291A1 (en) * | 2009-01-29 | 2011-05-05 | Soraa, Inc. | Plant and method for large-scale ammonothermal manufacturing of gallium nitride boules |
| US7967652B2 (en) | 2009-02-19 | 2011-06-28 | Cree, Inc. | Methods for combining light emitting devices in a package and packages including combined light emitting devices |
| US8333631B2 (en) * | 2009-02-19 | 2012-12-18 | Cree, Inc. | Methods for combining light emitting devices in a package and packages including combined light emitting devices |
| JP4873024B2 (ja) * | 2009-02-23 | 2012-02-08 | ウシオ電機株式会社 | 光源装置 |
| US8247886B1 (en) | 2009-03-09 | 2012-08-21 | Soraa, Inc. | Polarization direction of optical devices using selected spatial configurations |
| KR100969160B1 (ko) * | 2009-03-10 | 2010-07-21 | 엘지이노텍 주식회사 | 발광소자 및 그 제조방법 |
| JP2009135539A (ja) * | 2009-03-16 | 2009-06-18 | Toyoda Gosei Co Ltd | 固体素子デバイスの製造方法 |
| WO2010110204A1 (ja) * | 2009-03-27 | 2010-09-30 | コニカミノルタオプト株式会社 | 蛍光体部材、蛍光体部材の製造方法、及び照明装置 |
| US8299473B1 (en) | 2009-04-07 | 2012-10-30 | Soraa, Inc. | Polarized white light devices using non-polar or semipolar gallium containing materials and transparent phosphors |
| US8634442B1 (en) | 2009-04-13 | 2014-01-21 | Soraa Laser Diode, Inc. | Optical device structure using GaN substrates for laser applications |
| US9531164B2 (en) * | 2009-04-13 | 2016-12-27 | Soraa Laser Diode, Inc. | Optical device structure using GaN substrates for laser applications |
| US8837545B2 (en) | 2009-04-13 | 2014-09-16 | Soraa Laser Diode, Inc. | Optical device structure using GaN substrates and growth structures for laser applications |
| US8306081B1 (en) | 2009-05-27 | 2012-11-06 | Soraa, Inc. | High indium containing InGaN substrates for long wavelength optical devices |
| US8791499B1 (en) | 2009-05-27 | 2014-07-29 | Soraa, Inc. | GaN containing optical devices and method with ESD stability |
| US8427590B2 (en) | 2009-05-29 | 2013-04-23 | Soraa, Inc. | Laser based display method and system |
| US9800017B1 (en) | 2009-05-29 | 2017-10-24 | Soraa Laser Diode, Inc. | Laser device and method for a vehicle |
| US8509275B1 (en) | 2009-05-29 | 2013-08-13 | Soraa, Inc. | Gallium nitride based laser dazzling device and method |
| US9829780B2 (en) | 2009-05-29 | 2017-11-28 | Soraa Laser Diode, Inc. | Laser light source for a vehicle |
| US9250044B1 (en) | 2009-05-29 | 2016-02-02 | Soraa Laser Diode, Inc. | Gallium and nitrogen containing laser diode dazzling devices and methods of use |
| US10108079B2 (en) | 2009-05-29 | 2018-10-23 | Soraa Laser Diode, Inc. | Laser light source for a vehicle |
| US8921876B2 (en) | 2009-06-02 | 2014-12-30 | Cree, Inc. | Lighting devices with discrete lumiphor-bearing regions within or on a surface of remote elements |
| DE102009030205A1 (de) * | 2009-06-24 | 2010-12-30 | Litec-Lp Gmbh | Leuchtstoffe mit Eu(II)-dotierten silikatischen Luminophore |
| KR101055762B1 (ko) * | 2009-09-01 | 2011-08-11 | 서울반도체 주식회사 | 옥시오소실리케이트 발광체를 갖는 발광 물질을 채택한 발광 장치 |
| JP5471091B2 (ja) * | 2009-07-07 | 2014-04-16 | 日亜化学工業株式会社 | 蛍光体及びこれを備える発光装置並びに蛍光体の製造方法 |
| KR101673913B1 (ko) * | 2009-07-20 | 2016-11-08 | 삼성전자 주식회사 | 발광 패키지 및 그 제조 방법 |
| CN102473854B (zh) * | 2009-07-31 | 2013-04-17 | Udc爱尔兰有限责任公司 | 用于有机器件的沉积材料以及用于制备有机器件的方法 |
| US8598809B2 (en) * | 2009-08-19 | 2013-12-03 | Cree, Inc. | White light color changing solid state lighting and methods |
| US9000466B1 (en) | 2010-08-23 | 2015-04-07 | Soraa, Inc. | Methods and devices for light extraction from a group III-nitride volumetric LED using surface and sidewall roughening |
| US8750342B1 (en) | 2011-09-09 | 2014-06-10 | Soraa Laser Diode, Inc. | Laser diodes with scribe structures |
| JP5777520B2 (ja) | 2009-09-17 | 2015-09-09 | 株式会社東芝 | 白色発光ランプおよびそれを用いた白色led照明装置 |
| US8355418B2 (en) | 2009-09-17 | 2013-01-15 | Soraa, Inc. | Growth structures and method for forming laser diodes on {20-21} or off cut gallium and nitrogen containing substrates |
| US8933644B2 (en) | 2009-09-18 | 2015-01-13 | Soraa, Inc. | LED lamps with improved quality of light |
| KR101368906B1 (ko) * | 2009-09-18 | 2014-02-28 | 소라, 인코포레이티드 | 전력 발광 다이오드 및 전류 밀도 작동 방법 |
| US9583678B2 (en) | 2009-09-18 | 2017-02-28 | Soraa, Inc. | High-performance LED fabrication |
| US9293644B2 (en) | 2009-09-18 | 2016-03-22 | Soraa, Inc. | Power light emitting diode and method with uniform current density operation |
| KR20120094477A (ko) | 2009-09-25 | 2012-08-24 | 크리, 인코포레이티드 | 낮은 눈부심 및 높은 광도 균일성을 갖는 조명 장치 |
| US8435347B2 (en) | 2009-09-29 | 2013-05-07 | Soraa, Inc. | High pressure apparatus with stackable rings |
| EP2488603B1 (de) | 2009-10-13 | 2014-01-08 | Merck Patent GmbH | Leuchtstoffmischungen mit europium dotierten ortho-silikaten |
| KR101034054B1 (ko) * | 2009-10-22 | 2011-05-12 | 엘지이노텍 주식회사 | 발광소자 패키지 및 그 제조방법 |
| US9435493B2 (en) | 2009-10-27 | 2016-09-06 | Cree, Inc. | Hybrid reflector system for lighting device |
| US20100276712A1 (en) * | 2009-11-03 | 2010-11-04 | Alexander Shaikevitch | Light emitting diode with thin multilayer phosphor film |
| DE112010004694A5 (de) * | 2009-12-07 | 2012-10-31 | Tridonic Gmbh & Co. Kg | Beleuchtung mit led |
| DE102009059798A1 (de) | 2009-12-21 | 2011-06-22 | LITEC-LP GmbH, 17489 | Mittel zur Verbesserung der Stabilität gegenüber der auftretenden Strahlenbelastung sowie Resistenz gegenüber dem Einfluß von Luftfeuchtigkeit bei Strontiumoxyorthosilikat-Leuchtstoffen |
| US8511851B2 (en) * | 2009-12-21 | 2013-08-20 | Cree, Inc. | High CRI adjustable color temperature lighting devices |
| TW201123548A (en) * | 2009-12-25 | 2011-07-01 | Ind Tech Res Inst | A multi-layer stacked LED package |
| KR20110076447A (ko) | 2009-12-29 | 2011-07-06 | 삼성전자주식회사 | 발광 장치 및 이를 포함하는 표시 장치 |
| US8905588B2 (en) | 2010-02-03 | 2014-12-09 | Sorra, Inc. | System and method for providing color light sources in proximity to predetermined wavelength conversion structures |
| US8740413B1 (en) | 2010-02-03 | 2014-06-03 | Soraa, Inc. | System and method for providing color light sources in proximity to predetermined wavelength conversion structures |
| US10147850B1 (en) | 2010-02-03 | 2018-12-04 | Soraa, Inc. | System and method for providing color light sources in proximity to predetermined wavelength conversion structures |
