TWI583019B - Light emitting diode and manufacturing method thereof - Google Patents

Light emitting diode and manufacturing method thereof Download PDF

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Publication number
TWI583019B
TWI583019B TW104123854A TW104123854A TWI583019B TW I583019 B TWI583019 B TW I583019B TW 104123854 A TW104123854 A TW 104123854A TW 104123854 A TW104123854 A TW 104123854A TW I583019 B TWI583019 B TW I583019B
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Taiwan
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light
wafer
emitting diode
fixing piece
manufacturing
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TW104123854A
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TW201631791A (zh
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丁紹瀅
黃靖恩
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新世紀光電股份有限公司
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Priority to CN201610088972.XA priority Critical patent/CN105895748A/zh
Priority to US15/045,440 priority patent/US9728672B2/en
Publication of TW201631791A publication Critical patent/TW201631791A/zh
Application granted granted Critical
Publication of TWI583019B publication Critical patent/TWI583019B/zh
Priority to US15/670,050 priority patent/US10177272B2/en

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Description

發光二極體及其製造方法
本發明是有關於一種發光二極體及其製造方法，特別是指一種將一發光二極體晶圓經由研磨、切割、劈裂等步驟而製造出的發光二極體及其製造方法。
已知的發光二極體在製造上，先於一基板上磊晶形成一發光元件，該發光元件包括一n型半導體層、一發光層與一p型半導體層。該基板與該發光元件共同構成一發光二極體晶圓，再將該發光二極體晶圓之設有該發光元件的一側表面藉由具黏著性的蠟液固定於一工作台上，接著研磨加工該基板之相反於該發光元件的一側表面，使該基板達到預定之較薄的厚度，後續再將該發光二極體晶圓自該工作台上移除，並進行切割晶圓、分離切割後的小片晶圓片等步驟，以得到數個發光二極體。
由於發光二極體晶圓自該工作台上取下後，發光二極體晶圓會有殘留應力而容易彎曲，加上該基板研磨後的厚度薄，導致因應力而彎曲的效應將更明顯。此外，基板厚度薄也容易產生破裂等損傷，特別是於切割晶圓過程更可能有破片或其他損傷，故已知發光二極體製法有待 改良。
因此，本發明之目的，即在提供一種可提升產品品質、避免晶圓彎曲與基板破片的發光二極體的製造方法及發光二極體。
於是，本發明發光二極體的製造方法，包含：步驟A：提供一發光二極體晶圓，該發光二極體晶圓包括一基板；步驟B：將該發光二極體晶圓固定於一工作台上，加工該發光二極體晶圓，使該基板的厚度小於或等於100μm；步驟C：先將一固定片貼附在該發光二極體晶圓的表面，再自該工作台取下該發光二極體晶圓；步驟D：將該發光二極體晶圓連同該固定片進行切割與劈裂，使該發光二極體晶圓形成數個發光二極體；步驟E：移除該固定片。
本發明還提供一種發光二極體，如上述的製法所製造出。
本發明還提供一種發光二極體，包含一基板及一發光單元。該發光單元包括一n型半導體層、一p型半導體層，以及一位於該n型半導體層與該p型半導體層間的發光層。其中，該基板厚度為該發光單元厚度的2~20倍。
本發明還提供一種發光二極體，包含一基板及一發光單元。該發光單元包括一n型半導體層、一p型半導體層，以及一位於該n型半導體層與該p型半導體層間的發光層。其中，該發光二極體的發散角為115°~140°。
本發明之功效：藉由在該工作台取下該發光二極體晶圓之前，先將該固定片貼附在該發光二極體晶圓上，可提供發光二極體晶圓支撐力量，維持晶圓片平整、避免彎曲，而且該固定片有助於提升發光二極體晶圓的結構強度，可避免基板破裂或其他損傷，從而提升製作出的產品品質與可靠度。此外，該發光二極體藉由元件間適當的厚度比例(如上述的2~20倍)，或者具有適當的發散角，可達到較佳的集中光線效果，有利於應用在需要光線集中的場合。
