WO2009066430A1 - 半導体発光装置および半導体発光装置の製造方法 - Google Patents

半導体発光装置および半導体発光装置の製造方法 Download PDF

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Publication number
WO2009066430A1
WO2009066430A1 PCT/JP2008/003308 JP2008003308W WO2009066430A1 WO 2009066430 A1 WO2009066430 A1 WO 2009066430A1 JP 2008003308 W JP2008003308 W JP 2008003308W WO 2009066430 A1 WO2009066430 A1 WO 2009066430A1
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WIPO (PCT)
Prior art keywords
light emitting
semiconductor light
emitting device
inclining
side face
Prior art date
Application number
PCT/JP2008/003308
Other languages
English (en)
French (fr)
Inventor
Yoshiyuki Ide
Hidenori Kamei
Isamu Yonekura
Kunihiko Obara
Koichi Nakahara
Kouji Nakatsu
Yoshirou Tooya
Toshirou Kitazono
Toshihide Maeda
Kenichi Koya
Takahiro Shirahata
Original Assignee
Panasonic Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Panasonic Corporation filed Critical Panasonic Corporation
Priority to US12/743,330 priority Critical patent/US8552444B2/en
Priority to EP08852410.3A priority patent/EP2221885A4/en
Priority to CN200880115867A priority patent/CN101855735A/zh
Priority to JP2009542468A priority patent/JPWO2009066430A1/ja
Publication of WO2009066430A1 publication Critical patent/WO2009066430A1/ja

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    • H—ELECTRICITY
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  • Led Devices (AREA)

Abstract

【課題】半導体発光素子からの光は全方向に進む。そのため、照明方向以外に進む光は有効に利用できない。半導体発光素子の側面に傾斜面をつけ、そこに反射層を形成する手段は提案されているものの、エッチングなどの方法で傾斜面をつけるため、加工に時間がかかる、傾斜面の制御が困難といった課題があった。 【解決手段】半導体発光素子をサブマウントに配設し、封止材で封止した後、隣接する半導体発光素子の間に溝加工を施す。できた溝に反射材を充填し、射光面を研磨し、切り分けることで、側面に反射層が形成された半導体発光装置を得ることができる。
PCT/JP2008/003308 2007-11-19 2008-11-13 半導体発光装置および半導体発光装置の製造方法 WO2009066430A1 (ja)

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EP2221885A1 (en) 2010-08-25
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EP2221885A4 (en) 2013-09-25
CN101855735A (zh) 2010-10-06
KR20100077213A (ko) 2010-07-07
JPWO2009066430A1 (ja) 2011-03-31
US8552444B2 (en) 2013-10-08

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