| JP2011171436A (ja) * | 2010-02-17 | 2011-09-01 | Tdk Corp | 電子部品内蔵モジュール及び電子部品内蔵モジュールの製造方法 |
| JP2011181793A (ja) * | 2010-03-03 | 2011-09-15 | Koito Mfg Co Ltd | 発光装置 |
| US9275979B2 (en) | 2010-03-03 | 2016-03-01 | Cree, Inc. | Enhanced color rendering index emitter through phosphor separation |
| JP2010124004A (ja) * | 2010-03-08 | 2010-06-03 | Toshiba Corp | 発光装置およびその製造方法 |
| JP5161907B2 (ja) * | 2010-03-08 | 2013-03-13 | 株式会社東芝 | 発光装置およびその製造方法 |
| US20110220920A1 (en) * | 2010-03-09 | 2011-09-15 | Brian Thomas Collins | Methods of forming warm white light emitting devices having high color rendering index values and related light emitting devices |
| US8643038B2 (en) * | 2010-03-09 | 2014-02-04 | Cree, Inc. | Warm white LEDs having high color rendering index values and related luminophoric mediums |
| CN101787277B (zh) * | 2010-03-09 | 2012-12-05 | 湘潭大学 | 一种硅酸盐黄色长余辉荧光体及其制备方法 |
| JP4932064B2 (ja) | 2010-03-11 | 2012-05-16 | パナソニック株式会社 | 発光モジュール、光源装置、液晶表示装置および発光モジュールの製造方法 |
| CN102792473B (zh) * | 2010-03-12 | 2015-11-25 | 株式会社东芝 | 白色照明装置 |
| JP2011216849A (ja) * | 2010-03-17 | 2011-10-27 | Tdk Corp | 電子回路モジュール部品及び電子回路モジュール部品の製造方法 |
| JP5747023B2 (ja) | 2010-03-18 | 2015-07-08 | 株式会社東芝 | 白色発光ランプおよびそれを用いた白色led照明装置 |
| JP5660662B2 (ja) * | 2010-03-19 | 2015-01-28 | 東芝ライテック株式会社 | 照明装置 |
| US9927611B2 (en) | 2010-03-29 | 2018-03-27 | Soraa Laser Diode, Inc. | Wearable laser based display method and system |
| TWI394827B (zh) * | 2010-04-20 | 2013-05-01 | China Glaze Co Ltd | 螢光材料與白光發光裝置 |
| US8450770B2 (en) * | 2010-05-11 | 2013-05-28 | Advanced Semiconductor Engineering, Inc. | Light emitting package structure |
| US8451876B1 (en) | 2010-05-17 | 2013-05-28 | Soraa, Inc. | Method and system for providing bidirectional light sources with broad spectrum |
| TW201143498A (en) * | 2010-05-17 | 2011-12-01 | Au Optronics Corp | Light emitting device |
| KR20130083388A (ko) * | 2010-05-20 | 2013-07-22 | 다리엔 루밍라이트 컴퍼니 리미티드 | 벗겨지는 광변환 발광필름 |
| US8684559B2 (en) | 2010-06-04 | 2014-04-01 | Cree, Inc. | Solid state light source emitting warm light with high CRI |
| US9564320B2 (en) | 2010-06-18 | 2017-02-07 | Soraa, Inc. | Large area nitride crystal and method for making it |
| US9450143B2 (en) | 2010-06-18 | 2016-09-20 | Soraa, Inc. | Gallium and nitrogen containing triangular or diamond-shaped configuration for optical devices |
| JP2012033823A (ja) * | 2010-08-02 | 2012-02-16 | Stanley Electric Co Ltd | 発光装置およびその製造方法 |
| US9234129B2 (en) | 2010-08-14 | 2016-01-12 | Seoul Semiconductor Co., Ltd. | Surface-modified quantum dot luminophores |
| US9196785B2 (en) | 2010-08-14 | 2015-11-24 | Seoul Semiconductor Co., Ltd. | Light emitting device having surface-modified quantum dot luminophores |
| WO2012023737A2 (en) | 2010-08-14 | 2012-02-23 | Seoul Semiconductor Co., Ltd. | Light emitting device having surface-modified silicate luminophores |
| US9614129B2 (en) | 2010-08-14 | 2017-04-04 | Seoul Semiconductor Co., Ltd. | Light emitting device having surface-modified luminophores |
| DE102010034322A1 (de) | 2010-08-14 | 2012-02-16 | Litec-Lp Gmbh | Oberflächenmodifizierter Silikatleuchtstoffe |
| JP2010272894A (ja) * | 2010-08-27 | 2010-12-02 | Toshiba Lighting & Technology Corp | 発光装置 |
| KR20120024104A (ko) | 2010-09-06 | 2012-03-14 | 서울옵토디바이스주식회사 | 발광 소자 |
| US20120057338A1 (en) * | 2010-09-06 | 2012-03-08 | Kabushiki Kaisha Toshiba | Light emitting device |
| JP4991958B2 (ja) * | 2010-09-06 | 2012-08-08 | 株式会社東芝 | 発光装置 |
| TWI457418B (zh) * | 2010-09-29 | 2014-10-21 | 友達光電股份有限公司 | 白光發光二極體裝置、發光裝置及液晶顯示器 |
| US8610341B2 (en) | 2010-10-05 | 2013-12-17 | Intematix Corporation | Wavelength conversion component |
| US8604678B2 (en) | 2010-10-05 | 2013-12-10 | Intematix Corporation | Wavelength conversion component with a diffusing layer |
| US9546765B2 (en) | 2010-10-05 | 2017-01-17 | Intematix Corporation | Diffuser component having scattering particles |
| US8957585B2 (en) | 2010-10-05 | 2015-02-17 | Intermatix Corporation | Solid-state light emitting devices with photoluminescence wavelength conversion |
| US8614539B2 (en) | 2010-10-05 | 2013-12-24 | Intematix Corporation | Wavelength conversion component with scattering particles |
| US8610340B2 (en) | 2010-10-05 | 2013-12-17 | Intematix Corporation | Solid-state light emitting devices and signage with photoluminescence wavelength conversion |
| US8729559B2 (en) | 2010-10-13 | 2014-05-20 | Soraa, Inc. | Method of making bulk InGaN substrates and devices thereon |
| US8654064B2 (en) * | 2010-10-18 | 2014-02-18 | Samsung Display Co., Ltd. | Backlight having blue light emitting diodes and method of driving same |
| JP5545866B2 (ja) * | 2010-11-01 | 2014-07-09 | シチズン電子株式会社 | 半導体発光装置 |
| US8816319B1 (en) | 2010-11-05 | 2014-08-26 | Soraa Laser Diode, Inc. | Method of strain engineering and related optical device using a gallium and nitrogen containing active region |
| JP2012109397A (ja) * | 2010-11-17 | 2012-06-07 | Panasonic Corp | 発光装置 |
| US8556469B2 (en) | 2010-12-06 | 2013-10-15 | Cree, Inc. | High efficiency total internal reflection optic for solid state lighting luminaires |
| DE102010054280B4 (de) * | 2010-12-13 | 2025-05-22 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Verfahren zum Erzeugen einer Lumineszenzkonversionsstoffschicht, Zusammensetzung hierfür und Bauelement umfassend eine solche Lumineszenzkonversionsstoffschicht |
| JP5733743B2 (ja) * | 2010-12-15 | 2015-06-10 | 日東電工株式会社 | 光半導体装置 |
| DE102010063760B4 (de) * | 2010-12-21 | 2022-12-29 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Verfahren zur Herstellung eines optoelektronischen Bauelements und optoelektronisches Bauelement |
| JP5621579B2 (ja) * | 2010-12-21 | 2014-11-12 | コニカミノルタ株式会社 | 蛍光体塗布装置および発光装置の製造方法 |
| JP5803941B2 (ja) * | 2010-12-28 | 2015-11-04 | コニカミノルタ株式会社 | 発光装置の製造方法 |
| US9595813B2 (en) | 2011-01-24 | 2017-03-14 | Soraa Laser Diode, Inc. | Laser package having multiple emitters configured on a substrate member |
| US9025635B2 (en) | 2011-01-24 | 2015-05-05 | Soraa Laser Diode, Inc. | Laser package having multiple emitters configured on a support member |