11~18‧‧‧步驟
2‧‧‧發光二極體晶圓
20‧‧‧發光二極體
21‧‧‧基板
211‧‧‧第一面
212‧‧‧第二面
22‧‧‧發光單元
221‧‧‧n型半導體層
222‧‧‧p型半導體層
223‧‧‧發光層
3‧‧‧工作台
4‧‧‧固定片
5‧‧‧彈性膜
51‧‧‧擴張環
本發明之其他的特徵及功效，將於參照圖式的實施方式中清楚地呈現，其中：圖1是一發光二極體晶圓的示意圖，顯示本發明發光二極體的製造方法的一實施例，是對該發光二極體晶圓進行加工而得到數個發光二極體；圖2是該實施例之步驟流程方塊圖；圖3是該實施例之部分步驟進行時的示意圖，圖3中各步驟流程是以側視示意圖為例，且為方便示意，圖3未將該發光二極體晶圓中的所有層體(如圖1)一一繪出，而是僅以二層體示意；圖4是該實施例之其餘步驟進行時的示意圖，圖4中各步驟流程是以立體示意圖為例，且為方便示意，圖4僅以一層體示意該發光二極體晶圓；圖5是本發明發光二極體的一實施例的示意圖；及 圖6為一光強度與光輻射角的關係圖，其中顯示發光二極體具有不同的基板厚度時，光強度與光輻射角角度的關係亦有所改變。
參閱圖1~4，本發明發光二極體的製造方法之一實施例包含：
步驟11：提供一發光二極體晶圓2，該發光二極體晶圓2包括一基板21，以及一披覆於該基板21上的發光單元22。該基板211可以為藍寶石基板、氮化鎵基板、氮化鋁基板、矽基板、碳化矽基板等等，實施時不須特別限定該基板211之種類，而本實施例是採用藍寶石基板。該基板21之厚度約為430μm左右，並具有相反的一第一面211與一第二面212。
該發光單元22位於該基板211之第一面211上，並具有一位於該第一面211上的n型半導體層221、一間隔地位於該n型半導體層221上方的p型半導體層222，以及一位於該n型半導體221層與該p型半導體層222間的發光層223。以氮化鎵系的發光二極體為例，該n型半導體層221與該p型半導體層222可分別為n型與p型的氮化鎵材料。該發光層223又稱為主動層(Active Layer)，可以為多重量子井(MQW)結構。該發光層223材料可包含氮化鎵、氮化銦鎵、氮化鋁鎵等等。但實施時不須特別限定該發光單元222之各層材料。此外，該發光二極體晶圓2還包括一圖未示出且連接該發光單元22的電極，可將外部電 力輸送至該發光單元22，使該發光單元22可將電能轉換為光。由於該電極非本發明的改良重點，故不再說明。
步驟12：透過研磨方式加工該發光二極體晶圓2，使該基板21的厚度小於或等於100μm，更佳地小於或等於50μm。具體來說，本步驟是使該基板21的第一面211朝下，該第二面212朝上，並於該發光單元22表面塗布具有黏著性的蠟液，以將該發光二極體晶圓2黏著固定於一工作台3上，此步驟又可稱為上蠟。接著可利用一研磨機研磨該基板21的第二面212，以及利用一拋光機拋光，最後使該基板21的厚度小於或等於100μm。
步驟13：將一固定片4貼附在該發光二極體晶圓2之一表面。本實施例之固定片4為一個表面具有黏膠而具有黏性的片體，且該固定片4是黏貼在該基板21之朝上的該表面上。
步驟14：利用丙酮(ACE)、異丙醇(IPA)等液體進行清洗，去除該發光二極體晶圓2之朝向該工作台3的表面的蠟，並將該發光二極體晶圓2自該工作台3上取下。本步驟又稱為下蠟。
步驟15：將該發光二極體晶圓2固定於一彈性膜5(亦可稱為藍膜)上，該彈性膜5周圍框繞有一擴張環51。該發光二極體晶圓2是以設有該發光單元22的一側朝向該彈性膜5，而設有該固定片4的一側則朝外。
步驟16：將該發光二極體晶圓2連同該固定片4進行切割與劈裂，使該發光二極體晶圓2形成數個發光二 極體20。具體而言，本步驟可利用雷射切割(Laser Scribing)方式，依預定尺寸將該發光二極體晶圓2切割出數個區塊。接著沿切割線痕跡，施加瞬間衝力即可使該等區塊彼此斷開，此步驟可稱為劈裂(Breaking)，如此就可得到數個發光二極體20。
步驟17：朝該固定片4照射紫外光以使該黏膠分解，再將該固定片4自該等發光二極體20上撕除。
步驟18：利用一圖未示的擴片機，將該彈性膜5朝徑向方向向外(如圖4最後一流程之箭頭方向)拉撐擴張，使該等發光二極體20隨著該彈性膜5擴張而彼此分離。經由此擴張步驟後，相鄰的該等發光二極體20間存有一定的距離，以利於將各個發光二極體20一一自該彈性膜5上取下。配合參閱圖5，本發明由上述方法製作出的該等發光二極體20，每一發光二極體20與圖1之該發光二極體晶圓2的尺寸不同，但所包含的層體相同，同樣包含一基板21、一n型半導體層221、一位於該n型半導體層221上方的p型半導體層222，以及一位於該n型半導體221層與該p型半導體層222間的發光層223。
本發明將該基板21的厚度研磨至小於或等於100μm，甚至是小於或等於50μm，為一種超薄化的製程，有利於發光二極體20微小、薄型化。本發明於該工作台3取下該發光二極體晶圓2之前(亦即下蠟之前)，先將該固定片4貼附在該發光二極體晶圓2上，可提供發光二極體晶圓2支撐力量，維持晶圓片平整、避免彎曲，從而可避 免取下該發光二極體晶圓2時，因殘留應力而造成的晶圓彎曲問題。而且固定片4有助於提升發光二極體晶圓2的結構強度，可避免發光二極體20產生破裂或其他損傷，例如在切割晶圓時，可避免破片問題，提升製作出的產品品質與可靠度。此外，本實施例的固定片4上設有可受UV光照射而分解的黏膠，因此透過UV光照射後即可使黏膠分解，將該固定片4撕除。此移除步驟簡單、易於進行。
