CN102931314B - 一种防止金属迁移的半导体发光器件 - Google Patents
一种防止金属迁移的半导体发光器件 Download PDFInfo
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- CN102931314B CN102931314B CN201210372376.6A CN201210372376A CN102931314B CN 102931314 B CN102931314 B CN 102931314B CN 201210372376 A CN201210372376 A CN 201210372376A CN 102931314 B CN102931314 B CN 102931314B
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- type semiconductor
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 74
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 52
- 239000002184 metal Substances 0.000 title claims abstract description 52
- 230000005012 migration Effects 0.000 title abstract description 9
- 238000013508 migration Methods 0.000 title abstract description 9
- 238000005253 cladding Methods 0.000 claims description 16
- 238000000034 method Methods 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 8
- 229910052804 chromium Inorganic materials 0.000 claims description 6
- 229910052737 gold Inorganic materials 0.000 claims description 6
- 229910052759 nickel Inorganic materials 0.000 claims description 6
- 229910052697 platinum Inorganic materials 0.000 claims description 6
- 229910052718 tin Inorganic materials 0.000 claims description 6
- 229910052719 titanium Inorganic materials 0.000 claims description 6
- 229910052721 tungsten Inorganic materials 0.000 claims description 6
- 239000011810 insulating material Substances 0.000 claims description 4
- 238000005468 ion implantation Methods 0.000 claims description 3
- 230000000694 effects Effects 0.000 abstract description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 32
- 229910052709 silver Inorganic materials 0.000 description 14
- 239000004332 silver Substances 0.000 description 14
- 239000000758 substrate Substances 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 5
- 230000004888 barrier function Effects 0.000 description 2
- 238000000280 densification Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 230000004927 fusion Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910007637 SnAg Inorganic materials 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 238000007499 fusion processing Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 229910001258 titanium gold Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/382—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending partially in or entirely through the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/405—Reflective materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0016—Processes relating to electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0025—Processes relating to coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0058—Processes relating to semiconductor body packages relating to optical field-shaping elements
Abstract
Description
Claims (9)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201210372376.6A CN102931314B (zh) | 2012-09-29 | 2012-09-29 | 一种防止金属迁移的半导体发光器件 |
PCT/CN2013/084302 WO2014048343A1 (zh) | 2012-09-29 | 2013-09-26 | 一种防止金属迁移的半导体发光器件 |
US14/639,996 US9293673B2 (en) | 2012-09-29 | 2015-03-05 | Semiconductor light-emitting device preventing metal migration |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201210372376.6A CN102931314B (zh) | 2012-09-29 | 2012-09-29 | 一种防止金属迁移的半导体发光器件 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102931314A CN102931314A (zh) | 2013-02-13 |
CN102931314B true CN102931314B (zh) | 2015-02-11 |
Family
ID=47646069
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201210372376.6A Active CN102931314B (zh) | 2012-09-29 | 2012-09-29 | 一种防止金属迁移的半导体发光器件 |
Country Status (3)
Country | Link |
---|---|
US (1) | US9293673B2 (zh) |
CN (1) | CN102931314B (zh) |
WO (1) | WO2014048343A1 (zh) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102931314B (zh) * | 2012-09-29 | 2015-02-11 | 安徽三安光电有限公司 | 一种防止金属迁移的半导体发光器件 |
CN104300056B (zh) * | 2014-10-11 | 2017-07-07 | 广东晶科电子股份有限公司 | 一种高可靠性的倒装led芯片、led器件和led芯片的制作方法 |
TWI583019B (zh) * | 2015-02-17 | 2017-05-11 | 新世紀光電股份有限公司 | Light emitting diode and manufacturing method thereof |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW200816519A (en) * | 2006-06-19 | 2008-04-01 | Sanken Electric Co Ltd | Semiconductor light emitting device and its manufacturing method |
CN102386293A (zh) * | 2010-09-01 | 2012-03-21 | 日立电线株式会社 | 发光二极管 |
CN102646765A (zh) * | 2012-05-03 | 2012-08-22 | 杭州士兰明芯科技有限公司 | 一种led芯片及其相应的制作方法 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7538357B2 (en) * | 2004-08-20 | 2009-05-26 | Panasonic Corporation | Semiconductor light emitting device |
US20080042145A1 (en) * | 2006-08-18 | 2008-02-21 | Helmut Hagleitner | Diffusion barrier for light emitting diodes |
JP2008192782A (ja) * | 2007-02-05 | 2008-08-21 | Toyota Central R&D Labs Inc | 電極及びそれを有するiii族窒化物系化合物半導体発光素子 |
US8188506B2 (en) * | 2008-09-30 | 2012-05-29 | Lg Innotek Co., Ltd. | Semiconductor light emitting device |
KR100992776B1 (ko) * | 2008-11-14 | 2010-11-05 | 엘지이노텍 주식회사 | 반도체 발광소자 및 그 제조방법 |
CN102637790A (zh) * | 2012-05-03 | 2012-08-15 | 杭州士兰明芯科技有限公司 | 一种led芯片及其相应的制作方法 |
CN102931314B (zh) * | 2012-09-29 | 2015-02-11 | 安徽三安光电有限公司 | 一种防止金属迁移的半导体发光器件 |
-
2012
- 2012-09-29 CN CN201210372376.6A patent/CN102931314B/zh active Active
-
2013
- 2013-09-26 WO PCT/CN2013/084302 patent/WO2014048343A1/zh active Application Filing
-
2015
- 2015-03-05 US US14/639,996 patent/US9293673B2/en active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW200816519A (en) * | 2006-06-19 | 2008-04-01 | Sanken Electric Co Ltd | Semiconductor light emitting device and its manufacturing method |
CN102386293A (zh) * | 2010-09-01 | 2012-03-21 | 日立电线株式会社 | 发光二极管 |
CN102646765A (zh) * | 2012-05-03 | 2012-08-22 | 杭州士兰明芯科技有限公司 | 一种led芯片及其相应的制作方法 |
Non-Patent Citations (1)
Title |
---|
JP特开2008-192782A 2008.08.21 * |
Also Published As
Publication number | Publication date |
---|---|
WO2014048343A1 (zh) | 2014-04-03 |
CN102931314A (zh) | 2013-02-13 |
US9293673B2 (en) | 2016-03-22 |
US20150179893A1 (en) | 2015-06-25 |
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C06 | Publication | ||
PB01 | Publication | ||
ASS | Succession or assignment of patent right |
Owner name: ANHUI SAN AN OPTOELECTRONICS CO., LTD. Free format text: FORMER OWNER: XIAMEN SAN AN PHOTOELECTRIC TECHNOLOGY CO., LTD. Effective date: 20130206 |
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C41 | Transfer of patent application or patent right or utility model | ||
COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: 361009 XIAMEN, FUJIAN PROVINCE TO: 241000 WUHU, ANHUI PROVINCE |
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TA01 | Transfer of patent application right |
Effective date of registration: 20130206 Address after: 241000 Anhui city of Wuhu Province Economic and Technological Development Zone Dong Liang Road No. 8 Applicant after: Anhui San'an Optoelectronics Co., Ltd. Address before: Siming District of Xiamen City, Fujian province 361009 Luling Road No. 1721-1725 Applicant before: Xiamen San'an Photoelectric Technology Co., Ltd. |
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C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
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