| US8786053B2 (en) | 2011-01-24 | 2014-07-22 | Soraa, Inc. | Gallium-nitride-on-handle substrate materials and devices and method of manufacture |
| US9318875B1 (en) | 2011-01-24 | 2016-04-19 | Soraa Laser Diode, Inc. | Color converting element for laser diode |
| US9093820B1 (en) | 2011-01-25 | 2015-07-28 | Soraa Laser Diode, Inc. | Method and structure for laser devices using optical blocking regions |
| US9786811B2 (en) | 2011-02-04 | 2017-10-10 | Cree, Inc. | Tilted emission LED array |
| US11251164B2 (en) | 2011-02-16 | 2022-02-15 | Creeled, Inc. | Multi-layer conversion material for down conversion in solid state lighting |
| US9260654B2 (en) * | 2011-03-11 | 2016-02-16 | Konica Minolta, Inc. | Manufacturing method for light emitting device and phosphor mixture |
| JP5498417B2 (ja) * | 2011-03-15 | 2014-05-21 | 株式会社東芝 | 半導体発光装置及びその製造方法 |
| JP5746553B2 (ja) * | 2011-04-28 | 2015-07-08 | 株式会社東芝 | 基板加工システム、および基板加工プログラム |
| CN102796522A (zh) * | 2011-05-27 | 2012-11-28 | 亿广科技(上海)有限公司 | 荧光粉组合物及使用该荧光粉组合物的白色发光装置 |
| JP2012246462A (ja) * | 2011-05-31 | 2012-12-13 | Sharp Corp | 発光装置 |
| KR101812997B1 (ko) * | 2011-06-03 | 2017-12-29 | 삼성디스플레이 주식회사 | 실리케이트 형광체, 실리케이트 형광체의 제조방법 및 이를 포함하는 발광 장치 |
| JP5863291B2 (ja) * | 2011-06-28 | 2016-02-16 | 株式会社小糸製作所 | 平面発光モジュール |
| USD700584S1 (en) | 2011-07-06 | 2014-03-04 | Cree, Inc. | LED component |
| US10842016B2 (en) | 2011-07-06 | 2020-11-17 | Cree, Inc. | Compact optically efficient solid state light source with integrated thermal management |
| CN102250611B (zh) * | 2011-07-26 | 2013-09-11 | 彩虹集团公司 | 一种硅酸盐绿色荧光粉及其制备方法 |
| US8686431B2 (en) | 2011-08-22 | 2014-04-01 | Soraa, Inc. | Gallium and nitrogen containing trilateral configuration for optical devices |
| JP2013067710A (ja) * | 2011-09-21 | 2013-04-18 | Dexerials Corp | 被覆蛍光体の製造方法、被覆蛍光体及び白色光源 |
| JP6076909B2 (ja) * | 2011-09-26 | 2017-02-08 | コニカミノルタ株式会社 | 蛍光体分散液、およびled装置の製造方法 |
| WO2013046674A1 (ja) * | 2011-09-27 | 2013-04-04 | コニカミノルタアドバンストレイヤー株式会社 | Led装置の製造方法 |
| US9141157B2 (en) * | 2011-10-13 | 2015-09-22 | Texas Instruments Incorporated | Molded power supply system having a thermally insulated component |
| JPWO2013061511A1 (ja) * | 2011-10-27 | 2015-04-02 | パナソニック株式会社 | 発光装置 |
| US8912025B2 (en) | 2011-11-23 | 2014-12-16 | Soraa, Inc. | Method for manufacture of bright GaN LEDs using a selective removal process |
| DE102011056813A1 (de) * | 2011-12-21 | 2013-06-27 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung einer Leuchtdiode |
| US8482104B2 (en) | 2012-01-09 | 2013-07-09 | Soraa, Inc. | Method for growth of indium-containing nitride films |
| WO2013134432A1 (en) | 2012-03-06 | 2013-09-12 | Soraa, Inc. | Light emitting diodes with low refractive index material layers to reduce light guiding effects |
| JP2013201274A (ja) * | 2012-03-23 | 2013-10-03 | Toshiba Lighting & Technology Corp | 照明装置 |
| CN103375708B (zh) * | 2012-04-26 | 2015-10-28 | 展晶科技(深圳)有限公司 | 发光二极管灯源装置 |
| CN102769080A (zh) * | 2012-05-31 | 2012-11-07 | 杭州士兰明芯科技有限公司 | 一种白光led芯片及其制作方法 |
| JP5578739B2 (ja) | 2012-07-30 | 2014-08-27 | 住友金属鉱山株式会社 | アルカリ土類金属シリケート蛍光体及びその製造方法 |
| WO2014024138A1 (en) * | 2012-08-10 | 2014-02-13 | Koninklijke Philips N.V. | A phosphor converted light emitting diode, a lamp and a luminaire |
| US8971368B1 (en) | 2012-08-16 | 2015-03-03 | Soraa Laser Diode, Inc. | Laser devices having a gallium and nitrogen containing semipolar surface orientation |
| US9978904B2 (en) | 2012-10-16 | 2018-05-22 | Soraa, Inc. | Indium gallium nitride light emitting devices |
| JP2014086520A (ja) * | 2012-10-23 | 2014-05-12 | Sharp Corp | 発光装置 |
| KR102090163B1 (ko) | 2012-10-26 | 2020-03-18 | 삼성디스플레이 주식회사 | 백라이트 유닛 및 이를 포함하는 표시 장치 |
| TWI545806B (zh) * | 2012-10-30 | 2016-08-11 | 晶元光電股份有限公司 | 波長轉換材料及其應用 |
| CN102965102A (zh) * | 2012-10-31 | 2013-03-13 | 彩虹集团公司 | 一种硅酸盐绿色荧光粉的制备方法 |
| CN102994082B (zh) * | 2012-12-13 | 2014-07-02 | 昆明理工大学 | 一种铋离子掺杂的锗酸盐白色光荧光粉及其制备方法 |
| US8802471B1 (en) | 2012-12-21 | 2014-08-12 | Soraa, Inc. | Contacts for an n-type gallium and nitrogen substrate for optical devices |
| US9761763B2 (en) | 2012-12-21 | 2017-09-12 | Soraa, Inc. | Dense-luminescent-materials-coated violet LEDs |
| CN103883955A (zh) * | 2012-12-22 | 2014-06-25 | 鸿富锦精密工业(深圳)有限公司 | Led车灯 |
| US20140185269A1 (en) | 2012-12-28 | 2014-07-03 | Intermatix Corporation | Solid-state lamps utilizing photoluminescence wavelength conversion components |
| JP6010638B2 (ja) * | 2013-01-23 | 2016-10-19 | シャープ株式会社 | 発光装置 |
| US8754435B1 (en) * | 2013-02-19 | 2014-06-17 | Cooledge Lighting Inc. | Engineered-phosphor LED package and related methods |
| US8933478B2 (en) | 2013-02-19 | 2015-01-13 | Cooledge Lighting Inc. | Engineered-phosphor LED packages and related methods |
| US8890196B2 (en) * | 2013-03-14 | 2014-11-18 | Goldeneye, Inc. | Lightweight self-cooling light sources |
| WO2014151263A1 (en) | 2013-03-15 | 2014-09-25 | Intematix Corporation | Photoluminescence wavelength conversion components |
| JP6076804B2 (ja) * | 2013-03-29 | 2017-02-08 | 株式会社朝日ラバー | 蛍光体含有シートの製造方法 |
| DE102013206225A1 (de) * | 2013-04-09 | 2014-10-09 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement und Verfahren zu seiner Herstellung |
| US9617471B2 (en) * | 2013-04-25 | 2017-04-11 | National Institute Of Materials Science | Inorganic phosphor, manufacture thereof, light-emitting device, and image display utilizing inorganic phosphor |
| TWI523293B (zh) * | 2013-05-21 | 2016-02-21 | 長興材料工業股份有限公司 | 光色轉換膜及其製造方法 |
| CN104241262B (zh) | 2013-06-14 | 2020-11-06 | 惠州科锐半导体照明有限公司 | 发光装置以及显示装置 |
| US9166372B1 (en) | 2013-06-28 | 2015-10-20 | Soraa Laser Diode, Inc. | Gallium nitride containing laser device configured on a patterned substrate |
| US8994033B2 (en) | 2013-07-09 | 2015-03-31 | Soraa, Inc. | Contacts for an n-type gallium and nitrogen substrate for optical devices |
| CN110350069B (zh) * | 2013-07-24 | 2023-06-30 | 晶元光电股份有限公司 | 包含波长转换材料的发光管芯及其制作方法 |
| CN105684170B (zh) * | 2013-08-09 | 2019-09-03 | 株式会社光波 | 发光装置 |
| US9410664B2 (en) | 2013-08-29 | 2016-08-09 | Soraa, Inc. | Circadian friendly LED light source |
| US9362715B2 (en) | 2014-02-10 | 2016-06-07 | Soraa Laser Diode, Inc | Method for manufacturing gallium and nitrogen bearing laser devices with improved usage of substrate material |