參閱圖5，接著進一步說明，本發明之發光二極體20於結構設計上，該基板21厚度可為20~100μm，且該基板21厚度可為該發光單元22厚度的2~20倍，更佳地為5~10倍。當厚度比例如上述的2~20倍時，可以使該發光二極體20的射出光線集中，出光角度較小，如此有利於應用在例如手機閃光燈此種需要光線集中的場合。此外，該基板21厚度與上述厚度比例過大時，將不利於薄型化，因此以上述範圍為佳。
該發光二極體20的發散角(beam-divergence angle)範圍，較佳地為115°~140°，更佳地為115°~130°，在上述角度範圍內，可達到較佳的集中光線效果，有利於應用在需要光線集中的場合，而且上述發散角範圍也是配合適當的基板21厚度所得到。參閱圖6，所述發散角可由下述方式測得：透過量測發光二極體20的光強度分布，可得到光強度與光輻射角度(Radiation angle)的關係圖，其中，最大光強度值之一半所對應的角度即為發光二極體20的發散角。故由圖6可看出，當發光二極體的基板厚度不同時 ，其發散角亦有所不同。表1列舉其中幾種基板厚度與發散角的關係。
惟以上所述者，僅為本發明之實施例而已，當不能以此限定本發明實施之範圍，凡是依本發明申請專利範圍及專利說明書內容所作之簡單的等效變化與修飾，皆仍屬本發明專利涵蓋之範圍內。
2‧‧‧發光二極體晶圓
21‧‧‧基板
211‧‧‧第一面
212‧‧‧第二面
22‧‧‧發光單元
3‧‧‧工作台
4‧‧‧固定片

Claims (9)

  1. 一種發光二極體的製造方法，包含：步驟A：提供一發光二極體晶圓，該發光二極體晶圓包括一基板；步驟B：將該發光二極體晶圓固定於一工作台上，加工該發光二極體晶圓，使該基板的厚度小於或等於100μm；步驟C：先將一固定片貼附在該發光二極體晶圓的表面，再自該工作台取下該發光二極體晶圓；步驟D：將該發光二極體晶圓連同該固定片進行切割與劈裂，使該發光二極體晶圓形成數個發光二極體；及步驟E：移除該固定片。
  2. 如請求項1所述的發光二極體的製造方法，其中，該固定片為一個表面具有黏膠的片體，步驟E是朝該固定片照射紫外光以使該黏膠分解，再將該固定片自該等發光二極體上移除。
  3. 如請求項1所述的發光二極體的製造方法，還包含一位於該步驟C與該步驟D之間的步驟F，以及一位於該步驟E之後的步驟G，其中，該步驟F是將該發光二極體晶圓固定於一彈性膜上，該步驟G是將該彈性膜拉撐擴張，使該等發光二極體隨著該彈性膜擴張而彼此分離。
  4. 一種發光二極體二極體的製造方法，包含：提供一晶圓於一工作台上； 將一固定片貼附在該晶圓上；將該晶圓貼附至一彈性膜上，使得該晶圓位於該固定片與該彈性膜之間而形成一複合體；將該複合體中的該晶圓分割成多個發光二極體；自該複合體上移除該固定片而留下該彈性膜及貼附在其上的該些發光二極體；以及擴張該彈性膜，而使該些發光二極體之間的距離擴大。
  5. 如請求項4所述的發光二極體的製造方法，其中，提供該晶圓於該工作台上的步驟包含：藉由一具有黏性的蠟液，將該晶圓黏著固定於該工作台上。
  6. 如請求項5所述的發光二極體的製造方法，其中提供該晶圓於該工作台上的步驟更包含：研磨該晶圓的一表面。
  7. 如請求項5所述的發光二極體的製造方法，其中於將該晶圓貼附至該彈性膜上的步驟前更包含：清除該晶圓上的該蠟液。
  8. 如請求項4所述的發光二極體的製造方法，其中將該複合體中的該晶圓分割成多個發光二極體的步驟更包含：在該晶圓上形成多個切割痕跡以及沿著該些切割痕跡而劈裂該晶圓。
  9. 如請求項4所述的發光二極體的製造方法，其中自該複合體上移除該固定片的步驟更包含：朝該固定片照射一紫外光線。
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Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102014202424A1 (de) * 2014-02-11 2015-08-13 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement mit einer reflektierenden Schichtenfolge und Verfahren zum Erzeugen einer reflektierenden Schichtenfolge
TWI557952B (zh) 2014-06-12 2016-11-11 新世紀光電股份有限公司 發光元件
CN107689409B (zh) * 2016-08-03 2019-09-20 展晶科技(深圳)有限公司 发光二极管
CN107768495A (zh) 2016-08-18 2018-03-06 新世纪光电股份有限公司 微型发光二极管及其制造方法
CN108231974B (zh) 2016-12-21 2022-09-02 日亚化学工业株式会社 发光装置的制造方法
KR20180081371A (ko) * 2017-01-06 2018-07-16 서울바이오시스 주식회사 전류 차단층을 가지는 발광 소자
CN108336075B (zh) * 2017-01-20 2020-03-27 光宝光电(常州)有限公司 发光二极管封装结构、发光二极管封装模块及其成形方法
US10497845B2 (en) 2017-03-27 2019-12-03 Seoul Semiconductor Co., Ltd. Display apparatus and method of manufacturing the same
US10749076B2 (en) * 2017-06-29 2020-08-18 Epistar Corporation Light-emitting device
TWI757187B (zh) * 2017-09-13 2022-03-01 晶元光電股份有限公司 半導體元件
CN107808921A (zh) * 2017-10-27 2018-03-16 扬州乾照光电有限公司 一种led显示模块、制造方法及其封装方法
CN108365061B (zh) * 2018-02-06 2020-01-14 映瑞光电科技(上海)有限公司 一种led芯片及其制造方法
KR102453678B1 (ko) * 2018-02-20 2022-10-11 에피스타 코포레이션 발광소자 및 그의 제작방법
TWI821302B (zh) * 2018-11-12 2023-11-11 晶元光電股份有限公司 半導體元件及其封裝結構
CN111200047A (zh) * 2018-11-20 2020-05-26 诺沛半导体有限公司 全让位发光二极管载板
US10635626B1 (en) * 2019-02-01 2020-04-28 I/O Interconnect, Ltd. Connecting method and docking station for connecting electronic device and computer
TWI809953B (zh) * 2019-03-21 2023-07-21 晶元光電股份有限公司 發光元件
CN110137126B (zh) * 2019-03-25 2022-01-11 苏州芯海半导体科技有限公司 一种半导体晶圆双膜切割方法
TWI740148B (zh) * 2019-05-24 2021-09-21 李宛儒 一種表面修飾化之發光晶片及其製備方法
US11075328B2 (en) * 2019-06-05 2021-07-27 Mikro Mesa Technology Co., Ltd. Method of forming conductive area at top surface of light-emitting diode
TWI818070B (zh) * 2019-08-30 2023-10-11 晶元光電股份有限公司 發光元件及其製造方法
CN215989229U (zh) * 2020-02-10 2022-03-08 东友精细化工有限公司 天线堆叠结构和包括天线堆叠结构的显示装置
CN112968105B (zh) * 2020-04-24 2021-12-21 重庆康佳光电技术研究院有限公司 一种Micro LED芯片巨量转移方法及一种显示背板
TWI724911B (zh) * 2020-05-26 2021-04-11 友達光電股份有限公司 發光裝置及其製造方法
WO2022011635A1 (zh) * 2020-07-16 2022-01-20 苏州晶湛半导体有限公司 半导体结构及其制作方法
KR20220073541A (ko) * 2020-11-26 2022-06-03 엘지디스플레이 주식회사 백라이트 유닛 및 그를 포함하는 표시 장치
CN112928196B (zh) * 2021-01-29 2022-07-29 厦门天马微电子有限公司 一种显示面板及其制作方法、显示装置
CN113053328B (zh) * 2021-03-23 2022-07-29 高创(苏州)电子有限公司 发光器件及其驱动方法和发光基板及其驱动方法
CN113328017B (zh) * 2021-05-24 2022-06-21 厦门乾照光电股份有限公司 一种通孔式垂直结构led芯片及其制作方法
CN113363370A (zh) * 2021-06-02 2021-09-07 厦门乾照光电股份有限公司 一种垂直结构led芯片及其制作方法
CN113488495B (zh) * 2021-06-16 2022-09-09 深圳市华星光电半导体显示技术有限公司 显示面板及其制备方法
TWI820539B (zh) * 2021-12-16 2023-11-01 隆達電子股份有限公司 發光裝置及其形成方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW518771B (en) * 2001-09-13 2003-01-21 United Epitaxy Co Ltd LED and the manufacturing method thereof
TW200520249A (en) * 2003-12-02 2005-06-16 Hon Hai Prec Ind Co Ltd Light emitting diode and backlight module
TW201222864A (en) * 2010-11-16 2012-06-01 Epistar Corp Light-emitting diode chip and the manufacturing method thereof
TWM434309U (en) * 2012-03-30 2012-07-21 N Tec Corp LED wafer thinning structure

Family Cites Families (96)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3239061B2 (ja) * 1996-02-29 2001-12-17 シャープ株式会社 発光ダイオード及びその製造方法