| US9520695B2 (en) | 2013-10-18 | 2016-12-13 | Soraa Laser Diode, Inc. | Gallium and nitrogen containing laser device having confinement region |
| US9379525B2 (en) | 2014-02-10 | 2016-06-28 | Soraa Laser Diode, Inc. | Manufacturable laser diode |
| US9368939B2 (en) | 2013-10-18 | 2016-06-14 | Soraa Laser Diode, Inc. | Manufacturable laser diode formed on C-plane gallium and nitrogen material |
| JP6384893B2 (ja) * | 2013-10-23 | 2018-09-05 | 株式会社光波 | 単結晶蛍光体及び発光装置 |
| CA2927594A1 (en) * | 2013-10-28 | 2015-05-07 | GE Lighting Solutions, LLC | Lamps for enhanced optical brightening and color preference |
| KR101524946B1 (ko) * | 2013-12-17 | 2015-06-02 | 주식회사 효성 | 고연색성의 백색 형광체 조성물, 및 이를 포함하는 백색 발광 다이오드 |
| JP6244906B2 (ja) * | 2013-12-27 | 2017-12-13 | 日亜化学工業株式会社 | 半導体発光装置 |
| US9209596B1 (en) | 2014-02-07 | 2015-12-08 | Soraa Laser Diode, Inc. | Manufacturing a laser diode device from a plurality of gallium and nitrogen containing substrates |
| US9871350B2 (en) | 2014-02-10 | 2018-01-16 | Soraa Laser Diode, Inc. | Manufacturable RGB laser diode source |
| US9520697B2 (en) | 2014-02-10 | 2016-12-13 | Soraa Laser Diode, Inc. | Manufacturable multi-emitter laser diode |
| KR20150096198A (ko) * | 2014-02-14 | 2015-08-24 | 삼성전자주식회사 | 발광 소자 패키지 및 그 제조 방법 |
| US9590148B2 (en) * | 2014-03-18 | 2017-03-07 | GE Lighting Solutions, LLC | Encapsulant modification in heavily phosphor loaded LED packages for improved stability |
| US9680067B2 (en) | 2014-03-18 | 2017-06-13 | GE Lighting Solutions, LLC | Heavily phosphor loaded LED packages having higher stability |
| CN103923646B (zh) * | 2014-04-10 | 2015-06-10 | 上海应用技术学院 | 一种黄色荧光粉及其制备方法 |
| CN105431953B (zh) * | 2014-06-05 | 2018-03-16 | 上海富迪照明电器有限公司 | 基于固态荧光材料的嵌入式白光led封装结构及其制作方法 |
| KR102221599B1 (ko) * | 2014-06-18 | 2021-03-02 | 엘지이노텍 주식회사 | 발광 소자 패키지 |
| US9564736B1 (en) | 2014-06-26 | 2017-02-07 | Soraa Laser Diode, Inc. | Epitaxial growth of p-type cladding regions using nitrogen gas for a gallium and nitrogen containing laser diode |
| JP6681351B2 (ja) * | 2014-06-30 | 2020-04-15 | ローディア オペレーションズ | ケイ酸マグネシウムの懸濁液、その製造方法および蛍光体としてのその使用 |
| CN105322071B (zh) * | 2014-07-29 | 2018-08-14 | 深圳大学 | 一种芯片级白光led及其制作方法 |
| JP6280014B2 (ja) * | 2014-09-30 | 2018-02-14 | 新光電気工業株式会社 | 半導体装置及びその製造方法 |
| JP6353763B2 (ja) * | 2014-09-30 | 2018-07-04 | 新光電気工業株式会社 | 半導体装置及びその製造方法 |
| US12126143B2 (en) | 2014-11-06 | 2024-10-22 | Kyocera Sld Laser, Inc. | Method of manufacture for an ultraviolet emitting optoelectronic device |
| US9246311B1 (en) | 2014-11-06 | 2016-01-26 | Soraa Laser Diode, Inc. | Method of manufacture for an ultraviolet laser diode |
| US9666677B1 (en) | 2014-12-23 | 2017-05-30 | Soraa Laser Diode, Inc. | Manufacturable thin film gallium and nitrogen containing devices |
| US9653642B1 (en) | 2014-12-23 | 2017-05-16 | Soraa Laser Diode, Inc. | Manufacturable RGB display based on thin film gallium and nitrogen containing light emitting diodes |
| US9646957B2 (en) * | 2015-01-14 | 2017-05-09 | Everlight Electronics Co., Ltd. | LED packaging structure having stacked arrangement of protection element and LED chip |
| JP6833683B2 (ja) | 2015-06-12 | 2021-02-24 | 株式会社東芝 | 蛍光体およびその製造方法、ならびにledランプ |
| CN106328008B (zh) * | 2015-06-30 | 2019-03-22 | 光宝光电(常州)有限公司 | 胶体填充至壳体的制法、发光二极管的数字显示器及制法 |
| JP6472728B2 (ja) | 2015-08-04 | 2019-02-20 | 日亜化学工業株式会社 | 発光装置および発光装置を備えたバックライト |
| US10879673B2 (en) | 2015-08-19 | 2020-12-29 | Soraa Laser Diode, Inc. | Integrated white light source using a laser diode and a phosphor in a surface mount device package |
| US11437774B2 (en) | 2015-08-19 | 2022-09-06 | Kyocera Sld Laser, Inc. | High-luminous flux laser-based white light source |
| US11437775B2 (en) | 2015-08-19 | 2022-09-06 | Kyocera Sld Laser, Inc. | Integrated light source using a laser diode |
| US10938182B2 (en) | 2015-08-19 | 2021-03-02 | Soraa Laser Diode, Inc. | Specialized integrated light source using a laser diode |
| US9787963B2 (en) | 2015-10-08 | 2017-10-10 | Soraa Laser Diode, Inc. | Laser lighting having selective resolution |
| US9882107B2 (en) * | 2016-01-12 | 2018-01-30 | Citizen Electronics Co., Ltd. | LED package with covered bonding wire |
| DE102017201882A1 (de) | 2016-02-09 | 2017-08-24 | Nichia Corporation | Leuchtvorrichtung und die Leuchtvorrichtung aufweisende Hintergrundbeleuchtung |
| EP3451031B1 (en) * | 2016-04-25 | 2022-03-09 | NGK Spark Plug Co., Ltd. | Wavelength conversion member, production method therefor, and light emitting device |
| DE102016212070A1 (de) * | 2016-07-04 | 2018-01-04 | Osram Gmbh | Beleuchtungseinrichtung und fahrzeugscheinwerfer mit beleuchtungseinrichtung |
| JP6998114B2 (ja) * | 2016-12-27 | 2022-02-04 | 日亜化学工業株式会社 | 発光装置の製造方法 |
| CN109000207B (zh) * | 2017-06-06 | 2020-09-15 | 光宝科技股份有限公司 | 光源组件 |
| TWI702362B (zh) * | 2017-07-13 | 2020-08-21 | 東貝光電科技股份有限公司 | Led發光裝置 |
| US10771155B2 (en) | 2017-09-28 | 2020-09-08 | Soraa Laser Diode, Inc. | Intelligent visible light with a gallium and nitrogen containing laser source |
| JP7120745B2 (ja) * | 2017-09-29 | 2022-08-17 | 日本特殊陶業株式会社 | 光波長変換装置及び光複合装置 |
| US10222474B1 (en) | 2017-12-13 | 2019-03-05 | Soraa Laser Diode, Inc. | Lidar systems including a gallium and nitrogen containing laser light source |
| WO2019124046A1 (ja) * | 2017-12-18 | 2019-06-27 | パナソニックIpマネジメント株式会社 | 発光装置 |
| US10763414B2 (en) * | 2017-12-18 | 2020-09-01 | Rohm Co., Ltd. | Semiconductor light-emitting device |
| US10551728B1 (en) | 2018-04-10 | 2020-02-04 | Soraa Laser Diode, Inc. | Structured phosphors for dynamic lighting |
| CN108550682A (zh) * | 2018-05-15 | 2018-09-18 | 深圳市泛珠科技发展有限公司 | 一种led灯 |
| US20190393112A1 (en) * | 2018-06-25 | 2019-12-26 | Elizabeth Nofen | Encapsulant material containing fluorophores for in-situ visualization of stress in an organic package |
| WO2020060283A1 (ko) * | 2018-09-20 | 2020-03-26 | 주식회사 엘지화학 | 유기 발광 소자 |
| EP3892068A1 (en) * | 2018-12-04 | 2021-10-13 | Signify Holding B.V. | Crisp white tuning |
| US11239637B2 (en) | 2018-12-21 | 2022-02-01 | Kyocera Sld Laser, Inc. | Fiber delivered laser induced white light system |
| US11421843B2 (en) | 2018-12-21 | 2022-08-23 | Kyocera Sld Laser, Inc. | Fiber-delivered laser-induced dynamic light system |