DE69839300T2 (de) * 1997-12-15 2009-04-16 Philips Lumileds Lighting Company, LLC, San Jose Licht-emittierende Vorrichtung
TW543128B (en) * 2001-07-12 2003-07-21 Highlink Technology Corp Surface mounted and flip chip type LED package
JP2004006498A (ja) * 2002-05-31 2004-01-08 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体発光素子
CN1185721C (zh) * 2002-06-25 2005-01-19 光磊科技股份有限公司 发光二极管
US20040188696A1 (en) * 2003-03-28 2004-09-30 Gelcore, Llc LED power package
TWI220076B (en) * 2003-08-27 2004-08-01 Au Optronics Corp Light-emitting device
US7179670B2 (en) * 2004-03-05 2007-02-20 Gelcore, Llc Flip-chip light emitting diode device without sub-mount
JP2006066868A (ja) * 2004-03-23 2006-03-09 Toyoda Gosei Co Ltd 固体素子および固体素子デバイス
US7375380B2 (en) * 2004-07-12 2008-05-20 Rohm Co., Ltd. Semiconductor light emitting device
JP2006100420A (ja) * 2004-09-28 2006-04-13 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体発光素子
CN100369277C (zh) * 2004-12-28 2008-02-13 中华映管股份有限公司 发光二极管
US7045375B1 (en) * 2005-01-14 2006-05-16 Au Optronics Corporation White light emitting device and method of making same
JP4778745B2 (ja) * 2005-07-27 2011-09-21 パナソニック株式会社 半導体発光装置及びその製造方法
US20070131947A1 (en) * 2005-12-13 2007-06-14 Lg Innotek Co., Ltd Light-emitting device
JP2007165611A (ja) * 2005-12-14 2007-06-28 Showa Denko Kk 窒化ガリウム系化合物半導体発光素子及びその製造方法
WO2007072967A1 (en) * 2005-12-19 2007-06-28 Showa Denko K.K. Flip-chip type semiconductor light-emitting device, method for manufacturing flip-chip type semiconductor light-emitting device, printed circuit board for flip-chip type semiconductor light-emitting device, mounting structure for flip-chip type semiconductor light-emitting device-and light-emitting diode lamp
TWI301331B (en) * 2006-05-17 2008-09-21 Epistar Corp Light emitting device
JP2008027722A (ja) * 2006-07-21 2008-02-07 Sony Corp 表示装置および表示装置の製造方法
US8158990B2 (en) * 2006-10-05 2012-04-17 Mitsubishi Chemical Corporation Light emitting device using GaN LED chip
US7889421B2 (en) * 2006-11-17 2011-02-15 Rensselaer Polytechnic Institute High-power white LEDs and manufacturing method thereof
TWI338383B (en) * 2006-12-18 2011-03-01 Delta Electronics Inc Electroluminescence device and manufacturing method thereof
TWI398015B (zh) * 2006-12-26 2013-06-01 發光二極體之製造方法
CN100438110C (zh) * 2006-12-29 2008-11-26 北京太时芯光科技有限公司 一种具有电流输运增透窗口层结构的发光二极管