| WO2020137780A1 (ja) * | 2018-12-27 | 2020-07-02 | 日本電気硝子株式会社 | 波長変換部材及び発光装置 |
| US12000552B2 (en) | 2019-01-18 | 2024-06-04 | Kyocera Sld Laser, Inc. | Laser-based fiber-coupled white light system for a vehicle |
| US12152742B2 (en) | 2019-01-18 | 2024-11-26 | Kyocera Sld Laser, Inc. | Laser-based light guide-coupled wide-spectrum light system |
| US11884202B2 (en) | 2019-01-18 | 2024-01-30 | Kyocera Sld Laser, Inc. | Laser-based fiber-coupled white light system |
| US11228158B2 (en) | 2019-05-14 | 2022-01-18 | Kyocera Sld Laser, Inc. | Manufacturable laser diodes on a large area gallium and nitrogen containing substrate |
| US10903623B2 (en) | 2019-05-14 | 2021-01-26 | Soraa Laser Diode, Inc. | Method and structure for manufacturable large area gallium and nitrogen containing substrate |
| CN110156036B (zh) * | 2019-05-30 | 2020-10-16 | 东北大学 | 一种单斜晶re3bo6球形颗粒的制备方法 |
| TWI814842B (zh) * | 2019-06-17 | 2023-09-11 | 大陸商蘇州鐸力斯科技有限公司 | 白光發光二極體及包含其之背光模組與顯示裝置 |
| EP3991209A1 (en) | 2019-06-25 | 2022-05-04 | Lumileds LLC | Phosphor layer for micro-led applications |
| CN110690357B (zh) * | 2019-09-04 | 2021-01-01 | 武汉华星光电半导体显示技术有限公司 | 显示面板 |
| US11362243B2 (en) | 2019-10-09 | 2022-06-14 | Lumileds Llc | Optical coupling layer to improve output flux in LEDs |
| US20230104278A1 (en) * | 2020-03-24 | 2023-04-06 | Denka Company Limited | Phosphor particle, composite, light- emitting device, and self-light-emitting display |
| US12191626B1 (en) | 2020-07-31 | 2025-01-07 | Kyocera Sld Laser, Inc. | Vertically emitting laser devices and chip-scale-package laser devices and laser-based, white light emitting devices |
| US20230093367A1 (en) * | 2021-01-06 | 2023-03-23 | Seoul Viosys Co., Ltd. | Light emitting device and light emitting module having the same |
| CN114699992B (zh) * | 2022-02-17 | 2023-01-06 | 四川马边龙泰磷电有限责任公司 | 一种硝酸钙热解装置 |
Family Cites Families (155)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4481422A (en) | 1969-06-12 | 1984-11-06 | The United States Of America As Represented By The Secretary Of The Army | Intrusion detecting camouflage fluorescent coating |
| JPS57158923A (en) * | 1981-03-27 | 1982-09-30 | Hitachi Ltd | Method for forming fluorescent screen of cathode-ray tube |
| JPS60177028A (ja) | 1984-02-23 | 1985-09-11 | Nok Corp | 耐熱性硬化性樹脂成形品の製造法 |
| IT1196142B (it) * | 1984-06-11 | 1988-11-10 | Sicor Spa | Procedimento per la preparazione di 16,17-acetali di derivati pregnanici e nuovi composti ottenuti |
| US4727512A (en) * | 1984-12-06 | 1988-02-23 | Computer Design & Applications, Inc. | Interface adaptor emulating magnetic tape drive |
| US4775969A (en) * | 1986-05-15 | 1988-10-04 | Aquidneck Systems International, Inc. | Optical disk storage format, method and apparatus for emulating a magnetic tape drive |
| US5872669A (en) * | 1988-03-01 | 1999-02-16 | Seagate Technology, Inc. | Disk drive apparatus with power conservation capability |
| US5438674A (en) * | 1988-04-05 | 1995-08-01 | Data/Ware Development, Inc. | Optical disk system emulating magnetic tape units |
| US5455926A (en) * | 1988-04-05 | 1995-10-03 | Data/Ware Development, Inc. | Virtual addressing of optical storage media as magnetic tape equivalents |
| JPH0823643B2 (ja) * | 1989-03-28 | 1996-03-06 | シャープ株式会社 | アクティブマトリクス表示装置 |
| US5235695A (en) * | 1989-06-28 | 1993-08-10 | International Business Machines Corporation | Apparatus for efficient utilization of removable data recording media |
| US5673412A (en) * | 1990-07-13 | 1997-09-30 | Hitachi, Ltd. | Disk system and power-on sequence for the same |
| US5274799A (en) * | 1991-01-04 | 1993-12-28 | Array Technology Corporation | Storage device array architecture with copyback cache |
| US5358668A (en) | 1991-07-08 | 1994-10-25 | Agfa-Gevaert, N.V. | Photostimulable phosphor and its use in radiography |
| DE69218387T2 (de) * | 1992-01-07 | 1997-09-18 | Philips Electronics Nv | Niederdruckquecksilberentladungslampe |
| ES2096710T3 (es) | 1992-01-07 | 1997-03-16 | Philips Electronics Nv | Lampara de descarga de mercurio, de baja presion. |
| JPH05287082A (ja) | 1992-04-08 | 1993-11-02 | Nitto Denko Corp | 超微粒子分散樹脂組成物の製法 |
| US5297124A (en) * | 1992-04-24 | 1994-03-22 | Miltope Corporation | Tape drive emulation system for a disk drive |
| WO1994025913A2 (en) * | 1993-04-30 | 1994-11-10 | Novadigm, Inc. | Method and apparatus for enterprise desktop management |
| JPH086854A (ja) * | 1993-12-23 | 1996-01-12 | Unisys Corp | アウトボードファイルキャッシュ外部処理コンプレックス |
| US5485321A (en) * | 1993-12-29 | 1996-01-16 | Storage Technology Corporation | Format and method for recording optimization |
| US5864346A (en) * | 1994-09-12 | 1999-01-26 | Nintendo Co., Ltd. | Picture display unit and image display system |
| US5774292A (en) * | 1995-04-13 | 1998-06-30 | International Business Machines Corporation | Disk drive power management system and method |
| US5666538A (en) * | 1995-06-07 | 1997-09-09 | Ast Research, Inc. | Disk power manager for network servers |
| JPH0917350A (ja) | 1995-06-30 | 1997-01-17 | Ryuji Ozawa | 高解像力を持った陰極線管の蛍光膜 |
| JP3067592B2 (ja) * | 1995-06-30 | 2000-07-17 | ヤマハ株式会社 | 通信端末装置 |
| US5774643A (en) * | 1995-10-13 | 1998-06-30 | Digital Equipment Corporation | Enhanced raid write hole protection and recovery |
| US5774715A (en) * | 1996-03-27 | 1998-06-30 | Sun Microsystems, Inc. | File system level compression using holes |
| JPH1077468A (ja) | 1996-08-30 | 1998-03-24 | Kasei Optonix Co Ltd | 蛍光体 |
| US5673382A (en) * | 1996-05-30 | 1997-09-30 | International Business Machines Corporation | Automated management of off-site storage volumes for disaster recovery |
| DE19638667C2 (de) * | 1996-09-20 | 2001-05-17 | Osram Opto Semiconductors Gmbh | Mischfarbiges Licht abstrahlendes Halbleiterbauelement mit Lumineszenzkonversionselement |
| US5777433A (en) * | 1996-07-11 | 1998-07-07 | Hewlett-Packard Company | High refractive index package material and a light emitting device encapsulated with such material |
| TW383508B (en) * | 1996-07-29 | 2000-03-01 | Nichia Kagaku Kogyo Kk | Light emitting device and display |
| JP2927279B2 (ja) | 1996-07-29 | 1999-07-28 | 日亜化学工業株式会社 | 発光ダイオード |
| US6021408A (en) * | 1996-09-12 | 2000-02-01 | Veritas Software Corp. | Methods for operating a log device |
| CA2221216A1 (en) * | 1996-11-15 | 1998-05-15 | Mark Squibb | System and apparatus for merging a write event journal and an original storage to produce an updated storage using an event map |
| JPH10163535A (ja) | 1996-11-27 | 1998-06-19 | Kasei Optonix Co Ltd | 白色発光素子 |
| US5809511A (en) * | 1997-01-02 | 1998-09-15 | International Business Machines Corporation | Outboard data migration in a volume stacking library |
| US5875479A (en) * | 1997-01-07 | 1999-02-23 | International Business Machines Corporation | Method and means for making a dual volume level copy in a DASD storage subsystem subject to updating during the copy interval |
| US5949970A (en) * | 1997-01-07 | 1999-09-07 | Unisys Corporation | Dual XPCS for disaster recovery |
| US6098148A (en) * | 1997-05-29 | 2000-08-01 | International Business Machines Corporation | Storage and access of data using volume trailer |
| US6041329A (en) * | 1997-05-29 | 2000-03-21 | International Business Machines Corporation | Automated message processing system configured to automatically manage introduction of removable data storage media into media library |
| US6578120B1 (en) * | 1997-06-24 | 2003-06-10 | International Business Machines Corporation | Synchronization and resynchronization of loosely-coupled copy operations between a primary and a remote secondary DASD volume under concurrent updating |
| US6496791B1 (en) * | 1997-07-09 | 2002-12-17 | Neville Yates | Interfaces for an open systems server providing tape drive emulation |
| US5974424A (en) * | 1997-07-11 | 1999-10-26 | International Business Machines Corporation | Parallel file system and method with a metadata node |
| JP3282176B2 (ja) | 1997-07-14 | 2002-05-13 | 日亜化学工業株式会社 | 発光ダイオードの形成方法 |
| JP3985852B2 (ja) | 1997-07-17 | 2007-10-03 | 株式会社日立プラズマパテントライセンシング | プラズマディスプレイパネル |
| US6389503B1 (en) * | 1997-08-04 | 2002-05-14 | Exabyte Corporation | Tape drive emulation by removable disk drive and media formatted therefor |
| US6128698A (en) * | 1997-08-04 | 2000-10-03 | Exabyte Corporation | Tape drive emulator for removable disk drive |
| US6173359B1 (en) * | 1997-08-27 | 2001-01-09 | International Business Machines Corp. | Storage and access to scratch mounts in VTS system |
| JPH1187778A (ja) * | 1997-09-02 | 1999-03-30 | Toshiba Corp | 半導体発光素子、半導体発光装置およびその製造方法 |
| JPH11145519A (ja) | 1997-09-02 | 1999-05-28 | Toshiba Corp | 半導体発光素子、半導体発光装置および画像表示装置 |
| US6044442A (en) * | 1997-11-21 | 2000-03-28 | International Business Machines Corporation | External partitioning of an automated data storage library into multiple virtual libraries for access by a plurality of hosts |
| US6105037A (en) * | 1997-12-12 | 2000-08-15 | International Business Machines Corporation | Apparatus for performing automated reconcile control in a virtual tape system |
| US6304880B1 (en) * | 1997-12-12 | 2001-10-16 | International Business Machines Corporation | Automated reclamation scheduling override in a virtual tape server |
| US6023709A (en) * | 1997-12-15 | 2000-02-08 | International Business Machines Corporation | Automated file error classification and correction in a hierarchical storage management system |
| US6061309A (en) * | 1997-12-17 | 2000-05-09 | International Business Machines Corporation | Method and apparatus for maintaining states of an operator panel and convenience input/output station of a dual library manager/dual accessor controller system in the event of a failure to one controller |
| US6029179A (en) * | 1997-12-18 | 2000-02-22 | International Business Machines Corporation | Automated read-only volume processing in a virtual tape server |
| US6725331B1 (en) * | 1998-01-07 | 2004-04-20 | Emc Corporation | Method and apparatus for managing the dynamic assignment resources in a data storage system |
| US6131148A (en) * | 1998-01-26 | 2000-10-10 | International Business Machines Corporation | Snapshot copy of a secondary volume of a PPRC pair |
| US6294800B1 (en) * | 1998-02-06 | 2001-09-25 | General Electric Company | Phosphors for white light generation from UV emitting diodes |
| JP3399342B2 (ja) | 1998-02-17 | 2003-04-21 | 日亜化学工業株式会社 | 発光ダイオードの形成方法 |
| JP3307316B2 (ja) | 1998-02-27 | 2002-07-24 | サンケン電気株式会社 | 半導体発光装置 |
| JPH11246510A (ja) | 1998-03-04 | 1999-09-14 | New Japan Chem Co Ltd | 希土類錯体 |
| US6408369B1 (en) * | 1998-03-12 | 2002-06-18 | Emc Corporation | Internal copy for a storage controller |
| US6260110B1 (en) * | 1998-04-02 | 2001-07-10 | Emc Corporation | Virtual tape system with variable size |
| US6070224A (en) * | 1998-04-02 | 2000-05-30 | Emc Corporation | Virtual tape system |
| US6177030B1 (en) * | 1998-04-23 | 2001-01-23 | Konica Corporation | Stimulable phosphor and radiation image conversion panel by use thereof |
| US6269423B1 (en) * | 1998-05-13 | 2001-07-31 | International Business Machines Corporation | Method and apparatus for providing improved caching for a virtual tape server |
| US6067587A (en) * | 1998-06-17 | 2000-05-23 | Sutmyn Storage Corporation | Method for serializing and synchronizing data packets by utilizing a physical lock system and a control data structure for mutual exclusion lock |
| US20020095557A1 (en) * | 1998-06-22 | 2002-07-18 | Colin Constable | Virtual data storage (VDS) system |
| US6353837B1 (en) * | 1998-06-30 | 2002-03-05 | Emc Corporation | Method and apparatus providing mass storage access from systems using different meta-data formats |
| JP2000017257A (ja) | 1998-06-30 | 2000-01-18 | Nichia Chem Ind Ltd | 蛍光体及びそれを用いた発光スクリーン |
| JP3618552B2 (ja) * | 1998-06-30 | 2005-02-09 | 富士通株式会社 | 記憶装置 |
| US6289425B1 (en) * | 1998-07-01 | 2001-09-11 | Storage Technology Corporation | Method for verifying availability of data space in virtual tape system |
| JP2000020187A (ja) * | 1998-07-07 | 2000-01-21 | Fujitsu Ltd | 情報処理装置及び電力制御方法並びに記録媒体 |
| US6547617B1 (en) * | 1998-07-08 | 2003-04-15 | Hiroyuki Kawamura | Plasma display panel manufacturing method for manufacturing a plasma display panel with superior picture quality, a manufacturing apparatus and a phosphor ink |
| JP4171107B2 (ja) * | 1998-07-09 | 2008-10-22 | スタンレー電気株式会社 | 面状光源 |