US9196799B2 (en) * 2007-01-22 2015-11-24 Cree, Inc. LED chips having fluorescent substrates with microholes and methods for fabricating
JP2008192782A (ja) * 2007-02-05 2008-08-21 Toyota Central R&D Labs Inc 電極及びそれを有するｉｉｉ族窒化物系化合物半導体発光素子
JP4521013B2 (ja) * 2007-05-15 2010-08-11 株式会社日立製作所 照明装置および該照明装置を用いた液晶表示装置
US8368100B2 (en) * 2007-11-14 2013-02-05 Cree, Inc. Semiconductor light emitting diodes having reflective structures and methods of fabricating same
US8552444B2 (en) * 2007-11-19 2013-10-08 Panasonic Corporation Semiconductor light-emitting device and manufacturing method of the same
US7906786B2 (en) * 2008-01-11 2011-03-15 Industrial Technology Research Institute Light emitting device
GB0801509D0 (en) * 2008-01-28 2008-03-05 Photonstar Led Ltd Light emitting system with optically transparent thermally conductive element
TWI416755B (zh) * 2008-05-30 2013-11-21 Epistar Corp 光源模組、其對應之光棒及其對應之液晶顯示裝置
CN101604715A (zh) * 2008-06-10 2009-12-16 普光科技（广州）有限公司 氮化镓基发光二极管芯片及其制作方法
TW201007898A (en) * 2008-08-06 2010-02-16 Harvatek Corp Wafer level LED package structure for increasing conductive area and heat-dissipating area
TWI419360B (zh) * 2008-08-11 2013-12-11 Formosa Epitaxy Inc Solid crystal light-emitting device having an insulating layer and a method for manufacturing the same
KR20100030472A (ko) * 2008-09-10 2010-03-18 삼성전자주식회사 발광 소자 및 발광 장치의 제조 방법, 상기 방법을 이용하여 제조한 발광 소자 및 발광 장치
US7982409B2 (en) * 2009-02-26 2011-07-19 Bridgelux, Inc. Light sources utilizing segmented LEDs to compensate for manufacturing variations in the light output of individual segmented LEDs
TWI422075B (zh) * 2009-03-13 2014-01-01 Advanced Optoelectronic Tech 覆晶式半導體光電元件之結構及其製造方法
JP2011077496A (ja) * 2009-04-28 2011-04-14 Shin Etsu Handotai Co Ltd 発光素子および発光素子の製造方法
US8211722B2 (en) * 2009-07-20 2012-07-03 Lu Lien-Shine Flip-chip GaN LED fabrication method
JP5392611B2 (ja) * 2009-09-14 2014-01-22 スタンレー電気株式会社 半導体発光装置および半導体発光装置の製造方法
TWI403003B (zh) * 2009-10-02 2013-07-21 Chi Mei Lighting Tech Corp 發光二極體及其製造方法
US8593825B2 (en) * 2009-10-14 2013-11-26 Wintec Industries, Inc. Apparatus and method for vertically-structured passive components
CN102074636B (zh) * 2009-11-19 2013-04-10 亿光电子工业股份有限公司 一种倒装芯片结构的发光二极管装置
WO2011071100A1 (ja) * 2009-12-11 2011-06-16 昭和電工株式会社 半導体発光素子、半導体発光素子を用いた発光装置および電子機器
KR101258586B1 (ko) * 2009-12-21 2013-05-02 엘지디스플레이 주식회사 발광다이오드 패키지 및 이의 제조방법