| JP3645422B2 (ja) | 1998-07-14 | 2005-05-11 | 東芝電子エンジニアリング株式会社 | 発光装置 |
| US6049848A (en) * | 1998-07-15 | 2000-04-11 | Sutmyn Storage Corporation | System and method for performing high-speed tape positioning operations |
| US6195730B1 (en) * | 1998-07-24 | 2001-02-27 | Storage Technology Corporation | Computer system with storage device mapping input/output processor |
| US6269431B1 (en) * | 1998-08-13 | 2001-07-31 | Emc Corporation | Virtual storage and block level direct access of secondary storage for recovery of backup data |
| JP2000063682A (ja) | 1998-08-25 | 2000-02-29 | New Japan Chem Co Ltd | 希土類錯体を含む樹脂組成物及び成形体 |
| JP3507710B2 (ja) * | 1998-09-11 | 2004-03-15 | 株式会社東芝 | 電気機器における電源回路 |
| JP3296301B2 (ja) * | 1998-09-11 | 2002-06-24 | 松下電器産業株式会社 | 蛍光体層の形成方法及びそれを用いたプラズマディスプレイパネルの製造方法 |
| US6266784B1 (en) * | 1998-09-15 | 2001-07-24 | International Business Machines Corporation | Direct storage of recovery plan file on remote server for disaster recovery and storage management thereof |
| JP2000160155A (ja) | 1998-09-24 | 2000-06-13 | Konica Corp | 希土類付活アルカリ土類金属弗化ハロゲン化物系輝尽性蛍光体、その防湿処理方法、放射線像変換パネルおよび輝尽性蛍光体の製造方法 |
| DE69937993C5 (de) | 1998-09-28 | 2019-01-10 | Koninklijke Philips N.V. | Beleuchtungsanordnung |
| US6458512B1 (en) * | 1998-10-13 | 2002-10-01 | 3M Innovative Properties Company | Oxynitride encapsulated electroluminescent phosphor particles |
| US6207077B1 (en) * | 2000-02-18 | 2001-03-27 | Orion 21 A.D. Pty Ltd | Luminescent gel coats and moldable resins |
| US6247096B1 (en) * | 1998-11-02 | 2001-06-12 | International Business Machines Corporation | Handling eject requests of logical volumes in a data storage subsystem |
| JP2000150966A (ja) | 1998-11-16 | 2000-05-30 | Matsushita Electronics Industry Corp | 半導体発光装置及びその製造方法 |
| JP2000147766A (ja) | 1998-11-17 | 2000-05-26 | Dainippon Printing Co Ltd | 蛍光体パターン形成用組成物及びプラズマディスプレイ背面板の製造方法 |
| US6429583B1 (en) * | 1998-11-30 | 2002-08-06 | General Electric Company | Light emitting device with ba2mgsi2o7:eu2+, ba2sio4:eu2+, or (srxcay ba1-x-y)(a1zga1-z)2sr:eu2+phosphors |
| JP3968933B2 (ja) | 1998-12-25 | 2007-08-29 | コニカミノルタホールディングス株式会社 | エレクトロルミネッセンス素子 |
| JP2000208822A (ja) | 1999-01-11 | 2000-07-28 | Matsushita Electronics Industry Corp | 半導体発光装置 |
| JP3470949B2 (ja) * | 1999-02-05 | 2003-11-25 | シャープ株式会社 | 半導体発光装置 |
| US6680569B2 (en) * | 1999-02-18 | 2004-01-20 | Lumileds Lighting U.S. Llc | Red-deficiency compensating phosphor light emitting device |
| US6351069B1 (en) * | 1999-02-18 | 2002-02-26 | Lumileds Lighting, U.S., Llc | Red-deficiency-compensating phosphor LED |
| US6336173B1 (en) * | 1999-04-01 | 2002-01-01 | International Business Machines Corporation | Storing and tracking multiple copies of data in data storage libraries |
| JP3399440B2 (ja) | 1999-04-26 | 2003-04-21 | 松下電器産業株式会社 | 複合発光素子と発光装置及びその製造方法 |
| US6360232B1 (en) * | 1999-06-02 | 2002-03-19 | International Business Machines Corporation | Disaster recovery method for a removable media library |
| JP3337000B2 (ja) | 1999-06-07 | 2002-10-21 | サンケン電気株式会社 | 半導体発光装置 |
| JP2000345152A (ja) * | 1999-06-07 | 2000-12-12 | Nichia Chem Ind Ltd | 黄色発光残光性フォトルミネッセンス蛍光体 |
| JP3690968B2 (ja) | 1999-06-30 | 2005-08-31 | 日亜化学工業株式会社 | 発光装置及びその形成方法 |
| JP2001026416A (ja) | 1999-07-12 | 2001-01-30 | Kansai Research Institute | 粒子分散体 |
| WO2001008453A1 (de) * | 1999-07-23 | 2001-02-01 | Osram Opto Semiconductors Gmbh & Co. Ohg | Leuchtstoffanordnung, wellenlängenkonvertierende vergussmasse und lichtquelle |
| DE19951790A1 (de) * | 1999-10-27 | 2001-05-03 | Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh | Leuchtstoff für Lichtquellen und zugehörige Lichtquelle |
| US6336163B1 (en) * | 1999-07-30 | 2002-01-01 | International Business Machines Corporation | Method and article of manufacture for inserting volumes for import into a virtual tape server |
| JP2001144331A (ja) | 1999-09-02 | 2001-05-25 | Toyoda Gosei Co Ltd | 発光装置 |
| JP3511987B2 (ja) | 1999-09-09 | 2004-03-29 | 日亜化学工業株式会社 | 発光ダイオード |
| US7203732B2 (en) * | 1999-11-11 | 2007-04-10 | Miralink Corporation | Flexible remote data mirroring |
| JP2001228809A (ja) | 1999-12-09 | 2001-08-24 | Fuji Photo Film Co Ltd | ディスプレイ装置 |
| JP4045710B2 (ja) | 1999-12-16 | 2008-02-13 | 松下電器産業株式会社 | 半導体発光装置の製造方法 |
| JP2001196639A (ja) * | 2000-01-12 | 2001-07-19 | Sanyo Electric Co Ltd | Led発光素子及びその製造方法 |
| JP3763719B2 (ja) | 2000-02-02 | 2006-04-05 | 独立行政法人科学技術振興機構 | オキシ窒化物ガラスを母体材料とした蛍光体 |
| US6615365B1 (en) * | 2000-03-11 | 2003-09-02 | Powerquest Corporation | Storing a computer disk image within an imaged partition |
| JP4406490B2 (ja) | 2000-03-14 | 2010-01-27 | 株式会社朝日ラバー | 発光ダイオード |
| US6621211B1 (en) * | 2000-05-15 | 2003-09-16 | General Electric Company | White light emitting phosphor blends for LED devices |
| JP2001337865A (ja) * | 2000-05-25 | 2001-12-07 | Minolta Co Ltd | ファイル生成方法およびファイル管理方法ならびにファイル |
| CA2381189A1 (en) * | 2000-06-02 | 2001-12-13 | Inrange Technologies Corporation | Message queue server system |
| US6766520B1 (en) * | 2000-06-08 | 2004-07-20 | Unisys Corporation | Tape drive emulation software objects, and emulation of other peripheral systems for computers |
| DE10036940A1 (de) | 2000-07-28 | 2002-02-07 | Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh | Lumineszenz-Konversions-LED |
| JP2002050797A (ja) * | 2000-07-31 | 2002-02-15 | Toshiba Corp | 半導体励起蛍光体発光装置およびその製造方法 |
| US6635363B1 (en) * | 2000-08-21 | 2003-10-21 | General Electric Company | Phosphor coating with self-adjusting distance from LED chip |
| JP2002074811A (ja) * | 2000-08-30 | 2002-03-15 | Nec Corp | 電源供給制御システム及び電源供給制御方法 |
| US6614103B1 (en) * | 2000-09-01 | 2003-09-02 | General Electric Company | Plastic packaging of LED arrays |
| US6694447B1 (en) * | 2000-09-29 | 2004-02-17 | Sun Microsystems, Inc. | Apparatus and method for increasing application availability during a disaster fail-back |
| JP3725413B2 (ja) | 2000-10-06 | 2005-12-14 | 松下電器産業株式会社 | 半導体発光装置 |
| US6557089B1 (en) * | 2000-11-28 | 2003-04-29 | International Business Machines Corporation | Backup by ID-suppressed instant virtual copy then physical backup copy with ID reintroduced |
| US20020083265A1 (en) * | 2000-12-26 | 2002-06-27 | Brough Farrell Lynn | Methods for increasing cache capacity |
| AT410266B (de) | 2000-12-28 | 2003-03-25 | Tridonic Optoelectronics Gmbh | Lichtquelle mit einem lichtemittierenden element |
| US20020084745A1 (en) | 2000-12-29 | 2002-07-04 | Airma Optoelectronics Corporation | Light emitting diode with light conversion by dielectric phosphor powder |
| US7007141B2 (en) * | 2001-01-30 | 2006-02-28 | Data Domain, Inc. | Archival data storage system and method |
| US20020117672A1 (en) * | 2001-02-23 | 2002-08-29 | Ming-Sung Chu | High-brightness blue-light emitting crystalline structure |
| JP3629216B2 (ja) * | 2001-03-08 | 2005-03-16 | 株式会社東芝 | デフラグメンテーション機能を有するディスク記憶システム、及び同システムにおけるデフラグメンテーション方法 |
| US6779057B2 (en) * | 2001-04-18 | 2004-08-17 | International Business Machines Corporation | Method, system, and program for indicating data transmitted to an input/output device as committed |
| US6915397B2 (en) * | 2001-06-01 | 2005-07-05 | Hewlett-Packard Development Company, L.P. | System and method for generating point in time storage copy |
| US6642652B2 (en) * | 2001-06-11 | 2003-11-04 | Lumileds Lighting U.S., Llc | Phosphor-converted light emitting device |
| US6779058B2 (en) * | 2001-07-13 | 2004-08-17 | International Business Machines Corporation | Method, system, and program for transferring data between storage devices |
| US6625704B2 (en) * | 2001-08-08 | 2003-09-23 | Sangate Systems, Inc. | Data backup method and system using snapshot and virtual tape |
| JP3749243B2 (ja) | 2001-09-03 | 2006-02-22 | 松下電器産業株式会社 | 半導体発光デバイス,発光装置及び半導体発光デバイスの製造方法 |
| JP2007329511A (ja) | 2001-09-03 | 2007-12-20 | Matsushita Electric Ind Co Ltd | 半導体発光装置 |
| JP3756930B2 (ja) | 2001-09-03 | 2006-03-22 | 松下電器産業株式会社 | 半導体発光デバイスの製造方法 |
| US6877016B1 (en) * | 2001-09-13 | 2005-04-05 | Unisys Corporation | Method of capturing a physically consistent mirrored snapshot of an online database |
| US7072910B2 (en) * | 2002-03-22 | 2006-07-04 | Network Appliance, Inc. | File folding technique |
| TWI226357B (en) * | 2002-05-06 | 2005-01-11 | Osram Opto Semiconductors Gmbh | Wavelength-converting reaction-resin, its production method, light-radiating optical component and light-radiating semiconductor-body |
| JP4216006B2 (ja) * | 2002-06-14 | 2009-01-28 | 株式会社日立製作所 | 記憶装置の制御方法 |
| US7100089B1 (en) * | 2002-09-06 | 2006-08-29 | 3Pardata, Inc. | Determining differences between snapshots |
| US7127577B2 (en) * | 2003-01-21 | 2006-10-24 | Equallogic Inc. | Distributed snapshot process |
| US7055009B2 (en) * | 2003-03-21 | 2006-05-30 | International Business Machines Corporation | Method, system, and program for establishing and maintaining a point-in-time copy |
| US7111136B2 (en) * | 2003-06-26 | 2006-09-19 | Hitachi, Ltd. | Method and apparatus for backup and recovery system using storage based journaling |
| US7032126B2 (en) * | 2003-07-08 | 2006-04-18 | Softek Storage Solutions Corporation | Method and apparatus for creating a storage pool by dynamically mapping replication schema to provisioned storage volumes |
| US7096331B1 (en) * | 2003-09-29 | 2006-08-22 | Emc Corporation | System and method for managing data associated with copying and replication procedures in a data storage environment |
| JP4440208B2 (ja) | 2005-12-15 | 2010-03-24 | 日本電信電話株式会社 | 光クロスコネクト装置の光パス切り替え方法および光パス切り替え制御装置 |
-
2002
- 2002-09-03 JP JP2003525920A patent/JP3749243B2/ja not_active Expired - Fee Related
- 2002-09-03 TW TW091120032A patent/TW595012B/zh not_active IP Right Cessation
- 2002-09-03 CN CN2008101460967A patent/CN101335322B/zh not_active Expired - Fee Related
- 2002-09-03 KR KR1020037007224A patent/KR100923804B1/ko not_active Expired - Fee Related
- 2002-09-03 KR KR1020087021486A patent/KR20080087049A/ko not_active Ceased
- 2002-09-03 EP EP08014529A patent/EP2017901A1/en not_active Withdrawn
- 2002-09-03 US US10/469,740 patent/US7023019B2/en not_active Expired - Fee Related
- 2002-09-03 WO PCT/JP2002/008959 patent/WO2003021691A1/ja not_active Ceased
- 2002-09-03 EP EP02762994A patent/EP1367655A4/en not_active Withdrawn
- 2002-09-03 CN CNB028029925A patent/CN100423296C/zh not_active Expired - Fee Related
-
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- 2005-06-03 US US11/143,660 patent/US7422504B2/en not_active Expired - Fee Related
-
2006
- 2006-02-09 US US11/349,896 patent/US7629620B2/en not_active Expired - Fee Related
- 2006-10-25 US US11/585,892 patent/US7592639B2/en not_active Ceased
-
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- 2007-10-19 US US11/908,000 patent/US7772769B2/en not_active Expired - Fee Related
-
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- 2008-08-09 JP JP2008206464A patent/JP4676519B2/ja not_active Expired - Fee Related
-
2009
- 2009-12-01 JP JP2009273548A patent/JP5308318B2/ja not_active Expired - Fee Related
-
2012
- 2012-02-08 JP JP2012025450A patent/JP2012099863A/ja not_active Withdrawn
-
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- 2016-07-05 US US15/201,883 patent/USRE47453E1/en not_active Expired - Lifetime
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Also Published As
| Publication number | Publication date |
|---|---|
| US20080135862A1 (en) | 2008-06-12 |
| EP1367655A1 (en) | 2003-12-03 |
| EP1367655A4 (en) | 2009-05-06 |
| CN101335322A (zh) | 2008-12-31 |
| JP2010050490A (ja) | 2010-03-04 |
| US7422504B2 (en) | 2008-09-09 |
| JP2012099863A (ja) | 2012-05-24 |
| JP3749243B2 (ja) | 2006-02-22 |
| CN100423296C (zh) | 2008-10-01 |
| US7023019B2 (en) | 2006-04-04 |
| CN101335322B (zh) | 2010-12-08 |
| JP4676519B2 (ja) | 2011-04-27 |
| US20040104391A1 (en) | 2004-06-03 |
| US20050227569A1 (en) | 2005-10-13 |
| US7772769B2 (en) | 2010-08-10 |
| JP5308318B2 (ja) | 2013-10-09 |
| US7629620B2 (en) | 2009-12-08 |
| JPWO2003021691A1 (ja) | 2004-12-24 |
| US7592639B2 (en) | 2009-09-22 |
| WO2003021691A1 (en) | 2003-03-13 |
| KR20040029313A (ko) | 2004-04-06 |
| EP2017901A1 (en) | 2009-01-21 |
| KR100923804B1 (ko) | 2009-10-27 |
| CN1633718A (zh) | 2005-06-29 |
| US20070046169A1 (en) | 2007-03-01 |
| USRE47453E1 (en) | 2019-06-25 |
| KR20080087049A (ko) | 2008-09-29 |
| JP2009021613A (ja) | 2009-01-29 |
| US20060124942A1 (en) | 2006-06-15 |
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