RU2525325C2 (ru) * 2010-02-09 2014-08-10 Нития Корпорейшн Светоизлучающее устройство и способ изготовления светоизлучающего устройства
JP5494005B2 (ja) * 2010-02-26 2014-05-14 豊田合成株式会社 半導体発光素子
JP5381822B2 (ja) * 2010-03-10 2014-01-08 豊田合成株式会社 半導体発光素子及びその製造方法
KR101047739B1 (ko) * 2010-04-28 2011-07-07 엘지이노텍 주식회사 발광소자, 발광소자의 제조방법, 발광소자 패키지 및 조명시스템
JP5414627B2 (ja) * 2010-06-07 2014-02-12 株式会社東芝 半導体発光装置及びその製造方法
CN102339922B (zh) * 2010-07-28 2015-01-07 展晶科技(深圳)有限公司 发光二极管及其制造方法
JPWO2012026068A1 (ja) * 2010-08-24 2013-10-28 パナソニック株式会社 発光素子
US8664684B2 (en) * 2010-08-31 2014-03-04 Micron Technology, Inc. Solid state lighting devices with improved contacts and associated methods of manufacturing
CN102437254A (zh) * 2010-09-29 2012-05-02 展晶科技(深圳)有限公司 切割分离发光二极管晶片形成发光二极管芯片的方法
US9478719B2 (en) * 2010-11-08 2016-10-25 Bridgelux, Inc. LED-based light source utilizing asymmetric conductors
WO2012081568A1 (ja) * 2010-12-16 2012-06-21 シャープ株式会社 蛍光体基板、表示装置および照明装置
US9136432B2 (en) * 2010-12-28 2015-09-15 Seoul Viosys Co., Ltd. High efficiency light emitting diode
KR20120091839A (ko) * 2011-02-10 2012-08-20 삼성전자주식회사 플립칩 발광소자 패키지 및 그 제조 방법
TW201238043A (en) * 2011-03-11 2012-09-16 Chi Mei Lighting Tech Corp Light-emitting diode device and method for manufacturing the same
KR20120106568A (ko) * 2011-03-18 2012-09-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 장치 및 발광 장치의 제작 방법
CN202049992U (zh) * 2011-04-06 2011-11-23 南通同方半导体有限公司 一种GaN基发光二极管结构
KR20120116257A (ko) * 2011-04-12 2012-10-22 한국광기술원 발광 다이오드의 휘도 향상 방법 및 그에 의한 발광 다이오드
CN103534822A (zh) * 2011-04-20 2014-01-22 株式会社Elm 发光装置及其制造方法
US9269878B2 (en) * 2011-05-27 2016-02-23 Lg Innotek Co., Ltd. Light emitting device and light emitting apparatus
US8574938B2 (en) * 2011-07-19 2013-11-05 Ncku Research And Development Foundation Using isolated epitaxial structures in glue bonding for multiple group-III nitride LEDS on a single substrate
JP5949294B2 (ja) * 2011-08-31 2016-07-06 日亜化学工業株式会社 半導体発光素子
TWI606618B (zh) * 2012-01-03 2017-11-21 Ｌｇ伊諾特股份有限公司 發光裝置
JP5639626B2 (ja) * 2012-01-13 2014-12-10 シャープ株式会社 半導体発光素子及び電極成膜方法
TW201336123A (zh) * 2012-02-17 2013-09-01 Walsin Lihwa Corp 高壓發光二極體晶片及其製造方法
TW201338200A (zh) * 2012-03-02 2013-09-16 Phostek Inc 發光二極體裝置
TWI473298B (zh) * 2012-04-20 2015-02-11 Genesis Photonics Inc 半導體發光元件及覆晶式封裝元件
TWI472064B (zh) * 2012-06-06 2015-02-01 Achrolux Inc Ｌｅｄ封裝件及其製法
WO2014011419A1 (en) * 2012-07-10 2014-01-16 Toshiba Techno Center, Inc. Submount for led device package
CN102856459B (zh) * 2012-09-06 2015-09-16 安徽三安光电有限公司 发光二极管反射电极的钝化方法
CN102931314B (zh) * 2012-09-29 2015-02-11 安徽三安光电有限公司 一种防止金属迁移的半导体发光器件
CN102881797B (zh) * 2012-10-18 2015-02-25 安徽三安光电有限公司 具有电流扩展结构的氮化镓基发光二极管
JP2014112669A (ja) * 2012-11-12 2014-06-19 Citizen Holdings Co Ltd 半導体発光装置及びその製造方法
US9490398B2 (en) * 2012-12-10 2016-11-08 Citizen Holdings Co., Ltd. Manufacturing method of light emitting device in a flip-chip configuration with reduced package size
TWM453969U (zh) * 2012-12-26 2013-05-21 Genesis Photonics Inc 發光裝置
KR102091831B1 (ko) * 2013-01-08 2020-03-20 서울반도체 주식회사 발광 다이오드 및 그 제조방법
US9318674B2 (en) * 2013-02-05 2016-04-19 Cree, Inc. Submount-free light emitting diode (LED) components and methods of fabricating same
TWM460409U (zh) * 2013-02-22 2013-08-21 B S J Entpr Co Ltd 發光元件
KR102031967B1 (ko) * 2013-05-07 2019-10-14 엘지이노텍 주식회사 발광 소자 패키지
TW201444115A (zh) * 2013-05-10 2014-11-16 Chi Mei Lighting Tech Corp 發光裝置及其製造方法
CN104157769B (zh) * 2013-05-13 2017-04-05 新世纪光电股份有限公司 发光二极管封装结构
TWI527263B (zh) * 2013-07-17 2016-03-21 新世紀光電股份有限公司 發光二極體結構
TWI520383B (zh) * 2013-10-14 2016-02-01 新世紀光電股份有限公司 發光二極體封裝結構
US9419189B1 (en) * 2013-11-04 2016-08-16 Soraa, Inc. Small LED source with high brightness and high efficiency
TWI542047B (zh) * 2014-01-13 2016-07-11 邱羅利士公司 發光二極體封裝結構之製法
JP2015173142A (ja) * 2014-03-11 2015-10-01 株式会社東芝 半導体発光装置
JP5919484B2 (ja) * 2014-05-13 2016-05-18 パナソニックＩｐマネジメント株式会社 窒化物半導体発光ダイオード
CN203910851U (zh) * 2014-05-23 2014-10-29 晶科电子（广州）有限公司 一种白光led芯片
CN104253194A (zh) * 2014-09-18 2014-12-31 易美芯光（北京）科技有限公司 一种芯片尺寸白光led的封装结构及方法
US20160181476A1 (en) * 2014-12-17 2016-06-23 Apple Inc. Micro led with dielectric side mirror
US20160190406A1 (en) * 2014-12-24 2016-06-30 Epistar Corporation Light-emitting device and manufacturing method thereof

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW518771B (en) * 2001-09-13 2003-01-21 United Epitaxy Co Ltd LED and the manufacturing method thereof
TW200520249A (en) * 2003-12-02 2005-06-16 Hon Hai Prec Ind Co Ltd Light emitting diode and backlight module
TW201222864A (en) * 2010-11-16 2012-06-01 Epistar Corp Light-emitting diode chip and the manufacturing method thereof
TWM434309U (en) * 2012-03-30 2012-07-21 N Tec Corp LED wafer thinning structure

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